Real Time Touch



new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




Real Time Touch

Sensor Electronic Technology Inc patents


Recent patent applications related to Sensor Electronic Technology Inc. Sensor Electronic Technology Inc is listed as an Agent/Assignee. Note: Sensor Electronic Technology Inc may have other listings under different names/spellings. We're not affiliated with Sensor Electronic Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Sensor Electronic Technology Inc-related inventors


 new patent  P-type contact to semiconductor heterostructure

A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. ... Sensor Electronic Technology Inc

 new patent  Aao-based light guiding structure and fabrication thereof

A light guiding structure is provided. The structure includes an anodized aluminum oxide (aao) layer and a fluoropolymer layer located immediately adjacent to a surface of the aao layer. ... Sensor Electronic Technology Inc

 new patent  Ultraviolet diffusive illumination

A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. ... Sensor Electronic Technology Inc

Solid-state lighting structure with integrated control

A solid-state light source (ssls) structure with integrated control. In one embodiment, a ssls control circuit can be integrated with a ssls structure formed from a multiple of sslss. ... Sensor Electronic Technology Inc

Semiconductor structure with stress-reducing buffer structure

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 gpa and 2.0 gpa. ... Sensor Electronic Technology Inc

Ultraviolet-based sterilization

A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. ... Sensor Electronic Technology Inc

Electronic gadget disinfection

A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. ... Sensor Electronic Technology Inc

Diffusive light illuminator

A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. ... Sensor Electronic Technology Inc

Ultraviolet-based detection and sterilization

A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. ... Sensor Electronic Technology Inc

Patterned layer design for group iii nitride layer growth

A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group iii nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. ... Sensor Electronic Technology Inc

Semiconductor material doping

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. ... Sensor Electronic Technology Inc

Ultraviolet-based sterilization

A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. ... Sensor Electronic Technology Inc

Flexible ultraviolet device

A solution in which an ultraviolet radiation source is mounted on a flexible substrate is provided. The flexible substrate is capable of having a deformation curvature of at least 0.1 inverse meters. ... Sensor Electronic Technology Inc

Semiconductor heterostructure with multiple active regions

A semiconductor heterostructure for an optoelectronic device includes a base semiconductor layer having one or more semiconductor heterostructure mesas located thereon. One or more of the mesas can include a set of active regions having multiple main peaks of radiative recombination at differing wavelengths. ... Sensor Electronic Technology Inc

04/05/18 / #20180093002

Ultraviolet illuminator

A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. ... Sensor Electronic Technology Inc

04/05/18 / #20180092308

Controlling ultraviolet intensity over a surface of a light sensitive object

An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-a and ultraviolet-b radiation to irradiate the surface. ... Sensor Electronic Technology Inc

03/08/18 / #20180069154

Contact configuration for optoelectronic device

An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include an n-type semiconductor layer having a surface. ... Sensor Electronic Technology Inc

03/08/18 / #20180069151

Deep ultraviolet light emitting diode

A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. ... Sensor Electronic Technology Inc

03/01/18 / #20180062040

Opto-electronic device with two-dimensional injection layers

An opto-electronic device with two-dimensional injection layers is described. The device can include a semiconductor structure with a semiconductor layer having one of an n-type semiconductor layer or a p-type semiconductor layer, and a light generating structure formed on the semiconductor layer. ... Sensor Electronic Technology Inc

03/01/18 / #20180054975

Controlling light exposure of light sensitive object

An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. ... Sensor Electronic Technology Inc

02/22/18 / #20180053879

Metallic contact for optoelectronic semiconductor device

A contact to a semiconductor layer in a light emitting structure is provided. The contact can include a plurality of contact areas formed of a metal and separated by a set of voids. ... Sensor Electronic Technology Inc

02/15/18 / #20180047870

Patterned layer design for group iii nitride layer growth

A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group iii nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. ... Sensor Electronic Technology Inc

02/08/18 / #20180036444

Ultraviolet disinfection case

A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. ... Sensor Electronic Technology Inc

02/01/18 / #20180028700

Ultraviolet-based mildew control

A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet radiation in an ultraviolet range of approximately 260 nanometers to approximately 310 nanometers to harm mildew present on a plant or ground surface. ... Sensor Electronic Technology Inc

01/25/18 / #20180026157

Ultraviolet reflective rough adhesive contact

A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. ... Sensor Electronic Technology Inc

01/25/18 / #20180021465

Ultraviolet-based bathroom surface sanitization

A solution for cleaning and/or sterilizing one or more surfaces in a bathroom is provided. The sterilization can be performed using ultraviolet sources, which can emit ultraviolet radiation directed onto the surface(s). ... Sensor Electronic Technology Inc

12/28/17 / #20170373224

Device with inverted large scale light extraction structures

An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. ... Sensor Electronic Technology Inc

12/28/17 / #20170373222

Semiconductor layer including compositional inhomogeneities

A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. ... Sensor Electronic Technology Inc

12/28/17 / #20170369335

Ultraviolet transparent enclosure

A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. ... Sensor Electronic Technology Inc

12/28/17 / #20170368215

Storage device including ultraviolet illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. ... Sensor Electronic Technology Inc

12/21/17 / #20170361125

Skin tanning and phototherapy system and apparatus

A tanning or a phototherapy system including a light source including light emitting elements configured to emit ultraviolet (uv) light having different peak wavelengths, a controller configured to control luminous characteristics of the light source, and a sensor configured to sense at least one of the luminous characteristics of the light source and a user's skin condition, in which the luminous characteristics of the light source are controlled by the controller based on the user's skin condition sensed by the sensor, and controlling the luminous characteristics comprises increasing or decreasing luminous intensity of one or more of the light emitting elements.. . ... Sensor Electronic Technology Inc

12/21/17 / #20170360011

Lighting system for reptile and reptile habitat including the same

A lighting system includes an ultraviolet (uv) light source including a uva light source configured to emit uva light having various wavelengths; and a uvb light source configured to emit uvb light and control a lighting direction of the uvb light towards a target, a sensor including a uva sensor configured to sense the uva light, and a control unit configured to control lighting characteristics of the uv light source, in which the lighting characteristics include an intensity of the uva light.. . ... Sensor Electronic Technology Inc

12/07/17 / #20170352776

Semiconductor heterostructure with at least one stress control layer

A semiconductor heterostructure for an optoelectronic device is disclosed. The semiconductor heterostructure includes at least one stress control layer within a plurality of semiconductor layers used in the optoelectronic device. ... Sensor Electronic Technology Inc

11/30/17 / #20170345968

Non-uniform multiple quantum well structure

A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. ... Sensor Electronic Technology Inc

11/30/17 / #20170340761

Multi wave sterilization system

Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a virus destruction operating configuration and a bacteria disinfection operating configuration. ... Sensor Electronic Technology Inc

11/23/17 / #20170338371

Semiconductor heterostructure with stress management

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. ... Sensor Electronic Technology Inc

11/23/17 / #20170333583

Storage device including target uv illumination ranges

Ultraviolet radiation is directed within an area at target wavelengths, target intensities, a target temporal distribution, and/or a target spatial distribution. The target attribute(s) of the ultraviolet radiation can correspond to at least one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, an ethylene decomposition operating configuration, and/or the like.. ... Sensor Electronic Technology Inc

10/26/17 / #20170309776

Deep ultraviolet light emitting diode

A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. ... Sensor Electronic Technology Inc

10/26/17 / #20170303567

Movable ultraviolet radiation source

A solution for treating a surface with ultraviolet radiation is provided. A movable ultraviolet source is utilized to emit a beam of ultraviolet radiation having a characteristic cross-sectional area smaller than an area of the surface to be treated. ... Sensor Electronic Technology Inc

10/12/17 / #20170290937

Ultraviolet illuminator for footwear treatment

An ultraviolet (uv) footwear illuminator for footwear treatment is disclosed. In one embodiment, the uv footwear illuminator includes an insert adapted for placement in an article of footwear. ... Sensor Electronic Technology Inc

10/12/17 / #20170290934

Ultraviolet surface illumination system

A diffusive ultraviolet illuminator is provided. The illuminator can include a reflective mirror and a set of ultraviolet radiation sources located within a proximity of the focus point of the reflective mirror. ... Sensor Electronic Technology Inc

10/05/17 / #20170287698

Patterned layer design for group iii nitride layer growth

A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group iii nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. ... Sensor Electronic Technology Inc

10/05/17 / #20170284933

Integrated ultraviolet analyzer

An integrated ultraviolet analyzer is described. The integrated ultraviolet analyzer can include one or more ultraviolet analyzer cells, each of which includes one or more ultraviolet photodetectors and one or more solid state light sources, which are monolithically integrated. ... Sensor Electronic Technology Inc

10/05/17 / #20170284866

Adjustable multi-wavelength lamp

An adjustable multi-wavelength lamp is described. The lamp can include a plurality of emitters. ... Sensor Electronic Technology Inc

10/05/17 / #20170281812

Treatment of fluid transport conduit with ultraviolet radiation

An approach for treating a fluid transport conduit with ultraviolet radiation is disclosed. A light guiding unit, operatively coupled to a set of ultraviolet radiation sources, encloses the fluid transport conduit. ... Sensor Electronic Technology Inc

09/14/17 / #20170263805

Optoelectronic device with modulation doping

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. ... Sensor Electronic Technology Inc

09/07/17 / #20170256672

Group iii nitride heterostructure for optoelectronic device

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. ... Sensor Electronic Technology Inc

09/07/17 / #20170256623

Perforating contact to semiconductor layer

A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). ... Sensor Electronic Technology Inc

08/31/17 / #20170251533

Access resistance modulated solid-state light source

A solid-state light source with built-in access resistance modulation is described. The light source can include an active region configured to emit electromagnetic radiation during operation of the light source. ... Sensor Electronic Technology Inc

08/31/17 / #20170248744

Light emitting device for emitting diffuse ultraviolet light

A diffusive layer including a laminate of a plurality of transparent films is provided. At least one of the plurality of transparent films includes a plurality of diffusive elements with a concentration that is less than a percolation threshold. ... Sensor Electronic Technology Inc

08/31/17 / #20170245616

Ultraviolet razor blade treatment

An ultraviolet razor blade treatment system for providing a cleaning treatment to a shaving razor is disclosed. The ultraviolet razor blade treatment system can include a shaving razor cleaning unit that has at least one ultraviolet radiation source and sensor to clean surfaces of the shaving razor for purposes of disinfection, sterilization, and/or sanitization.. ... Sensor Electronic Technology Inc

08/31/17 / #20170245527

Disinfection of grain using ultraviolet radiation

A system for irradiation of grain foods using one or more ultraviolet emitting sources is provided. The system includes an irradiation region in which the grain foods are irradiated by ultraviolet light. ... Sensor Electronic Technology Inc

08/10/17 / #20170229612

Patterned substrate design for layer growth

A patterned surface for improving the growth of semiconductor layers, such as group iii nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. ... Sensor Electronic Technology Inc

08/10/17 / #20170229611

Stress relieving semiconductor layer

A semiconductor structure, such as a group iii nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. ... Sensor Electronic Technology Inc

08/10/17 / #20170229610

Semiconductor material doping

A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. ... Sensor Electronic Technology Inc

08/03/17 / #20170221801

Multi-terminal device packaging

A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.. ... Sensor Electronic Technology Inc

08/03/17 / #20170219854

Integrated optical modulator

An optical modulator is provided. The optical modulator can include a wave guide layer made of an electro-optical material with two or more electrodes directly contacting the wave guide layer. ... Sensor Electronic Technology Inc

08/03/17 / #20170219479

Ultraviolet-based gas sensor

A solution for evaluating a sample gas for a presence of a trace gas, such as ozone, is provided. The solution uses an ultraviolet source and an ultraviolet detector mounted in a chamber. ... Sensor Electronic Technology Inc

08/03/17 / #20170219174

Method of fabricating a light emitting device with optical element

A solution for packaging an optoelectronic device by aligning an optical element with respect to the package is provided. After initial placement of the optical element on the device package, an emitted light pattern can be measured and compared to a target light pattern. ... Sensor Electronic Technology Inc

08/03/17 / #20170218208

Curing ultraviolet sensitive polymer materials

An approach for curing ultraviolet sensitive polymer materials (e.g., polymer inks, coatings, and adhesives) using ultraviolet radiation is disclosed. The ultraviolet sensitive polymer materials curing can utilize ultraviolet light at different wavelength emissions arranged in a random, mixed or sequential arrangement. ... Sensor Electronic Technology Inc

07/20/17 / #20170207367

Semiconductor device with improved light propagation

A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. ... Sensor Electronic Technology Inc

07/13/17 / #20170197002

Flexible article for uv disinfection

A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. ... Sensor Electronic Technology Inc

07/06/17 / #20170196061

Solid-state lighting structure with integrated control

A solid-state light source (ssls) structure with integrated control. In one embodiment, a ssls control circuit can be integrated with a ssls structure formed from a multiple of sslss. ... Sensor Electronic Technology Inc

07/06/17 / #20170194475

Lateral/vertical semiconductor device with embedded isolator

A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. ... Sensor Electronic Technology Inc

07/06/17 / #20170189711

Medical device with radiation delivery

Medical devices capable of delivering and/or sensing electromagnetic radiation within an organism body are described. Placement of a location for delivering and/or sending the electromagnetic radiation is done through the skin of the organism body. ... Sensor Electronic Technology Inc

06/29/17 / #20170186910

Device with transparent and higher conductive regions in lateral cross section of semiconductor layer

A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. ... Sensor Electronic Technology Inc

06/29/17 / #20170186905

Heterostructure including anodic aluminum oxide layer

A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. ... Sensor Electronic Technology Inc

06/22/17 / #20170179335

Semiconductor heterostructure with stress management

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. ... Sensor Electronic Technology Inc

06/08/17 / #20170157276

Ultraviolet-based detection and sterilization

A system capable of detecting and/or sterilizing surface(s) of an object using ultraviolet radiation is provided. The system can include a disinfection chamber and/or handheld ultraviolet unit, which includes ultraviolet sources for inducing fluorescence in a contaminant and/or sterilizing a surface of an object. ... Sensor Electronic Technology Inc

05/04/17 / #20170121701

Vaccine preparation using ultraviolet radiation

An approach for preparing a vaccine using ultraviolet radiation is described. Aspects of this approach involve multiple iterations of inactivation of the vaccine using an ultraviolet radiation source at a set of different wavelengths and dosages. ... Sensor Electronic Technology Inc

04/27/17 / #20170117438

Optoelectronic device with a nanowire semiconductor layer

A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more semiconductor layers containing columnar nanostructures (e.g., nanowires). ... Sensor Electronic Technology Inc

04/27/17 / #20170117437

Light extraction from optoelectronic device

An optoelectronic device configured for improved light extraction through a region of the device other than the substrate is described. A group iii nitride semiconductor layer of a first polarity is located on the substrate and an active region can be located on the group iii nitride semiconductor layer. ... Sensor Electronic Technology Inc

04/20/17 / #20170110628

Semiconductor structure with stress-reducing buffer structure

A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 gpa and 2.0 gpa. ... Sensor Electronic Technology Inc

04/13/17 / #20170104140

Ultraviolet device encapsulant

A composite material, which can be used as an encapsulant for an ultraviolet device, is provided. The composite material includes a matrix material and at least one filler material incorporated in the matrix material that are both at least partially transparent to ultraviolet radiation of a target wavelength. ... Sensor Electronic Technology Inc

04/13/17 / #20170104138

Packaging for ultraviolet optoelectronic device

A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. ... Sensor Electronic Technology Inc

04/13/17 / #20170104135

Light emitting diode mounting structure

A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. ... Sensor Electronic Technology Inc

04/13/17 / #20170104132

Epitaxy technique for growing semiconductor compounds

A solution for fabricating a semiconductor structure is provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. ... Sensor Electronic Technology Inc

04/13/17 / #20170104131

Device including transparent layer with profiled surface for improved extraction

A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. ... Sensor Electronic Technology Inc

04/13/17 / #20170104129

Patterned layer design for group iii nitride layer growth

A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group iii nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. ... Sensor Electronic Technology Inc

04/13/17 / #20170101328

Ultraviolet transparent enclosure

A solution for disinfecting a fluid, colloid, mixture, and/or the like using ultraviolet radiation is provided. An ultraviolet transparent enclosure can include an inlet and an outlet for a flow of media to be disinfected. ... Sensor Electronic Technology Inc

04/13/17 / #20170100496

Ultraviolet system for disinfection

Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.. ... Sensor Electronic Technology Inc

04/13/17 / #20170100495

Storage device including ultraviolet illumination

Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. ... Sensor Electronic Technology Inc

04/13/17 / #20170100494

Ultraviolet treatment of light absorbing liquids

A system for providing ultraviolet treatment to light absorbing liquids, such as biological liquids in a medical instrument, is disclosed. The system can include an ultraviolet impenetrable housing configured to enclose a portion of the medical instrument containing the biological fluid. ... Sensor Electronic Technology Inc

04/06/17 / #20170098739

Contact configuration for optoelectronic device

An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. ... Sensor Electronic Technology Inc

04/06/17 / #20170098731

Light emitting heterostructure with partially relaxed semiconductor layer

A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. ... Sensor Electronic Technology Inc

04/06/17 / #20170098539

Material growth with temperature controlled layer

A metal-organic chemical vapor deposition (mocvd) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a mocvd growth process used to epitaxially grow semiconductor layers. ... Sensor Electronic Technology Inc

04/06/17 / #20170097466

Fluid-based light guiding structure and fabrication thereof

A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. ... Sensor Electronic Technology Inc

04/06/17 / #20170095585

Ultraviolet diffusive illumination

A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. ... Sensor Electronic Technology Inc

04/06/17 / #20170095582

Integrated flip chip device array

An optoelectronic device module with improved light emission of approximately 4π steradians is provided. In one embodiment, the optoelectronic device module includes a first and a second set of optoelectronic devices. ... Sensor Electronic Technology Inc

03/16/17 / #20170079102

Solid-state lighting structure with light modulation control

A solid-state light source (ssls) with light modulation control is described. A ssls device can include a main p-n junction region configured for recombination of electron-hole pairs for light emission. ... Sensor Electronic Technology Inc

03/16/17 / #20170077278

Device with channel having varying carrier concentration

A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.. ... Sensor Electronic Technology Inc

03/16/17 / #20170077085

Solid-state lighting structure with integrated short-circuit protection

A solid-state light source (ssls) with an integrated short-circuit protection approach is described. A device can include a ssls having an n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. ... Sensor Electronic Technology Inc

03/02/17 / #20170062657

Device including transparent layer with profiled surface for improved extraction

A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. ... Sensor Electronic Technology Inc

03/02/17 / #20170057842

Fluid disinfection using ultraviolet light

A fluid treatment system and method of treating fluid is described. The fluid treatment system can include a fluid transparency meter, which acquires data corresponding to an ultraviolet transparency of the fluid and a disinfection chamber within which a set of ultraviolet sources emit ultraviolet light onto the fluid located therein. ... Sensor Electronic Technology Inc

02/16/17 / #20170047495

Optoelectronic semiconductor device with ferromagnetic domains

An optoelectronic semiconductor device with one or more ferromagnetic domains and method for processing an optoelectronic semiconductor device and/or devices with the ferromagnetic domain(s) is described. In one embodiment, the optoelectronic semiconductor device can include a semiconductor structure having a substrate, an n-type contact layer formed over the substrate, an active layer formed over the n-type contact layer, and a p-type contact layer formed over the active layer; and at least one ferromagnetic domain located on the semiconductor structure. ... Sensor Electronic Technology Inc

02/16/17 / #20170047438

Normally-off field effect transistor

A normally-off transistor with a high operating voltage is provided. The transistor can include a barrier above the channel and an additional barrier layer located below the channel. ... Sensor Electronic Technology Inc

01/19/17 / #20170018680

P-type contact to semiconductor heterostructure

A contact to a semiconductor heterostructure is described. In one embodiment, there is an n-type semiconductor contact layer. ... Sensor Electronic Technology Inc

01/05/17 / #20170005246

Multi-layered contact to semiconductor structure

A multi-layered contact to a semiconductor structure and a method of making is described. In one embodiment, the contact includes a discontinuous chromium layer formed over the semiconductor structure. ... Sensor Electronic Technology Inc

01/05/17 / #20170005228

Semiconductor heterostructure with stress management

A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. ... Sensor Electronic Technology Inc

01/05/17 / #20170005224

Substrate structure removal

Fabrication of a heterostructure, such as a group iii nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can be epitaxially grown on a sacrificial layer, which is located on a substrate structure. ... Sensor Electronic Technology Inc








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Sensor Electronic Technology Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Sensor Electronic Technology Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###