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Renesas Electronics Corporation patents


Recent patent applications related to Renesas Electronics Corporation. Renesas Electronics Corporation is listed as an Agent/Assignee. Note: Renesas Electronics Corporation may have other listings under different names/spellings. We're not affiliated with Renesas Electronics Corporation, we're just tracking patents.

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Semiconductor integrated circuit having battery control function and operation method thereof

A semiconductor integrated circuit is capable of being supplied with battery current information and battery voltage information. The semiconductor integrated circuit includes a memory function, a current integrating function, a voltage-based state of charge operating function, a current-based state of charge operating function, a comparison determination function, a correcting function,... Renesas Electronics Corporation

Semiconductor device, controlling semiconductor device, and semiconductor system

The disclosed invention is to provide a semiconductor device enabling it to access an internal device within a USB cable in a simple way. Disclosed is a semiconductor device which is able to be coupled to at least one USB cable and which includes a decision unit that decides whether... Renesas Electronics Corporation

Semiconductor device manufacturing method and semiconductor device

The present invention is directed to improve reliability of a semiconductor device. A semiconductor device manufacturing method includes: (a) a step of attaching a BGA having a solder ball to a socket for a burn-in test; and (b) a step of performing a burn-in test of the BGA by sandwiching... Renesas Electronics Corporation

Semiconductor device

A semiconductor chip includes a first circuit and a second circuit having different reference potentials. A first potential which is a reference potential of the first circuit is applied to the semiconductor chip through any of plural lead terminals, and a second potential which is a reference potential of the... Renesas Electronics Corporation

Semiconductor device and manufacturing method thereof

A semiconductor device including an isolation insulating film having a first thickness that is located between a drain region and a source region; a gate electrode formed over a region located between the isolation insulating film and the source region and that includes a part serving as a channel; an... Renesas Electronics Corporation

Semiconductor device, semiconductor system, and control semiconductor device

An object of the present invention is to provide a semiconductor device, a semiconductor system, and a control method of a semiconductor device capable of accurately monitoring the lowest operating voltage of a circuit to be monitored. According to one embodiment, a monitor unit of a semiconductor system includes a... Renesas Electronics Corporation

Battery control ic and control method therefore

A battery control IC includes a voltage measurement unit that measures, in a normal current mode, a voltage value of each of a plurality of unit battery cells forming a battery pack, and measures, in a short-time large-current mode, a voltage value of a unit battery cell that has exhibited... Renesas Electronics Corporation

Semiconductor integrated circuit and system

To raise confidentiality of the value stored in the ROM, in an IC having a built-in or an externally-attached ROM storing a value (program and/or data) encrypted using a predetermined cryptographic key. The IC includes the ROM storing the encrypted value (program and/or data), a unique code generating unit, and... Renesas Electronics Corporation

Control device, magnetic disk control system, and control controlling disk storage device

The control device of the disk storage device includes a control unit that controls a motor and retracts the head from over a disk to a ramp mechanism when power supply is shut down, an acquisition unit that acquires information related to a moving distance of the head that retracts... Renesas Electronics Corporation

Semiconductor device

To improve a performance of a semiconductor device, a semiconductor device includes a lead electrically coupled to a semiconductor chip via a wire. An inner portion of the lead, the semiconductor chip, and the wire are sealed by a sealing body (a resin sealing body). The wire is bonded to... Renesas Electronics Corporation

Semiconductor device

To provide a semiconductor device having improved reliability by preventing, in a split-gate MONOS memory comprised of a fin type transistor, unbalanced injection distribution of electrons into a charge accumulation film due to the shape of the fin. A memory gate electrode configuring a memory cell is formed over a... Renesas Electronics Corporation

Semiconductor device

Improvements are achieved in the characteristics of a nonvolatile memory. In plan view, in a first isolation region which is an element isolation region surrounded by a first fin, a second fin, a memory gate electrode, and another memory gate electrode, a protruding portion is provided. In a second isolation... Renesas Electronics Corporation

Semiconductor device

A semiconductor device includes a channel layer formed over a substrate, a barrier layer formed on the channel layer and a gate electrode. A second gate electrode section is formed on the gate electrode via a gate insulating film. It becomes possible to make an apparent threshold voltage applied to... Renesas Electronics Corporation

Semiconductor device, motor control system, and control semiconductor device

A semiconductor device according to one embodiment selects one of the first and second resolver/digital converters and interrupts a supply of a power supply voltage to the other one of the first and second resolver/digital converters, and when an error is detected in the selected one of the first and... Renesas Electronics Corporation

Semiconductor integrated circuit, variable gain amplifier, and sensing system

A semiconductor integrated circuit includes a first pad provided on one end side of a first resistive element and one end side of a second resistive element externally provided, a second pad provided on a different end side of the first resistive element, a third pad provided on a different... Renesas Electronics Corporation

Semiconductor device

A semiconductor device according to an embodiment has a first semiconductor component and a second semiconductor component which are electrically connected with each other via an interposer. The interposer has a plurality of first signal wiring paths, and a plurality of second signal wiring paths each having a path distance... Renesas Electronics Corporation

Pulsation measuring apparatus, light intensity control method, and program

An LED 21 irradiates light to a subject. An optical detector 22 outputs an optical detection signal. A signal quality calculation portion 14 calculates signal quality of a pulsation signal generated based on the optical detection signal. A body motion level determination portion 15 determines whether the subject maintains a... Renesas Electronics Corporation

Power feeding system and negotiation controller

A power feeding system according to one embodiment includes a negotiation controller included in a power receiving device, a negotiation controller included in a power feeding device, and a determination unit that determines whether to allow power feeding from the power feeding device to the power receiving device. The negotiation... Renesas Electronics Corporation

Determination apparatus and determination method

A determination apparatus includes a difference code generation section that generates a first difference code and a second difference code, the first difference code representing a set of code pieces in a first program that are different from code pieces in a second program, the second difference code representing a... Renesas Electronics Corporation

Self-diagnosis device and self-diagnosis method

A semiconductor device includes a plurality of functional blocks, and a self-diagnosis circuit that controls a test for the functional blocks. When an interruption request is issued, the self-diagnosis circuit executes a test for one of the functional blocks.... Renesas Electronics Corporation

Semiconductor device

A ring oscillator for detecting a characteristic degradation of MOSFETs is required to be highly sensitive to NBTI degradation or PBTI degradation. A semiconductor device comprises a ring oscillator and a delay detecting circuit which detects a delay through gate circuits based on the oscillation frequency of the ring oscillator.... Renesas Electronics Corporation

Semiconductor device

A semiconductor device which reduces power consumption. In the semiconductor device, semiconductor chips are stacked over a base chip. The stacked chips include n through-silicon vias as a first group and m through-silicon vias as a second group. In each of the first and second groups, the through-silicon vias are... Renesas Electronics Corporation

Semiconductor device

A data signal may not be fetched by using a data strobe signal if the waveform of the data is degraded with an increase in speed. In order to solve this problem, a first selection unit generates a first selection signal that indicates which one of a plurality of lanes... Renesas Electronics Corporation

Semiconductor device and semiconductor integrated circuit

A semiconductor device that can rapidly stabilize a control voltage for controlling an electric current source is provided. A semiconductor device includes a filter circuit that is provided between a control voltage generation circuit and an electric current source and removes noise of the control voltage. The filter circuit includes... Renesas Electronics Corporation

Semiconductor device and diagnosis method thereof

There is to provide a semiconductor device capable of realizing a start time diagnosis on a non-volatile memory without any external device and any non-volatile memory out of a diagnosis target. The non-volatile memory includes an address space formed by addresses continuously read and a reservation address formed by a... Renesas Electronics Corporation

Manufacturing semiconductor device

A first coating film made of photosensitive material is formed so as to cover step parts and to become thicker in a central part of a semiconductor substrate in planar view and to become thinner in an outer peripheral part. Next, a first pattern part located on the central part... Renesas Electronics Corporation

Semiconductor device and manufacturing the same

When a void is caused in an interlayer insulating film on a semiconductor substrate, the invention prevents short circuit between two or more contact plugs that sandwich the void therebetween via a conductive film buried in the void at the time of formation of the contact plugs. An element isolation... Renesas Electronics Corporation

Manufacturing semiconductor device

A manufacturing method of a semiconductor device comprises a step of ion-implanting a P-type impurity at a first dose amount to form semiconductor regions that are low concentration semiconductor regions of a high breakdown voltage P-type transistor, and a step of ion-implanting a P-type impurity at a second dose amount... Renesas Electronics Corporation

Method of manufacturing semiconductor device and semiconductor device

An improvement is achieved in the performance of a semiconductor device. A second component mounting portion over which a first electronic component is mounted is connected to a coupling portion of a lead frame via a suspension lead. The suspension lead has a first portion between the second component mounting... Renesas Electronics Corporation

Method for manufacturing semiconductor device

Reliability of a semiconductor device is improved. A method for manufacturing the semiconductor device includes the steps of: providing a lead frame having a semiconductor chip mounted thereon; providing a heat radiating frame having a heat radiating plate; and resin sealing the semiconductor chip and the heat radiating plate with... Renesas Electronics Corporation

Semiconductor device, system in package, and system in package for vehicle

The object is to suppress rupture of the soldering balls when an atmosphere varying from a high temperature to a low temperature is repeated. A semiconductor device includes a semiconductor integrated circuit and a substrate. The semiconductor integrated circuit is, for example, a semiconductor chip. The coefficient of thermal expansion... Renesas Electronics Corporation

Semiconductor device

A BGA 9 includes a wiring substrate 2, a semiconductor chip 1 fixed on the wiring substrate 2, a sealing body 4 that seals the semiconductor chip 1, and a plurality of solder balls 5 provided on a lower surface of the wiring substrate 2. A degree of flatness of... Renesas Electronics Corporation

Semiconductor device and manufacturing the same

While strength of a wiring board in a semiconductor substrate is ensured, thermal conductivity is increased. A BGA includes a wiring board having an upper surface and a lower surface, a semiconductor chip mounted on the upper surface of the wiring board, and ball electrodes that are a plurality of... Renesas Electronics Corporation

Semiconductor device having low on resistance

A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface... Renesas Electronics Corporation

Semiconductor device

A semiconductor device includes an electrostatic protection element including a bipolar transistor whose base region and emitter region are electrically coupled together through a resistance region. At this time, the base region of the electrostatic protection element has a side including a facing portion that faces the collector region. The... Renesas Electronics Corporation

03/29/18 / #20180090501

Semiconductor device

A semiconductor device that can evacuate the information in a DRAM automatically at the time of power supply cutoff is provided. A memory cell includes a DRAM cell that holds information at a storage node, a nonvolatile memory cell, and a transistor. The nonvolatile memory cell holds information by use... Renesas Electronics Corporation

03/29/18 / #20180090508

Semiconductor device and manufacturing semiconductor device

A semiconductor device having a nonvolatile memory cell arranged in a p-type well (active region) PW1 in a memory cell region 1A in a semiconductor substrate 1 and an MISFET arranged in a p-type well PW2 (active region) or an n-type well (active region) in a peripheral circuit region 2A... Renesas Electronics Corporation

03/29/18 / #20180090597

Method for manufacturing a semiconductor device

The reliability of a semiconductor device is improved. A first gate electrode of a dummy gate electrode including silicon is formed over a semiconductor substrate. Then, by an ion implantation method, a semiconductor region for source or drain of MISFET is formed in the semiconductor substrate. Then, over the semiconductor... Renesas Electronics Corporation

03/29/18 / #20180090610

Semiconductor device and manufacturing the same

A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor. The first gate electrode is formed over a first gate insulating film in a lower part of a trench. The second gate electrode is... Renesas Electronics Corporation

03/29/18 / #20180090611

Semiconductor device and manufacturing method thereof

The present invention provides a method of manufacturing a semiconductor device to improve the manufacturing yield of the semiconductor device. The manufacturing method includes the steps of: forming a groove extending in a first direction (y direction) across a first power transistor formation region and a second power transistor formation... Renesas Electronics Corporation

03/29/18 / #20180090626

Semiconductor device and manufacturing the semiconductor device

Resistance of a gate electrode is reduced in a split gate MONOS memory configured by a fin FET. A memory gate electrode of a split gate MONOS memory is formed of a first polysilicon film, a metal film, and a second polysilicon film formed in order on a fin. A... Renesas Electronics Corporation

03/29/18 / #20180090636

Semiconductor device and manufacturing the same

A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate.... Renesas Electronics Corporation

03/29/18 / #20180091068

Input buffer, semiconductor device and engine control unit

Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first... Renesas Electronics Corporation

03/29/18 / #20180091107

Variable gain amplifier, correction method and receiving device

To provide a variable gain amplifier capable of correcting a DC offset voltage through simpler control even when a gain thereof is changed. A differential output type variable gain amplifier is equipped with a first voltage correction unit coupled to a preceding stage of a variable gain amplifier circuit and... Renesas Electronics Corporation

03/29/18 / #20180091130

Semiconductor device

Related-art back bias generation circuits cause a problem where a long time is required for transition between an operating state and a standby state because driving power is lowered to reduce the power consumption in the standby state. A back bias generation circuit outputs a predetermined voltage. The predetermined voltage... Renesas Electronics Corporation

03/29/18 / #20180091167

Semiconductor device

According to one aspect, a semiconductor device (1) includes: an input circuit (11_1) configured to receive an analog signal, the analog signal and a digital signal being selectively input; an input circuit (11_4) configured to be driven by a power supply common to the input circuit (11_1) and receive a... Renesas Electronics Corporation

03/29/18 / #20180091719

Backlight correction program and semiconductor device

In a related-art backlight correction process, an exposure time needs to be controlled, thus causing a problem for those who do not manufacture lenses and sensors on their own that it is difficult to implement the backlight correction process. According to one embodiment, a backlight correction process is performed by... Renesas Electronics Corporation

03/29/18 / #20180091739

Camera controller, image processing module, and semiconductor system

A camera module detects a camera shake in an optical axis in an optical system based on a detection result by a vibration detecting sensor. To correct a part amount of a camera shake, the module controls an actuator in a manner that a correction lens shifts in a plane... Renesas Electronics Corporation

03/29/18 / #20180092176

Semiconductor device

There was a problem that it was difficult for a semiconductor device in the related art to increase the switching frequency of a step-up circuit, and it was difficult to stabilize an output current and an output voltage. A semiconductor device controls a step-up circuit including an inductor and a... Renesas Electronics Corporation

03/22/18 / #20180079376

Control system and semiconductor device

A semiconductor device for controlling an apparatus includes a first memory that stores data indicating, in association with each other, a factor that occurs with respect to the apparatus and control contents of the apparatus to be performed with respect to the factor; a second memory, and a processor executing... Renesas Electronics Corporation

03/22/18 / #20180080963

Current detection semiconductor device and semiconductor device

A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second... Renesas Electronics Corporation

03/22/18 / #20180080976

Semiconductor device and diagnosing semiconductor device

A semiconductor device includes a logic circuit, a memory circuit having a plurality of first static memory cells formed by a transistor on the semiconductor substrate, a monitor circuit having a second static memory cell formed by a transistor on the semiconductor substrate, the monitor circuit being configured to apply... Renesas Electronics Corporation

03/22/18 / #20180080984

Semiconductor device, diagnostic test, and diagnostic test circuit

A semiconductor device includes a system bus, a plurality of Central Processing Unit (CPU) cores each connected to the system bus, including a scan chain, and being assigned one or more tasks and configured to perform one of the tasks in a normal operation state, and a diagnostic test circuit... Renesas Electronics Corporation

03/22/18 / #20180081275

Exposure apparatus, exposure method, and device manufacturing method

An exposure apparatus includes a polarizing member polarizing illumination light, and a filter having at least one opening. The polarizing member includes a first polarizing unit and a second polarizing unit arranged so as to surround the first polarizing unit. The second polarizing unit is configured so as to polarize... Renesas Electronics Corporation

03/22/18 / #20180081819

Data processing method, computer readable medium and data processing device

A data processing method for a data processing device, the data processing device including: a program execution unit comprising a processor, and memories on a plurality of layers; an arithmetic control unit that receives a program and attribute values, the program including a plurality of subroutines for causing the processor... Renesas Electronics Corporation

03/22/18 / #20180082745

Semiconductor device

Provided is a semiconductor device including nonvolatile memory cells each including a FinFET having excellent memory characteristics. The semiconductor device includes a semiconductor substrate, memory cells each formed in the semiconductor substrate and having a split-gate structure including an opposed-gate selection gate electrode, a memory gate electrode, and a pair... Renesas Electronics Corporation

03/22/18 / #20180082872

Semiconductor device manufacturing method

The semiconductor device manufacturing method according to the embodiment includes the steps of: forming a barrier layer over an interlayer insulating film over a semiconductor substrate; forming a wiring layer over the barrier layer; forming a mask having an opening and configured by a photosensitive organic film over the wiring... Renesas Electronics Corporation

03/22/18 / #20180082887

Manufacturing semiconductor device and semiconductor device

A photoresist pattern is not formed in an outer circumferential region from an outer circumferential end of a semiconductor substrate up to 0.5 mm to 3.0 mm, in a process for patterning a silicon oxide film which will serve as a hard mask. A part of the silicon oxide film... Renesas Electronics Corporation

03/22/18 / #20180082891

Manufacturing semiconductor device

As a barrier metal film, a titanium film is formed by a sputtering process, and a titanium nitride film is formed to cover the titanium film by a CVD process. Next, the back surface of a semiconductor substrate is cleaned by spraying a cleaning chemical liquid toward the back surface... Renesas Electronics Corporation

03/22/18 / #20180082944

Semiconductor device and its manufacturing method

In a semiconductor device having a capacitive element, an increase in a leak current caused by the generation of a parasitic MOSFET is avoided by thinning the insulating film between the electrodes of the capacitive element and thickening the interlayer insulating film. The semiconductor device is provided with a capacitive... Renesas Electronics Corporation

03/22/18 / #20180082977

Method of manufacturing semiconductor device

A wire bonding step includes a step of exposing a wire and a pad electrode to a reducing gas atmosphere, forming a first hydroxyl layer on a surface of a ball portion, and forming a second hydroxyl layer on a surface of the pad electrode, a first bonding step of... Renesas Electronics Corporation

03/22/18 / #20180082991

Semiconductor device

A semiconductor device includes a normally-on junction FET having a first gate electrode, a first source electrode and a first drain electrode, a normally-off MOSFET having a second gate electrode, a second source electrode and a second drain electrode, and a voltage applying unit which applies a voltage to the... Renesas Electronics Corporation

03/22/18 / #20180083044

Manufacturing semiconductor device

A substrate in which an insulating layer, a semiconductor layer and an insulating film are stacked on a semiconductor substrate and an element isolation region is embedded in a trench is prepared. After the insulating film in a bulk region is removed by dry etching and the semiconductor layer in... Renesas Electronics Corporation

03/22/18 / #20180083130

Semiconductor device and manufacturing the same

A semiconductor device includes trench gate electrodes, an emitter coupling section that couples them with each other, an interlayer insulating film arranged in a hybrid sub-cell region and an inactive cell region, and a contact trench penetrating it. Also, the contact trench is divided in a crossing region of extending... Renesas Electronics Corporation

03/22/18 / #20180083154

Semiconductor device

To achieve a high-reliability germanium photoreceiver. A photoreceiver portion of a germanium photoreceiver comprised of a p type silicon core layer, an i type germanium layer, and an n type silicon layer is covered with a second insulating film and from a coupling hole formed in the second insulating film,... Renesas Electronics Corporation

Patent Packs
03/22/18 / #20180083494

Power supply device, and control power supply device

A power supply device includes a plurality of power sources each including an antenna and an AC/DC conversion unit that converts an AC signal received by the antenna to a DC signal, a plurality of consolidating units each including a first consolidating circuit that selectively consolidates a plurality of DC... Renesas Electronics Corporation

03/22/18 / #20180083557

Motor drive device and motor system

There are provided a motor drive device and a motor system that can reduce the torque ripple of a motor. An SPM drive unit includes a plurality of high side transistors and low side transistors coupled to drive terminals of multiple phases respectively, and applies drive voltages to the drive... Renesas Electronics Corporation

03/22/18 / #20180083607

Semiconductor device

The present invention provides a semiconductor device capable of properly performing equalization even when the transfer rate of serial data is changed. A semiconductor device includes: an addition circuit of adding input data and feedback data and outputting addition data; a first sampling circuit of sampling the addition data from... Renesas Electronics Corporation

03/22/18 / #20180083740

Communication apparatus and communication method

The efficiency of signal transmission is improved. A communication apparatus includes a memory unit, a communication control unit, and an updating unit. A retransmission interval value is stored in the memory unit. The communication control unit transmits a first signal and receives a response signal corresponding to the first signal... Renesas Electronics Corporation

03/22/18 / #20180084189

Lens module system, image sensor, and controlling lens module

In an existing camera, a control program of a whole camera including a control program for controlling a lens group and a sensor needs to be entirely created by a camera manufacturer, which increases the number of man-hours of product development. According to one embodiment, in a lens module system,... Renesas Electronics Corporation

03/15/18 / #20180073935

Semiconductor device

A method of sensing a temperature of a semiconductor device, includes: measuring, by a time measuring circuit, time until a count value, which is obtained from a counter by counting a first signal having a frequency corresponding to a first voltage, reaches a largest count value which can be counted... Renesas Electronics Corporation

03/15/18 / #20180074927

Drawing processing device, diagnostic test method and program

A drawing processing device includes a GPU, a diagnosis circuit which executes a diagnostic test of the GPU dividedly and a control unit which controls execution of the divided diagnostic tests by the diagnosis circuit. The control unit schedules so as to complete execution of drawing processes for one frame... Renesas Electronics Corporation

03/15/18 / #20180074940

Debug system, microcomputer, and its method

A microcomputer includes a CPU core, a memory which stores a program to be debugged and a debugging program, an event detection unit which detects establishment of an event, a debug interruption generation unit which transits a program to the debugging program when the event is established, and a debug... Renesas Electronics Corporation

03/15/18 / #20180075313

Data generation device and image processing system and method

A data generation device is configured to be able to communicate with an external device performing an image process. The data generation device includes a data generation unit that generates a data unit including image data received from a camera via a first communication interface and sensor data received from... Renesas Electronics Corporation

03/15/18 / #20180075911

Storage device and managing storage device

A storage device includes a plurality of flash memory cells, a controller which writes data into a memory cell which is used as the cell which stores data therein in the plurality of flash memory cells and performs resetting of a threshold voltage of a timer cell used for decision... Renesas Electronics Corporation

03/15/18 / #20180076115

Manufacturing semiconductor device and semiconductor device

An improvement is achieved in the reliability of a semiconductor device. After a resin sealing portion is formed to seal a die pad, a semiconductor chip mounted over the die pad, a plurality of leads, and a plurality of wires electrically connecting a plurality of pad electrodes of the semiconductor... Renesas Electronics Corporation

03/15/18 / #20180076117

Method of manufacturing a semiconductor device

An improvement is achieved in the performance of a semiconductor device. The semiconductor device includes a metal plate having an upper surface (first surface), a lower surface (second surface) opposite to the upper surface, and a plurality of side surfaces located between the upper and lower surfaces and having a... Renesas Electronics Corporation

03/15/18 / #20180076191

Semiconductor device

In a semiconductor device including a resistance element, an electrostatic protection element, including a parasitic bipolar transistor having the resistance element as a component, is provided. That is, instead of providing a dedicated electrostatic protection element in a semiconductor device, a function as an electrostatic protection element is also achieved... Renesas Electronics Corporation

03/15/18 / #20180076206

Semiconductor device and a manufacturing method thereof

The reliability and performances of a semiconductor device having a nonvolatile memory are improved. A control gate electrode is formed over a semiconductor substrate via a first insulation film. A memory gate electrode is formed over the semiconductor substrate via a second insulation film having a charge accumulation part. The... Renesas Electronics Corporation

03/15/18 / #20180076245

Method of manufacturing semiconductor device and semiconductor device

A performance of a semiconductor device is improved. A method of manufacturing a semiconductor device according to one embodiment includes a step of mounting a cover member via a bonding material on an upper surface of a frame member fixed on a wiring substrate, and a step of curing the... Renesas Electronics Corporation

Patent Packs
03/15/18 / #20180076286

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a first-conductivity-type semiconductor substrate serving as a drain layer; a first-conductivity-type epitaxial layer formed on the semiconductor substrate; a first-conductivity-type source layer formed in a surface part of the epitaxial layer; two second-conductivity-type gate layers formed in the surface part of the epitaxial layer so as... Renesas Electronics Corporation

03/15/18 / #20180076308

Semiconductor device and producing the same

In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion... Renesas Electronics Corporation

03/15/18 / #20180076312

Semiconductor device and manufacturing semiconductor device

A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a first opening with agate insulating film in between, the first opening running up to the middle of the channel layer through the barrier layer.... Renesas Electronics Corporation

03/15/18 / #20180076313

Semiconductor device and manufacturing the semiconductor device

Properties of a semiconductor device are improved. A semiconductor device having a superjunction structure, in which p-type column regions and n-type column regions are periodically arranged, is configured as follows. Each n-type column region has a vertical section including an n-type epitaxial layer located between trenches and a tapered embedded... Renesas Electronics Corporation

03/15/18 / #20180076318

Semiconductor device and manufacturing the same

According to an embodiment, semiconductor device 1 includes: a drift layer 12 of a first conductivity type; a base layer 13 of a second conductivity type; a source layer 30 of the first conductivity type; a gate trench 21 penetrating the source layer 30 and the base layer 13, and... Renesas Electronics Corporation

03/15/18 / #20180076614

Semiconductor device and power control device

To realize a reduction in the number of parts in a system including a driver IC (semiconductor device). A high potential side power supply voltage is applied to a power supply application area. A high side area is formed with a circuit which includes a driver driving a high side... Renesas Electronics Corporation

03/15/18 / #20180076748

Control device

In a sensorless control of a motor, due to the characteristic of a response frequency, an induced voltage, a magnetic pole position estimation gain, a current control gain, and a speed control gain are closely related. An object of the invention is to enable the induced voltage and the frequency... Renesas Electronics Corporation

03/15/18 / #20180076816

Temperature measurement circuit, integrated circuit, and temperature measurement method

It is possible to flexibly respond to accuracy required for a temperature sensor. An oscillator 11 generates a clock signal. The oscillator 11 is configured to be capable of changing a relationship between a frequency of the clock signal and a temperature. A counter 13 is configured to count the... Renesas Electronics Corporation

03/15/18 / #20180076933

Usb device, data transfer system and data transfer method

To prevent an increase in a circuit configuration that is used for a case in which when a header is incorrect under a specific condition, a correctly-received payload is kept and only the header is resent. A USB device according to the present disclosure includes a first processing unit configured... Renesas Electronics Corporation

03/15/18 / #20180077413

Semiconductor device, moving image processing system, controlling semiconductor device

A semiconductor device sequentially receives a plurality of whole images, each of which includes a plurality of small screen images and which are temporally continuous and form a moving image, and decodes a received whole image. Here, the semiconductor device includes a reception unit that receives the whole image including... Renesas Electronics Corporation

03/15/18 / #20180077446

Content output device and program

A memory interface which is coupled to the bus, and which is connectable to a memory for temporarily accumulating the video data and the audio data output from the demultiplexer.... Renesas Electronics Corporation

03/08/18 / #20180065579

Airbag control device and semiconductor device

An ECU includes a boosting circuit that boosts an input power supply voltage, a backup capacitor that charges a backup power supply in accordance with a boosted voltage boosted by the boosting circuit, an airbag ignition circuit that drives an airbag with the backup power supply charged by the backup... Renesas Electronics Corporation

03/08/18 / #20180067150

Semiconductor integrated circuit device and electronic device for driving a power semiconductor device

Adjustment of drive control based on a detection voltage of a transformer requires a loop time, and therefore high-speed processing of the adjustment is difficult. A semiconductor integrated circuit device includes a driving circuit that drives a power semiconductor device and a driving capability control circuit that controls a driving... Renesas Electronics Corporation

03/08/18 / #20180067675

Semiconductor apparatus, processor system, and control method thereof

A processor system (10) includes: a first memory controller (16) that controls writing/reading data to/from a first memory (60); a second memory controller (17) that controls writing/reading data to/from a second memory (70); a first processor (13) that inputs and outputs the data from and to the first memory through... Renesas Electronics Corporation

03/08/18 / #20180067766

Multi-thread processor

A multi-thread processor includes a plurality of hardware threads that generates a plurality of mutually independent instruction streams, respectively and a scheduler that schedules the plurality of hardware threads.... Renesas Electronics Corporation

03/08/18 / #20180067793

Flash memory

The present invention aims at providing a flash memory that can perform a refresh operation at an appropriate time before a read error occurs. The controller performs the first read operation in which the memory cell as the read target is made to draw out the potential of one of... Renesas Electronics Corporation

03/08/18 / #20180067882

Multiprocessor system

The present invention realizes a functional safety of a multiprocessor system without tightly coupling processor elements. When causing a plurality of processor elements to execute the same data processing and realizing a functional safety of the processor element, there is adopted a bus interface unit that performs control of performing... Renesas Electronics Corporation

03/08/18 / #20180068320

Semiconductor product quality management system, semiconductor product quality management method, and automobile

Analysis of the cause of a failure is started within a short period of time after the occurrence ensuring a longer period of time to narrow down the target range of products assumed to contain a failure actualization risk of the same type. When first ID information is received from... Renesas Electronics Corporation

03/08/18 / #20180068501

Multiprocessor system and vehicle control system

It is possible to achieve monitoring of a processor element while suppressing the cost. A multiprocessor system 1 includes a bus mechanism including a storage unit 6 configured to store bus access information when a first processor element 2 has executed a process to be monitored, a requesting unit 7... Renesas Electronics Corporation

03/08/18 / #20180068708

Semiconductor device

A semiconductor device includes: a first cell; a second cell; a first match line and a second match line; a first search line pair, first data being transmitted through the first search line pair; a second search line pair, second data being transmitted through the second search line pair; a... Renesas Electronics Corporation

03/08/18 / #20180068710

Semiconductor device having multiport memory

A semiconductor device enabling expansion of a noise margin. For example, in a memory area in which each memory cell MC is coupled to a word line WLA for a first port and a word line WLB for a second port, and a plurality of memory cells MC are disposed... Renesas Electronics Corporation

03/08/18 / #20180068712

Semiconductor device

A semiconductor device including an active mode and a standby mode as operation modes, includes: a first power source line which accepts the supply of power in the active mode; a second power source line which accepts the supply of power in the active mode and the standby mode; a... Renesas Electronics Corporation

03/08/18 / #20180068845

Manufacturing semiconductor device

The reliability of a semiconductor device is improved. In a manufacturing method, a film to be processed is formed over a circular semiconductor substrate, and a resist layer whose surface has a water-repellent property is formed thereover. Subsequently, the water-repellent property of the resist layer in the outer peripheral region... Renesas Electronics Corporation

03/08/18 / #20180068856

Method of manufacturing semiconductor device

To achieve the above, poly-silicon films are formed inside a trench in a main surface of a semiconductor substrate and over the semiconductor substrate. Further, phosphorus is thermally diffused into each poly-silicon film from a phosphorous film over an upper surface of the poly-silicon film. Still further, a silicon oxide... Renesas Electronics Corporation

03/08/18 / #20180068910

Method of manufacturing semiconductor device and semiconductor device

To enhance reliability of a test by suppressing defective bonding of a solder in the test of a semiconductor device, a method of manufacturing the semiconductor device includes: preparing a semiconductor wafer that includes a first pad electrode provided with a first cap film and a second pad electrode provided... Renesas Electronics Corporation

03/08/18 / #20180068936

Semiconductor device and manufacturing the same

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and... Renesas Electronics Corporation

03/08/18 / #20180068942

Electronic device

This invention provides an electronic device with improved reliability. The electronic device has a wiring board with a back-surface ground pattern formed at the back surface of the board. The back-surface ground pattern is provided with a notch from which a board member is exposed.... Renesas Electronics Corporation

03/08/18 / #20180068964

Semiconductor device and manufacturing the same

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming,... Renesas Electronics Corporation

03/08/18 / #20180068971

Semiconductor device

Provided is a semiconductor device which can be prevented from increasing in size. The semiconductor device includes a semiconductor chip having a first main surface and a second main surface opposite to the first main surface and a wiring substrate over which the semiconductor chip is mounted such that the... Renesas Electronics Corporation

03/08/18 / #20180068990

Optical coupling device, manufacturing method thereof, and power conversion system

In order to improve properties, an optical coupling device has a potting resin and an internal mold resin between a light emitting element and a light receiving element. The internal mold resin is a cured product of a composition having an epoxy resin and a curing agent, and is a... Renesas Electronics Corporation

Social Network Patent Pack
03/08/18 / #20180069010

Semiconductor device and manufacturing semiconductor device

A semiconductor device having a high degree of freedom of layout has a first part AR1, in which a plurality of p-type wells PW and n-type wells NW are alternately arranged to be adjacent to each other along an X-axis direction. A common power feeding region (ARP2) for the plurality... Renesas Electronics Corporation

03/08/18 / #20180069014

Semiconductor device

An insulating film, which is sandwiched between a gate electrode formed on an SOI layer constituting an SOI substrate and an epitaxial layer formed on the SOI layer and including a high-concentration diffusion region and is formed in contact with a side wall of the gate electrode, is set as... Renesas Electronics Corporation

03/08/18 / #20180069038

Semiconductor device and manufacturing method thereof

A semiconductor device includes a semiconductor substrate, a photoelectric conversion element, a first isolation insulating film, and a current blocking region. The first isolation insulating film is formed around the photoelectric conversion element. The current blocking region is formed in a region between the photoelectric conversion element and the first... Renesas Electronics Corporation

03/08/18 / #20180069044

Semiconductor device and manufacturing method thereof

Provided is a semiconductor device which allows an alignment mark used for the manufacturing of a solid-state image sensor (semiconductor device) having a back-side-illumination structure to be formed in a smaller number of steps. The semiconductor device includes a semiconductor layer having a first main surface and a second main... Renesas Electronics Corporation

03/08/18 / #20180069051

Semiconductor device and manufacturing method thereof

A resistance change element includes first and second electrodes spaced apart from each other, a metal material layer adjacent to the first electrode, an oxide layer adjacent to each of the metal material layer and the first electrode, and a resistance change layer disposed continuously between the second and first... Renesas Electronics Corporation

03/08/18 / #20180069073

Semiconductor device and manufacturing the same

A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with... Renesas Electronics Corporation

03/08/18 / #20180069108

Narrow active cell ie type trench gate igbt and a manufacturing a narrow active cell ie type trench gate igbt

In an equal width active cell IE type IGBT, a wide active cell IE type IGBT, and the like, an active cell region is equal in trench width to an inactive cell region, or the trench width of the inactive cell region is narrower. Accordingly, it is relatively easy to... Renesas Electronics Corporation

03/08/18 / #20180069109

Semiconductor device and manufacturing the same

A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the two element portions. The interposition portion includes a p-type body region formed in a part of a semiconductor layer, the part being located between two trenches, and two... Renesas Electronics Corporation

03/08/18 / #20180069110

Semiconductor device and manufacturing the same

A semiconductor device including an IGBT element having features of a low on-state voltage and a low turn-off loss is provided. The semiconductor device is comprised of a trench gate type IGBT element. The IGBT element includes: a plurality of gate trench electrodes to which gate potential is given; and... Renesas Electronics Corporation

03/08/18 / #20180069119

Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and manufacturing the same

A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted,... Renesas Electronics Corporation

Patent Packs
03/08/18 / #20180069537

Level shift circuit and semiconductor device

A level shift circuit includes amplitude amplifying circuits AMPt1, AMPb1, and a sublevel shift circuit SLSC1. The amplitude amplifying circuits AMPt1, AMPb1 are supplied with a reference power supply potential GND and an external power supply potential VDD2 and, in response to an input signal (INT, INB) of an internal... Renesas Electronics Corporation

03/08/18 / #20180069563

Analog to digital conversion circuit

An analog-to-digital (AD) convertor includes: an AD conversion circuit; and a correction circuit that corrects an output value of the AD conversion circuit based on a correction value, wherein the correction circuit generates a plurality of elemental correction values based on a plurality of output values which are converted values... Renesas Electronics Corporation

03/08/18 / #20180069565

Semiconductor device and ad conversion device

A semiconductor device includes an AD conversion unit that performs AD conversion on an input signal based on a reference voltage to be supplied, a reference voltage detection unit that detects the reference voltage supplied to the AD conversion unit, and a control unit that corrects a result of the... Renesas Electronics Corporation

03/08/18 / #20180069737

Signal converter and control device

A signal converter 100 includes, for at least two-phase signals detected by a resolver excited by a carrier signal having a carrier frequency fc, a first phase shifter 101 that shifts a phase of a first phase signal of the resolver with a pole at a frequency f1 lower than... Renesas Electronics Corporation








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