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Renesas Electronics Corporation patents


Recent patent applications related to Renesas Electronics Corporation. Renesas Electronics Corporation is listed as an Agent/Assignee. Note: Renesas Electronics Corporation may have other listings under different names/spellings. We're not affiliated with Renesas Electronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Renesas Electronics Corporation-related inventors


Method of manufacturing semiconductor device, and probe card

Reliability of an electrical test of a semiconductor wafer is improved. A method of manufacturing a semiconductor device includes a step of performing an electrical test of a semiconductor element by allowing contact portions (tips) of a force terminal (contact terminal) and a sense terminal (contact terminal) held by a... Renesas Electronics Corporation

Processor system, engine control system and control method

A processor system includes a master processor that successively processes a plurality of tasks, a checker processor that successively processes at least one of the plurality of tasks, and a control circuit that performs control so that the checker processor operates when the master processor and the checker processor perform... Renesas Electronics Corporation

Semiconductor device and control method thereof

A semiconductor device (1) includes a first processing unit (10-1), a second processing unit (10-2), a writing unit (12), a storage unit (14), and a processing control unit (20). The writing unit (12) writes first information related to processing of each of the first processing unit (10-1) and the second... Renesas Electronics Corporation

Information processing device and processor

An illegal address access blocking circuit includes a first register and a second register to set upper and lower limit values of an address range within which access to an external device is allowed. A first comparator compares a first value and the upper limit value, and outputs a high... Renesas Electronics Corporation

Data conversion device, search system, and method

A data conversion device generates entry data which is to be compared with a search key and is stored in an associative memory that can hold three or more values. The data conversion device includes a conversion circuit for extracting a plurality of character strings from an inputted rule in... Renesas Electronics Corporation

Semiconductor integrated circuit device

A semiconductor integrated circuit device includes a control unit which causes a column selection circuit to separate bit line pairs from a common bit line pair and causes a sense amplifier circuit to amplify a potential difference between the common bit line pair precharged by a precharge circuit, in response... Renesas Electronics Corporation

Semiconductor device

A semiconductor device includes a plurality of nonvolatile memory cells (1). Each of the nonvolatile memory cells comprises a MOS type first transistor section (3) used for information storage, and a MOS type second transistor section (4) which selects the first transistor section. The second transistor section has a bit... Renesas Electronics Corporation

Semiconductor memory device and test method therefor

A test method for a semiconductor memory device having a plurality of memory cells arranged in a matrix form, the test method including writing first data into a plurality of memory cells, while a plurality of word lines disposed in the columns of the memory cells are deselected, driving the... Renesas Electronics Corporation

Manufacturing semiconductor device

In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF4 gas and C3H2F4 gas as its components.... Renesas Electronics Corporation

Semiconductor device and manufacturing method thereof

The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties... Renesas Electronics Corporation

Method of manufacturing semiconductor device

A semiconductor device has a first lead group comprised of a plurality of first leads, a second lead group comprised of a plurality of second leads, and a first suspension lead arranged between the first lead group and the second lead group. Further, the semiconductor device has a first tape... Renesas Electronics Corporation

Electronic device

Each of first and second semiconductor devices mounted on a substrate includes an emitter terminal electrically connected with a front surface electrode of a semiconductor chip and exposed from a main surface of a sealing body located on a front surface side of the semiconductor chip. Each of the first... Renesas Electronics Corporation

Semiconductor device

A semiconductor device is provided with a SOI substrate including a semiconductor substrate, a BOX layer on the semiconductor substrate, and a semiconductor layer on the BOX layer, a multilayer wiring formed over a main surface of the SOI substrate, and an inductor comprised of the multilayer wiring. In a... Renesas Electronics Corporation

Method of manufacturing a semiconductor device

A non-leaded semiconductor device comprises a sealing body for sealing a semiconductor chip, a tab in the interior of the sealing body, suspension leads for supporting the tab, leads having respective surfaces exposed to outer edge portions of a back surface of the sealing body, and wires connecting pads formed... Renesas Electronics Corporation

Semiconductor device

A semiconductor device includes an annular seal ring formed in a seal ring region surrounding a circuit forming region. The seal ring includes a BOX layer, an n-type semiconductor layer, and an annular electrode portion comprised of multiple layers of wirings. The electrode portion is electrically connected with the n-type... Renesas Electronics Corporation

Semiconductor device and manufacturing method thereof

A flip-chip mounting technique with high reliability is provided in flip-chip mounting using a Cu pillar. In a semiconductor device to be coupled to a mounting board via a Cu pillar, the Cu pillar is caused to have a laminated structure including a pillar layer, a barrier layer, and a... Renesas Electronics Corporation

Semiconductor device and manufacturing method thereof

In a semiconductor device (SP1) according to an embodiment, a solder resist film (first insulating layer, SR1) which is in contact with the base material layer, and a resin body (second insulating layer, 4) which is in contact with the solder resist film and the semiconductor chip, are laminated in... Renesas Electronics Corporation

Semiconductor integrated circuit device

A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral... Renesas Electronics Corporation

Method for manufacturing a semiconductor device

The improvement of the reliability of a semiconductor device having a split gate type MONOS memory is implemented. An ONO film and a second polysilicon film are sequentially formed so as to fill between a first polysilicon film and a dummy gate electrode. Then, the dummy gate electrode is removed.... Renesas Electronics Corporation

Method of manufacturing semiconductor device

An improvement is achieved in the reliability of a semiconductor device. A structure is obtained in which a first insulating film for a gate insulating film of a memory element is formed over a semiconductor substrate located in a memory region, a second insulating film for a gate insulating film... Renesas Electronics Corporation

Semiconductor device and manufacturing the same

Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the time of forming sidewalls having two kinds of different widths on a substrate. A sidewall-shaped silicon oxide film is formed over... Renesas Electronics Corporation

Semiconductor device and manufacturing the same

A semiconductor device manufacturing method includes preparing a semiconductor substrate of a first conductivity type, forming a semiconductor layer of the first conductivity type over a main surface of the semiconductor substrate, forming a plurality of first ditches in an upper surface portion of the semiconductor layer such that the... Renesas Electronics Corporation

Semiconductor device

The semiconductor device including: two fins having rectangular parallelepiped shapes arranged in parallel in X-direction; and a gate electrode arranged thereon via a gate insulating film and extending in Y-direction is configured as follows. First, a drain plug is provided over a drain region located on one side of the... Renesas Electronics Corporation

Semiconductor device

A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The linear hole collector cell region is formed from a plurality of divided hole collector cell regions arranged apart from each other in the... Renesas Electronics Corporation

Power mosfet, an igbt, and a power diode

Super-junction MOSFETs by trench fill system requires void-free filling epitaxial growth. This may require alignment of plane orientations of trenches in a given direction. Particularly, when column layout at chip corner part is bilaterally asymmetrical with a diagonal line between chip corners, equipotential lines in a blocking state are curved... Renesas Electronics Corporation

Semiconductor light-emitting element and manufacturing the same

A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or less. The first transparent electrode is provided in a region which is overlapped with a p-side pad electrode when seen in a plane view,... Renesas Electronics Corporation

Semiconductor package

Provided is a magnetic shield having improved shielding properties from an external magnetic field. A magnetic shield MS1 has in-plane magnetization as remanent magnetization, and is adapted to generate a perpendicular component in the magnetization direction by applying a magnetic field in the perpendicular direction to the magnetic shield.... Renesas Electronics Corporation

Semiconductor power module and drive system for electric motor

Erroneous mounting of a semiconductor power module can be more easily detected. A semiconductor power module (9) according to the present invention includes: a status signal generation unit (90) configured to detect a status in the semiconductor power module (9) and generate and output a status signal indicating the detected... Renesas Electronics Corporation

Semiconductor device, radio communication device, and control radio communication device

A semiconductor device includes a receiving unit that receives a radio signal, which includes a quadrature conversion circuit and an analog-to-digital converter, a received signal strength measurement unit, a threshold comparison unit, a demodulation unit, and a threshold setting unit. The analog-to-digital converter converts a received radio signal from the... Renesas Electronics Corporation

Radio communication device and radio communication method

According to one embodiment, a radio communication device 1 includes a variable frequency divider 17 that divides a frequency of a reference clock REFCLK and outputs a frequency divided clock DCLK; a controller 15 that controls a frequency dividing ratio of the variable frequency divider 17 so that an integral... Renesas Electronics Corporation

Semiconductor integrated circuit device, printed board and manufacturing the semiconductor integrated circuit device

A semiconductor integrated circuit device includes a component built-in board in which at least a first core layer on which a first electronic component is mounted, a second core layer on which a second electronic component is mounted, an adhesive layer arranged between the first core layer and the second... Renesas Electronics Corporation

Semiconductor device and manufacturing same

A semiconductor layer that constitutes each of a first optical signal line, a second optical signal line, a grating coupler, an optical modulator, and a p-type layer of a germanium optical receiver is formed by a polycrystalline silicon film. Crystal grains of polycrystalline silicon exposed on an upper surface of... Renesas Electronics Corporation

Hil simulation system and control the same

An HIL simulation system includes: an arithmetic device executing an input process of receiving input data transferred from software to a memory and an output process of transferring output data to the memory; an operation state designating unit designating an operation state indicating the number of times of the output... Renesas Electronics Corporation

Data processing system

A method of performing a cooperative data processing, said method comprising performing a plurality of processes in each of a plurality of control modules capable of communicating with each other to perform the cooperative data processing, the plurality of processes includes a required application process of the cooperative data processing.... Renesas Electronics Corporation

Semiconductor test controlling tester

A tester instruction generation unit generates a tester instruction for terminals of a plurality of devices connected to a tester based on an instruction of a user program and causes an instruction storage unit to store the tester instruction. A transfer mode setting unit sets a transfer mode to either... Renesas Electronics Corporation

02/08/18 / #20180039858

Image recognition apparatus, image recognition system, and image recognition method

An image recognition apparatus 100 includes a gradient feature computation unit 120 configured to calculate, from an image divided into a plurality of blocks, gradient feature values for each of the plurality of blocks, a combination pattern storage unit 160 configured to store a plurality of combination patterns of the... Renesas Electronics Corporation

02/08/18 / #20180040282

Image processing device and image processing method

An image processing device includes a luminance modulator operable to receive a video input signal and operable to calculate a video output signal to be supplied to a display panel, a peak value detector operable to calculate a peak value as a maximum luminance in a prescribed region of the... Renesas Electronics Corporation

02/08/18 / #20180040365

Semiconductor device and manufacturing the same

A semiconductor device which suppresses soft errors and functions as a non-volatile memory and a method for manufacturing the same. In the semiconductor device, a first non-volatile memory element and a second non-volatile memory element are electrically coupled to a first memory node and a second memory node through a... Renesas Electronics Corporation

02/08/18 / #20180040373

Semiconductor device including tcam cell arrays capable of skipping tcam-cell search in response to control signal

The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding... Renesas Electronics Corporation

02/08/18 / #20180040379

Semiconductor device

A semiconductor device is provided that is capable of reducing the possibility of change in state of memory elements formed over a semiconductor substrate with an insulating layer interposed therebetween. The semiconductor device includes nonvolatile memory elements and a bias circuit. Each of the nonvolatile memory elements includes a drain... Renesas Electronics Corporation

02/08/18 / #20180040478

Semiconductor device and manufacturing the same

In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this... Renesas Electronics Corporation

02/08/18 / #20180040487

Manufacturing semiconductor device and semiconductor device

In the manufacturing method of a semiconductor device according to an embodiment, a suspension lead is connected to a chip mounting section on which a semiconductor chip is mounted. Also, the suspension lead includes: a first tab connection section connected to the chip mounting section and extending in a first... Renesas Electronics Corporation

02/08/18 / #20180040521

Semiconductor device

A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in... Renesas Electronics Corporation

02/08/18 / #20180040523

Semiconductor device and semiconductor device measuring method

A semiconductor device reduces measurement time. The semiconductor device according to an embodiment of the invention includes: plural series-coupled resistance elements for testing; plural switches coupled to a coupling path coupling the resistance elements; and plural selection circuits to select, by turning on or off the switches, a number of... Renesas Electronics Corporation

02/08/18 / #20180040552

Semiconductor device and manufacturing method thereof

A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip,... Renesas Electronics Corporation

02/08/18 / #20180040598

Method for manufacturing semiconductor device

When a memory chip is mounted over a logic chip, a recognition range including a recognition mark formed at a back surface of the logic chip is imaged and a shape of the recognition range is recognized, alignment of a plurality of bumps of the logic chip and a plurality... Renesas Electronics Corporation

02/08/18 / #20180040609

Semiconductor device

A semiconductor device provided with: a first input/output circuit connected to a first pad; a second input/output circuit disposed in the direction along one side constituted by a chip edge in relation to the first input/output circuit, the second input/output circuit being connected to a second pad; and an ESD... Renesas Electronics Corporation

02/08/18 / #20180040612

Semiconductor device

At a peripheral portion located at an outermost periphery of an active region surrounded by a dummy region within a sense IGBT cell, an n+-type semiconductor region is formed over an upper surface of a well of a floating state adjacent to a trench gate electrode embedded into a trench... Renesas Electronics Corporation

02/08/18 / #20180040664

Method for manufacturing image capturing device and image capturing device

An offset spacer film (OSS) is formed on a side wall surface of a gate electrode (NLGE, PLGE) to cover a region in which a photo diode (PD) is disposed. Next, an extension region (LNLD, LPLD) is formed using the offset spacer film and the like as an implantation mask.... Renesas Electronics Corporation

02/08/18 / #20180041074

Electric power receiving device and non-contact power supply system

In a non-contact power supply system, an electric power receiving device with suppressed heat generation is provided. The electric power receiving device is configured with a resonance circuit which includes a resonance capacity and a resonance coil acting as a receiving antenna, and receives electric power in a non-contact manner... Renesas Electronics Corporation

02/08/18 / #20180041220

Semiconductor device

An object of the present invention is to shorten time required for detecting disconnection in an input terminal of an A/D conversion circuit. A semiconductor device includes a first input channel that couples a first input terminal and an A/D conversion unit to each other, a second input channel that... Renesas Electronics Corporation

02/08/18 / #20180041233

Transmitter circuit, semiconductor apparatus and data transmission method

The transmitter circuit according to one embodiment includes a pulse generating circuit generating a pulse signal based on edges of input data, a first output driver outputting, based on the pulse signal, a first output pulse signal according to one of the edges to a first end of an external... Renesas Electronics Corporation

02/08/18 / #20180041308

Crc calculation circuit, semiconductor device, and radar system

Provided is a CRC calculation circuit capable of dealing with various types of generator polynomials with a simple configuration. A CRC calculation circuit (100) includes a generator polynomial register (110) configured to store polynomial data, and a plurality of CRC calculation units (120) connected in series and provided so as... Renesas Electronics Corporation

02/08/18 / #20180041357

Semiconductor device, allocation method, and display system

A semiconductor device includes a plurality of IP cores, a plurality of storage devices, a configuration information acquiring unit that acquires configuration information for specifying a timing when the IP core accesses the storage device, and an allocation determining unit that determines the storage device allocated to the IP core.... Renesas Electronics Corporation

02/01/18 / #20180032124

Power control controller, semiconductor device, and semiconductor system

An object of the present invention is to finely adjust a voltage for each processor core. A semiconductor system includes a semiconductor device and a power supply device configured to supply a fixed voltage to a supply voltage line. The semiconductor device includes a plurality of power control controllers. Each... Renesas Electronics Corporation

02/01/18 / #20180032391

Watchdog circuit, power ic and watchdog monitor system

A watchdog timer circuit for use in microcomputer monitor systems is disclosed. This circuit includes a timer circuit responsive to receipt of a count clock signal for counting it up, and a timer control circuit which loads an externally inputted data signal (stn) in sync with a timer refresh instruction... Renesas Electronics Corporation

02/01/18 / #20180033649

Manufacturing semiconductor device

The reliability of a semiconductor device is improved. In a manufacturing method of a semiconductor device, when resin enters a ditch formed on a lower surface of a chip mounting portion by a process of forming a sealing body made of the resin, the resin embedded in the ditch is... Renesas Electronics Corporation

02/01/18 / #20180033702

Manufacturing semiconductor device

Degradation of reliability of a semiconductor device is prevented. An electrode pad included mainly of aluminum is formed over amain surface of a semiconductor wafer. Subsequently, a first insulating member and a second insulating member are formed over the main surface of the semiconductor wafer so as to cover the... Renesas Electronics Corporation

02/01/18 / #20180033709

Semiconductor device and manufacturing same

To provide a semiconductor device having improved reliability. The semiconductor device has a wiring board, bonding land, semiconductor chip mounted on the wiring board via an adhesive layer and having a pad electrode, bonding wire connecting the pad electrode with the bonding land, and sealing body. The sealing body is,... Renesas Electronics Corporation

02/01/18 / #20180033757

Semiconductor device

In the semiconductor device, a bump electrode which connects a semiconductor chip and a wiring board is made up of a first part surrounded by an insulating film and a second part exposed from the insulating film. Since it is possible to reduce a width of the bump electrode while... Renesas Electronics Corporation

02/01/18 / #20180033854

Semiconductor device and manufacturing method thereof

A p-channel transistor formed in a separation region has a RESURF layer that functions as a current path, is formed in an epitaxial layer, and is a p-type semiconductor layer, and a buried layer that is overlapped with the RESURF layer in planar view, is formed under the RESURF layer,... Renesas Electronics Corporation

02/01/18 / #20180033855

Semiconductor device

In a semiconductor device, a p+ back gate region (PBG) is arranged in a main surface (S1) between first and second portions (P1, P2) of an n+ source region (SR), and arranged on a side closer to an n+ drain region (DR) with respect to the n+ source region (SR).... Renesas Electronics Corporation

02/01/18 / #20180034404

Semiconductor device and semiconductor system equipped with the same

A semiconductor device includes a semiconductor chip, a lead frame and one bonding wire and the other bonding wire which couple together the semiconductor chip and the lead frame. The semiconductor chip includes one pad which is coupled to one bonding wire and to which an output signal which has... Renesas Electronics Corporation

01/25/18 / #20180025755

Semiconductor device

The present invention provides a semiconductor device that can reduce the power consumption. The semiconductor device includes a plurality of sub-blocks each including a memory cell array, and a plurality of sub-search units corresponding to the respective sub-blocks. Of the data stored in each row of the memory cell array,... Renesas Electronics Corporation

01/25/18 / #20180025991

Semiconductor device and a manufacturing the same

To provide a technique capable of positioning of a semiconductor chip and a mounting substrate with high precision by improving visibility of an alignment mark. In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is... Renesas Electronics Corporation

Patent Packs
01/25/18 / #20180025998

Semiconductor device

A semiconductor device with enhanced performance. The semiconductor device has a high speed transmission path which includes a first coupling part to couple a semiconductor chip and an interposer electrically, a second coupling part to couple the interposer and a wiring substrate, and an external terminal formed on the bottom... Renesas Electronics Corporation

01/25/18 / #20180026024

Semiconductor device

An area of a semiconductor device having a FINFET can be reduced. The drain regions of an n-channel FINFET and a p-channel FINFET are extracted by two second local interconnects from a second Y gird between a gate electrode and a dummy gate adjacent thereto, to a third Y grid... Renesas Electronics Corporation

01/25/18 / #20180026099

Semiconductor device and manufacturing the semiconductor device

Properties of a semiconductor device are improved. A semiconductor device is configured so as to include a voltage clamp layer, a channel underlayer, a channel layer, and a barrier layer, which are formed in order above a substrate, a trench that extends up to the middle of the channel layer... Renesas Electronics Corporation

01/25/18 / #20180026134

Semiconductor device and manufacturing the same

In an LDMOS having an element isolation region of an STI structure, there is prevented an occurrence of insulation breakdown which might be caused when electrons generated in a semiconductor substrate near an edge portion of a bottom face of the element isolation region are poured into a gate electrode.... Renesas Electronics Corporation

01/25/18 / #20180026541

Semiconductor device

There is to provide a semiconductor device capable of activating a circuit quickly, operating with a lower power consumption in a steady state, and coping with the dispersion of the elements. The semiconductor device includes an amplifier coupled to a power voltage, to output a voltage based on a reference... Renesas Electronics Corporation

01/18/18 / #20180018011

Method of controlling electronic controller units

Power supply of ECUs connected to a communication network is optimally controlled so that power consumption is reduced. A transceiver/receiver converts a message of a differential signal received via a CAN bus into a digital signal. A select circuit determines whether the converted message is in a CAN format or... Renesas Electronics Corporation

01/18/18 / #20180018211

Semiconductor memory device

The present invention provides a semiconductor memory device that can perform failure detection of an address decoder by a simple method with a low area overhead. The semiconductor memory device includes: a first memory array having a plurality of first memory cells arrange in matrix; a plurality of word lines... Renesas Electronics Corporation

01/18/18 / #20180018257

Search device and semiconductor device

To provide a search device with less memory consumption, the search device includes a first associative memory searched with a first search key, a second associative memory searched with a second search key, a concatenated search data generating unit that generates first search information based on hit information including multiple... Renesas Electronics Corporation

01/18/18 / #20180019013

Semiconductor device

A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the... Renesas Electronics Corporation

01/18/18 / #20180019160

Semiconductor device and manufacturing method therefor

Provided are a semiconductor device and a manufacturing method therefor that can prevent the breakage of an element and in which the control of impurity amounts is less susceptible to variations in manufacturing processes. A semiconductor substrate has a front surface and includes hole portions extending from the front surface... Renesas Electronics Corporation

01/18/18 / #20180019189

Semiconductor device manufacturing method

A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and... Renesas Electronics Corporation

01/18/18 / #20180019237

Electronic device

In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer... Renesas Electronics Corporation

01/18/18 / #20180019260

Semiconductor device and manufacturing the same

On a semiconductor substrate having an SOI region and a bulk silicon region formed on its upper surface, epitaxial layers are formed in source and drain regions of a MOSFET formed in the SOI region, and no epitaxial layer is formed in source and drain regions of a MOSFET formed... Renesas Electronics Corporation

01/18/18 / #20180019303

Semiconductor device and its manufacturing method

In an element isolation region defining an element formation region, there is formed an element isolation unit including an element isolation unit and the other element isolation unit. The other element isolation unit is arranged in a direction intersecting a direction in which the element isolation unit extends from the... Renesas Electronics Corporation

01/18/18 / #20180019315

Manufacturing semiconductor device and semiconductor device

The thickness of an insulating film, which will serve as an offset spacer film and is formed in an offset monitor region, is managed as the thickness of an offset spacer film formed over the side wall surface of a gate electrode of an SOTB transistor STR, etc. When the... Renesas Electronics Corporation

Patent Packs
01/18/18 / #20180019748

Semiconductor device

A semiconductor device includes a driver circuit having a plurality of FinFETs, a memory cell having a plurality of FinFETs and supplied with a first output signal from the driver circuit through each of word lines, a first power supply wiring supplied with a first power supply potential, a second... Renesas Electronics Corporation

01/11/18 / #20180012645

Electronic device

An electronic device includes a substrate including an upper surface, a clock output pad formed in a control device mounting area of the upper surface, a command/address output pad formed in the control device mounting area, a clock signal main wiring connected to the clock output pad, a command/address signal... Renesas Electronics Corporation

01/11/18 / #20180012831

Semiconductor device

This invention provides a multi-pin semiconductor device as a low-cost flip-chip BGA. In the flip-chip BGA, a plurality of signal bonding electrodes in a peripheral area of the upper surface of a multilayer wiring substrate are separated into inner and outer ones and a plurality of signal through holes coupled... Renesas Electronics Corporation

01/11/18 / #20180012891

Semiconductor device

A semiconductor device (1) according to an embodiment includes: a semiconductor substrate; a first well (15) formed on the semiconductor substrate; a second well (15) formed on the semiconductor substrate; first fins (11) formed in the first well; second fins (21) formed in the second well; and a first electrode... Renesas Electronics Corporation

01/11/18 / #20180012901

Semiconductor device and manufacturing the same

An improvement is achieved in the reliability of a semiconductor device. In a memory cell region, a plurality of fins are provided which are portions of a semiconductor substrate extending in an x-direction along a main surface of the semiconductor substrate and spaced apart from each other in a y-direction... Renesas Electronics Corporation

01/11/18 / #20180012959

Semiconductor device and manufacturing the same

A super junction structure having a high aspect ratio is formed. An epitaxial layer is dividedly formed in layers using the trench fill process, and when each of the layers has been formed, trenches are formed in that layer. For example, when a first epitaxial layer has been formed, first... Renesas Electronics Corporation

01/11/18 / #20180012984

Semiconductor device and manufacturing method thereof

A semiconductor device includes a first trench gate electrode and a second trench gate electrode which are electrically connected to a gate electrode, and a third trench gate electrode and a fourth trench gate electrode which are electrically connected to an emitter electrode. A plurality of p+ type semiconductor regions... Renesas Electronics Corporation

01/11/18 / #20180013414

Semiconductor apparatus

There has been a problem in semiconductor apparatuses of related art in which a circuit operation cannot be returned after a reverse current occurred. In one embodiment, a semiconductor apparatus includes a timer block configured to count up a count value to a predetermined value in response to a control... Renesas Electronics Corporation

01/11/18 / #20180013457

Wireless communication device and power measurement device equipped with the same

The present invention provides a wireless communication device that can receive a high frequency signal with a high sensitivity by reducing the noise received from a DC-DC converter, as well as a power measurement device equipped with such a wireless communication device. According to an embodiment, a wireless communication device... Renesas Electronics Corporation

01/04/18 / #20180003771

Semiconductor device, electronic device, and self-diagnosis semiconductor device

A semiconductor device addresses to a problem in which a current consumption variation rate increases during BIST execution causing resonance noise generation in a power supply line. The semiconductor device includes a self-diagnosis control circuit, a scan target circuit including a combinational circuit and a scan flip-flop, and an electrically... Renesas Electronics Corporation

01/04/18 / #20180005685

Semiconductor device comprising charge pump circuit for generating substrate bias voltage

In a semiconductor device, a substrate voltage generation circuit includes frequency-dividing/multiplying circuits for dividing or multiplying a frequency of a clock signal, and charge pump circuits configured to be operative in accordance with clock signals having divided or multiplied frequencies to generate substrate bias voltages. The frequency-dividing/multiplying circuits have a... Renesas Electronics Corporation

01/04/18 / #20180005704

Semiconductor device

There is to provide a semiconductor device capable of improving the reliability. The semiconductor device is provided with an anti-fuse element including a semiconductor substrate, a well region of a first conductivity type formed in the semiconductor substrate, and a gate electrode formed over the semiconductor substrate through a gate... Renesas Electronics Corporation

01/04/18 / #20180005845

Packing semiconductor device

A packing method for a semiconductor device includes a step of preparing the semiconductor device that has a sealing body having a principal surface and a plurality of leads, and a step of preparing a base carrier tape that has a peripheral portion, a step portion, and a pocket portion.... Renesas Electronics Corporation

01/04/18 / #20180005967

Semiconductor device and manufacturing the semiconductor device

Reliability of a semiconductor device is improved. A slope is provided on a side face of an interconnection trench in sectional view in an interconnection width direction of a redistribution layer. The maximum opening width of the interconnection trench in the interconnection width direction is larger than the maximum interconnection... Renesas Electronics Corporation

01/04/18 / #20180006048

Method of manufacturing a semiconductor device

A control gate electrode and a memory gate electrode of a memory cell of a non-volatile memory are formed in a memory cell region of a semiconductor substrate, and a dummy gate electrode is formed in a peripheral circuit region. Then, n+-type semiconductor regions for a source or a drain... Renesas Electronics Corporation

01/04/18 / #20180006068

Semiconductor device and manufacturing same

When a trench that penetrates a semiconductor substrate in a scribe region in a solid-state imaging element of a back side illumination type, occurrence of contamination of the solid-state imaging element caused by an etching step for foaming the trench or a dicing step for singulating a semiconductor chip is... Renesas Electronics Corporation

01/04/18 / #20180006491

Semiconductor device

The disclosed invention is intended to prevent malfunction of an internal circuit because of unwanted power supply switching caused by a noise during operation of a semiconductor device powered by a backup power supply, while eliminating wasteful consumption of the backup power supply. A first switching transition time after coupling... Renesas Electronics Corporation

01/04/18 / #20180007233

Image forming device and semiconductor device

The document platen has a document platen display unit controlled by the controller. The scanning mechanism can read an image of a document placed on the document platen and transmit read initial image data to the controller. The controller can cause the document platen display unit to display image data... Renesas Electronics Corporation

01/04/18 / #20180007268

Semiconductor device, correction method in semiconductor device, and correction camera module

A semiconductor device coupled to a device that outputs positional information representing a position, the semiconductor device including: a first external terminal to which the positional information is supplied; and a second external terminal, wherein sensitivity deviation information representing the deviation of the sensitivity of the device is received through... Renesas Electronics Corporation

01/04/18 / #20180007298

Imaging device

To provide an imaging device capable of reducing the amount of data with a simple method. An imaging device includes: a plurality of sensor elements which is arranged in a matrix shape and each of which generates a photoelectric conversion voltage in accordance with an input light level; and a... Renesas Electronics Corporation

01/04/18 / #20180007301

Semiconductor device

A semiconductor device includes a pixel array including a plurality of pixels arranged in a matrix, each pixel including a first switch and a second switch, a scanning circuit, in a first mode, enabling a first signal to be output from the pixel by setting the first and second switches... Renesas Electronics Corporation








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