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Shanghai Huali Microelectronics Corporation patents

Recent patent applications related to Shanghai Huali Microelectronics Corporation. Shanghai Huali Microelectronics Corporation is listed as an Agent/Assignee. Note: Shanghai Huali Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with Shanghai Huali Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Shanghai Huali Microelectronics Corporation-related inventors

Date Shanghai Huali Microelectronics Corporation patents (updated weekly) - BOOKMARK this page
03/02/17Methods and systems for reducing dislocation defects in high concentration epitaxy processes
11/03/16Method of manufacturing a fin field effect transistor
10/20/16Shaped cavity for sige filling material
10/20/16Shaped cavity for sige filling material
10/13/16Method for forming cobalt barrier layer and metal interconnection process
08/18/16Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereof
08/18/16Semiconductor device having a silicon and germanium material filling a cavity region comprising a notch region formed within a semiconductor substrate
08/04/16Embedded sige epitaxy test pad
07/28/16Methods and systems for improved uniformity of sige thickness
09/24/15Methods and systems for using oxidation layers to improve device surface uniformity
03/05/15Process of manufacturing the gate oxide layer
02/19/15Method of forming the gate with the lele double pattern
01/29/15Method of detecting transistors mismatch in a sram cell
01/15/15Method of forming salicide block with reduced defects
01/15/15Method of forming gate oxide layer
01/01/15Method of reducing contamination in cvd chamber
01/01/15Method of inspecting misalignment of polysilicon gate
01/01/15Method of forming nickel salicide on a silicon-germanium layer
12/25/14Method of detecting and measuring contact alignment shift relative to gate structures in a semicondcutor device
12/04/14Method of forming strained source and drain regions in a p-type finfet structure
12/04/14Method of forming sigma-shaped trench
12/04/14Method of improving the yield of a semiconductor device
11/27/14Device structure suitable for parallel test
11/27/14Method for forming dual sti structure
11/20/14Method of manufacturing dual gate oxide devices
11/13/14Test module device and a test monitoring the stability of processes
11/13/14Cmos charge pump circuit
10/09/14Plasma cleaning method
10/09/14Method for inhibiting the electric crosstalk of back illuminated cmos image sensor
10/09/14Method of forming ultra shallow junction
10/09/14Method of manufacturing semiconductor device
09/18/14Method of depositing the metal barrier layer comprising silicon dioxide
09/18/14Method of manufacturing the trench of u-shape
09/18/14Method of forming dual gate oxide
06/05/14Apparatus for detecting the flatness of wafer and the method thereof
05/29/14Photodiode for an image sensor and fabricating the same
05/29/14Method of forming gate structure
05/15/14Method of forming contact hole
05/08/14Forming an annular storage unit of a magneto-resistive memory
05/08/14Method of detecting the circular uniformity of the semiconductor circular contact holes
04/17/14Mim capacitor and fabrication method thereof
04/17/14Method for etching polysilicon gate
03/20/14Dummy wafer structure and forming the same
01/09/14Measurement of lateral diffusion of implanted ions in doped well region of semiconductor devices
12/26/13Method of fabricating nmos devices
11/28/13Sonos structure, manufacturing method thereof and semiconductor with the same structure
11/28/13Method which can form contact holes in wafer of semiconductor
11/28/13Method of manufacturing a tungsten plug
11/28/13Method for reducing morphological difference between n-doped and undoped polysilicon gates after etching
10/17/13Method of forming connection holes
10/03/13Method for improving write margins of sram cells
08/29/13Method of forming nitrogen-free dielectric anti-reflection layer
08/29/13Fabrication improving surface planarity after tungsten chemical mechanical polishing
08/29/13Algorithm of cu interconnect dummy inserting
07/18/13Sonos structure and manufacturing method thereof
07/18/13Method for depositing phosphosilicate glass
05/30/13Phase shift focus monitor reticle, manufacturing method thereof and monitoring focus difference
05/30/13Method for monitoring devices in semiconductor process
05/30/13Semiconductor yield management system
05/30/13Method and model for monitoring pretreatment process of low-k block layer
05/23/13Temperature balancing device of projection objective of lithography machine and method thereof
05/02/13Method of forming semiconductor devices using smt
04/25/13Method for producing silicon nanowire devices
04/04/13Treatment reducing particles in dual damascene silicon nitride process
03/28/13Method for fabricating copper interconnections in an ultra low dielectric constant film
Patent Packs
03/14/13Process for eliminating fog particles on a surface of high p concentration psg film
03/14/13Method for decreasing polysilicon gate resistance in a carbon co-implantation process
03/14/13Method for preparing spacer to reduce coupling interference in mosfet
03/14/13Method of making optical proximity correction to original gate photomask pattern based on different substrate areas
02/28/13Multi-working voltages cmos device with single gate oxide layer thickness and manufacturing method thereof
02/07/13Method for reducing a minimum line width in a spacer-defined double patterning process
01/24/13Method for suppressing short channel effect of cmos device
12/20/12Method for improving capacitance uniformity in a mim device
12/20/12Manufacturing a high performance metal-oxide-metal
11/29/12Method for preparing a shallow trench isolation structure with the stress of its isolation oxide being tuned by ion implantation
11/01/12Method for adjusting metal polishing rate and reducing defects arisen in a polishing process

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Shanghai Huali Microelectronics Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Shanghai Huali Microelectronics Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by