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Stmicroelectronics crolles 2 Sas patents


Recent patent applications related to Stmicroelectronics crolles 2 Sas. Stmicroelectronics crolles 2 Sas is listed as an Agent/Assignee. Note: Stmicroelectronics crolles 2 Sas may have other listings under different names/spellings. We're not affiliated with Stmicroelectronics crolles 2 Sas, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Stmicroelectronics crolles 2 Sas-related inventors


Insulating wall and manufacturing the same

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected... Stmicroelectronics crolles 2 Sas

Resistive memory cell having a compact structure

The disclosure relates to a memory cell formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of a semiconductor, the memory cell comprising a selection transistor having a control gate and a first conduction terminal... Stmicroelectronics crolles 2 Sas

Testing circuit of a longtime-constant circuit stage and corresponding testing method

A method can be used for testing a charge-retention circuit for measurement of a time interval having a storage capacitor coupled between a first biasing terminal and a floating node, and a discharge element coupled between the floating node and a reference terminal. The discharge element is configured to implement... Stmicroelectronics crolles 2 Sas

Junction region between two waveguides and associated production

A photonic integrated device includes a first waveguide and a second waveguide. The first and second waveguides are mutually coupled at a junction region the includes a bulge region.... Stmicroelectronics crolles 2 Sas

Reading circuit with a shifting stage and corresponding reading method

A reading circuit for a charge-retention circuit stage is provided with a storage capacitor coupled between a first biasing terminal and a floating node, and a discharge element coupled between the floating node and a reference terminal. The reading circuit further has an operational amplifier having a first input terminal... Stmicroelectronics crolles 2 Sas

Backside illuminated photosensor element with light pipe and light mirror structures

A photosensor is formed within a semiconductor substrate layer having a front side and a back side. An isolation structure delimits an active region of the semiconductor substrate layer which includes a charge collecting region. The front side of semiconductor substrate layer includes a charge transfer circuit. A reflecting mirror... Stmicroelectronics crolles 2 Sas

Insulating wall and manufacturing the same

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected... Stmicroelectronics crolles 2 Sas

Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layer and the devices formed thereby

A photonic integrated circuit may include a silicon layer including a waveguide and at least one other photonic component. The photonic integrated circuit may also include a first insulating region arranged above a first side of the silicon layer and encapsulating at least one metallization level, a second insulating region... Stmicroelectronics crolles 2 Sas

Semiconductor device and wafer with reference circuit and related methods

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set... Stmicroelectronics crolles 2 Sas

Image sensor of global shutter type

Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated... Stmicroelectronics crolles 2 Sas

Integrated photonic device with improved optical coupling

A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further... Stmicroelectronics crolles 2 Sas

Mos transistor structure, in particular for high voltages using a technology of the silicon-on-insulator type

An integrated circuit is formed using a substrate of a silicon-on-insulator type that includes a carrier substrate and a stack of a buried insulating layer and a semiconductor film on the carrier substrate. A first region without the stack separates a second region that includes the stack from a third... Stmicroelectronics crolles 2 Sas

Phase-change memory cell having a compact structure

A memory cell includes a selection transistor having a control gate and a first conduction terminal connected to a variable-resistance element. The memory cell is formed in a wafer comprising a semiconductor substrate covered with a first insulating layer, the insulating layer being covered with an active layer made of... Stmicroelectronics crolles 2 Sas

Transformer of the balanced-unbalanced type

A transformer of the balanced-unbalanced type includes a primary inductive circuit and a secondary inductive circuit housed inside an additional inductive winding connected in parallel to the terminals of the secondary circuit and inductively coupled with the primary circuit and the secondary circuit.... Stmicroelectronics crolles 2 Sas

Mechanical structure comprising an actuator and mechanical amplification means, and production method

A mechanical structure comprising a stack including an active substrate and at least one actuator designed to generate vibrations at the active substrate, the stack comprises an elementary structure for amplifying the vibrations: positioned between the actuator and the active substrate, the structure designed to transmit and amplify the vibrations;... Stmicroelectronics crolles 2 Sas

An optically-based interstory drift meter system for rapid assessment of the earthquake response of building structures

A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set... Stmicroelectronics crolles 2 Sas

Opto electrical test measurement system for integrated photonic devices and circuits

An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe... Stmicroelectronics crolles 2 Sas

Method and device for monitoring a critical path of an integrated circuit

A device for monitoring a critical path of an integrated circuit includes a replica of the critical path formed by sequential elements mutually separated by delay circuits that are programmable though a corresponding main multiplexer. A control circuit controls delay selections made by each main multiplexer. A sequencing module operates... Stmicroelectronics crolles 2 Sas

Electro-optic device with multiple photonic layers and related methods

An electro-optic device may include a substrate layer, and a first photonic layer over the substrate layer and having a first photonic device. The electro-optic device may include a second photonic layer over the first photonic layer and having a second photonic device. The electro-optic device may include a dielectric... Stmicroelectronics crolles 2 Sas

Method for forming an electrical contact between a semiconductor film and a bulk handle wafer, and resulting structure

A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial... Stmicroelectronics crolles 2 Sas

Electronic device provided with a thermal dissipation member

An electronic device includes a support and a component in the form of an integrated circuit chip having a rear face mounted above a front face of the support and a front face opposite its rear face. A block is provided for at least partially encapsulating the component above the... Stmicroelectronics crolles 2 Sas

Multi-orientation integrated cell, in particular input/output cell of an integrated circuit

An integrated circuit includes at least one integrated cell disposed at a location of the integrated circuit. The at least one integrated cell may have two integrated devices coupled to at least one site of the integrated cell and a multiplexer, and the two integrated devices respectively oriented in two... Stmicroelectronics crolles 2 Sas

Higher order optical pam modulation using a mach-zehnder interferometer (mzi) type optical modulator having a bent optical path

An optical modulator includes an optical waveguide including at least a first PN junction phase shifter and a second PN junction phase shifter. A driver circuit drives operation of the first and second PN junction phase shifters in response to a pulse amplitude modulated (PAM) analog signal having 2n levels.... Stmicroelectronics crolles 2 Sas

Insulating wall and manufacturing the same

A pixel includes a semiconductor layer with a charge accumulation layer extending in the semiconductor layer. A transistor has a read region penetrating into said semiconductor layer down to a first depth. An insulating wall penetrates into the semiconductor layer from an upper surface and containing an insulated conductor connected... Stmicroelectronics crolles 2 Sas

Method of forming mos and bipolar transistors

Bipolar transistors and MOS transistors are formed in a common process. A semiconductor layer is arranged on an insulating layer. On a side of the bipolar transistors: an insulating region including the insulating layer is formed; openings are etched through the insulating region to delimit insulating walls; the openings are... Stmicroelectronics crolles 2 Sas

Method for fabrication of a field-effect with reduced stray capacitance

A method of fabrication, including the steps for supplying a substrate including a layer of semiconductor material covered by a sacrificial gate including a sacrificial gate insulator including a middle part, and edges covered by sacrificial spacers and having a thickness tox; removal of the sacrificial gate insulator and the... Stmicroelectronics crolles 2 Sas

Process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride

Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition,... Stmicroelectronics crolles 2 Sas

High-sensitivity electronic detector

An integrated electronic detector operates to detecting a variation in potential on an input terminal. The detector includes a MOS transistor having a drain forming an output. Variation in drain current is representative of the variation in potential. A bipolar transistor has a base forming the input terminal and a... Stmicroelectronics crolles 2 Sas

Method and device for testing a chain of flip-flops

A chain of flip-flops is tested by passing a reference signal through the chain. The reference signal is generated from a test pattern that is cyclically fed back at the cadence of a clock signal. The reference signal propagates through the chain of flip-flops at the cadence of the clock... Stmicroelectronics crolles 2 Sas

Image sensor

An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area. First and second insulated vertical electrodes electrically connected to each other are positioned opposite each other and delimit the storage area.... Stmicroelectronics crolles 2 Sas

Image sensor with reduced spectral and optical crosstalk and making the image sensor

An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer disposed above the photodiode, a dielectric region disposed above the antireflection layer, an optical filter disposed above the dielectric region, and a diffraction grating disposed in the antireflection... Stmicroelectronics crolles 2 Sas

Method of localized modification of the stresses in a substrate of the soi type, in particular fd soi type, and corresponding device

A substrate of the silicon on insulator type includes a semi-conducting film disposed on a buried insulating layer which is disposed on an unstressed silicon support substrate. The semi-conducting film includes a first film zone of tensile-stressed silicon and a second film zone of tensile-relaxed silicon. Openings through the buried... Stmicroelectronics crolles 2 Sas

Method for managing the operation of a test mode of a logic component with restoration of the pre-test state

A device may include a control circuit configured to place, after a normal mode operation of N flip-flops, the N flip-flops in a test mode in which the test input of the first flip-flop of the chain is intended to receive a first sequence of test bits. A memory may... Stmicroelectronics crolles 2 Sas

Three-dimensional integrated photonic structure with improved optical properties

An integrated electronic device includes a substrate having an opening extending therethrough. The substrate includes an interconnection network, and connections coupled to the interconnection network. The connections are to be fixed on a printed circuit board. An integrated photonic module is electrically connected to the substrate, with a portion of... Stmicroelectronics crolles 2 Sas

Electronic chip manufacturing method

Active areas of memory cells and active areas of transistors are delimited in an upper portion of a wafer. Floating gates are formed on active areas of the memory cells. A silicon oxide-nitride-oxide tri-layer is then deposited over the wafer and a protection layer is deposited over the silicon oxide-nitride-oxide... Stmicroelectronics crolles 2 Sas

07/06/17 / #20170192090

Time-of-flight detection pixel

A time-of-flight detection pixel includes a photosensitive area including a first doped layer and a charge collection area extending in the first doped layer. At least two charge storage areas extend from the charge collection area, each including a first well more heavily doped than the charge collection area and... Stmicroelectronics crolles 2 Sas

07/06/17 / #20170192170

Method for making photonic chip with multi-thickness electro-optic devices and related devices

A method is for making a photonic chip including EO devices having multiple thicknesses. The method may include forming a first semiconductor layer over a semiconductor film, forming a second semiconductor layer over the first semiconductor layer, and forming a mask layer over the second semiconductor layer. The method may... Stmicroelectronics crolles 2 Sas

07/06/17 / #20170194350

Low-noise mos transistors and corresponding circuit

An integrated circuit includes a MOS transistor situated in and on an active region of a semiconductor substrate. The active region is bounded by an insulating region for example of the shallow trench isolation type. The drain region of the transistor is positioned in the semiconductor substrate situated away from... Stmicroelectronics crolles 2 Sas

07/06/17 / #20170194368

Time-of-flight detection pixel

A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the... Stmicroelectronics crolles 2 Sas

07/06/17 / #20170194498

Method of forming strained mos transistors

A strained semiconductor layer is produced from a semiconductor layer extending on an insulating layer. A thermal oxidization is performed on the semiconductor layer across its entire thickness to form two bars extending in a direction of a transistor width. Insulating trenches are formed in a direction of a transistor... Stmicroelectronics crolles 2 Sas

06/29/17 / #20170184797

Electro-optic device with grating period variation and related methods

An electro-optic device may include a photonic chip including an insulator layer, and a semiconductor layer over the insulator layer and defining an optical grating coupler. The optical grating coupler may have a series of alternating curved ridges and valleys. The optical grating coupler has first and second sides and... Stmicroelectronics crolles 2 Sas

06/29/17 / #20170186623

Method for producing low-permittivity spacers

There is provided a method for manufacturing a transistor from a stack including at least one gate pattern comprising at least one flank, the method including forming at least one gate spacer over at least the flank of the gate pattern; and reducing, after a step of exposure of the... Stmicroelectronics crolles 2 Sas

06/29/17 / #20170186759

Integrated circuit and manufacturing the same

An integrated circuit includes a high-voltage MOS (HV) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the HV transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon. The capacitor includes a first electrode made of... Stmicroelectronics crolles 2 Sas

06/29/17 / #20170186789

Back-side illuminated pixel

A back-side illuminated pixel including a semiconductor substrate of a first conductivity type coated, on the front side of the pixel, with a three-layer assembly successively including a first layer of the second conductivity type, an insulating layer, and a second semiconductor layer. The three-layer assembly is interrupted in a... Stmicroelectronics crolles 2 Sas

06/29/17 / #20170186806

High-dynamic-range pixel

A pixel including a photodiode having a first pole coupled through a transfer MOS transistor to a node for sensing charges of a first type stored in the photodiode, and having a second pole connected to a storage capacitor and to a circuit for reading charges of a second type... Stmicroelectronics crolles 2 Sas

06/22/17 / #20170179035

Method of planarizing recesses filled with copper

A structure includes a substrate having an upper surface provided with recesses and coated with a continuous barrier layer topped with a continuous copper layer filling at least the recesses. The structure is planarized by a chemical-mechanical polishing of the copper, such a polishing being selective with respect to the... Stmicroelectronics crolles 2 Sas

06/22/17 / #20170179104

Routing for three-dimensional integrated structures

A three-dimensional integrated structure is formed by a first substrate with first components oriented in a first direction and a second substrate with second components oriented in a second direction. An interconnection level includes electrically conducting tracks that run in a third direction. One of the second direction and third... Stmicroelectronics crolles 2 Sas

06/22/17 / #20170179113

Method for fabricating a jfet transistor within an integrated circuit and corresponding integrated circuit

An integrated circuit of the BiCMOS type includes at least one vertical junction field-effect transistor. The vertical junction field-effect transistor is formed to include a channel region having a critical dimension of active surface that is controlled by photolithography.... Stmicroelectronics crolles 2 Sas

06/22/17 / #20170179196

Integrated circuit cointegrating a fet transistor and a rram memory point

an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.... Stmicroelectronics crolles 2 Sas

06/22/17 / #20170179250

Process for forming a layer of equiaxed titanium nitride and a mosfet device having a metal gate electrode including a layer of equiaxed titanium nitride

Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition,... Stmicroelectronics crolles 2 Sas

06/15/17 / #20170169696

Event detector

A detector of an event includes an electrical energy generator formed by a flexible piezoelectric element with a weight fastened to the flexible piezoelectric element that is biased with the weight in a position with the piezoelectric element flexed. In response to detection of the event, a trigger releases the... Stmicroelectronics crolles 2 Sas

06/08/17 / #20170162672

Sbfet transistor and corresponding fabrication process

A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a semiconductive layer positioned under the gate and having protrusions that protrude laterally with respect to the gate; anisotropically etching at least one of the protrusions by using... Stmicroelectronics crolles 2 Sas

06/01/17 / #20170153367

Plasmonic filter

An infrared high-pass plasmonic filter includes a copper layer interposed between two layers of a dielectric material. An array of patterned openings extend through the copper layer and are filled with the dielectric material. Each patterned opening is in the shape of a greek cross, with the arms of adjacent... Stmicroelectronics crolles 2 Sas

05/11/17 / #20170133297

Assembly of an integrated circuit chip and of a plate

An assembly includes an integrated circuit chip and a plate with at least one heat removal channel arranged between the chip and the plate. Metal sidewalls are formed to extend from one surface of the chip to an opposite surface of the plate. The assembly is encapsulated in a body... Stmicroelectronics crolles 2 Sas

05/11/17 / #20170134683

Global-shutter image sensor

A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into... Stmicroelectronics crolles 2 Sas

05/04/17 / #20170125474

Image sensor

An image sensor including a control circuit and a plurality of pixels, each pixel including: a photosensitive area, a substantially rectangular storage area adjacent to the photosensitive area, and a read area; first and second insulated vertical electrodes electrically connected to each other, opposite each other, and delimiting the storage... Stmicroelectronics crolles 2 Sas

04/27/17 / #20170117178

Process for producing a contact on an active zone of an integrated circuit, for example produced on an soi substrate, in particular an fdsoi substrate, and corresponding integrated circuit

An integrated circuit includes an active zone lying above a semiconductor substrate. A cavity borders the active zone and extends, in an insulating zone, as far as into the vicinity of a semiconductor region. An insulating multilayer is provided and an electrically conductive contact extends within the insulating multilayer to... Stmicroelectronics crolles 2 Sas

04/27/17 / #20170117296

Method of manufacturing a device with mos transistors

A device includes both low-voltage (LV) and high-voltage (HV) metal oxide semiconductor (MOS) transistors of opposite types. Gate stacks for the transistors are formed over a semiconductor layer. First spacers made of a first insulator are provided on the gate stacks of the LV and HV MOS transistors. Second spacers... Stmicroelectronics crolles 2 Sas

04/27/17 / #20170117823

System for converting thermal energy into electrical power

A system for converting thermal energy into electrical power includes a temperature-sensitive element held in a frame by its two ends between a heat source and a cold source producing a thermal gradient. A piezoelectric element is positioned between the frame and at least one end of the temperature-sensitive element.... Stmicroelectronics crolles 2 Sas

03/30/17 / #20170092678

Method of manufacturing a nanostructured spectral filter

A spectral filter is manufactured using a process wherein a first rectangular bar is formed within a first layer made of a first material, said first rectangular bar being made of a second material having a different optical index. The process further includes, in a second layer over the first... Stmicroelectronics crolles 2 Sas

03/16/17 / #20170075148

Integrated electro-optic modulator

An E/O phase modulator may include a waveguide having an insulating substrate, a single-crystal silicon strip and a polysilicon strip of a same thickness and doped with opposite conductivity types above the insulating substrate, and an insulating interface layer between the single-crystal silicon strip and polysilicon strip. Each of the... Stmicroelectronics crolles 2 Sas

03/16/17 / #20170076944

Method for causing tensile strain in a semiconductor film

d) performing recrystallisation of the regions rendered amorphous and the first semiconductor layer resulting in this first semiconductor layer being strained (FIG. 1A).... Stmicroelectronics crolles 2 Sas

03/09/17 / #20170069764

Mos transistor and manufacturing the same

A MOS transistor includes a semiconductor layer resting on an insulator and having a substantially planar upper surface. The semiconductor layer extends down to a first depth in the channel region, and down to a second depth, greater than the first depth, in the source and drain regions. In the... Stmicroelectronics crolles 2 Sas

03/02/17 / #20170059774

Integrated circuit including an active device for confinement of a light flux

An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall... Stmicroelectronics crolles 2 Sas

03/02/17 / #20170059776

Arrayed waveguide grating multiplexer-demultiplexer and related control method

An arrayed waveguide grating multiplexer/demultiplexer includes an array of optical waveguides ordered in sequence from a shortest waveguide up to a longest waveguide, and identical phase shifters configured to be controlled by a same control signal. Each phase shifter increases/decreases an optical path of an optical waveguide by the same... Stmicroelectronics crolles 2 Sas

Patent Packs
03/02/17 / #20170059793

Method for aligning electro-optic device with optical fiber array with optical grating couplers

A method is for aligning an electro-optic device. The method may include initially positioning an optical fiber array adjacent to optical grating couplers, and actively aligning the optical fiber array relative to the optical grating couplers in a yaw direction and a roll direction to determine a yaw and roll... Stmicroelectronics crolles 2 Sas

03/02/17 / #20170059893

Electro-optic (e/o) device with an e/o amplitude modulator and associated methods

An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler.... Stmicroelectronics crolles 2 Sas

03/02/17 / #20170062424

Formation of ohmic contacts for a device provided with a region made of iii-v material and a region made of another semiconductor material

b) carrying out at least one thermal annealing so as to form on the first semiconductor regions first contact zones and on the second semiconductor regions second contact zones based on a semiconductor and metal compound while increasing the N-doping of the III-V material.... Stmicroelectronics crolles 2 Sas

03/02/17 / #20170062507

Image sensor with reduced spectral and optical crosstalk

An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include... Stmicroelectronics crolles 2 Sas

02/09/17 / #20170040285

Wafer planarization method

A planar layer of a selected material is formed on a surface of a wafer exhibiting recesses. The formation process including the steps of: a) depositing a first layer of the selected material on the surface; b) performing a chemical mechanical polishing of the first layer; c) depositing a second... Stmicroelectronics crolles 2 Sas

02/02/17 / #20170033174

Electrode for a metal-insulator-metal structure, capacitor of metal-insulator-metal type, and fabricating one such electrode and one such capacitor.

The electrode is used to fabricate a capacitor of Metal-Insulator-Metal type.... Stmicroelectronics crolles 2 Sas

01/05/17 / #20170003449

Electro-optic device with semiconductor junction area and related methods

An electro-optic device may include a photonic chip having an optical grating coupler at a surface. The optical grating coupler may include a first semiconductor layer having a first base and first fingers extending outwardly from the first base. The optical grating coupler may include a second semiconductor layer having... Stmicroelectronics crolles 2 Sas

01/05/17 / #20170003462

Method for aligning electro-optic device with optical fiber array with optical grating couplers

A method is for aligning an electro-optic device. The method may include initially positioning an optical fiber array adjacent to optical grating couplers, and actively aligning the optical fiber array relative to the optical grating couplers in a yaw direction and a roll direction to determine a yaw and roll... Stmicroelectronics crolles 2 Sas

01/05/17 / #20170003571

Integrated optical modulator of the mach-zehnder type

An integrated modulator of the Mach-Zehnder type includes two optical arms containing waveguides with PN junctions and biasing circuits for reverse biasing the PN junctions in response to a control signal. The two optical arms are situated within a semiconductor substrate of a first element that also has an interconnection... Stmicroelectronics crolles 2 Sas

01/05/17 / #20170005129

Image sensor device with first and second source followers and related methods

An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor... Stmicroelectronics crolles 2 Sas

01/05/17 / #20170005130

Image sensor device with first and second source followers and related methods

An image sensor device may include an array of image sensing pixels arranged in rows and columns. Each image sensing pixel may include an image sensing photodiode, a first source follower transistor coupled to the image sensing photodiode, and a switch coupled to the image sensing photodiode. Each image sensor... Stmicroelectronics crolles 2 Sas








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