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Sii Semiconductor Corporation patents


Recent patent applications related to Sii Semiconductor Corporation. Sii Semiconductor Corporation is listed as an Agent/Assignee. Note: Sii Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Sii Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Sii Semiconductor Corporation-related inventors


Polishing head, cmp apparatus including a polishing head, and manufacturing semiconductor integrated circuit device using a cmp apparatus

In a polishing head for a CMP apparatus, a stress distributing plate made of metal or ceramic is placed between a wafer on a polishing pad and an air bag configured to press down the wafer, and a shock absorbing sheet is provided between the stress distributing plate and the... Sii Semiconductor Corporation

Semiconductor device

A slit is formed along a coupling portion at which a second interconnect is connected to a relatively large area interconnect or pad. Since tensile stress of a resist that is caused due to baking, UV curing, or other treatments in photolithography can be dispersed, contraction and deformation of the... Sii Semiconductor Corporation

Method of manufacturing a semiconductor device

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region... Sii Semiconductor Corporation

Voltage regulator

Provided is a voltage regulator capable of stably generating a constant output voltage even in a high temperature environment. The voltage regulator includes: an output transistor; an output terminal connected to a drain of the output transistor and outputting an output voltage; an error amplifier circuit configured to supply a... Sii Semiconductor Corporation

Charge/discharge control circuit and battery device including the same

Provided is a charge/discharge control circuit for controlling charging and discharging of a secondary cell. The charge/discharge control circuit includes a positive power supply terminal and a negative power supply terminal configured to monitor a voltage of the secondary cell, a charge control signal output terminal from which a charge... Sii Semiconductor Corporation

Booster circuit

Provided is a booster circuit enabling improvement of efficiency of a stress test for a circuit to which a boosted voltage is applied. A voltage divider circuit is configured to have a voltage-dividing ratio that is variable depending on a test signal, and a limiter circuit is configured to clamp... Sii Semiconductor Corporation

Reticle transmittance measurement method, projection exposure method using the same, and projection exposure device

When a reticle is first used, the reticle is loaded in a projection exposure device and measured by either oblique measurement or random measurement, thereby avoiding the fear of uneven sampling and determining the reticle transmittance of the entire reticle as the parent population, without increasing the sampling count. The... Sii Semiconductor Corporation

Amplifier circuit and multipath nested miller amplifier circuit

Provided are an amplifier circuit capable of reducing DC offset voltage without an increase in chip area and degradation in frequency characteristics, and a multipath nested miller amplifier circuit. The amplifier circuit includes a chopper switching circuit, a sampling circuit configured to sample an output signal from the chopper switching... Sii Semiconductor Corporation

Zero-crossing detection circuit and sensor device

Provided is a zero-crossing detection circuit capable of detecting zero-crossing with high accuracy without being influenced by noise. The zero-crossing detection circuit includes a first comparison circuit, a second comparison circuit having a hysteresis function, and a logic circuit. The first comparison circuit is configured to output a zero-crossing detection... Sii Semiconductor Corporation

Semiconductor device

A semiconductor device includes a power element and a heat sensing element configured to detect a temperature of the power element. The power element includes lateral MOS transistors having drains and gate electrodes, two of the drains being shorter in length than the remaining drains and two of the gate... Sii Semiconductor Corporation

Dc-dc converter

The DC-DC converter includes: a switching element connected between an inductor and a power supply terminal; a pseudo ripple generation circuit configured to generate a pseudo ripple voltage depending on a ripple component that is generated in the output voltage, and a smoothed voltage by smoothing the pseudo ripple voltage;... Sii Semiconductor Corporation

Dc-dc converter

There is provided a DC-DC converter which is safe and secure, but yet with low power consumption. The DC-DC converter is configured to monitor the output voltage of an error amplifier, and detect that the output voltage of the error amplifier becomes a fixed value or smaller to drive an... Sii Semiconductor Corporation

Dc-dc converter

There is provided a DC-DC converter which is safe and secure, but yet with low power consumption. The DC-DC converter is configured such that an overcurrent protection circuit is operated intermittently only for a predetermined period of time based on a signal output from an output control circuit to turn... Sii Semiconductor Corporation

Bandgap reference circuit and dcdc converter having the same

To provide a bandgap reference circuit capable of shortening a start time at power-on in a circuit lowered in power consumption. There is provided a bandgap reference circuit using an op amplifier to generate a reference voltage, which is equipped with a first current source connected between a power supply... Sii Semiconductor Corporation

Reference voltage generation circuit and dcdc converter having the same

A reference voltage generation circuit includes a bandgap reference circuit, a first resistive element and a second resistive element connected in series between the output node and a ground terminal, a third resistive element, a fourth resistive element, and a first switch connected in series between the output node and... Sii Semiconductor Corporation

Magnetic sensor and manufacturing the same

Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die... Sii Semiconductor Corporation

Semiconductor device and manufacturing a semiconductor device

In a semiconductor device that uses an N-channel MOS transistor as an electrostatic protection element, the N-channel MOS transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an N-type high concentration drain region downward, and three... Sii Semiconductor Corporation

Current detection circuit

To provide a current detection circuit capable of detecting with low current consumption that a prescribed current flows into a current measuring resistor. A current detection circuit is equipped with a reference voltage circuit which has two NMOS transistors having different threshold voltages and a resistor, and generates a reference... Sii Semiconductor Corporation

Voltage regulator

To provide a voltage regulator which is capable of testing a phase compensation capacitor without impairing stability as a regulator and prevents a chip area from being increased. A voltage regulator is configured to be equipped with a phase compensation capacitance test circuit for a phase compensation circuit and a... Sii Semiconductor Corporation

Level shift circuit

Provided is a level shift circuit capable of avoiding breakdown due to level shift operation. The level shift circuit includes: a floating power supply having one end connected to an output terminal; a circuit configured to receive a voltage of the floating power supply, a voltage of a low level... Sii Semiconductor Corporation

Magnetic sensor and manufacturing the same

The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the... Sii Semiconductor Corporation

Voltage regulator

Provided is a voltage regulator capable of suppressing fluctuation in a limited current. The voltage regulator includes: a first differential amplifier circuit configured to compare a voltage based on an output voltage and a reference voltage to each other, to thereby output a first voltage; a second differential amplifier circuit... Sii Semiconductor Corporation

Semiconductor device including an esd protection element

A semiconductor device includes an off transistor using an NMOS as an ESD protection element that has N-type drain region (102), and P-type drain region (103) in a drain active region (105) . The P-type drain region (103) has a potential same as a potential of a P well or... Sii Semiconductor Corporation

Semiconductor device and manufacturing the same

A semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. At... Sii Semiconductor Corporation

Semiconductor device and manufacturing the same

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of Hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical-cross section of... Sii Semiconductor Corporation

Semiconductor device and manufacturing the same

Provided is a semiconductor device including a second conductivity type low-concentration diffusion layer (101) for an electric field relaxation reaching a lower portion of a gate oxide film so as to cover a drain diffusion layer (107), in which a second conductivity type medium-concentration diffusion layer (102) is formed within... Sii Semiconductor Corporation

Magnetic sensor and manufacturing the same

The magnetic sensor includes a semiconductor substrate having Hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the... Sii Semiconductor Corporation

Switching regulator

To provide a switching regulator equipped with a power supply monitoring circuit small in current consumption. A switching regulator is configured to intermittently operate a power supply monitoring circuit only for a prescribed period based on a signal turning on a switching element, which is outputted from an output control... Sii Semiconductor Corporation

Switching regulator

To provide a switching regulator equipped with an on-time control circuit small in power consumption. An on-time control circuit is configured to be equipped with switches each turned on/off by a signal controlling on and off of a switching element and be turned off during an off-time of the switching... Sii Semiconductor Corporation

Oscillation circuit, booster circuit, and semiconductor device

Provided are an oscillation circuit, a booster circuit, and a semiconductor device capable of reducing power consumption when a power supply voltage is high. In a ring oscillator circuit which is the oscillation circuit, a PMOS transistor in each of inverter circuits has a substrate connected to a first power... Sii Semiconductor Corporation

Magnetic sensor and magnetic sensor device

Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output... Sii Semiconductor Corporation

Resin-encapsulated semiconductor device

A first resin encapsulated body and a second resin encapsulated body are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body includes: a first semiconductor element; an external terminal; inner wiring; and a first resin for covering those components, at least a rear surface of the external... Sii Semiconductor Corporation

Switching regulator

To provide a switching regulator equipped with an overheat protection circuit small in current consumption. A switching regulator of the present invention is configured to intermittently operate an overheat protection circuit only for a prescribed period based on a signal turning on a switching element, which is outputted from an... Sii Semiconductor Corporation

Output circuit

The output circuit includes: a control voltage generating circuit configured to generate a control voltage; a first MOS transistor having a gate for receiving the control voltage; a second MOS transistor having a gate to which a first input signal is input; a third MOS transistor having a gate to... Sii Semiconductor Corporation

Method of manufacturing semiconductor integrated circuit device

Provided is a semiconductor integrated circuit device including a first N-channel type high withstanding-voltage MOS transistor and a second N-channel type high withstanding-voltage MOS transistor formed on an N-type semiconductor substrate, the first N-channel type high withstanding-voltage transistor including a third N-type low-concentration impurity region containing arsenic having a depth... Sii Semiconductor Corporation

09/07/17 / #20170256579

Semiconductor device having a light receiving element

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an SOI layer of single... Sii Semiconductor Corporation

09/07/17 / #20170256582

Semiconductor device and a manufacturing a semiconductor device

In order to form a light receiving element having high reliability and a MOS transistor together on the same silicon substrate, after forming a gate electrode of the MOS transistor, a gate oxide film in a light receiving element forming region is removed. Then, a thermal oxide film is newly... Sii Semiconductor Corporation

09/07/17 / #20170256658

Optical sensor device

A package for an optical sensor device has a double-molded structure in which a first resin molded portion and a second resin molded portion are integrated. The first resin molded portion has a structure in which peripheries of a die pad portion on which an optical sensor element is mounted... Sii Semiconductor Corporation

09/07/17 / #20170257028

Switching regulator

To operate a plurality of abnormality detecting functions of a switching regulator with low power consumption and configure an occupied area of a semiconductor device to be reduced. A switching regulator is configured to be equipped with a comparison circuit, switch circuits, and a switch control circuit and to switch... Sii Semiconductor Corporation

09/07/17 / #20170257161

Digital radio transmitter

There is provided a digital radio transmitter capable of meeting a legal standard even if unwanted emissions resulting from a switching frequency of a switching power supply occur in transmission waves. The digital radio transmitter includes: a switching power supply that determines a switching frequency by a synchronization signal of... Sii Semiconductor Corporation

08/31/17 / #20170250136

Semiconductor device

Provided is a semiconductor device in which a fuse element, which is cuttable by a laser, can be stably cut. The fuse element includes an upper fuse element, a lower fuse wiring line, and a fuse connecting contact such that, in cutting the fuse element by a laser, the lower... Sii Semiconductor Corporation

08/31/17 / #20170250606

Switching regulator

Provided is a switching regulator configured to suppress noise coupling, which may occur when a comparator is switched between a normal current operation and a low current consumption operation, to thereby operate stably. The switching regulator has a configuration in which switches are connected to input terminals of the comparator,... Sii Semiconductor Corporation

08/31/17 / #20170250661

Switched-capacitor input circuit, switched-capacitor amplifier, and switched-capacitor voltage comparator

In order to realize a circuit in a subsequent stage with a smaller circuit scale with respect to a single-ended input of a large signal, a double-sampling switched-capacitor input circuit includes a first switched-capacitor input circuit, which includes first capacitors for double sampling, and a second switched-capacitor input circuit, which... Sii Semiconductor Corporation

08/24/17 / #20170244320

Switching regulator

To provide a COT-controlled switching regulator capable of preventing an output voltage from excessively exceeding a desired voltage even though a light load is connected to an output terminal. A switching regulator of the present invention is configured to be equipped with a 100% DUTY detection circuit which detects a... Sii Semiconductor Corporation

08/17/17 / #20170237350

Dc-dc converter

To provide a synchronous rectification type DC-DC converter equipped with a protection circuit operated stably. There is provided a DC-DC converter equipped with a detection circuit which detects that electrical energy accumulated in an inductor is lost, or a timer circuit which counts a prescribed time after the protection circuit... Sii Semiconductor Corporation

08/10/17 / #20170229355

Method of manufacturing semiconductor device having semiconductor chip mounted on lead frame

A semiconductor device uses a lead frame, in which an outer lead is electrically connected to an inner lead suspension lead via an inner lead. An encapsulating resin covers the inner lead and part of the outer lead, and a plated film is formed on an outer lead cut surface... Sii Semiconductor Corporation

08/10/17 / #20170229958

Switching regulator

To provide a switching regulator reduced in current consumption without sacrificing efficiency. There is provided a switching regulator equipped with a timer circuit and configured to reduce an operation current of a comparator by the timer circuit in a light load mode.... Sii Semiconductor Corporation

08/03/17 / #20170221804

Resin-encapsulated semiconductor device

Provided is a resin-encapsulated semiconductor device in which heat dissipation characteristic and mounting strength to a substrate are improved. Heat dissipation outer leads connected to inner leads connected to the four corners of a die pad are exposed to the outside of an encapsulating resin to improve the heat dissipation... Sii Semiconductor Corporation

08/03/17 / #20170221824

Semiconductor device

Provided is a semiconductor device preventing readhesion of conductive body which forms fuse elements and breakage of the fuse elements. The semiconductor device includes a first insulating film formed on a semiconductor substrate, a plurality of fuse elements formed on the first insulating film adjacent to one another, a protective... Sii Semiconductor Corporation

08/03/17 / #20170221878

Semiconductor device having esd element

When an ESD element is operated, for the purpose of suppressing heat generation and causing uniform current to flow through all channels of all transistors included in the ESD element, various substrate potentials existing in the transistors and the channels of a multi finger type ESD element are electrically connected... Sii Semiconductor Corporation

08/03/17 / #20170222548

Voltage-current conversion circuit and switching regulator including the same

Provided are a switching regulator and a voltage-current conversion circuit configured to shorten a start-up period. The voltage-current conversion circuit includes: a first MOS transistor of a first conductivity type including a gate and a drain connected in common, and a source connected to a first power supply terminal; a... Sii Semiconductor Corporation

07/27/17 / #20170213775

Semiconductor device

Provided is a semiconductor device in which an internal pressure change in a cavity structure can be inspected. A semiconductor device (1), which is formed of a cavity-type package having a space in an inner part thereof, includes a pressure gauge (2), which enables inspection of a state of an... Sii Semiconductor Corporation

07/20/17 / #20170205842

Voltage regulator

Provided is a voltage regulator configured to stably operate with low current consumption, and having good responsiveness. A delay circuit is provided between a transient response improvement circuit and a voltage amplifier circuit.... Sii Semiconductor Corporation

07/20/17 / #20170205843

Voltage regulator

A safe and low-cost voltage regulator is provided through simplification of a circuit configuration of a protection circuit. The voltage regulator has a configuration in which current output of the protection circuit, which serves as a signal indicating that the protection circuit has started to operate, is input to a... Sii Semiconductor Corporation

07/13/17 / #20170199252

Hall sensor

A Hall sensor includes a Hall element and a heat source element in a circuit configured to drive the semiconductor Hall element, and capable of eliminating an offset voltage without increasing a chip size. In the Hall sensor, a Hall element control current flowing between one pair of terminals out... Sii Semiconductor Corporation

06/29/17 / #20170187330

Differential amplifier circuit

Provided is a differential amplifier circuit having a low current consumption and a small circuit area. The differential amplifier circuit is formed as a drain grounding circuit (source follower circuit), which includes two stages of output transistors that are connected to two stages of amplifier circuits in series, and is... Sii Semiconductor Corporation

06/29/17 / #20170187362

Clock selection circuit and power supply device equipped with the same

To provide a clock selection circuit capable of reducing clock omission generated when switching from a state of being synchronized with a first clock to a second clock. The clock selection circuit is equipped with a clock detection circuit which detects a first clock to output a detected signal, a... Sii Semiconductor Corporation

06/22/17 / #20170179812

Soft start circuit and power supply device equipped therewith

To provide a soft start circuit capable of obtaining a high-accuracy soft start time. The soft start circuit is equipped with a constant current source, an output terminal which outputs a soft start voltage, a ground terminal, a first transistor which is connected between the constant current source and the... Sii Semiconductor Corporation

06/15/17 / #20170170730

Amplifier circuit and voltage regulator

Provided are an amplifier circuit capable of improving phase characteristics, and a voltage regulator including the amplifier circuit. The amplifier circuit is configured to amplify an input voltage and to output the input voltage, and includes a current source, a first transistor having a gate to which the input voltage... Sii Semiconductor Corporation

06/08/17 / #20170160764

Voltage regulator

The voltage regulator includes an overheat protection circuit. The overheat protection circuit includes: a temperature sensing circuit; a voltage difference sensing circuit configured to output a current depending on a voltage difference between a power source voltage to be supplied to a power supply terminal and the output voltage; an... Sii Semiconductor Corporation

06/08/17 / #20170162588

Semiconductor nonvolatile memory element and manufacturing method thereof

A semiconductor nonvolatile memory element is used to form a constant current source in a semiconductor integrated circuit device. The semiconductor nonvolatile memory element includes a control gate electrode, a floating gate electrode, source/drain terminals, a thin first gate insulating film, and a second gate insulating film that is thick... Sii Semiconductor Corporation

06/01/17 / #20170150946

Transmission circuit for ultrasonic diagnosis and transmitting ultrasonic wave

A transmission circuit for ultrasonic diagnosis includes a delay processing circuit that delays a transmission signal pattern and an operational circuit that calculates a delay time. A transmission timing for supplying the transmission signal pattern to a plurality of piezo electric elements corresponding to a plurality of channels is approximated... Sii Semiconductor Corporation

06/01/17 / #20170155255

Charging/discharging control circuit and battery apparatus

To provide a charging/discharging control circuit and a battery apparatus which control charging/discharging of secondary batteries connected in parallel and are high in safety while being low in cost. A charging/discharging control circuit and a battery apparatus are each configured to be provided with a voltage detection portion which detects... Sii Semiconductor Corporation

05/11/17 / #20170131155

Overheat detection circuit, overheat protection circuit, and semiconductor device

Provided is an overheat detection circuit capable of easily adjusting a detection temperature of the overheat detection circuit. The overheat detection circuit includes: a first resistor; a second resistor, which has the same temperature characteristics with the first resistor, and has an adjustable resistance value; and a heat sensitive element... Sii Semiconductor Corporation

05/11/17 / #20170134029

Oscillation circuit device

To provide an oscillation circuit device capable of when detecting an input reference signal and making a transition from a self-running state to a PLL operation, suppressing a fluctuation in the frequency of an output signal CLK to thereby obtain a smoothly-synchronized and stable output signal CLK. There is provided... Sii Semiconductor Corporation

Patent Packs
05/04/17 / #20170122997

Semiconductor device and inspecting a semiconductor device

Provided is a semiconductor device including a MOS analog circuit which has a high reliability and a low manufacturing cost, and in which latent failure is easily detected. The MOS analog circuit is switched to a test state or an operating state based on a control signal that is externally... Sii Semiconductor Corporation

04/13/17 / #20170103804

Nonvolatile memory device

There is provided a nonvolatile memory device having a writing error preventing function with high noise resistance. This structure includes a switch and a noise filter circuit connected in parallel to a clock terminal, wherein a clock pulse monitoring circuit compares the number of clocks input from the clock terminal... Sii Semiconductor Corporation

03/30/17 / #20170090496

Voltage regulator

The voltage regulator includes a reference voltage circuit configured to feed back the reference voltage as a feedback voltage and to output the reference voltage, a soft-start circuit configured to output a control signal for controlling the reference voltage to rise linearly at a start of power supply, a voltage... Sii Semiconductor Corporation

03/30/17 / #20170092512

Semiconductor-substrate processing apparatus, stripping a photoresist, and manufacturing a semiconductor device

Provided is a method of reducing resist residue on a semiconductor substrate surface in a step of performing resist stripping, by introducing ozone gas into a chemical solution. Circulation lines are arranged for a tank (12) for performing processing on the semiconductor substrate (1), and two circulation pumps (131, 132)... Sii Semiconductor Corporation

03/30/17 / #20170093334

Oscillation circuit

Provided is an oscillation circuit that can limit a maximum value and a minimum value of a frequency even when some troubles are caused in a V/I conversion circuit. The oscillation circuit includes a current controlled oscillator configured to oscillate based on an input current, and a current limiting circuit... Sii Semiconductor Corporation

03/30/17 / #20170093354

Receiver and communication system

There is provides a single conversion receiver and a communication system having wide occupied frequency bands and good receiving sensitivity. The single conversion receiver includes: a first bandpass filter that lets only a desired band of a received RF signal pass through; a first mixer that converts the RF signal... Sii Semiconductor Corporation

03/30/17 / #20170093378

Input circuit

To provide an input circuit which avoids power supply voltage dependency of a threshold of the input circuit when an output signal is transited. There is provided an input circuit equipped with an input transistor and a current source connected in series between a first power supply and a second... Sii Semiconductor Corporation

03/23/17 / #20170084547

Semiconductor device, lead frame, and manufacturing lead frame

Provided is a lead frame that may prevent resin cracks from occurring in a semiconductor device. When a lead frame (3) is formed through press working, punching burrs (3d) are formed on tips of inner leads (3b) to serve as anchors with respect to a resin (5). The punching burrs... Sii Semiconductor Corporation

03/16/17 / #20170077309

Semiconductor memory device and manufacturing the same

Provided is a semiconductor device, which prevents unnecessary voltage drop in a MOS transistor that is connected in series in a location between a booster circuit and a memory main body portion, to thereby operate on a low voltage and improve the ON/OFF ratio so that chip size shrinking and... Sii Semiconductor Corporation

02/16/17 / #20170047836

Voltage regulator

To provide a voltage regulator equipped with an overcurrent protection circuit which needs not to separately adjust a limited current and a short-circuited current and is capable of collectively adjusting them. There is provided an overcurrent protection circuit equipped with an output current limitation circuit which distributes a current supplied... Sii Semiconductor Corporation

02/09/17 / #20170036318

Polishing head, cmp apparatus having polishing head, and semiconductor integrated circuit manufacturing method using cmp apparatus

Provided is a polishing head of a CMP apparatus that is improved in the evenness of polishing. The polishing head includes a polishing pad, an air bag brought into contact with a rear surface of a wafer on the polishing pad and is configured to press a front surface of... Sii Semiconductor Corporation

02/09/17 / #20170040186

Semiconductor device and manufacturing the same

Provided is a method of manufacturing a semiconductor device with sufficient heat dissipation property, in which a mold configured to mold an island for mounting a semiconductor chip thereon includes an inner punch (10), punch guides (11), and outer punches (12), and in which a recessed portion (14), protruding walls... Sii Semiconductor Corporation

01/26/17 / #20170023960

Voltage regulator

Provided is a voltage regulator which is not affected by a variation in output impedance of a reference voltage circuit, that is, which is configured to output voltage with a small change due to temperature. Two reference voltages respectively having positive and negative temperature coefficients are added together through transconductance... Sii Semiconductor Corporation

01/26/17 / #20170025320

Resin-encapsulatd semiconductor device and manufacturing the same

A first resin encapsulated body (25) and a second resin encapsulated body (26) are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body (25) includes: a first semiconductor element (2); an external terminal (5); inner wiring (4); and a first resin (6) for covering those components, at... Sii Semiconductor Corporation

01/05/17 / #20170003327

Battery monitoring system

Provided is a battery monitoring system that has a high level of safety even under a state in which characteristics of a reference voltage circuit are deteriorated. The battery monitoring system has a configuration in which: a reference voltage of a first battery monitoring IC is monitored by a second... Sii Semiconductor Corporation

Patent Packs
01/05/17 / #20170005024

Semiconductor device

Provided is a semiconductor device that includes a passivation film thinner than a wiring layer and has a high resistance to a stress caused during bonding. In the semiconductor device, a wiring layer (303) is formed in the vicinity of a bonding pad (301) via a gap (601), a passivation... Sii Semiconductor Corporation

01/05/17 / #20170005174

Method of manufacturing a semiconductor device

Provided is a method of manufacturing a semiconductor device, for suppressing channeling that may occur during ion implantation to a polycrystalline silicon layer (4), the method including: exposing, in an opening portion formed in a second photoresist layer (8), a first photoresist layer (5) that has been used for patterning... Sii Semiconductor Corporation

01/05/17 / #20170005490

Charging/discharging control circuit, charging/discharging control device, and battery apparatus

To suppress an increase in the number of components in a charging/discharging control device and a battery apparatus which perform charging/discharging of a plurality of secondary batteries connected in series. A first charging/discharging control circuit receives an overdischarge signal generated based on the turning OFF of a discharging control switch... Sii Semiconductor Corporation

01/05/17 / #20170005508

Electronic device

An electronic device includes: a light detection circuit having a first light sensor and a second light sensor each generating a photocurrent by photoelectric conversion, a resistive element which allows a difference between the photocurrents generated by the first light sensor and the second light sensor to flow, and a... Sii Semiconductor Corporation








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