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Sumco Corporation patents


Recent patent applications related to Sumco Corporation. Sumco Corporation is listed as an Agent/Assignee. Note: Sumco Corporation may have other listings under different names/spellings. We're not affiliated with Sumco Corporation, we're just tracking patents.

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Method for regenerating member within silicon single crystal pulling apparatus

In a regeneration method of the present invention, a member, to the surface of which silicon or the like adheres, is subjected to a heat treatment for at least two hours in an inert gas atmosphere at a pressure of 2.67 kpa or less so that the surface of the member is at a temperature at which siox and/or silicon metal adhering to the surface starts to sublimate or higher but less than a temperature at which the member starts thermal deformation and/or thermal alteration, thereby removing silicon or the like adhering to the surface of the member by means of sublimation.. . ... Sumco Corporation

Semiconductor wafer evaluation standard setting method, semiconductor wafer evaluation method, semiconductor wafer manufacturing process evaluation method, and semiconductor wafer manufacturing method

The method of setting the evaluation standard of a semiconductor wafer includes setting the a and b on the basis of an abnormal substances overlooking rate “a” specific to the light-scattering type surface inspection apparatus specified by an apparatus-induced abnormal substances overlooking rate Φ due to the light-scattering type surface inspection apparatus and a probabilistic abnormal substances overlooking rate, in which a is the number of times of inspection, b is an abnormal substances detection threshold, the apparatus-induced abnormal substances overlooking rate Φ is higher as the target abnormal substances size to be detected is smaller, and the probabilistic abnormal substances overlooking rate is lower as the number of times of inspection increases.. . ... Sumco Corporation

Seed crystal holder for pulling up single crystal and method of manufacturing silicon single crystal using the same

A seed crystal holder for pulling up a single crystal is made of a carbon fiber-reinforced carbon composite material, and has a substantially cylindrical shape with a hollow space having a shape matching an outer shape of a substantially rod-shaped seed crystal. A direction of carbon fibers at a part in contact with at least an outer peripheral surface of the seed crystal has isotropy as viewed from a central axis of the hollow space.. ... Sumco Corporation

Susceptor, epitaxial growth device, and epitaxial wafer

Provided is a susceptor, capable of preventing occurrence of deep scratches on the back surface and beveled part of a wafer attributable to contact with lift pins or the susceptor, and reducing dust generation from the susceptor. A susceptor according to one embodiment of this disclosure includes a susceptor main body, and arc-shaped members. ... Sumco Corporation

Epitaxial growth device, production method for epitaxial wafer, and lift pin for epitaxial growth device

An epitaxial growth device includes; a chamber; a susceptor; a supporting shaft, having a main column located coaxially with the center of the susceptor and supporting arms; and a lift pin, at least the surface layer region of the lift pin is made of a material having a hardness lower than the susceptor, the lift pin has a straight trunk part upper region configured to pass through the through-hole of the susceptor and having a surface roughness of from not less than 0.1 μm to not more than 0.3 μm, and the lift pin has a straight trunk part lower region configured to pass through the through-hole of the supporting arm and having a surface roughness of from not less than 1 μm to not more than 10 μm.. . ... Sumco Corporation

Silicon epitaxial wafer and method of producing same

A silicon single crystal is pulled up such that nitrogen concentration of the crystal is 1×1011 to 2×1013 atoms/cm3, the crystal cooling rate is about 4.2° c./min at a temperature of a silicon melting point to 1350° c. And is about 3.1° c./min at a temperature of 1200° c. ... Sumco Corporation

Susceptor and epitaxial growth device

Provided is a susceptor, capable of preventing occurrence of scratches on the back surface of a wafer attributable to lift pins, and reducing unevenness of the in-surface temperature distribution of the wafer. A susceptor according to one embodiment of this disclosure has a susceptor main body and a plate-shaped member, and when a wafer is conveyed, the front surface of the plate-shaped member ascended by lift pins supports the central part of the back surface of the wafer by surface contact. ... Sumco Corporation

Manufacturing method of monocrystalline silicon and monocrystalline silicon

A smonocrystalline silicon include a straight body formed without generating a remelt growth area of 200 μm or more in a height in a growth direction. Growth striations, which are formed radially across the straight body, include a growth striation with an outer end interrupted by another growth striation not to reach a peripheral portion of the straight body. ... Sumco Corporation

Method for manufacturing epitaxial silicon wafer

A method includes: a step of forming an oxide film on a backside of a silicon wafer; a step of removing the oxide film present at an outer periphery of the silicon wafer; a step of argon annealing in which a heat treatment is performed in an argon gas atmosphere; and a step of forming an epitaxial film on a surface of the silicon wafer, the step of forming the epitaxial film including: a step of pre-baking in which the silicon wafer is subjected to a heat treatment in an gas atmosphere containing hydrogen and hydrogen chloride to etch an outer layer of the silicon wafer; and a step of growing the epitaxial film on the surface of the silicon wafer.. . ... Sumco Corporation

Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same

An apparatus for manufacturing a silicon single crystal is provided. The apparatus comprises a chamber (11), a quarts crucible (21) provided in the chamber so as to be rotatable and movable upward and downward and store a silicon melt, a first heater (25) for melting a silicon raw material stored in the crucible, and a pulling mechanism (32) provided in the chamber so as to be rotatable and movable upward and downward. ... Sumco Corporation

Vitreous silica crucible and evaluation method of the same

A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.. . ... Sumco Corporation

Method of evaluating semiconductor substrate and method of manufacturing semiconductor substrate

Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.. . ... Sumco Corporation

Single-wafer processing method of polishing one side of semiconductor wafer and single-wafer processing apparatus for polishing one side of semiconductor wafer

An object is to provide a single-wafer processing single-side polishing method and a single-wafer processing single-side polishing apparatus, which increase the flatness of a semiconductor wafer and reduce variations in flatness. The single-wafer processing single-side polishing method includes a polishing step of polishing a semiconductor wafer; and a shifting step of transferring the semiconductor wafer from a polishing plate to a tray outside the polishing plate, moving the relative position of the semiconductor wafer and the polishing head in the rotation direction of the polishing head, and then holding the semiconductor wafer with the polishing head. ... Sumco Corporation

Method for cleaning single crystal pulling apparatus, cleaning tool for use therein, and method for manufacturing single crystal

A method for cleaning a single crystal pulling apparatus according to the present invention includes preparing a dummy crucible that simulates a crucible and includes a dummy liquid surface simulating a liquid surface of material melt in the crucible and a first dummy ingot simulating a single crystal ingot in process of being pulled up from the liquid surface of the material melt, and supplying gas in a state in which the dummy crucible is installed in a decompressed chamber of the single crystal pulling apparatus to generate a flow of the gas affected by the dummy crucible and detach foreign substances adhering to a wall surface of the chamber or parts in the chamber.. . ... Sumco Corporation

12/07/17 / #20170352545

Method of producing semiconductor epitaxial wafer and method of producing solid-state image sensor

Provided is a method of producing a semiconductor epitaxial wafer having enhanced gettering ability. The method of producing a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a modified layer that is located in a surface portion of the semiconductor wafer and that includes a constituent element of the cluster ions in solid solution; and a second step of forming an epitaxial layer on the modified layer of the semiconductor wafer. ... Sumco Corporation

11/30/17 / #20170343528

Method for evaluating abrasive grains, and method for manufacturing silicon wafer

An evaluation method of abrasive grains used in an ingot-cutting slurry includes: an evaluation solution preparation step in which abrasive grains including polishing grains and impurities are dissolved in a solvent to prepare an evaluation solution; a sedimentation step in which a container containing the evaluation solution is left still to settle the polishing grains; a measurement step in which a turbidity of supernatant of the evaluation solution is measured using the measurement device; and an estimation step in which an amount of the impurities is estimated based on the measurement result of the turbidity of the supernatant.. . ... Sumco Corporation

11/23/17 / #20170338117

Method for manufacturing epitaxial silicon wafer and vapor phase growth device

A vapor deposition apparatus includes an exhaust regulator provided in an exhaust pipe to regulate exhaust of the reaction chamber and including: a hollow frustum upstream baffle having a larger first opening near a reaction chamber than a second opening near an exhaust device; and a hollow frustum downstream baffle provided near the exhaust device with respect to the upstream baffle and having a larger third opening near the reaction chamber than a fourth opening near the exhaust device. The upstream baffle and downstream baffle are designed so that b/a and c/a are 0.33 or less, at least one of b/a and c/a is 0.26 or less, and (b+c)/a is 0.59 or less, where an inner diameter of the exhaust pipe and diameters of the first and third openings are a, a diameter of the second opening is b and a diameter of the fourth opening is c.. ... Sumco Corporation

11/23/17 / #20170338098

Manufacturing method of monocrystalline silicon and monocrystalline silicon

A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.. . ... Sumco Corporation

11/16/17 / #20170330783

Vacuum chuck, beveling/polishing device, and silicon wafer beveling/polishing method

A vacuum chuck includes: a vacuum chuck stage having a circular vacuum surface; a vacuum protection pad provided to the vacuum surface; an annular or arc-shaped concave portion dividing the vacuum surface into a central region located closer to a center of the vacuum surface and an outer circumferential region located on an outer circumferential side; and radially-extending concave portions formed in the central region. The vacuum protection pad has through holes in communication with the radially-extending concave portions, and the vacuum protection pad is bonded to the vacuum surface at the central region excluding the radially-extending concave portions.. ... Sumco Corporation

11/16/17 / #20170327966

Method for producing single crystal

A manufacturing method of a monocrystal includes: a shoulder-formation step to form a shoulder of the monocrystal; and a straight-body-formation step to form a straight body of the monocrystal, in which, in the shoulder-formation step, providing that a distance from a lowermost portion inside the crucible to a top surface of the dopant-added melt is defined as h (mm) and a radius of the top surface of the dopant-added melt is defined as r (mm), the shoulder starts to be formed in a condition that a relationship of 0.4<h/r<0.78 is satisfied.. . ... Sumco Corporation

10/12/17 / #20170292901

Destructive inspection method and quality determination method for vitreous silica crucible

A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible.. ... Sumco Corporation

10/12/17 / #20170292204

Manufacturing method and manufacturing system for silicon single crystal

Spatial coordinates of multiple points on an inner surface of a vitreous silica crucible are measured prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible using a combination of polygons having vertex coordinates constituted by the respective measured points is specified (s11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (s12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (s13); a weight of the silicon melt having the volume is obtained (s14); raw material having the weight is filled in the vitreous silica crucible (s15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (s17).. . ... Sumco Corporation

10/05/17 / #20170283980

Method for producing single crystal and method for producing silicon wafer

A method for producing a single crystal includes: bringing a seed crystal into contact with a dopant-added melt, in which a red phosphorus is added to a silicon melt, such that a resistivity of the single crystal is 0.9 mΩ·cm or less and subsequently pulling up the seed crystal, to form a straight body of the single crystal; and withdrawing the single crystal from the dopant-added melt in a state that a temperature of an upper end of the straight body is 590 degrees c. Or more.. ... Sumco Corporation

09/28/17 / #20170278741

Method of manufacturing silicon on insulator substrate

A method of manufacturing a silicon on insulator substrate includes: preparing a semiconductor substrate including a rear side semiconductor layer, an insulating layer, and a front side semiconductor layer, a first surface of the insulating layer being in contact with a surface of the rear side semiconductor layer, and a first surface of the front side semiconductor layer being in contact with a second surface of the insulating layer; forming a high concentration region in which an impurity concentration is increased in the front side semiconductor layer, by injecting impurities into the front side semiconductor layer; heating the semiconductor substrate having the high concentration region; and epitaxially growing an additional semiconductor layer on a second surface of the front side semiconductor layer of the heated semiconductor substrate, the additional semiconductor layer having a lower impurity concentration than the high concentration region.. . ... Sumco Corporation

09/07/17 / #20170256668

Semiconductor epitaxial wafer and method of producing the same, and method of producing solid-state image sensing device

To provide a semiconductor epitaxial wafer having an epitaxial layer with excellent crystallinity, the semiconductor epitaxial wafer is a semiconductor epitaxial wafer in which an epitaxial layer is formed on a surface of a semiconductor wafer, and the peak of the hydrogen concentration profile detected by sims lies in a surface portion of the semiconductor wafer on the side where the on the side where the epitaxial layer is formed.. . ... Sumco Corporation

09/07/17 / #20170252891

Method for polishing silicon wafer

A method of a polishing a wafer includes: a first polishing step of polishing a surface of the wafer while supplying a rough polishing liquid onto a polishing surface of a rough polishing cloth; subsequent to the first polishing step, a protection film formation step of supplying a protection film formation solution containing a water-soluble polymer to the rough polishing cloth after being used in the first polishing step and bringing the protection film formation solution into contact with the polished surface of the wafer to form a protection film on the polished surface; and a second polishing step of polishing the surface of the wafer where the protection film is formed while supplying a finish polishing liquid to a polishing surface of a finish polishing cloth different from the rough polishing cloth.. . ... Sumco Corporation

08/03/17 / #20170218534

Quality-evaluated vitreous silica crucible

A quality-evaluated vitreous silica crucible for pulling silicon single crystal is provided, wherein an inner surface of the vitreous silica crucible has regions where surface defects including brown rings are to be generated when pulling silicon single crystal. The regions are distinguished using an infrared absorption spectrum or a raman shift of the regions, wherein a position of each region and/or a density of the regions are/is specified.. ... Sumco Corporation

06/08/17 / #20170157740

Grinding apparatus and grinding method

A double-head grinding machine includes: a spindle driving portion configured to rotate a spindle to which a grinding wheel is attachable; a moving portion configured to move the spindle driving portions toward and away from a wafer; and an inclination measuring portion configured to measure a change in an inclination of the spindle in association with a movement of the spindle driving portions.. . ... Sumco Corporation

04/06/17 / #20170096747

Silicon single crystal manufacturing method

A silicon single crystal manufacturing method in which the distance between the heat shield and the melt level of the melt can be regulated in a high precision. The real image includes at least the circular opening of the heat shield provided in such a way that the heat shield covers a part of the melt level of the silicon melt. ... Sumco Corporation

03/30/17 / #20170088974

Method for manufacturing single crystal

A target value of a pull-up speed of the single crystal is set in advance before starting pulling-up of the single crystal for every predetermined pull-up length, the pull-up speed moving average value is calculated from actual values of the pull-up speeds measured from a time point that pulling-up of a predetermined length of the single crystal has been started until the current time point, a corrected value of the pull-up speed target value at a current time point is calculated and the single crystal is pulled up on the basis of this corrected value. When α is a past pull-up length and β is a future pull-up length, a pull-up length (α+β) used for calculating the corrected value of the pull-up speed target value is changed with an actual value of the single crystal diameter.. ... Sumco Corporation

03/30/17 / #20170088973

Inspection method of vitreous silica crucible

A method of manufacturing a vitreous silica crucible includes an inspection method comprising: a measurement step of measuring an infrared absorption spectrum or a raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether a surface defect region is generated or not in the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.. . ... Sumco Corporation

03/16/17 / #the present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability.

Sumco Corporation

. . ... Sumco Corporation

03/16/17 / #20170076959

Epitaxial silicon wafer and method for producing the epitaxial silicon wafer

A method for producing an epitaxial silicon wafer, including a preliminary thermal treatment step of subjecting a silicon wafer to thermal treatment for increasing a density of oxygen precipitates, the silicon wafer being one that has an oxygen concentration in a range of 9×1017 atoms/cm3 to 16×1017 atoms/cm3, contains no dislocation cluster and no cop, and contains an oxygen precipitation suppression region, and an epitaxial layer forming step of forming an epitaxial layer on a surface of the silicon wafer after the preliminary thermal treatment step. The production method further includes a thermal treatment condition determining step of determining a thermal treatment condition in the preliminary thermal treatment step, based on a ratio of the oxygen precipitation suppression region of the silicon wafer before the preliminary thermal treatment step is carried out.. ... Sumco Corporation

03/16/17 / #20170076437

Method and apparatus for manufacturing single crystal

Disclosed herein is a method for manufacturing a single crystal, the method includes: photographing an image of a boundary portion between the single crystal and a melt by a camera during a single crystal pull-up process according to a czochralski method; comparing at least one pixel included in a left side region with respect to an extension line of a pull-up shaft of the single crystal and at least one pixel included in a right side region with respect to the extension line; and determining an abnormality in a luminance distribution of the image from a result of the comparing.. . ... Sumco Corporation

03/09/17 / #20170067181

Production method of epitaxial silicon wafer, vapor deposition equipment and valve

A method for producing an epitaxial silicon wafer comprises applying a vapor deposition on a silicon wafer to produce the epitaxial silicon wafer. Vapor deposition equipment, in which the vapor deposition is conducted, at least includes a chamber, and a hydrogen-chloride-gas supply apparatus that is in communication and connected with an inside of the chamber to supply hydrogen chloride gas into the chamber. ... Sumco Corporation

03/09/17 / #20170066686

Vitreous silica crucible and method of manufacturing the same

A method of manufacturing a vitreous silica crucible includes: a taking-out process of taking out the vitreous silica crucible from the mold, a honing process of removing the unfused silica powder layer on the outer surface of the vitreous silica crucible, and further comprising, after the taking-out process and before the honing process, a marking process of marking an identifier comprised of one or more groove line on the outer surface of the vitreous silica crucible, wherein the groove line after the honing process has a cross-sectional shape of an inverse trapezoid and a depth of 0.2 to 0.5 mm, and a width of 0.8 mm or more at the opening of the groove line. The groove line is formed by repeating shifting a focal point of a laser.. ... Sumco Corporation

03/02/17 / #20170062268

Soi wafer manufacturing process and soi wafer

Provided is an soi wafer manufacturing method that allows production of an soi wafer having a high gettering ability and a small resistance variance in a thickness direction of an active layer, at high productivity. The soi wafer manufacturing method includes a first step of implanting light element ions to a surface of at least one of a first substrate and a second substrate to form, on the at least one of the first substrate and the second substrate, a modified layer in which the light element ions are present in solid solution, a second step of forming an oxide film on a surface of at least one of the first substrate and the second substrate, a third step of bonding the first substrate and the second substrate according to a normal-temperature vacuum bonding method, and a fourth step of obtaining an active layer by thinning the first substrate.. ... Sumco Corporation

03/02/17 / #20170062267

Soi wafer manufacturing process and soi wafer

Provided is an soi wafer manufacturing method that allows production of an soi wafer having a high gettering ability and a small resistance variance in a thickness direction of an active layer, at high productivity. The soi wafer manufacturing method includes a first step of implanting light element ions to a surface of at least one of a first substrate and a second substrate to form, on the at least one of the first substrate and the second substrate, a modified layer in which the light element ions are present in solid solution, a second step of forming an oxide film on a surface of at least one of the first substrate and the second substrate, a third step of bonding the first substrate and the second substrate according to a bonding thermal processing, and a fourth step of obtaining an active layer by thinning the first substrate.. ... Sumco Corporation

02/16/17 / #20170044688

Silicon wafer and method for manufacturing same

A manufacturing method of this invention includes: a step of slicing a silicon single crystal containing boron as an acceptor and obtaining a non-heat-treated silicon wafer, a step of determining a boron concentration with respect to the non-heat-treated silicon wafer, and a step of determining an oxygen donor concentration with respect to the non-heat-treated silicon wafer, in which a determination as to whether or not to perform a heat treatment at a temperature of 300° c. Or more on the non-heat-treated silicon wafer is made based on a boron concentration determined in the step of determining a boron concentration, and an oxygen donor concentration determined in the step of determining an oxygen donor concentration. ... Sumco Corporation

02/02/17 / #20170029975

Manufacturing method of silicon monocrystal

A manufacturing method of a silicon monocrystal uses a monocrystal pulling-up apparatus including: a chamber; a crucible disposed in the chamber and configured to receive dopant-added melt; a pulling-up portion that pulls up a seed crystal after the seed crystal is in contact with the dopant-added melt; a cooler disposed above the crucible to cool a monocrystal that is being grown; and a magnetic field applying unit disposed outside the chamber to apply a horizontal magnetic field to the dopant-added melt. The method includes: during a formation of a shoulder of the silicon monocrystal, starting the formation while moving the cooler downward; stopping the cooler from moving downward at a stop position before a top of the shoulder reaches a level of a lower end of the cooler; and continuing the formation of the shoulder while the cooler is kept at the stop position. ... Sumco Corporation

01/12/17 / #20170011918

Epitaxial-silicon-wafer manufacturing method and epitaxial silicon wafer

A manufacturing method of an epitaxial silicon wafer including a silicon wafer doped with boron and having a resistivity of 100 mΩ•cm or less and an epitaxial film formed on the silicon wafer includes: growing the epitaxial film on the silicon wafer; and applying a heat treatment on the epitaxial silicon wafer at a temperature of less than 900 degrees c.. . ... Sumco Corporation

01/12/17 / #20170011903

Method for manufacturing semiconductor wafer

A mirror-finishing chamfer polishing is applied using an abrasive-grain-free polishing solution to a chamfered portion of a semiconductor wafer having an oxide film on a top side or the top and bottom sides of the semiconductor wafer and having no oxide film on the chamfered portion. Further, prior to the mirror-finishing chamfer polishing, a pre-finish mirror chamfer polishing is applied using an abrasive-grain-containing polishing solution to the chamfered portion of the semiconductor wafer having the oxide film on the top side or the top and bottom sides and on the chamfered portion.. ... Sumco Corporation








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