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Tel Epion Inc
Tel Epion Inc_20131212
  

Tel Epion Inc patents

Recent patent applications related to Tel Epion Inc. Tel Epion Inc is listed as an Agent/Assignee. Note: Tel Epion Inc may have other listings under different names/spellings. We're not affiliated with Tel Epion Inc, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Tel Epion Inc-related inventors




Date Tel Epion Inc patents (updated weekly) - BOOKMARK this page
03/16/17Method for high throughput using beam scan size and beam position in beam processing system
02/23/17Hybrid corrective processing system and method
11/03/16Method of surface profile correction using gas cluster ion beam
08/04/16Sidewall spacer patterning method using gas cluster ion beam
03/10/16Process gas enhancement for beam treatment of a substrate
02/11/16Gcib nozzle assembly
12/03/15Multi-step location specific process for substrate edge profile correction for gcib system
11/19/15Method and beam deflection in a gas cluster ion beam system
09/24/15Gas cluster ion beam etching process
08/27/15Apparatus and methods for implementing predicted systematic error correction in location specific processing
05/28/15Molecular beam enhanced gcib treatment
05/21/15Multi-step location specific process for substrate edge profile correction for gcib system
02/26/15Gcib etching adjusting fin height of finfet devices
02/12/15Method for increasing adhesion of copper to polymeric surfaces
05/08/14Pre-aligned nozzle/skimmer
12/12/13Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
12/12/13Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
11/21/13Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
09/05/13Method to alter silicide properties using gcib treatment
08/29/13Method to alter silicide properties using gcib treatment
08/01/13Gas cluster ion beam etching process for etching si-containing, ge-containing, and metal-containing materials
04/04/13Pre-aligned multi-beam nozzle/skimmer module
03/28/13Surface profile adjustment using gas cluster ion beam processing
03/07/13Gas cluster ion beam etch profile control using beam divergence
03/07/13Gas cluster ion beam etching process for metal-containing materials
03/07/13Gas cluster ion beam etching process for si-containing and ge-containing materials
03/07/13Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
10/04/12Gcib process for reducing interfacial roughness following pre-amorphization
09/20/12Method to alter silicide properties using gcib treatment
09/06/12Scanner for gcib system
09/06/12Method for controlling a resistive property in a resistive element using a gas cluster ion beam
12/22/11Method for preparing a light-emitting device using gas cluster ion beam processing
11/10/11Gas cluster ion beam system with cleaning apparatus
11/10/11Gas cluster ion beam system with rapid gas switching apparatus
11/03/11Method for modifying a material layer using gas cluster ion beam processing
10/06/11High-voltage gas cluster ion beam (gcib) processing system
07/21/11Method for modifying an etch rate of a material layer using energetic charged particles
05/19/11Method to alter silicide properties using gcib treatment
04/14/11Gas cluster ion beam processing preparing an isolation layer in non-planar gate structures
04/14/11Method and system for tilting a substrate during gas cluster ion beam processing
04/14/11Method for treating non-planar structures using gas cluster ion beam processing
09/30/10Pre-aligned nozzle/skimmer
09/30/10Method for modifying a material layer using gas cluster ion beam processing
09/30/10Method for enhancing a substrate using gas cluster ion beam processing
09/09/10Ultra-thin film formation using gas cluster ion beam processing
09/02/10Material infusion in a trap layer structure using gas cluster ion beam processing
08/19/10Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam
08/12/10Multi-sequence film deposition and growth using gas cluster ion beam processing
08/12/10Method for forming trench isolation using a gas cluster ion beam growth process
08/05/10Multiple nozzle gas cluster ion beam processing system and operating
08/05/10Multiple nozzle gas cluster ion beam system
08/05/10Method of forming trench isolation using a multiple nozzle gas cluster ion beam process
08/05/10Method for forming trench isolation using gas cluster ion beam processing
07/22/10Electrostatic chuck power supply
03/25/10Surface profile adjustment using gas cluster ion beam processing
03/25/10Self-biasing active load circuit and related power supply for use in a charged particle beam processing system
03/11/10Electrostatic chuck power supply
02/04/10Method for selectively etching areas of a substrate using a gas cluster ion beam
02/04/10Method of forming semiconductor devices containing metal cap layers
02/04/10Method of forming semiconductor devices containing metal cap layers
12/24/09Method and system for directional growth using a gas cluster ion beam
12/24/09Method for forming trench isolation
12/24/09Method and system for growing a thin film using a gas cluster ion beam
09/17/09Method and system for depositing silicon carbide film using a gas cluster ion beam
07/30/09Method for increasing the penetration depth of material infusion in a substrate using a gas cluster ion beam
Patent Packs
07/23/09Method of forming capping structures on one or more material layer surfaces
06/04/09Method and controlling a gas cluster ion beam formed from a gas mixture
05/21/09Dual damascene integration structures and forming improved dual damascene integration structures
04/23/09Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
04/02/09Method and system for adjusting beam dimension for high-gradient location specific processing
04/02/09Method and system for multi-pass correction of substrate defects
04/02/09Method and device for adjusting a beam property in a gas cluster ion beam system
04/02/09Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
04/02/09Method for depositing films using gas cluster ion beam processing
04/02/09Method for directional deposition using a gas cluster ion beam
04/02/09Method to improve a copper/dielectric interface in semiconductor devices
12/12/13Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via







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