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Tamura Corporation patents


Recent patent applications related to Tamura Corporation. Tamura Corporation is listed as an Agent/Assignee. Note: Tamura Corporation may have other listings under different names/spellings. We're not affiliated with Tamura Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Tamura Corporation-related inventors


Transformer and switched-mode power supply apparatus

A transformer being capable of reducing cross regulation even in a case where the load is unbalanced and a switched-mode power supply apparatus using the transformer are provided. A transformer T has a core; a primary winding provided in the core; at least two secondary windings provided in the core... Tamura Corporation

Transformer and switched-mode power supply apparatus

A transformer is capable of suppressing the output voltage difference, and a switched-mode power supply apparatus uses the transformer. A transformer has a core; a primary winding provided in the core; a gap provided in the core at a location where the primary winding is provided; and at least two... Tamura Corporation

Coupled inductor

A coupled inductor comprises an annular core 1 and coils 2a, 2b wound around the core. The annular core 1 includes a sendust core having a maximum differential permeability that is equal to or greater than 30.... Tamura Corporation

Method of growing ga2o3-based crystal film, and crystal multilayer structure

A method of growing a conductive Ga2O3-based crystal film by MBE includes producing a Ga vapor and a Si-containing vapor and supplying the vapors as molecular beams onto a surface of a Ga2O3-based crystal substrate so as to grow the Ga2O3-based crystal film. The Ga2O3-based crystal film includes a Si-containing... Tamura Corporation

Water-based organic solderability preservative, and electronic board and surface treatment method using the same

A water-based organic solderability preservative includes (A) an imidazole compound, (B) an organic acid, (C) a complex coating formation aid, (D) an organic solvent and (E) water. The component (D) (organic solvent) has a solubility to water of 10 g/100 g or more at 20 degrees C. and a boiling... Tamura Corporation

Solder composition and electronic board

A solder composition of the invention includes: a flux composition containing a component (A) in a form of a rosin-based resin, a component (B) in a form of an activator, a component (C) in a form of a solvent and a component (D) in a form of a thixotropic agent;... Tamura Corporation

Semiconductor element and production same

A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-Ga2O3-based single crystal layer. The undoped β-Ga2O3-based single... Tamura Corporation

Semiconductor element and crystalline laminate structure

A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a β-Ga2O3-based single crystal including a... Tamura Corporation

Ga2o3-based single crystal substrate

Provided is a Ga2O3-based single crystal substrate capable of achieving a high processing yield. A Ga2O3-based single crystal substrate having a crack density of less than 0.05 cracks/cm can be obtained that has as a principal surface thereof a surface rotated 10-150° from the (100) plane, when a rotation direction... Tamura Corporation

Semiconductor element, manufacturing same, semiconductor substrate, and crystal laminate structure

A semiconductor element includes a base substrate that includes a Ga2O3-based crystal having a thickness of not less than 0.05 μm and not more than 50 μm, and an epitaxial layer that includes a Ga2O3-based crystal and is epitaxially grown on the base substrate. A semiconductor element includes an epitaxial... Tamura Corporation

Reactor

The reactor comprises: an annular core 10; a resin member 20 covering a periphery of the annual core 10; a coil 5 attached to an outer circumference of the resin member 20; and a temperature sensor 9 inserted into a gap between the resin member 20 and the coil 5.... Tamura Corporation

Light emitting device

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad... Tamura Corporation

Schottky barrier diode

A semiconductor device includes a semiconductor layer including a Ga2O3-based single crystal, and an electrode that is in contact with a surface of the semiconductor layer. The semiconductor layer is in Schottky-contact with the electrode and has an electron carrier concentration based on reverse withstand voltage and electric field-breakdown strength... Tamura Corporation

Beta-ga2o3 single-crystal substrate

A β-Ga2O3-based single-crystal substrate includes a β-Ga2O3-based single crystal, and a principal surface being a plane parallel to a b-axis of the β-Ga2O3-based single crystal. A maximum value of Δω on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not... Tamura Corporation

Semiconductor substrate, epitaxial wafer, and manufacturing epitaxial wafer

A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a β-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the β-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial... Tamura Corporation

Gallium oxide substrate

Provided is a gallium oxide substrate which has less linear pits. Obtained is a gallium oxide substrate wherein the average density of linear pits in a single crystal surface is 1,000 pits/cm2 or less.... Tamura Corporation








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