Real Time Touch



new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




Real Time Touch

Similar
Filing Names

Stmicroelectronics Sa
Stmicroelectronics Sas
Stmicroelectronics Sa_20100107
Stmicroelectronics Sas crolles
Stmicroelectronics Sas_20100121

Stmicroelectronics Sa patents


Recent patent applications related to Stmicroelectronics Sa. Stmicroelectronics Sa is listed as an Agent/Assignee. Note: Stmicroelectronics Sa may have other listings under different names/spellings. We're not affiliated with Stmicroelectronics Sa, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Stmicroelectronics Sa-related inventors


 new patent  Method for increasing the saturation of an image, and corresponding device

An image formed from pixels each having components defining a color is processed to implement an increase in the saturation of the image depending on a gain applied by a transfer function depending on the components of the color of each pixel. The gain of the transfer function is parameterized using at least one control parameter respectively dedicated to at least one type of reference image content. ... Stmicroelectronics Sa

 new patent  Memory cell

A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. ... Stmicroelectronics Sa

 new patent  Device and method for recognizing hand gestures using time-of-flight sensing

An electronic device includes at least one laser source configured to direct laser radiation toward a user's hand. Laser detectors are configured to receive reflected laser radiation from the user's hand. ... Stmicroelectronics Sa

Electronic device, in particular for protection against overvoltages

An electronic device is formed by a sequence of at least two thyristors coupled in series in a same conduction direction. Each thyristor has a gate of a first conductivity type. ... Stmicroelectronics Sa

Bipolar transistor and method of manufacturing the same

A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. ... Stmicroelectronics Sa

Method of manufacturing a waveguide

A method of manufacturing a waveguide in a glass plate is disclosed. The glass plate is scanned with a laser beam directed orthogonally to the glass plate to form a trench according to a pattern of the waveguide to be formed. ... Stmicroelectronics Sa

Method for manufacturing an optical device

The present invention relates to a method for manufacturing an optical device comprising forming a first trench in a glass plate and a second trench perpendicular to the first trench, wherein the first trench has an end opening into the second trench. The trenches are treated with hydrofluoric acid. ... Stmicroelectronics Sa

Color image sensor and method of manufacturing the same

A color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. ... Stmicroelectronics Sa

Device for protection against electrostatic discharges with a distributed trigger circuit

An esd protection device includes a mos transistor connected between a first terminal and a second terminal and having a gate region, source/drain region and a well region electrically coupled by a resistive-capacitive circuit configured to control turn on of the mos transistor in response to an esd event. The resistive-capacitive circuit has a common part with at least one of the source, gate or drain regions of the mos transistor and includes a capacitive element and a resistive element. ... Stmicroelectronics Sa

Fully integrated low-noise amplifier

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. ... Stmicroelectronics Sa

Method for managing the operation of a low-complexity synchronous retention flip-flop circuit, and corresponding circuit

A synchronous retention flip-flop circuit includes a first circuit module powered by an interruptible power source and a second circuit module powered by a permanent power source. The first circuit module includes a first latch circuit and a second latch circuit which are configured to store at least one datum while the interruptible power source is supplying power. ... Stmicroelectronics Sa

Control method for real-time scene detection by a wireless communication apparatus

A control method for real-time scene detection by a wireless communication apparatus equipped with at least one environmental measurement sensor is disclosed. A temporal adjustment of the instants of activation of the detection is based on measurement values delivered by the at least one environmental measurement sensor at instants of measurement.. ... Stmicroelectronics Sa

Memory cell

A microelectronic component is capable of being used as a memory cell. The component includes a semiconductor layer resting on an insulating layer and including a doped source region of a first conductivity type, a doped drain region of a second conductivity type, and an intermediate region, non-doped or more lightly doped, with the second conductivity type, than the drain region, the intermediate region including first and second portions respectively extending from the drain region and from the source region. ... Stmicroelectronics Sa

Substrate contact land for an mos transistor in an soi substrate, in particular an fdsoi substrate

A substrate contact land for a first mos transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second mos transistor without any pn junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second mos transistor forms the substrate contact land.. ... Stmicroelectronics Sa

02/15/18 / #20180047440

Method for autocorrective writing to a multiport static random access memory device, and corresponding device

An autocorrective writing to a multiport static random access memory device is performed on at least one multiport static random access memory cell circuit. A first datum is written to the multiport static random access memory cell circuit and a second datum stored in the circuit is read from the multiport static random access memory cell subsequent to writing. ... Stmicroelectronics Sa

02/08/18 / #20180039320

Method for adjusting at least one operating point of at least one integrated circuit of a system on a chip, and corresponding system on a chip

A system on a chip includes at least one integrated circuit that is configured to operate at least at one operating point. A monitoring circuit acquires at least the cumulative duration of activity of the at least one integrated circuit. ... Stmicroelectronics Sa

02/08/18 / #20180038907

Method for estimating an operating profile of an integrated circuit of a system-on-a-chip, and corresponding system-on-a-chip

A system-on-a-chip includes an integrated circuit and an estimation circuit. The estimation circuit operates to acquire at least one physical parameter representative of the use of the integrated circuit and determine an instantaneous state of aging of the integrated circuit as a function of the at least one physical parameter. ... Stmicroelectronics Sa

02/01/18 / #20180034505

Method of contactless communication between an object and a reader by active load modulation

A method can be used for contactless communication of an object with a reader using active load modulation. A main clock signal is generated within the object. ... Stmicroelectronics Sa

01/11/18 / #20180014006

Electronic device with an upscaling processor and associated methods

An electronic device includes a spad array and readout circuitry coupled thereto. The readout circuitry generates a depth map having a first resolution, and a signal count map having a second resolution greater than the first resolution. ... Stmicroelectronics Sa

01/11/18 / #20180012965

Transistor structure

A transistor includes a quasi-intrinsic region of a first conductivity type that is covered with an insulated gate. The quasi-intrinsic region extends between two first doped regions of a second conductivity type. ... Stmicroelectronics Sa

12/21/17 / #20170363507

Semiconductor device and wafer with reference circuit and related methods

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical duts, a first set of photodetectors coupled to outputs of the optical duts, an optical splitter coupled to inputs of the optical duts, and a second set of photodetectors coupled to the optical splitter. ... Stmicroelectronics Sa

12/14/17 / #20170358459

Method for patterning a thin film

A method for producing at least one pattern in a layer resting on a substrate, including: a) making amorphous at least one first block of an upper layer of crystalline material resting on a first amorphous supporting layer, while the crystalline structure of a second block of the upper layer that adjoins and is juxtaposed with the first block is preserved; b) partially recrystallizing the first block by using at least one side surface of the second block that is in contact with the first block as an area for the start of a recrystallization front, the partial recrystallization being carried out to preserve a region of amorphous material in the first block; c) selectively etching the amorphous material of the upper layer with respect to the crystalline material of the upper layer to form at least one first pattern in the upper layer.. . ... Stmicroelectronics Sa

12/14/17 / #20170356938

Method and system for determining the dynamic consumption of a module within an electronic device such as a system on chip

A reference clock signal of at least one module clock signal associated with each module is delivered. A measurement period is generated and a module whose consumption is to be determined is selected. ... Stmicroelectronics Sa

11/30/17 / #20170346825

Method and device for improving the protection of a multimedia signal against a malicious attack

A device protects an incoming multimedia signal with a protection that is controllable and configured for enabling or disabling an application for an interface protection on an outgoing signal coming from the incoming signal. An output interface is configured for delivering the outgoing signal on an output. ... Stmicroelectronics Sa

11/30/17 / #20170346443

Series of coupled synchronous oscillators

An integrated circuit includes at least two identical, synchronous and independent oscillator circuits that are coupled one to one in parallel with each other at homologous oscillating nodes of the respective oscillator circuits. The coupling in parallel is made using at least one coupling track that is configured so as to not introduce any phase shift or to introduce a very small phase shift.. ... Stmicroelectronics Sa

11/16/17 / #20170329941

Method and device for enhancing the protection of a signal, in particular a multimedia signal, against a malicious attack

A signal is protected against an attack by an enhancement process that checks the conformity of an actual state of the signal with respect to an expected state. A protective action is exercised on the signal if the actual state of the signal is not in conformity with the expected state, so as to neutralize or nullify said attack.. ... Stmicroelectronics Sa

10/05/17 / #20170288781

Higher order optical pam modulation using a mach-zehnder interferometer (mzi) type optical modulator having a bent optical path

An optical modulator includes an optical waveguide including at least a first pn junction phase shifter and a second pn junction phase shifter. A driver circuit drives operation of the first and second pn junction phase shifters in response to a pulse amplitude modulated (pam) analog signal having 2n levels. ... Stmicroelectronics Sa

10/05/17 / #20170288059

Enhanced substrate contact for mos transistor in an soi substrate, in particular an fdsoi substrate

An integrated electronic device includes a semiconductive film above a buried insulating layer that is situated above a supporting substrate. An active zone is delimited within the semiconductive film. ... Stmicroelectronics Sa

10/05/17 / #20170287618

Power transformer of the symmetric-asymmetric type with a fully-balanced topology

A transformer of the symmetric-asymmetric type includes comprising a primary inductive circuit and a secondary inductive circuit formed in a same plane by respective interleaved and stacked metal tracks. A first crossing region includes a pair of connection plates facing one another, with each connection plate having a rectangular shape that is wider than the metal tracks, and diagonally connected to tracks of the secondary inductive circuit.. ... Stmicroelectronics Sa

09/21/17 / #20170271777

Connector for plastic waveguide

A connector for a plastic waveguide includes a connector body having first and second openings aligned with one another. The first opening is configured to receive the plastic waveguide. ... Stmicroelectronics Sa

09/21/17 / #20170271392

Front-side imager having a reduced dark current on a soi substrate

A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.. ... Stmicroelectronics Sa

09/07/17 / #20170256625

Process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride

Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. ... Stmicroelectronics Sa

09/07/17 / #20170255591

Processing system with a secure set of executable instructions and/or addressing scheme

A method for securing a data processing system having a processing unit is disclosed. At least a group of n1 digital words of m1 bits is selected from among the set of m1 digital words. ... Stmicroelectronics Sa

08/17/17 / #20170236923

Bipolar transistor and method of manufacturing the same

A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. ... Stmicroelectronics Sa

08/17/17 / #20170236753

Process for fabricating an integrated circuit comprising at least one coplanar waveguide

An integrated circuit includes a silicon-on-insulator wafer and interconnect layer providing a support for a coplanar waveguide formed above a top side of the support. A through-silicon via is formed from a back side of the support and passing through the silicon-on-insulator wafer to reach the interconnect layer. ... Stmicroelectronics Sa

08/10/17 / #20170230014

Fully integrated low-noise amplifier

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. ... Stmicroelectronics Sa

07/13/17 / #20170199399

Optical modulator with automatic bias correction

An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. ... Stmicroelectronics Sa

06/29/17 / #20170185863

System and method for adaptive pixel filtering

Various embodiments provide an optimized image filter. The optimized image and video obtains an input image and selects a target pixel for modification. ... Stmicroelectronics Sa

06/22/17 / #the invention relates to an integrated circuit (1), comprising:

Stmicroelectronics Sa

. . ... Stmicroelectronics Sa

06/22/17 / #20170180644

Threshold determination in a ransac algorithm

A method determines a movement of an apparatus between capturing first and second images. The method includes testing model hypotheses of the movement by for example a ransac algorithm, operating on a set of first points in the first image and assumed corresponding second points in the second image to deliver the best model hypothesis. ... Stmicroelectronics Sa

06/22/17 / #20170179250

Process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride

Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. ... Stmicroelectronics Sa

06/22/17 / #20170178355

Determination of an ego-motion of a video apparatus in a slam type algorithm

A method estimates an ego-motion of an apparatus between a first image and a second image of a succession of images captured by the apparatus, in a slam type algorithm containing a localization part including the ego-motion estimating and a mapping part. The ego-motion comprises a 3d rotation of the apparatus and a position variation of the apparatus in the 3d space, and the ego-motion estimating comprises performing a first part and performing a second part after having performed the first part, the first part including estimating the 3d rotation of the apparatus and the second part including, the 3d rotation having been estimated, estimating the position variation of the apparatus in the 3d space.. ... Stmicroelectronics Sa

06/22/17 / #20170178347

Dynamic particle filter parameterization

Method of estimating a position variation of a motion of an apparatus between a first instant and a second instant, said motion including a rotation of the apparatus and said position variation, said position variation including a position and a velocity, wherein estimating said position variation comprises performing a particles filtering for estimating said position and velocity from the probabilistic-weighted average of the particles, said particles filter using a known estimation of said rotation and being parameterized for taking into account a quality of said rotation estimation.. . ... Stmicroelectronics Sa

06/22/17 / #20170177980

Method and device for generating binary descriptors in video frames

A method generates a binary descriptor associated with a given point in a current frame of a succession of video frames obtained by an apparatus such as an image sensor. The method includes determining a pattern of points pairs around said given point in the current frame, and performing intensity comparison processing between the two points of each pair. ... Stmicroelectronics Sa

05/11/17 / #20170133390

Method for producing one-time-programmable memory cells and corresponding integrated circuit

An integrated circuit includes a silicon-on-insulator substrate that includes a semiconductor film located above a buried insulating layer. A first electrode of a silicide material overlies the semiconductor film. ... Stmicroelectronics Sa

04/13/17 / #20170103913

Method for manufacture of a semiconductor wafer suitable for the manufacture of an soi substrate, and soi substrate wafer thus obtained

A semiconductor wafer suitable for fabricating an soi substrate is provided by: producing a first layer of polycrystalline semiconductor on a top side of a semiconductor carrier; then forming an interface zone on a top side of the first layer, wherein the interface zone has a structure different from a crystal structure of the first layer; and then producing a second layer of polycrystalline semiconductor on the interface zone.. . ... Stmicroelectronics Sa

03/30/17 / #20170090581

Device and method for identifying tap or wipe hand gestures using time-of-flight sensing

An electronic device includes a laser source configured to direct laser radiation toward a user's hand. A laser detector is configured to receive reflected laser radiation from the user's hand. ... Stmicroelectronics Sa

03/30/17 / #20170090580

Device and method for recognizing hand gestures using time-of-flight sensing

An electronic device includes at least one laser source configured to direct laser radiation toward a user's hand. Laser detectors are configured to receive reflected laser radiation from the user's hand. ... Stmicroelectronics Sa

03/02/17 / #20170059893

Electro-optic (e/o) device with an e/o amplitude modulator and associated methods

An electro-optic (e/o) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one e/o amplitude modulator is coupled to at least one of the first and second optical waveguide arms. ... Stmicroelectronics Sa

01/12/17 / #20170012043

Substrate contact land for an mos transistor in an soi substrate, in particular an fdsoi substrate

A substrate contact land for a first mos transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second mos transistor without any pn junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second mos transistor forms the substrate contact land.. ... Stmicroelectronics Sa

01/05/17 / #20170005517

Remotely powered contactless card

A contactless card is powered by an antenna connected to the input of a rectifier. An output of the rectifier is coupled to a processing unit that consumes a first current output from the rectifier. ... Stmicroelectronics Sa

01/05/17 / #20170003571

Integrated optical modulator of the mach-zehnder type

An integrated modulator of the mach-zehnder type includes two optical arms containing waveguides with pn junctions and biasing circuits for reverse biasing the pn junctions in response to a control signal. The two optical arms are situated within a semiconductor substrate of a first element that also has an interconnection region. ... Stmicroelectronics Sa








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Stmicroelectronics Sa in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Stmicroelectronics Sa with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###