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Stmicroelectronics tours Sas
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Stmicroelectronics tours Sas patents

Recent patent applications related to Stmicroelectronics tours Sas. Stmicroelectronics tours Sas is listed as an Agent/Assignee. Note: Stmicroelectronics tours Sas may have other listings under different names/spellings. We're not affiliated with Stmicroelectronics tours Sas, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Stmicroelectronics tours Sas-related inventors

Putting into service of a lithium ion battery

A thin-film lithium ion battery includes a negative electrode layer, a positive electrode layer, an electrolyte layer disposed between the positive and negative electrode layers, and a lithium layer with lithium pillars extending therefrom formed in the negative electrode layer adjoining the electrolyte layer.... Stmicroelectronics tours Sas

Overvoltage protection device

An electrostatic discharge protection device includes the following successive structures: a very heavily-doped semiconductor substrate of a first conductivity type; a first heavily-doped buried semiconductor layer of a second conductivity type; a first lightly-doped semiconductor layer of the second conductivity type; and a second heavily-doped layer of the first conductivity... Stmicroelectronics tours Sas

Assembly of electronic components

Identical planar electronic components are stacked in an assembly. Each component has two contact metallizations positioned on edges of a same surface of the component. The components are stacked along a common axis. Each successive component is rotated about the common axis by a fixed angle. A value of the... Stmicroelectronics tours Sas

Ac/dc converter with inrush current limitation

An AC/DC converter includes: a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for supplying a DC voltage. A rectifying bridge includes input terminals respectively coupled to the first terminal and the second terminal, and output terminals respectively coupled... Stmicroelectronics tours Sas

Vertical semiconductor structure

A diode includes upper and lower electrodes and first and second N-type doped semiconductor substrate portions connected to the lower electrode. A first vertical transistor and a second transistor are formed in the first portion and series-connected between the electrodes. The gate of the first transistor is N-type doped and... Stmicroelectronics tours Sas

Power component protected against overheating

A triac has a vertical structure formed from a silicon substrate having an upper surface side. A main metallization on the upper surface side has a first portion resting on a first region of a first conductivity type formed in a layer of a second conductivity type. A second portion... Stmicroelectronics tours Sas

Electrostatic discharge protection device having an adjustable triggering threshold

An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.... Stmicroelectronics tours Sas

Vertical power component

A vertical power component includes a doped silicon substrate of a first conductivity type. A local well of a second conductivity type extends from an upper surface of the substrate. A passivation structure coats a peripheral region of the upper surface side of the substrate surrounding the well. This passivation... Stmicroelectronics tours Sas

Electrical connector

An electrical connector includes a frame delimiting an elongated open cavity, and having two parallel long sides provided with contact areas capable of cooperating with contact areas of a complementary electrical connector. Each long side is formed of a multilayer printed circuit board.... Stmicroelectronics tours Sas

Device for controlling a capacitor having an adjustable capacitance

A first capacitor has a capacitance adjustable to a set point value by application of a bias voltage. A second capacitor also has a capacitance adjustable to a set point value by application of a bias voltage. The first and second capacitors are arranged to receive the same bias voltage... Stmicroelectronics tours Sas

Rectifying circuit with thyristors

A rectifying circuit including: between a first terminal of application of an AC voltage and a first rectified voltage delivery terminal, at least one first diode; and between a second terminal of application of the AC voltage and a second rectified voltage delivery terminal, at least one first anode-gate thyristor,... Stmicroelectronics tours Sas

A rectifier bridge circuit, corresponding apparatus and method

A rectifier bridge circuit includes a first SCR/IGBT switch and a second SCR/IGBT switch coupled to a circuit input to receive an ac input voltage. The first and second SCR/IGBT switches are alternatively switchable to generate a rectified voltage at a circuit output. Control currents coupled to control terminals of... Stmicroelectronics tours Sas

Surface-mount electronic component

A surface-mount chip is formed by a silicon substrate having a front surface and a side. The chip includes a metallization intended to be soldered to an external device. The metallization has a first portion covering at least a portion of the front surface of the substrate and a second... Stmicroelectronics tours Sas

System for balancing the voltage of series-connected semiconductor elements

A circuit for balancing a voltage across a semiconductor element series-connected with other semiconductor elements of the same type may include a comparator configured to compare data representative of a voltage across the semiconductor element with a reference voltage, and a resistive element of adjustable value and configured to be... Stmicroelectronics tours Sas

Method for treating a gallium nitride layer comprising dislocations

A method is for treating a doped gallium nitride substrate of a first conductivity type, having dislocations emerging on the side of at least one of its surfaces. The method may include: a) forming, where each dislocation emerges, a recess extending into the substrate from the at least one surface;... Stmicroelectronics tours Sas

High-voltage vertical power component

A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon... Stmicroelectronics tours Sas

Battery encapsulaton method

A battery encapsulation method includes disposing an active battery layer on each of a plurality of battery substrates, with each battery substrate having a greater area than its corresponding active battery layer. The plurality of battery substrates are attached to an interposer having a greater area than an aggregate area... Stmicroelectronics tours Sas

High-voltage gallium nitride schottky diode

A Schottky diode is formed on a silicon support. A non-doped GaN layer overlies the silicon support. An AlGaN layer overlies the non-doped GaN layer. A first metallization forming an ohmic contact and a second metallization forming a Schottky contact are provided in and on the AlGaN layer. First vias... Stmicroelectronics tours Sas

Self-supporting thin-film battery and manufacturing such a battery

A self-supporting thin-film battery is manufacture by forming on the upper surface of a support substrate a vertical active stack having as a lower layer a metal layer having formed therein a first contact terminal of a first polarity of the battery and having formed therein as an upper layer... Stmicroelectronics tours Sas

Protection of a telephone line against overvoltages

A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to... Stmicroelectronics tours Sas

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Stmicroelectronics tours Sas in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Stmicroelectronics tours Sas with additional patents listed. Browse our Agent directory for other possible listings. Page by