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Sii Semiconductor Corporation patents


Recent patent applications related to Sii Semiconductor Corporation. Sii Semiconductor Corporation is listed as an Agent/Assignee. Note: Sii Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Sii Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Sii Semiconductor Corporation-related inventors


 new patent  Secondary battery monitoring device and method for diagnosing failure

A secondary battery monitoring device is equipped with a resistance circuit and a detection circuit detecting an abnormality of a secondary battery, a current generation circuit generating a failure detection circuit for setting an output terminal of the resistance circuit to a failure diagnosis voltage, and a switch which permits the failure detection circuit to flow to the output terminal of the resistance circuit by switching. Further, a method for diagnosing failure of the secondary battery monitoring device is provided.. ... Sii Semiconductor Corporation

 new patent  Voltage abnormality detection circuit and semiconductor device

In order to provide a voltage abnormality detection circuit and a semiconductor device which are capable of detecting a voltage abnormality in an internal power supply voltage of the semiconductor device with a simple circuit configuration, the voltage abnormality detection circuit includes: a reference voltage circuit configured to output a first reference voltage, which is higher than the internal power supply voltage, and a second reference voltage, which is lower than the internal power supply voltage; a first voltage detection circuit configured to detect that the internal power supply voltage has exceeded a desired voltage value, with the use of the first reference voltage; and a second voltage detection circuit configured to detect that the internal power supply voltage has dropped lower than the desired voltage value, with the use of the second reference voltage.. . ... Sii Semiconductor Corporation

Method of manufacturing a semiconductor device

Provided is a method of manufacturing a semiconductor device with which a trench shape having vertical, flat, and smooth side wall surfaces can be formed even at room temperature. A semiconductor substrate is placed on a sample stage which is kept at room temperature in a reaction container. ... Sii Semiconductor Corporation

Semiconductor device

A vertical hall element having an improved sensitivity and reduced offset voltage includes: a second conductivity type semiconductor layer formed on a semiconductor substrate and having an impurity concentration that is distributed uniformly; a second conductivity type impurity diffusion layer formed on the semiconductor layer and having a concentration higher than in the semiconductor layer; a plurality of electrodes formed in a straight line on a surface of the impurity diffusion layer, and each formed from a second conductivity type impurity region that is higher in concentration than the impurity diffusion layer; and a plurality of first conductivity type electrode isolation diffusion layers each formed between two electrodes out of the plurality of electrodes on the surface of the impurity diffusion layer, to isolate the plurality of electrodes from one another.. . ... Sii Semiconductor Corporation

Semiconductor device having semiconductor chip with large and small irregularities on upper and lower side surface portions thereof

A semiconductor device has a semiconductor chip adhesively bonded to a die pad. An area having large irregularities is formed on an upper side surface of the semiconductor chip to be covered by an encapsulating resin, and an area having small irregularities is formed on a lower side surface of the semiconductor chip, thereby improving adhesive strength between the semiconductor chip and the encapsulating resin and preventing penetration of moisture from outside.. ... Sii Semiconductor Corporation

Booster circuit and non-volatile memory including the same

To obtain a booster circuit capable of reducing voltage stress applied to a booster cell, provided is a booster circuit including a plurality of booster cells connected in series. Each of the plurality of booster cells includes a charge transfer transistor connected between an input terminal and an output terminal, and a boost capacitor connected between the input terminal and a clock terminal. ... Sii Semiconductor Corporation

Voltage regulator

A voltage regulator includes an output transistor controlled by an error amplifier, first and second resistors connected in series between an output terminal and a ground terminal via a first node, third and fourth resistors connected in series between a load voltage monitoring terminal and the ground terminal via a second node, and a fifth resistor and a switching transistor connected in series between the first node and the ground terminal. When a voltage which is supplied to a load connected to the output terminal drops due to a parasitic resistance, a voltage at the second node falls below that of the first node. ... Sii Semiconductor Corporation

Semiconductor device

In an esd protection element configured to protect a semiconductor device, a first n-type low concentration diffusion layer is formed, as an offset layer for easing electric field concentration, under a locos oxide film formed at each end of the gate electrode, and a second n-type low concentration diffusion layer and a third low concentration diffusion layer are formed under an n-type high concentration diffusion layer on the drain side to set the point of breakdown at a level deep inside a substrate from a surface of the substrate. The hold voltage is thus raised to a voltage equal to or higher than the operating voltage and a noise can be relieved without increasing the element size of the esd protection element even when the noise having a large amount of positive electric charge is applied to a vdd supply terminal.. ... Sii Semiconductor Corporation

Non-volatile semiconductor memory device

Provided is a small-area one-time programmable semiconductor memory device that uses a pnpn structure, which is parasitically generated in a cmos process. An n-type region provided in a location other than both ends or a p-type region provided in a location other than both the ends is put into a floating state so that pnpn current flows, and a thermal breakdown of a resistor caused by this current is used as a memory element.. ... Sii Semiconductor Corporation

Method of manufacturing semiconductor integrated circuit device

A semiconductor integrated circuit device capable of stably forming a fuse element that is used to adjust the characteristics of the semiconductor integrated circuit device, and a method of manufacturing the semiconductor integrated circuit device are provided. The thickness of an interlayer insulating film above the fuse element is reduced by using an amorphous silicon layer that is formed by sputtering as a material of the fuse element, and by forming the amorphous silicon layer at the same time as metal wiring is formed. ... Sii Semiconductor Corporation

Semiconductor chip, semiconductor apparatus, semiconductor wafer, and semiconductor wafer dicing method

Provided are a semiconductor chip, a semiconductor apparatus, a semiconductor wafer, and a semiconductor wafer dicing method in which chipping is prevented while securing an effective region of the semiconductor chip to have a sufficient area. Each semiconductor chip region which becomes a semiconductor chip has a rectangular shape, and includes non-effective regions in which no circuit device is placed. ... Sii Semiconductor Corporation

Manufacturing method for semiconductor device

Provided is a manufacturing method for a semiconductor device using stamping press working which is capable of securing an island having substantially the same size as that of a related art even when a lead frame thickness is increased. A portion between the island and the inner lead is punched with a punch having a width of equal to or larger than a minimum required plate thickness for stamping press working. ... Sii Semiconductor Corporation

Semiconductor device

Provided is a semiconductor device which is testable even with an inspection apparatus having low current drivability, and includes an output terminal which is also used as a test terminal and an output driver having high current drivability. The semiconductor device includes a plurality of voltage determination circuits connected to the output terminal of the semiconductor device, and have threshold values that are different from each other, an encoding circuit connected to the plurality of voltage determination circuits, and configured to output an encoded signal, and a mode switching circuit configured to output a mode signal to an internal circuit depending on the encoded signal and a signal from the internal circuit.. ... Sii Semiconductor Corporation

Charge/discharge control circuit and battery device including the same

Provided are a charge/discharge control circuit capable of using an fet having a low withstand voltage. The charge/discharge control circuit is configured to control charging and discharging of a secondary cell, and includes: a positive power supply terminal and a negative power supply terminal for monitoring a voltage of the secondary cell; a charge control terminal configured to connect to a gate of a charge control fet, the charge control fet having one end connected to an external negative terminal to which a negative electrode of a load or a charger is connected; and a clamp circuit configured to clamp a signal at a high level for turning on the charge control fet to a voltage that is higher than a reference voltage by a predetermined voltage, the reference voltage being a voltage at the external negative terminal, the signal being output to the charge control terminal.. ... Sii Semiconductor Corporation

03/01/18 / #20180059193

Sensor circuit

Provided is a sensor circuit that has little possibility of being accidentally put into a test mode in response to an external input of noise or the like. The sensor circuit includes a clock generation circuit configured to output a control signal that is used to control intermittent operation to a physical quantity detection unit, and to output a sampling signal in a sleep period, a potential detection circuit configured to detect a potential at an output terminal and to output a detection signal, and a clock control circuit configured to output a mode switching signal that is a command to switch the clock generation circuit to a test mode, when a given signal pattern is detected in data that is obtained by sampling the detection signal based on the sampling signal.. ... Sii Semiconductor Corporation

02/22/18 / #20180054666

Microphone

Provided is a microphone which is capable of detecting a face or the like of the person and maintaining an on-state even when the face or the like of the person which has approached the microphone does not move. A power supply of the microphone turns on according to a reception of a reflected light of an emission from the first and/or second light-emitting element, which is arranged at a position around an outer periphery of the sound pickup portion of the microphone by the first and/or second light-receiving element, which is arranged at an another position around the outer periphery of the sound pickup portion of the microphone.. ... Sii Semiconductor Corporation

02/15/18 / #20180047858

Method of manufacturing a semiconductor device

Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal diffusion of a rapid temperature change, with the use of a high-speed temperature rising and falling apparatus without using ion implantation into the silicon substrate.. . ... Sii Semiconductor Corporation

02/15/18 / #20180047684

Semiconductor device

A slit is formed along a coupling portion at which a second interconnect is connected to a relatively large area interconnect or pad. Since tensile stress of a resist that is caused due to baking, uv curing, or other treatments in photolithography can be dispersed, contraction and deformation of the resist at an end of the second interconnect can be alleviated, and dimensions and shape of a interconnect, which is formed by etching, can be stabilized.. ... Sii Semiconductor Corporation

02/15/18 / #20180043496

Polishing head, cmp apparatus including a polishing head, and manufacturing method of semiconductor integrated circuit device using a cmp apparatus

In a polishing head for a cmp apparatus, a stress distributing plate made of metal or ceramic is placed between a wafer on a polishing pad and an air bag configured to press down the wafer, and a shock absorbing sheet is provided between the stress distributing plate and the underlying wafer, to thereby make pressure applied from the air bag to the wafer uniform.. . ... Sii Semiconductor Corporation

02/08/18 / #20180041056

Charge/discharge control circuit and battery device including the same

Provided is a charge/discharge control circuit for controlling charging and discharging of a secondary cell. The charge/discharge control circuit includes a positive power supply terminal and a negative power supply terminal configured to monitor a voltage of the secondary cell, a charge control signal output terminal from which a charge control signal is output, the charge control signal controlling stopping and allowing charging of the secondary cell, a discharge control signal output terminal, an overcurrent detection terminal, an overcurrent cancel terminal, an external voltage input terminal provided separately from the overcurrent cancel terminal, a discharge overcurrent detection circuit connected to the overcurrent detection terminal, to which a discharge overcurrent detection voltage is set, and a discharge overcurrent cancel circuit connected to the overcurrent cancel terminal, to which a discharge overcurrent cancel voltage is set.. ... Sii Semiconductor Corporation

02/08/18 / #20180039296

Voltage regulator

Provided is a voltage regulator capable of stably generating a constant output voltage even in a high temperature environment. The voltage regulator includes: an output transistor; an output terminal connected to a drain of the output transistor and outputting an output voltage; an error amplifier circuit configured to supply a signal obtained by amplifying a difference between a divided voltage of the output voltage and a reference voltage to a gate of the output transistor; and an nmos transistor connected between the output terminal and a reference potential and configured to turn on, when the voltage regulator reaches a predetermined temperature at which a leakage current flowing in the output transistor is absorbed, to lead the leakage current to the reference potential.. ... Sii Semiconductor Corporation

12/28/17 / #20170373591

Booster circuit

Provided is a booster circuit enabling improvement of efficiency of a stress test for a circuit to which a boosted voltage is applied. A voltage divider circuit is configured to have a voltage-dividing ratio that is variable depending on a test signal, and a limiter circuit is configured to clamp a voltage to a voltage higher than a boosted voltage in normal operation. ... Sii Semiconductor Corporation

12/07/17 / #20170353166

Amplifier circuit and multipath nested miller amplifier circuit

Provided are an amplifier circuit capable of reducing dc offset voltage without an increase in chip area and degradation in frequency characteristics, and a multipath nested miller amplifier circuit. The amplifier circuit includes a chopper switching circuit, a sampling circuit configured to sample an output signal from the chopper switching circuit, and a holding circuit configured to hold a signal output from the sampling circuit.. ... Sii Semiconductor Corporation

12/07/17 / #20170351180

Reticle transmittance measurement method, projection exposure method using the same, and projection exposure device

When a reticle is first used, the reticle is loaded in a projection exposure device and measured by either oblique measurement or random measurement, thereby avoiding the fear of uneven sampling and determining the reticle transmittance of the entire reticle as the parent population, without increasing the sampling count. The same effect can be obtained by making the measurement spot size, which is fixed in general, variable and by changing the angle of incidence in relation to the measurement spot size.. ... Sii Semiconductor Corporation

11/23/17 / #20170336445

Zero-crossing detection circuit and sensor device

Provided is a zero-crossing detection circuit capable of detecting zero-crossing with high accuracy without being influenced by noise. The zero-crossing detection circuit includes a first comparison circuit, a second comparison circuit having a hysteresis function, and a logic circuit. ... Sii Semiconductor Corporation

11/09/17 / #20170323878

Semiconductor device

A semiconductor device includes a power element and a heat sensing element configured to detect a temperature of the power element. The power element includes lateral mos transistors having drains and gate electrodes, two of the drains being shorter in length than the remaining drains and two of the gate electrodes being shorter in length than the remaining gate electrodes. ... Sii Semiconductor Corporation

10/26/17 / #20170310214

Reference voltage generation circuit and dcdc converter having the same

A reference voltage generation circuit includes a bandgap reference circuit, a first resistive element and a second resistive element connected in series between the output node and a ground terminal, a third resistive element, a fourth resistive element, and a first switch connected in series between the output node and the ground terminal, and a second switch having one end connected to a connecting point of the first resistive element and the second resistive element, at which a reference voltage is generated, and the other end connected to a connecting point of the third resistive element and the fourth resistive element. A ratio between resistance values of the first resistive element and the second resistive element is equal to a ratio between resistance values of the third resistive element and the fourth resistive element. ... Sii Semiconductor Corporation

10/26/17 / #20170310204

Bandgap reference circuit and dcdc converter having the same

To provide a bandgap reference circuit capable of shortening a start time at power-on in a circuit lowered in power consumption. There is provided a bandgap reference circuit using an op amplifier to generate a reference voltage, which is equipped with a first current source connected between a power supply terminal and an operating current input terminal of the op amplifier, a second current source having one end connected to the power supply terminal, and a switch connected between the other end of the second current source and the operating current input terminal of the op amplifier, and in which a switch is turned on at power-on and turned off after starting of the reference voltage.. ... Sii Semiconductor Corporation

10/12/17 / #20170294577

Magnetic sensor and method of manufacturing the same

Provided are a magnetic sensor and a method of manufacturing the same. In the magnetic sensor and the method of manufacturing the same, a magnetic converging plate holder with a recessed pattern having the same shape and size as those of a magnetic converging plate is formed in a die pad of a package on which a semiconductor substrate having hall elements, a circuit, and the like is to be arranged, the magnetic converging plate manufactured through processes different from those of the semiconductor substrate on which the hall elements and the circuit are formed is inserted into the magnetic converging plate holder, and the semiconductor substrate having the hall elements, the circuit, and the like is arranged on the resultant so that a back surface thereof faces the die pad and the magnetic converging plate.. ... Sii Semiconductor Corporation

10/05/17 / #20170287898

Semiconductor device and method of manufacturing a semiconductor device

In a semiconductor device that uses an n-channel mos transistor as an electrostatic protection element, the n-channel mos transistor has a plurality of electric field relaxing areas, three of which have in a longitudinal direction three different impurity concentrations decreasing from an n-type high concentration drain region downward, and three of which have in a lateral direction three different impurity concentrations decreasing from the n-type high concentration drain region toward a channel region. An electric field relaxing area that is in contact with the electric field relaxing areas in the longitudinal direction and with the electric field relaxing areas in the lateral direction has the lowest impurity concentration.. ... Sii Semiconductor Corporation

09/28/17 / #20170279450

Level shift circuit

Provided is a level shift circuit capable of avoiding breakdown due to level shift operation. The level shift circuit includes: a floating power supply having one end connected to an output terminal; a circuit configured to receive a voltage of the floating power supply, a voltage of a low level power supply and first and second pulse signals from a pulse generating circuit, thereof to output first and second signals; and a logic circuit configured to receive first and second signals, thereby converting a signal that is input to the pulse generating circuit into a signal that fluctuates between a voltage at the one end of the floating power supply and a voltage at the other end thereof to output the converted signal.. ... Sii Semiconductor Corporation

09/28/17 / #20170279358

Voltage regulator

To provide a voltage regulator which is capable of testing a phase compensation capacitor without impairing stability as a regulator and prevents a chip area from being increased. A voltage regulator is configured to be equipped with a phase compensation capacitance test circuit for a phase compensation circuit and a negative voltage detection circuit for an external output voltage adjustment terminal and to apply a negative voltage to the external output voltage adjustment terminal to thereby start up the phase compensation capacitance test circuit, and measure the discharge time or current of a phase compensation capacitor to thereby test whether the phase compensation capacitor is good or not.. ... Sii Semiconductor Corporation

09/28/17 / #20170276709

Current detection circuit

To provide a current detection circuit capable of detecting with low current consumption that a prescribed current flows into a current measuring resistor. A current detection circuit is equipped with a reference voltage circuit which has two nmos transistors having different threshold voltages and a resistor, and generates a reference voltage at the resistor, and a comparison output circuit which is comprised of a pmos transistor, an nmos transistor, and a measuring resistor connected in series in a manner similar to a pmos transistor, an nmos transistor, and a resistor and outputs a comparison result.. ... Sii Semiconductor Corporation

09/21/17 / #20170272060

Oscillation circuit, booster circuit, and semiconductor device

Provided are an oscillation circuit, a booster circuit, and a semiconductor device capable of reducing power consumption when a power supply voltage is high. In a ring oscillator circuit which is the oscillation circuit, a pmos transistor in each of inverter circuits has a substrate connected to a first power supply voltage, and a source connected to a drain of a pmos transistor, which is a first constant current element configured to control a supply current to the inverter circuit, and the pmos transistor, which is the first constant current element, has a source connected to a second power supply voltage vreg, which serves as a constant voltage when the first power supply voltage is at a predetermined voltage or higher.. ... Sii Semiconductor Corporation

09/21/17 / #20170271986

Switching regulator

To provide a switching regulator equipped with an on-time control circuit small in power consumption. An on-time control circuit is configured to be equipped with switches each turned on/off by a signal controlling on and off of a switching element and be turned off during an off-time of the switching element.. ... Sii Semiconductor Corporation

09/21/17 / #20170271985

Switching regulator

To provide a switching regulator equipped with a power supply monitoring circuit small in current consumption. A switching regulator is configured to intermittently operate a power supply monitoring circuit only for a prescribed period based on a signal turning on a switching element, which is outputted from an output control circuit.. ... Sii Semiconductor Corporation

09/21/17 / #20170271575

Magnetic sensor and method of manufacturing the same

The magnetic sensor includes a semiconductor substrate having hall elements on a front surface of the semiconductor substrate, a conductive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the conductive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the base conductive layer on the back surface of the semiconductor substrate, formation of a resist on the base conductive layer having an opening for forming the magnetic flux converging plate, formation of the magnetic flux converging plate in the opening of the resist by electroplating, removal of the resist, and removal of a part of the base conductive layer by etching with the magnetic flux converging plate as a mask.. ... Sii Semiconductor Corporation

09/21/17 / #20170271453

Semiconductor device and method of manufacturing the same

Provided is a semiconductor device including a second conductivity type low-concentration diffusion layer (101) for an electric field relaxation reaching a lower portion of a gate oxide film so as to cover a drain diffusion layer (107), in which a second conductivity type medium-concentration diffusion layer (102) is formed within the second conductivity type low-concentration diffusion layer (101) for the electric field relaxation, and a second conductivity type high-concentration diffusion layer (103), which has a high concentration and small variation in structure due to suppression of heat treatment as much as possible, is formed within the second conductivity type medium-concentration diffusion layer (102).. . ... Sii Semiconductor Corporation

09/21/17 / #20170271401

Semiconductor device and method of manufacturing the same

A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate having a plurality of hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. ... Sii Semiconductor Corporation

09/21/17 / #20170271400

Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate having a plurality of hall elements formed therein, and a magnetic body formed on the semiconductor substrate and having a magnetic flux converging function. The contour in vertical cross-section of the magnetic body on the semiconductor substrate has an outer circumferential portion. ... Sii Semiconductor Corporation

09/21/17 / #20170271321

Semiconductor device including an esd protection element

A semiconductor device includes an off transistor using an nmos as an esd protection element that has n-type drain region (102), and p-type drain region (103) in a drain active region (105) . The p-type drain region (103) has a potential same as a potential of a p well or a p-type semiconductor substrate (106), and the esd protection element has a withstand voltage that is a junction withstand voltage of a pn junction in the drain active region (105) .. ... Sii Semiconductor Corporation

09/21/17 / #20170269622

Voltage regulator

Provided is a voltage regulator capable of suppressing fluctuation in a limited current. The voltage regulator includes: a first differential amplifier circuit configured to compare a voltage based on an output voltage and a reference voltage to each other, to thereby output a first voltage; a second differential amplifier circuit configured to compare the first voltage and a second voltage to each other, to thereby output a third voltage; a first transistor configured to receive the third voltage at a gate thereof such that the output voltage is generated at a drain thereof; a second transistor, which includes a gate connected in common to the gate of the first transistor and has a predetermined size ratio to the first transistor; and a voltage generating unit, which includes one end connected to a drain of the second transistor and is configured to generate the second voltage at the one end.. ... Sii Semiconductor Corporation

09/21/17 / #20170269169

Magnetic sensor and method of manufacturing the same

The magnetic sensor includes a semiconductor substrate having hall elements on a front surface of the semiconductor substrate, an adhesive layer formed on a back surface of the semiconductor substrate, and a magnetic flux converging plate formed on the adhesive layer. The magnetic flux converging plate is formed on the back surface of the semiconductor substrate through formation of the magnetic flux converging plate by electroplating on a base conductive layer formed on a plating substrate prepared separately from the semiconductor substrate, application of an adhesive for forming the adhesive layer onto a surface of the magnetic flux converging plate so that the magnetic flux converging plate adheres to the back surface of the semiconductor substrate, and peeling off of the plating substrate afterward from the base conductive layer formed on the magnetic flux converging plate.. ... Sii Semiconductor Corporation

09/14/17 / #20170264092

Switching regulator

To provide a switching regulator equipped with an overheat protection circuit small in current consumption. A switching regulator of the present invention is configured to intermittently operate an overheat protection circuit only for a prescribed period based on a signal turning on a switching element, which is outputted from an output control circuit.. ... Sii Semiconductor Corporation

09/14/17 / #20170263521

Resin-encapsulated semiconductor device

A first resin encapsulated body and a second resin encapsulated body are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body includes: a first semiconductor element; an external terminal; inner wiring; and a first resin for covering those components, at least a rear surface of the external terminal, a rear surface of the semiconductor element, and a surface of the inner wiring are exposed from the first resin. ... Sii Semiconductor Corporation

09/14/17 / #20170261566

Magnetic sensor and magnetic sensor device

Provided are a magnetic sensor, which is capable of accurately determining abnormalities, such as disconnection and a short circuit, of wiring of a magnetic sensor device, and the magnetic sensor device. An output control circuit of the magnetic sensor includes a voltage divider circuit, which is connected to an output terminal of the magnetic sensor, and an amplifier, which is configured to control a gate voltage of a mos transistor, which is connected to the output terminal of the magnetic sensor, so that a voltage of the voltage divider circuit and a reference voltage become equal to each other, with the result that an output voltage of the magnetic sensor is determined by the reference voltage and a voltage dividing ratio of the voltage divider circuit.. ... Sii Semiconductor Corporation

09/07/17 / #20170257161

Digital radio transmitter

There is provided a digital radio transmitter capable of meeting a legal standard even if unwanted emissions resulting from a switching frequency of a switching power supply occur in transmission waves. The digital radio transmitter includes: a switching power supply that determines a switching frequency by a synchronization signal of an oscillator; a data readout/transfer circuit that determines a transfer timing frequency of baseband data based on the synchronization signal of the oscillator; and a power amplifier using, as a vcc power source, voltage output from the switching power supply.. ... Sii Semiconductor Corporation

09/07/17 / #20170257028

Switching regulator

To operate a plurality of abnormality detecting functions of a switching regulator with low power consumption and configure an occupied area of a semiconductor device to be reduced. A switching regulator is configured to be equipped with a comparison circuit, switch circuits, and a switch control circuit and to switch the switch circuits by control signals of the switch control circuit and realize a plurality of abnormality detecting functions by the one comparison circuit.. ... Sii Semiconductor Corporation

09/07/17 / #20170256658

Optical sensor device

A package for an optical sensor device has a double-molded structure in which a first resin molded portion and a second resin molded portion are integrated. The first resin molded portion has a structure in which peripheries of a die pad portion on which an optical sensor element is mounted and a part of leads are molded with a resin so as to be integrated. ... Sii Semiconductor Corporation

09/07/17 / #20170256582

Semiconductor device and a method of manufacturing a semiconductor device

In order to form a light receiving element having high reliability and a mos transistor together on the same silicon substrate, after forming a gate electrode of the mos transistor, a gate oxide film in a light receiving element forming region is removed. Then, a thermal oxide film is newly formed in the light receiving element forming region, and ion implantation is performed in the light receiving element forming region through the thermal oxide film such that a shallow pn junction is formed.. ... Sii Semiconductor Corporation

09/07/17 / #20170256579

Semiconductor device having a light receiving element

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a p-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an soi layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.. . ... Sii Semiconductor Corporation

09/07/17 / #20170256545

Method of manufacturing semiconductor integrated circuit device

Provided is a semiconductor integrated circuit device including a first n-channel type high withstanding-voltage mos transistor and a second n-channel type high withstanding-voltage mos transistor formed on an n-type semiconductor substrate, the first n-channel type high withstanding-voltage transistor including a third n-type low-concentration impurity region containing arsenic having a depth smaller than a p-type well region in a drain region within the p-type well region, and the second n-channel type high withstanding-voltage mos transistor including a fourth n-type low-concentration impurity region that is adjacent to the p-type well region and has a bottom surface being in contact with the n-type semiconductor substrate. In this manner, the high withstanding-voltage nmos transistors capable of operating at 30 v or higher are integrated on the n-type semiconductor substrate.. ... Sii Semiconductor Corporation

09/07/17 / #20170255219

Output circuit

The output circuit includes: a control voltage generating circuit configured to generate a control voltage; a first mos transistor having a gate for receiving the control voltage; a second mos transistor having a gate to which a first input signal is input; a third mos transistor having a gate to which a second input signal is input; and a fourth mos transistor which has a gate connected to a source of the first mos transistor, and a drain connected to an output terminal, and is configured to be driven with the first input signal and the second input signal to output an output signal to the output terminal. The control voltage generating circuit is configured to absorb fluctuations in control voltage, which are caused due to changes in first input signal and second input signal, to thereby maintain the control voltage at a predetermined voltage.. ... Sii Semiconductor Corporation

08/31/17 / #20170250661

Switched-capacitor input circuit, switched-capacitor amplifier, and switched-capacitor voltage comparator

In order to realize a circuit in a subsequent stage with a smaller circuit scale with respect to a single-ended input of a large signal, a double-sampling switched-capacitor input circuit includes a first switched-capacitor input circuit, which includes first capacitors for double sampling, and a second switched-capacitor input circuit, which includes second capacitors for double sampling, and which is configured to operate in opposite phase to the first switched-capacitor input circuit, the double-sampling switched-capacitor input circuit having a configuration in which the first capacitors and the second capacitors have different values, and in which the value of the second capacitors is adjusted so that a signal is attenuated.. . ... Sii Semiconductor Corporation

08/31/17 / #20170250606

Switching regulator

Provided is a switching regulator configured to suppress noise coupling, which may occur when a comparator is switched between a normal current operation and a low current consumption operation, to thereby operate stably. The switching regulator has a configuration in which switches are connected to input terminals of the comparator, and a feedback resistor having a large resistance value is disconnected from the input terminal of the comparator when switching is performed between the normal current operation and the low current consumption operation.. ... Sii Semiconductor Corporation

08/31/17 / #20170250136

Semiconductor device

Provided is a semiconductor device in which a fuse element, which is cuttable by a laser, can be stably cut. The fuse element includes an upper fuse element, a lower fuse wiring line, and a fuse connecting contact such that, in cutting the fuse element by a laser, the lower fuse wiring line is protected by an inter-layer film, and only the upper fuse element is efficiently melted and evaporated. ... Sii Semiconductor Corporation

08/24/17 / #20170244320

Switching regulator

To provide a cot-controlled switching regulator capable of preventing an output voltage from excessively exceeding a desired voltage even though a light load is connected to an output terminal. A switching regulator of the present invention is configured to be equipped with a 100% duty detection circuit which detects a 100% duty at which a high-side switching element continues an on state for a prescribed time or more and outputs a detected signal to an output control circuit and to cause the output control circuit to turn off the high-side switching element when the output control circuit receives the detected signal therein.. ... Sii Semiconductor Corporation

08/17/17 / #20170237350

Dc-dc converter

To provide a synchronous rectification type dc-dc converter equipped with a protection circuit operated stably. There is provided a dc-dc converter equipped with a detection circuit which detects that electrical energy accumulated in an inductor is lost, or a timer circuit which counts a prescribed time after the protection circuit detects an abnormality. ... Sii Semiconductor Corporation

08/10/17 / #20170229958

Switching regulator

To provide a switching regulator reduced in current consumption without sacrificing efficiency. There is provided a switching regulator equipped with a timer circuit and configured to reduce an operation current of a comparator by the timer circuit in a light load mode.. ... Sii Semiconductor Corporation

08/10/17 / #20170229355

Method of manufacturing semiconductor device having semiconductor chip mounted on lead frame

A semiconductor device uses a lead frame, in which an outer lead is electrically connected to an inner lead suspension lead via an inner lead. An encapsulating resin covers the inner lead and part of the outer lead, and a plated film is formed on an outer lead cut surface so that a solder layer is easily formed on all surfaces of the outer lead extending from the encapsulating resin. ... Sii Semiconductor Corporation

08/03/17 / #20170222548

Voltage-current conversion circuit and switching regulator including the same

Provided are a switching regulator and a voltage-current conversion circuit configured to shorten a start-up period. The voltage-current conversion circuit includes: a first mos transistor of a first conductivity type including a gate and a drain connected in common, and a source connected to a first power supply terminal; a first resistor connected between the drain of the first mos transistor and a second power supply terminal; and a correction current generation unit including a second resistor, and configured to generate, as a correction current, through use of the second resistor, a current corresponding to a current generated when a voltage corresponding to an absolute value of a gate-source voltage of the first mos transistor is applied to the first resistor. ... Sii Semiconductor Corporation

08/03/17 / #20170221878

Semiconductor device having esd element

When an esd element is operated, for the purpose of suppressing heat generation and causing uniform current to flow through all channels of all transistors included in the esd element, various substrate potentials existing in the transistors and the channels of a multi finger type esd element are electrically connected via a low resistance substrate, and further, are set to a potential that is different from a vss potential. In this manner, the current is uniformized and heat generation is suppressed through low voltage operation to improve an esd tolerance.. ... Sii Semiconductor Corporation

08/03/17 / #20170221824

Semiconductor device

Provided is a semiconductor device preventing readhesion of conductive body which forms fuse elements and breakage of the fuse elements. The semiconductor device includes a first insulating film formed on a semiconductor substrate, a plurality of fuse elements formed on the first insulating film adjacent to one another, a protective insulating film covering at least side surfaces of the fuse elements, and a second insulating film formed of one of a bpsg film and a psg film to cover the fuse elements and the protective insulating film. ... Sii Semiconductor Corporation

08/03/17 / #20170221804

Resin-encapsulated semiconductor device

Provided is a resin-encapsulated semiconductor device in which heat dissipation characteristic and mounting strength to a substrate are improved. Heat dissipation outer leads connected to inner leads connected to the four corners of a die pad are exposed to the outside of an encapsulating resin to improve the heat dissipation characteristic. ... Sii Semiconductor Corporation

07/27/17 / #20170213775

Semiconductor device

Provided is a semiconductor device in which an internal pressure change in a cavity structure can be inspected. A semiconductor device (1), which is formed of a cavity-type package having a space in an inner part thereof, includes a pressure gauge (2), which enables inspection of a state of an internal space, and which is arranged on a surface of the semiconductor device (1). ... Sii Semiconductor Corporation

07/20/17 / #20170205843

Voltage regulator

A safe and low-cost voltage regulator is provided through simplification of a circuit configuration of a protection circuit. The voltage regulator has a configuration in which current output of the protection circuit, which serves as a signal indicating that the protection circuit has started to operate, is input to a control circuit configured to improve responsiveness of the voltage regulator.. ... Sii Semiconductor Corporation

07/20/17 / #20170205842

Voltage regulator

Provided is a voltage regulator configured to stably operate with low current consumption, and having good responsiveness. A delay circuit is provided between a transient response improvement circuit and a voltage amplifier circuit.. ... Sii Semiconductor Corporation

07/13/17 / #20170199252

Hall sensor

A hall sensor includes a hall element and a heat source element in a circuit configured to drive the semiconductor hall element, and capable of eliminating an offset voltage without increasing a chip size. In the hall sensor, a hall element control current flowing between one pair of terminals out of two pairs and a hall element control current flowing between another pair of terminals cross each other as vectors, the hall element has a shape that is line-symmetrical to the straight line along a vector sum of the hall element control current and the hall element control current, and the heat source element is arranged so that the center of the heat source is positioned on the straight line along the vector sum of the hall element control current and the hall element control current.. ... Sii Semiconductor Corporation

06/29/17 / #20170187362

Clock selection circuit and power supply device equipped with the same

To provide a clock selection circuit capable of reducing clock omission generated when switching from a state of being synchronized with a first clock to a second clock. The clock selection circuit is equipped with a clock detection circuit which detects a first clock to output a detected signal, a switch which outputs the first clock when the detected signal is at a first level and outputs a second clock when the detected signal is at a second level different from the first level, and a one-shot circuit which outputs a one-shot pulse in response to switching of the detected signal from the first level to the second level. ... Sii Semiconductor Corporation

06/29/17 / #20170187330

Differential amplifier circuit

Provided is a differential amplifier circuit having a low current consumption and a small circuit area. The differential amplifier circuit is formed as a drain grounding circuit (source follower circuit), which includes two stages of output transistors that are connected to two stages of amplifier circuits in series, and is configured to control one of the two output transistors by output from the amplifier circuit in the first stage, and to control another of the two output transistors by output from the amplifier circuit in the second stage.. ... Sii Semiconductor Corporation

06/22/17 / #20170179812

Soft start circuit and power supply device equipped therewith

To provide a soft start circuit capable of obtaining a high-accuracy soft start time. The soft start circuit is equipped with a constant current source, an output terminal which outputs a soft start voltage, a ground terminal, a first transistor which is connected between the constant current source and the ground terminal and has a gate and a drain both short-circuited, a second transistor which is connected between the constant current source and the output terminal and receives a clock signal at a gate thereof, and a capacitor connected between the second transistor and the ground terminal.. ... Sii Semiconductor Corporation

06/15/17 / #20170170730

Amplifier circuit and voltage regulator

Provided are an amplifier circuit capable of improving phase characteristics, and a voltage regulator including the amplifier circuit. The amplifier circuit is configured to amplify an input voltage and to output the input voltage, and includes a current source, a first transistor having a gate to which the input voltage is applied, and a second transistor having a gate to which a voltage synchronous with the input voltage is applied, and a source connected to a capacitor.. ... Sii Semiconductor Corporation

06/08/17 / #20170162588

Semiconductor nonvolatile memory element and manufacturing method thereof

A semiconductor nonvolatile memory element is used to form a constant current source in a semiconductor integrated circuit device. The semiconductor nonvolatile memory element includes a control gate electrode, a floating gate electrode, source/drain terminals, a thin first gate insulating film, and a second gate insulating film that is thick enough not to be broken down even when a voltage higher than an operating voltage of the semiconductor integrated circuit device is applied thereto, the first and second gate insulating films being formed below the control gate electrode. ... Sii Semiconductor Corporation

06/08/17 / #20170160764

Voltage regulator

The voltage regulator includes an overheat protection circuit. The overheat protection circuit includes: a temperature sensing circuit; a voltage difference sensing circuit configured to output a current depending on a voltage difference between a power source voltage to be supplied to a power supply terminal and the output voltage; an output current monitoring circuit; a second reference voltage circuit configured to generate a second reference voltage; a comparator circuit configured to compare an output voltage of the temperature sensing circuit and the second reference voltage to each other; and an overheat protection transistor is configured to turn off the output transistor when the result of the comparison indicates an overheated state. ... Sii Semiconductor Corporation

06/01/17 / #20170155255

Charging/discharging control circuit and battery apparatus

To provide a charging/discharging control circuit and a battery apparatus which control charging/discharging of secondary batteries connected in parallel and are high in safety while being low in cost. A charging/discharging control circuit and a battery apparatus are each configured to be provided with a voltage detection portion which detects a difference in voltage between secondary batteries connected in parallel or detects that backward currents are made to flow through charging/discharging control switches which are respectively connected to the parallel-connected secondary batteries and control charging/discharging thereof.. ... Sii Semiconductor Corporation

06/01/17 / #20170150946

Transmission circuit for ultrasonic diagnosis and method for transmitting ultrasonic wave

A transmission circuit for ultrasonic diagnosis includes a delay processing circuit that delays a transmission signal pattern and an operational circuit that calculates a delay time. A transmission timing for supplying the transmission signal pattern to a plurality of piezo electric elements corresponding to a plurality of channels is approximated by a multi-dimensional polynomial with locations of the plurality of piezo electric elements being variables so that the transmission timing becomes linear or arc-like. ... Sii Semiconductor Corporation

05/11/17 / #20170134029

Oscillation circuit device

To provide an oscillation circuit device capable of when detecting an input reference signal and making a transition from a self-running state to a pll operation, suppressing a fluctuation in the frequency of an output signal clk to thereby obtain a smoothly-synchronized and stable output signal clk. There is provided an oscillation circuit device which is adapted to configure a negative feedback circuit by a v/i conversion element to which one end of a filter circuit is connected, and a buffer circuit in a self-running state, and has a configuration which enables a capacitance in the filter circuit to be charged rapidly in such a manner that an output signal clk can be started from a frequency equal to that in the self-running state immediately after a transition to a pll operation.. ... Sii Semiconductor Corporation

05/11/17 / #20170131155

Overheat detection circuit, overheat protection circuit, and semiconductor device

Provided is an overheat detection circuit capable of easily adjusting a detection temperature of the overheat detection circuit. The overheat detection circuit includes: a first resistor; a second resistor, which has the same temperature characteristics with the first resistor, and has an adjustable resistance value; and a heat sensitive element connected to one end of the second resistor, in which a first current, which is based on a first voltage, is supplied to the first resistor, a current, which is proportional to the first current, is supplied to the second resistor so that a second voltage is generated at another end of the second resistor, and when the first voltage and the second voltage are compared, a result of the comparison is output as an overheat detection signal.. ... Sii Semiconductor Corporation

05/04/17 / #20170122997

Semiconductor device and method of inspecting a semiconductor device

Provided is a semiconductor device including a mos analog circuit which has a high reliability and a low manufacturing cost, and in which latent failure is easily detected. The mos analog circuit is switched to a test state or an operating state based on a control signal that is externally supplied. ... Sii Semiconductor Corporation

04/13/17 / #20170103804

Nonvolatile memory device

There is provided a nonvolatile memory device having a writing error preventing function with high noise resistance. This structure includes a switch and a noise filter circuit connected in parallel to a clock terminal, wherein a clock pulse monitoring circuit compares the number of clocks input from the clock terminal with a prescribed number, and when detecting abnormality in the number of clocks, switches to a noise countermeasure mode in which the switch is turned off to validate the noise filter circuit.. ... Sii Semiconductor Corporation

03/30/17 / #20170093378

Input circuit

To provide an input circuit which avoids power supply voltage dependency of a threshold of the input circuit when an output signal is transited. There is provided an input circuit equipped with an input transistor and a current source connected in series between a first power supply and a second power supply. ... Sii Semiconductor Corporation

03/30/17 / #20170093354

Receiver and communication system

There is provides a single conversion receiver and a communication system having wide occupied frequency bands and good receiving sensitivity. The single conversion receiver includes: a first bandpass filter that lets only a desired band of a received rf signal pass through; a first mixer that converts the rf signal passing through the first bandpass filter into a first intermediate frequency signal; a second bandpass filter that lets only a band of a desired frequency channel of the first intermediate frequency signal pass through; a quadrature demodulator that converts the first intermediate frequency signal to baseband signals composed of an i phase and a q phase; an oscillator that generates a first local signal 2̂m times the center frequency of the second bandpass filter (where m is an integer); a fractional-n pll frequency synthesizer that generates a second local signal with a frequency non-integer times the first local signal and supplies the second local signal to the first mixer; and a first frequency divider that divides the frequency of the first local signal by (2̂m) to generate a third local signal and a fourth local signal having 90 degree phase difference from the third local signal, and supplies the third local signal and the fourth local signal to the quadrature demodulator.. ... Sii Semiconductor Corporation

03/30/17 / #20170093334

Oscillation circuit

Provided is an oscillation circuit that can limit a maximum value and a minimum value of a frequency even when some troubles are caused in a v/i conversion circuit. The oscillation circuit includes a current controlled oscillator configured to oscillate based on an input current, and a current limiting circuit configured to: compare the input current with a first constant current and with a second constant current; limit, when the input current reaches the first constant current, a maximum current value of the input current with a transistor arranged on a path of the input current; and limit, when the input current is lowered to the second constant current, a minimum current of the input current through addition of current on the path of the input current by a transistor arranged in parallel with the path of the input current.. ... Sii Semiconductor Corporation

03/30/17 / #20170092512

Semiconductor-substrate processing apparatus, method of stripping a photoresist, and method of manufacturing a semiconductor device

Provided is a method of reducing resist residue on a semiconductor substrate surface in a step of performing resist stripping, by introducing ozone gas into a chemical solution. Circulation lines are arranged for a tank (12) for performing processing on the semiconductor substrate (1), and two circulation pumps (131, 132) and two filters (141, 142) are arranged on those circulation lines. ... Sii Semiconductor Corporation

03/30/17 / #20170090496

Voltage regulator

The voltage regulator includes a reference voltage circuit configured to feed back the reference voltage as a feedback voltage and to output the reference voltage, a soft-start circuit configured to output a control signal for controlling the reference voltage to rise linearly at a start of power supply, a voltage divider circuit configured to output a divided voltage, an error amplifier circuit configured to amplify and output a difference between the reference voltage and the divided voltage, and an output transistor controlled by an output voltage of the error amplifier circuit. The reference voltage circuit includes an analog switch transistor having a gate controlled by the control signal, and the feedback voltage is an output voltage from the analog switch transistor.. ... Sii Semiconductor Corporation

03/23/17 / #20170084547

Semiconductor device, lead frame, and method of manufacturing lead frame

Provided is a lead frame that may prevent resin cracks from occurring in a semiconductor device. When a lead frame (3) is formed through press working, punching burrs (3d) are formed on tips of inner leads (3b) to serve as anchors with respect to a resin (5). ... Sii Semiconductor Corporation

03/16/17 / #20170077309

Semiconductor memory device and method of manufacturing the same

Provided is a semiconductor device, which prevents unnecessary voltage drop in a mos transistor that is connected in series in a location between a booster circuit and a memory main body portion, to thereby operate on a low voltage and improve the on/off ratio so that chip size shrinking and memory performance improvement are accomplished simultaneously. In a semiconductor memory device including a memory transistor portion and a select transistor portion, at least the select transistor portion is formed of a fin-shaped single-crystal semiconductor thin film.. ... Sii Semiconductor Corporation

02/16/17 / #20170047836

Voltage regulator

To provide a voltage regulator equipped with an overcurrent protection circuit which needs not to separately adjust a limited current and a short-circuited current and is capable of collectively adjusting them. There is provided an overcurrent protection circuit equipped with an output current limitation circuit which distributes a current supplied from a transistor sensing an output current of an output transistor and controls a gate voltage of the output transistor by the distributed current to limit the output current. ... Sii Semiconductor Corporation

02/09/17 / #20170040186

Semiconductor device and method of manufacturing the same

Provided is a method of manufacturing a semiconductor device with sufficient heat dissipation property, in which a mold configured to mold an island for mounting a semiconductor chip thereon includes an inner punch (10), punch guides (11), and outer punches (12), and in which a recessed portion (14), protruding walls (8), and thin walled portions (9) of the island are formed through pressing of the mold. A front surface and side surfaces of the island, the thin walled portions, the semiconductor chip, inner leads, and wires are encapsulated by resin while a rear surface of the island is exposed from the resin.. ... Sii Semiconductor Corporation

02/09/17 / #20170036318

Polishing head, cmp apparatus having polishing head, and semiconductor integrated circuit manufacturing method using cmp apparatus

Provided is a polishing head of a cmp apparatus that is improved in the evenness of polishing. The polishing head includes a polishing pad, an air bag brought into contact with a rear surface of a wafer on the polishing pad and is configured to press a front surface of the wafer against the polishing pad, and a top ring surrounding the air bag and the wafer. ... Sii Semiconductor Corporation

01/26/17 / #20170025320

Resin-encapsulatd semiconductor device and method of manufacturing the same

A first resin encapsulated body (25) and a second resin encapsulated body (26) are stacked to form a resin-encapsulated semiconductor device. The first resin encapsulated body (25) includes: a first semiconductor element (2); an external terminal (5); inner wiring (4); and a first resin (6) for covering those components, at least a rear surface of the external terminal (5), a rear surface of the semiconductor element (2), and a surface of the inner wiring (4) are exposed from the first resin (6). ... Sii Semiconductor Corporation

01/26/17 / #20170023960

Voltage regulator

Provided is a voltage regulator which is not affected by a variation in output impedance of a reference voltage circuit, that is, which is configured to output voltage with a small change due to temperature. Two reference voltages respectively having positive and negative temperature coefficients are added together through transconductance amplifiers having large input impedances, respectively, and the resultant is amplified.. ... Sii Semiconductor Corporation

01/05/17 / #20170005490

Charging/discharging control circuit, charging/discharging control device, and battery apparatus

To suppress an increase in the number of components in a charging/discharging control device and a battery apparatus which perform charging/discharging of a plurality of secondary batteries connected in series. A first charging/discharging control circuit receives an overdischarge signal generated based on the turning off of a discharging control switch therein and generates a power-down signal, based on the overdischarge signal to power-down a first battery voltage monitoring circuit. ... Sii Semiconductor Corporation

01/05/17 / #20170005174

Method of manufacturing a semiconductor device

Provided is a method of manufacturing a semiconductor device, for suppressing channeling that may occur during ion implantation to a polycrystalline silicon layer (4), the method including: exposing, in an opening portion formed in a second photoresist layer (8), a first photoresist layer (5) that has been used for patterning the polycrystalline silicon layer (4); and implanting impurities by ion implantation with the first photoresist layer (5) being a mask for a gate electrode (4-1) formed of the polycrystalline silicon layer (4).. . ... Sii Semiconductor Corporation

01/05/17 / #20170005024

Semiconductor device

Provided is a semiconductor device that includes a passivation film thinner than a wiring layer and has a high resistance to a stress caused during bonding. In the semiconductor device, a wiring layer (303) is formed in the vicinity of a bonding pad (301) via a gap (601), a passivation film (401) has a thickness smaller than that of the wiring layer (303) forming the bonding pad (301), and the gap (601) has a width equal to or smaller than twice the passivation film thickness.. ... Sii Semiconductor Corporation

01/05/17 / #20170003327

Battery monitoring system

Provided is a battery monitoring system that has a high level of safety even under a state in which characteristics of a reference voltage circuit are deteriorated. The battery monitoring system has a configuration in which: a reference voltage of a first battery monitoring ic is monitored by a second battery monitoring ic; and the second battery monitoring ic outputs, when detecting that the reference voltage reaches a value falling outside a predetermined range, a signal indicating an abnormality of the reference voltage to the first battery monitoring ic, and the first battery monitoring ic stops monitoring of a battery when the signal indicating the abnormality of the reference voltage is input to the first battery monitoring ic.. ... Sii Semiconductor Corporation








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