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T3memory Inc patents

Recent patent applications related to T3memory Inc. T3memory Inc is listed as an Agent/Assignee. Note: T3memory Inc may have other listings under different names/spellings. We're not affiliated with T3memory Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | T3memory Inc-related inventors




Date T3memory Inc patents (updated weekly) - BOOKMARK this page
11/17/16Method of making a spin-transfer-torque magnetoresistive random access memory (stt-mram)
10/27/16Magnetoresistive element having a novel recording multilayer
10/06/16Method to make mram with small footprint
09/08/16Novel perpendicular magnetoresistive elements
08/04/16Mram having spin hall effect writing and making the same
07/21/16Method for making mram with small dimension and high qulity
06/16/16An improved method to make of fabricating ic/mram using oxygen ion implantation
06/09/16Electric field assisted perpendicular stt-mram
03/10/16Method to make mram with small cell size
03/03/16Method to make three-terminal mram
03/03/16Three-terminal stt-mram and method to make the same
12/17/15Three-terminal spin transistor magnetic random access memory and the method to make the same
11/26/15Method to form small mram cell by collimated oxygen ion implantation
05/21/15Method to form mram by dual ion implantation
11/20/14Method to make mram using oxygen ion implantation
11/06/14Perpendicular stt-mram having logical magnetic shielding
11/06/14Magnetic memory devices
10/30/14Perpendicular stt-mram having permeable dielectric layers
10/23/14Novel spin hall effect magnetic-ram
10/16/14Method to make integrated device using oxygen ion implantation
10/09/14Novel hybrid patterning mtj stack
10/09/14Mram having novelself-referenced read method
10/02/14Method of patterning mtj stack
09/11/14Mram having spin hall effect writing and making the same
09/11/14Magnetoresistive element
09/04/14Magnetoresistive memory cell and manufacturing the same
08/28/14Self-aligned process for fabricating voltage-gated mram
08/07/14Stt-mram and manufacturing the same
08/07/14Novel perpendicular magnetoresistive elements
08/07/14Method of manufacturing mram memory elements
07/31/14Spin transfer mram element having a voltage bias control
07/24/14Electric field assisted perpendicular stt-mram
07/24/14Perpendicular magnetoresistive memory element
07/17/14Magnetoresistive element and manufacturing the same
06/26/14Perpendicular magnetoresistive elements
06/26/14Magnetoresistive element having a novel cap multilayer







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