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T3memory Inc patents

Recent patent applications related to T3memory Inc. T3memory Inc is listed as an Agent/Assignee. Note: T3memory Inc may have other listings under different names/spellings. We're not affiliated with T3memory Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | T3memory Inc-related inventors

Date T3memory Inc patents (updated weekly) - BOOKMARK this page
11/17/16Method of making a spin-transfer-torque magnetoresistive random access memory (stt-mram)
10/27/16Magnetoresistive element having a novel recording multilayer
10/06/16Method to make mram with small footprint
09/08/16Novel perpendicular magnetoresistive elements
08/04/16Mram having spin hall effect writing and making the same
07/21/16Method for making mram with small dimension and high qulity
06/16/16An improved method to make of fabricating ic/mram using oxygen ion implantation
06/09/16Electric field assisted perpendicular stt-mram
03/10/16Method to make mram with small cell size
03/03/16Method to make three-terminal mram
03/03/16Three-terminal stt-mram and method to make the same
12/17/15Three-terminal spin transistor magnetic random access memory and the method to make the same
11/26/15Method to form small mram cell by collimated oxygen ion implantation
05/21/15Method to form mram by dual ion implantation
11/20/14Method to make mram using oxygen ion implantation
11/06/14Perpendicular stt-mram having logical magnetic shielding
11/06/14Magnetic memory devices
10/30/14Perpendicular stt-mram having permeable dielectric layers
10/23/14Novel spin hall effect magnetic-ram
10/16/14Method to make integrated device using oxygen ion implantation
10/09/14Novel hybrid patterning mtj stack
10/09/14Mram having novelself-referenced read method
10/02/14Method of patterning mtj stack
09/11/14Mram having spin hall effect writing and making the same
09/11/14Magnetoresistive element
09/04/14Magnetoresistive memory cell and manufacturing the same
08/28/14Self-aligned process for fabricating voltage-gated mram
08/07/14Stt-mram and manufacturing the same
08/07/14Novel perpendicular magnetoresistive elements
08/07/14Method of manufacturing mram memory elements
07/31/14Spin transfer mram element having a voltage bias control
07/24/14Electric field assisted perpendicular stt-mram
07/24/14Perpendicular magnetoresistive memory element
07/17/14Magnetoresistive element and manufacturing the same
06/26/14Perpendicular magnetoresistive elements
06/26/14Magnetoresistive element having a novel cap multilayer

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with T3memory Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for T3memory Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by