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Tokyo Electron Limited patents


Recent patent applications related to Tokyo Electron Limited. Tokyo Electron Limited is listed as an Agent/Assignee. Note: Tokyo Electron Limited may have other listings under different names/spellings. We're not affiliated with Tokyo Electron Limited, we're just tracking patents.

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Film forming method

A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate... Tokyo Electron Limited

Hot plate with programmable array of lift devices for multi-bake process optimization

Embodiments of systems and methods for substrate thermal processing using a hot plate with a programmable array of lift devices for multi-bake process optimization are presented. In an embodiment, an apparatus includes a base with an upper surface configured to receive the substrate. The base may include at least one... Tokyo Electron Limited

Temperature controlling apparatus, temperature controlling method, and placing table

Provided is a temperature controlling apparatus in which the accuracy of the temperature control of a processing target substrate is maintained high even when heaters are disconnected. The temperature controlling apparatus includes an electronic chuck, a plurality of heaters, and a controller. The heaters are embedded inside the electrostatic chuck... Tokyo Electron Limited

Solution treatment apparatus and solution treatment method

A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a... Tokyo Electron Limited

Particle collecting apparatus, particle collecting method, and particle collecting system

A particle collecting apparatus includes a cylindrical housing, a gap forming unit, a supply port and an intake port. The cylindrical housing has a closed top and an open bottom facing a target object. The gap forming unit is configured to form a gap having a predetermined distance between the... Tokyo Electron Limited

Auxiliary exposure apparatus and exposure amount distribution acquisition method

An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a... Tokyo Electron Limited

Plasma processing method and plasma processing apparatus

A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the... Tokyo Electron Limited

Plasma generating apparatus, plasma processing apparatus, and controlling plasma generating apparatus

A plasma generating apparatus according to the present disclosure includes: a high frequency power supply that generates a high frequency power; a plasma generation electrode connected to the high frequency power supply and formed by a hollow tube in which cooling water is distributed; a conductivity meter that measures conductivity... Tokyo Electron Limited

Atmospheric plasma processing manufacture of microelectronic workpieces

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between... Tokyo Electron Limited

Substrate liquid treatment apparatus, substrate liquid treatment method and storage medium

A substrate liquid treatment method in one embodiment includes, storing a phosphoric acid solution in a processing bath provided in a liquid treatment unit, and immersing a substrate into the stored phosphoric acid solution to process the substrate, draining a phosphoric acid solution at a first drainage flow rate from... Tokyo Electron Limited

Substrate processing method, substrate processing apparatus, and storage medium

Disclosed is a substrate liquid processing method including: a first processing step of discharging a fluid in the processing container until an inside of the processing container reaches a first discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing... Tokyo Electron Limited

Substrate processing apparatus

A substrate processing apparatus includes processing parts performing substrate processing on target substrates, respectively, substrate mounting tables mounting the target substrates thereon in the respective processing parts, gas introducing members introducing processing gases into processing spaces, a common exhaust mechanism evacuating the processing spaces at once and further performing pressure... Tokyo Electron Limited

Facilitation of spin-coat planarization over feature topography during substrate fabrication

Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. This abstract itself... Tokyo Electron Limited

Reduced-pressure drying apparatus

A reduced-pressure drying apparatus, for drying solution on a substrate in a chamber in a depressurized state, includes a solvent collecting unit that is a net-shaped plate configured to temporarily collect a solvent in the solution vaporized from the substrate. The solvent collecting unit is provided to face the substrate... Tokyo Electron Limited

Substrate processing apparatus and substrate processing method

A substrate processing apparatus according to the present disclosure includes a holding unit, a nozzle, a driving unit, and a controller. The holding unit holds a substrate. The nozzle supplies a processing liquid to the substrate held on the holding unit. The driving unit moves the nozzle. The controller controls... Tokyo Electron Limited

Gas introduction mechanism and processing apparatus

A gas introduction mechanism includes a manifold disposed in a process vessel and having an injector support part extending vertically along an inner wall surface of the process vessel and having an insertion hole, and a gas introduction part having a gas flow passage which protrudes outward from the injector... Tokyo Electron Limited

Coating and developing method and coating and developing apparatus

A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist... Tokyo Electron Limited

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within... Tokyo Electron Limited

Substrate processing apparatus and processing liquid supply method

A substrate processing apparatus includes a processing liquid supply mechanism 70 configured to supply a SPM liquid to a substrate; a temperature adjusting unit (heater) 303 configured to adjust a temperature of the SPM liquid at a time when the SPM liquid is supplied to the substrate from the processing... Tokyo Electron Limited

Boron film, boron film forming method, hard mask, and hard mask manufacturing method

There is provided a boron film forming method which includes forming a boron film on a target substrate by CVD by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron... Tokyo Electron Limited

Hard mask and manufacturing method thereof

There is provided a hard mask used in forming a recess having a depth of 500 nm or more by dry etching. The hard mask includes a boron-based film formed as an etching mask on a film including a SiO2 film. Further, there is provided a method of forming the... Tokyo Electron Limited

Position detection system and processing apparatus

There is provided a position detection system for use in a processing apparatus including a mounting table configured to mount thereon a disc-shaped target object and a focus ring surrounding a periphery of the mounting table. The system includes a light source configured to generate measurement light, three or more... Tokyo Electron Limited

Mounting table and plasma processing apparatus

A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with... Tokyo Electron Limited

Manufacturing nickel wiring

There is provided a method for manufacturing Ni wiring. The method includes forming an Ni film on a surface of a substrate having a recess formed thereon by CVD or ALD by using an Ni compound as a film forming material and NH3gas and H2 gas as reduction gases to... Tokyo Electron Limited

Film deposition method and computer program storage medium

A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to... Tokyo Electron Limited

Method of etching porous film

A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous... Tokyo Electron Limited

Substrate processing apparatus and substrate processing method

In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that... Tokyo Electron Limited

Back-side friction reduction of a substrate

A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a... Tokyo Electron Limited

Method of in situ hard mask removal

Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece comprising a substrate, an intermediary layer, a hard mask layer, and a photoresist layer in an etch chamber. The method may also include etching the hard mask layer to... Tokyo Electron Limited

Spacer formation for self-aligned multi-patterning technique

Embodiments of systems and methods for spacer formation for SAMP techniques are described. In an embodiment a method includes providing a substrate with a spacer having a conformal coating. The method may also include performing a spacer freeze treatment process. Additionally, the method may include performing an etch and clean... Tokyo Electron Limited

Substrate processing apparatus and substrate transfer method

A substrate processing apparatus includes: a substrate conveyance area; a substrate storage conveyance area; a substrate storage storing shelf; a first purge gas supply unit that supplies a purge gas into the substrate storage on the substrate storage storing shelf; an integrated flow rate acquiring unit that acquires an integrated... Tokyo Electron Limited

Substrate processing apparatus and transferring substrate

There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the... Tokyo Electron Limited

Method of patterning intersecting structures

Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least... Tokyo Electron Limited

Method of filling recesses in substrate with tungsten

A method of filling recesses in a substrate with tungsten includes preparing the substrate within a chamber of a film forming apparatus, performing a first cycle at least once, the first cycle comprising introducing a tungsten-containing precursor gas into the chamber, purging the chamber, introducing a hydrogen-containing gas into the... Tokyo Electron Limited

Antenna device, plasma generating device using the same, and plasma processing apparatus

There is provided an antenna device which includes: a plurality of antenna members installed to extend along a predetermined circling shape having a longitudinal direction and a lateral direction, the antenna members including end portions connected to each other so as to form a pair in which connection portions in... Tokyo Electron Limited

03/15/18 / #20180073911

Method of inspecting gas supply system, calibrating flow controller, and calibrating secondary reference device

A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a... Tokyo Electron Limited

03/15/18 / #20180074407

Processing liquid supplying apparatus and supplying processing liquid

A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the... Tokyo Electron Limited

03/15/18 / #20180076021

Substrate processing apparatus

A substrate processing apparatus includes an inner tube installed to accommodate a plurality of substrates and having a first opening, an outer tube configured to surround the inner tube, a movable wall installed inside the inner tube or between the inner tube and the outer tube, configured to be movable,... Tokyo Electron Limited

03/15/18 / #20180076027

Selective metal oxide deposition using a self-assembled monolayer surface pretreatment

Embodiments of the invention provide methods for selective film deposition using a surface pretreatment. According to one embodiment, the method includes providing a substrate containing a dielectric layer and a metal layer, exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate,... Tokyo Electron Limited

03/15/18 / #20180076030

Sic film forming method and sic film forming apparatus

There is provided a SiC film forming method for forming a SiC film on a workpiece, including: a first step of forming a carbon film on the workpiece; and a second step of exposing the carbon film to a silicon-containing gas and causing silicon to be combined into the carbon... Tokyo Electron Limited

03/15/18 / #20180076048

Method of etching silicon oxide and silicon nitride selectively against each other

Silicon oxide and silicon nitride can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the silicon oxide of the processing target object by generating plasma of a processing gas containing carbon, hydrogen and fluorine within the chamber... Tokyo Electron Limited

03/15/18 / #20180076057

Substrate processing apparatus and substrate processing method

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the... Tokyo Electron Limited

03/15/18 / #20180076066

Substrate processing method, substrate processing system and substrate processing apparatus

A technique enabling a stable resist pattern forming process, when substrate processing apparatuses that perform a resist coating process separately from a developing process. A wafer having been heated after a resist coating process in a first substrate processing apparatus is also heated before an exposure process in a second... Tokyo Electron Limited

03/15/18 / #20180076087

Film forming method and film forming system

In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ALD method or a... Tokyo Electron Limited

03/08/18 / #20180065065

Treatment solution supply apparatus

A treatment solution supply apparatus for supplying a treatment solution to a treatment solution discharge unit that discharges the treatment solution to a treatment body, includes: a temporary storage apparatus that temporarily stores the treatment solution supplied from a treatment solution supply source that stores the treatment solution; a filter... Tokyo Electron Limited

03/08/18 / #20180065843

Substrate treatment method, computer storage medium and substrate treatment system

A substrate treatment method using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer includes a polymer separating step, wherein a ratio of a molecular weight of the hydrophilic polymer in the block copolymer is adjusted to 20% to 40% so that the hydrophilic polymers align at positions... Tokyo Electron Limited

03/08/18 / #20180066221

Buffer tank and culture system

A buffer tank for storing a culture medium for cell culture, includes: a tank main body including a cylindrical inner surface extending in a vertical direction, an inverted conical storage bottom surface formed below the cylindrical inner surface, and a storage space defined by the cylindrical inner surface and the... Tokyo Electron Limited

03/08/18 / #20180066363

Vortical atomizing nozzle assembly, vaporizer, and related methods for substrate processing systems

A vortical atomizing nozzle assembly, vaporizer, and related methods are disclosed for substrate processing systems. The vaporizer introduces an atomized or vaporized liquid into a substrate processing system and includes a vaporizer chamber, a nozzle assembly coupled to the inlet for the vaporizer chamber, and a carrier gas channel coupled... Tokyo Electron Limited

03/08/18 / #20180067403

Location-specific tuning of stress to control bow to control overlay in semiconductor processing

Techniques herein include systems and methods for correcting pattern overlay errors by correcting or adjusting bowing of wafers. Location-specific tuning of stress on semiconductor substrates reduces overlay error. Location-specific tuning of stress independently modifies specific regions, areas, or point locations on a substrate to change wafer bow at those specific... Tokyo Electron Limited

03/08/18 / #20180068831

Endpoint detection algorithm for atomic layer etching (ale)

Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient... Tokyo Electron Limited

03/08/18 / #20180068852

Method of quasi atomic layer etching

Techniques herein include an etch process that etches a layer of material incrementally, similar to mono-layer etching of atomic layer etching (ALE), but not necessarily including self-limiting, mono-layer action of ALE. Such techniques can be considered as quasi-atomic layer etching (Q-ALE). Techniques herein are beneficial to precision etching applications such... Tokyo Electron Limited

03/08/18 / #20180068859

Location-specific tuning of stress to control bow to control overlay in semiconductor processing

Techniques herein include systems and methods for correcting pattern overlay errors by correcting or adjusting bowing of wafers. Location-specific tuning of stress on semiconductor substrates reduces overlay error. Location-specific tuning of stress independently modifies specific regions, areas, or point locations on a substrate to change wafer bow at those specific... Tokyo Electron Limited

03/08/18 / #20180068860

Location-specific tuning of stress to control bow to control overlay in semiconductor processing

Techniques herein include systems and methods for correcting pattern overlay errors by correcting or adjusting bowing of wafers. Location-specific tuning of stress on semiconductor substrates reduces overlay error. Location-specific tuning of stress independently modifies specific regions, areas, or point locations on a substrate to change wafer bow at those specific... Tokyo Electron Limited

03/08/18 / #20180068861

Location-specific tuning of stress to control bow to control overlay in semiconductor processing

Techniques herein include systems and methods for correcting pattern overlay errors by correcting or adjusting bowing of wafers. Location-specific tuning of stress on semiconductor substrates reduces overlay error. Location-specific tuning of stress independently modifies specific regions, areas, or point locations on a substrate to change wafer bow at those specific... Tokyo Electron Limited

03/08/18 / #20180068865

Etching method

A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride includes a first step of exposing a target object having the first region and the second region to a plasma of a processing gas containing a fluorocarbon gas, etching the... Tokyo Electron Limited

03/08/18 / #20180068873

Substrate liquid processing apparatus

A substrate liquid processing apparatus includes a liquid unit configured to process a liquid processing unit configured to process a substrate with multiple kinds of processing liquids, an exhaust pipe connected to the liquid processing unit, and configured to allow an exhaust gas from the liquid processing unit to flow... Tokyo Electron Limited

03/08/18 / #20180068899

Wrap-around contact integration scheme

Embodiments of the invention provide a wrap-around contact integration scheme that includes sidewall protection during contact formation. According to one embodiment, a substrate processing method includes providing a substrate containing raised contacts in a first dielectric film and a second dielectric film above the first dielectric film, depositing a metal-containing... Tokyo Electron Limited

03/08/18 / #20180068906

Anomaly detection method and semiconductor manufacturing apparatus

A method performed by a semiconductor manufacturing apparatus includes calculating, by a processor of the semiconductor manufacturing apparatus, 3 standard deviations of process condition measurements obtained at a predetermined interval from log information of processing of substrates that have been correctly processed, calculating at least one of an upper limit... Tokyo Electron Limited

03/01/18 / #20180056317

Support structure for suspended injector and substrate processing apparatus using same

A support structure for a suspended injector includes a suspended injector having a tubular vertical portion extending in a vertical direction, one or more chamfered portions formed by chamfering an outer peripheral surface near an upper end of the tubular vertical portion, a pair of holding members each having a... Tokyo Electron Limited

03/01/18 / #20180057933

Method for producing graphene

There is provided a method for producing graphene which includes a first growth step of supplying a carbon-containing gas into a chamber in which a metal catalyst is disposed to grow graphene on a surface of the metal catalyst, an activation step of supplying a process gas containing an oxygen... Tokyo Electron Limited

03/01/18 / #20180059539

Substrate processing method, substrate processing apparatus and storage medium

A substrate processing apparatus according to the present disclosure includes: a nozzle that ejects a processing liquid to a wafer; a force-feeding unit that force-feeds the processing liquid to the nozzle side; a liquid feeding pipeline that includes first and second valves and guides the processing liquid from the force-feeding... Tokyo Electron Limited

03/01/18 / #20180061619

Plasma processing apparatus

A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by... Tokyo Electron Limited

03/01/18 / #20180061640

In-situ spacer reshaping for self-aligned multi-patterning methods and systems

Methods and systems for in-situ spacer reshaping for self-aligned multi-patterning are described. In an embodiment, a method of forming a spacer pattern on a substrate may include providing a substrate with a spacer. The method may also include performing a passivation treatment to form a passivation layer on the spacer.... Tokyo Electron Limited

03/01/18 / #20180061653

Method of quasi-atomic layer etching of silicon nitride

A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing H and optionally a noble gas, and... Tokyo Electron Limited

03/01/18 / #20180061655

Method of processing target object

A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion. The groove portion is provided on a main surface of the target object, provided on the etching target layer and defined... Tokyo Electron Limited

Patent Packs
03/01/18 / #20180061657

Substrate processing method

There is provided a substrate processing method performed on a substrate having a recess formed in a surface thereof, a first silicon-containing film formed on a bottom surface of the recess, a second silicon-containing film formed on both sides of the recess, the method including: depositing a carbon-based deposit on... Tokyo Electron Limited

03/01/18 / #20180061658

Self-aligned patterning process utilizing self-aligned blocking and spacer self-healing

A multiple patterning process is provided with a self-aligned blocking (SAB) technique. The SAB technique trades off difficult overlay requirements for more manageable etch selectivity requirements between the various layers utilized for the patterning process. As disclosed herein, damage to sidewalls resulting from etching at the self-aligned block masking step... Tokyo Electron Limited

03/01/18 / #20180061681

Plasma processing apparatus

There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source... Tokyo Electron Limited

03/01/18 / #20180061688

Substrate processing apparatus

A substrate processing apparatus includes a plurality of processing units and a gas supply unit. The plurality of processing units are stacked and arranged, and each configured to hold a substrate in a chamber and to process the substrate by a processing liquid, and the gas supply unit is provided... Tokyo Electron Limited

03/01/18 / #20180061690

Substrate processing apparatus, substrate processing method, and recording medium

A substrate processing apparatus includes a nozzle for discharging a processing solution, a processing solution supply part for supplying the processing solution to the nozzle and a controller. The processing solution supply part includes a tank, a first conduit for guiding the processing solution from the tank to the nozzle,... Tokyo Electron Limited

03/01/18 / #20180061692

Substrate processing method and substrate processing system

A substrate processing method is provided. The substrate processing method includes placing a substrate storage container storing a substrate on a load port; automatically determining a type of the substrate stored in the placed substrate storage container; and, by referring to a storage unit that stores parameter data set related... Tokyo Electron Limited

03/01/18 / #20180061700

Manufacturing methods to protect ulk materials from damage during etch processing to obtain desired features

Embodiments are disclosed for processing microelectronic workpieces having patterned structures that include ultra-low dielectric constant (k) (ULK) material layers. In particular, embodiments are disclosed that deposit protective layers to protect ULK features during etch processing of patterned structures within substrates for microelectronic workpieces. For certain embodiments, these protective layers are... Tokyo Electron Limited

02/22/18 / #20180051374

Film-forming apparatus, film-forming method, and storage medium

A film-forming apparatus includes: a rotary table installed inside a vacuum vessel, and including a substrate mounting region, on which the substrate is mounted, formed at one surface side of the rotary table; a heating part for heating the substrate mounted on the rotary table; a first process region in... Tokyo Electron Limited

02/22/18 / #20180053635

Plasma processing apparatus

A plasma processing apparatus includes at least one asymmetry member that causes a non-uniformity of plasma density around a high frequency electrode in an azimuthal direction; and a plasma density distribution controller. The plasma density distribution controller includes a first conductor which has first and second surfaces facing opposite directions... Tokyo Electron Limited

02/22/18 / #20180053637

Method for inspecting shower plate of plasma processing apparatus

The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of... Tokyo Electron Limited

02/22/18 / #20180053688

Method of metal filling recessed features in a substrate

A method of void-less metal filling of recessed features in a substrate is provided. The method includes providing a substrate containing recessed features therein, and filling the recessed features with a metal, where the metal is deposited in the recessed features by gas phase deposition at substrate temperature and a... Tokyo Electron Limited

02/15/18 / #20180044624

Cell culture device, cartridge for culture medium replacement use, and replacing culture medium

A cell culture device includes: an incubator part for accommodating a closed-system culture container; a cartridge for culture medium replacement use having a liquid supply flow path and a liquid collection flow path, the cartridge removably attachable to the culture container; a culture medium supply part for supplying a liquid... Tokyo Electron Limited

02/15/18 / #20180046082

High-purity dispense unit

Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A modular hydraulic... Tokyo Electron Limited

02/15/18 / #20180047541

Film forming apparatus and gas injection member used therefor

A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on... Tokyo Electron Limited

02/15/18 / #20180047545

Substrate processing apparatus and substrate processing method

A substrate processing method includes an etching step of mounting a substrate on a surface of a rotatory table arranged in a vacuum chamber and supplying an etching gas into the vacuum chamber while rotating the rotary table to etch a film formed on a surface of the substrate. The... Tokyo Electron Limited

Patent Packs
02/15/18 / #20180047547

Slip ring, support mechanism, and plasma processing apparatus

Disclosed is a slip ring including: a conductive rotor that is rotatable around a rotation axis; a conductive stator provided coaxially with the rotor; a conductive sphere disposed between the rotor and the stator to form an electric path between the rotor and the stator; and a conductive coil spring... Tokyo Electron Limited

02/15/18 / #20180047562

High-purity dispense system

Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A process fluid... Tokyo Electron Limited

02/15/18 / #20180047563

High-precision dispense system with meniscus control

Techniques herein include a bladder-based dispense system using an elongate bladder configured to selectively expand and contract to assist with dispense actions. This dispense system compensates for filter-lag, which often accompanies fluid filtering for microfabrication. This dispense system also provides a high-purity and high precision dispense unit. A meniscus sensor... Tokyo Electron Limited

02/15/18 / #20180047577

Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

Embodiments of the invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method includes providing a substrate, and exposing the substrate to hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method includes providing... Tokyo Electron Limited

02/15/18 / #20180047578

Method of processing target object

A method of processing a target object is provided. The target object has an etching target layer, an organic film on the etching target layer and a mask on the organic film. The organic film includes a first layer and a second layer, the mask is provided on the first... Tokyo Electron Limited

02/15/18 / #20180047584

Method for etch-based planarization of a substrate

Techniques herein provide an etch-based planarization technique. An initial film is deposited on a substrate. Deposition of this initial film results in a non-planar film because of differences in area density of underlying structures (for example, open areas compared to closely spaced trenches). Etch processes are executed that use a... Tokyo Electron Limited

02/15/18 / #20180047592

Liquid processing apparatus and liquid processing method

There is provided a guide member 3 in which an inclined surface 32 thereof is inclined downwardly outwards from an edge portion of a rear surface of a horizontally held wafer W; and a cylindrical surrounding member 2 which surrounds the wafer W and in which an upper peripheral portion... Tokyo Electron Limited

02/15/18 / #20180047624

Cu wiring forming method and semiconductor device manufacturing method

A method of forming, on a substrate having on a surface thereof a film having a trench of a preset pattern and a via at a bottom of the trench, a Cu wiring by burying Cu or Cu alloy in the trench and the via includes forming a barrier film... Tokyo Electron Limited

02/15/18 / #20180047647

Analysis silanol group of substrate surface

A silanol group on a surface of a substrate having silicon on the surface thereof can be quantitatively analyzed with high accuracy. An analysis method for a silanol group on a substrate surface includes chemically modifying the silanol group by supplying a gas of a metal compound to a substrate... Tokyo Electron Limited

02/15/18 / #20180047699

Bonding apparatus and bonding system

Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below;... Tokyo Electron Limited

02/15/18 / #20180047787

Nonvolatile storage device and fabricating nonvolatile storage device

A nonvolatile storage device includes: first wirings arranged in first and second directions that intersect each other, and extending in a third direction perpendicular to the first and second directions; second wirings extending in the first direction, and each of the second wiring installed at a predetermined interval from each... Tokyo Electron Limited

02/15/18 / #20180047832

Extension region for a semiconductor device

A method of forming a semiconductor device having a channel and a source-drain coupled to the channel. The method includes etching a channel region such that an end of the channel region forms a recess within a gate structure surrounding the channel region. An extension region is formed in contact... Tokyo Electron Limited

02/08/18 / #20180037989

Film forming method, film forming system and surface processing method

A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a... Tokyo Electron Limited

02/08/18 / #20180037990

Film forming apparatus, forming film, and storage medium

An apparatus for forming a thin film on a substrate in a processing container under vacuum atmosphere by alternately supplying a first gas and a second gas, which are process gases, onto the substrate, including: n first processing regions spaced from each other along circumferential direction of the processing container... Tokyo Electron Limited

02/08/18 / #20180037991

Gas supply apparatus and gas supply method

A gas supply apparatus for forming a film by supplying a source gas, a substitution gas, and a reaction gas to a substrate in a processing chamber includes a source gas flow passage; a reaction gas flow passage; a first and second carrier gas flow passages connected to the source... Tokyo Electron Limited

02/08/18 / #20180037992

Silicon nitride film forming method and silicon nitride film forming apparatus

A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times,... Tokyo Electron Limited

02/08/18 / #20180037995

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes: a mounting stand provided with a substrate mounting region in which a workpiece substrate is mounted; a process vessel for defining a process chamber including a first region and a second region through which the substrate mounting region passes in order; a precursor gas supply... Tokyo Electron Limited

02/08/18 / #20180040468

Substrate processing apparatus, substrate processing method, and storage medium with program stored therein for executing substrate processing method

The present disclosure relates to a processing liquid supplying unit configured to supply a processing liquid that contains a removing agent of an adhered substance and a solvent having a boiling point lower than a boiling point of the removing agent to a substrate, a substrate heating unit configured to... Tokyo Electron Limited

02/08/18 / #20180040471

Liquid processing method, substrate processing apparatus and recording medium

A liquid processing method can remove pure water existing within a pattern of a substrate and replace the pure water with a solvent rapidly. The liquid processing method of supplying the pure water onto the substrate, which is horizontally held and has the pattern formed on a surface thereof, and... Tokyo Electron Limited

02/08/18 / #20180040484

Semiconductor system

A semiconductor system shares information on a semiconductor manufacturing apparatus between first and second semiconductor manufacturing apparatuses through direct communication. The first semiconductor manufacturing apparatus includes a first acquisition unit acquiring first information on the first semiconductor manufacturing apparatus, a first storage unit storing the acquired first information, and a... Tokyo Electron Limited

02/08/18 / #20180040503

Substrate mounting method and substrate mounting device

There is provided a substrate mounting method of brining a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate,... Tokyo Electron Limited

02/08/18 / #20180040695

Three-dimensional semiconductor device and fabrication

A semiconductor device including a substrate and a gate region of a field effect transistor formed on the substrate. The gate region includes vertically stacked nanowires having longitudinal axes that extend parallel with a working surface of the substrate. A given stack of vertically stacked nanowires includes at least two... Tokyo Electron Limited








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