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Shanghai Institute Of Microsystem And Information Technology Chinese Academy
Shanghai Institute Of Microsystem And Information Technology Chinese Academy Of Sciences
Shanghai Institute Of Microsystem And Information Technology Chinese Academy Of Science
Shanghai Institute Of Microsystem And Information Technology Chinese Academy Sciences
  

Shanghai Institute Of Microsystem And Information Technology Chinese Academy patents

Recent patent applications related to Shanghai Institute Of Microsystem And Information Technology Chinese Academy. Shanghai Institute Of Microsystem And Information Technology Chinese Academy is listed as an Agent/Assignee. Note: Shanghai Institute Of Microsystem And Information Technology Chinese Academy may have other listings under different names/spellings. We're not affiliated with Shanghai Institute Of Microsystem And Information Technology Chinese Academy, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Shanghai Institute Of Microsystem And Information Technology Chinese Academy-related inventors




Date Shanghai Institute Of Microsystem And Information Technology Chinese Academy patents (updated weekly) - BOOKMARK this page
09/08/16Photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereof
08/06/15Phase-change storage unit containing tisin material layer and preparing the same
07/23/15Antimony-rich high-speed phase-change material used in phase-change memory, preparing method, and application thereof
04/30/15Variable area capacitive lateral acceleration sensor and preparation method thereof
01/22/15Monolithic integrated lattice mismatched crystal template and preparation method thereof
10/02/14High-speed, high-density, and low-power consumption phase-change memory unit, and preparation method thereof
07/10/14Sb-te-ti phase-change memory material and ti-sb2te3 phase-change memory material
01/30/14Three-dimensional thermoelectric energy harvester and fabrication method thereof
01/02/14Method for preparing goi chip structure
03/21/13Preparation full-isolated soi with hybrid crystal orientations
01/31/13Method of fabricating high-mobility dual channel material based on soi substrate
01/24/13Method for preparing graphene nanoribbon on insulating substrate
11/01/12Method of fabricating graphene-based field effect transistor
05/10/12Esd protection devices for soi integrated circuit and manufacturing method thereof
03/08/12Method of fabricating soi super-junction ldmos structure capable of completely eliminating substrate-assisted depletion effects
03/01/12A dram cell structure with extended trench and a manufacturing method thereof
02/02/12Mos device for eliminating floating body effects and self-heating effects
01/26/12Mos device for eliminating floating body effects and self-heating effects
01/19/12Soi mos device having bts structure and manufacturing method thereof
01/12/12Method for fabricating soi high voltage power chip with trenches
01/12/12Soi mos device having a source/body ohmic contact and manufacturing method thereof
12/01/11Dram cell utilizing floating body effect and manufacturing method thereof
12/01/11Mos structure with suppressed soi floating body effect and manufacturing method thereof
12/01/11Copper interconnection structure with mim capacitor and a manufacturing method thereof
10/20/11Gate-all-around cmosfet devices
10/20/11Hybrid material accumulation mode gaa cmosfet
10/20/11Hybrid material accumulation mode gaa cmosfet
10/20/11Hybrid material inversion mode gaa cmosfet
10/20/11Hybrid orientation inversion mode gaa cmosfet
09/15/11Mos-type esd protection device in soi and manufacturing method thereof
12/29/11Soi cmos device having vertical gate structure
05/11/17Local carbon-supply device and preparing wafer-level graphene single crystal by local carbon supply
04/13/17Ultrahigh resolution magnetic resonance imaging method and apparatus
04/06/17Method and device for reducing extrinsic dark count of nanowire single photon detector
03/23/17Nano-scale superconducting quantum interference device and manufacturing method thereof
03/02/17Sulfur doping graphene
09/08/16Photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereof
09/08/16Preparation graphene nanoribbon on h-bn
06/16/16Image type electron spin polarimeter
04/07/16Sb-te-ti phase-change memory material and ti-sb2te3 phase-change memory material
01/07/16Manufacturing graphene modulated high-k oxide and metal gate mos device
11/12/15Method for preparing material on insulator based on enhanced adsorption
07/09/15Method for preparing ultra-thin material on insulator through adsorption by doped ultra-thin layer
07/02/15Phase-change storage unit for replacing dram and flash and manufacturing method thereof
03/19/15Capacitive acceleration sensor with an h-shaped beam and preparation method thereof
03/19/15Capacitive acceleration sensor with a bending elastic beam and preparation method thereof
07/17/14Silicon-germanium heterojunction tunnel field effect transistor and preparation method thereof
03/14/13Soi semiconductor structure with a hybrid of coplanar germanium and iii-v, and preparation method thereof
02/28/13Method for determining bsimsoi4 dc model parameters
05/24/12Method of nisige epitaxial growth by introducing al interlayer
01/26/12Manufacturing soi high-voltage power device
10/13/11Hybrid material inversion mode gaa cmosfet
04/02/15Phase change memory and fabrication method







ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009



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