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Seoul Opto Device Co Ltd
Seoul Opto Device Co Ltd_20100107
Seoul Opto Device Co Ltd_20100114
Seoul Opto Device Co Ltd_20100121
Seoul Opto Device Co Ltd_20131212
  

Seoul Opto Device Co Ltd patents

Recent patent applications related to Seoul Opto Device Co Ltd. Seoul Opto Device Co Ltd is listed as an Agent/Assignee. Note: Seoul Opto Device Co Ltd may have other listings under different names/spellings. We're not affiliated with Seoul Opto Device Co Ltd, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Seoul Opto Device Co Ltd-related inventors




Date Seoul Opto Device Co Ltd patents (updated weekly) - BOOKMARK this page
05/29/14Light-emitting diode package and fabricating the same
04/03/14Light emitting diode
03/27/14Light emitting diode chip having distributed bragg reflector and fabricating the same
03/20/14Patterned substrate for light emitting diode and light emitting diode employing the same
03/13/14Method of fabricating gallium nitride based semiconductor device
03/06/14Wafer level led package and fabricating the same
01/30/14Light emitting device for ac power operation
01/30/14Method of fabricating gallium nitride-based semiconductor device
01/09/14Light emitting device having vertically stacked light emitting diodes
12/26/13Light emitting device and manufacturing the same
12/19/13Light emitting diode chip
12/12/13Light emitting device and fabrication method thereof
12/05/13Light emitting diode having photonic crystal structure and fabricating the same
11/28/13Laminate substrate and fabricating the same
11/07/13High efficiency light emitting diode
10/03/13Near uv light emitting device
09/26/13Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and fabricating the same
09/12/13Light emitting device and manufacturing the same
09/12/13Light emitting diode chip having electrode pad
09/12/13Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and fabricating the same
09/05/13Light emitting device having a plurality of non-polar light emitting cells and a fabricating the same
08/29/13Semiconductor light emitting diode having ohmic electrode structure and manufacturing the same
08/29/13Light emitting diode assembly and fabricating the same
08/29/13Light emitting diode having electrode pads
08/15/13Light emitting device having mgo pyramid structure and fabricating the same
08/15/13Uv light emitting diode and manufacturing the same
07/04/13Light emitting device for ac power operation
06/13/13Light emitting diode having distributed bragg reflector
06/13/13Light emitting diode
06/06/13Light emitting diode and fabricating the same
05/30/13Light emitting diode having strain-enhanced well layer
05/30/13Light emitting diode with improved light extraction efficiency
05/16/13Light emitting device and manufacturing the same
05/16/13Semiconductor substrate, semiconductor device, and manufacturing methods thereof
05/02/13Method of fabricating semiconductor substrate and fabricating light emitting device
04/25/13Light emitting diode and fabricating the same
01/31/13Substrate assembly for crystal growth and fabricating light emitting device using the same
01/31/13Wafer level led package and fabricating the same
01/31/13Non-polar light emitting diode having photonic crystal structure and fabricating the same
01/24/13Ac light emitting diode and fabricating the same
01/10/13Light emitting diode having electrode pads
01/10/13Illumination system
12/27/12Light emitting diode having electrode pads
11/15/12Vertical gallium nitride-based light emitting diode and manufacturing the same
10/11/12Semiconductor substrate, semiconductor device, and manufacturing methods thereof
10/04/12Wafer level light emitting diode package and fabricating the same
09/27/12Light emitting device and fabrication method thereof
09/27/12Light emitting diode package and manufacturing the same
09/20/12Light emitting device having a plurality of non-polar light emitting cells and a fabricating the same
09/20/12Light emitting element with a plurality of cells bonded, manufacturing the same, and light emitting device using the same
08/30/12Light emitting device for ac power operation
08/16/12High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
08/09/12Method of fabricating semiconductor substrate and fabricating light emitting device
08/02/12Crystalline aluminum carbide thin film, semiconductor substrate having the aluminum carbide thin film formed thereon and fabricating the same
07/26/12Light emitting diode
07/05/12Semiconductor light-emitting diode and a production method therefor
06/28/12Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater
06/28/12Light emitting diode chip and fabricating the same
06/21/12High-quality non-polar/semi-polar semiconductor element on an unevenly patterned substrate and a production method therefor
06/21/12Light emitting diode with improved structure
06/14/12High-quality non-polar/semi-polar semiconductor element on tilt substrate and fabrication method thereof
06/14/12Light-emitting diode having an interlayer with high voltage density and manufacturing the same
06/07/12Light emitting device
06/07/12Method of fabricating light emitting diode
05/31/12Light emitting device and fabricating the same
Patent Packs
05/31/12Light emitting diode and fabricating the same
05/24/12Light emitting device for ac operation
05/17/12High efficiency light emitting diode and fabricating the same
05/03/12Light emitting device having plurality of non-polar light emitting cells and fabricating the same
04/19/12Light emitting device having a pluralilty of light emitting cells and package mounting the same
04/05/12Light emitting diode and fabricating the same
03/08/12Light emitting element
03/08/12Spectrum detector
03/01/12Light emitting diode with improved luminous efficiency
02/16/12Light emitting diode and fabricating the same
02/09/12Ultraviolet light emitting diode package
02/02/12Light emitting diode having distributed bragg reflector
01/26/12Method of fabricating semiconductor substrate and fabricating light emitting device
01/19/12Light emitting device with light emitting cells arrayed
01/12/12Light emitting device and fabricating the same
Patent Packs
01/12/12Light emitting device and fabricating the same
01/05/12Light emitting diode having a thermal conductive substrate and fabricating the same
12/29/11Light emitting diode
12/22/11Optical detector and spectrum detector
10/06/11High efficiency light emitting diode and fabricating the same
10/06/11High efficiency light emitting diode and fabricating the same
09/29/11Light emitting device having a pluralilty of light emitting cells and package mounting the same
09/22/11High efficiency light emitting diode
09/22/11High efficiency light emitting diode
09/15/11Light emitting device having a plurality of light emitting cells
09/08/11Light emitting diode
09/01/11Light emitting element with a plurality of cells bonded, manufacturing the same, and light emitting device using the same
08/25/11Light emitting diode having modulation doped layer
08/11/11Semiconductor substrate, semiconductor device, and manufacturing methods thereof
08/11/11Method of fabricating light emiting diode chip
07/28/11Counterfeit detector
07/28/11Light emitting device and fabricating the same
07/21/11Light emitting device having a pluralilty of light emitting cells and package mounting the same
07/21/11Light emitting device and fabricating the same
07/14/11Light emitting device and fabricating the same
07/07/11Light emitting diode having electrode pads
06/30/11Light emitting device and fabricating the same
06/30/11Light emitting diode
06/30/11Light emitting diode having electrode extensions
06/23/11Semiconductor substrate, semiconductor device, and manufacturing methods thereof
06/16/11Light emitting diode having electrode pads
06/02/11Light emitting diode chip having distributed bragg reflector and fabricating the same
05/19/11Light emitting diode chip having distributed bragg reflector, fabricating the same, and light emitting diode package having distributed bragg reflector
05/19/11Light emitting diode having electrode extensions for current spreading
04/14/11Light emitting device having isolating insulative layer for isolating light emitting cells from each other and fabricating the same
Social Network Patent Pack
03/17/11Ac light emitting diode having full-wave light emitting cell and half-wave light emitting cell
03/17/11Light emitting element with a plurality of cells bonded, manufacturing the same, and light emitting device using the same
03/03/11Light emitting diode
03/03/11Method of fabricating light emitting diode using laser lift-off technique and laser lift-off apparatus having heater
03/03/11Method of fabricating semiconductor substrate and fabricating light emitting device
02/17/11Light emitting element with a plurality of cells bonded, manufacturing the same, and light emitting device using the same
02/10/11Light emitting device for ac power operation
01/13/11Ac light emitting diode and fabricating the same
01/06/11Light emitting device and manufacturing the same
12/16/10Semiconductor substrate, fabricating the same, semiconductor device, and fabricating the same
Patent Packs
12/16/10Semiconductor substrate, semiconductor device, and manufacturing methods thereof
11/25/10Light emitting device employing nanowire phosphors
11/18/10Light emitting diode and fabricating the same
11/04/10Light emitting device for ac power operation
10/21/10Light emitting device and manufacturing the same
09/30/10Light emitting device having a plurality of light emitting cells and package mounting the same
09/02/10Light emitting device having a plurality of light emitting cells connected in series and fabricating the same
09/02/10Light emitting device having vertically stacked light emitting diodes
08/26/10Light emitting device having a plurality of light emitting cells and fabricating the same
08/26/10Light emitting device and manufacturing the same
08/05/10Light emitting device having a plurality of light emitting cells and package mounting the same
07/22/10Group iii nitride compound semiconductor device
07/01/10Light emitting device having a plurality of non-polar light emitting cells and a fabricating the same
07/01/10Light emitting device having plurality of non-polar light emitting cells and fabricating the same
06/24/10Light emitting device having plurality of light emitting cells and fabricating the same
06/17/10Light emitting diode with ito layer and fabricating the same
05/20/10Light emitting diode having indium nitride
05/13/10Ac light emitting diode
05/06/10Light emitting element with a plurality of cells bonded, manufacturing the same, and light emitting device using the same
04/29/10Light emitting diode for ac operation
04/29/10Light emitting diode for ac operation
04/22/10Ac light emitting diode and fabricating the same
04/22/10Ac light emitting device with long-persistent phosphor and light emitting device module having the same
04/01/10Light emitting device and fabricating the same
04/01/10Light emitting device and manufacturing the same
03/25/10Light emitting diode having light emitting cell with different size and light emitting device thereof
03/25/10Ultraviolet light emitting diode package
03/25/10Light emitting device for ac operation
03/11/10Light emitting diode having barrier layer of superlattice structure
03/11/10Luminous element having a plurality of cells
Patent Packs
03/04/10Light emitting device having isolating insulative layer for isolating light emitting cells from each other and fabricating the same
02/25/10Light emitting diode having extensions of electrodes for current spreading
02/25/10Light emitting device
02/25/10Light emitting device and manufacturing the same
02/18/10Method of fabricating light emiting diode chip
02/11/10Light emitting diode having algan buffer layer and fabricating the same
02/11/10Light emitting device for ac operation
02/11/10Light emitting diode with ito layer and fabricating the same
01/21/10Light emitting device and fabrication method thereof
01/14/10Light emitting device
01/14/10Light emitting diode having light emitting cell with different size and light emitting device thereof
01/14/10Light emitting device and fabricating the same
01/07/10Method of forming p-type compound semiconductor layer
12/24/09Light emitting device and manufacturing the same
12/17/09Ac light emitting device having photonic crystal structure and fabricating the same
11/26/09Light emitting device and manufacturing the same
11/12/09(al, ga, in)n-based compound semiconductor and fabricating the same
11/05/09Light emitting diode having alingap active layer and fabricating the same
11/05/09Light emitting device having a pluralilty of light emitting cells and package mounting the same
10/22/09Nitride semiconductor light emitting diode and fabricating the same
Social Network Patent Pack
10/01/09Light emitting device and manufacturing the same
08/06/09Light emitting diode and manufacturing the same
07/30/09Light emitting device having a plurality of light emitting cells and fabricating the same
07/23/09Group iii nitride compound semiconductor device
07/02/09Light emitting diode having a thermal conductive substrate and fabricating the same
06/25/09Method of forming p-type compound semiconductor layer
06/18/09Light emitting diode having active region of multi quantum well structure
04/30/09Light emitting diode
04/30/09Light emitting diode package
04/02/09Ac light emitting diode
03/26/09Nitride-based light emitting device
03/12/09Light emitting diode with improved structure
02/05/09Light emitting diode having algan buffer layer and fabricating the same
12/12/13Light emitting device and fabrication method thereof
01/21/10Light emitting device and fabrication method thereof
01/14/10Light emitting device and fabricating the same
01/07/10Method of forming p-type compound semiconductor layer







ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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