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Shanghai Huali Microelectronics Corporation patents


Recent patent applications related to Shanghai Huali Microelectronics Corporation. Shanghai Huali Microelectronics Corporation is listed as an Agent/Assignee. Note: Shanghai Huali Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with Shanghai Huali Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Shanghai Huali Microelectronics Corporation-related inventors


Method for forming shallow trenches of the dual active regions

The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate; secondly, using a first accurate photomask to expose and develop the semiconductor substrate, until the etch stop layer has been exposed on the top of the... Shanghai Huali Microelectronics Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the NMOS region and then performs an annealing process to turn the silicon material layer into a... Shanghai Huali Microelectronics Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the NMOS region and then performs an annealing process to turn the silicon material layer into a... Shanghai Huali Microelectronics Corporation

Kite shaped cavity for embedding material

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a kite-shaped cavity, and the shaped cavity is filled with silicon and germanium material. There are other embodiments as well.... Shanghai Huali Microelectronics Corporation

Method of fabricating semiconductor device and semiconductor device fabricated thereby

A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first SiGe seed layer with constant Ge content in the recesses; epitaxial growing a second SiGe layer with a constant Ge content higher than the Ge... Shanghai Huali Microelectronics Corporation

Semiconductor device with shaped cavities for embedding germanium material and double trench manufacturing processes thereof

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. A method for fabricating the semiconductor device may... Shanghai Huali Microelectronics Corporation

Methods and systems for reducing dislocation defects in high concentration epitaxy processes

Semiconductor devices including semiconductor junctions and semiconductor field effect transistors that exploit the straining of semiconductor materials to improve device performance are provided. Also described are methods for making semiconductor structures. Dislocation defect-free epitaxial grown structures that are embedded into a semiconductor base are provided. The epitaxial structures can extend... Shanghai Huali Microelectronics Corporation








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



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