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Qorvo Us Inc patents


Recent patent applications related to Qorvo Us Inc. Qorvo Us Inc is listed as an Agent/Assignee. Note: Qorvo Us Inc may have other listings under different names/spellings. We're not affiliated with Qorvo Us Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "Q" | Qorvo Us Inc-related inventors


Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die resides over a top surface of the multilayer redistribution structure. The multilayer redistribution structure includes at least one support... Qorvo Us Inc

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die includes a first device layer formed from glass materials. The multilayer redistribution structure includes redistribution interconnects that connect the... Qorvo Us Inc

Wafer-level package with enhanced performance

The present disclosure relates to a packaging process to enhance thermal and electrical performance of a wafer-level package. The wafer-level package with enhanced performance includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution... Qorvo Us Inc

Multi-mode envelope tracking amplifier circuit

A multi-mode envelope tracking (ET) amplifier circuit is provided. The multi-mode ET amplifier circuit can operate in low-resource block (RB) mode and high-RB mode. The multi-mode ET amplifier circuit includes an ET amplifier(s) to amplify a radio frequency (RF) signal(s) to an amplified voltage, low-RB switcher circuitry to generate a... Qorvo Us Inc

Acoustic resonator device with controlled placement of functionalization material

A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over... Qorvo Us Inc

Acoustic filtering circuitry including capacitor

Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is... Qorvo Us Inc

Acoustic resonator devices and methods with noble metal layer for functionalization

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding) material. The interface layer and/or an overlying blocking layer are precisely patterned... Qorvo Us Inc

Advanced 3d inductor structures with confined magnetic field

Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. The conductive path has a shape corresponding to a two-dimensional (2D) lobe... Qorvo Us Inc

Thermally enhanced semiconductor package having field effect transistors with back-gate feature

The present disclosure relates to a thermally enhanced semiconductor package having field effect transistors (FETs) with a back-gate feature. The thermally enhanced semiconductor package includes a first buried oxide (BOX) layer, a first epitaxial layer over the first BOX layer, a second BOX layer over the first epitaxial layer, a... Qorvo Us Inc

Thermally enhanced semiconductor package having field effect transistors with back-gate feature

The present disclosure relates to a thermally enhanced semiconductor package having field effect transistors (FETs) with a back-gate feature. The thermally enhanced semiconductor package includes a non-silicon thermal conductive component, a silicon layer with a thickness between 100 Å and 10 μm over the thermal conductive component, a buried oxide... Qorvo Us Inc

Linearized distributed amplifier architecture

A distributed amplifier (DA) is disclosed. The DA includes a first plurality of inductive elements coupled in series forming a first plurality of connection nodes. The DA also includes a second plurality of inductive elements coupled in series forming a second plurality of connection nodes. The DA further includes a... Qorvo Us Inc

Semiconductor device with vertically integrated phemts

The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed semiconductor device includes a substrate, a lower pHEMT structure with a lower pHEMT, an isolation layer, and an upper pHEMT structure with an upper pHEMT. The lower pHEMT structure is formed... Qorvo Us Inc

Protection circuit for an rf power amplifier

An RF PA and an RF PA protection circuit are disclosed according to one embodiment of the present disclosure. The RF PA includes an RF PA bias circuit and an RF PA transistor element. The RF PA transistor element has a first current terminal and a control terminal. The RF... Qorvo Us Inc

Device having a titanium-alloyed surface

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material... Qorvo Us Inc

Multi-mode radio frequency circuitry

Circuitry includes a first RF power amplifier, a second RF power amplifier, a third RF power amplifier, a first bias signal generator, and a second bias signal generator. The first RF power amplifier and the second RF power amplifier are each configured to amplify RF signals for transmission in a... Qorvo Us Inc

Outphasing power management circuit for radio frequency (rf) beamforming

An outphasing power management circuit for radio frequency (RF) beamforming is disclosed. The outphasing power management circuit includes a first outphasing amplifier branch consisting of a plurality of first power amplifiers and a second outphasing amplifier branch consisting of a plurality of second power amplifiers. A controller operates the first... Qorvo Us Inc

High electron mobility transistor (hemt) device and making the same

A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer co-doped with silicon (Si) and germanium Ge and a method of making the same is disclosed. The HEMT device includes a substrate with epitaxial layers over the substrate. An n-type gallium nitride (GaN)... Qorvo Us Inc

Monolithic attenuator, limiter, and linearizer circuits using non-linear resistors

Monolithic attenuator, limiter, and linearizer circuitry to be integrated with other circuitry on a chip are provided. According to one aspect, a monolithic attenuator and limiter circuit comprises an input terminal, an output terminal, a first resistor having a first terminal coupled to the input terminal and a second terminal... Qorvo Us Inc

Thermally enhanced semiconductor package with thermal additive and process for making the same

The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip... Qorvo Us Inc

Substrate with integrated heat spreader

The present disclosure relates to a substrate with an integrated heat spreader. The disclosed substrate includes a substrate core, at least one connecting structure, and a heat spreader. The substrate core has a top surface and a bottom surface opposite the top surface of the substrate. The at least one... Qorvo Us Inc

Ring-frame power package

The present disclosure relates to a ring-frame power package that includes a thermal carrier, a spacer ring residing on the thermal carrier, and a ring structure residing on the spacer ring. The ring structure includes a ring body and a number of interconnect tabs that protrude from an outer periphery... Qorvo Us Inc

Variable gain low noise amplifier

LNA circuitry includes an input node, and output node, a primary amplifier stage, a first ancillary amplifier stage, and an input gain selection switch. The primary amplifier stage is configured to provide a first gain response between a primary amplifier stage input node and a primary amplifier stage output node,... Qorvo Us Inc

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a... Qorvo Us Inc

Adaptive capacitors with reduced variation in value and in-line methods for making same

A method of making a capacitor with reduced variance comprises providing a bottom plate in a first metal layer, a first dielectric material over the bottom plate, and a middle plate in a second metal layer to form a first capacitor. The method also comprises measuring the capacitance of the... Qorvo Us Inc

Envelope tracking power management circuit

An envelope tracking power management circuit is disclosed. An envelope tracking power management circuit includes a first envelope tracking amplifier(s) and a second envelope tracking amplifier(s), each configured to amplify a respective radio frequency (RF) signal(s) based on a respective supply voltage. A power management circuit can determine that a... Qorvo Us Inc

Circuit for suppressing signals adjacent to a passband

A circuit having a power amplifier port, an antenna port, and a ladder network coupled between the power amplifier and antenna ports is disclosed. The ladder network includes a proximal series acoustic resonator coupled to the power amplifier port, a distal series acoustic resonator coupled to the antenna port, and... Qorvo Us Inc

Microelectronics package with inductive element and magnetically enhanced mold compound component

The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a... Qorvo Us Inc

Microelectronics package with inductive element and magnetically enhanced mold compound component

The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a... Qorvo Us Inc

Compensation circuit to mitigate antenna-to-antenna coupling

A compensation circuit reduces the negative effects of antenna-to-antenna coupling between proximately located antennas. The compensation circuit is coupled between first and second antenna ports. A first transmit/receive path extends from radio frequency (RF) circuitry to the first antenna port. A second transmit/receive path extends from the RF circuitry to... Qorvo Us Inc

Substrate structure with embedded layer for post-processing silicon handle elimination

The present disclosure relates to a substrate structure with a buried dielectric layer for post-processing silicon handle elimination. The substrate structure includes a silicon handle layer, a first silicon oxide layer over the silicon handle layer, a buried dielectric layer over the first silicon oxide layer, where the buried dielectric... Qorvo Us Inc

Active photonic device having a darlington configuration with feedback

Disclosed is an active photonic device having a Darlington configuration with a substrate and a collector layer that is over the substrate. The collector layer includes an inner collector region. An outer collector region substantially surrounds the inner collector region and is spaced apart from the inner collector region. A... Qorvo Us Inc

Acoustic filter for antennas

Filter circuitry is used in communication systems that employ multiple antennas. In general, a communication system may have a transmit path and a receive path. The transmit path extends to a first antenna port and is configured to present signals for transmission in a first communication band and a second... Qorvo Us Inc

Radio frequency switching circuitry with improved switching speed

RF switching circuitry includes one or more RF switching elements, a control signal input node, a common resistor, and common resistor bypass circuitry. The one or more RF switching elements are coupled in series between a switch input node and a switch output node. A state of each one of... Qorvo Us Inc

High electron mobility transistor (hemt) device

A high electron mobility transistor (HEMT) device with epitaxial layers that include a gallium nitride (GaN) layer and an aluminum (Al) based layer having an interface with the GaN layer is disclosed. The Al based layer includes Al and an alloying element that is selected from Group IIIB transition metals... Qorvo Us Inc

Fluidic sensor device having uv-blocking cover

A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the... Qorvo Us Inc

10/05/17 / #20170286340

Slave device identification on a single wire communications bus

A system includes a single wire communications bus, a first slave device, and a second slave device. The first slave device and the second slave device each include a plurality of pins. The first slave device and the second slave device are uniquely identified on the single wire communications bus... Qorvo Us Inc

10/05/17 / #20170287807

Electronics package with improved thermal performance

An electronics package includes a thermal lid over a flip chip component such that the thermal lid is in contact with a surface of a flip chip component and one or more thermal vias in a substrate on which the flip chip component is mounted. The thermal lid dissipates heat... Qorvo Us Inc

10/05/17 / #20170288612

Efficient wide bandwidth envelope tracking power supply

An envelope tracking power supply, which includes a parallel amplifier, switching circuitry, and a parallel switching supply, is disclosed. The envelope tracking power supply provides an envelope power supply signal to a load. The parallel amplifier regulates an envelope power supply voltage of the envelope power supply signal based on... Qorvo Us Inc

10/05/17 / #20170288629

Solidly mounted layer thin film device with grounding layer

An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the... Qorvo Us Inc

10/05/17 / #20170288644

Baw devices having top electrode leads with reduced reflectance

The present disclosure relates to a Wafer-level-packaged Bulk Acoustic Wave (BAW) device, which includes a bottom electrode, a top electrode, a top electrode lead, a piezoelectric layer sandwiched between the bottom and the top electrodes, an enclosure, and an anti-reflective layer (ARL). Herein, an active region for a resonator is... Qorvo Us Inc

10/05/17 / #20170288659

Apparatus with main transistor-based switch and on-state linearization network

An apparatus including a main transistor-based switch having a first end node and a second end node and an ON-state linearization network that is coupled between the first end node and the second end node of the main transistor-based switch is disclosed. The ON-state linearization network is configured to receive... Qorvo Us Inc

10/05/17 / #20170288765

Multiple-input multiple-output (mimo) antenna swapping circuit

Aspects disclosed herein include a multiple-input multiple-output (MIMO) antenna swapping circuit. The MIMO antenna swapping circuit includes primary switching circuitry configured to be coupled to a first antenna and a third antenna, and secondary switching circuitry configured to be coupled to a second antenna and a fourth antenna. The primary... Qorvo Us Inc

09/28/17 / #20170276670

Mass detection through redox coupling

Redox of an analyte is coupled with redox of a precipitation precursor to generate a precipitating molecule that precipitates on the surface of a thin film bulk acoustic resonance (TFBAR) to allow mass detection of the precipitation molecule as a surrogate for the analyte. This disclosure describes, among other things,... Qorvo Us Inc

09/28/17 / #20170277651

Addressing of slave devices on a single wire communications bus through register map address selection

A communications system includes a single wire communications bus and a plurality of slave devices, each of the slave devices associated with a common slave identifier. The single wire communications bus is configured to receive a message comprising data, a slave identifier, and a register map address. A respective one... Qorvo Us Inc

09/28/17 / #20170278623

Coupled inductor structures

A coupled inductor structure includes a first three-dimensional inductor structure and a second three-dimensional folded inductor structure. At least a portion of the first three-dimensional folded inductor structure is located within a volume bounded by the second three-dimensional folded inductor structure. By nesting the first three-dimensional folded inductor structure within... Qorvo Us Inc

09/28/17 / #20170278767

Hermetic package with improved rf stability and performance

The present disclosure relates to a hermetic package with improved RF stability and performance. The package includes a carrier, a bottom dielectric ring over the carrier, a bottom metal layer over the bottom dielectric ring, a top dielectric ring over the bottom metal layer, a top metal layer over the... Qorvo Us Inc

09/28/17 / #20170278840

Electrostatic discharge (esd) protection in an electronic switching circuit

Aspects disclosed herein include electrostatic discharge (ESD) protection in an electronic switching circuit. An electronic switching circuit includes switching circuitry configured to provide interconnectivity between a common port in at least one common branch and an input/output (I/O) port in at least one I/O branch. The common branch and the... Qorvo Us Inc

09/28/17 / #20170278958

Double heterojunction field effect transistor with polarization compensated layer

A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. The channel layer is over the relaxation layer. The polarization compensation layer... Qorvo Us Inc

09/28/17 / #20170279416

Dual output rf lna

RF receive circuitry, which includes a first output impedance matching circuit coupled to a first alpha output of a first alpha LNA, a second output impedance matching circuit coupled to a first beta output of a first beta LNA, and a first dual output RF LNA, is disclosed. The first... Qorvo Us Inc

09/28/17 / #20170279439

Rf phase offset detection circuit

An RF phase offset detection system, which includes a first RF phase detector and a second RF phase detector, and measures a first phase offset between a first RF signal and a second RF signal, is disclosed. Each of the first RF signal and the second RF signal has a... Qorvo Us Inc

09/21/17 / #20170271200

Silicon-on-plastic semiconductor device with interfacial adhesion layer

A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a polymer substrate and an interfacial layer over the polymer substrate. A buried oxide layer resides over the interfacial layer, and a device layer with at least a portion of a radio frequency power switch... Qorvo Us Inc

09/21/17 / #20170272066

Radio frequency (rf) switch with on and off switching acceleration

A Radio Frequency (RF) switch having two or more stages coupled in series is disclosed. A first Field-Effect Transistor (FET) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first FET is on. An RF switching device is configured to pass... Qorvo Us Inc

09/14/17 / #20170261503

Baw sensor fluidic device with increased dynamic measurement range

A fluidic device includes a base structure including at least one bulk acoustic wave (BAW) resonator structure having a fluidic passage containing at least one functionalized active region overlaid with functionalization material suitable to bind an analyte. One or more of a wall structure, a cover structure, or a portion... Qorvo Us Inc

09/14/17 / #20170262008

Bias circuitry

Circuitry having a reference current generator and a reference current governor is disclosed. The reference current governor includes field effect transistors (FETs) that are sized such that a governor current governs a reference current flowing through the first FET to maintain the reference current within a desired reference current range.... Qorvo Us Inc

09/14/17 / #20170263844

Bulk acoustic wave resonator with a border ring and an inner ring

Bulk Acoustic Wave (BAW) resonators with a Border (BO) ring and an inner ring are provided. One BAW resonator includes a bottom electrode, a piezoelectric layer over the bottom electrode, and a top electrode over the piezoelectric layer in which an active region is formed where the top electrode and... Qorvo Us Inc

09/14/17 / #20170264249

Low noise amplifier (lna) system

A low noise amplifier (LNA) system having a constant noise factor (Const-NF) mode and a constant third-order intercept (Const-IP3) mode is disclosed. The LNA system includes an LNA core and a trade-off bias network coupled to the LNA core to selectably bias the LNA core to realize the Const-NF mode... Qorvo Us Inc

09/14/17 / #20170264267

Bulk acoustic wave resonator with electrically isolated border ring

A Bulk Acoustic Wave (BAW) resonator with an electrically isolated Border (BO) ring is provided. One BAW resonator includes a bottom electrode and a piezoelectric layer over the bottom electrode and having a top surface with a first portion and second portion about the first portion. The BAW resonator also... Qorvo Us Inc

09/07/17 / #20170255250

Switching power supply for subus slaves

This disclosure relates generally to digital bus interfaces. In one embodiment, a bus interface system includes a master bus controller and a slave bus controller coupled along a bus line. The master bus controller is configured to generate an input data signal that is received by the slave bus controller... Qorvo Us Inc

09/07/17 / #20170255578

One wire bus to rffe translation system

This disclosure relates generally to bus interface systems for mobile user devices. In one embodiment, the bus interface system includes a first bus interface subsystem that operates in accordance with a one wire bus protocol, a second bus interface subsystem that operates in accordance with a Mobile Industry Processor Interface... Qorvo Us Inc

09/07/17 / #20170255579

One wire bus to rffe translation system

This disclosure relates generally to bus interface systems for mobile user devices. In one embodiment, the bus interface system includes a first bus interface subsystem that operates in accordance with a one wire bus protocol, a second bus interface subsystem that operates in accordance with a Mobile Industry Processor Interface... Qorvo Us Inc

09/07/17 / #20170256467

Removable sacrificial connections for semiconductor devices

Methods of fabricating semiconductor devices and Radio Frequency (RF) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. The method also includes testing the circuit layout using the one or... Qorvo Us Inc

09/07/17 / #20170257078

Baw/saw-assisted lc filters and multiplexers

Embodiments of radio frequency (RF) filtering circuitry are disclosed. In one embodiment, the RF filtering circuitry includes a common port, a second port, a third port, a first RF filter path, and a second RF filter path. The first RF filter path is connected between the common port and the... Qorvo Us Inc

08/31/17 / #20170250653

Dual-mode envelope tracking power management circuit

A dual-mode envelope tracking (ET) power management circuit is provided. An ET amplifier(s) in the dual-mode ET power management circuit is capable of supporting normal-power user equipment (NPUE) mode and high-power user equipment (HPUE) mode. In the NPUE mode, the ET amplifier(s) amplifies a radio frequency (RF) signal(s) to an... Qorvo Us Inc

08/31/17 / #20170251474

Radio frequency front end circuitry for mimo and carrier aggregation

RF front end circuitry includes a first antenna node, a second antenna node, a diplexer, a first band filter, a second band filter, and switching circuitry. The diplexer may be used to separate signals for carrier aggregation, providing signals within a first RF frequency band to the first band filter... Qorvo Us Inc

08/24/17 / #20170244380

Bulk acoustic wave device with wafer level packaging

A bulk acoustic wave (BAW) device includes a substrate, a reflector on the substrate, a piezoelectric layer on the reflector and including a first opening through which a portion of the reflector is exposed, an electrode layer on the portion of the reflector exposed through the first opening, a passivation... Qorvo Us Inc

Patent Packs
08/24/17 / #20170244382

High power and low loss acoustic filter

The present disclosure relates to a high power and low loss acoustic filter that includes a first node, a second node, a first power bypass path, and a first acoustic resonator (AR) path. The first power bypass path extends between the first node and the second node. The first AR... Qorvo Us Inc

08/24/17 / #20170244401

Stacked rf switch with fast switching speed

A first stacked RF switch, which operates in one of an ON mode and an OFF mode, and includes a group of RF switching circuits coupled in series between a first RF switch connection node and a second RF switch connection node, is disclosed. The group of RF switching circuits... Qorvo Us Inc

08/24/17 / #20170244402

Overvoltage detector for an rf switch

An overvoltage detector for an RF switch is disclosed. The overvoltage detector is made up of circuitry having a detector output that couples to a controller, a body voltage input that couples to a charge pump, and a body voltage output that couples to a body terminal of the RF... Qorvo Us Inc

08/17/17 / #20170236808

Semiconductor package with lid having lid conductive structure

The present disclosure relates to a semiconductor package with a lid that includes a lid conductive structure. The semiconductor package includes a substrate with a top surface, a lid over the top surface of the substrate, and at least one substrate-mounted component mounted on the top surface of the substrate.... Qorvo Us Inc

08/17/17 / #20170236925

Semiconductor device with multiple hbts having different emitter ballast resistances

The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (HBTs) that have different emitter ballast resistances. The disclosed semiconductor device includes a substrate, a first HBT and a second HBT formed over the substrate. The first HBT includes a first collector, a first base over the... Qorvo Us Inc

08/17/17 / #20170237404

Weakly coupled tunable rf receiver architecture

RF communications circuitry, which includes a first tunable RF filter and a first RF low noise amplifier (LNA) is disclosed. The first tunable RF filter includes a pair of weakly coupled resonators, and receives and filters a first upstream RF signal to provide a first filtered RF signal. The first... Qorvo Us Inc

08/17/17 / #20170237451

Radio frequency front end circuitry with reduced insertion loss

Circuitry includes a primary antenna node, a secondary antenna node, a first set of input/output nodes, a second set of input/output nodes, a first diplexer, a second diplexer, and switching circuitry. The switching circuitry is arranged such that any one of the first set of input/output nodes and the second... Qorvo Us Inc

08/17/17 / #20170237452

Radio frequency filtering circuitry for carrier aggregation

Radio frequency (RF) filtering circuitry includes a number of filtering elements and switching circuitry configured to rearrange the filtering elements between a common node, a first input/output node, a second input/output node, and a third input/output node such that the RF filtering circuitry is capable of supporting carrier aggregation between... Qorvo Us Inc

08/10/17 / #20170227497

Baw sensing and filtration device and related methods

A fluidic device incorporating at least one BAW resonator structure (e.g., a biosensing device) and a fluidic passage includes one or more features that provide filtration capability. Certain embodiments include at least one group of pillars extending into the fluidic passage which are arranged between an active region of the... Qorvo Us Inc

08/10/17 / #20170229368

Top-side cooling of rf products in air cavity composite packages

Top-side cooling of Radio Frequency (RF) products in air cavity packages is provided. According to one aspect, an air cavity package comprises a substrate, a RF component mounted to the substrate, and a lid structure comprising a first material and being mounted to the substrate that covers the RF component... Qorvo Us Inc

08/10/17 / #20170230012

Radio frequency (rf) amplifiers with voltage limiting using non-linear feedback

Radio Frequency (RF) amplifiers with voltage limiting using non-linear feedback are presented herein. According to one aspect, an RF amplifier comprises an amplifier circuit having an input terminal and an output terminal and a non-linear feedback circuit having an input terminal and an output terminal. The input terminal of the... Qorvo Us Inc

08/10/17 / #20170230015

Auto-bias circuit for stacked fet power amplifier

The present disclosure relates to circuitry including an auto-bias circuit for a stacked FET power amplifier. The auto-bias circuit includes a dividing circuit and an averaging circuit. The dividing circuit is configured to receive a control signal with a control voltage and provide a first pre-gate signal having a first... Qorvo Us Inc

08/03/17 / #20170220503

Front end serial bus automatic bus park tri-state activation

The present disclosure relates to embodiments of bus interface systems capable of dealing with the tougher half clock cycle of SREAD commands in the new mobile industry processor interface (MIPI) radio frequency front end (RFFE) version 2.0 standard. With regard to the slave bus controllers of the bus interface systems... Qorvo Us Inc

08/03/17 / #20170222672

Ul ca tx-tx tunable cross-isolation method

RF filtering circuitry includes a first transmit signal node, a second transmit signal node, a common node, first transmit signal filtering circuitry, second transmit signal filtering circuitry, and transmit signal cancellation circuitry. The first transmit signal filtering circuitry is coupled between the first transmit signal node and the common node... Qorvo Us Inc

07/20/17 / #20170207350

Microelectronics package with integrated sensors

The present disclosure relates to a microelectronics package with optical sensors and/or thermal sensors. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, and a first mold... Qorvo Us Inc

Patent Packs
07/20/17 / #20170207705

Smooth transitioning buck-boost dc-dc converter

A buck-boost DC-DC converter, which includes converter control circuitry, converter switching circuitry, and a first inductive element, is disclosed. The converter control circuitry provides a buck mode timing signal and a boost mode timing signal. The converter switching circuitry provides a switching output signal. During a buck mode of the... Qorvo Us Inc

07/20/17 / #20170207766

Cap structure for wafer level package

A wafer level package (WLP) device includes a wafer level core and a cap structure. At least one component is formed in or on the wafer level core, and the cap structure resides on the top surface of the wafer level core and forms a cavity over the component. The... Qorvo Us Inc

07/20/17 / #20170207813

Single rf pa chain for ca fdd-tdd and tdd tx

RF circuitry, which includes RF RX circuitry, an RF PA, RF TDD switching circuitry, and RF TX switching circuitry, is disclosed. The RF TX switching circuitry is coupled between the RF PA and the RF TDD switching circuitry. The RF PA receives and amplifies an RF input signal to provide... Qorvo Us Inc

07/13/17 / #20170201233

Compensation circuit for use with acoustic resonators to provide a bandstop

Filter circuitry uses acoustic resonators to provide a frequency response having a stopband between two passbands. The filter circuitry includes at least one series acoustic resonator coupled between an input node and an output node. A compensation circuit is also coupled between the input node and the output node. The... Qorvo Us Inc

07/13/17 / #20170201244

Rf branch with improved power handling

Improved Radio Frequency (RF) switches are provided herein. According to one aspect, an RF switch comprises one or more stages. In one embodiment, each stage comprises a signal input terminal, a signal output terminal, a control input terminal, and a switching device having a source connected to the signal input... Qorvo Us Inc

07/13/17 / #20170201245

Rf branch with accelerated turn-on and high q value

Improved Radio Frequency (RF) switches are provided herein. According to one aspect, an RF switch comprises one or more stages. In one embodiment, each stage comprises a signal input terminal, a signal output terminal, a control input terminal, and a switching device having a first terminal connected to the signal... Qorvo Us Inc

07/13/17 / #20170201248

Rf switch having reduced signal distortion

An RF switch having an M number of FETs that are stacked in series and coupled between a first end node and a second end node wherein each of the M number of FETs has a gate is disclosed. A resistive network is coupled between a common mode (CM) node... Qorvo Us Inc

07/13/17 / #20170201290

Radio frequency circuitry for carrier aggregation

RF circuitry includes a filter, a termination impedance, and band switching circuitry. The filter is coupled between a first input/output node and a common node and configured to pass RF signals within a transmit portion of a first operating band from the first input/output node to the common node while... Qorvo Us Inc

06/22/17 / #20170179598

Spatial coupler and antenna for splitting and combining electromagnetic signals

A spatium amplifier includes a plurality of amplifiers connected between a pair of spatial couplers, each having a core member and a shell member forming an antenna. The core member includes a cylindrical core portion and a plurality of tapering core fins extending radially outwardly from the cylindrical core portion.... Qorvo Us Inc

06/22/17 / #20170179888

Low distortion multiple power amplifier power supply

A PA power supply, which includes a first ET power supply, power supply control circuitry, a first PMOS switching element, and a second PMOS switching element, is disclosed. During a first operating mode, the power supply control circuitry selects an OFF state of the first PMOS switching element, selects an... Qorvo Us Inc

06/22/17 / #20170179927

Bulk acoustic wave (baw) filter with coupled inductors

A Bulk Acoustic Wave (BAW) filter includes a series branch coupled between an input node and an output node. The series branch has multiple BAW resonators that are coupled in series, wherein a first series resonator is coupled between a first node and a second node in the series branch.... Qorvo Us Inc

06/15/17 / #20170168017

Baw sensor device with peel-resistant wall structure

Lateral boundaries of a fluidic passage of a fluidic device incorporating at least one BAW resonator structure are fabricated with photosensitive materials (e.g., photo definable epoxy, solder mask resist, or other photoresist), allowing for high aspect ratio, precisely dimensioned walls. Resistance to delamination and peeling between a wall structure and... Qorvo Us Inc

06/15/17 / #20170168018

Temperature compensation and operational configuration for bulk acoustic wave resonator devices

Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and... Qorvo Us Inc

06/15/17 / #20170168026

Temperature compensation and operational configuration for bulk acoustic wave resonator devices

Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and... Qorvo Us Inc

06/15/17 / #20170170801

Bulk acoustic wave resonator with a modified outside stack portion

Bulk Acoustic Wave (BAW) resonators that include a modified outside stack portion and methods for fabricating such BAW resonators are provided. One BAW resonator includes a reflector, a bottom electrode, a piezoelectric layer, and a top electrode. An active region is formed where the top electrode overlaps the bottom electrode... Qorvo Us Inc

06/15/17 / #20170171813

Multi-band envelope tracking circuit

A multi-band envelope tracking circuit is disclosed. The multi-band envelope tracking circuit includes a first radio frequency (RF) transceiver and a second RF transceiver, each configured to communicate one or more RF signals in one or more RF bands, and an envelope tracking signal corresponding to the one or more... Qorvo Us Inc

06/08/17 / #20170160274
06/01/17 / #20170153253

Two part assembly

... Qorvo Us Inc

05/25/17 / #20170149408

Acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response

The present disclosure provides an acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response. More specifically, the present disclosure provides a solidly mounted BAW resonator device with an active region of piezoelectric material laterally surrounded by an inactive region with a reduced thickness of... Qorvo Us Inc

05/18/17 / #20170138935

Baw sensor with passive mixing structures

A fluidic device includes a base structure, a wall structure, and a cover structure bounding a fluidic passage containing a functionalized active region of at least one bulk acoustic wave (BAW) resonator structure. One or more of the wall structure, the cover structure, or a portion of the base structure... Qorvo Us Inc

05/11/17 / #20170133239

Semiconductor device with high thermal conductivity substrate and process for making the same

The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a... Qorvo Us Inc

05/11/17 / #20170133295

Semiconductor device with high thermal conductivity substrate and process for making the same

The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure... Qorvo Us Inc

05/11/17 / #20170133326

Wafer level fan-out with electromagnetic shielding

The present disclosure relates to an integrated circuit module with electromagnetic shielding. The integrated circuit module includes a die with an input/output (I/O) port at a bottom surface of the die, a mold compound partially encapsulating the die and leaving the bottom surface of the die exposed, a first dielectric... Qorvo Us Inc

05/11/17 / #20170133368

High bandgap schottky contact layer device

A high bandgap Schottky contact layer device and methods for producing same are provided herein. According to one aspect, a high bandgap Schottky contact layer device comprises a substrate, a first Schottky layer over the substrate, the first Schottky layer having a first bandgap, and a second Schottky layer over... Qorvo Us Inc

05/11/17 / #20170134001

Acoustic resonator devices and fabrication methods providing hermeticity and surface functionalization

A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with a low water permeability hermeticity layer and an interface layer including a material (e.g., gold or a hydroxylated oxide surface) suitable for receiving a self-assembled monolayer (SAM) that may be functionalized with a functionalization (e.g., specific binding)... Qorvo Us Inc

05/11/17 / #20170134002

Baw sensor with enhanced surface area active region

A bulk acoustic wave MEMS resonator device includes at least one functionalization (e.g., specific binding or non-specific binding) material arranged over a top side electrode, with at least one patterned enhanced surface area element arranged between a lower surface of the top side electrode and the functionalization material. The at... Qorvo Us Inc

05/11/17 / #20170134058

Passive acoustic resonator based rf receiver

A radio frequency (RF) receiver, which has an RF filter and impedance matching circuit and an RF low noise amplifier (LNA), is disclosed. The RF filter and impedance matching circuit includes a first passive RF acoustic resonator; provides an RF bandpass filter having an RF receive band based on the... Qorvo Us Inc








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