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Siltronic Ag
Siltronic Ag_20100121
Siltronic Ag_20100128
  

Siltronic Ag patents

Recent patent applications related to Siltronic Ag. Siltronic Ag is listed as an Agent/Assignee. Note: Siltronic Ag may have other listings under different names/spellings. We're not affiliated with Siltronic Ag, we're just tracking patents.

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Date Siltronic Ag patents (updated weekly) - BOOKMARK this page
04/27/17Susceptor for holding a semiconductor wafer having an orientation notch, a depositing a layer on a semiconductor wafer, and semiconductor wafer
08/18/16Ultrasonic cleaning method
08/11/16A semiconductor wafer and a producing the semiconductor wafer
07/14/16Method for dressing polishing pads
06/23/16Method for growing a single crystal by crystallizing the single crystal from a float zone
03/03/16Method of supporting a growing single crystal during crystallization of the single crystal according to the fz method
02/25/16Ultrasonic cleaning method
02/25/16Semiconductor wafer composed of monocrystalline silicon and producing it
02/11/16Method for monitoring the operational state of a surface inspection system for detecting defects on the surface of semiconductor wafers
12/10/15Apparatus and process for producing a crystal of semiconductor material
11/12/15Semiconductor wafer composed of silicon and producing same
11/05/15Method for simultaneously cutting a multiplicity of slices of particularly uniform thickness from a workpiece
10/22/15Epitaxial wafer and a manufacturing thereof
10/15/15Apparatus and process for producing a single crystal of silicon
10/15/15Method for drying wafer substrates and wafer holder for conduction of the method
10/08/15Method for slicing wafers from a workpiece using a sawing wire
07/23/15Device for producing a monocrystal by crystallizing said monocrystal in a melting area
06/11/15Method for slicing wafers from a workpiece by means of a wire saw
03/26/15Method for simultaneously cutting a multiplicity of wafers from a workpiece
02/26/15Device for depositing a layer on a semiconductor wafer by means of vapour deposition
02/12/15Method for manufacturing single-crystal silicon
12/18/14Method for the double-side polishing of a semiconductor wafer
12/11/14Method for controlling the diameter of a single crystal to a set point diameter
11/06/14Method for manufacturing single-crystal silicon
10/16/14Method for polishing semiconductor wafers by means of simultaneous double-side polishing
09/25/14Method for polishing a semiconductor material wafer
09/18/14Semiconductor wafer with a layerof alzga1-zn and process for producing it
08/21/14Method for conditioning polishing pads for the simultaneous double-side polishing of semiconductor wafers
07/24/14Method for polishing a semiconductor wafer
06/19/14Method and trimming the working layers of a double-side grinding apparatus
06/19/14Method and trimming the working layers of a double-side grinding apparatus
05/29/14Method for resuming a wire sawing process of a workpiece after an unplanned interruption
05/22/14Process for polishing a semiconductor wafer, comprising the simultaneous polishing of a front side and of a reverse side of a substrate wafer
03/06/14Method for producing a silicon single crystal
02/20/14Layered semiconductor substrate and manufacturing it
02/13/14Semiconductor wafer composed of monocrystalline silicon and producing it
11/28/13Ultrasonic cleaning method and ultrasonic cleaning apparatus
11/28/13Ultrasonic cleaning method and ultrasonic cleaning apparatus
11/28/13Ultrasonic cleaning method and ultrasonic cleaning apparatus
11/28/13Ultrasonic cleaning method and ultrasonic cleaning apparatus
10/24/13Method of manufacturing silicon single crystal, silicon single crystal, and wafer
10/17/13Method of manufacturing annealed wafer
10/10/13Dissolved nitrogen concentration monitoring method, substrate cleaning method, and substrate cleaning apparatus
08/29/13Method and an growing a silicon single crystal from a melt
08/15/13Apparatus and simultaneously slicing a multiplicity of slices from a workpiece
08/01/13Method for producing a single crystal of semiconductor material
08/01/13Cleaning method
08/01/13Cleaning apparatus, equipment, and method
07/25/13Method for polishing a semiconductor wafer
06/27/13Method and producing a single crystal
06/27/13Ultrasonic cleaning method
06/27/13Silicon single crystal substrate and manufacturing the same
06/20/13Polishing pad and polishing a semiconductor wafer
05/09/13Cleaning apparatus, measurement method and calibration method
04/18/13P-type silicon single crystal and manufacturing the same
03/28/13Method and depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
03/21/13Method for the treatment of a semiconductor wafer
03/21/13Method for the double-side polishing of a semiconductor wafer
03/21/13Method for the simultaneous double-side material-removing processing of at least three workpieces
03/14/13Single-layered winding of sawing wire with fixedly bonded abrasive grain for wire saws for slicing wafers from a workpiece
01/17/13Ring-shaped resistance heater for supplying heat to a growing single crystal
01/10/13Device and buffer-storing a multiplicity of wafer-type workpieces
12/13/12Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
10/25/12Susceptor for supporting a semiconductor wafer and depositing a layer on a front side of a semiconductor wafer
10/18/12Method and depositing a material layer originating from process gas on a substrate wafer
Patent Packs
10/11/12Method for cutting workpiece with wire saw
09/27/12Method for slicing wafers from a workpiece
09/27/12Method for slicing wafers from a workpiece
07/26/12Method for providing a respective flat working layer on each of the two working disks of a double-side processing apparatus
07/26/12Insert carrier and the simultaneous double-side material-removing processing of semiconductor wafers
07/12/12Method for cooling a workpiece made of semiconductor material during wire sawing
06/28/12Method for producing silicon single crystal ingot
06/28/12Method for recharging raw material polycrystalline silicon
06/21/12Method for cleaning a semiconductor wafer composed of silicon directly after a process of polishing of the semiconductor wafer
06/21/12Method for the simultaneous material-removing processing of both sides of at least three semiconductor wafers
06/14/12Method for producing a semiconductor wafer
04/26/12Support ring for supporting a semiconductor wafer composed of monocrystalline silicon during a thermal treatment, the thermal treatment of such a semiconductor wafer, and thermally treated semiconductor wafer composed of monocrystalline silicon
02/16/12Silicon wafer and producing it
02/09/12Silicon single crystal production method
02/09/12Silicon wafer and production method thereof
Patent Packs
02/09/12Method of forming strained semiconductor channel and semiconductor device
02/02/12Method and trimming the working layers of a double-side grinding apparatus
01/12/12Method and examining a semiconductor wafer
12/29/11Multilayered semiconductor wafer and process for manufacturing the same
12/29/11Semiconductor wafers of silicon and their production
12/29/11Monocrystalline semiconductor wafer comprising defect-reduced regions and producing it
12/15/11Method for producing semiconductor wafers composed of silicon
11/03/11Method for producing a multiplicity of semiconductor wafers by processing a single crystal
10/06/11Method for polishing a semiconductor wafer
10/06/11Method for the double-side polishing of a semiconductor wafer
09/15/11Method for polishing a semiconductor wafer
08/11/11Method of manufacturing dislocation-free single-crystal silicon by czochralski method
08/11/11Method for slicing a multiplicity of wafers from a crystal composed of semiconductor material
08/11/11Method for pulling a single crystal composed of silicon from a melt contained in a crucible, and single crystal produced thereby
08/04/11Method for producing a single crystal composed of silicon using molten granules
08/04/11Method for producing a semiconductor wafer composed of silicon with an epitaxially deposited layer
07/28/11Method for producing a semiconductor wafer
07/21/11Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
06/30/11Silicone wafer and production method therefor
06/30/11Silicon wafer and producing the same
06/30/11Silicon wafer and manufacturing method thereof
06/23/11Semiconductor layer structure and fabricating a semiconductor layer structure
06/16/11Graphite crucible and silicon single crystal manufacturing apparatus
06/09/11Method for producing a semiconductor wafer
06/02/11Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
05/12/11Method for producing a single crystal composed of silicon by remelting granules
05/12/11Method for polishing a semiconductor wafer
05/05/11Method of processing silicon wafer
04/28/11Device for producing a single crystal composed of silicon by remelting granules
04/28/11Method for polishing a semiconductor wafer
Social Network Patent Pack
04/28/11Method for producing a semiconductor wafer
04/14/11Epitaxial wafer and production method thereof
04/07/11Method for grinding a semiconductor wafer
04/07/11Method for polishing semiconductor wafers
03/31/11Epitaxially coated semiconductor wafer and device and producing an epitaxially coated semiconductor wafer
02/17/11Method for producing a polished semiconductor wafer
12/30/10Method for producing a semiconductor wafer
12/30/10Method for producing an epitaxially coated semiconductor wafer
12/30/10Method for the double sided polishing of a semiconductor wafer
12/30/10Polishing pad and polishing a semiconductor wafer
Patent Packs
12/30/10Method for the local polishing of a semiconductor wafer
12/30/10Method for polishing the edge of a semiconductor wafer
12/23/10Method for chemically grinding a semiconductor wafer on both sides
12/16/10Method for pulling a silicon single crystal
11/25/10Methods for producing epitaxially coated silicon wafers
11/18/10Method and an growing a silicon single crystal from a melt
11/18/10Method for the production of a semiconductor structure
11/18/10Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of sige deposited on the front side
09/23/10Unpolished semiconductor wafer and producing an unpolished semiconductor wafer
09/09/10Epitaxially coated silicon wafer and producing an epitaxially coated silicon wafer
09/02/10Semiconductor wafer and process for its production
08/26/10Method for producing epitaxially coated silicon wafers
08/26/10Method for identifying an incorrect position of a semiconductor wafer during a thermal treatment
08/19/10Carrier for holding semiconductor wafers during a double-side polishing of the semiconductor wafers
07/15/10Epitaxially coated silicon wafer and producing epitaxially coated silicon wafers
07/01/10Micro bubble generating device and silicon wafer cleaning apparatus
07/01/10Silicon wafer and manufacturing the same
07/01/10Silicon wafer and producing the same
06/24/10Annealed wafer and producing annealed wafer
06/24/10Process and producing a single crystal of semiconductor material
06/10/10Method for the treatment of a semiconductor wafer
06/10/10Cleaning semiconductor wafer
05/27/10Method for polishing a semiconductor wafer with a strained-relaxed si1-xgex layer
04/29/10Method for polishing both sides of a semiconductor wafer
04/15/10Method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers
03/18/10Device for pulling a single crystal
03/11/10Semiconductor wafer composed of monocrystalline silicon and producing itö
03/04/10Method for producing a semiconductor wafer
03/04/10Method for polishing a semiconductor wafer
02/25/10Silicon wafer and manufacturing the same
Patent Packs
02/18/10Method for producing a single crystal of semiconductor material
01/28/10Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it
01/21/10Method for depositing a layer on a semiconductor wafer by means of cvd and chamber for carrying out the method
12/31/09Multilayered semiconductor wafer and process for manufacturing the same
12/10/09Epitaxially coated silicon wafer with 110 orientation and producing it
11/12/09Method for producing an epitaxially coated semiconductor wafer
10/22/09Epitaxially coated silicon wafer and producing epitaxially coated silicon wafers
09/24/09Semiconductor wafer with a heteroepitaxial layer and a producing the wafer
09/24/09Semiconductor wafer with a heteroepitaxial layer and a producing the wafer
09/10/09Induction heating coil and melting granules composed of semiconductor material
09/10/09Semiconductor wafer of single crystalline silicon and process for its manufacture
08/13/09Semiconductor wafer, apparatus and process for producing the semiconductor wafer
08/13/09Tr razr sharpening system
06/11/09Method for the wet-chemical treatment of a semiconductor wafer
05/21/09Method for producing a semiconductor wafer with a polished edge
04/23/09Simultaneous double-side grinding of semiconductor wafers
04/23/09Carrier, coating a carrier, and the simultaneous double-side material-removing machining of semiconductor wafers
04/02/09Process and producing a single crystal of semiconductor material
03/19/09Process for cleaning a semiconductor wafer
03/12/09Semiconductor substrate and process for producing it
Social Network Patent Pack
02/05/09Single crystal and semiconductor wafer and producing a single crystal
01/28/10Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it
01/21/10Method for depositing a layer on a semiconductor wafer by means of cvd and chamber for carrying out the method







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