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Silicon Storage Technology Inc
Silicon Storage Technology Inc_20100107

Silicon Storage Technology Inc patents


Recent patent applications related to Silicon Storage Technology Inc. Silicon Storage Technology Inc is listed as an Agent/Assignee. Note: Silicon Storage Technology Inc may have other listings under different names/spellings. We're not affiliated with Silicon Storage Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Silicon Storage Technology Inc-related inventors


High speed and low power sense amplifier

An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.... Silicon Storage Technology Inc

Non-volatile split gate memory cells with integrated high k metal gate logic device and metal-free erase gate, and making same

A method of forming split gate non-volatile memory cells on the same chip as logic and high voltage devices having HKMG logic gates. The method includes forming the source and drain regions, floating gates, control gates, and the poly layer for the erase gates and word line gates in the... Silicon Storage Technology Inc

Dynamic programming of advanced nanometer flash memory

An improved method and apparatus for programming advanced nanometer flash memory cells is disclosed.... Silicon Storage Technology Inc

Sensing amplifier comprising a built-in sensing offset for flash memory devices

The present invention relates to an improved sensing amplifier and related method for use in read operations in flash memory devices. In one embodiment, the sensing amplifier includes a built-in voltage offset. In another embodiment, a voltage offset is induced in the sensing amplifier through the use of capacitors. In... Silicon Storage Technology Inc

Method of integrating finfet cmos devices with embedded nonvolatile memory cells

A method of forming a memory device with memory cells over a planar substrate surface and FinFET logic devices over fin shaped substrate surface portions, including forming a protective layer over previously formed floating gates, erase gates, word line poly and source regions in a memory cell portion of the... Silicon Storage Technology Inc

Deep learning neural network classifier using non-volatile memory array

An artificial neural network device that utilizes one or more non-volatile memory arrays as the synapses. The synapses are configured to receive inputs and to generate therefrom outputs. Neurons are configured to receive the outputs. The synapses include a plurality of memory cells, wherein each of the memory cells includes... Silicon Storage Technology Inc

Array of three-gate flash memory cells with individual memory cell read, program and erase

A memory device and method of erasing same that includes a substrate of semiconductor material and a plurality of memory cells formed on the substrate and arranged in an array of rows and columns. Each of the memory cells includes spaced apart source and drain regions in the substrate, with... Silicon Storage Technology Inc

Flash memory cell and associated decoders

The present invention relates to a flash memory cell with only four terminals and decoder circuitry for operating an array of such flash memory cells. The invention allows for fewer terminals for each flash memory cell compared to the prior art, which results in a simplification of the decoder circuitry... Silicon Storage Technology Inc

Flash memory array with individual memory cell read, program and erase

A memory device that provides individual memory cell read, write and erase. In an array of memory cells arranged in rows and columns, each column of memory cells includes a column bit line, a first column control gate line for even row cells and a second column control gate line... Silicon Storage Technology Inc

Method of making split gate non-volatile flash memory cell

A method of forming a non-volatile memory cell on a substrate having memory cell and logic circuit regions by forming a pair of conductive floating gates in the memory cell region, forming a first source region in the substrate between the pair of floating gates, forming a polysilicon layer in... Silicon Storage Technology Inc

Reduced size split gate non-volatile flash memory cell and making same

A reduced size non-volatile memory cell array is achieved by forming first trenches in an insulation layer in the row direction, filling the first trenches with insulation material, forming second trenches in the insulation layer in the column direction, forming the STI isolation material in the second trenches, and forming... Silicon Storage Technology Inc

Three-dimensional flash nor memory system with configurable pins

A three-dimensional flash memory system is disclosed. The system comprises a memory array comprising a plurality of stacked dies, where each die comprises memory cells. The system further comprises a plurality of pins, where the function of at least some of the pins can be configured using a mechanism that... Silicon Storage Technology Inc

Multi-step voltage for forming resistive random access memory (rram) cell filament

A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage... Silicon Storage Technology Inc

Split-gate, twin-bit non-volatile memory cell

A memory device that includes a substrate of semiconductor material of a first conductivity type, first and second regions spaced apart in the substrate and having a second conductivity type different than the first conductivity type, with a continuous channel region in the substrate extending between the first and second... Silicon Storage Technology Inc

Power sequencing for embedded flash memory devices

A system and method for improved power sequencing within an embedded flash memory device is disclosed.... Silicon Storage Technology Inc

Low power sense amplifier for a flash memory system

Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is... Silicon Storage Technology Inc

Method of making split gate non-volatile memory cell with 3d finfet structure

A non-volatile memory cell, and method of making, that includes a semiconductor substrate having a fin shaped upper surface with a top surface and two side surfaces. Source and drain regions are formed in the fin shaped upper surface portion with a channel region there between. A conductive floating gate... Silicon Storage Technology Inc

Method of manufacturing a non-volatile memory cell and array having a trapping charge layer in a trench

A memory cell formed by forming a trench in the surface of a substrate. First and second spaced apart regions are formed in the substrate with a channel region therebetween. The first region is formed under the trench. The channel region includes a first portion that extends along a sidewall... Silicon Storage Technology Inc

Split gate non-volatile flash memory cell having metal gates and making same

A memory device including a silicon substrate having a planar upper surface in a memory cell area and an upwardly extending silicon fin in a logic device area. The silicon fin includes side surfaces extending up and terminating at a top surface. The logic device includes spaced apart source and... Silicon Storage Technology Inc

Integration of metal floating gate in non-volatile memory

A non-volatile memory cell that includes a silicon substrate, source and drain regions formed in the silicon substrate (where a channel region of the substrate is defined between the source and drain regions), a metal floating gate disposed over and insulated from a first portion of the channel region, a... Silicon Storage Technology Inc

Method of forming flash memory with separate wordline and erase gates

A method of forming a non-volatile memory cell includes forming spaced apart first and second regions in a substrate, defining a channel region there between. A floating gate is formed over a first portion of the channel region and over a portion of the first region, wherein the floating gate... Silicon Storage Technology Inc

Power driven optimization for flash memory

A memory device, and method of operation, includes an array of non-volatile memory cells and a controller. The controller is configured to perform an operation (e.g. erase, program, etc.) on a first plurality of the non-volatile memory cells using operational voltages with a first energy margin, and perform the same... Silicon Storage Technology Inc

Method of making embedded memory device with silicon-on-insulator substrate

A method of forming a semiconductor device with memory cells and logic devices on the same silicon-on-insulator substrate. The method includes providing a substrate that includes silicon, a first insulation layer directly over the silicon, and a silicon layer directly over the first insulation layer. Silicon is epitaxially grown on... Silicon Storage Technology Inc

Method of forming memory array and logic devices

A method of forming a memory device on a substrate having memory, core and HV device areas. The method includes forming a pair of conductive layers in all three areas, forming an insulation layer over the conductive layers in all three areas (to protect the core and HV device areas),... Silicon Storage Technology Inc

Fully depleted silicon on insulator flash memory design

The present invention relates to a flash memory system wherein one or more circuit blocks utilize fully depleted silicon-on-insulator transistor design to minimize leakage... Silicon Storage Technology Inc

Non-volatile split gate memory cells with integrated high k metal gate, and making same

A method of forming a pair of memory cells that includes forming a polysilicon layer over and insulated from a semiconductor substrate, forming a pair of conductive control gates over and insulated from the polysilicon layer, forming first and second insulation layers extending along inner and outer side surfaces of... Silicon Storage Technology Inc

Flash memory system using complementary voltage supplies

A non-volatile memory device comprises a semiconductor substrate of a first conductivity type. An array of non-volatile memory cells is located in the semiconductor substrate and arranged in a plurality of rows and columns. Each memory cell comprises a first region on a surface of the semiconductor substrate of a... Silicon Storage Technology Inc

Split gate nand flash memory structure and array, programming, erasing and reading thereof, and manufacturing

A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first... Silicon Storage Technology Inc

Self-aligned source for split-gate non-volatile memory cell

A memory device having a pair of conductive floating gates with inner sidewalls facing each other, and disposed over and insulated from a substrate of first conductivity type. A pair of spaced apart conductive control gates each disposed over and insulated from one of the floating gates, and each including... Silicon Storage Technology Inc

Non-volatile split gate memory cells with integrated high k metal gate logic device and metal-free erase gate, and making same

A method of forming split gate non-volatile memory cells on the same chip as logic and high voltage devices having HKMG logic gates. The method includes forming the source and drain regions, floating gates, control gates, and the poly layer for the erase gates and word line gates in the... Silicon Storage Technology Inc

Three-dimensional flash memory system

A three-dimensional flash memory system is disclosed.... Silicon Storage Technology Inc

Split gate non-volatile memory cell having a floating gate, word line, erase gate, and manufacturing

A memory device including a silicon semiconductor substrate, spaced apart source and drain regions formed in the substrate with a channel region there between, and a conductive floating gate disposed over a first portion of the channel region and a first portion of the source region. An erase gate includes... Silicon Storage Technology Inc








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