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Tokyo Electron Limited patents


Recent patent applications related to Tokyo Electron Limited. Tokyo Electron Limited is listed as an Agent/Assignee. Note: Tokyo Electron Limited may have other listings under different names/spellings. We're not affiliated with Tokyo Electron Limited, we're just tracking patents.

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 new patent  Processing apparatus and processing method, and gas cluster generating apparatus and gas cluster generating method

Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container;... Tokyo Electron Limited

 new patent  Method for rf power distribution in a multi-zone electrode array

Embodiments of systems and methods for RF power distribution in a multi-zone electrode array are described. A system may include a plasma source configured to generate a plasma field. Also, the system may include an RF power source coupled to the plasma source and configured to supply RF power to... Tokyo Electron Limited

 new patent  Microwave control method

A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna... Tokyo Electron Limited

 new patent  Focus ring replacement method and plasma processing system

A method performed by a processor of a plasma processing system including a transfer device and a plasma processing apparatus that includes a process chamber. The process chamber includes a mount table on a surface of which a first focus ring is placed. The method includes controlling the transfer device... Tokyo Electron Limited

 new patent  Liquid processing method, memory medium and liquid processing apparatus

A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of... Tokyo Electron Limited

 new patent  Mask pattern forming method, fine pattern forming method, and film deposition apparatus

In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns... Tokyo Electron Limited

 new patent  Method for depositing a silicon nitride film

A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in... Tokyo Electron Limited

 new patent  Pattern forming method and heating apparatus

The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the film of the block copolymer under a solvent vapor atmosphere to subject the block copolymer to phase separation, and removes one of the... Tokyo Electron Limited

 new patent  Bonding apparatus

A bonding apparatus includes an upper holding unit, a lower holding unit, a pushing unit and an attracting/holding unit. The upper holding unit is configured to hold a first substrate from a top surface thereof which is a non-bonding surface. The lower holding unit is provided under the upper holding... Tokyo Electron Limited

 new patent  Substrate processing apparatus

Provided is a substrate processing apparatus, including: transportation chamber maintained in an atmospheric environment where a substrate is transported; a vacuum processing chamber connected with the transportation chamber through a load lock chamber; a substrate placing table installed in the vacuum processing chamber and having a body part and a... Tokyo Electron Limited

 new patent  Substrate transfer device and bonding system

A substrate transfer device for transferring a first substrate and a second substrate to a bonding apparatus configured to bond the first substrate and the second substrate, includes a first holding part configured to hold the first substrate from an upper surface side, a lower surface of the first substrate... Tokyo Electron Limited

 new patent  Bonding system

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate in a normal pressure atmosphere, a surface modifying apparatus configured to modify surfaces of the first substrate and the second substrate to be bonded with each other in a depressurized atmosphere, a... Tokyo Electron Limited

 new patent  Bonding system

A bonding system includes a substrate transfer device configured to transfer a first substrate and a second substrate to a bonding apparatus, a first holding plate configured to hold the first substrate from an upper surface side, and a second holding plate disposed below the first holding plate and configured... Tokyo Electron Limited

Substrate processing apparatus, substrate processing method and recording medium

A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store... Tokyo Electron Limited

Gas supply system, substrate processing system and gas supply method

A gas supply system includes: a first flow channel connecting a first gas source and a chamber; a second flow channel connecting a second gas source and the first flow channel; a control valve, provided in the second flow channel, configured to control a flow rate of the second gas;... Tokyo Electron Limited

Plasma processing apparatus

At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time... Tokyo Electron Limited

Method and selective film deposition using a cyclic treatment

A method is provided for selective film deposition on a substrate. According to one embodiment, the method includes providing a substrate containing a first material having a first surface and second material having a second surface, where the first material includes a dielectric material and the second material contains a... Tokyo Electron Limited

Wet etching method, substrate liquid processing apparatus, and storage medium

This wet etching method comprises rotating a substrate (W), supplying an etching chemical to a first surface (a surface for forming a device) of the rotating substrate, and supplying an etching inhibitor (DIW) to a second surface (a surface which is not used for forming a device) during the supplying... Tokyo Electron Limited

Method of forming insulating film

There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film... Tokyo Electron Limited

Doping method, doping apparatus, and semiconductor element manufacturing method

Provided is a doping method for doping by injecting a dopant into a processing target substrate. According to this doping method, a value of bias electric power supplied during a plasma doping processing is set to a predetermined value on premise of a washing processing to be performed after a... Tokyo Electron Limited

Substrate liquid processing apparatus, substrate liquid processing method and storage medium

A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The controller processes the substrate in the liquid processing unit, and switches the processing liquid discharged from a discharge line, from a recycling line, to a waste line... Tokyo Electron Limited

Substrate processing apparatus

A throughput in processing a substrate can be improved and a running cost thereof can be reduced. A substrate processing apparatus 1 that processes a substrate 3 with a processing liquid and dries the substrate 3 includes a substrate rotating device 22 configured to rotate the substrate 3; a processing... Tokyo Electron Limited

Ruthenium wiring and manufacturing method thereof

There is provided a ruthenium wiring, including: a TiON film formed as a base film in a recess formed in a predetermined film on a surface of a substrate; and a ruthenium film formed on the TiON film so as to fill the recess.... Tokyo Electron Limited

Method for forming copper film

A method for forming a copper film is provided. In the method, a base film that is a titanium nitride film, a tungsten film or a tungsten nitride film is formed along a surface of an insulating film of an object. A copper film is formed on the base film... Tokyo Electron Limited

Substrate liquid processing apparatus, substrate liquid processing method and recording medium

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body... Tokyo Electron Limited

Substrate defect inspection apparatus, adjusting sensitivity parameter value for substrate defect inspection, and non-transitory storage medium

A method of adjusting a sensitivity parameter value for substrate defect inspection used in a substrate defect inspection apparatus compares, for each pixel value of a selected virtual inspection substrate, using reference pixel data to be used after adjustment, the deviation amount from an allowable range corresponding to the position... Tokyo Electron Limited

Method for operation instability detection in a surface wave plasma source

Provided are methods and systems for operation instability detection in a surface wave plasma source. In an embodiment a system for plasma processing may include a surface wave plasma source configured to generate a plasma field. The system may also include an optical sensor configured to generate information characteristic of... Tokyo Electron Limited

Plasma film-forming apparatus and substrate pedestal

Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an... Tokyo Electron Limited

Plasma film-forming method and plasma film-forming apparatus

Disclosed is a plasma film-forming method including: accommodating a workpiece in a chamber; supplying a film-forming gas into the chamber; generating plasma within the chamber; and exciting the film-forming gas by the plasma to form a predetermined film on the workpiece. Helium gas is supplied as a plasma generating gas... Tokyo Electron Limited

Plasma processing method

A plasma processing method for performing a plasma process on a substrate in a plasma processing apparatus is provided. The plasma processing method comprises: a sampling-average-value calculating process of sampling voltage detection signals and electric current detection signals and calculating an average value of these signals during a first monitoring... Tokyo Electron Limited

Support plasma adjustment, adjusting plasma, and storage medium

A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index value between adjustment positions for each of the adjustment parts, the index value corresponding to electron density of plasma, an input part for inputting a... Tokyo Electron Limited

Reinforcing structure, vacuum chamber and plasma processing apparatus

There is provided a reinforcing structure in which a plurality of beam members provided on a top surface of a cover of a vacuum chamber for performing predetermined processing on a substrate is combined to reinforce the cover. The reinforcing structure includes a ring-shaped portion formed by arranging beam members... Tokyo Electron Limited

Apparatus and processing gas, and storage medium

An apparatus for processing a gas includes: a mounting part installed in a processing container and on which a substrate is mounted; a first gas flow path where a first gas is supplied from a first gas supply mechanism to an upstream portion of the first gas flow path, and... Tokyo Electron Limited

Etching process method

An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a... Tokyo Electron Limited

Substrate processing system and temperature control method

Disclosed is a substrate processing system including a substrate processing apparatus; and a control device that controls the substrate processing apparatus. The substrate processing apparatus includes: a chamber; a placing table provided within the chamber; and heaters embedded in the placing table corresponding to division regions, respectively. The control device... Tokyo Electron Limited

12/28/17 / #20170372951

Method and processing performing pre-treatment to form copper wiring in recess formed in substrate

There is provided a method for performing a pre-treatment to form a copper wiring in a recess formed in a substrate, which includes forming a barrier layer on a surface of the substrate that defines the recess, and forming a seed layer on the barrier layer. The method further includes... Tokyo Electron Limited

12/28/17 / #20170373659

Method for designing filter

A method is provided to design a filter. In the method, a difference between a high frequency to be blocked and a resonance frequency of a distributed constant type reference filter is obtained, the reference filter including a reference coil having windings wound at a plurality of pitches having the... Tokyo Electron Limited

12/21/17 / #20170361364

Substrate processing apparatus, cleaning substrate processing apparatus, and storage medium

According to the present disclosure, both first and second cup bodies are brought into a state of being close to each other by lifting one of the first and second cup bodies. A first gap between a gap forming portion formed on the lower surface of a first protruding portion... Tokyo Electron Limited

12/21/17 / #20170362704

Gas mixing device and substrate processing apparatus

A gas mixing device includes: a cylindrical portion including an upper surface which is closed; a gas outflow passage formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls disposed to be spaced apart from each other... Tokyo Electron Limited

12/21/17 / #20170363407

Measuring instrument for measuring electrostatic capacity and calibrating transfer position data in processing system by using measuring instrument

Provided is a measuring instrument for measuring an electrostatic capacity. The measuring instrument includes a base substrate having a disk shape, a plurality of first sensors arranged along an edge of the base substrate and respectively provide a plurality of side electrodes, one or more second sensors each of which... Tokyo Electron Limited

12/21/17 / #20170364061

Method for setting mounting position of target substrate and film forming system

In a method for setting a mounting position of a target substrate, the test substrate is transferred to a second position deviated from a first position. A mask has expected arrangement position where a non-film formation region has a preset width when the target substrate is mounted at the first... Tokyo Electron Limited

12/21/17 / #20170365445

Plasma processing apparatus and waveform correction method

A plasma processing apparatus includes an electrode to which a high frequency for plasma generation is applied and which serves as a mounting table for a target object. The plasma processing apparatus further includes a high frequency generation unit, a distortion component extraction unit and a waveform correction unit. The... Tokyo Electron Limited

12/21/17 / #20170365446

Microwave supply apparatus, plasma processing apparatus, and plasma processing method

A microwave supply apparatus includes a waveguide, a circulator, and a matcher, a first port of the circulator receives a microwave from an input end. First and second ends of the waveguide are coupled to second and third ports of the circulator, respectively. The matcher is provided between the input... Tokyo Electron Limited

12/21/17 / #20170365465

Method of manufacturing semiconductor device, and semiconductor manufacturing apparatus

There is provided a method of manufacturing a semiconductor device, which includes: forming a silicon film inside a recess formed in a surface of a workpiece by supplying a film forming gas containing silicon to the workpiece; subsequently, supplying a process gas, which includes a halogen gas for etching the... Tokyo Electron Limited

12/14/17 / #20170356084

Processing silicon nitride film and forming silicon nitride film

A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD... Tokyo Electron Limited

12/14/17 / #20170358450

Organic mandrel protection process

Provide is a method of patterning spacers, the method comprising: providing an initial patterned structure in a substrate in a processing chamber, the initial patterned structure comprising an organic mandrel and an underlying layer; exposing the patterned structure in a direct current superposition (DCS) plasma treatment process, the process depositing... Tokyo Electron Limited

12/14/17 / #20170358458

Method of manufacturing semiconductor device, heat treatment apparatus, and storage medium

A method of manufacturing a semiconductor device includes: loading a substrate into a process container after dry-etching a portion of a silicon film formed in a recess on the substrate; performing etching to partially or entirely remove the silicon film remaining on a side wall inside the recess by supplying... Tokyo Electron Limited

12/14/17 / #20170358460

Etching process method

An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power... Tokyo Electron Limited

12/14/17 / #20170358464

Liquid processing apparatus, liquid processing method, and storage medium

Disclosed is a liquid processing apparatus including: a plurality of substrate placement regions; a nozzle that supplies a processing liquid to a substrate from each processing position; a nozzle placement region provided behind a row of the substrate placement regions; an arm that detachably holds the nozzle at one end... Tokyo Electron Limited

12/14/17 / #20170358470

Substrate liquid processing apparatus, substrate liquid processing method, and storage medium

A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling... Tokyo Electron Limited

12/14/17 / #20170358479

Substrate transfer device and substrate transfer method

Generation of dust from a peripheral portion of a substrate can be suppressed, and a processed substrate can be suppressed from being adversely affected by a pre-processed substrate. Further, an actual elevation state of the member configured to be moved up and down to support the substrate can be investigated.... Tokyo Electron Limited

12/14/17 / #20170358835

Microwave plasma processing apparatus and microwave plasma processing method

Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber;... Tokyo Electron Limited

12/07/17 / #20170350014

Plasma processing apparatus and plasma processing method

This plasma processing apparatus includes a processing container that defines a plasma processing space, a holder that holds a substrate to be processed, a gas supply unit that supplies gas into the plasma processing space, an antenna that radiates microwaves to the plasma processing space, a coaxial waveguide that supplies... Tokyo Electron Limited

12/07/17 / #20170350826

Dark field wafer nano-defect inspection system with a singular beam

Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least... Tokyo Electron Limited

12/07/17 / #20170352560

Substrate processing method

)... Tokyo Electron Limited

12/07/17 / #20170352576

Substrate placing table

A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a water on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a... Tokyo Electron Limited

12/07/17 / #20170352584

Pattern forming method

A first film having a repetitive line pattern is formed on an under film. A second film is formed on a side surface of the first film. The second film has an etching selectivity different from that of the first film. A third film is formed on an upper surface... Tokyo Electron Limited

11/30/17 / #20170342548

Method of forming carbon film, apparatus of forming carbon film and storage medium

There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber, and supplying a hydrocarbon-based carbon source gas and a pyrolysis temperature drop gas for dropping a pyrolysis temperature of the hydrocarbon-based carbon source gas into the process chamber,... Tokyo Electron Limited

11/30/17 / #20170342553

Selective deposition with surface treatment

Embodiments of the invention provide methods for selective deposition on different materials using a surface treatment. According to one embodiment, the method includes providing a substrate containing a first material layer having a first surface and a second material layer having a second surface, and performing a chemical oxide removal... Tokyo Electron Limited

11/30/17 / #20170342564

Plasma processing apparatus

Disclosed is a plasma processing apparatus for performing a plasma processing on a workpiece. The apparatus includes: a processing container that accommodates the workpiece; a dielectric window that is provided to seal an opening in an upper portion of the processing container and transmits microwaves into the processing container; and... Tokyo Electron Limited

11/30/17 / #20170345609

Vacuum exhaust method

A vacuum exhaust method is for decreasing a pressure in a processing chamber in which a mounting table configured to mount thereon a substrate is provided by using a gas exhaust unit. The vacuum exhaust method includes mounting a non-evaporated getter (NEG) on the mounting table, and adsorbing an active... Tokyo Electron Limited

11/30/17 / #20170345619

Multi-frequency power modulation for etching high aspect ratio features

A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate... Tokyo Electron Limited

11/30/17 / #20170345626

Localized process control using a plasma system

Plasma processing conditions may be changed for localized regions of a substrate. A reactive gas may be maintained in a localized region of a substrate while other regions of the substrate are not exposed to the reactive gas. Thus, plasma conditions may be generated at specific regions of the substrate.... Tokyo Electron Limited

11/30/17 / #20170345644

Carbon film forming method, carbon film forming apparatus, and storage medium

There is provided a method of forming a carbon film on a workpiece, which includes: loading the workpiece into a process chamber; supplying a gas containing a boron-containing gas into the process chamber to form a seed layer composed of a boron-based thin film on a surface of the workpiece;... Tokyo Electron Limited

11/30/17 / #20170345664

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is... Tokyo Electron Limited

Patent Packs
11/30/17 / #20170345665

Atomic layer etching systems and methods

A processing apparatus includes a processing chamber having a substrate holder; a first gas delivery system configured to deliver a first source gas within the processing chamber; a second gas delivery system configured to deliver a second source gas within the processing chamber; an energy activation system; and processing circuitry.... Tokyo Electron Limited

11/30/17 / #20170345666

Plasma processing method

Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a... Tokyo Electron Limited

11/30/17 / #20170345667

Method of silicon extraction using a hydrogen plasma

A method of silicon extraction using a hydrogen plasma has been disclosed in various embodiments. The substrate processing method includes providing a substrate containing a first material consisting of silicon and a second material that is different from the first material, forming a plasma-excited process gas containing H2 and optionally... Tokyo Electron Limited

11/30/17 / #20170345671

Method of sidewall image transfer

According to one embodiment, a substrate processing method includes providing a substrate containing Si raised features, depositing a conformal film on the Si raised features, and performing a spacer etch process that removes horizontal portions of the conformal film while substantially leaving vertical portions of the conformal film to form... Tokyo Electron Limited

11/30/17 / #20170345673

Method of selective silicon oxide etching

Embodiments of the invention provide a substrate processing method for selective SiO2 etching relative to other layers used in semiconductor manufacturing. The method includes providing a substrate containing a first layer containing SiO2 and a second layer that is different from the first layer, forming a plasma-excited process gas containing... Tokyo Electron Limited

11/30/17 / #20170345674

Method of selective silicon nitride etching

Embodiments of the invention provide a substrate processing method for selective SiN etching relative to other layers used in semiconductor manufacturing. According to one embodiment, the substrate processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that... Tokyo Electron Limited

11/30/17 / #20170345685

Substrate cleaning method, substrate cleaning system and memory medium

A substrate cleaning method includes supplying, onto a substrate, a film-forming processing liquid including a volatile component and a polar organic material that forms a processing film on the substrate, volatilizing the volatile component such that the film-forming processing liquid solidifies or cures and forms the processing film on the... Tokyo Electron Limited

11/30/17 / #20170345689

Liquid processing apparatus

A liquid processing apparatus performs a liquid processing on a rotating substrate by supplying a processing liquid. Surrounding members surround a region including an upper space of a cup body surrounding the rotating substrate and provided with an opening above the substrate. An air flow forming portion forms a descending... Tokyo Electron Limited

11/30/17 / #20170345904

Wrap-around contact integration scheme

Embodiments of the invention provide a wrap-around contact integration scheme that includes sidewall protection during contact formation. A substrate processing method includes providing a substrate containing a raised contact in a first dielectric film, and a second dielectric film on the first dielectric film, where the second dielectric film has... Tokyo Electron Limited

11/30/17 / #20170346001

Method of manufacturing magnetoresistive device and magnetoresistive device manufacturing system

A method of manufacturing a magnetoresistive device according to an embodiment includes: forming an underlying film including silicon, oxygen, and carbon, on a substrate; performing plasma ashing on the underlying film by using plasma of an oxygen-containing gas; forming a multilayer film including a metal layer and a magnetic layer,... Tokyo Electron Limited

11/30/17 / #20170347442

Plasma processing apparatus and particle adhesion preventing method

A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency... Tokyo Electron Limited

11/23/17 / #20170333958

Substrate liquid treatment apparatus, tank cleaning method and non-transitory storage medium

In one embodiment, a substrate liquid treatment apparatus includes: a tank that stores a processing liquid; a circulation line connected to the tank, through which circulation line a circulation flow of the processing liquid that leaves the tank and then returns back to the tank; a processing unit that processes... Tokyo Electron Limited

11/23/17 / #20170335453

Film deposition apparatus

A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply... Tokyo Electron Limited

11/23/17 / #20170336143

Heat treatment apparatus

A heat treatment apparatus includes: a reaction tube processing a plurality of substrates; a support member supporting the reaction tube; a flange protruding outwardly from a lower end of the reaction tube: a concave portion formed in an outer periphery of the flange; and a rotatable roller installed in a... Tokyo Electron Limited

11/23/17 / #20170338081

Plasma processing apparatus

A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high... Tokyo Electron Limited

Patent Packs
11/23/17 / #20170338084

Plasma processing method

A plasma processing method is implemented by a plasma processing apparatus including a processing chamber, a lower electrode, a focus ring arranged around the lower electrode, an inner upper electrode arranged to face the lower electrode, an outer upper electrode electrically insulated from the inner upper electrode, a quartz member... Tokyo Electron Limited

11/23/17 / #20170338099

Film deposition method

A method performed by a film deposition apparatus includes supplying a first reaction gas, which is adsorbable to hydroxyl groups, to a surface of a substrate and causing the first reaction gas to be adsorbed onto the surface of the substrate; supplying a second reaction gas to the substrate and... Tokyo Electron Limited

11/23/17 / #20170338114

Pattern forming method, gas cluster ion beam irradiating device and pattern forming apparatus

A mask pattern is formed on a substrate. A first spacer film is formed on the mask pattern. The first spacer film is etched by irradiating the substrate with a gas cluster ion beam (GCIB). A first spacer pattern is formed on the substrate by removing the mask pattern. A... Tokyo Electron Limited

11/23/17 / #20170338116

Method for patterning a substrate using a layer with multiple materials

Techniques herein enable integrating stack materials and multiple color materials that require no corrosive gases for etching. Techniques enable a multi-line layer for self-aligned pattern shrinking in which all layers or colors or materials can be limited to silicon-containing materials and organic materials. Such techniques enable self-aligned block integration for... Tokyo Electron Limited

11/23/17 / #20170338120

Oxide film removing method, oxide film removing apparatus, contact forming method, and contact forming system

Disclosed is a method for removing, from a target substrate having an insulating film with a predetermined pattern formed thereon, a silicon-containing oxide film formed in a silicon portion at a bottom of the pattern. The method includes: forming a carbon-based protective film on the entire surface of the insulating... Tokyo Electron Limited

11/23/17 / #20170338405

Methods for additive formation of a stt mram stack

Disclosed herein are methods for additive formation of a STT-MRAM metal stack using a deposition process through a pre-patterned template that skims away metal ions that are less likely to enable anisotropic deposition on a substrate. The pre-patterned template is formed from a film stack using patterning techniques to form... Tokyo Electron Limited

11/16/17 / #20170329229

Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist

A method for critical dimension control in which a substrate is received having an underlying layer and a radiation-sensitive material layer thereon. The radiation-sensitive material is exposed through a patterned mask to a first wavelength of light in the UV spectrum, and developed a first time. The radiation-sensitive material is... Tokyo Electron Limited

11/16/17 / #20170329318

Method and autonomous tool parameter impact identification system for semiconductor manufacturing

A system and method autonomously determines the impact of respective tool parameters on tool performance in a semiconductor manufacturing system. A parameter impact identification system receives tool parameter and tool performance data for one or more process runs of the semiconductor fabrication system and generates a separate function for each... Tokyo Electron Limited

11/16/17 / #20170330730

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing chamber, a carrier wave group generation unit and a plasma generation unit. The carrier wave group generation unit is configured to generate a carrier wave group including a plurality of carrier waves having different frequencies in a frequency domain. The carrier wave group... Tokyo Electron Limited

11/16/17 / #20170330759

Etching method

An etching method includes a cooling process of controlling a temperature of a processing target object provided within a processing vessel to −20° C. or less; a generating process of generating plasma of a processing gas containing hydrogen atoms, fluorine atoms, carbon atoms and oxygen atoms within the processing vessel;... Tokyo Electron Limited

11/16/17 / #20170330772

Plasma processing apparatus

A capacitively-coupled plasma processing apparatus includes: at least one chamber body providing chambers separated from each other; upper electrodes respectively installed in upper spaces within the chambers; lower electrodes respectively installed in lower spaces within the chambers; a high frequency power supply; a transformer including a primary coil electrically connected... Tokyo Electron Limited

11/16/17 / #20170330787

Mounting table system, substrate processing apparatus, and temperature control method

There is provided a mounting table system which includes: a mounting table rotatably installed so as to mount a substrate thereon; a plurality of heating parts installed in the mounting table, and configured to heat the mounting table; a single power source configured to supply an electric power to the... Tokyo Electron Limited

11/16/17 / #20170330806

Critical dimension control by use of a photo agent

A method for critical dimension control in which a substrate is received having an underlying layer and a patterned layer formed on the underlying layer, the patterned layer including radiation-sensitive material and a pattern of varying elevation with a first critical dimension. The method further includes applying an overcoat layer... Tokyo Electron Limited

11/09/17 / #20170320107

Substrate processing apparatus, substrate processing method, fluid supplying method and storage medium

The present disclosure provides a substrate processing apparatus including: a processing chamber configured to process a substrate; a fluid supply source configured to supply a substrate processing fluid used in processing for the substrate in a predetermined pressure; a constant pressure supplying path configured to supply the substrate processing fluid... Tokyo Electron Limited

11/09/17 / #20170321346

Film-forming apparatus

In a film-forming apparatus, a rotary shaft is connected to a rotary stage. A plurality of wafers are placed in a plurality of placement regions arranged in a circumferential direction with respect to a central axis line of the rotary shaft and is held by the rotary stage. The rotary... Tokyo Electron Limited

11/09/17 / #20170323784

Method for depositing a planarization layer using polymerization chemical vapor deposition

A method is provided for depositing a planarization layer over features on a substrate using sequential polymerization chemical vapor deposition. According to one embodiment, the method includes providing a substrate containing a plurality of features with gaps between the plurality of features, delivering precursor molecules by gas phase exposure to... Tokyo Electron Limited

11/09/17 / #20170323796

Method for etching silicon layer and plasma processing apparatus

Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen,... Tokyo Electron Limited

11/09/17 / #20170323811

Substrate processing apparatus and temperature adjustment method

Provided is a substrate processing apparatus including: a chamber in which plasma processing is performed on a substrate; a susceptor disposed in the chamber and on which the substrate is held; a shower head provided to face the susceptor with a processing space therebetween; a high frequency power source which... Tokyo Electron Limited

11/09/17 / #20170323825

Etching method

A method includes performing one or more times of a sequence and reducing a film thickness of a fluorocarbon-containing film formed by performing one or more times of the sequence. Each of the one or more times of the sequence includes forming the fluorocarbon-containing film on a processing target object... Tokyo Electron Limited

11/02/17 / #20170314123

Method of filling recess

A method of filling a recess with a nitride film is performed by repeating a cycle. The cycle includes a film-forming raw material gas adsorption process of adsorbing a raw material gas containing an element forming the nitride film to be formed on a target substrate on which the recess... Tokyo Electron Limited

11/02/17 / #20170314130

Deposition device and deposition method

A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of... Tokyo Electron Limited

11/02/17 / #20170314991

Spatially resolved optical emission spectroscopy (oes) in plasma processing

Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident... Tokyo Electron Limited

11/02/17 / #20170316919

Plasma processing method and plasma processing apparatus

A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing... Tokyo Electron Limited

11/02/17 / #20170316923

Stage and substrate processing apparatus

A stage includes a plate having a top surface on which a substrate is to be placed and a bottom surface; a plurality of first tubes each extending toward different regions of the bottom surface and providing opening ends facing the bottom surface; a partition wall defining a plurality of... Tokyo Electron Limited

11/02/17 / #20170316939

Method for patterning a substrate using a layer with multiple materials

Techniques herein include forming single or multi-layer mandrels and then forming one or more lines of material running along sidewalls of the mandrels. A relatively thin portion of mandrel material stretches from a base of mandrels to each other and underneath sidewall spacers and other fill materials, thereby forming a... Tokyo Electron Limited

11/02/17 / #20170316947

Substrate processing method and substrate processing apparatus

A substrate processing method includes a fluorine-based gas supply step of supplying a fluorine-based gas into a processing chamber where a substrate having a silicon-based film is accommodated, a purge gas supply step of supplying a purge gas for discharging the supplied fluorine-based gas into the processing chamber. The substrate... Tokyo Electron Limited

11/02/17 / #20170316948

Transformer, plasma processing apparatus, and plasma processing method

A transformer includes: a rotary shaft configured to rotate about a central axis of the rotary shaft as a rotational axis; a primary-side first coil configured to extend around a first axis perpendicular to the central axis; a secondary-side second coil configured to extend around a second axis and supported... Tokyo Electron Limited

11/02/17 / #20170316961

Substrate liquid processing method, substrate liquid processing apparatus, and computer-readable storage medium that stores substrate liquid processing program

Disclosed is a substrate liquid processing method including: performing a liquid processing step of liquid-processing a substrate with a processing liquid, a rinse processing step of rinsing the liquid-processed substrate with a rinse liquid, and a water-repellency processing step of imparting water-repellency to the rinsed substrate with a water-repellent liquid;... Tokyo Electron Limited

11/02/17 / #20170317022

Ruthenium metal feature fill for interconnects

A method is provided for at least partially filling a feature in a substrate. The method includes providing a substrate containing a feature, depositing a ruthenium (Ru) metal layer to at least partially fill the feature, and heat-treating the substrate to reflow the Ru metal layer in the feature.... Tokyo Electron Limited

11/02/17 / #20170317273

Method for forming perpendicular magnetization type magnetic tunnel junction element and producing perpendicular magnetization type magnetic tunnel junction element

A method for forming a perpendicular magnetization type magnetic tunnel junction element includes forming a tunnel barrier layer on a first magnetic layer of a workpiece, cooling the workpiece on which the tunnel barrier layer is formed, and forming a second magnetic layer on the tunnel barrier layer after the... Tokyo Electron Limited

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