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Tokyo Electron Limited patents (2015 archive)


Recent patent applications related to Tokyo Electron Limited. Tokyo Electron Limited is listed as an Agent/Assignee. Note: Tokyo Electron Limited may have other listings under different names/spellings. We're not affiliated with Tokyo Electron Limited, we're just tracking patents.

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12/31/15 / #20150380282

Plasma processing apparatus and plasma processing method

A controller disclosed herein drives, in a first step, a high frequency generating source at a first energy condition, and drives, in a second step, a high frequency generating source at a second energy condition. Prior to a switching time of the first step and the second step, the controller switches gas species supplied from the gas supply system into the processing container, and sets a gas flow rate in an initial period just after the switching to be larger than a gas flow rate in a stabilization period after lapse of the initial period.. ... Tokyo Electron Limited

12/31/15 / #20150380280

Flow-rate regulator device, diluted chemical-liquid supply device, liquid processing apparatus and its operating system

A flow-rate regulator device for controlling a flow rate of a liquid includes a first flow-rate regulator component positioned on an upstream side of a liquid line, and a second flow-rate regulator component positioned on a downstream side of the liquid line and connected in series to the first flow-rate regulator component. The first flow-rate regulator component adjusts a degree of opening such that a flow rate of liquid flowing through the liquid line is set a specified number of times greater than a target flow rate when the second flow-rate regulator component has a full opening, and the second flow-rate regulator component adjusts a degree of opening such that the flow rate of the liquid flowing through the liquid line is to be at the target flow rate when the first flow-rate regulator component is adjusted to have the degree of opening.. ... Tokyo Electron Limited

12/31/15 / #20150380271

Neutral beam etching of cu-containing layers in an organic compound gas environment

A method and apparatus for dry etching pure cu and cu-containing layers for manufacturing integrated circuits. The invention uses a directional beam of o-atoms with high kinetic energy to oxidize the cu and cu-containing layers, and organic compound etching reagents that react with the oxidized cu to form volatile cu-containing etch products. ... Tokyo Electron Limited

12/31/15 / #20150380268

Etching method and storage medium

An etching method includes: disposing a substrate to be processed within a chamber, the substrate to be processed having a silicon oxide film formed on a surface thereof and a silicon nitride film formed adjacent to the silicon oxide film; and selectively etching the silicon oxide film with respect to the silicon nitride film by supplying hf gas or hf gas and f2 gas, an alcohol gas or water vapor, and an inert gas into the chamber.. . ... Tokyo Electron Limited

12/31/15 / #20150377812

Pressure sensor and method for manufacturing the same

Disclosed is a pressure sensor that outputs a temperature change caused in an electrical resistor according to a pressure of a gas, as a resistance change in the electrical resistor. The pressure sensor includes: a base substrate including a recess formed therein, a floating film formed on the base substrate, a heater formed on a surface of the floating film and configured to heat the floating film when a current flows therein, and a temperature sensor formed as the electrical resistor on the surface of the floating film. ... Tokyo Electron Limited

12/31/15 / #20150377801

X-ray nondestructive testing device

There is provided an x-ray nondestructive testing device which irradiates x-rays to an article, the article including a substrate having a predetermined x-ray absorption coefficient and a measurement target object disposed therein and having another x-ray absorption coefficient differing from that of the substrate, the device including: an x-ray source configured to irradiate the x-rays to the article; a detector configured to detect the transmission amounts of the x-rays passed through the article at at least paired different locations; a detection position specifying designator configured to specify the paired different locations as a set of paired locations based on a pre-stored design information; a driving mechanism configured to move the detector to the set of paired locations; and an operation calculator configured to calculate the thickness of the measurement target object based on the transmission amounts of the x-rays detected by the detector.. . ... Tokyo Electron Limited

12/31/15 / #20150377735

Pressure sensor and method for manufacturing the same

Disclosed is a method for manufacturing a sensor module that generates heat through an electric resistor adapted to be exposed to a gas, and outputs a temperature change caused in the electric resistor according to a pressure of the gas, as a resistance change of the electric resistor. The method includes: forming an insulation layer on a substrate in which the insulation layer is an oxide film or a nitride film; and forming a conductor layer on the insulation layer under a temperature condition of 300° c. ... Tokyo Electron Limited

12/31/15 / #20150377732

Pressure measuring device and pressure measuring method

Provided is a pressure measuring device including a first electric resistor that is exposed to gas; a second electric resistor that is exposed to gas and has the same structure as that of the first electric resistor; a first measuring unit that measures a first voltage drop generated across the first electric resistor; a second measuring unit that measures a second voltage drop generated across the second electric resistor; a third measuring unit that measures a third voltage drop generated across the first electric resistor; a calculating unit that calculates a correction value that corrects the third voltage drop, based on a difference between the first voltage drop and the second voltage drop; and an output unit that corrects the third voltage drop using the calculated correction value and outputs a pressure value according to the third voltage value after the correction.. . ... Tokyo Electron Limited

12/31/15 / #20150377571

System including temperature-controllable stage, semiconductor manufacturing equipment and stage temperature control method

There is provided a system including a temperature-controllable stage, which includes: a disc-shaped plate having a front surface on which a substrate is mounted and a rear surface; a heat exchanger configured to individually supply a heat exchange medium to a plurality of regions two-dimensionally arranged to face the rear surface of the plate and configured to individually recover the heat exchange medium supplied to the regions, the plurality of regions being obtained by dividing a plurality of zones defined to face the rear surface of the plate in the heat exchanger; and a plurality of valve units configured to control, for each of the plurality of zones, the supply or cutoff of the heat exchange medium to the plurality of regions by the heat exchanger.. . ... Tokyo Electron Limited

12/31/15 / #20150376789

Vertical heat treatment apparatus and method of operating vertical heat treatment apparatus

A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. ... Tokyo Electron Limited

12/31/15 / #20150375170

Treatment solution supply method, treatment solution supply apparatus, and non-transitory computer-readable recording medium

A treatment solution supply method of supplying a treatment solution to a substrate, the method includes the steps of: applying a dc voltage to the treatment solution; detecting a potential difference between two points in the treatment solution in a state where the dc voltage is applied to the treatment solution; and increasing the dc voltage when the detected potential difference is less than a predetermined reference value.. . ... Tokyo Electron Limited

12/24/15 / #20150373783

Placing table and plasma processing apparatus

Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. ... Tokyo Electron Limited

12/24/15 / #20150371894

Substrate processing method, substrate processing apparatus, substrate processing system and recording medium

A substrate processing method can remove a part of a processing target film formed on a surface of a substrate w under a normal pressure atmosphere while suppressing an influence upon the substrate. A source material of the processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere, is coated on the substrate w, and the processing target film is formed by heating the source material coated on the substrate w. ... Tokyo Electron Limited

12/24/15 / #20150371853

Coating treatment method with airflow control, and non-transitory recording medium having program recorded thereon for executing coating treatment with airflow control

A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.. . ... Tokyo Electron Limited

12/24/15 / #20150371830

Method for etching insulation film

Disclosed is a method for etching an insulation film of a processing target object. The method includes: in a first term, periodically switching on and off of a high frequency power so as to excite a processing gas containing fluorocarbon and supplied into a processing container of a plasma processing apparatus; and in a second term subsequent to the first term, setting the high frequency power to be continuously turned on so as to excite the processing gas supplied into the processing container. ... Tokyo Electron Limited

12/24/15 / #20150371812

Substrate processing system, gate valve and substrate transfer method

There is provided a substrate processing system which includes: at least two transfer chambers disposed adjacent each other, each of which including a transfer mechanism configured to transfer a substrate; at least one process chamber connected to each of the at least two transfer chambers, and configured to perform a process on the substrate loaded into the at least one process chamber; a gate valve configured to move into and out of a connection path interconnecting the at least two transfer chambers and configured to separate the at least two transfer chambers from each other; and a substrate holding mechanism attached to the gate valve and configured to hold the substrate.. . ... Tokyo Electron Limited

12/24/15 / #20150370204

Fixing unit of plate-shaped member, pvd processing apparatus and fixing method of plate-shaped member

A fixing unit fixes a plate-shaped member to a fixing base member. The fixing unit includes: a pressing unit configured to press the plate-shaped member toward the fixing base member; and a plurality of positioning units, installed at the fixing base member to be in contact with side surfaces of the plate-shaped member, and configured to place the plate-shaped member with respect to the fixing base member. ... Tokyo Electron Limited

12/24/15 / #20150368802

Film forming method and film forming apparatus

There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.. . ... Tokyo Electron Limited

12/24/15 / #20150367266

Processing liquid supply method, processing liquid supply apparatus and storage medium

Disclosed are an apparatus and a method for reducing a processing liquid consumed for removing bubbles from a new filter unit, and shortening a start-up time when the filter unit is attached in a processing liquid supply passage. The method includes: filling the processing liquid into a new filter unit, decompressing inside of the filter unit into a first pressure atmosphere in order to remove bubbles from the filter unit, boosting a pressure of the inside of the filter unit, flowing the processing liquid into the filter unit from a primary side of the filter unit, and supplying the processing liquid flowing from the filter unit to an object to be processed through a nozzle thereby performing a liquid processing and quickly removing the bubbles.. ... Tokyo Electron Limited

12/17/15 / #20150364338

Method to improve etch selectivity during silicon nitride spacer etch

Techniques herein include methods to increase etching selectivity among materials. Techniques herein include a cyclical process of etching and oxidation of a silicon nitride (sin) spacer and silicon (such as polycrystalline silicon). ... Tokyo Electron Limited

12/17/15 / #20150362839

Developing method, developing apparatus, and computer-readable storage medium

There is provided a developing method which can form a resist having a sufficiently high uniformity of cd distribution. The developing method for developing a resist film after exposure on a substrate surface to form a resist pattern, includes the sequential steps of: (a) supplying a developer to the rotating substrate; (b) reacting the resist film with the developer; and (c) removing the developer from the surface of the resist film to terminate the reaction of the resist film with the developer. ... Tokyo Electron Limited

12/17/15 / #20150362546

Probe apparatus and wafer transfer system

The present disclosure provides a probe apparatus that is capable of suppressing generation of a transfer error by adsorbing and holding a semiconductor wafer even in a case where the semiconductor wafer has been warped. The probe apparatus includes a measuring section and a loader section, that is, a transfer unit. ... Tokyo Electron Limited

12/17/15 / #20150361559

Hydrophobization treatment apparatus, hydrophobization treatment method, and hydrophobization treatment recording medium

A hydrophobization treatment apparatus includes a cooling device which cools a substrate, a light irradiation device which irradiates thermal radiation light from light sources onto front surface of the substrate, a gas supply device which supplies hydrophobization-treatment gas to the substrate, an exhaust device which exhausts the gas, a lifting device which moves the substrate such that the lifting device raises and lowers the substrate between the cooling device and light sources, and a control device which has circuitry to control the light irradiation device, the gas supply device, the exhaust device and the lifting device. The circuitry of the control device executes first gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate, and after the first control, second gas supply control to discharge and exhaust the gas into and from the space between the gas container and substrate.. ... Tokyo Electron Limited

12/17/15 / #20150361550

Film formation apparatus, film formation method, and storage medium

Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed.. . ... Tokyo Electron Limited

12/10/15 / #20150357222

Cooling processing apparatus and method for operating the same

A cooling processing apparatus includes: a processing vessel; an electrostatic chuck installed in the processing vessel, the electrostatic chuck having a mounting surface on which an object to be processed is mounted; a cooling mechanism configured to cool the electrostatic chuck; and a lamp heating device configured to remove moisture attached to the mounting surface. Further, a method for operating the cooling processing apparatus includes: decompressing the space in the processing vessel by using the exhaust device; removing the moisture attached to the mounting surface of the electrostatic chuck by using the lamp heating device; and cooling the electrostatic chuck by using the cooling mechanism after the removal of the moisture performed by the lamp heating device is terminated.. ... Tokyo Electron Limited

12/10/15 / #20150357188

Film forming method, computer storage medium, and film forming system

The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.. . ... Tokyo Electron Limited

12/10/15 / #20150357187

Modification processing method and method of manufacturing semiconductor device

A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.. ... Tokyo Electron Limited

12/10/15 / #20150357165

Plasma processing apparatus and cleaning method

Disclosed is a plasma processing apparatus including: a processing container; a susceptor configured to serve as a lower electrode and mount a processing target substrate thereon; a shower head provided above the susceptor to supply a processing gas into the processing container; an upper electrode provided above the placing table; a high frequency power supply configured to apply a high frequency power to the susceptor to generate plasma of the processing gas within the processing container; and a dc voltage application unit configured to apply a dc voltage to the upper electrode. The shower head includes a uel base, and a cel provided on the uel base at susceptor side, and an insulating portion provided between the uel base and the cel. ... Tokyo Electron Limited

12/10/15 / #20150354062

Thin film forming method and thin film forming appartus

A thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times.. ... Tokyo Electron Limited

12/10/15 / #20150354060

Film formation apparatus, film formation method, and storage medium

A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.. . ... Tokyo Electron Limited

12/10/15 / #20150353884

Method of subculturing pluripotent stem cells

The present invention provides a method of simply and uniformly subculturing pluripotent stem cells. The method includes the steps of dispersing cell masses obtained from passaging of the pluripotent stem cells into a single cell level, and subsequently, rapidly forming cell aggregates.. ... Tokyo Electron Limited

12/10/15 / #20150352669

Etching method and bevel etching apparatus

An etching method using a bevel etching apparatus is provided. The bevel etching apparatus is configured to etch a substrate by emitting a laser beam and includes a laser generator and a power meter configured to measure the laser beam output from the laser generator. ... Tokyo Electron Limited

12/10/15 / #20150352587

Liquid coating method, liquid coating apparatus, and computer-readable storage medium

Disclosed is a liquid coating method. The method executes processes of: coating a coating liquid in a spiral form on a surface of a substrate by ejecting the coating liquid from the ejection nozzle while moving the ejection nozzle in a predetermined direction between the rotary axis and a peripheral edge of the substrate during rotation of the substrate; making a linear velocity at an ejection position of the coating liquid from the ejection nozzle substantially constant by reducing a number of rotations of the substrate as the ejection position is positioned closer to the peripheral edge of the substrate; and making an ejection flow rate of the coating liquid ejected from the ejection nozzle substantially constant by changing a gap between the ejection port of the ejection nozzle and the surface of the substrate based on a flow rate of the coating liquid before ejection from the ejection nozzle.. ... Tokyo Electron Limited

12/03/15 / #20150349668

Electrostatic attraction apparatus, electrostatic chuck and cooling treatment apparatus

Provided is an electrostatic attraction apparatus in which a first insulating layer is formed on a base in an electrostatic chuck. A first portion of the first insulating layer extends on a first face of the base and a second portion of the first insulating layer extends on at least a portion of a second face of the base. ... Tokyo Electron Limited

12/03/15 / #20150348762

Electrode plate for plasma etching and plasma etching apparatus

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.. . ... Tokyo Electron Limited

12/03/15 / #20150348761

Top dielectric quartz plate and slot antenna concept

Techniques disclosed herein include an apparatus for treating substrates with plasma generated within a plasma processing chamber. In one embodiment, dielectric plates, of a plasma system can include structural features configured to assist in generating a uniform plasma. ... Tokyo Electron Limited

12/03/15 / #20150348758

Impedance matching slug, impedance matching device, electromagnetic wave transmission device, electromagnetic wave radiation device, and plasma processing apparatus

An impedance matching slug that performs an impedance matching process in a waveguide is axially movably interposed between an outer conductor and an inner conductor of the waveguide. The impedance matching slug includes: a cylindrical first part and a cylindrical second part which are coupled to each other, wherein each of the first part and the second part has an inner circumferential surface facing the inner conductor and an outer circumferential surface facing the outer conductor, wherein the second part is disposed in the outside of the first part in such a manner that the inner circumferential surface of the second part is in contact with the outer circumferential surface of the first part, wherein one of the first part and the second part is constituted by a conductor, and wherein the other of the first part and the second part is constituted by a dielectric.. ... Tokyo Electron Limited

12/03/15 / #20150348756

Integrated induction coil & microwave anntenna as an all-planar source

This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (icp) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an icp coil for a radio frequency (rf) power source and as a slot antenna for a microwave source.. ... Tokyo Electron Limited

12/03/15 / #20150345015

Film deposition apparatus

A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. ... Tokyo Electron Limited

12/03/15 / #20150343755

Peeling device, peeling system and peeling method

A peeling device which peels a superposed substrate obtained by bonding a first substrate and a second substrate together, from one end portion of the superposed substrate toward the other end portion thereof, includes a first holding unit configured to hold the first substrate of the superposed substrate, a second holding unit configured to hold the second substrate of the superposed substrate, and a moving unit configured to move the first holding unit away from the second holding unit. The moving unit is configured to move in at least a peeling direction of the superposed substrate.. ... Tokyo Electron Limited

11/26/15 / #20150340259

Substrate processing apparatus, cover opening and closing mechanism,shielding mechanism, and method for purging container

Provided is a substrate processing apparatus that can suppress the amount of inert gas and dry gas used and also can prevent reductions in throughput. A substrate processing apparatus is provided with: a loader module; an opener that removes a cover from a foup having a main body, an opening and the cover, to communicate the inside of the foup with the inside of the loader module through the opening; an n2 gas supply unit that is attached to the loader module and supplies n2 gas to the inside of the foup; and two slide cover plates movable respectively along an opening surface of the opening. ... Tokyo Electron Limited

11/26/15 / #20150340258

Substrate transport apparatus

A substrate transport apparatus for detecting with high accuracy rubbing between a substrate held in a substrate holding tool, and a support which transports a substrate. The substrate transport apparatus includes: a stage for placing thereon the substrate holding tool; a substrate transport mechanism including the support for the substrate, and a back-and-forth movement mechanism for moving the support, the mechanism configured to transfer a substrate to/from the substrate holding tool; a lifting mechanism for moving the support up and down with respect to the substrate holding tool; a sound amplifying section for amplifying a contact sound generated by contact between a substrate held in the substrate holding tool and the support; and a detection section for detecting rubbing between a substrate and the support based on a detection signal from a vibration sensor which detects a solid-borne sound, propagating through the substrate holding tool, and outputs the detection signal.. ... Tokyo Electron Limited

11/26/15 / #20150340243

Plasma etching method

In a plasma etching method, with respect to a substrate to be processed, which has a base layer, a silicon oxide film, and an etching mask formed in this order, the etching mask having an etching pattern formed thereon and being formed of polysilicon, a silicon-containing deposit is deposited on a surface of the etching mask using a plasma generated from a processing gas, while applying a negative direct current voltage to an upper electrode formed of silicon. Furthermore, in the plasma etching method, the silicon oxide film is etched using plasma generated from a first cf-based gas using, as a mask, the etching mask having the silicon-containing deposit deposited thereon.. ... Tokyo Electron Limited

11/26/15 / #20150340210

Plasma processing method

A plasma processing method includes: mounting a substrate on a mounting table serving as a first electrode in a vacuum chamber, generating plasma of a processing gas by applying a high frequency power between the first electrode and a second electrode, and performing a plasma process on the substrate by the plasma; supplying a cleaning gas into the vacuum chamber without mounting a substrate on the mounting table, and exciting the cleaning gas into plasma by applying a high frequency power between the first electrode and the second electrode; and applying, while exciting the cleaning gas into the plasma, a dc voltage to a dc voltage application electrode provided in a region exposed to the plasma.. . ... Tokyo Electron Limited

11/26/15 / #20150336114

Coating processing apparatus

At the time of initiating coating, when a first end of an ejecting port of a coating nozzle is located at one end of a peripheral edge of a wafer, the wafer and the coating nozzle are relatively moved by a moving mechanism while exposing a coating liquid from the ejecting port. During the coating, the wafer and the coating nozzle are relatively moved by the moving mechanism while the coating liquid ejected from the ejecting port is in contact with the wafer, to coat the coating liquid on the wafer. ... Tokyo Electron Limited

11/19/15 / #20150332961

Cu wiring fabrication method and storage medium

Cu wiring fabrication method for fabricating cu wiring with respect to substrate having interlayer dielectric film having trench formed thereon, includes: forming barrier film on surface of the trench; forming ru film on surface of the barrier film by cvd; burying the trench by forming cu film or cu alloy film on the ru film; forming cu film or cu alloy film at corners of bottom of the trench while re-sputtering the formed cu film or cu alloy film in a condition where first formed cu film or cu alloy film re-sputtered by an ion action of the plasma generation gas; and subsequently burying the cu film or the cu alloy film in the trench in condition where the cu film or the cu alloy film is formed on field portion of the substrate, and reflows in the trench by an ion action of the plasma generation gas.. . ... Tokyo Electron Limited

11/19/15 / #20150332932

Method for etching etching target layer

Disclosed is an etching method for etching an etching target layer. The etching method includes: a first step of depositing a plasma reaction product on a mask layer made of an organic film formed on the etching target layer; and after the first step, a second step of etching the etching target layer. ... Tokyo Electron Limited

11/19/15 / #20150332929

Plasma etching method and plasma etching apparatus

Disclosed is a plasma etching method including a deposition process and an etching process. For a processing target object including a base layer and a photoresist having a predetermined pattern which are laminated in sequence, the deposition process deposits a protective layer including silicon and carbon on the photoresist of the processing target object by plasma of a first processing gas including silicon tetrachloride gas, methane gas, and hydrogen gas. ... Tokyo Electron Limited

11/19/15 / #20150332917

Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film

A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.. . ... Tokyo Electron Limited

11/19/15 / #20150332898

Plasma processing apparatus

Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.. ... Tokyo Electron Limited

11/19/15 / #20150332895

Plasma processing method and plasma processing apparatus

A plasma processing method is provided. In the method, a distribution of an amount of processing within a surface of a substrate by a plasma process performed on a film deposited on the substrate is obtained. ... Tokyo Electron Limited

11/19/15 / #20150332167

System and method for modeling and/or analyzing manufacturing processes

Systems and techniques for modeling and/or analyzing manufacturing processes are presented. A dataset component generates a plurality of binary classification datasets based on process data associated with one or more fabrication tools. ... Tokyo Electron Limited

11/19/15 / #20150332039

Operation limiting device, operation limiting method, and storage medium

Provided is an operation limiting device which makes it possible to achieve more robust security and safety in processing of a workpiece by a processing apparatus. The operation limiting device limits operations relating to processing of a workpiece by a processing apparatus, and is provided with: an authentication unit for authenticating each of a plurality of users; a receiving unit for receiving an operation request or permission for said operation, from a plurality of authenticated users; an operation enabling unit for enabling an operation if an operation request or permission has been received from the plurality of authenticated users; and a releasing unit for releasing the operation enabled state set by the operation enabling unit if processing relating to the operation has terminated or if a predetermined period of time corresponding to the operation has elapsed.. ... Tokyo Electron Limited

11/19/15 / #20150331322

Method and apparatus for increased recirculation and filtration in a photoresist dispense system using a recirculation pump/loop

An apparatus for dispensing a liquid onto a substrate may comprise a reservoir for storing the liquid to be dispensed; a filter comprising an inlet and an outlet, the filter inlet in fluidic communication with the reservoir via a first valve; a dosing pump comprising an inlet, a first outlet, and a second outlet, the dosing pump inlet in fluidic communication with the reservoir and the dosing pump second outlet in fluidic communication with the filter inlet via a second valve, the dosing pump configured to dose an amount of the liquid and pump the liquid; and a dispense nozzle in fluidic communication with the dosing pump first outlet, the dispense nozzle configured to dispense the liquid onto the substrate.. . ... Tokyo Electron Limited

11/19/15 / #20150330915

Nondestructive inline x-ray metrology with model-based library method

Described is a method and system for measuring parameters of a structure on a substrate, such as a via or a through-silicon via (tsv) using an imaging x-ray metrology system. A previously-trained support vector machine (svm) model is used to extract structure parameters from the acquired structure x-ray images. ... Tokyo Electron Limited

11/19/15 / #20150330631

Method for preventing explosion of exhaust gas in decompression processing apparatus

Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an mfc and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node n) of the dilution gas supply pipe, and a dilution controller configured to control the mfc.. ... Tokyo Electron Limited

11/19/15 / #20150329964

Film forming apparatus

There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.. . ... Tokyo Electron Limited

11/19/15 / #20150328668

Substrate liquid treatment apparatus, method of cleaning substrate liquid treatment apparatus and non-transitory storage medium

A substrate liquid treatment apparatus includes: at least one processing unit that processes a substrate with a treatment liquid; a storage tank that stores the treatment liquid; a circulation line through which the treatment liquid discharged from the storage tank into the circulation line is returned to the storage tank; a branch supply line that is branched from the circulation line to supply the treatment liquid to the processing unit; a recovery line that returns to the storage tank the treatment liquid having been supplied to the substrate in the processing unit; a distribution line connecting the circulation line and the recovery line; and a shutoff valve, provided on the distribution line, that is opened when cleaning of the recovery line is performed.. . ... Tokyo Electron Limited

11/19/15 / #20150328650

Method and apparatus for increased recirculation and filtration in a photoresist dispense system using a liquid empty reservoir

An apparatus for dispensing a liquid onto a substrate may comprise a reservoir for storing the liquid to be dispensed; a filter comprising an inlet and an outlet, the filter inlet in fluidic communication with the reservoir via a first valve; a dosing pump comprising an inlet, a first outlet, and a second outlet, the dosing pump inlet in fluidic communication with the reservoir and the dosing pump second outlet in fluidic communication with the filter inlet via a second valve, the dosing pump configured to dose an amount of the liquid and pump the liquid; and a dispense nozzle in fluidic communication with the dosing pump first outlet, the dispense nozzle configured to dispense the liquid onto the substrate.. . ... Tokyo Electron Limited

11/19/15 / #20150328649

Method and apparatus for multiple recirculation and filtration cycles per dispense in a photoresist dispense system

An apparatus for dispensing a liquid onto a substrate may comprise a reservoir for storing the liquid to be dispensed; a filter comprising an inlet and an outlet, the filter inlet in fluidic communication with the reservoir via a first valve; a dosing pump comprising an inlet, a first outlet, and a second outlet, the dosing pump inlet in fluidic communication with the reservoir and the dosing pump second outlet in fluidic communication with the filter inlet via a second valve, the dosing pump configured to dose an amount of the liquid and pump the liquid; and a dispense nozzle in fluidic communication with the dosing pump first outlet, the dispense nozzle configured to dispense the liquid onto the substrate.. . ... Tokyo Electron Limited

11/12/15 / #20150325458

Method and system to improve drying of flexible nano-structures

Disclosed herein are methods and systems for processing of nano-structures. In particular, disclosed herein are methods for processing nano-structures during semiconductor manufacturing, including nano-structures of drying high-aspect ratios. ... Tokyo Electron Limited

11/12/15 / #20150325448

Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element

A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step a). A resist layer is formed on the thus-formed fluorocarbon layer (step b). ... Tokyo Electron Limited

11/12/15 / #20150325432

Film forming method, film forming apparatus and recording medium

A film forming method in which in a state in which a target substrate is loaded on a loading table body of a loading table installed in a processing container and an interior of the processing container is evacuated, a film forming material gas is supplied into the processing container while heating the target substrate with a heater installed in the loading table body, to be thermally decomposed or reacted on a surface of the target substrate to form a predetermined film on the target substrate, includes introducing a heat transfer gas containing an h2 gas or an he gas into the processing container to transfer heat of the loading table body to a radially outer side of the loading table body, before the film forming material gas is supplied.. . ... Tokyo Electron Limited

11/12/15 / #20150325415

Etching method

Disclosed is an etching method for selectively etching an oxidation layer made of silicon from a processing target object having the oxidation layer within a processing chamber of a plasma processing apparatus. The etching method includes: forming an altered layer by generating plasma of a gas containing hydrogen, nitrogen, and fluorine to alter the oxidation layer; and after the forming the altered layer, irradiating secondary electrons to the processing target object to remove the altered layer within the processing chamber, in which a negative direct current voltage is applied on an upper electrode of the plasma processing apparatus so that positive ions generated from plasma collide against the upper electrode and thus the secondary electrons are emitted from the upper electrode.. ... Tokyo Electron Limited

11/12/15 / #20150324970

Film thickness measurement apparatus, film thickness measurement method, and non-transitory computer storage medium

Film thickness measured values obtained by measurement in advance at a plurality of points on a measurement preparation substrate and coordinates corresponding to the film thickness measured values are acquired. A pixel value at each coordinates is extracted from a preparation imaged image obtained by imaging the measurement preparation substrate in advance by an imaging device. ... Tokyo Electron Limited

11/12/15 / #20150323250

Substrate processing apparatus, deposit removing method of substrate processing apparatus and recording medium

A particle can be suppressed from being generated by removing a processing liquid or crystals caused by the processing liquid which adhere to a cover member. A substrate processing apparatus includes a substrate holding unit 3 configured to hold a substrate w; a processing liquid supply unit 7 configured to supply a processing liquid onto the substrate w held in the substrate holding unit 3; and a cover member 5 which has a ring shape and is disposed to face a peripheral portion of the substrate held in the substrate holding unit 3. ... Tokyo Electron Limited

11/12/15 / #20150322571

Substrate processing apparatus

A substrate processing apparatus for processing a substrate by using a plasma includes a processing chamber configured to airtightly accommodate a substrate, a lower electrode serving as a mounting table configured to mount thereon the substrate in the processing chamber, an upper electrode, serving as a shower plate having a plurality of gas supply openings, provided opposite to the substrate to be mounted on the mounting table, an insulating member disposed to surround an outer peripheral portion of the upper electrode, and a processing gas supply source configured to supply a processing gas into the processing chamber through the shower plate. The substrate processing apparatus further includes a heating unit provided at the insulating member to heat the insulating member.. ... Tokyo Electron Limited

11/12/15 / #20150322568

Method of depositing a film

A method of depositing a continuous tin film on a substrate is provided. In the method, a continuous tio2 film is deposited on a substrate, and then a continuous tin film is deposited on the continuous tio2 film. ... Tokyo Electron Limited

11/05/15 / #20150318220

Plasma processing apparatus and measurement method

There is provided a plasma processing apparatus, which includes: a processing chamber into which a target substrate is loaded and in which a dopant is implanted into the target substrate using a plasma of a gas which contains an element used as the dopant; a wall probe configured to measure a change in voltage corresponding to a density of charged particles in the plasma generated within the processing chamber; an oes (optical emission spectrometer) configured to measure a light emission intensity of the dopant existing in the plasma; and a calculation unit configured to calculate a dose amount of the dopant implanted into the target substrate, based on a measurement result obtained at the wall probe and a measurement result obtained at the oes.. . ... Tokyo Electron Limited

11/05/15 / #20150318197

Conveyance base and conveyance system

Provided is a conveyance system that adjusts the position of a conveyed substrate, prevents damage resulting from the heat of another apparatus in a conveyance base, prevents insufficient electrical power of another apparatus in the conveyance base, and can move the conveyance base smoothly. A substrate processing system is provided with a conveyance chamber and a sliding box moving within the conveyance chamber. ... Tokyo Electron Limited

11/05/15 / #20150318194

Substrate processing apparatus, substrate detection method of substrate processing apparatus and storage medium

A liquid processing apparatus includes a substrate holding and rotating unit provided with a rotating plate and a substrate support unit, and a liquid supply unit. The rotating plate is connected to a rotating shaft and a central portion of the rotating shaft is exposed to outside through an opening of the rotating plate. ... Tokyo Electron Limited

11/05/15 / #20150318193

Substrate liquid treatment apparatus and substrate liquid treatment method

A substrate liquid treatment apparatus comprises a chuck (13) that holds and rotates a wafer, a back surface purging nozzle (15) that discharges a purge gas toward the back surface of the wafer, and a periphery purging nozzle 16 that discharges the purge gas onto the back surface of the wafer. The back surface purging nozzle has a slit-like opening part extending from a central side to a peripheral side of the substrate in a plan view. ... Tokyo Electron Limited

11/05/15 / #20150318192

Substrate processing apparatus, substrate processing method, and recording medium

A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. ... Tokyo Electron Limited

11/05/15 / #20150316098

Bearing mechanism and transfer device

A bearing mechanism includes: a bearing that includes an inner and outer races, the outer race facing the inner race and a rolling element being interposed between the inner and outer races; a magnet that includes a first and second magnetic poles and extends between the first and second magnetic poles along an axial direction of the bearing, the first magnetic pole being in contact with an end surface of the outer race and the second magnetic pole opposing the first magnetic pole; a yoke that forms a magnetic circuit together with the bearing and the magnet, the yoke extending between the second magnetic pole and an end surface of the inner race so that the yoke is in contact with the second magnetic pole and faces the end surface of the inner race with a gap interposed therebetween; and a magnetic fluid held by the magnetic circuit.. . ... Tokyo Electron Limited

11/05/15 / #20150315705

Film forming method and film forming apparatus

A film forming method includes supplying a first source gas containing a first metal element onto a substrate, supplying a second source gas containing a second metal element onto the substrate, supplying a reaction gas converted into plasma and containing a nonmetal element reacting with the first metal element and the second metal element to generate a first reaction product and a second reaction product, respectively, to the substrate, to generate a third reaction product containing the first metal element, the second metal element and the nonmetal element. A mixing ratio of the first metal element contained in the third reaction product is higher than that of the second metal element, and a crystallization temperature of the second reaction product is higher than that of the first reaction product.. ... Tokyo Electron Limited

11/05/15 / #20150314339

Cleaning device, peeling system, cleaning method and computer-readable storage medium

A cleaning device peels off an overlapped substrate and cleans a bonding surface of a peeled substrate to be processed, the overlapped substrate including the substrate to be processed and a support substrate bonded together with a protectant, a peeling agent and an adhesive stacked in order therebetween from the substrate to be processed. The cleaning device includes: a support part that supports the substrate to be processed; a solvent supply part that supplies a solvent of the protectant to the bonding surface of the substrate to be processed supported by the support part; and a peeling agent absorption part that absorbs and removes the peeling agent which has been peeled from the bonding surface of the substrate to be processed.. ... Tokyo Electron Limited

11/05/15 / #20150314313

Dry non-plasma treatment system

A dry non-plasma treatment system for removing material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. ... Tokyo Electron Limited

10/29/15 / #20150311106

Electrostatic chuck, placing table and plasma processing apparatus

Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. ... Tokyo Electron Limited

10/29/15 / #20150311045

Dry cleaning method and plasma processing apparatus

A dry cleaning method is provided that is implemented by a plasma processing apparatus including a processing chamber having a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber. The dry cleaning method includes a first process step of supplying a first cleaning gas containing oxygen into the processing chamber, supplying a high frequency power or a microwave power into the processing chamber, and generating a plasma from the first cleaning gas; and a second process step of supplying a second cleaning gas containing bromine into the processing chamber after the first process step.. ... Tokyo Electron Limited

10/22/15 / #20150305097

Microwave heating apparatus and microwave heating method

A microwave heating apparatus includes: a processing chamber including a ceiling wall and a bottom wall and accommodating a target object; a microwave introducing unit to generate a microwave for heating the target object; a holding unit to hold the target object; and a control unit to control the microwave introducing unit to heat the target object. During heating the target object, the holding unit holds the target object at a position in which a distance h1 from the top surface of the bottom wall to the bottom surface of the target object satisfies a condition of h1<λ/2, and a distance h2 from the bottom surface of the ceiling wall to the top surface of the target object satisfies a condition of 3λ/4≦h2<λ, λ being a microwave wavelength.. ... Tokyo Electron Limited

10/22/15 / #20150303105

Method and apparatus for manufacturing semiconductor device

Disclosed is a method for manufacturing a semiconductor device. The method includes a template disposing step, a processing solution supply step, and a processing step. ... Tokyo Electron Limited

10/22/15 / #20150303092

De-chuck control method and control device for plasma processing apparatus

A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck, which includes a chuck electrode and electrostatically attracts the workpiece. The de-chuck control method includes acquiring a time-integration value of a current by measuring the current flowing from the chuck electrode for a predetermined time period after a plasma process is ended and a voltage applied to the chuck electrode is turned off; calculating a difference between the time-integration value of the current and an electric charge charged to the chuck electrode during the plasma process; calculating a counter voltage according to a residual charge of the electrostatic chuck based on the difference and a predetermined correlation between the time-integration value of the current and a torque acting on a support pin for supporting the workpiece; and applying the counter voltage to the chuck electrode while introducing gas into a processing chamber and generating plasma.. ... Tokyo Electron Limited

10/22/15 / #20150303083

Substrate processing device and substrate transfer method

Provided is a substrate processing device capable of improving throughput without increasing the operation speed of a drive device. Vacuum processing chambers which house a wafer for plasma processing of the wafer are respectively provided with gate valves for opening and closing a wafer inlet/outlet port, and wafer detection sensors for detecting the wafer moving forward or backward through the wafer inlet/outlet port, and a scara robot for making extending/retracting motion and rotating motion transfers the wafer. ... Tokyo Electron Limited

10/22/15 / #20150303077

Substrate processing apparatus

A substrate processing apparatus includes a housing, a mounting table provided in the housing and configured to mount a substrate thereon, a drive mechanism provided below the mounting table so as to move the mounting table in a front-back direction between a delivering/receiving location for the substrate and a processing chamber, an ultraviolet irradiation unit configured to irradiate the substrate in the processing chamber with ultraviolet rays, a partition member provided to partition the processing chamber and a drive chamber with the drive mechanism positioned therein up and down, the partition member having a slit for allowing movement of a support supporting the mounting table, first exhaust ports formed in the drive chamber to exhaust an atmosphere in the drive chamber, and second exhaust ports formed along a lengthwise direction of the slit so as to face the slit.. . ... Tokyo Electron Limited

10/22/15 / #20150303069

Plasma processing method and plasma processing apparatus

Plasma etching is performed while suppressing bowing during etching of a multi-layer film. The plasma etching is performed multiple times using a processing gas containing hbr gas and c4f8 gas, and the etching gradually forms recesses from a sin layer through a laminated film. ... Tokyo Electron Limited

10/22/15 / #20150300960

Substrate processing apparatus, method of operating substrate processing apparatus, and storage medium

A substrate processing apparatus includes: a load port into which the transport container is carried; a detecting unit that detects storage condition of the substrates which are contained in the transport container, which has been carried into the load port and the lid of which has been removed; a processing unit that processes the substrates removed from the transport container having been carried into the load port; and a control unit. The control unit performs a first step that detects storage condition of the substrates, which are contained in the transport container having been carried into the load port, before the substrates are removed from the transport container to be delivered to the processing unit; a second step that detects storage condition of the substrates, which have been processed in the processing unit and returned to the original transport container, before closing the lid; and a third step that judges whether or not the transport container has an abnormality based on results of the first and second steps.. ... Tokyo Electron Limited

10/22/15 / #20150300853

Solution processing apparatus, solution processing method, and non-transitory computer-readable recording medium

According to an embodiment of the present disclosure, an apparatus is configured to perform a solution process by supplying a processing solution from a processing solution supply source to the substrate held on a substrate holder via a flow path member and a nozzle at a flow rate equal to or less than 1 ml/sec. The apparatus includes a solution transfer unit configured to transfer the processing solution to the nozzle, and mounted to the flow path member, and an ultrasonic flowmeter mounted to the flow path member at a downstream side from the solution transfer unit. ... Tokyo Electron Limited

10/22/15 / #20150300227

Exhaust system

An exhaust system connected to an exhaust port of a substrate processing apparatus includes: a first exhaust trap having an exhaust input at an upper portion thereof and an exhaust output at a lower portion thereof and cooling a product produced in the substrate processing apparatus; a second exhaust trap installed at a downstream side of an exhaust flow with respect to the first exhaust trap, having an exhaust input at a lower portion thereof and an exhaust output at an upper portion thereof, and cooling the product; a storage unit installed between the first and second exhaust traps and storing the product cooled by the first and second exhaust traps; a first pipe connecting the exhaust port of the substrate processing apparatus and the first exhaust trap; and a second pipe connecting the first exhaust trap, the second exhaust trap and the storage unit.. . ... Tokyo Electron Limited

10/01/15 / #20150281654

Coating apparatus and coating method

Disclosed is a coating apparatus. A first imaging unit captures an image of the substrate disposed on the stage. ... Tokyo Electron Limited

10/01/15 / #20150279736

Tungsten film forming method

In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying wcl6 gas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the wcl6 gas with the reducing gas while heating the substrate. Then, an opening is formed in the tungsten filled in the recess by supplying wcl6 gas into the processing chamber and etching an upper portion of the tungsten. ... Tokyo Electron Limited

10/01/15 / #20150279735

Tungsten film forming method, semiconductor device manufacturing method, and storage medium

A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.. . ... Tokyo Electron Limited

10/01/15 / #20150279705

Microwave heating method and microwave heating apparatus

A microwave heating method includes: heating an object to be treated by irradiation of microwaves onto the object to be treated, the object to be treated having a film to be annealed and a substrate body on which the film to be annealed is formed; and stopping the irradiation of the microwaves, wherein the film to be annealed has a temperature rising rate by the irradiation of the microwaves higher than that of the substrate body. Switching from the heating the object to be treated to the stopping the irradiation of the microwaves is performed, after a temperature t1 of the film to be annealed reaches a temperature equal to or greater than a target temperature t of the film to be annealed by the irradiation of the microwaves, and before a temperature t2 of the substrate body reaches a steady state.. ... Tokyo Electron Limited

10/01/15 / #20150279702

Chemical supply system, substrate treatment apparatus incorporating the same, and coating and developing system incorporating the same apparatus

A chemical supply system comprises: a first container and a second container for storing a chemical solution; a first pump, located on a first pipe connecting the first and second containers, for directing the solution stored in the first container to the second container; and a first filter, located in the first pipe, for filtering the solution flowing through the first pipe from the first container toward the second container. The system further includes: a second pipe for connecting the first container and the second container; and a second pump, located on the second pipe, for directing the solution stored in the second container to the first container.. ... Tokyo Electron Limited

10/01/15 / #20150279691

Method of forming thin metal and semi-metal layers by thermal remote oxygen scavenging

Methods for forming thin metal and semi-metal layers by thermal remote oxygen scavenging are described. In one embodiment, the method includes forming an oxide layer containing a metal or a semi-metal on a substrate, where the semi-metal excludes silicon, forming a diffusion layer on the oxide layer, forming an oxygen scavenging layer on the diffusion layer, and performing an anneal that reduces the oxide layer to a corresponding metal or semi-metal layer by oxygen diffusion from the oxide layer to the oxygen scavenging layer.. ... Tokyo Electron Limited

10/01/15 / #20150279683

Method and apparatus for forming tisin film

Provided is a method of forming a tisin film on a surface of an object to be processed, the method including: repeating a first cycle a first predetermined number of times, the first cycle including supplying ti raw material gas containing ti raw material into a processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the ti raw material gas is supplied into the processing chamber; and repeating a second cycle a second predetermined number of times after repeating the first cycle the first predetermined number of times, the second cycle including supplying si raw material gas containing si raw material into the processing chamber, and supplying nitriding gas containing a nitridant into the processing chamber after the si raw material gas is supplied into the processing chamber, wherein the si raw material gas comprises an amine-based si raw material gas.. . ... Tokyo Electron Limited

10/01/15 / #20150279627

Film-forming apparatus

In a film-forming apparatus according to an aspect, a substrate placed on a substrate placing region passes through a first region and a second region in this order by rotation of a placing table. A precursor gas is supplied to the first region. ... Tokyo Electron Limited

10/01/15 / #20150276811

Probe card attaching method

A probe card attaching method makes it easy to attach/detach a probe card to/from a transfer stage. In a wafer inspection apparatus 10, a reference position is determined by moving a transfer stage 18 to align a stage-side camera 28 with a tester-side camera 16 in a tester 15, a first distance from the reference position to a center of a pogo frame 19 in the tester 15 is determined by checking a pin mark 24 in the tester 15 with the stage-side camera 28, a second distance from the reference position to a center of a probe card 20 is determined by checking a target mark 32 in the probe card 20 with the tester-side camera 16. ... Tokyo Electron Limited

10/01/15 / #20150276810

Substrate inspection apparatus

There is provided a substrate inspection apparatus in which a contact between a probe and a semiconductor device is checked without using an ic tester. Further, when an abnormal state is detected in the contact check, a cause of the abnormal state can be determined. ... Tokyo Electron Limited

10/01/15 / #20150275368

Film forming apparatus using gas nozzles

A film forming apparatus includes: first and second source gas nozzles installed so as to extend in an arrangement direction of the substrates, each of the source gas nozzles including a plurality of gas ejection holes formed to eject the source gas toward central regions of the substrates at height positions corresponding to gaps between the substrates; a reaction gas supply unit configured to supply the reaction gas into the reaction vessel; first and second source gas supply lines respectively connected to the first and second source gas nozzles; first and second tanks respectively installed on the first and source gas supply lines, and configured to accumulate the source gas in a pressurized state; valves respectively installed at upstream and downstream sides of the first tank and at upstream and downstream sides of the second tank; and an exhaust port configured to evacuate the interior of the reaction vessel.. . ... Tokyo Electron Limited

10/01/15 / #20150275367

Gas supply mechanism, gas supplying method, film forming apparatus and film forming method using the same

A gas supply mechanism of supplying a raw material gas obtained from a raw material of a solid state or a liquid state into a chamber configured to perform a film forming process on a workpiece is disclosed. The gas supply mechanism includes a gas supply controller configured to control a flow rate of a carrier gas by means of a flow rate controller, and to enable the carrier gas to flow while closing a material gas supply/shut-off valve to thereby increase internal pressures of a raw material container and a raw material gas supply pipe to be a high-pressure condition and then control the raw material gas supply/shut-off valve to be opened.. ... Tokyo Electron Limited

10/01/15 / #20150275366

Film forming apparatus, film forming method, and non-transitory computer-readable storage medium

An apparatus for forming a thin film on a substrate in a reaction container by alternately supplying a raw material gas and a reaction gas into the reaction container under a vacuum atmosphere is provided. The apparatus includes: a raw material gas supply unit installed in an end portion of a supply path of the raw material gas; a pressure adjusting valve installed in an vacuum exhaust path; a pressure regulating valve and an opening and closing valve which are respectively installed in a bypass path detouring the pressure adjusting valve; a tank installed in the middle of the supply path of the raw material gas; a flow rate adjusting valve installed in a downstream side of the tank; and a control unit configured to control the opening and closing valve to be opened when the raw material gas stored in the tank is supplied into the reaction container.. ... Tokyo Electron Limited

10/01/15 / #20150275360

Vacuum processing apparatus

Provided is a vacuum processing apparatus, which includes: a rotatable table installed in a vacuum vessel and configured to horizontally rotate around its center axis; a drive mechanism configured to rotate the rotatable table; a plurality of substrate holding units circumferentially arranged on the rotatable table and configured to obliquely hold a plurality of substrates with a front surface of each of the substrates oriented in a rotation direction of the rotatable table; a heating unit configured to heat the substrates held by the substrate holding units; a processing gas supply unit configured to supply a processing gas onto the substrates held by the substrate holding units; and a vacuum exhaust mechanism configured to vacuum-exhaust the interior of the vacuum vessel.. . ... Tokyo Electron Limited

10/01/15 / #20150275359

Substrate processing apparatus

The present disclosure provides a substrate processing apparatus for supplying a process gas to substrates to perform a process thereon. The apparatus comprises: an electrode installed to extend in a length direction of the substrate holding unit to activate the process gas by supplying power to the process gas; a structure installed in the reaction chamber to extend in the length direction of the substrate holding unit in a height region where the substrates are arranged; and an exhaust opening configured to vacuum exhaust an interior of the reaction chamber. ... Tokyo Electron Limited

10/01/15 / #20150275356

Cleaning method of apparatus for forming amorphous silicon film, and method and apparatus for forming amorphous silicon film

A method of cleaning an apparatus for forming an amorphous silicon film by removing an adhered material from an interior of the apparatus after the amorphous silicon film is formed on a workpiece through supply of a process gas into a reaction chamber of the apparatus includes: removing the adhered material from the interior of the apparatus by supplying the cleaning gas into the reaction chamber; and performing at least one purge process selected from a first purge process of supplying ammonia into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber, and a second purge process of supplying a gas containing hydrogen and oxygen into the reaction chamber, from which the adhered material has been removed by supplying the cleaning gas into the reaction chamber.. . ... Tokyo Electron Limited

10/01/15 / #20150273538

Substrate liquid processing apparatus and method, and computer-readable recording medium with substrate liquid processing program recorded therein

Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.. ... Tokyo Electron Limited

09/24/15 / #20150270183

Substrate processing method, program, control device, substrate processing apparatus, and substrate processing system

Disclosed is a substrate processing method. The substrate processing method includes: a first acquisition step of acquiring a first processing condition in a first processing performed using a first number of monitor substrates and a first processing result related to the monitor substrates; a second acquisition step of acquiring a second processing condition in a second processing performed using a second number of monitor substrates and a second processing result related to the monitor substrates; a first calculation step of calculating a processing condition difference between the first processing condition and the second processing condition; and a second calculation step of calculating a processing result of substrates at slot positions where no monitor substrate is placed in the first processing, based on the first processing result, the second processing result, the processing condition difference, and a process model representing a relationship between a processing condition and a processing result.. ... Tokyo Electron Limited

09/24/15 / #20150270166

Method of fabricating semiconductor device including a substrate having copper interconnects

A method of fabricating a semiconductor device including a substrate having a copper interconnect exposed on a surface of an insulation film, wherein a layer of an anti-corrosion agent composed of organic material is formed on the surface of the copper interconnect. The method includes removing the layer of the anti-corrosion agent by heating the substrate; and forming a thin layer including manganese oxide on the surface of the copper interconnect by supplying a gas containing an organic compound of manganese to the substrate.. ... Tokyo Electron Limited

09/24/15 / #20150270160

Method and apparatus for forming silicon oxide film

A method of forming a silicon oxide film for burying the silicon oxide film in a trench formed on a surface of a target object includes forming a silicon film on the trench of the target object, etching the silicon film, oxidizing the silicon film subjected to the etching to form a first silicon oxide film, and forming a second silicon oxide film on the first silicon oxide film to cover the first silicon oxide film formed through the oxidizing the silicon film while the second silicon oxide film is buried in the trench of the target object.. . ... Tokyo Electron Limited

09/24/15 / #20150270126

Thin film forming method

A thin film forming method which forms a seed film and an impurity-containing silicon film on a surface of an object to be processed in a processing container configured to be vacuum exhaustible, the thin film forming method includes: performing a first step which forms the seed film formed of a compound of silicon, carbon and nitrogen on the surface of the object by supplying a seed film raw material gas comprising an aminosilane-based gas into the processing container; and performing a second step which forms the impurity-containing silicon film in an amorphous state on the seed film by supplying a silane-based gas and an impurity-containing gas into the processing container.. . ... Tokyo Electron Limited

09/24/15 / #20150267298

Film forming apparatus

A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. ... Tokyo Electron Limited

09/24/15 / #20150267293

Operating method of vertical heat treatment apparatus, storage medium, and vertical heat treatment apparatus

An operating method of a vertical heat treatment apparatus which performs a film forming process by keeping the interior of a vertical reaction tube surrounded by a heating mechanism at a vacuum atmosphere and by supplying film forming gases to substrates accommodated within the reaction tube, includes: performing a film forming process with respect to the substrates by carrying a substrate holder holding a plurality of substrates in a shelf form into the reaction tube; carrying out the substrate holder from the reaction tube; and carrying a cooling jig into the reaction tube to cool an inner wall of the reaction tube so as to peel a thin film adhering to the inner wall of the reaction tube by a thermal stress and so as to collect the thin film in the cooling jig by thermophoresis.. . ... Tokyo Electron Limited

09/24/15 / #20150267292

Cleaning method of silicon oxide film forming apparatus, silicon oxide film forming method, and silicon oxide film forming apparatus

A cleaning method of a silicon oxide film forming apparatus for removing a deposit adhering to the inside of the silicon oxide film forming apparatus after a silicon oxide film is formed on a workpiece by supplying a process gas into a reaction chamber of the silicon oxide film forming apparatus. The cleaning method includes oxidizing the deposit adhering to the inside of the silicon oxide film forming apparatus by supplying an oxidizing gas into the reaction chamber, and cleaning the inside of the silicon oxide film forming apparatus by supplying a cleaning gas into the reaction chamber and removing the oxidized deposit.. ... Tokyo Electron Limited

09/17/15 / #20150263131

Method of forming self-aligned contacts using a replacement metal gate process in a semiconductor device

Techniques disclosed herein provide a gate pitch scaling solution for creating source/drain contacts in a replacement metal gate fabrication scheme. Such techniques provide a self-aligned contact process that protects gate electrodes from shorts due to etching from misaligned patterns. ... Tokyo Electron Limited

09/17/15 / #20150262872

Method of forming copper wiring

A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation layer of a substrate is disclosed. The method includes: forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned barrier film through reaction with the interlayer insulation layer; performing hydrogen radical treatment with respect to a surface of the manganese oxide film; placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment; forming a ruthenium film on the surface where the metal more active than ruthenium is present; and forming a copper film on the ruthenium film by physical vapor deposition (pvd) to bury the copper film in the recess portion.. ... Tokyo Electron Limited

09/17/15 / #20150262865

Method for removing back-filled pore-filling agent from a cured porous dielectric

A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. ... Tokyo Electron Limited

09/17/15 / #20150262794

Plasma processing method

The present disclosure provides a method of performing a plasma processing on a substrate by using a plasma processing apparatus including a processing container; an outer upper electrode provided to face a lower electrode; an inner upper electrode disposed inside the outer upper electrode; a first high-frequency power supply; a first power feeding unit; a second power feeding unit; and a variable condenser. The first and second power feeding units, a fixed condenser formed between the outer upper electrode and the inner upper electrode, and a closed circuit including the variable condenser become a resonance state when the variable condenser has a capacitance value in a predetermined resonance region. ... Tokyo Electron Limited

09/17/15 / #20150262793

Plasma processing apparatus

A resonance frequency can be adjusted by shifting the resonance frequency without reducing an impedance function or a withstanding voltage characteristic against a high frequency noise, when blocking, by using a multiple parallel resonance characteristic of a distributed constant line, the high frequency noise introduced into a power feed line from an electrical member other than a high frequency electrode within a processing vessel. Comb teeth m of a comb-teeth member 114 are inserted into winding gaps of air core coils 104(1) and 104(2). ... Tokyo Electron Limited

09/17/15 / #20150261212

Control apparatus, substrate processing apparatus, and substrate processing system

A control apparatus is configured to control an operation of a substrate processing apparatus configured to place at least a monitor substrate therein. The control apparatus controls the operation of the substrate processing apparatus based on a difference between a processing result of the monitor substrate processed by the substrate processing apparatus and a predictive result so as to optimize the monitor substrate loading frequency.. ... Tokyo Electron Limited

09/17/15 / #20150260788

Wafer mounting method and wafer inspection device

Provided is a wafer mounting method that can prevent the structure of a wafer inspection device from becoming complicated. In a wafer inspection device (10) provided with a plurality of testers (15) and a transport stage (18) for transporting a wafer (w), expandable bellows (23) are placed so as to surround a probe card (20) of a tester (15), the wafer (w) is placed on a chuck top (28), which is a thick plate, the chuck top (28) is supported by the transport stage (18), the transport stage (18) is moved toward the probe card (20) to butt the chuck top (28) against the bellows (23) after the transport stage (18) is positioned, together with the wafer (w) and the chuck top (28), opposite the probe card (20), and the transport stage (18) is moved, together with the wafer (w) and the chuck top (28), toward the probe card (20) even after the chuck top (28) is butted against the bellows (23), so that the wafer (w) is butted against the probe card (20).. ... Tokyo Electron Limited

09/17/15 / #20150259801

Method for forming carbon nanotubes and carbon nanotube film forming apparatus

A method for forming carbon nanotubes includes preparing a target object having a surface on which one or more openings are formed, each of the openings having a catalyst metal layer on a bottom thereof; performing an oxygen plasma process on the catalyst metal layers; and activating the surfaces of the catalyst metal layers by performing a hydrogen plasma process on the metal catalyst layers subjected to the oxygen plasma process. The method further includes filling carbon nanotubes in the openings on the target object by providing an electrode member having a plurality of through holes above the target object in a processing chamber, and then growing the carbon nanotubes by plasma cvd on the activated catalyst metal layer by diffusing active species in a plasma generated above the electrode member toward the target object through the through holes while applying a dc voltage to the electrode member.. ... Tokyo Electron Limited

09/17/15 / #20150259799

Vertical heat treatment apparatus, method of operating vertical heat treatment apparatus, and storage medium

A vertical heat treatment apparatus for performing a film forming treatment on a plurality of target substrates having a surface with convex and concave portions includes: a gas supply unit that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members made of quartz and installed to be positioned respectively above and below a region in which the plurality of target substrates held and supported by a substrate holding and supporting unit are disposed, wherein if s is a surface area per unit region of the gas distribution adjusting members and s0 is a surface area per unit region obtained by dividing a surface area of the target substrate by a surface area calculated based on an external dimension of the target substrate, a value obtained by dividing s by s0 (s/s0) is set to be 0.8 or more.. . ... Tokyo Electron Limited

09/17/15 / #20150259796

Film forming method, film forming apparatus and storage medium

A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.. . ... Tokyo Electron Limited

09/17/15 / #20150259792

Method of forming titanium carbonitride film and film formation apparatus therefor

A method of forming a titanium carbonitride film is provided. In one embodiment, the method of forming the titanium carbonitride film includes performing a cycle a plurality of times to form a titanium carbonitride film. ... Tokyo Electron Limited

09/17/15 / #20150258584

Separation and regeneration apparatus and substrate processing apparatus

Disclosed is a separation and regeneration apparatus which includes a buffer tank configured to generate a mixed liquid which includes a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to heat the mixed liquid up to a temperature between the first boiling point and the second boiling point so as to separate the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent in the gas state which is sent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent in the liquid state which is sent from the distillation tank.. . ... Tokyo Electron Limited

09/17/15 / #20150258570

Coating apparatus, coating method and storage medium

A coating apparatus includes: a rotation holding unit configured to hold and rotate a substrate; a coating liquid supply unit configured to supply a coating liquid onto a surface of the substrate; and a control unit configured to control the rotation holding unit and the coating liquid supply unit. The control unit performs: controlling the coating liquid supply unit to supply the coating liquid onto an encircling line surrounding a rotational center of the substrate while controlling the rotation holding unit to rotate the substrate; followed by controlling the coating liquid supply unit to supply the coating liquid onto a central area; and followed by controlling the rotation holding unit to rotate the substrate at an angular velocity greater than that when the coating liquid is supplied onto the encircling line.. ... Tokyo Electron Limited

09/17/15 / #20150258466

Separation and regeneration apparatus and substrate processing apparatus

Disclosed is a separation and regeneration apparatus including: a mixed drainage liquid tank (mixed liquid generating unit) configured to generate a mixed liquid which includes a low-specific-gravity liquid insoluble in a fluorine-containing organic solvent, a first fluorine-containing organic solvent having a first boiling point, and a second fluorine-containing organic solvent having a second boiling point higher than the first boiling point; a distillation tank configured to separate the first fluorine-containing organic solvent and the second fluorine-containing organic solvent in the mixed liquid into the first fluorine-containing organic solvent in a gas state and the second fluorine-containing organic solvent in a liquid state; a first tank configured to liquefy and store the first fluorine-containing organic solvent from the distillation tank; and a second tank configured to store the second fluorine-containing organic solvent from the distillation tank.. . ... Tokyo Electron Limited

09/17/15 / #20150258465

Separation and regeneration apparatus and substrate processing apparatus

Disclosed is a separation and regeneration apparatus including: a supercritical processing unit configured to generate a mixed gas including a first fluorine-containing organic solvent having a first boiling point and a second fluorine-containing organic solvent having a second boiling point lower than the first boiling point; and a distillation tank configured to store hot water having a temperature between the first boiling point and the second boiling point, in which the mixed gas is input into the hot water to be separated into the first fluorine-containing organic solvent in a liquid state and the second fluorine-containing organic solvent in a gas state, in which an introduction line configured to guide the mixed gas from the supercritical processing unit to the distillation tank is provided and a distal end of the introduction line is disposed in the hot water.. . ... Tokyo Electron Limited

09/10/15 / #20150255355

Substrate processing apparatus, substrate processing method and memory medium

A substrate processing system includes a film-forming device to form photosensitive film on substrate, an exposure device to expose the film on the substrate, a relay device to transfer the substrate between the film-forming and exposure devices, a warping data acquisition device to acquire measured warping data of the substrate, a communication device to perform data communication with the exposure device, and a control device including film-forming, relay, measuring, and communication control sub-devices. The film-forming sub-device controls the film-forming device to form the film on the substrate, the relay sub-device controls the relay device to transfer the substrate to the exposure device, the measuring sub-device controls the warping data acquisition device to acquire the data after the controlling by the film-forming sub-device prior to the controlling by the relay sub-device, and the communication sub-device controls the communication device to transmit the data to the exposure device.. ... Tokyo Electron Limited

09/10/15 / #20150255319

Conveying method and substrate processing apparatus

Provided is a method of conveying a storage container from a placing table to a conveyance place using a conveying mechanism in a substrate processing apparatus. The storage container hermetically stores a substrate and includes a flange portion formed on the top thereof. ... Tokyo Electron Limited

09/10/15 / #20150255316

Substrate cleaning method, substrate cleaning apparatus and vacuum processing system

In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.. ... Tokyo Electron Limited

09/10/15 / #20150255305

Plasma etching method and plasma etching apparatus

In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least cxfy gas and a rare gas having a mass smaller than a mass of ar gas into the processing chamber in the processing chamber by switching on a high frequency power application unit under a first condition and a process of extinguishing the plasma of the processing gas in the processing chamber by switching off the high frequency power application unit under a second condition are alternately repeated. A negative dc voltage from a dc power supply is applied such that an absolute value of the negative dc voltage of the second condition becomes greater than an absolute value of the negative dc voltage of the first condition.. ... Tokyo Electron Limited

09/10/15 / #20150255271

Substrate treatment method, computer storage medium, and substrate treatment system

The present invention is configured to: form, on a substrate, a neutral layer having an intermediate affinity to a hydrophilic polymer and a hydrophobic polymer; form a resist pattern by performing exposure processing on a resist film formed on the neutral layer and then developing the resist film after the exposure processing; perform a surface treatment on the resist pattern by supplying an organic solvent having a polarity to the resist pattern; apply the block copolymer onto the neutral layer; and phase-separate the block copolymer on the neutral layer into the hydrophilic polymer and the hydrophobic polymer.. . ... Tokyo Electron Limited

09/10/15 / #20150255267

Atomic layer deposition of aluminum-doped high-k films

Embodiments of the invention describe methods for forming a semiconductor device. According to one embodiment, the method includes depositing an aluminum-doped high-k film on a substrate by atomic layer deposition (ald) that includes: a) pulsing a metal-containing precursor gas into a process chamber containing the substrate, b) pulsing an aluminum-containing precursor gas into the process chamber, where a) and b) are sequentially performed without an intervening oxidation step, and c) pulsing an oxygen-containing gas into the process chamber. ... Tokyo Electron Limited

09/10/15 / #20150255258

Plasma processing apparatus and substrate processing apparatus provided with same

Provided is a plasma processing apparatus including: a rotary mounting table supported by a rotatory shaft arranged rotatably within a processing chamber and including multiple substrate placement units arranged side by side in a circumferential direction; a processing gas supplying section for supplying processing gas into the processing chamber; a plasma generating section wherein multiple microwave introducing mechanisms, each provided on the ceiling of the processing chamber so as to face the rotary mounting table and used for generating a plasma of the processing gas, are arranged in multiple rows spaced apart from each other from the inside of the movement path of the substrates when the rotary mounting table is rotated to the outside, each row of microwave introducing mechanisms being formed by arranging the microwave introducing mechanisms annularly side by side along the circumferential direction; and an exhaust unit that evacuates an inside of the processing chamber.. . ... Tokyo Electron Limited

09/10/15 / #20150255257

Substrate cooling member, substrate processing device, and substrate processing method

An objective of the present invention is to simplify a configuration of a processing chamber for cooling a substrate in a substrate processing device. In a plasma processing device (10) whereby a plasma process is carried out upon a wafer (w), the wafer (w) which is plasma processed is conveyed into a load-lock chamber (13), and gas is discharged from a gas discharge member (25) upon the surface of the wafer (w), cooling the wafer (w). ... Tokyo Electron Limited

09/10/15 / #20150255255

Plasma processing apparatus, plasma processing method and storage medium for storing program for executing the method

There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.. . ... Tokyo Electron Limited

09/10/15 / #20150253082

Vertical heat treatment apparatus

Disclosed is a vertical heat treatment apparatus. The apparatus includes: a heat treatment furnace provided with a furnace inlet at a lower end thereof; a cover unit disposed on the furnace inlet of the heat treatment furnace; a cover unit opening/closing mechanism configured to support the cover unit in a cantilever manner from a bottom side of the cover unit; and an auxiliary mechanism configured to press the cover unit from the bottom side of the cover unit when the cover unit is disposed on the furnace inlet. ... Tokyo Electron Limited

09/10/15 / #20150251913

Graphene machining method

A graphene machining method includes irradiating a gcb (gas cluster beam) onto graphene.. . ... Tokyo Electron Limited

09/10/15 / #20150251398

Bonding system and bonding method

Provided is a bonding system, which includes: a processing station in which specified processes are performed on a first substrate and a second substrate; and a carry-in/carry-out station in which the first substrate, the second substrate or a laminated substrate obtained by bonding the first substrate and the second substrate is carried into and out of the processing station. The processing station includes: a first processing apparatus configured to coat the first substrate with the bonding agent using a bonding agent injecting part; a second processing apparatus provided with a bevel cleaning unit for cleaning a bevel portion of the first substrate coated with the bonding agent; and a bonding apparatus configured to bond the first substrate and the second substrate through the bonding agent and a release agent. ... Tokyo Electron Limited

09/10/15 / #20150251211

Coating film forming apparatus, coating film forming method, and storage medium

A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.. . ... Tokyo Electron Limited

09/03/15 / #20150249017

Spacer material modification to improve k-value and etch properties

A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from a capping region of the gate structure and a substrate region on the substrate adjacent a base of the gate structure, while retaining a spacer sidewall positioned along a sidewall of the gate structure. ... Tokyo Electron Limited

09/03/15 / #20150249009

Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment

A method for forming a semiconductor device is provided in several embodiments. According to one embodiment, the method includes providing a substrate in a process chamber, flowing a process gas consisting of hydrogen (h2) and optionally a noble gas into the process chamber, forming plasma excited species from the process gas by a microwave plasma source. ... Tokyo Electron Limited

09/03/15 / #20150247242

Pre-treatment method of plating, storage medium, and plating system

A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.. ... Tokyo Electron Limited

09/03/15 / #20150247235

Method of cleaning plasma processing apparatus

There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. ... Tokyo Electron Limited

09/03/15 / #20150246329

Processing gas generating apparatus, processing gas generating method, substrate processing method, and storage medium

The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. ... Tokyo Electron Limited

09/03/15 / #20150246317

Method for producing filtration filter

Provided is a method for producing a filtration filter capable of purifying with high accuracy and largely improving filtration efficiency. A flow path forming film is formed on a substrate. ... Tokyo Electron Limited

08/27/15 / #20150245460

Plasma processing apparatus and method for processing object

A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. ... Tokyo Electron Limited

08/27/15 / #20150243556

Method of supplying cobalt to recess

A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film.. ... Tokyo Electron Limited

08/27/15 / #20150243554

Method for creating contacts in semiconductor substrates

Techniques include methods for creating contacts for microchips, solar films, etc., for electrically connecting conductive elements and/or for current spreading. Embodiments herein include using an oversized “board” or contact array positioned between a lower layer and an upper layer. ... Tokyo Electron Limited

08/27/15 / #20150243541

Electrostatic chuck, placing table, plasma processing apparatus, and method of manufacturing electrostatic chuck

Disclosed is an electrostatic chuck configured to hold a processing target object. The electrostatic chuck includes a dielectric substrate and a protective film. ... Tokyo Electron Limited

08/27/15 / #20150243540

Substrate processing apparatus and substrate processing method

Provided is a substrate processing apparatus including: a carry-in area where a placing table is provided to place thereon a carrying container including a take-out opening, a flange formed on an upper portion of a side formed with the take-out opening, and a recess formed on a top surface of the flange; a transfer area maintained under an atmosphere different from that of the carry-in area; a partition wall configured to partition the carry-in area and the transfer area and formed with an opening; a door configured to open/close the opening; a carrying container pressing unit configured to press the carrying container placed on the placing table against the partition wall so that the take-out opening of the carrying container faces the opening of the partition wall; and a carrying container holding unit configured to be inserted into the recess to press the carrying container against the partition wall.. . ... Tokyo Electron Limited

08/27/15 / #20150243524

Method of processing target object and plasma processing apparatus

A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. ... Tokyo Electron Limited

08/27/15 / #20150243522

Etching method

An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. ... Tokyo Electron Limited

08/27/15 / #20150243521

Plasma processing method and plasma processing apparatus

A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a cf-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the cf-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the cf-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.. ... Tokyo Electron Limited

08/27/15 / #20150243519

Method for patterning a substrate for planarization

Techniques disclosed herein include increasing pattern density for creating high-resolution contact openings, slots, trenches, and other features. A conformal spacer is applied on a bi-layer or tri-layer mandrel (multi-layer) or other relief feature. ... Tokyo Electron Limited

08/27/15 / #20150243518

Method for multiplying pattern density by crossing multiple patterned layers

Techniques disclosed herein include increasing pattern density for creating high-resolution contact openings, slots, trenches, and other features. A first line-generation sequence creates a first layer of parallel lines of alternating and differing material by using double-stacked mandrels, sidewall image transfer, and novel planarization schemes. ... Tokyo Electron Limited

08/27/15 / #20150243496

Method and apparatus of forming carbon-containing silicon film

A method of forming a carbon-containing silicon film includes: adsorbing a silicon source on a workpiece by supplying a silicon source gas containing at least one chlorine group into a reaction chamber accommodating the workpiece and activating the supplied silicon source gas to react the activated silicon source gas with the workpiece; and removing chlorine from the adsorbed silicon source containing chlorine by supplying an alkyl metal gas into the reaction chamber and activating the supplied alkyl metal gas to react the activated alkyl metal gas with the adsorbed silicon source. Adsorbing a silicon source and removing chlorine are sequentially repeated plural times.. ... Tokyo Electron Limited

08/27/15 / #20150243492

Apparatus and method of forming silicon nitride film

An apparatus of forming silicon nitride film includes: a reaction chamber accommodating a workpiece; a source gas supply unit supplying a source gas into the reaction chamber; a nitriding gas supply unit supplying a nitriding gas into the reaction chamber; a controller configured to form the silicon nitride film on the workpiece by controlling the source gas supply unit such that the silicon is adsorbed to the workpiece by supplying the source gas into the reaction chamber, and controlling the nitriding gas supply unit such that the silicon adsorbed to the workpiece is nitrided by supplying the nitriding gas into the reaction chamber; a flow path where the nitriding gas supplied into the reaction chamber flows until reaching the workpiece; and members arranged in the flow path. The members have a coating with platinum-group metals that activates the nitriding gas supplied from the nitriding gas supply unit.. ... Tokyo Electron Limited

08/27/15 / #20150243489

Cleaning method for plasma processing apparatus

A ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a low-k film etching process, immediately after a dry etching process (process s2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process s3). ... Tokyo Electron Limited

08/27/15 / #20150241793

Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (ps-car)

Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (ps-car) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. ... Tokyo Electron Limited

08/27/15 / #20150241787

Substrate processing method, program, computer-readable storage medium, and substrate processing system

Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. ... Tokyo Electron Limited

08/27/15 / #20150241783

Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes

The disclosure herein describes methods for photosensitized chemically amplified resist chemicals (ps-car) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. ... Tokyo Electron Limited

08/27/15 / #20150241781

Mitigation of euv shot noise replicating into acid shot noise in photo-sensitized chemically-amplified resist (ps-car)

A method for mitigating shot noise in extreme ultraviolet (euv) lithography and patterning of photo-sensitized chemically-amplified resist (ps-car) is described. The method includes a first euv patterned exposure to generate a photosensitizer and a second flood exposure at a wavelength different than the wavelength of the first euv patterned exposure, to generate acid in regions exposed during the first euv patterned exposure, wherein the photosensitizer acts to amplify acid generation and improve contrast. ... Tokyo Electron Limited

08/27/15 / #20150240357

Substrate processing apparatus using rotatable table

A substrate processing apparatus performing substrate processing by supplying a process gas to a circular substrate loaded on a rotatable table in a vacuum container while rotating the substrate, including: a recess formed at one side of the rotatable table to receive the substrate; a heater heating the rotatable table to heat the substrate to 600 degrees or more for processing; and six support pins disposed on a bottom surface of the recess such that the support pins are respectively placed at vertices of a regular hexagon, support the substrate at locations separated a distance of two-thirds (2/3) of a radius of the substrate from a center of the substrate, and support the substrate in a state of being raised from the bottom surface of the recess.. . ... Tokyo Electron Limited

08/27/15 / #20150240355

Vaporizer unit with open cell core and method of operating

A vaporizer for introducing a vapor-phase precursor into a substrate processing system, comprising: a vaporizer chamber having an vaporizer inlet, an vaporizer outlet, and a container wall extending between said vaporizer inlet and said vaporizer outlet and defining a vaporization volume there between, said container wall defining a lateral dimension of said vaporizer chamber; and at least one porous foam member arranged within said vaporizer chamber between said vaporizer inlet and said vaporizer outlet such that vapor flows through said at least one porous foam member, said at least one porous foam member in physical contact and thermal communication with said container wall, said at least one porous foam member having a thickness that is at least 10% said lateral dimension. The vaporizer chamber comprises an entrant chamber portion characterized by a diverging cross-sectional area with half angle of about 30-40 degrees and a vaporizer nozzle.. ... Tokyo Electron Limited

08/27/15 / #20150240344

Ruthenium film forming method, ruthenium film forming apparatus, and semiconductor device manufacturing method

A ruthenium film forming method includes: placing a target substrate in a processing container; supplying ruthenium carbonyl gas together with co gas as a carrier gas into the processing container, the ruthenium carbonyl gas being generated from solid-state ruthenium carbonyl; supplying additional co gas into the processing container; and forming a ruthenium film on the target substrate by decomposing the ruthenium carbonyl gas.. . ... Tokyo Electron Limited

08/27/15 / #20150240121

Method for improving chemical resistance of polymerized film, polymerized film forming method, film forming apparatus, and electronic product manufacturing method

A method for improving a chemical resistance of a polymerized film, which is formed on a surface of a target object and to be processed by a chemical, includes: consecutively performing a treatment for improving the chemical resistance of the polymerized film subsequent to formation of the polymerized film within a processing chamber of a film forming apparatus where the polymerized film is formed, without unloading the target object from the processing chamber.. . ... Tokyo Electron Limited

08/27/15 / #20150240120

Polymerized film forming method and film forming apparatus

A polymerized film forming method for forming a polymerized film on a target surface of a target object by using a first raw material gas containing acid dianhydride and a second raw material gas containing diamine, the method comprising performing a surface treatment on the target surface by supplying a gas containing an adhesion promoting agent for enhancing adhesion between the target surface and the polymerized film, and supplying the first raw material gas and the second raw material gas to the surface-treated target surface to form the polymerized film, wherein when performing the surface treatment, at least one of the first raw material gas and the second raw material gas is supplied in addition to the gas containing the adhesion promoting agent.. . ... Tokyo Electron Limited

08/27/15 / #20150239227

Delamination method, delamination device, and delamination system

A delamination method for delaminating a laminated substrate which includes a first and a second substrates bonded to each other, includes: adjusting a position of the laminated substrate at a holding unit by a position adjusting unit and disposing the holding unit at a predetermined height position; disposing a sharp member of a delamination inducing unit at a predetermined height position; detecting a contact of the sharp member by bringing the sharp member into contact with a side surface of one end portion of the laminated substrate; inserting the sharp member into the side surface of the one end portion of the laminated substrate; and delaminating the second substrate from the first substrate by a plurality of suction movement units which sucks the second substrate of the laminated substrate to move the second substrate away from the first substrate.. . ... Tokyo Electron Limited

08/20/15 / #20150235888

Substrate processing apparatus, method for correcting positional displacement, and storage medium

A substrate processing apparatus includes: first and second places in which a substrate can be placed; a substrate transfer device having a substrate holder that holds the substrate to transfer the substrate between the first and second places; and a substrate position measuring unit that detects a position of the substrate held by the substrate holder. The substrate position measuring unit, disposed independently of the substrate transfer device, is arranged at a position where the substrate held by the substrate holder of the substrate transfer device can be placed.. ... Tokyo Electron Limited

08/20/15 / #20150235886

Processing method and processing apparatus

A method of processing an object to by using a processing apparatus is provided. The apparatus includes a plurality of containers to contain the object, a plurality of process chambers to perform a desired process on the object, a temporary storage chamber to temporarily store the object, and a transfer device to transfer the object. ... Tokyo Electron Limited

08/20/15 / #20150235867

Semiconductor device manufacturing method

A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mw/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mtorr or above.. . ... Tokyo Electron Limited

08/20/15 / #20150235862

Semiconductor device manufacturing method

A semiconductor device manufacturing method for etching a multilayer film using a mask is provided. The method includes (a) supplying a first gas containing hydrogen, hydrogen bromide, nitrogen trifluoride and at least one of hydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the first gas to etch the multilayer film from a top surface of the multilayer film to a predetermined position in a stacked direction of the multilayer film; and (b) supplying a second gas that does not substantially contain hydrogen bromide and contains hydrogen and nitrogen trifluoride and at least one of thydrocarbon, fluorocarbon and fluorohydrocarbon into the processing chamber and exciting the second gas to etch the multilayer film from the predetermined position of the multilayer film to a top surface of the etching stop layer.. ... Tokyo Electron Limited

08/20/15 / #20150235861

Plasma etching method and plasma etching apparatus

A plasma etching method includes a first process and a second process. In the first process, a hole is formed in a processing target film formed on a substrate accommodated within a processing chamber by performing an etching process of etching the processing target film. ... Tokyo Electron Limited

08/20/15 / #20150235860

Etching method and plasma processing apparatus

An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed of silicon nitride includes: a process (a) and a process (b). In the process (a), a target object is exposed to plasma of a fluorocarbon gas and a thickness of a protective film on the second region is larger than a thickness of a protective film formed on the first region. ... Tokyo Electron Limited

08/20/15 / #20150235850

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

A semiconductor device manufacturing method of the present invention includes forming a base film having a water-repellent surface on a substrate; forming a photosensitive film having a water-repellent surface on the base film; developing the photosensitive film to expose the base film, thereby forming a photosensitive film pattern; supplying a first spacer material on the photosensitive film and on the exposed base film; and removing at least a part of the first spacer material formed on a top surface of the photosensitive film and a top surface of the base film.. . ... Tokyo Electron Limited

08/20/15 / #20150235846

Method and apparatus for forming silicon oxide film

A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by supplying a source gas containing chlorine and silicon into a reaction chamber accommodating the workpiece, activating the source gas, and reacting the activated source gas with the workpiece; and removing chlorine contained in the adsorbate by supplying hydrogen gas into the reaction chamber and activating the hydrogen gas, and reacting the activated hydrogen gas with the adsorbate, wherein removing the chlorine is performed after adsorbing the adsorbate is performed, thereby forming the amorphous silicon film on the workpiece; and forming a silicon oxide film on the workpiece by supplying an oxidizing gas into the reaction chamber and oxidizing the amorphous silicon film, wherein forming the amorphous silicon film and forming the silicon oxide film are repeated in this order plural times.. . ... Tokyo Electron Limited

08/20/15 / #20150235842

Transistor and method for manufacturing the same

A method for manufacturing a transistor includes irradiating an oxygen gas cluster ion beam onto a surface layer of a substrate which is made of silicon carbide and includes a channel area to become a channel to form a thin interface oxide film.. . ... Tokyo Electron Limited

08/20/15 / #20150235815

Substrate processing apparatus

An apparatus includes a row of substrate transfer devices 3 which can deliver a wafer w within a transfer chamber; and rows of process modules pm, arranged at right and left sides of the row of the substrate transfer devices along the row, configured to perform processes to the wafer w. The rows of the process modules pm are arranged such that each of the processes can be performed by at least two process modules pm. ... Tokyo Electron Limited

08/20/15 / #20150235813

Plasma processing device and operation method

An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.. . ... Tokyo Electron Limited

08/20/15 / #20150235809

Plasma processing apparatus and filter unit

Provided is a plasma processing apparatus in which an external circuit is electrically connected, via a line, to a predetermined electric member within a processing container thereof, and noises of first and second high frequency waves are attenuated or blocked by a filter provided on the line when the noises enter the line from the electric member toward the external circuit. The filter includes: an air core coil provided at a first stage when viewed from the electric member side; a toroidal coil connected in series with the air core coil; an electroconductive casing configured to accommodate or enclose the air core coil and the toroidal coil; a first condenser electrically connected between a connection point between the air core coil and the toroidal coil and the casing; and a second condenser connected between a terminal of the toroidal coil at the external circuit side and the casing.. ... Tokyo Electron Limited

08/20/15 / #20150234277

Liquid treatment method, substrate processing apparatus and non-transitory storage medium

In one embodiment, a liquid treatment method includes (a) imaging a discharging port part of the liquid nozzle each time the discharging process is performed to one substrate, and acquiring, from images thus obtained, size data on foreign matter possibly present at the discharging port part; and (b) based on a history of the size data arranged in chronological order, judging whether an abnormality in substrate-processing has occurred. In the item (b), if the number of continuous acquisition, indicating how many times the size data not smaller than a first threshold value has been acquired continuously, exceeds a predetermined value, then judging that an abnormality in substrate-processing has occurred.. ... Tokyo Electron Limited

08/20/15 / #20150232994

Plating apparatus, plating method and storage medium

A plating apparatus can perform a plating process on an entire surface of a substrate uniformly. A plating apparatus 20 includes a substrate holding/rotating device 110 configured to hold and rotate a substrate 2; a discharging device 21 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding/rotating device 110; and a controller 160 configured to control the substrate holding/rotating device 110 and the discharging device 21. ... Tokyo Electron Limited

08/20/15 / #20150232993

Substrate processing apparatus

A substrate processing apparatus of the present disclosure includes a placing table provided to be rotatable around an axis; a gas supplying section that supplies gas to regions through which a substrate sequentially passes while being moved in a circumferential direction with respect to the axis as the placing table is rotated; and a plasma generating section that generates plasma using the supplied gas. The plasma generating section includes an antenna that radiates microwaves, and a coaxial waveguide that supplies the microwaves to the antenna. ... Tokyo Electron Limited

08/20/15 / #20150232702

Polymerized film forming method and polymerized film forming apparatus

A polymerized film forming method for forming a polymerized film on a target surface of a workpiece using a first raw material gas which contains a first monomer and a second raw material gas which contains a second monomer differing from the first monomer includes: supplying the first raw material gas wherein difunctional non-aromatic amine having a hydrolyzable group is used for the first monomer; and supplying the second raw material gas wherein difunctional acid anhydride is used for the second monomer.. . ... Tokyo Electron Limited

08/13/15 / #20150228512

Substrate treatment method, computer-readable storage medium, and substrate treatment system

The present invention is a method of treating a substrate using a block copolymer containing a first polymer and a second polymer, the method including: a block copolymer coating step of applying the block copolymer onto a substrate or a base film applied on the substrate; and a polymer separation step of phase-separating the block copolymer into the first polymer and the second polymer by thermally treating the block copolymer on the substrate in a non-oxidizing gas atmosphere.. . ... Tokyo Electron Limited

08/13/15 / #20150228500

Semiconductor device manufacturing method

In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. ... Tokyo Electron Limited

08/13/15 / #20150228499

Etching method to form spacers having multiple film layers

Methods herein can be used for removing silicon nitride around fins and other structures without damaging underlying silicon structures. Methods herein also include forming dual layer spacers and l-shaped spacers, as well as other configurations. ... Tokyo Electron Limited

08/13/15 / #20150228478

Method of surface functionalization for high-k deposition

A method of surface functionalization for high-k deposition is provided in several embodiments. The method provides interface layer growth with low effective oxide thickness and good nucleation behavior for high-k deposition. ... Tokyo Electron Limited

08/13/15 / #20150228473

Method and apparatus for forming metal oxide film

A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.. . ... Tokyo Electron Limited

08/13/15 / #20150228462

Plasma processing apparatus

In a plasma processing apparatus, a partition wall connects a mounting table and a bottom wall of a processing chamber. A power feed member is disposed within the space surrounded by the partition wall and connected to the mounting table. ... Tokyo Electron Limited

08/13/15 / #20150228460

Gas supplying method and semiconductor manufacturing apparatus

A gas supplying method of supplying a process gas containing a gas of at least one gaseous species into a process space in a semiconductor manufacturing apparatus includes supplying the process gas by controlling a flow rate value of the gas to be a first value during a first period; supplying the process gas by controlling the flow rate value of the gas to be a second value smaller than the first value during a second period; supplying the process gas by controlling the flow rate value of the gas to be a third value greater than the first value during a third period; and supplying the process gas by controlling the flow rate value of the gas to be a fourth value smaller than the second value during a fourth period, wherein these steps are periodically repeated in a predetermined order.. . ... Tokyo Electron Limited

08/13/15 / #20150228459

Plasma processing method and plasma processing apparatus

In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. ... Tokyo Electron Limited

08/13/15 / #20150228458

Plasma processing method and plasma processing apparatus

A plasma processing method performs an etching process (s101) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (s102) of supplying an o2 gas into the plasma processing space and removing, with plasma of the o2 gas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. ... Tokyo Electron Limited

08/13/15 / #20150228457

Gas supply method and plasma processing apparatus

In the present invention, a gas supply method includes a selecting step and an additive gas supply step. The selecting step involves selecting, in accordance with the type of target film to be processed, a combination of a gas chamber into which additive gas is supplied and the type of additive gas, the gas chamber being selected from a plurality of gas chambers which are divided from a gas injection unit for injecting plasma processing gases into a processing chamber in which a substrate formed with a processing target film is placed. ... Tokyo Electron Limited

08/13/15 / #20150227139

Correction value computation device, correction value computation method, and computer program

A device for computing correction for control parameter in a manufacturing process executed on a manufacturing apparatus includes circuitry which acquires an index representing fluctuation in a manufacturing apparatus, acquires an apparatus model and a process model, acquires an output from a sensor in the manufacturing apparatus, transforms the output into first fluctuation for a process element, transforms the index into second fluctuation for the process element based on the apparatus model, computes fluctuation for performance indicator from the first and second fluctuation based on the process model, computes correction for the performance indicator from control range for the performance indicator and the fluctuation for the performance indicator, and converts the correction for the performance indicator into correction for each process element based on the process model such that correction for control parameter in process executed on the manufacturing apparatus is computed from the correction converted for each process element.. . ... Tokyo Electron Limited

08/13/15 / #20150227047

Semiconductor device manufacturing method and semiconductor device manufacturing apparatus

A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.. . ... Tokyo Electron Limited

08/13/15 / #20150226767

Prober

A prober can suppress a decrease of a throughput in inspection of semiconductor devices on a substrate. The prober 10 includes a stage 11 having a horizontal mounting surface 11a that mounts thereon a wafer w on which semiconductor devices are formed; a probe card 16 provided to face the stage 11; three roller devices 26, each having a vertical rotational shaft, equally-spaced along a circumference of the mounted wafer w. ... Tokyo Electron Limited

08/13/15 / #20150225849

Method for processing a substrate and substrate processing apparatus

A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. ... Tokyo Electron Limited

08/13/15 / #20150225686

Method for detaching cells from adhesion surface and cell detachment system

A method for detaching cells from a cell culture surface includes irradiating visible light in an irradiation amount of 4 j or greater per 1 mm2 to a cell adhesion surface to which cells are adhering on a substrate such that the cells are detached from the cell adhesion surface on the substrate.. . ... Tokyo Electron Limited

08/06/15 / #20150221550

Integration of ald barrier layer and cvd ru liner for void-free cu filling

Methods for integration of atomic layer deposition (ald) of barrier layers and chemical vapor deposition (cvd) of ru liners for cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ald in the recessed feature, where the barrier layer contains tan or taaln, depositing a conformal ru liner by cvd on the barrier layer, and filling the recessed feature with cu metal.. ... Tokyo Electron Limited

08/06/15 / #20150221537

Container interchanging method

A container interchanging method is provided. The container interchanging method provides that a first container accommodating a processed substrate therein and a second container accommodating an unprocessed substrate therein are interchanged in a container connection mechanism of a substrate transfer chamber. ... Tokyo Electron Limited

08/06/15 / #20150221530

Substrate liquid processing apparatus, substrate liquid processing method and computer readable recording medium having substrate liquid processing program recorded therein

Disclosed is a method for performing a liquid processing on a substrate using an aqueous solution of a chemical agent at a predetermined concentration as a processing liquid. The method includes: storing the processing liquid in a processing liquid storage unit; and supplying an aqueous solution of the chemical agent at a different concentration from the concentration of the processing liquid to the processing liquid storage unit, discharging the processing liquid from the processing liquid storage unit so as to update the processing liquid stored in the processing liquid storage unit. ... Tokyo Electron Limited

08/06/15 / #20150221529

Gas supply method and thermal treatment method

A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas.. . ... Tokyo Electron Limited

08/06/15 / #20150221522

Plasma processing method and plasma processing apparatus

A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process s101). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process s102). ... Tokyo Electron Limited

08/06/15 / #20150221512

Method of growing gallium nitride-based crystal and heat treatment apparatus

There is provided a method of growing a gallium nitride-based crystal, including: forming an interlayer including aluminum nitride or aluminum oxide on a silicon substrate at a film forming temperature of 350 to 700 degrees c.; heating the silicon substrate and the interlayer in an atmosphere containing ammonia or oxygen such that crystal nuclei of the aluminum nitride or the aluminum oxide included in the interlayer are distributed on the silicon substrate; and growing gallium nitride-based crystals on the silicon substrate from the crystal nuclei distributed on the silicon substrate.. . ... Tokyo Electron Limited

08/06/15 / #20150221482

Temperature measuring method and plasma processing system

A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (tmeas) according to a measurement window temperature (tw), the function (f) being computed based on the correction target temperature (tmeas) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (tobj) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (tw) corresponding to a temperature of the measurement window. ... Tokyo Electron Limited

08/06/15 / #20150221478

Capacitive coupling plasma processing apparatus

A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. ... Tokyo Electron Limited

08/06/15 / #20150220136

Substrate processing apparatus, editing apparatus and method and non-transitory storage medium

A control unit of a substrate processing apparatus has a storage medium that stores operation commands as a single macro. The operation commands include an operation command for shutdown of the substrate processing apparatus by which the substrate processing apparatus is automatically transferred from a normally-operating condition to a condition suitable for man power maintenance, and an operation command for startup of the substrate processing apparatus by which the substrate processing apparatus is automatically transferred to a condition suitable for normal operation after completion of the man power maintenance. ... Tokyo Electron Limited

08/06/15 / #20150219994

Coating and developing apparatus and method

In one embodiment, a coating and developing apparatus includes a processing block having two early-stage coating unit blocks, two later-stage coating unit blocks and two developing unit blocks, each unit blocks being vertically stacked on each other, the apparatus has at least two operation modes m1 and m2 adapted for abnormality. In mode m1 the processing module that processed the abnormal substrate in the developing unit blocks is identified, and subsequent substrates are transported to the processing module or modules, of the same type as the identified processing module, other than the identified processing module. ... Tokyo Electron Limited

08/06/15 / #20150219716

Method for pre-heating probe card

A wafer inspection apparatus includes a first and second wafer transfer mechanisms, an alignment chamber, a second wafer transfer mechanism and a plurality of inspection chambers. The first wafer transfer mechanism is installed at a first transfer area to transfer wafers individually from a housing. ... Tokyo Electron Limited

08/06/15 / #20150219687

Method of contacting substrate with probe card

A method of contacting a substrate with a probe card in a substrate inspection apparatus can inspect electrical characteristics of semiconductor devices on the substrate. A wafer w is transferred to a position facing a probe card 36 while being mounted on a chuck member 22 with a wafer plate 37 therebetween, and electrodes of semiconductor devices on the wafer w are contacted with probes of the probe card 36 by moving the wafer w and the wafer plate 37 toward the probe card 36 through an elevating device 43. ... Tokyo Electron Limited

08/06/15 / #20150219439

Method and apparatus for detecting position of substrate transfer device, and storage medium

In a method for detecting a position of a substrate transfer device including a substrate supporting unit, the light-transmitting optical sensor is moved with respect to a detection target provided at a predetermined relative position with respect to a position where a substrate is to be transferred by the substrate transfer device, and a vertical dimension of the detection target that blocks the optical axis is measured by setting the substrate supporting unit in a first orientation and relatively moving up or down the optical sensor with respect to the detection target. A vertical dimension of the detection target that blocks the optical axis is measured by setting the substrate supporting unit in a second orientation and relatively moving the optical sensor with respect to the detection target. ... Tokyo Electron Limited

08/06/15 / #20150218702

Electroless plating method, electroless plating apparatus and storage medium

A multiple number of accurately-patterned metal layers can be formed on a substrate. On a substrate 11, a patterned first metal layer 12 is formed (see fig. ... Tokyo Electron Limited

08/06/15 / #20150217294

Sealed container and cell transfer system

A sealed container device for hermetically accommodating cells includes a container body having an opening, a lid detachable from the opening of the container body, and a sealing structure positioned in gap formed between the container body and lid when the lid is inserted into the opening of the container body such that the sealing structure maintains sealed condition of the cells in the container body. The container body includes a step and a metal body positioned at the step such that the step is positioned to face peripheral edge of the lid on container-body side, and the lid includes a magnet positioned to face the metal body and a yoke structure movable relative to the magnet between a state where a magnetic circuit is formed between the magnet and the metal body and a state where the magnetic circuit is blocked.. ... Tokyo Electron Limited

07/30/15 / #20150214653

Feeder-cover structure and semiconductor production apparatus

A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.. ... Tokyo Electron Limited

07/30/15 / #20150214474

Etching method and substrate processing apparatus

An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. ... Tokyo Electron Limited

07/30/15 / #20150214473

Method and system for performing post-etch annealing of a workpiece

A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (cd), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. ... Tokyo Electron Limited

07/30/15 / #20150214088

Pickup method and pickup device

Disclosed is a pickup method in which a first suction unit is caused to approach and come into contact with a chip adhered to an adhesive sheet, and a second suction unit which is formed with a concavity on a contact surface configured to come into contact with the adhesive sheet is caused to approach and come into contact with the adhesive sheet in such a manner as to be opposite to the first suction unit. The adhesive sheet is sucked by the second suction unit that is in contact with the adhesive sheet, and a fluid is injected between the adhesive sheet and the chip by an injection unit. ... Tokyo Electron Limited

07/30/15 / #20150214081

Substrate heat treatment apparatus, method of installing substrate heat treatment apparatus

Disclosed is a substrate heat treatment apparatus. The apparatus includes: a conveyance storage unit which includes a first storage section and a second storage section each of which stores a plurality of conveyance containers, and a conveyance mechanism configured to convey the conveyance containers, each of the conveyance containers accommodating a plurality of wafers; and a heat treatment unit including a heat treatment furnace which accommodates a holder configured to hold the plurality of wafers in multiple stages, and performs the heat treatment on the wafers. ... Tokyo Electron Limited

07/30/15 / #20150214080

Substrate heat treatment apparatus, method of installing substrate heat treatment apparatus

Disclosed is a substrate heat treatment apparatus. The apparatus includes: a conveyance storage unit which includes a first storage section and a second storage section each of which stores a plurality of conveyance containers, and a conveyance mechanism configured to convey the conveyance containers, each of the conveyance containers accommodating a plurality of wafers; and a heat treatment unit including a heat treatment furnace which accommodates a holder configured to hold the plurality of wafers in multiple stages, and performs the heat treatment on the wafers. ... Tokyo Electron Limited

07/30/15 / #20150214070

Method for self-aligned double patterning without atomic layer deposition

A method for self-aligned double patterning without needing atomic layer deposition techniques is disclosed. Techniques include using a staircase etch technique to preferentially shrink one material without shrinking an underlying material, followed by a resist-based chemical polishing and planarization technique that yields a narrowed and protruding feature (single-layer thickness) that is sufficiently physically supported, and that can be transferred to one or more underlying layers. ... Tokyo Electron Limited

07/30/15 / #20150214046

Periphery coating apparatus, periphery coating method and storage medium therefor

There is provided a periphery coating method of coating a coating liquid on a periphery region of a substrate. The method includes performing a scan-in process of moving the coating liquid nozzle from an outside of an edge of the substrate to a position above the periphery region of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle; and performing a scan-out process of moving the coating liquid nozzle from the position above the periphery region of the substrate to the outside of the edge of the substrate while rotating the substrate and discharging the coating liquid from the coating liquid nozzle. ... Tokyo Electron Limited

07/30/15 / #20150214029

Method for processing a substrate and substrate processing apparatus

A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. ... Tokyo Electron Limited

07/30/15 / #20150214015

Film forming apparatus, method of forming low-permittivity film, sico film, and damascene interconnect structure

In a film forming apparatus according to an embodiment, a processing container defines a space including a plasma generation chamber and a processing chamber disposed under the plasma generation chamber. A first gas supply system supplies noble gas to the plasma generation chamber. ... Tokyo Electron Limited

07/30/15 / #20150214011

Plasma processing apparatus and high frequency generator

Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. ... Tokyo Electron Limited

07/30/15 / #20150212421

System and method for shifting critical dimensions of patterned films

Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. ... Tokyo Electron Limited

07/30/15 / #20150212127

Acquisition method for s-parameters in microwave introduction modules, and malfunction detection method

A plasma processing apparatus (1) includes a processing container (2) and a microwave introduction device (5) having a plurality of microwave introduction modules (61). A microwave is introduced for each of the plurality of microwave introduction modules (61), and s-parameters for each of combinations of the plurality of microwave introduction modules (61) are obtained based on the introduced microwave and a reflected microwave reflected from the processing container (2) into the plurality of microwave introduction modules (61).. ... Tokyo Electron Limited

07/30/15 / #20150211836

Systems and methods for generating backside substrate texture maps for determining adjustments for front side patterning

Techniques disclosed herein a method and system for generating texture maps for the backside of a substrate. The texture maps may be used to determine process adjustments (e.g., depth of focus) for subsequent processing of the front side of the substrate.. ... Tokyo Electron Limited

07/30/15 / #20150211796

Support mechanism and substrate processing apparatus

The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. ... Tokyo Electron Limited

07/30/15 / #20150211125

Plasma processing apparatus

Disclosed is provides a plasma processing apparatus that processes a workpiece. The plasma processing apparatus includes: a processing container configured to accommodate the workpiece; a coaxial waveguide configured to transmit microwaves generated in a microwave generator; and a slow wave plate configured to adjust a wavelength of the microwaves transmitted from the coaxial waveguide and to introduce the microwaves into the processing container. ... Tokyo Electron Limited

07/30/15 / #20150211124

Film forming apparatus

Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. ... Tokyo Electron Limited

07/30/15 / #20150211119

Film deposition apparatus

A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees c. ... Tokyo Electron Limited

07/30/15 / #20150211113

Vertical heat treatment apparatus, heat treatment method and storage medium

A vertical heat treatment apparatus is configured that a substrate supporter supporting a plurality of substrates in the configuration of a shelf thereon is loaded in a vertical reaction tube surrounded by a heating mechanism and a heat treatment is performed. The vertical heat treatment apparatus includes: a gas nozzle provided in the reaction tube to extend in a vertical direction of the substrate supporter and configured to discharge a processing gas; and a flow path forming member provided to surround the gas nozzle in the reaction tube, wherein the flow path forming member defines a fluid flowing space of a temperature adjusting fluid for adjusting a temperature of the processing gas in the gas nozzle and includes a supply hole and an exhaust hole to supply the temperature adjusting fluid.. ... Tokyo Electron Limited

07/30/15 / #20150210812

Defect-less directed self-assembly

Techniques herein enable executing directed self-assembly of block copolymer patterning processes that result in patterns having no defects or a negligibly low occurrence of defects to have a high yield of functional patterns and devices. Methods include executing a same dsa patterning sequence two or more times such that any defects in from a phase-separated first block copolymer film are corrected with a phase-separated second block copolymer film as any defect in the second block copolymer film would only temporarily cover a feature already created and/or transferred from first block copolymer film.. ... Tokyo Electron Limited

07/30/15 / #20150209818

Inline dispense capacitor

A fluid dispensing apparatus is disclosed. Systems include an in-line or linear bladder apparatus configured to expand to collect a charge of fluid, and contract to assist with fluid delivery and dispensing. ... Tokyo Electron Limited

07/30/15 / #20150209814

Processing liquid nozzle

Disclosed is a processing liquid nozzle that supplies a processing liquid to a substrate. The processing liquid nozzle includes: a hollow nozzle body; a processing liquid flow space formed inside the nozzle body; and a processing liquid flow path configured to connect a processing liquid ejection port formed in a lower portion of the nozzle body and the processing liquid flow space with each other. ... Tokyo Electron Limited

07/30/15 / #20150209707

Active filter technology for photoresist dispense system

Disclosed herein are systems and methods for filtering photoresist liquids that may be dispensed into a process chamber used to manufacture semiconductor devices. The system may include one or more active filter devices that distribute electrical or mechanical energy into a fluid conduit. ... Tokyo Electron Limited

07/23/15 / #20150206795

Amorphous silicon film formation method and amorphous silicon film formation apparatus

An amorphous silicon film formation method includes transferring a base in a process chamber, heating the base in the process chamber, setting a process pressure inside the process chamber, forming a seed layer on a surface of the base by flowing aminosilane-based gas in the process chamber under a process condition in which the aminosilane-based gas is not thermally decomposed and adsorbing the aminosilane-based gas onto the surface of the base, the process condition having a first temperature, and forming an amorphous silicon film on the seed layer by heating the base at a second temperature higher than the first temperature, flowing silane-based gas containing no amino group in the process chamber, and thermally decomposing the silane-based gas containing no amino group, wherein the forming of the seed layer and the forming of the amorphous silicon film are successively performed in the process chamber.. . ... Tokyo Electron Limited

07/23/15 / #20150206778

Microwave processing apparatus and microwave processing method

A microwave processing apparatus for processing a substrate by irradiating a microwave to the substrate includes: a processing container configured to accommodate a substrate; and a microwave introducing device configured to have a microwave source that generates a microwave and introduce the microwave into a microwave radiation space within the processing container. The microwave introducing device includes: a waveguide configured to form a transmission path to guide the microwave into the processing container; a first microwave transmission window interposed between the transmission path and the microwave radiation space; and a second microwave transmission window installed to be closer to the microwave source than the first microwave transmission window, and configured to change a traveling direction of the microwave.. ... Tokyo Electron Limited

07/23/15 / #20150206772

Substrate processing apparatus, method of operating the same and non-transitory storage medium

The substrate processing apparatus includes a plurality of processing units each capable of performing plural kinds of processes to a substrate under plural kinds of processing conditions, and a substrate transfer mechanism that transfers a substrate to each processing unit. In one embodiment, as an operation mode of each processing unit, a monitoring mode correlated with a processing liquid to be used can be set. ... Tokyo Electron Limited

07/23/15 / #20150206763

Etching method, etching apparatus, and ring member

Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. ... Tokyo Electron Limited

07/23/15 / #20150206722

Lower electrode and plasma processing apparatus

A lower electrode 2 includes a conductive base member 2a to which a high frequency power is applied; an electrostatic chuck 6, having an insulating layer 6b formed on a top surface of the base member 2a to cover an electrode 6a, configured to electrostatically attract a semiconductor wafer w as a target of a plasma process onto the insulating layer 6b; a focus ring 5 provided on a top surface of the insulating layer 6b of the electrostatic chuck 6 to surround the semiconductor wafer w; and a thermally sprayed film 100, which is conductive and formed on a portion of the insulating layer 6b of the electrostatic chuck 6 positioned between the focus ring 5 and the base member 2a by using a composite material in which titania is added to an insulating material for the insulating layer at a preset weight ratio.. . ... Tokyo Electron Limited

07/23/15 / #20150206715

Plasma etching method and plasma etching apparatus

A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a cf-based gas and a gas containing a chf-based gas by using the plasma-processed photoresist as a mask. ... Tokyo Electron Limited

07/23/15 / #20150206713

Plasma processing apparatus

Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. ... Tokyo Electron Limited

07/23/15 / #20150206712

Antenna and plasma processing apparatus

An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. ... Tokyo Electron Limited

07/23/15 / #20150204909

Prober and needle-tip polishing device for probe card

A prober 10 including a probe card 16 having multiple probe needles 17 includes a needle-tip polishing unit 24, and the needle-tip polishing unit 24 includes a wapp 28 to be contacted with needle tips and a supporting member 27 configured to support the wapp 28. On a top surface of the wapp 28, a wrapping sheet 29 is provided, and the wapp 28 includes multiple recesses 31 formed on a bottom surface 30 thereof and the supporting member 27 includes multiple protrusions 33 formed on a ceiling surface 32 thereof. ... Tokyo Electron Limited

07/23/15 / #20150203981

Component of substrate processing apparatus and method for forming a film thereon

A component of a substrate processing apparatus that performs plasma processing on a substrate includes a base mainly formed of an aluminum alloy containing silicon. A film is formed on the surface of the base by an anodic oxidation process which includes connecting the component to an anode of a power supply and immersing the component in a solution mainly formed of an organic acid. ... Tokyo Electron Limited

07/23/15 / #20150203965

Vacuum processing apparatus and vacuum processing method

A vacuum processing apparatus is configured to include a process chamber, a turntable provided in the process chamber, and a substrate receiving area provided in one surface of the turntable and including a regulation part formed therearound to regulate a position of a substrate. A transfer mechanism is provided outside the process chamber, and a lifting member is configured to support the substrate and to move up and down in order to transfer the substrate between the transfer mechanism and the turntable. ... Tokyo Electron Limited

07/16/15 / #20150201469

Heating apparatus

A heating apparatus includes a heat source; a holder having a contact portion configured to support an object to be processed; a rotation driving unit configured to rotate the holder; a luminous body including a fluorescent material or a phosphorescent material provided in the contact portion; and a fluorescent thermometer configured to measure a temperature of the object based on light from the luminous body. The fluorescent thermometer includes: a light source which is separated from the holder and configured to generate excitation light for exciting the luminous body; light receivers separated from the holder, each of the light receivers having a photodetector configured to receive the light from the luminous body; and a processing unit configured to calculate the temperature based on intensity of the light received by the photodetector of each of the light receivers.. ... Tokyo Electron Limited

07/16/15 / #20150201468

Heat treatment apparatus

A heat treatment apparatus configured to perform a heat treatment on a plurality of substrates, including: a processing vessel configured to accommodate the plurality of substrates on which the heat treatment is performed; an electromagnetic induction source configured to generate an oscillating magnetic field having a high frequency within the processing vessel; and a substrate holding element having a plurality of heating elements arranged in a vertical direction and spacers interposed between the adjacent heating elements, the heating element being made of a conductive material and allowing an induced current caused by the oscillating magnetic field to flow therein to generate heat, the substrate holding element supporting the substrates in a state where the substrates are mounted on the heating elements.. . ... Tokyo Electron Limited

07/16/15 / #20150201167

Fabrication equipment monitoring device and monitoring method

A fabrication equipment monitoring device which monitors, by a server and a portable terminal capable of communicating with the server, specifies the fabrication equipment toward which image capture element is faced, extracts the fabrication equipment information of the specified fabrication equipment from the storage unit based on the location information acquired by the location information acquisition unit, a direction information detected by the direction detection unit, an angle of view of the image capture element and the layout information when the image capture element is faced toward the fabrication equipment and displays at least a portion of the extracted fabrication equipment information on the display unit.. . ... Tokyo Electron Limited

07/16/15 / #20150200124

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device is provided by performing plasma processing on a substrate to be processed by using a plasma processing apparatus including a processing chamber, a lower electrode, an upper electrode, a plurality of lifter pins, a focus ring, a lifter pin for focus ring and an electrical connection mechanism.. . ... Tokyo Electron Limited

07/16/15 / #20150200080

Substrate processing apparatus

A substrate processing apparatus includes: a holding stage which includes a susceptor having a substrate holding surface on which a wafer is held and a focus ring holding surface on which a focus ring is held; an electrostatic chuck which electrostatically adsorbs a rear surface of the wafer to the substrate holding surface and electrostatically adsorbs a rear surface of the focus ring to the focus ring holding surface; and a heat transfer gas supplying mechanism, wherein the heat transfer gas supplying mechanism independently provides a first heat transfer gas supply unit supplying a first heat transfer gas to the rear surface of the substrate and a second heat transfer gas supply unit supplying a second heat transfer gas to the rear surface of the focus ring.. . ... Tokyo Electron Limited

07/16/15 / #20150197853

Substrate processing apparatus

Provided is a substrate processing including: a plasma generation source configured to generate the plasma within the processing container; a substrate holding mechanism configured to hold the substrate within the processing container; a separation plate disposed between the plasma generation source and the substrate holding mechanism and having a plurality of openings formed therein, in which the plurality of openings are configured to neutralize the plasma generated in the plasma generation source so as to form neutral particles, and to irradiate the neutral particles onto the substrate; and a directivity adjusting mechanism configured to adjust directivity of the neutral particles irradiated onto the substrate such that a plurality of peak values of an incident angle distribution of the neutral particles on the substrate are distributed at positions which are deviated from a normal direction of the substrate and located on both sides of the normal direction.. . ... Tokyo Electron Limited

07/09/15 / #20150194637

Method for forming silicon nitride film, and apparatus for forming silicon nitride film

Provided is a method for forming a silicon nitride film on a substrate accommodated in a processing container. The method includes: supplying a processing gas including a silane-based gas, nitrogen gas, and hydrogen gas or ammonia gas to the processing container; forming the silicon nitride film on the substrate by exciting the processing gas to generate plasma and performing a plasma processing by the plasma; and applying a bias electric field to a part of the silicon nitride film by intermittently performing an on/off control of a high frequency power source during or after the forming of the silicon nitride film.. ... Tokyo Electron Limited

07/09/15 / #20150194441

Method for manufacturing semiconductor device

Disclosed is method of manufacturing a semiconductor device. The method includes: forming an insulating film on one side of a substrate; forming a carbon film on the insulating film formed in the forming of the insulating film; forming an insulating film-carbon film laminate including a plurality of insulating films and carbon films alternately laminated on the one side of the substrate, by repeating the forming of the insulating film and the forming of the carbon film multiple times; removing the carbon films included in the insulating film-carbon film laminate; and forming electrode films in regions from which the carbon films are removed in the removing of the carbon films to obtain an insulating film-electrode film laminate in which the insulating films and the electrode films are laminated in a plurality of layers.. ... Tokyo Electron Limited

07/09/15 / #20150194330

De-chuck control method and plasma processing apparatus

A de-chuck control method is provided for de-chucking a workpiece from an electrostatic chuck that electrostatically attracts the workpiece. The de-chuck control method includes a discharge step of introducing an inert gas into a chamber after a plasma process and performing a discharge process; a high pressure step of introducing a gas having a lower ionization energy than helium gas after the discharge step, and maintaining a pressure within the chamber to a higher pressure than a pressure during the plasma process or a pressure during the discharge step; and a de-chuck step of de-chucking the workpiece from the electrostatic chuck with a support pin while the higher pressure is maintained by the high pressure step or after the higher pressure is maintained by the high pressure step.. ... Tokyo Electron Limited

07/09/15 / #20150194301

Substrate cleaning method, substrate cleaning apparatus, and computer-readable storage medium

A substrate cleaning method includes: a first step in which a cleaning liquid is ejected from a nozzle n2 to a central portion of a wafer w; a second step in which a dry gas is ejected from a nozzle n3 to the central portion of the wafer w to form a dry area; a third step in which the cleaning liquid is ejected from the nozzle n2 while the nozzle n2 is moved from a central side of the wafer w to a peripheral side thereof; a fourth step in which a width of an intermediate area generated between a wet area and the dry area is acquired; and a fifth step in which, when the width of the intermediate area exceeds a predetermined threshold value, a process parameter is changed such that the width of the intermediate area becomes the threshold value or less.. . ... Tokyo Electron Limited

07/09/15 / #20150194292

Plasma processing apparatus, abnormality determination method, and microwave generator

Disclosed is a plasma processing apparatus including a processing container, a plasma generation mechanism, a regulation unit, a detection unit, and a determination unit. The plasma generation mechanism includes a microwave oscillator, and generates plasma within the processing container using microwaves oscillated by the microwave oscillator. ... Tokyo Electron Limited

07/09/15 / #20150194290

Plasma processing apparatus

A plasma processing apparatus according to an exemplary embodiment includes a processing container that defines a processing space; an antenna provided above the processing space and including a disc-shaped wave guiding path around a predetermined axis and a metal plate defining the wave guiding path from a lower side; a microwave generator connected to the antenna and configured to generate microwaves; a stage provided in the processing container and facing the antenna across the processing space to intersect with the predetermined axis; and a heater configured to heat the metal plate. The metal plate includes a plurality of openings along a first circle around the predetermined axis and a second circle having a diameter larger than the first circle. ... Tokyo Electron Limited

07/09/15 / #20150192607

Substrate inspection apparatus and probe card transferring method

A wafer inspection apparatus 10 includes a middle plate 22 that mounts a probe card 18 in which multiple contact probes 20 are provided; a drawer type table 21 in which the middle plate 22 is provided; a tester 15 to which the probe card 18 is mounted; and a transfer robot 17 that transfers the middle plate 22. The middle plate 22 includes a base 23 and multiple supports 24 protruding toward the probe card 18 to be mounted. ... Tokyo Electron Limited

07/09/15 / #20150190838

Heat exchange system, and substrate processing apparatus having same

A heat exchange system 62 includes heat exchangers 69a and 69b that heat or cool a fluid passing therethrough; a fluid supply unit 81 that supplies the heating target fluid or the cooling target fluid into lower portions thereof; and a fluid discharge unit 82 that discharges the heated fluid or the cooled fluid from upper portions thereof. The fluid supply unit includes inlet lines 85 and 86 through which the fluid is introduced; a first manifold 87 located above the upper end portion of the heat exchangers and connected with the inlet lines; a gas exhaust line 88 that is connected to the first manifold and exhausts a gas mixed in the fluid; a supply line 89 that supplies the fluid from the first manifold. ... Tokyo Electron Limited

07/02/15 / #20150187643

Depression filling method and processing apparatus

A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.. . ... Tokyo Electron Limited

07/02/15 / #20150187621

Substrate processing apparatus

A throughput can be improved. A substrate processing apparatus includes processing units arranged in a vertical direction and configured to process substrates; and a substrate transfer device configured to be moved in the vertical direction and perform loading/unloading of the substrates into/from the processing units. ... Tokyo Electron Limited

07/02/15 / #20150187613

Substrate liquid processing apparatus

A substrate liquid processing apparatus of the present disclosure supplies a plurality of processing liquids from a processing liquid supplying unit in a switching manner to a substrate held on a substrate holding unit. An elevatable inner cup surrounds the substrate holding unit laterally and forms a first drain path that drains the first processing liquid. ... Tokyo Electron Limited

07/02/15 / #20150187593

Etching method, storage medium and etching apparatus

There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.. . ... Tokyo Electron Limited

07/02/15 / #20150187588

Plasma etching method and semiconductor device manufacturing method

A plasma etching method for etching a substrate includes an adjustment step adjusting a concentration distribution of active species contained in plasma. The adjustment step adjusts a supply rate of an etching gas according to whether a supply region on a substrate to which the etching gas is supplied corresponds to a region where an effect of diffusion of the supplied etching gas is greater than an effect of flow of the supplied etching gas or a region where the effect of flow of the supplied etching gas is greater than the effect of diffusion of the supplied etching gas.. ... Tokyo Electron Limited

07/02/15 / #20150187582

Doping method, doping apparatus and method of manufacturing semiconductor device

Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. ... Tokyo Electron Limited

07/02/15 / #20150187549

Magnetron sputtering apparatus

To provide technology that can increase the productivity of an apparatus when magnetron sputtering is carried out using a target formed from magnetic material. The present disclosure is an apparatus provided with: a cylindrical body that is a target formed from magnetic material, disposed above a substrate; a rotating mechanism that rotates this cylindrical body around the axis of the cylindrical body; a magnet array provided inside a hollow part of the cylindrical body; and a power supply that applies voltage to the cylindrical body. ... Tokyo Electron Limited

07/02/15 / #20150187546

Vacuum-processing apparatus, vacuum-processing method, and storage medium

The present disclosure provides a vacuum-processing apparatus for forming a metal film on a substrate by sputtering targets with ions of plasma, and then oxidizing the metal film, the apparatus including: a first target composed of a material having a property of adsorbing oxygen; a second target composed of a metal; a power supply unit configured to apply a voltage to the targets; a shutter configured to prevent particles generated from one of the targets from adhering to the other of the targets; a shielding member; an oxygen supply unit configured to supply an oxygen-containing gas to the substrate mounted on the mounting unit; and a control unit configured to perform supplying a plasma-generating voltage to the targets and sputtering the targets and supplying the oxygen-containing gas from the oxygen supply unit to the substrate.. . ... Tokyo Electron Limited

07/02/15 / #20150187542

Substrate processing apparatus, shutter device and plasma processing apparatus

Abnormal discharge is suppressed from occurring within a chamber. A plasma processing apparatus 1 includes a cylindrical chamber 10 having an opening 51 through which a processing target substrate is loaded into the chamber; a deposition shield 71 which is provided along an inner wall of the chamber 10 and has an opening 71a at a position corresponding to the opening 51; and a shutter 55, having a plate shape, configured to open and close the opening 71a. ... Tokyo Electron Limited

07/02/15 / #20150185092

Heat-flux measuring method, substrate processing system, and heat-flux measuring member

In a heat-flux measuring method for measuring an ion flux of plasma generated in a substrate processing chamber using a heat flux, a heat-flux measuring member is exposed to the plasma and irradiatated with a low coherent light. The heat-flux measuring member has a three-layered structure in which a first length and a second length of optical paths of the low-coherent light in the first layer and the third layer are measured using optical interference of reflected lights from the heat-flux measuring member. ... Tokyo Electron Limited

07/02/15 / #20150184294

Film deposition apparatus, film deposition method, and computer-readable storage medium

A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.. ... Tokyo Electron Limited

07/02/15 / #20150184293

Film formation method and apparatus for semiconductor process

A film formation method performs a supply cycle of sequentially supplying two kinds of reactive gases inside a vacuum container to form a thin film on the substrate. The method includes placing the substrate, including a depressed portion formed thereon, on a table, then adjusting a temperature of the substrate to a temperature at which a first reactive gas is adsorbed and condensed, then supplying the first reactive gas and thereby depositing a condensed substance of the first reactive gas on the substrate, then rotating the table, then partly vaporizing the condensed substance by supplying a heated gas to the substrate; and then supplying a second reactive gas in an activated state to the substrate and thereby causing the second reactive gas to react with the condensed substance.. ... Tokyo Electron Limited

06/25/15 / #20150179518

Method of forming contact layer

A method of forming a contact layer on a substrate having a contact hole to make a contact between the substrate and a buried metal material, includes disposing the substrate in a chamber, introducing a ti source gas, a reducing gas and an si source gas into the chamber, and converting the ti source gas, the reducing gas and the si source gas into plasma to form a tisix film on the substrate. A portion of the tisix film in a bottom of the contact hole corresponds to the contact layer.. ... Tokyo Electron Limited

06/25/15 / #20150179485

Stage, stage manufacturing method, and heat exchanger

A stage includes a plate and a heat exchanger. The plate has a front surface, on which a substrate is mounted, and a rear surface. ... Tokyo Electron Limited

06/25/15 / #20150179466

Method of manufacturing semiconductor device

Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including o2 gas or n2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including hbr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.. ... Tokyo Electron Limited

06/25/15 / #20150179462

Method of forming ti film

A method of forming a ti film on a substrate disposed in a chamber by introducing a processing gas containing a ticl4 gas as a ti source and a h2 gas as a reducing gas and by generating plasma in the chamber, includes introducing an ar gas as a plasma generation gas into the chamber, converting the ar gas into plasma to generate ar ions, and acting the ar ions on the ti film to promote desorption of cl from the ti film.. . ... Tokyo Electron Limited

06/25/15 / #20150179451

Method for processing graphene, method for producing graphene nanoribbons, and graphene nanoribbons

A gas comprising h2o molecules is introduced into a cluster-generating unit through a nozzle of a gas cluster ion beam device. The introduced water vapor is aggregated by cooling by adiabatic expansion, and beam-shaped h2o clusters are formed. ... Tokyo Electron Limited

06/25/15 / #20150179415

Substrate processing apparatus

A substrate processing apparatus includes a chamber including a process chamber for performing a process on a substrate by a gas introduced thereto and an exhaust chamber for evacuating the gas in the process chamber, a shield member for separating the process chamber from the exhaust chamber provided in at least a part of a neighborhood of a side wall of the chamber, and a hollow relay member penetrating through the shield member for communicating the chamber with a pipe connected to a pressure gauge outside the chamber. The relay member is configured to receive a first gas flowing from the chamber into the relay member. ... Tokyo Electron Limited

06/25/15 / #20150179408

Substrate processing apparatus and substrate processing method

A substrate processing apparatus and a substrate processing method can perform a plasma process using a microwave and a heat treatment through irradiation of the microwave on a substrate. A substrate processing apparatus 1 includes a processing vessel 2; a microwave introduction device 3 configured to introduce a microwave into the processing vessel 2; a mounting table 4 configured to support a wafer w thereon within the processing vessel 2. ... Tokyo Electron Limited

06/25/15 / #20150179407

Plasma processing apparatus and plasma processing method

Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a vf power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the vf power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the vf power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.. ... Tokyo Electron Limited

06/25/15 / #20150179405

Upper electrode and plasma processing apparatus

In an exemplary embodiment, an upper electrode is disposed in a processing chamber to face a susceptor and provided with a plate-like member and an electrode part. In an exemplary embodiment, the plate-like member is formed with a gas distribution hole that distributes a processing gas used for a plasma processing. ... Tokyo Electron Limited

06/25/15 / #20150177317

Device of contacting substrate with probe card and substrate inspection apparatus having same

A device of contacting a substrate with a probe card includes a mounting table 15 that transfers a wafer w together with a wafer plate 24 to a position facing the probe card 19; a lifting device 15a that contacts multiple electrodes of semiconductor devices formed on the wafer w with multiple probes of the probe card 19 by moving the wafer plate 24 and the wafer w toward the probe card 19 and then further moves the wafer w toward the probe card 19; a depressurization path 26 that decompresses a space s between the probe card 19 and the wafer plate 24 and maintains a contact state between the electrodes of the semiconductor devices and probes 19b of the probe card 19; and the lifting device 15a that separates a chuck member 14 on the mounting table 15 from the wafer plate 24.. . ... Tokyo Electron Limited

06/25/15 / #20150176974

Apparatus and method for measuring thickness and temperature and substrate processing system

An apparatus for measuring a thickness or wear amount and a temperature of the ceramic member by using a terahertz wave includes a terahertz wave generating unit configured to output a terahertz wave, a terahertz wave analysis unit configured to analyze a terahertz wave and an optical system configured to guide the terahertz wave output from the terahertz wave generating unit to the ceramic member and guide reflected waves of the terahertz wave reflected from the ceramic member to the terahertz wave analysis unit. The terahertz wave analysis unit obtains an optical path difference between a first reflection wave reflected from a front surface of the ceramic member and a second reflection wave reflected from a rear surface of the ceramic member and measures a thickness of the ceramic member based on the optical path difference.. ... Tokyo Electron Limited

06/25/15 / #20150176928

Method of supplying temperature control fluid to temperature control system and storage medium

A temperature control system 1 includes a joint path 71 that supplies a fluid from a low-temperature path 76 having a variable valve 79a and a high-temperature path 77 having a variable valve 79c to a temperature regulation member 70; a bypass path 73 that has a variable valve 79b and circulates the fluid flowing a collection path 72 that collects the supplied fluid through the temperature regulation member; a circulation pump 87 at the collection path; and a tank 78 that is provided at an upstream side of the circulation pump and supplies the fluid to the circulation pump when an amount of the fluid reaches a preset amount. The variable valves 79a and 79b are opened to supply the fluid, and the valves 79b and 79c are opened to supply the fluid after detecting that the amount of the fluid in the tank 78 reaches the preset amount.. ... Tokyo Electron Limited

06/25/15 / #20150176139

Coating film removing apparatus

A coating film removing apparatus includes: a substrate holding mechanism that holds a substrate; an end surface detection mechanism that detects an end surface of the substrate; an end portion removing mechanism that removes an end portion of the coating film applied on the substrate; and a moving mechanism that moves the substrate holding mechanism or the end portion removing mechanism, wherein the end portion removing mechanism removes the end portion of the coating film applied on the substrate while the moving mechanism is relatively moving the substrate holding mechanism and the end portion removing mechanism according to the end surface of the substrate detected by the end surface detection mechanism.. . ... Tokyo Electron Limited

06/25/15 / #20150176125

Substrate processing apparatus

Disclosed is a substrate processing apparatus for processing a processing target object by a processing gas. The substrate processing apparatus includes: a processing container configured to accommodate the processing target object; a mounting unit provided within the processing container to place the processing target object thereon; a processing gas supply unit provided in a side wall of the processing container to supply the processing gas into the processing container; and a processing gas diffusion mechanism provided outside the processing gas supply unit. ... Tokyo Electron Limited

06/18/15 / #20150170963

Semiconductor device manufacturing method

A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a cu film in the recess to form a cu wiring.. ... Tokyo Electron Limited

06/18/15 / #20150170933

Etching processing method

An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a dc power supply for supplying a dc power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. ... Tokyo Electron Limited

06/18/15 / #20150170932

Etching method

Provided is an etching method for forming a space with an aspect ratio of 50 or more in a workpiece including a silicon oxide film and a hard mask. The etching method includes: a first step of exposing the workpiece to plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode; and a second step of further exposing the workpiece to the plasma of a fluorocarbon-based gas within a processing container of a capacitively coupled plasma processing apparatus which includes a placing table serving as a lower electrode and an upper electrode. ... Tokyo Electron Limited

06/18/15 / #20150170931

Gas treatment method

A gas processing method is described. A workpiece is mounted on a platform in a chamber on which a silicon oxide film is formed on a surface of the workpiece; hf gas and a nh3 gas, as reaction gases, are discharged onto the workpiece on the platform from a plurality of gas discharge holes of a shower plate; and a treatment for causing a reaction between the reaction gases and the silicon oxide film on the surface of the workpiece is performed. ... Tokyo Electron Limited

06/18/15 / #20150170925

System and method for controlling plasma density

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. ... Tokyo Electron Limited

06/18/15 / #20150170903

System and methods for spin-on coating of self-assembled monolayers or periodic organosilicates on a substrate

This disclosure relates to a processing system for spin-coating a substrate with molecular self-assembly (msa) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat msa chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. ... Tokyo Electron Limited

06/18/15 / #20150170891

Particle backflow preventing part and substrate processing apparatus

A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.. ... Tokyo Electron Limited

06/18/15 / #20150170882

Plasma processing apparatus and plasma processing method

Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a vf power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the vf power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the vf power supply, passes through the susceptor, the focus ring and the plasma. ... Tokyo Electron Limited

06/18/15 / #20150170881

Microwave plasma source and plasma processing apparatus

A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. ... Tokyo Electron Limited

06/18/15 / #20150168449

Wafer inspection interface and wafer inspection apparatus

A wafer inspection interface 40 includes a probe card 43 including probes 43b provided on a surface facing a wafer w; a pogo frame 42 that supports a surface of the probe card 43 opposite to the surface on which the probes 43b are provided; a table-shaped chuck member 45 facing the probe card 43 with the wafer w therebetween; a cylindrical bellows 46, configured to seal a space between the chuck member 45 and the pogo frame 42, having one end fastened to the pogo frame 42 and a lower flange 46b at the other end to be contacted with the chuck member 45; a length adjusting device that adjusts a length of the bellows 46; a guide member 47 that guides a movement of the bellows 46; and a decompression path 51 that decompresses the space between the chuck member 45 and the pogo frame 42.. . ... Tokyo Electron Limited

06/18/15 / #20150168363

Substrate processing apparatus and method for detecting an abnormality of an ozone gas concentration

A substrate processing apparatus is provided that includes an ozonizer for generating ozone gas and an ozone sensor for detecting an ozone gas concentration. The substrate processing apparatus processes a substrate by using the ozone gas supplied from the ozonizer. ... Tokyo Electron Limited

06/18/15 / #20150168231

Temperature measuring method, substrate processing system and component to be provided in substrate processing apparatus of the substrate processing system

A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.. ... Tokyo Electron Limited

06/18/15 / #20150168130

Wear amount measuring apparatus and method, temperature measuring apparatus and method and substrate processing system

A wear amount measuring apparatus includes a light source, a light transmission unit, a first and a second irradiation unit, a spectroscope and an analysis unit. The light transmission unit splits a low-coherence light from the light source into a first and a second low-coherence light. ... Tokyo Electron Limited

06/18/15 / #20150167174

Plating apparatus, plating method, and storage medium

A plating method can improve uniformity in thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. ... Tokyo Electron Limited

06/18/15 / #20150167171

Processing apparatus and active species generating method

A processing apparatus includes: a first active species generation unit including a first generation chamber where first active species are generated from a first gas by using silent discharge; a second active species generation unit including a second generation chamber where second active species are generated from a second gas by using at least one of inductively coupled plasma, capacitively coupled plasma and microwave plasma, the second active species generation unit being located downstream from the first active species generation unit and the first active species being supplied from the first generation chamber to the second generation chamber; and a processing chamber where a process is performed on an object to be processed by using the first and second active species supplied from the second generation chamber, the processing chamber being located downstream from the second active species generation unit.. . ... Tokyo Electron Limited

06/18/15 / #20150167163

Method of forming a pattern and substrate processing system

A method of forming a pattern is provided. The method includes an etching step of forming a predetermined pattern in a silicon-containing film by etching the silicon-containing film deposited on a substrate through a mask by plasma generated from an etching gas containing a fluorocarbon gas, and a film deposition step of depositing a silicon oxide film or a silicon nitride film on a surface of the predetermined pattern by oxidizing or nitriding a silicon-containing layer adsorbed on the surface of the predetermined pattern by supplying a silicon compound gas, by using plasma generated from an oxidation gas or a nitriding gas.. ... Tokyo Electron Limited

06/18/15 / #20150165471

Substrate processing apparatus, substrate processing method, and computer-readable storage medium storing substrate processing program

A substrate processing apparatus includes one or more substrate processing units 11 to 18 each processing a substrate 3 with a processing fluid; processing fluid supply units 19 and 20 supplying the heated processing fluid to the substrate processing units 11 to 18; and a controller 21 controlling the processing fluid supply units 19 and 20. The processing fluid supply units 19 and 20 include a storage tank 35 storing the processing fluid; a heating heat exchanger 51 heating the processing fluid; and a supply path 52 supplying the processing fluid to the substrate processing units 11 to 18. ... Tokyo Electron Limited

06/18/15 / #20150165458

Liquid supplying apparatus

An embodiment of a liquid supplying apparatus for supplying a processing liquid to a process object includes: a processing liquid cartridge including: a reservoir chamber for storing the processing liquid; an ejecting port for ejecting the processing liquid stored in the reservoir chamber; a pusher unit for pushing the processing liquid stored in the reservoir chamber outward through the ejecting port; and a replenishing port for replenishing the processing liquid into the reservoir chamber; a standby unit having a standby area where the processing liquid cartridge is standing-by; a transport mechanism that transports the processing liquid cartridge between the standby unit and a location where the processing liquid cartridge supplies the processing liquid to the process object; and an actuating mechanism provided in the transport mechanism that drives the pusher unit to push the processing liquid stored in the reservoir chamber.. . ... Tokyo Electron Limited

06/11/15 / #20150162233

Method for calculating distance, method for neutralizing electrostatic chuck, and processing apparatus

There are provided a method for obtaining a distance between a base portion of an electrostatic chuck and a back surface of a target object and a method for neutralizing the electrostatic chuck based on the obtained distance. The electrostatic chuck has an upper surface including the base portion and a plurality of convex portions projecting from the base portion. ... Tokyo Electron Limited

06/11/15 / #20150162223

Substrate processing apparatus and substrate processing method

There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a rf power source applying to the first electrode a rf voltage whose frequency is equal to or higher than 40 mhz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the rf voltage.. ... Tokyo Electron Limited

06/11/15 / #20150162203

Method for etching silicon layer and plasma processing apparatus

Disclosed is a method of etching a silicon layer by removing an oxide film formed on a workpiece which includes the silicon layer and a mask provided on the silicon layer. The method includes: (a) forming a denatured region by generating plasma of a first processing gas containing hydrogen, nitrogen, and fluorine within a processing container accommodating the workpiece therein to denature an oxide film formed on a surface of the workpiece; (b1) removing the denatured region by generating plasma of a rare gas within the processing container; and (c) etching the silicon layer by generating plasma of a second processing gas within the processing container.. ... Tokyo Electron Limited

06/11/15 / #20150162202

Etching method

An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas.. ... Tokyo Electron Limited

06/11/15 / #20150162193

Plasma processing method and plasma processing apparatus

Disclosed is a plasma processing method including: growing a polycrystalline silicon layer on a processing target base body; and exposing the polycrystalline silicon layer to hydrogen radicals by supplying a processing gas containing hydrogen into a processing container that accommodates the processing target base body including the polycrystalline silicon layer grown thereon and radiating microwaves within the processing container to generate the hydrogen radicals.. . ... Tokyo Electron Limited

06/11/15 / #20150162170

Plasma processing apparatus and focus ring

A degree of tilting caused by consumption of a focus ring can be suppressed. A plasma processing apparatus includes a chamber configured to perform a plasma process on a target object; a mounting table which is provided within the chamber and has a mounting surface on which the target object is mounted; and the focus ring, provided on the mounting table to surround the target object mounted on the mounting surface, having a first flat portion lower than the mounting surface, a second flat portion higher than the first flat portion and not higher than a target surface of the target object, and a third flat portion higher than the second flat portion and the target surface of the target object in sequence from an inner peripheral side thereof to an outer peripheral side thereof.. ... Tokyo Electron Limited

06/11/15 / #20150161520

System and method for learning and/or optimizing manufacturing processes

A system and method for learning and/or optimizing processes related to semiconductor manufacturing is provided. A learning component generates a set of candidate process models based on process data associated with one or more fabrication tools. ... Tokyo Electron Limited

06/11/15 / #20150160557

Direct current superposition freeze

Systems and methods include improved techniques for patterning substrates, including improvements to double patterning techniques. Direct current superposition plasma processing is combined with photolithographic patterning techniques. ... Tokyo Electron Limited

06/11/15 / #20150159642

Processing liquid supplying apparatus, processing liquid supplying method and storage medium

In one embodiment, a feed pump (6) of a tube pump type is used for supplying a processing liquid. The tube pump has a squeezing member (65) that moves from a first axial position of a tube (62) at which the squeezing member starts pinching of the tube, to a second axial position at which the squeezing member leaves the tube after feeding the processing liquid toward an ejecting part such as a nozzle (51). ... Tokyo Electron Limited

06/11/15 / #20150159295

Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystalize silicones contained in at least the second amorphous silicon film.. . ... Tokyo Electron Limited

06/11/15 / #20150159276

Substrate processing apparatus, substrate processing method and storage medium storing substrate processing program

A substrate entire region treatment process of discharging a processing fluid of a temperature different from a surface temperature of a substrate 3 from a first nozzle 24 toward the substrate is performed while moving the first nozzle toward an outer side from an entire region treatment start position p2 located at a central portion to an entire region treatment end position p5 located at a peripheral portion. Then, after moving the first nozzle toward an inner side to a peripheral region treatment start position p6 located at an outer position than the entire region treatment start position p2, a substrate peripheral region treatment process of discharging the processing fluid from the first nozzle toward the substrate is performed while moving the first nozzle toward the outer side from the peripheral region treatment start position p6 to a peripheral region treatment stop position p7 located at a peripheral portion.. ... Tokyo Electron Limited

06/11/15 / #20150159270

Plasma processing apparatus

Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.. . ... Tokyo Electron Limited

06/11/15 / #20150159269

Plasma processing apparatus

Provided is a plasma processing apparatus comprising an exhaust path extending from the exhaust hole to the pump, wherein the pump is configured to depressurize inside of the processing container and the exhausting path, wherein the exhaust path includes a horizontally linearly extended portion, wherein the horizontally linearly extended portion of the exhaust path has a rectangular or oval cross-section having a horizontal length longer than a vertical length; wherein the plasma processing apparatus further includes a pressure control valve disposed in the horizontally linearly extended portion of the exhaust path; and wherein the pressure control valve is formed of a pressure control valve plate having substantially same shape and size as those of the cross-section and a shaft formed in the pressure control valve along the horizontal length of the cross-section, in such a manner that the pressure control valve plate rotates about the shaft.. . ... Tokyo Electron Limited

06/11/15 / #20150158242

Imprint device and template

An imprint device includes a template provided with a plate-shaped template body and a pattern portion having a predetermined shape formed on a surface of the template body; a template holding mechanism configured to hold the template; a substrate holding mechanism configured to hold a substrate formed with a resin layer made of a photo-curable resin in a state where the pattern portion of the template and the resin layer are in contact with each other; and a light irradiating mechanism configured to irradiate a light in a wavelength range for curing the photo-curable resin. The template allows the light to be incident from a lateral surface of the template body, and the light irradiating mechanism irradiates the light to the resin layer by allowing the light to be incident from the lateral surface of the template body and transmitted through the template body.. ... Tokyo Electron Limited

06/04/15 / #20150155197

Coating film forming apparatus, coating film forming method, and storage medium

A coating film forming apparatus includes a substrate holding unit, a ring-shaped member annularly installed along a circumferential direction of the substrate so as to cover an upper side of a peripheral edge portion of the substrate, and a control unit that outputs a control signal so as to perform: positioning the ring-shaped member at a processing position where an air flow flowing above the peripheral edge portion of the substrate is straightened; rotating the substrate at a first revolution number such that a coating liquid supplied to a central portion of the substrate is diffused toward the peripheral edge portion by a centrifugal force; bringing the ring-shaped member to a retreated position where an air flow flowing near a front surface of the substrate is prevented from becoming turbulent; and reducing the revolution number of the substrate to a second revolution number lower than the first revolution number.. . ... Tokyo Electron Limited

06/04/15 / #20150155141

Plasma processing apparatus

A plasma processing apparatus of the present disclosure includes a processing container provided with an opening to carry an object to be processed (“workpiece”) into or out of a chamber adjacent to the processing container; a microwave introducing mechanism configured to introduce microwaves into the processing container; an exhaust device configured to evacuate the processing container; and a thermal insulating member provided between an outer surface of a gate valve that is provided near the opening and the chamber adjacent to the processing container. The thermal insulating member is coated with a conductive film at least on a surface of the thermal insulating member facing the outer surface of the gate valve, a surface of the thermal insulating member facing the chamber adjacent to the processing container, and a surface of the thermal insulating member exposed to outer air.. ... Tokyo Electron Limited

06/04/15 / #20150155139

Dielectric window, antenna and plasma processing apparatus

A slot plate is provided at one surface of a dielectric window. The other surface of the dielectric window includes a flat surface surrounded by an annular first recess, and a plurality of second recesses formed at a bottom surface of the first recess. ... Tokyo Electron Limited

06/04/15 / #20150152557

Film forming method and film forming device

Step 1 (pressure increasing step) increases pressure within a raw material container to first pressure by supplying carrier gas to the inside of the raw material container by pcv. Step 2 (pressure decreasing step) decreases the pressure within the raw material container to second pressure by operating an exhaust device and discarding the raw material gas from a raw material gas supply pipe via an exhaust bypass pipe. ... Tokyo Electron Limited

06/04/15 / #20150152556

Method and device for controlling pattern and structure formation by an electric field

A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. ... Tokyo Electron Limited

06/04/15 / #20150151227

Filter device

A filter device includes a housing having space, a filter in the space of the housing, a first joint connected to a first port of the housing and having an open end which connects to a supply path of a processing liquid, a second joint connected to a second port of the housing and having an open end which connects to the path, and an exhaust joint connected to an exhaust port of the housing and having an open end which connects to an exhaust path. The first and second ports introduce or discharge the liquid and have openings to the opposite end portions of the space, respective, the filter is intersecting a straight line passing through the centers of the first and second ports, and the first, the second and exhaust joints are formed to extend in the same direction outside the space of the housing.. ... Tokyo Electron Limited

05/28/15 / #20150147888

Liquid processing apparatus, liquid processing method, and storage medium

A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.. . ... Tokyo Electron Limited

05/28/15 / #20150147827

Substrate tuning system and method using optical projection

Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. ... Tokyo Electron Limited

05/28/15 / #20150147487

Method and apparatus for forming organic monolayer

A method for forming an organic monolayer includes supplying to an object an organic material gas including organic molecules, each molecule having a binding site that is to be chemically bonded to a surface of the object. The method further includes supplying excited hydrogen to the organic material gas before the organic material gas reaches the object to substitute an end of the binding site with hydrogen, and forming an organic monolayer by reaction between the end substituted with the hydrogen and the object.. ... Tokyo Electron Limited

05/28/15 / #20150147476

Plating method, plating apparatus, and storage medium

A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. ... Tokyo Electron Limited

05/28/15 / #20150146498

Substrate processing apparatus and liquid mixing method

A substrate processing apparatus includes a mixing tank, a first opening/closing valve, a second opening/closing valve, a first flow rate measuring unit, a second flow rate measuring unit, a control unit, and a substrate processing unit. A first liquid and a second liquid are mixed such that the second liquid is mixed in an amount more than that of the first liquid. ... Tokyo Electron Limited

05/28/15 / #20150146187

Substrate carrying device

A substrate carrying device includes pads that hold a substrate, and a hand having recesses formed therein. The pads are placed in the recesses and detachably attached to the hand. ... Tokyo Electron Limited

05/28/15 / #20150146178

Substrate tuning system and method using optical projection

Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. ... Tokyo Electron Limited

05/28/15 / #20150145547

Probe apparatus and wafer mounting table for probe apparatus

A probe apparatus includes a card clamp unit detachably supporting a probe card; and a wafer mounting table adsorbing the semiconductor wafer and bringing electrodes on the semiconductor wafer into contact with the probes. In order to mount the semiconductor wafer including an annular portion protruding from a rear surface of an outer peripheral portion and a thin portion having a thickness smaller than the annular portion, the wafer mounting table includes a planar portion on which the thin portion is mounted; and a step-shaped portion which is formed at an edge of the planar portion and mounts the annular portion thereon. ... Tokyo Electron Limited

05/28/15 / #20150145540

Semiconductor inspection system and method for preventing condenation at interface part

Provided are a semiconductor inspection system and a method for preventing condensation at an interface part. The inspection system is characterized by being equipped with: a probe apparatus configured to bring a probe into contact with a target object whose temperature is controlled so that the probe is electrically connected with the target object; a tester configured to inspect the target object by supplying an inspection signal to the target object and detect an output signal outputted from the target object; an interface part which electrically connects the probe with the tester; a vacuum seal mechanism configured to seal the interface part in an airtight state; a gas exhaust unit configured to evacuate the interior of the interface part to a depressurized atmosphere; and a dry gas supply unit configured to supply a dry gas into the evacuated interface part while controlling a flow rate of the dry gas.. ... Tokyo Electron Limited

05/28/15 / #20150144622

Microwave heat treatment apparatus and microwave heat treatment method

A microwave heat treatment apparatus includes: a processing vessel configured to accommodate a substrate therein; a support member configured to rotatably support the substrate in the processing vessel; a microwave introduction device configured to generate a microwave for processing the substrate and introduce the microwave into the processing vessel; a first cooling gas introduction part installed to face a main surface of the substrate supported by the support member, the main surface being a target to be processed; a second cooling gas introduction part installed in a lateral side of the substrate supported by the support member; and a control unit configured to independently control the introduction of a cooling gas from the first cooling gas introduction part and the introduction of the cooling gas from the second cooling gas introduction part.. . ... Tokyo Electron Limited

05/28/15 / #20150144621

Matching method and microwave heating method

A matching method and a microwave heating method in a microwave heating apparatus for heating a substrate by introducing a microwave into a processing chamber comprises an initial matching step of performing a matching so that a reflection power to a microwave introducing unit is minimized in a state where the substrate is maintained at a first height position by a supporting member. And a second height position determination step of introducing the microwave into the processing chamber by the microwave introducing unit and determining a second height position of the substrate based on at least a temperature of the substrate while adjusting a height of the substrate by the supporting member.. ... Tokyo Electron Limited

05/28/15 / #20150144595

Gas cluster irradiation mechanism, substrate processing apparatus using same, and gas cluster irradiation method

A gas cluster irradiation mechanism includes at least one nozzle unit having a plurality of gas injection nozzles, and a gas supply unit for supplying the gas to the nozzle unit. The plurality of the gas injection nozzles is set such that when the gas is supplied from the gas injection nozzles at a preset flow rate a pressure in the processing chamber remains below a limit at which the gas cluster begins to be destroyed. ... Tokyo Electron Limited

05/28/15 / #20150144266

Substrate processing apparatus

The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.. . ... Tokyo Electron Limited

05/28/15 / #20150144265

Plasma processing apparatus and microwave introduction device

A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. ... Tokyo Electron Limited

05/21/15 / #20150140828

Etching method and plasma processing apparatus

A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. ... Tokyo Electron Limited

05/21/15 / #20150140825

Method for chemical polishing and planarization

A chemical planarization process described herein can be used for planarizing a substrate without using mechanical abrasion. A developable planarization material can be applied to a substrate having a non-planar topography, such that a planar surface results. ... Tokyo Electron Limited

05/21/15 / #20150140822

Multilayer film etching method and plasma processing apparatus

In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. ... Tokyo Electron Limited

05/21/15 / #20150140821

Etching method and etching apparatus

An etching method is provided that includes the steps of supplying an etching gas containing a fluorocarbon (cf) based gas into a processing chamber, generating a plasma from the etching gas, and etching a silicon oxide film through a polysilicon mask using the plasma. The polysilicon film has a predetermined pattern and is arranged on the silicon oxide film. ... Tokyo Electron Limited

05/21/15 / #20150140816

Pre-treatment method for plating and storage medium

Catalytic metal nanoparticles can be attached on a base. A pre-treatment method for plating includes a catalytic particle-containing film forming process of forming a catalytic particle-containing film on a surface of a substrate by supplying, onto the substrate, a catalytic particle solution which is prepared by dispersing the catalytic metal nanoparticles and a dispersing agent in a solvent containing water; a first heating process of removing moisture contained at least in the catalytic particle-containing film by heating the substrate to a first temperature; and a second heating process of polymerizing the dispersing agent to have a sheet shape by heating the substrate to a second temperature higher than the first temperature after the first heating process and fixing the catalytic metal nanoparticles on a base layer by covering the catalytic metal nanoparticles with the sheet-shaped dispersing agent.. ... Tokyo Electron Limited

05/21/15 / #20150140694

Gas supply device, film forming apparatus, gas supply method, and storage medium

A gas supply device for intermittently supplying raw material gas into a film forming process unit that includes a raw material container for accommodating a raw material, a carrier gas supply unit for supplying carrier gas to evaporate the raw material, a raw material gas supply path for supplying the raw material gas and the carrier gas into the film forming process unit, a flow rate detector, a flow rate regulating valve, a raw material supply and block unit for supplying and blocking the raw material gas into the film forming process unit, and a control unit for outputting a control signal for intermittently supplying the raw material gas into the film forming process unit.. . ... Tokyo Electron Limited

05/21/15 / #20150140485

Processing liquid supplying apparatus, processing liquid supplying method and storage medium

A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.. ... Tokyo Electron Limited

05/21/15 / #20150140209

Pre-treatment method for plating and storage medium

A pre-treatment method for plating can form a plating layer having sufficient adhesivity on an inner surface of a recess and on a surface of a substrate at an outside of the recess even when the recess has a high aspect ratio. The pre-treatment method for plating includes a preparation process of preparing the substrate having the recess; a first coupling layer forming process of forming a first coupling layer 21a at least on the inner surface of the recess of the substrate by using a first coupling agent; and a second coupling layer forming process of forming a second coupling layer 21b at least on the surface of the substrate at the outside of the recess by using a second coupling agent after the first coupling layer forming process.. ... Tokyo Electron Limited

05/21/15 / #20150139758

Substrate conveyance method, and substrate conveyance device

The purpose of the present invention is to accurately deal with a variety of processing conditions and variations thereof, and to improve total throughput by efficiently operating a conveyance arm device in accordance with the processing conditions, even during cleaning. When a first wafer is loaded on a load-lock chamber, a conveyance-sequence category for operating each of a number of steps for a conveyance arm device capable of operating during cleaning is selected in accordance with processing conditions of the wafer, and a plurality of operation patterns are selected, combined and scheduled. ... Tokyo Electron Limited

05/21/15 / #20150136759

Microwave heating apparatus

A microwave heating apparatus includes a processing chamber configured to accommodate a substrate; a substrate holding unit configured to hold and rotate the substrate in the processing chamber; a microwave generating source configured to generate a microwave; and a plurality of microwave inlet ports formed at a surface of the processing chamber which faces the substrate in the processing chamber, each of the microwave inlet ports having an opening area that gradually becomes wider toward the substrate. The microwave generated by the microwave generating source is irradiated to the substrate in the processing chamber through the microwave inlet ports to heat the substrate.. ... Tokyo Electron Limited

05/21/15 / #20150136596

Magnetron sputtering device, magnetron sputtering method, and non-transitory computer-readable storage medium

A magnetron sputtering apparatus includes a target disposed to face a substrate mounted on a mounting part in a vacuum vessel and a magnet arrangement assembly installed at a back side of the target and having an array of magnets, the magnetron sputtering apparatus including: a gas supply part configured to supply a plasma generation gas into the vacuum vessel; a rotary mechanism configured to rotate the mounting part; a power supply part configured to apply a voltage to the target; a moving mechanism configured to move the magnet arrangement assembly between a first region and a second region; and a control unit configured to output a control signal, such that an average moving speed of the magnet arrangement assembly is different between the first region and the second region.. . ... Tokyo Electron Limited

05/21/15 / #20150136331

Peeling system

Disclosed is a peeling system which includes a peeling device, a plurality of first cleaning devices, an inversion device, a second cleaning device, and first to third conveyance devices. The peeling device is configured to separate a superimposed substrate into a first substrate and a second substrate. ... Tokyo Electron Limited

05/21/15 / #20150136186

System for processing substrates with two or more ultraviolet light sources that provide different wavelengths of light

Systems for cleaning substrates including cleaning of semiconductor substrates, use atmospheric or sub-atmospheric ultraviolet (uv) light to improve selectivity of conventional wet chemical cleaning in the manufacture of semiconductor devices. The uv light systems are configured to improve front-end-of-line (feol) (e.g., non-metal) or back-end-of-line (beol) (e.g., metal) removal of etch by-products (e.g., polymers) and/or mask layers from underlying materials. ... Tokyo Electron Limited

05/21/15 / #20150136183

System of controlling treatment liquid dispense for spinning substrates

Provided is a method for cleaning an ion implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid in two or more nozzles is generated. ... Tokyo Electron Limited

05/21/15 / #20150136027

Trap assembly in film forming apparatus

A trap mechanism for trapping exhaust gas from a process chamber. The trap assembly includes a housing containing a plurality of trap units. ... Tokyo Electron Limited

05/21/15 / #20150135514

Method of adsorbing target object on mounting table and plasma processing apparatus

A method of adsorbing a target object on a mounting table is provided. The mounting table is provided within a processing vessel that partitions a depressurizable space in a processing apparatus which processes a processing target object within the space. ... Tokyo Electron Limited

05/07/15 / #20150126046

Multi-cell resonator microwave surface-wave plasma apparatus

A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. ... Tokyo Electron Limited

05/07/15 / #20150126044

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.. . ... Tokyo Electron Limited

05/07/15 / #20150126037

Non-ambipolar plasma ehncanced dc/vhf phasor

This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a dc plasma chamber adjacent to the non-ambipolar system. ... Tokyo Electron Limited

05/07/15 / #20150126036

Controlling etch rate drift and particles during plasma processing

The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a yxoyfz layer that comprises y in a range from 20 to 40%, o in a range from ≦60%, and f in a range of ≦75%. Alternatively, the yxoyfz layer can comprise y in a range from 25 to 40%, o in a range from 40 to 55%, and f in a range of 5 to 35% or y in a range from 25 to 40%, o in a range from 5 to 40%, and f in a range of 20 to 70%.. ... Tokyo Electron Limited

05/07/15 / #20150126033

Method for deep silicon etching using gas pulsing

Techniques disclosed herein include methods for etching deep silicon features using a continuous gas pulsing process that etches high aspect ratio features having a relatively smooth profile. Such methods provide an etch rate faster than time-multiplexed etch-deposition processes. ... Tokyo Electron Limited

05/07/15 / #20150126027

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes: forming an insulating film on a substrate where a first conductive film is formed; forming a recess in the insulating film such that the first conductive film is exposed in a portion of the recess; forming a metal oxide film to cover the insulating film and the first conductive film after forming a recess; performing a hydrogen radical treatment of irradiating the substrate with atomic hydrogen after forming a metal oxide film; and forming a second conductive film in the recess.. . ... Tokyo Electron Limited

05/07/15 / #20150125793

Processing liquid supplying apparatus and method of supplying processing liquid

A processing liquid supplying apparatus performs an ejecting step in which a processing liquid suctioned into a pump passes through a filter device and is ejected from an ejecting part without returning the processing liquid back to the pump; a returning step in which the processing liquid suctioned into the pump is returned to a processing liquid source side of a mixing section; and a replenishing step in which the processing liquid returned to the processing liquid source side is suctioned into the pump together with the processing liquid replenished from the processing liquid source. The processing liquid passes through the filter device in at least one of the returning step and the replenishing step. ... Tokyo Electron Limited

05/07/15 / #20150125791

Line pattern collapse mitigation through gap-fill material application

Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. ... Tokyo Electron Limited

05/07/15 / #20150125606

Method of forming mask structure, film forming apparatus and non-transitory storage medium

A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film.. . ... Tokyo Electron Limited

05/07/15 / #20150125238

Conveyance device and substrate processing system

A conveyance device, which conveys wafers in a casing 30, includes a primary blowing fan 17 that generates airflow within the casing 30 in a first direction; a discharge opening 26 that is located at a downstream side of the airflow generated by the primary blowing fan 17, is interconnected with the interior of the casing 30, and discharges gases at the interior of the casing 30 outside of the casing 30; a base 18d that is supported by a gate-shaped conveyance arm 22 disposed within the casing 30 and moves within the casing 30 at the upstream side of the discharge opening 26 and at the downstream side of the primary blowing fan 17; an end effector 21 that is located at the base 18d and that carries wafers; and a blowing fan 19 that is located at the base and that generates airflow in the first direction.. . ... Tokyo Electron Limited

05/07/15 / #20150125068

Defect analyzing apparatus, substrate processing system, defect analyzing method and computer-readable storage medium

A potential trouble can be in advance suppressed by analyzing a defect of a wafer. A defect analyzing apparatus of analyzing a defect of a substrate includes an imaging unit configured to image target substrates; a defect feature value extracting unit configured to extract a defect feature value in a surface of the substrate based on the substrate image; a defect feature value accumulating unit configured to calculate an accumulated defect feature value with respect to the substrates to create an accumulation data ah; a defect determination unit configured to determine whether the accumulated defect feature value exceeds a preset critical value; and an output display unit configured to output a determination result from the defect determination unit.. ... Tokyo Electron Limited

05/07/15 / #20150124250

Spatially resolved optical emission spectroscopy (oes) in plasma processing

Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. ... Tokyo Electron Limited

05/07/15 / #20150124092

Clean-room monitoring device and method for monitoring clean-room

A clean-room monitoring device for monitoring the interior of a clean-room having a floor in which a removable cover such as a grating or a non-porous cover is disposed, includes: a monitoring camera which captures an image of the removable cover; a monitor which detects the existence of an opening exposed when the removable cover is removed, based on an image signal obtained from the monitoring camera, detects the presence of a workman approaching the opening if it is detected that the opening exists, and outputs a warning signal if the workman is detected; and a warning generator which receives the warning signal from monitor and issues a warning.. . ... Tokyo Electron Limited

04/30/15 / #20150118865

Method and apparatus for forming silicon oxycarbonitride film, silicon oxycarbide film and silicon oxynitride film

A method for forming a silicon oxycarbonitride film includes supplying a gas containing a silicon precursor having an oxygen-containing group onto a process surface of a workpiece, supplying a gas containing a carbon precursor onto the process surface, and supplying a nitriding gas onto the process surface subjected to the supplying a gas containing a silicon precursor and the supplying a gas containing a carbon precursor. The silicon oxycarbonitride film is formed on the process surface by the supplying the gas containing the silicon precursor, the supplying gas containing the carbon precursor and the supplying a nitriding gas without performing an oxidation process.. ... Tokyo Electron Limited

04/30/15 / #20150118859

Plasma processing method and plasma processing apparatus

A metal-containing deposit can be efficiently removed. A plasma processing method includes removing a deposit, which adheres to a member within a processing vessel and contains at least one of a transition metal and a base metal, by plasma of a processing gas containing a cxfy gas, in which x is an integer equal to or less than 2 and y is an integer equal to or less than 6, and without containing a chlorine-based gas and a nitrogen-based gas.. ... Tokyo Electron Limited

04/30/15 / #20150118858

Etching method for substrate to be processed and plasma-etching device

In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates a substrate to be processed; (b1) a step in which the inside of the processing container is evacuated; (c1) a step in which a noble gas is supplied into the processing container; and (d1) a step in which microwaves are supplied into the processing container so as to excite the plasma of the noble gas inside the processing container. The sequential process including the step of supplying the etchant of supplying the etchant gas, the evacuating step, the step of supplying the noble gas, and the step of exciting the plasma of the noble gas may be repeated.. ... Tokyo Electron Limited

04/30/15 / #20150118415

Plasma processing apparatus and method of performing plasma process

A plasma processing apparatus for processing a substrate includes a turntable for orbitally revolving a substrate mounting area; a nozzle portion facing the substrate mounting area and having gas discharge ports for generating plasma; an antenna including a linear portion extending to cover a substrate passage area on a downstream side relative to the nozzle portion and a separated portion, wound around a vertical axis, and generating induction plasma in a process area to which the gas is supplied; a faraday shield including a conductive plate provided between the antenna and the process area to cut off an electric field, and slits formed to orthogonally cross the antenna and cause a magnetic field to pass therethrough, wherein the slits are formed on aside lower than the linear portion and a portion of the conductive plate without the slits is positioned on a side lower than a curved portion.. . ... Tokyo Electron Limited

04/30/15 / #20150114930

Plasma processing method and plasma processing apparatus

A plasma processing method of the present disclosure includes attaching a si-containing material or a n-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing c and f, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the si-containing material or the n-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the si-containing material or the n-containing material.. . ... Tokyo Electron Limited

04/30/15 / #20150114835

Film forming apparatus

A film forming apparatus includes a stage provided in the processing chamber; three or more targets uniformly arranged along a circle centering around a vertical axis line that passes through a center of the stage, each of the targets having a substantially rectangular shape; a shutter provided between the targets and the stage, the shutter including an opening which allows one of the targets to be selectively exposed to the stage; and a rotation shaft coupled to the shutter, the rotation shaft extending along the vertical axis line. A width of the opening in a tangent direction to the circle centering around the vertical axis line is set such that two adjacent targets in a circumferential direction of the circle among the targets are allowed to be partially and simultaneously exposed to the stage.. ... Tokyo Electron Limited

04/30/15 / #20150114567

Focus ring and plasma processing apparatus

A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. ... Tokyo Electron Limited

04/30/15 / #20150114564

Substrate processing apparatus and shutter member

In a substrate processing apparatus of the present disclosure, a bearing member includes a decaying mechanism provided with a connecting shaft inserted therein and configured to decay radicals or ions; a first member configured to cover the decaying mechanism; and a second member disposed at the connecting shaft and provided with the connecting shaft inserted therein while being in contact with a sealing member. Further, an end of the first member and an end of the second member are connected to be engaged with each other, an invasion path is formed to allow the radicals to invade from the connected portion of the end of the first member and the end of the second member, and the invasion path is formed to be folded back in an extending direction of the connecting shaft. ... Tokyo Electron Limited

04/30/15 / #20150114563

Plasma processing apparatus and probe apparatus

A plasma processing apparatus includes a high frequency power supply turning a high frequency power on/off and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. ... Tokyo Electron Limited

04/30/15 / #20150114562

Substrate processing apparatus

Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.. ... Tokyo Electron Limited

04/30/15 / #20150114561

Liquid processing apparatus

A liquid processing apparatus of the present disclosure performs a liquid processing by supplying a processing liquid to a substrate that is rotating. A substrate holding unit configured to be rotatable around a vertical axis is provided with a holding surface to attract and hold a bottom surface of the substrate horizontally. ... Tokyo Electron Limited

04/30/15 / #20150114560

Substrate processing apparatus and liquid supply apparatus

A substrate processing includes a holding mechanism, a plurality of nozzles, and an adjusting unit. The holding mechanism rotatably holds a substrate. ... Tokyo Electron Limited

04/30/15 / #20150113826

Substrate placing table and substrate processing apparatus

A peripheral member having the temperature thereof controlled to a first temperature; a center member, which is not in contact with the peripheral member and has the temperature thereof controlled to a second temperature; a periphery placing member having the peripheral portion of the wafer placed thereon; and a center placing member having the center portion of the wafer w placed thereon. The periphery placing member and the center placing member respectively have shapes different from those of the peripheral member and the center member so as to correspond to processing distribution. ... Tokyo Electron Limited

04/23/15 / #20150111388

Substrate processing method and substrate processing apparatus

A substrate processing method for processing a substrate by supplying a processing gas into a processing chamber and allowing the processing gas to react on the substrate in the processing chamber by using a substrate processing apparatus includes the processing chamber accommodating the substrate, a processing gas supply unit for supplying the processing gas into the processing chamber, and a gas exhaust unit, for exhausting the processing chamber, having a turbo molecular pump. The method controls a processing uniformity by controlling a revolution speed of the turbo molecular pump while maintaining a pressure in the processing chamber to a predetermined level when by-products having a larger molecular mass compared to the processing gas are generated by the reaction of the processing gas.. ... Tokyo Electron Limited

04/23/15 / #20150111387

Use of topography to direct assembly of block copolymers in grapho-epitaxial applications

A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (dsa) is formed surrounding the exposed topography. ... Tokyo Electron Limited

04/23/15 / #20150111386

Use of topography to direct assembly of block copolymers in grapho-epitaxial applications

A method is provided for forming a patterned topography on a substrate. The substrate is provided with features formed atop that constitute an existing topography, and a template for directed self-assembly (dsa) surrounds the exposed topography. ... Tokyo Electron Limited

04/23/15 / #20150110975

Method for forming manganese-containing film

A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film.. . ... Tokyo Electron Limited

04/23/15 / #20150110973

Plasma processing apparatus and plasma processing method

A plasma processing apparatus of the present disclosure includes a processing container configured to accommodate a wafer; a placing unit provided on a bottom surface of the processing container to place the wafer thereon; a first processing gas supply pipe provided in a central portion of a ceiling of the processing container to supply a first processing gas into the processing container; a second processing gas supply pipe provided in a side wall of the processing container to supply a second processing gas into the processing container; a rectifying gas supply pipe provided in the side wall of the processing container above the second processing gas supply pipe to supply a rectifying gas downward into the processing container; and a radial line slot antenna configured to radiate microwave into the processing container.. . ... Tokyo Electron Limited

04/23/15 / #20150110959

Film forming method and film forming apparatus

A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.. ... Tokyo Electron Limited

04/23/15 / #20150109716

Plasma processing apparatus, power supply unit and mounting table system

A plasma processing apparatus includes a mounting table including a lower electrode and an electrostatic chuck, a high frequency power supply electrically connected to the lower electrode, a heater provided in the electrostatic chuck, a heater power supply for supplying a power to the heater, a filter unit including a filter connected to the heater power supply, a rod-shaped power feeder connecting the heater power supply and the heater via the filter, an insulating tubular portion having an inner hole through which the power feeder extends, and a conductive choke portion serving to suppress a microwave propagating through the tubular portion. The choke portion includes a first portion extending from the power feeder in a direction intersecting with a longitudinal direction of the power feeder and a cylindrical second portion extending, between the tubular portion and the power feeder, from a peripheral portion of the first portion.. ... Tokyo Electron Limited

04/23/15 / #20150108897

Microwave plasma processing apparatus and microwave supply method

Disclosed is a microwave plasma processing apparatus including: a processing container configured to define a processing space a microwave generator configured to generate microwaves for generating plasma of a processing gas introduced into the processing space, a distributor configured to distribute the microwaves to a plurality of waveguides using a variable distribution ratio, an antenna installed in the processing container to seal the processing space and configured to radiate the microwaves distributed to each of the plurality of waveguides by the distributor to the processing space, a monitor unit configured to monitor a power of the microwaves distributed to each of the plurality of waveguides by the distributor, and a distribution ratio control unit configured to correct the distribution ratio used for distribution of the microwaves by the distributor based on a difference between a ratio of the power of the microwaves monitored by the monitor unit and a previously designated distribution ratio.. . ... Tokyo Electron Limited

04/23/15 / #20150108087

Use of grapho-epitaxial directed self-assembly to precisely cut lines

A method for forming a patterned topography on a substrate is provided. The substrate is initially provided with an exposed plurality of lines formed atop. ... Tokyo Electron Limited

04/23/15 / #20150108001

Liquid processing jig and liquid processing method

Disclosed is a liquid processing jig for performing a predetermined processing on a workpiece using a processing liquid. The liquid processing jig includes: a liquid processing unit formed on a surface of the liquid processing jig and configured to perform a predetermined processing on the workpiece by the processing liquid; a liquid supplying unit configured to supply the processing liquid to the liquid processing unit; a liquid supplying channel configured to connect the liquid supplying unit and the liquid processing unit and supply the processing liquid from the liquid supplying unit to the liquid processing unit; and a liquid discharging channel configured to discharge the processing liquid from the liquid processing unit. ... Tokyo Electron Limited

04/23/15 / #20150107773

Plasma processing apparatus

A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.. ... Tokyo Electron Limited

04/23/15 / #20150107772

Gas supply device and substrate processing apparatus

A shower head 13 (gas supply device) of supplying a processing gas and an additional gas from a processing gas supply source and an additional gas source, respectively, into a processing space s includes multiple gas distribution plates 28 to 31, the cooling plate 32, and the cover plate 33 stacked in sequence. A peripheral gas diffusion space 35 and an outermost gas diffusion space 36 are formed in the undermost gas distribution plate 28. ... Tokyo Electron Limited

04/23/15 / #20150107771

Trap apparatus and substrate processing apparatus

A trap apparatus includes: a first cylindrical member including a space; a second cylindrical member removably disposed in the space and including side opening which allows a gas stream to flow in therethrough, and a downstream side opening which allows the gas stream flowing in from the upstream side opening to flow out therethrough; a downstream side trap member which is disposed inside the second cylindrical member to block the downstream side opening; and an upstream side trap member which is disposed between the downstream side trap member and the upstream side opening of the second cylindrical member and includes a concave portion recessed in a direction approaching the downstream side trap member.. . ... Tokyo Electron Limited

04/23/15 / #20150107631

Liquid processing method

A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. ... Tokyo Electron Limited

04/23/15 / #20150107622

Substrate liquid processing apparatus and substrate liquid processing method

Disclosed is a substrate liquid processing apparatus including: a first processing liquid supply mechanism provided with a first tank in which a processing liquid is stored and a first nozzle through which the processing liquid stored in the first tank is ejected, and configured to supply the processing liquid to a first surface of a substrate by the first nozzle; a second processing liquid supply mechanism provided with a second tank in which a processing liquid having the same composition as the processed liquid stored in the first tank is stored and a second nozzle through which the processed liquid stored in the second tank is ejected, and configured to supply the processed liquid to a second surface of the substrate by the second nozzle; a processing unit configured to perform processing on the substrate using the processed liquids supplied by the first nozzle and the second nozzle; and a recovery line configured to recover the processed liquids which are supplied to the substrate from the first nozzle and the second nozzle and mixed with each other from the processing unit and return the recovered processed liquids to the second tank.. . ... Tokyo Electron Limited

04/23/15 / #20150107517

Plasma processing apparatus

A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.. ... Tokyo Electron Limited

04/23/15 / #20150107515

Vacuum processing apparatus

The disclosure provides an assembly method of a vacuum processing apparatus having a reaction vessel and an exhaust port that are made of quartz and airtightly connected to each other, in order to prevent breakage of the vessel. The method includes (a) mounting an attachment member on one end portion of the reaction vessel, (b) connecting and fixing at least a flange portion of an exhaust pipe to the exhaust port, (c) fixing the attachment member to a portion of the exhaust pipe including at least the flange portion connected and fixed to the exhaust port by using fixing members after (a) and (b), (d) fixing the attachment member to a support portion after (a), and (e) fixing the exhaust pipe to an exhaust pipe fixing portion different from the attachment member at a lower position than a fixing position of the attachment member after completing (a) to (d).. ... Tokyo Electron Limited

04/16/15 / #20150104957

Resist mask processing method

A method for processing a resist mask includes: (a) a step of preparing, in a processing chamber, a target object to be processed having a patterned resist mask provided thereon; and (b) a step of generating a plasma of the hydrogen-containing gas by supplying a hydrogen-containing gas and supplying a microwave into the processing chamber. The hydrogen-containing gas may be, e.g., h2 gas.. ... Tokyo Electron Limited

04/16/15 / #20150104951

Method for etching copper layer

Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. ... Tokyo Electron Limited

04/16/15 / #20150104950

Plasma processing method

A plasma processing method for processing a silicon containing film formed on a substrate including a step of removing a reaction product with a first plasma formed from a first gas containing halogen, hydrogen, and carbon in a case where the reaction product is formed when performing an etching process on the silicon containing film by using an etching mask having an etching pattern.. . ... Tokyo Electron Limited

04/16/15 / #20150101758

Peel-off apparatus, peel-off system, peel-off method and computer storage medium

Disclosed is a peel-off apparatus comprising: a first holding unit configured to hold a first substrate of a superimposed substrate; a second holding unit configured to hold a second substrate of the superimposed substrate; and a moving unit configured to move a part of outer periphery of the first holding unit to be separated from the second holding unit. The first holding unit includes: a plate type elastic member connected to the moving unit; and a plurality of adsorbing units provided in the elastic member to adsorb the first substrate. ... Tokyo Electron Limited

04/16/15 / #20150101532

Apparatus for forming silicon-containing thin film

Provided is an apparatus for forming a silicon-containing thin film, the apparatus including a controller which is configured to control a process gas supplying mechanism, a heating device, and an exhauster to perform: forming a first seed layer on a base by adsorbing at least silicon included in an aminosilane-based gas on the base, using the aminosilane-based gas; forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and forming the silicon-containing thin film on the dual seed layer.. . ... Tokyo Electron Limited

04/09/15 / #20150099374

Method and apparatus of forming silicon nitride film

Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed.. . ... Tokyo Electron Limited

04/09/15 / #20150099366

Plasma etching method

Provided is a plasma etching method capable of favorably forming masks used when etching a multilayer film. This plasma etching method for etching boron-doped amorphous carbon involves using a plasma of a gas mixture comprising a chlorine gas and an oxygen gas, and setting the temperature of a mounting stage (3) to 100° c. ... Tokyo Electron Limited

04/09/15 / #20150099355

Plating apparatus, plating method, and storage medium

A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110; and a top plate 21 that is provided above the substrate 2 and has an opening 22. The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2, and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. ... Tokyo Electron Limited

04/09/15 / #20150098790

Substrate transfer method

A substrate transfer method is performed by a transfer unit including a first transfer arm and a second transfer arm which are separately movable and are overlapped with each other. A moving speed of each of the first transfer arm and the second transfer arm that is not transferring a substrate is set to be higher than a moving speed of each of the first transfer arm and the second transfer arm that is transferring a substrate.. ... Tokyo Electron Limited

04/09/15 / #20150098788

Substrate transfer chamber and container connecting mechanism

A substrate transfer chamber for unloading the substrates from the containers includes a housing-shaped main body and a plurality of container connecting mechanisms to which the containers are connected. In the main body, some of the container connecting mechanisms are arranged on top of one another in a height direction of the main body.. ... Tokyo Electron Limited

04/09/15 / #20150096882

Plasma processing apparatus and plasma processing method

A plasma processing apparatus 1 includes a central inlet unit that introduces a processing gas containing at least one of an ar gas, a he gas and an etching gas toward a central portion of a wafer w; a peripheral inlet unit 61 that introduces the processing gas toward a periphery portion thereof; a flow rate adjusting unit that adjusts a flow rate of the processing gas introduced toward the central portion thereof from the central inlet unit 55 and a flow rate of the processing gas introduced toward the periphery portion thereof from the peripheral inlet unit 61; and a controller 49 that controls the flow rates of the processing gas adjusted by the flow rate adjusting unit such that a partial pressure ratio of the he gas to the ar gas contained in the processing gas is equal to or higher than a preset value.. . ... Tokyo Electron Limited

04/09/15 / #20150096682

Chemical liquid container replacement device, container mounting module, chemical liquid container replacement method, and substrate processing apparatus

In a chemical liquid container replacement device d2 configured to replace a chemical liquid container 50, multiple chemical liquid containers 50 respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device 61 is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container 50 of a container arrangement section 60. A loading/unloading port 62 loads a new chemical liquid container 50 for performing a liquid process on a substrate w and unloads a completely used chemical liquid container 50. ... Tokyo Electron Limited

04/09/15 / #20150096492

Coating apparatus

A coating apparatus includes: a slit nozzle that discharges a coating material from a discharge port in a slit shape; a moving mechanism that relatively moves the slit nozzle with respect to a substrate in a disk shape; and a control unit that controls the moving mechanism, wherein the control unit performs a first constant speed coating treatment of relatively moving the slit nozzle with respect to the substrate at a first speed, then an acceleration coating treatment of accelerating a relative moving speed of the slit nozzle with respect to the substrate to a second speed higher than the first speed, and then a second constant speed coating treatment of relatively moving the slit nozzle with respect to the substrate at the second speed.. . ... Tokyo Electron Limited

04/09/15 / #20150096490

Apparatus for plating process

An apparatus for a plating process includes: an outer chamber; an inner chamber covered by the outer chamber; a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber; a fluid supply unit configured to supply a plating solution to a preset position on the substrate; a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas; a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer chamber; a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plate.. . ... Tokyo Electron Limited

04/09/15 / #20150096441

Bubble removing method, bubble removing apparatus, degassing apparatus, and computer-readable recording medium

Disclosed is a bubble removing method in which fine bubbles are removed from a filter to improve the performance of the filter. The bubble removing method includes a step of degassing a processing liquid supplied from a supply source to prepare a highly degassed liquid (highly degassed liquid preparation), a step of supplying the prepared highly degassed liquid at a first processing liquid from a pump device to a filter device (temporary liquid permeation), a step of supplying the highly degassed liquid at a second processing liquid flow rate higher than the first processing liquid flow rate from the pump device to the filter device (initial liquid permeation), and a step of causing the highly degassed liquid to flow from the pump device to the filter device for a predetermined length of time (liquid permeation).. ... Tokyo Electron Limited

04/02/15 / #20150093886

Plasma processing method and plasma processing apparatus

A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container.. ... Tokyo Electron Limited

04/02/15 / #20150093518

Heat treatment apparatus and heat treatment method

The present disclosure provides an apparatus of performing a heat treatment with respect to a substrate mounted within a processing vessel, including: a substrate mounting stand including an inner portion configured to transfer heat to a central portion of the substrate and a heat generation regulating portion configured to generate heat through an induction heating; a magnetic field forming mechanism configured to form magnetic fields with alternating current power and to inductively heat the heat generation regulating portion; a power supply unit configured to supply the alternating current power to the magnetic field forming mechanism; a temperature measuring unit configured to measure a temperature of the heat generation regulating portion; a control unit configured to control the alternating current power; and a gas supply unit configured to supply a treatment gas to the substrate mounted on the mounting stand.. . ... Tokyo Electron Limited

04/02/15 / #20150092167

Processing liquid supplying apparatus and processing liquid supplying method

Disclosed is a processing liquid supplying apparatus. The apparatus includes: a processing liquid supply source configured to supply a processing liquid for processing a substrate to be processed; an ejection unit configured to eject the processing liquid to the substrate to be processed; a filter device configured to remove foreign matters in the processing liquid; a supply pump and an ejection pump which are provided in the supply path at a primary side and a secondary side of the filter device, respectively; and a control unit configured to output a control signal to decompress and degas the processing liquid supplied from the processing liquid supply source by using one of the supply pump and the ejection pump, and subsequently, pass the degassed processing liquid through the filter device beginning from the primary side to the secondary side of the filter device by using the supply pump and the ejection pump.. ... Tokyo Electron Limited

04/02/15 / #20150090708

Microwave heating apparatus and processing method

A microwave heating apparatus includes a processing chamber for accommodating a target, a support device for supporting the target in the processing chamber and a microwave introducing device for generating microwaves to introduce them into the processing chamber. The processing chamber further includes a top wall having a plurality of microwave introduction ports to introduce the microwaves generated in the microwave introducing device into the processing chamber. ... Tokyo Electron Limited

04/02/15 / #20150090692

Plasma processing apparatus and plasma processing method

A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.. ... Tokyo Electron Limited

04/02/15 / #20150090340

Processing-liquid supply apparatus and processing-liquid supply method

A processing-liquid supply apparatus includes a source, a discharge device, a supply channel connecting the source and discharge device, a filter device positioned in the channel to form first side having the source and second side having the discharge device, a pump device positioned in the channel, and a control device which controls suction and discharge by the pump device. The control device controls the pump device such that the liquid is discharged from the discharge device, that remaining of the liquid on the second side is suctioned to be returned to the first side and that the remaining of the liquid returned to the first side flows from the first toward second side together with refill of the liquid from the source, and the control device is set such that return amount of the liquid to the filter device is equal to or greater than amount of the discharge.. ... Tokyo Electron Limited

04/02/15 / #20150090305

Liquid processing apparatus

A liquid processing apparatus performs a liquid processing on a rotating substrate by supplying a processing liquid. Surrounding members surround a region including an upper space of a cup body surrounding the rotating substrate and provided with an opening above the substrate. ... Tokyo Electron Limited

03/26/15 / #20150088440

Solar power generation monitoring method and solar power generation monitoring system

A method for monitoring solar power generation includes calculating a cable loss, calculating a maximum power point tracking loss, calculating an inverter loss, calculating a system output coefficient, performing comprehensive calculation based on a rated output power of a solar cell array, a temperature coefficient of the solar cell array, a numerical value of a voltage-current measuring device, a numerical value of a actinometer, a numerical value of a thermometer and a numerical value of a ac power meter such that a module temperature loss is calculated, performing comprehensive calculation based on the cable loss, the maximum power point tracking loss, the inverter loss, the system output coefficient and the module temperature loss such that a module loss is calculated, and displaying and monitoring the cable loss, the maximum power point tracking loss, the inverter loss, the module temperature loss and the module loss.. . ... Tokyo Electron Limited

03/26/15 / #20150087162

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.. ... Tokyo Electron Limited

03/26/15 / #20150087161

Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film

A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer, wherein the seed layer formed on the tungsten film or the tungsten oxide film is formed by heating the object to be processed and supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film.. . ... Tokyo Electron Limited

03/26/15 / #20150087158

Method for depositing a film and film deposition apparatus

A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. ... Tokyo Electron Limited

03/26/15 / #20150087140

Film forming method, film forming device, and film forming system

A film forming method according to an embodiment includes: (a) a step of supplying a first precursor gas of a semiconductor material into a processing vessel in which a processing target substrate is disposed, the first precursor gas being adsorbed onto the processing target substrate during the step; (b) a step of supplying a second precursor gas of a dopant material into the processing vessel, the second precursor gas being adsorbed onto the processing target substrate during the step; and (c) a step of generating the plasma of a reaction gas in the processing vessel, a plasma treatment being performed during the step so as to modify a layer adsorbed onto the processing target substrate.. . ... Tokyo Electron Limited

03/26/15 / #20150086302

Substrate processing apparatus and maintenance method thereof

A substrate processing apparatus includes: a first processing chamber; a second processing chamber; a transfer chamber; a frame structure; and an elevating part. Each of the first and the second processing chamber has a main body part and a lid part. ... Tokyo Electron Limited

03/26/15 / #20150084772

System for monitoring failure of substrate processing apparatus, and method for monitoring failure of substrate processing apparatus

Disclosed is a failure monitoring system for monitoring a failure of a substrate processing apparatus that performs a predetermined processing on a substrate to be processed, the failure monitoring system including: an alarm collecting unit configured to collects alarms issued from the substrate processing apparatus; and an analyzing unit configured to analyze the alarms collected by the alarm collecting unit and display, as an image, an alarm issuing frequency in each monitoring period on a two-dimensional space, of which one axis represents an alarm id that specifies an alarm issuing area and another axis represents a predetermined monitor period.. . ... Tokyo Electron Limited

03/26/15 / #20150083943

Quadruple ram bop

A blowout preventer having a body, a main bore in the body, and rams that project into the main bore. The rams can be shear rams for shearing a tubular in the main bore, pipe rains for sealing around a tubular in the main bore, or sealing rams that seal across the main bore. ... Tokyo Electron Limited

03/26/15 / #20150083580

Plasma processing method

A method includes: etching a target layer of a target object in a processing chamber by generating a plasma of a first gas containing at least one of sf6, clf3 and f2 supplied into the processing chamber to; and forming a protective film on the target layer by generating a plasma of a second gas containing at least one of hydrocarbon, fluorocarbon, and fluorohydrocarbon supplied into the processing chamber. In the etching, a pressure in the processing chamber is set to a first pressure and a first bias power is applied to a lower electrode. ... Tokyo Electron Limited

03/26/15 / #20150083333

Plasma processor and plasma processing method

An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer w provided on a lower electrode 4. The plasma processor is provided with an electric potential control dc power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a dc voltage of, e.g., −400 to −600 v to control the electric potential of the focus ring 9. ... Tokyo Electron Limited

03/26/15 / #20150083332

Plasma processor and plasma processing method

An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer w provided on a lower electrode 4. The plasma processor is provided with an electric potential control dc power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a dc voltage of e.g., −400 to −600 v to control the electric potential of the focus ring 9. ... Tokyo Electron Limited

03/19/15 / #20150079808

Method of manufacturing a silicon oxide film

A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. ... Tokyo Electron Limited

03/19/15 / #20150079807

Method of manufacturing a silicon oxide film

A method of manufacturing a silicon oxide film by using a film deposition apparatus is provided. The apparatus includes a turntable including a substrate receiving part on its upper surface, a first gas supply part to supply a first gas to the turntable in a first process area, and a second gas supply part arranged in a second process area apart from the first process area to supply a second gas. ... Tokyo Electron Limited

03/19/15 / #20150079801

Oxide etching method

An oxide etching method includes loading an object to be processed, on a surface of which a patterned silicon oxide film is formed, in a chamber, supplying hf gas and nh3 gas as reactant gases and a diluent gas to the chamber to conduct a reaction treatment in which the hf gas and the nh3 gas are reacted with the silicon oxide film. Thereafter, a heating process is performed to remove a reaction product generated by the reaction treatment. ... Tokyo Electron Limited

03/19/15 / #20150079790

Semiconductor device manufacturing method

This semiconductor device manufacturing method is provided with: a film-forming step wherein a silicon nitride layer or a silicon oxide layer is formed such that a side wall portion of a silicon-containing layer, which is formed on a substrate and patterned, is covered with the silicon nitride layer or the silicon oxide layer; and a plasma etching step wherein the silicon-containing layer is selectively removed, and the silicon nitride layer or the silicon oxide layer formed on the side wall portion is left. In the plasma etching step, an etching gas containing sf6 gas is used.. ... Tokyo Electron Limited

03/19/15 / #20150079785

Plating method, plating system and storage medium

A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2a on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2a of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. ... Tokyo Electron Limited

03/19/15 / #20150078870

Bottle change apparatus, substrate treatment apparatus, bottle change method, bottle cap, bottle cap change apparatus and bottle cap change method

A bottle change apparatus includes a change mechanism that changes a bottle, and the bottle includes a bottle cap. The bottle cap includes: a treatment solution straw part that forms a treatment solution flow passage for supplying a treatment solution in the bottle to an outside of the bottle and extends to an inside of the bottle; and a treatment solution connecting part that is provided at an end portion outside the bottle of the treatment solution straw part. ... Tokyo Electron Limited

03/19/15 / #20150078864

Substrate processing apparatus and method for processing a substrate

A substrate processing apparatus is provided to deposit a film including a reaction product on a substrate by repeating a supply cycle of sequentially supplying at least two kinds of reaction gases reactable with each other to a surface of the substrate in a chamber. The substrate processing apparatus includes a turntable provided in the chamber and having a concave portion for receiving the substrate formed in its surface and through-holes formed in the concave portion, a lifting mechanism including lift pins used when transferring the substrate placed on the concave portion, and a control unit configured to control the lifting mechanism. ... Tokyo Electron Limited

03/19/15 / #20150078863

Conveyor

A transfer device configured by connecting a plurality of housing-shaped transfer units in series includes: a pair of coil arrays including a plurality of coils arranged in the transfer units along an arrangement direction of the transfer units; a transfer base disposed between the coil arrays; and a plurality of fitting parts installed in one to one correspondence with the coils, the fitting parts being interposed between the coils and inner wall surfaces of the transfer units, wherein the transfer base has magnets facing the coil arrays, a plurality of through holes are formed in one to one correspondence with the coils in each of the transfer units, each of the fitting parts has a bar-shaped protrusion configured to be inserted into a corresponding one of the through holes, and a sealing member is interposed between the protrusion and the corresponding one of the through holes.. . ... Tokyo Electron Limited

03/19/15 / #20150078416

Differential acoustic time of flight measurement of temperature of semiconductor substrates

Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. ... Tokyo Electron Limited

03/19/15 / #20150077727

Coating and developing apparatus, method of operating the same and storage medium

A coating and developing apparatus includes: first and second transfer mechanisms for transferring a substrate from a first mount module to a second mount module, one of the first and second transfer mechanisms being selected each time when the substrate transfer should be performed; first and second processing modules for performing substrate processing, for which the transfer of substrates is performed by the first and second transfer mechanisms, respectively; and a control unit. The control unit controls the transfer mechanisms for the substrate transfer by determining a delay time, representing a delay caused by the transfer of the substrate to the second mount module to the timing of transfer of a substrate from the first/second processing module, in regard to each of the first and second transfer mechanisms and selecting one of the first and second transfer mechanisms whose delay time is the shortest.. ... Tokyo Electron Limited

03/19/15 / #20150077726

Coating and developing apparatus, coating and developing method and storage medium

A coating and developing apparatus forms a coating film including a resist film on a substrate and performs developing on the substrate after exposure and a plurality of unit blocks performing the same processing each includes plural kinds of processing modules. A control unit outputs a control signal to perform preparing individual conveying schedules for the one substrate according to the condition when the one substrate distributed into unit blocks is conveyed in the unit blocks, respectively, obtaining a residence time until the one substrate is conveyed in each unit block and is then conveyed out; and conveying the one substrate in the unit block having the shortest residence time and conveying the substrate based on the individual conveying schedules.. ... Tokyo Electron Limited

03/19/15 / #20150077152

Substrate inspection apparatus

A substrate inspection apparatus can efficiently inspect electric characteristics of the semiconductor device. A prober 10 includes a probe card 15 having a multiple number of probe needles 17 to be brought into contact with electrodes of a semiconductor device formed on a wafer w; and a test box 14 electrically connected to the probe card 15. ... Tokyo Electron Limited

03/19/15 / #20150076707

Integrated circuit via structure and method of fabrication

A method for creating one or more vias in an integrated circuit structure and the integrated circuit structure. The method includes depositing a coating layer over a hard mask layer on the integrated circuit structure; locating an initial via pattern layer over the coating layer; and etching the pattern of the one or more initial openings in the coating layer and through openings in the hard mask layer. ... Tokyo Electron Limited

03/19/15 / #20150075971

Dual-target sputter deposition with controlled phase difference between target powers

System and method of insulating film deposition. A sputter deposition chamber comprises a pair of targets made of the same insulating material. ... Tokyo Electron Limited

03/19/15 / #20150075748

Substrate temperature regulating device and substrate processing apparatus using the same

Provided is a device for regulating a temperature of a substrate within a chamber of a substrate processing apparatus, which includes: a mounting stand configured to mount the substrate thereon and including a temperature regulating medium flow path formed therein; a substrate elevating mechanism configured to move the substrate up and down between a first position and a second position; a first temperature regulating unit configured to supply a temperature regulating medium to the flow path and configured to regulate the temperature of the substrate to a first temperature in the first position; a second temperature regulating unit installed below the mounting stand and configured to regulate the substrate to a second temperature by emitting light toward the substrate in the second position and heating the substrate; and a light transmitting window configured to transmit the light emitted from the second temperature regulating unit.. . ... Tokyo Electron Limited

03/19/15 / #20150075566

Method of controlling adherence of microparticles to substrate to be processed, and processing apparatus

A method of controlling adherence of microparticles to a substrate to be processed includes applying voltage to an electrostatic chuck configured to electrostatically attract the substrate to be processed in a processing container before the substrate to be processed is carried into the processing container; and, after the applying of voltage to the electrostatic chuck, carrying the substrate to be processed into the processing container. Further, in the applying of voltage to the electrostatic chuck, the voltage is applied to the electrostatic chuck to reduce a potential difference between a focus ring and the substrate to be processed, the focus ring being provided to surround the electrostatic chuck.. ... Tokyo Electron Limited

03/12/15 / #20150072536

Pattern forming method, pattern forming apparatus, and non-transitory computer-readable storage medium

A photoresist pattern used for forming a pattern of a block copolymer is formed on a substrate, and then an acid solution is supplied and an alkaline solution is further supplied to the photoresist pattern so as to slim and smooth the photoresist pattern. A block copolymer solution is applied to the substrate on which the smoothed photoresist pattern has been formed, to form a film of the block copolymer, and the film is heated.. ... Tokyo Electron Limited

03/12/15 / #20150072534

Etching method of multilayer film

A plasma processing apparatus for performing a plasma process on a substrate includes: a mounting table configured to mount thereon the substrate; an electromagnet including a core member and a plurality of coils; a current source connected to both ends of the coils for supplying currents to the coils; and a control unit configured to control the current source to start or stop and to control a current value of the current source. The core member is made of a magnetic material and has a structure including a column-shaped member, multiple cylindrical members, and a base member. ... Tokyo Electron Limited

03/12/15 / #20150072533

Etching method, etching apparatus, and storage medium

Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. ... Tokyo Electron Limited

03/12/15 / #20150072510

Method for forming ultra-shallow boron doping regions by solid phase diffusion

A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ald), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of a boron amide precursor and a reactant gas. ... Tokyo Electron Limited

03/12/15 / #20150072075

Film-forming apparatus and film-forming method

A film-forming apparatus includes an aerosol generation device which generates an aerosol including a solution of a film-forming material dispersed in a carrier gas, a chamber which vaporizes the aerosol such that fine particles of the film-forming material are generated from the aerosol that is generated by the aerosol generation device, a nozzle which discharges the fine particles generated by the chamber toward a substrate, and a moving mechanism which executes relative movement of the nozzle and the substrate along a surface of the substrate. The nozzle has a discharge port which discharges the fine particles to a slit-shaped region extending in a direction orthogonal to a moving direction of the relative movement between the nozzle and the substrate executed by the moving mechanism.. ... Tokyo Electron Limited

03/12/15 / #20150069910

Plasma processing method and plasma processing apparatus

A plasma processing apparatus includes a processing chamber; a conductive base within the processing chamber; an electrostatic chuck, having an electrode, provided on the base; a high frequency power supply that applies a high frequency power to the base; a first dc power supply that applies a dc voltage to the electrostatic chuck; and a plasma generation unit that generates plasma of a processing gas within the processing chamber. A plasma processing method performed in the plasma processing apparatus includes connecting the first dc power supply to the electrode of the electrostatic chuck; cutting off connection between the first dc power supply and the electrode of the electrostatic chuck; and generating the plasma within the processing chamber by applying the high frequency power to the base in a state that the connection between the first dc power supply and the electrode of the electrostatic chuck is cut off.. ... Tokyo Electron Limited

03/05/15 / #20150064926

Plasma processing method

A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain si and n, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. ... Tokyo Electron Limited

03/05/15 / #20150064925

Deposit removing method and gas processing apparatus

A deposit removing method includes an exposing process of heating and exposing a substrate to oxygen plasma; and a cycle process in which the substrate is exposed to an atmosphere of a mixture gas of a hydrogen fluoride gas and an alcohol gas, and a first period during which a total pressure of the mixture gas or a partial pressure of the alcohol gas is set to be a first total pressure or a first partial pressure and a second period during which the total pressure or the partial pressure is set to be a second total pressure lower than the first total pressure or a second partial pressure lower than the first partial pressure are repeated multiple cycles. A supply amount of the mixture gas from a first region including a central portion of the substrate is larger than that from a second region outside the first region.. ... Tokyo Electron Limited

03/05/15 / #20150064924

Method for etching organic film and plasma etching device

In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing cos gas and o2 gas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film.. ... Tokyo Electron Limited

03/05/15 / #20150064923

Plasma processing device and plasma processing method

A plasma processing device includes a processing chamber defining a plasma processing space and a stage for mounting thereon a target substrate in the processing chamber. The plasma processing device further includes a gas supply mechanism for introducing a processing gas into the plasma processing space, a plasma generation mechanism for supplying electromagnetic energy into the plasma processing space, and a control unit configured to, if a command to start a plasma process for the target substrate mounted on a substrate carry-in stage is issued, perform a warm-up process for supplying the processing gas into the plasma processing space by the gas supply mechanism and supplying the electromagnetic energy by the plasma generation mechanism in a state where no target substrate is mounted on the stage.. ... Tokyo Electron Limited

03/05/15 / #20150064922

Method of selectively removing a region formed of silicon oxide and plasma processing apparatus

Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed of silicon. The method performs a plurality of sequences. ... Tokyo Electron Limited

03/05/15 / #20150064918

Method for laterally trimming a hardmask

Techniques herein include methods for controllable lateral etching of dielectrics in polymerizing fluorocarbon plasmas. Methods can include dielectric stack etching that uses a mask trimming step as part of a silicon etching process. ... Tokyo Electron Limited

03/05/15 / #20150064917

Uv-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly

A processing method is disclosed that enables an improved directed self-assembly (dsa) processing scheme by allowing the formation of improved guide strips in the dsa template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. ... Tokyo Electron Limited

03/05/15 / #20150064911

Substrate processing method, substrate processing apparatus and storage medium

Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.. ... Tokyo Electron Limited

03/05/15 / #20150064910

Substrate processing method, substrate processing system and memory medium

A substrate processing method includes supplying onto a substrate a processing liquid which contains a volatile component and forms a film, vaporizing the volatile component in the processing liquid such that the processing liquid solidifies or cures on the substrate and forms a film on the substrate, and supplying onto the film formed on the substrate a removing liquid which removes the processing liquid. The processing liquid is supplied onto the substrate after dry etching or ashing is applied to the substrate.. ... Tokyo Electron Limited

03/05/15 / #20150063955

Load port device and substrate processing apparatus

A load port device transfers a semiconductor wafer between a substrate processing apparatus and a container accommodating the semiconductor wafer. The load port device includes: a door for opening and closing the opening from the inside of the substrate processing apparatus, and attaching and detaching a lid of the container to and from the container while holding the lid; a door driving unit for driving the door to open and close the opening; and an elastic body disposed at a surface of the door to correct inclination of the door with respect to an opening surface of the container when the lid held by the door is attached to the container and receives a reactive force from the semiconductor wafer in the container.. ... Tokyo Electron Limited

03/05/15 / #20150062545

Pattern forming method, pattern forming apparatus, and computer readable storage medium

The present invention is a pattern forming method of forming a pattern on a substrate using a block copolymer, the pattern forming method including the steps of: forming a film of a block copolymer containing at least two kinds of polymers on the substrate; heating the film of the block copolymer; irradiating the heated film of the block copolymer with ultraviolet light in an atmosphere of an inert gas; and supplying an organic solvent to the film of the block copolymer irradiated with the ultraviolet light.. . ... Tokyo Electron Limited

03/05/15 / #20150059985

Bonding system

An object of the present disclosure is to reduce a footprint. A bonding system of the present disclosure includes a first processing station, a second processing station, and a carry-in/out station. ... Tokyo Electron Limited

03/05/15 / #20150059859

Apparatus for dividing and supplying gas and method for dividing and supplying gas

An apparatus for dividing and supplying gas is provided with a flow rate control device, a plurality of divided flow passages of gas flowing from the flow rate control device, thermal-type mass flow sensors disposed to the divided flow passages, electrically-operated valves disposed on a downstream side of the thermal-type mass flow sensors, controllers that control the electrically-operated valves, and a flow ratio setting calculator that calculates a total flow rate, then calculates flow rates of the divided flow passages, and then inputs the calculated flow rates as set flow rates to each controllers. One of the divided flow passages with the highest set flow rate is put in an uncontrolled state, and opening degree for each of the rest divided flow passages is controlled, and then feedback control of the divided flow rate of each of the divided flow passages is implemented by each of the controllers.. ... Tokyo Electron Limited

03/05/15 / #20150059644

Coating film forming apparatus

A coating film forming apparatus includes: a coating nozzle; a horizontal moving mechanism that relatively moves a substrate and the coating nozzle; a pressure regulating mechanism that regulates a pressure inside the coating nozzle; and a controller that changes an amount of the coating solution to be supplied from the coating nozzle, wherein the coating nozzle includes: a discharge port that is formed long in a direction perpendicular to a direction of the relative movement with respect to the substrate; and a storage chamber that communicates with the discharge port and stores the coating solution therein, and wherein while the coating solution is applied to the substrate, the pressure regulating mechanism is controlled according to a change in width of the substrate, to regulate the pressure inside the storage chamber to thereby change a discharge amount per unit time of the coating solution to be discharged.. . ... Tokyo Electron Limited

02/26/15 / #20150056817

Semiconductor device manufacturing method

A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method mt includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber 12 (st2); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (st3), and a cycle including the exciting of the first gas (st2) and the exciting of the second gas (st3) is repeated multiple times.. ... Tokyo Electron Limited

02/26/15 / #20150056816

Semiconductor device manufacturing method and computer-readable storage medium

A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative dc voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film.. ... Tokyo Electron Limited

02/26/15 / #20150056808

Method of etching silicon oxide film

Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. ... Tokyo Electron Limited

02/26/15 / #20150056791

Depression filling method and processing apparatus

A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. ... Tokyo Electron Limited

02/26/15 / #20150056773

Semiconductor device manufacturing method

A semiconductor device manufacturing method includes exciting a processing gas containing a hbr gas and a cl2 gas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The cl2 gas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the hbr gas in the processing gas.. ... Tokyo Electron Limited

02/26/15 / #20150056385

Copper wiring structure forming method

In a cu wiring structure forming method, a barrier film serving as a cu diffusion barrier is formed at least on a surface of a recess in a first insulating film formed on a substrate, and the recess is filled with an al-containing cu film. A cu wiring is formed from the al-containing cu film, and a cap layer including a ru film is formed on the cu wiring. ... Tokyo Electron Limited

02/26/15 / #20150056381

Method for forming conductive film

A method for forming a conductive film on a substrate includes forming a precursor-containing film on the substrate; and irradiating plasma of a treatment gas to the precursor-containing film by an atmospheric pressure plasma treatment device, removing the organic substances and forming a conductive film from the metallic fine particles or the metallic compounds, the atmospheric pressure plasma treatment device including: a microwave generator, a hollow waveguide, a gas supply device, and an antenna portion configured to discharge to the outside, whereby the treatment gas being converted to plasma by the microwaves, the plasma thus generated being irradiated to the precursor-containing film on the substrate, and a hydrogen radical density of the plasma at a position spaced apart 7 mm from the slot holes being equal to or higher than 2×1014/cm3.. . ... Tokyo Electron Limited

02/26/15 / #20150055754

X-ray inspection method and x-ray inspection device

An x-ray inspection method which is capable of measuring a shape of an inspection object at a high speed in a non-destructive manner is provided. The x-ray inspection method includes: a simulation image generating process of generating simulation images of a plurality of transmission images having different shape parameters of an inspection object; an x-ray imaging process of capturing an x-ray transmission image transmitting the inspection object; and a shape estimating process of estimating a shape parameter of a simulation image whose evaluation value indicating a similarity with the x-ray transmission image satisfies predetermined conditions among the plurality of simulation images, as a shape of the inspection object.. ... Tokyo Electron Limited

02/26/15 / #20150053348

Plasma processing apparatus

A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.. . ... Tokyo Electron Limited

02/26/15 / #20150053346

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. ... Tokyo Electron Limited

02/26/15 / #20150053329

Method of manufacturing thermal insulation wall body

A method of manufacturing a cylindrical thermal insulation wall body having a holding unit of a heater element formed in an inner peripheral surface includes processing a plate-shaped thermal insulation member such that a plurality of groove portions are formed at a predetermined pitch, processing the thermal insulation member such that an angle between either of the first surface and the second surface, and a third surface on which the groove portions are formed, is 90+180/n degrees, and manufacturing the cylindrical thermal insulation wall body by bonding a plurality of sectional thermal insulation members, wherein the plurality of sectional thermal insulation members are bonded such that the groove portions of the adjacent sectional thermal insulation members are aligned with each other and to form the holding unit in the inner peripheral surface of the cylindrical thermal insulation wall body.. . ... Tokyo Electron Limited

02/26/15 / #20150053285

Liquid processing apparatus

A liquid processing apparatus includes a first line to which a processing liquid pressurized by a pump is sent from a processing liquid supply source; a plurality of second lines into which the pressurized processing liquid flowing through the first line flows; a branch line connected to a branch point on each of the second lines; a liquid processing unit configured to process a substrate with the processing liquid; an orifice provided at an upstream side of the branch point; and a first control valve provided at a downstream side of the branch point. The first control valve changes an amount of the processing liquid flowing to a downstream side of the first control valve to control a pressure of the processing liquid in a section between the orifice of the second line and the first control valve, and to control a flow rate of the processing liquid.. ... Tokyo Electron Limited

02/26/15 / #20150052702

Substrate cleaning apparatus

A substrate cleaning apparatus for removing particles adhered to a substrate includes a cleaning chamber for cleaning a substrate under a vacuum atmosphere, a mounting unit, provided in the cleaning chamber, for mounting the substrate thereon. The substrate cleaning apparatus further includes a nozzle unit for injecting a cleaning gas from an area of a higher pressure than an atmosphere in which the substrate is mounted toward the substrate in the cleaning chamber, generating a gas cluster as an aggregate of atoms or molecules of the cleaning gas by adiabatic expansion and irradiating the gas cluster to the substrate in a direction perpendicular thereto, a gas exhaust port for evacuating the cleaning chamber, and a moving unit for relatively moving the mounting unit and the nozzle unit.. ... Tokyo Electron Limited

02/19/15 / #20150051871

Evaluation device, semiconductor manufacturing apparatus, control device, and recording medium

Provided is a device of evaluating a semiconductor manufacturing apparatus in which flow rate control units are installed in flow paths through which gas supplied from gas supply sources flows, and an operation of each flow rate control unit is controlled according to time-serially defined process conditions to adjust a supply operation of gas in a semiconductor manufacturing process. The device includes: a storage unit to store layouts of the flow rate control units; an obtaining unit configured to obtain information of the process conditions at an instant of time; a specifying unit configured to specify an operational state of each flow rate control unit based on the information of the process conditions; and a determination unit configured to determine an internal gas state of a flow path arranged over upstream and downstream sides of each flow rate control unit based on the specified operational state and the layouts.. ... Tokyo Electron Limited

02/19/15 / #20150050750

Plasma processing method and plasma processing apparatus

A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space s is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain cofeb, the first processing gas contains cl2, and the second processing gas contains h2.. ... Tokyo Electron Limited

02/19/15 / #20150048049

Method and apparatus for forming a periodic pattern using a self-assembled block copolymer

A method for causing a first polymer and a second polymer of a block copolymer to be self-assembled on an underlayer film and forming a periodic pattern in a guide layer is provided. The method includes a first etching process of etching the second polymer by plasma generated from a first gas, a first film deposition process of depositing a first protective film on surfaces of the first polymer and the guide layer except for an etched portion of the second polymer by plasma generated from a second gas after the first etching process, and a second etching process of further etching the second polymer by the plasma generated from the first gas after the first film deposition process.. ... Tokyo Electron Limited

02/19/15 / #20150047974

Plasma processing apparatus and high frequency generator

A plasma processing apparatus (11) is provided with: a processing container (12), in which processing is performed using plasma; a plasma generating mechanism (19), which has a high frequency oscillator that oscillates high frequency, includes a high frequency generator that generates high frequency by being disposed outside of the processing container (12), and which generates plasma in the processing container (12) using the high frequency generated by means of the high frequency generator; a determining mechanism, which determines the state of the high frequency oscillator; and a notifying mechanism, which performs notification of determination results obtained from the determining mechanism.. . ... Tokyo Electron Limited

02/19/15 / #20150047567

Film-forming apparatus

A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. ... Tokyo Electron Limited

02/19/15 / #20150047565

Trap mechanism, exhaust system, and film formation device

A trap mechanism is provided in the middle of an exhaust passage through which an exhaust gas, which is exhausted from a film formation device body that forms a thin film on the surface of a workpiece (w), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism includes: a housing having a gas inlet and a gas outlet; a partitioning member that partitions the inside of the housing into retention spaces; communication paths that communicate the retention spaces with one another; and cooling jackets that cool the communication paths to cool the exhaust gas. ... Tokyo Electron Limited

02/12/15 / #20150045942

Group management system and recording medium

There is provided a group management system including one or more manufacturing devices and one or more server devices. Each of the manufacturing devices includes a manufacturing device display unit configured to display information on the specified process, an acquiring unit configured to acquire information of respective parts of each of the manufacturing devices and an acquired information transmitting unit configured to transmit the acquired information to the server devices. ... Tokyo Electron Limited

02/12/15 / #20150044877

Etching method

An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. ... Tokyo Electron Limited

02/12/15 / #20150044785

Substrate backside texturing

Embodiments described relate to a method and apparatus for reducing lithographic distortion. A backside of a semiconductor substrate may be texturized. ... Tokyo Electron Limited

02/12/15 / #20150044390

Method of cleaning the filament and reactor's interior in facvd

A method of operating a filament assisted chemical vapor deposition (facvd) system. The method includes depositing a film on a substrate in a reactor of the facvd system. ... Tokyo Electron Limited

02/12/15 / #20150044368

Placing table structure

Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table.. ... Tokyo Electron Limited

02/12/15 / #20150041432

Self-sustained non-ambipolar direct current (dc) plasma at low power

A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. ... Tokyo Electron Limited

02/12/15 / #20150040950

Purging apparatus and purging method for substrate storage container

Provided is a purging apparatus including an upper nozzle provided above an opening of the substrate storage container and configured to supply a dry gas obliquely downwardly to a side opposite to the substrate storage container and over the entire surface of the width of the opening; and a plurality of side nozzles provided at both sides of the opening of the substrate, respectively, and each configured to supply a dry gas towards the inside of the substrate storage container from an outside of the opening. The side nozzles are each longer than a height of the opening and formed with a plurality of supply holes supplying the dry gas at predetermined intervals in a vertical direction. ... Tokyo Electron Limited

02/12/15 / #20150040828

Substrate processing system

A substrate processing system for sequentially processing substrates includes processing chambers, a transfer unit, and a control unit controlling the processing chambers and the transfer unit. The control unit includes a transfer control unit controlling an operation of the transfer unit, a transfer order setting unit setting a transfer order of substrates to the processing chambers, an accumulation unit for accumulating a film thickness of a formed thin film or the number of processed substrates after completion of previous cleaning or previous pre-coating in the processing chambers, a processing chamber priority determination unit for determining priority of processing the substrates in the processing chambers based on predetermined rules, and an execution instruction unit for executing conditioning in the processing chambers. ... Tokyo Electron Limited

02/05/15 / #20150037982

Semiconductor device manufacturing method

In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. ... Tokyo Electron Limited

02/05/15 / #20150037975

Method and apparatus for forming silicon film

Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer.. . ... Tokyo Electron Limited

02/05/15 / #20150037970

Silicon film forming method, thin film forming method and cross-sectional shape control method

The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees c. Or lower and a room temperature or higher.. ... Tokyo Electron Limited

02/05/15 / #20150037911

Substrate treatment apparatus, substrate treatment method, and non-transitory storage medium

A substrate treatment apparatus configured such that substrates in a same lot are distributed by a delivery mechanism into a plurality of unit blocks, each unit block including a solution treatment module, an ultraviolet irradiation module, and a substrate carrying mechanism, the apparatus includes: an illuminance detection part that detects an illuminance of a light source of the ultraviolet irradiation module; and a control part that controls, when an illuminance detection value of the ultraviolet irradiation module in one unit block among the plurality of unit blocks becomes a set value or less, the delivery mechanism to stop delivery of a substrate to the one unit block and deliver subsequent substrates to another unit block, and the ultraviolet irradiation module to perform irradiation on substrates which have already been delivered to the one unit block with an irradiation time adjusted to a length according to the illuminance detection value.. . ... Tokyo Electron Limited

02/05/15 / #20150036110

Developing apparatus, developing method and storage medium

A developing apparatus includes: a substrate holder that hold a substrate horizontally; a developer nozzle that supplies a developer onto the substrate to form a liquid puddle; a turning flow generation mechanism including a rotary member that rotates about an axis perpendicular to the substrate while the rotary member is being in contact with the liquid puddle thereby to generate a turning flow in the liquid puddle of the developer formed on the substrate; and a moving mechanism for moving the turning flow generation mechanism along a surface of the substrate. The line-width uniformity of a pattern can be improved by forming turning flows in a desired region of the substrate and stirring the developer.. ... Tokyo Electron Limited

02/05/15 / #20150036109

Developing method, developing apparatus and storage medium

A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. ... Tokyo Electron Limited

01/29/15 / #20150032246

Energy-consumption monitoring system for substrate processing apparatus and energy-consumption monitoring method for substrate processing apparatus

An energy-consumption monitoring system for a substrate processing apparatus includes a data collection device which collects process implementation data of a process to be executed according to each recipe in a substrate processing apparatus, a memory device which stores energy consumption data that indicate relationship between an individual energy-consuming event in the process and an amount of energy consumed per unit time by the individual energy-consuming event, and a computation device which detects an occurrence of the individual energy-consuming event and virtually calculate a cumulative energy consumption based on a duration of the individual energy-consuming event and the energy consumption data of the individual energy-consuming event stored in the memory device.. . ... Tokyo Electron Limited

01/29/15 / #20150031218

Film forming process and film forming apparatus

In a film forming apparatus (10), plasma-assisted ald sequences are carried out to form a nitride film on a substrate (w) through the nitration of the silicon (si) resulting from dichlorosilane (dcs), and then the first to fourth gas-feeding processes and plasma-feeding processes are successively carried out as plasma-assisted post-treatment. The gas to be fed in the first to fourth gas-feeding processes in the plasma-assisted post-treatment is a modifier gas consisting of either a gas selected from among n2, nh3, ar and h2 or a mixed gas obtained by suitably mixing some of these gases. ... Tokyo Electron Limited

01/29/15 / #20150031214

Chemical fluid processing apparatus and chemical fluid processing method

A chemical fluid processing apparatus and a chemical fluid processing method are described, to treat a substrate with a plurality of chemical fluids such that substantially constant temperature is maintained across a substrate surface. The apparatus includes a discharge nozzle above the substrate to supply a first chemical fluid at a first temperature to a front surface of the substrate, a bar nozzle oriented in a radial direction of the substrate to supply a second chemical fluid at a second temperature to the front surface or a back surface of the substrate, the second temperature being higher than the first temperature, and where the bar nozzle includes a plurality of outlets for discharging the second chemical fluid to a plurality of contacting places on the front surface or the back surface of the substrate at different distances from the center of the substrate.. ... Tokyo Electron Limited

01/29/15 / #20150031204

Method of depositing film

A method of depositing a film is provided. In the method, one operation of a unit of film deposition process is performed by carrying a substrate into a processing chamber, by depositing a nitride film on the substrate, and by carrying the substrate out of the processing chamber after finishing depositing the nitride film on the substrate. ... Tokyo Electron Limited

01/29/15 / #20150030774

Plating method, plating system and storage medium

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. ... Tokyo Electron Limited

01/29/15 / #20150028962

Radio frequency signal splitter and matcher

This application relates to systems and methods for splitting a current signal into at least two signals that are out of phase with each other. The power splitter may include a conductive element that may generate standing magnetic field that alternates at specified frequency. ... Tokyo Electron Limited

01/29/15 / #20150028907

Probe apparatus

A probe apparatus of inspecting electrical characteristics of a power device having electrodes on both sides of a substrate at wafer level can reduce and uniformize a contact resistance between the electrode on a rear surface of the substrate and a mounting surface conductor of a chuck top. In the probe apparatus, an attracting device supports a semiconductor wafer w on the chuck top 12, and has many vertical fine holes in a pattern (diameter φ and pitch p) that satisfies the condition of φ<p≦2φ. ... Tokyo Electron Limited

01/29/15 / #20150027638

Substrate processing apparatus, substrate processing method and storage medium

A substrate processing unit 14 includes processing modules 2 each performing a process on a substrate, and a substrate transfer device 121 is provided between a mounting unit 11 and the processing modules. A parameter storage unit 3 stores sets of transfer parameter 33 where an operating speed of the substrate transfer device corresponds to a processing number of substrates per a unit time. ... Tokyo Electron Limited

01/29/15 / #20150027637

Plasma processing apparatus

Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). ... Tokyo Electron Limited

01/29/15 / #20150027635

Plasma processing apparatus

A plasma processing apparatus of exciting a processing gas into plasma by applying a high frequency power between an upper electrode and a lower electrode provided within a processing chamber and performing a plasma process on a target object to be processed with the plasma includes a dc power supply configured to apply a dc voltage to the upper electrode; a ground electrode connected to the dc power supply; and an annular shield member provided outside the ground electrode. A groove is formed into a downward recess at an outer peripheral portion of the ground electrode, and an upper end of the shield member is positioned above an upper end of the peripheral portion of the ground electrode. ... Tokyo Electron Limited

01/29/15 / #20150027503

Liquid processing apparatus

A liquid processing apparatus for performing liquid processing with respect to a substrate using processing fluid, includes: a plurality of substrate holding units arranged side by side in a left-right direction; a nozzle configured to supply the processing fluid to the substrate held in each of the substrate holding units; and a nozzle moving mechanism configured to move the nozzle forward and backward in a front-rear direction intersecting an arrangement direction of the substrate holding units between a supplying position in which the processing fluid is supplied to a region including a central portion of the substrate and a waiting position which is defined at a rear side of a row of the substrate holding units opposite to a front side of the row of the substrate holding units at which the substrate is loaded and unloaded.. . ... Tokyo Electron Limited

01/29/15 / #20150027501

Substrate cleaning method and substrate cleaning apparatus

In order to remove the particles attached to the wafer w, the distance between a front end of a nozzle unit 4 and the wafer w is set to be in a range of from about 10 mm to about 100 mm, a pressure within a cleaning chamber 31 is set to be an adequate level, and then, a gas cluster is irradiated to a surface of the wafer w. Therefore, the particles are rapidly removed with high efficiency. ... Tokyo Electron Limited

01/29/15 / #20150027492

Substrate cleaning apparatus, substrate cleaning method, and storage medium

There are provided first and second cleaning members which are configured to clean a central zone in a rear surface of a wafer when the wafer held by an absorption pad is horizontally held, and configured to clean a peripheral zone in the rear surface of the wafer when the wafer is held by the spin chuck. Due to the provision of the first and second cleaning members, detergency can be improved as compared with a case in which only one cleaning member is used. ... Tokyo Electron Limited

01/22/15 / #20150024603

Plasma etching method and plasma etching apparatus

In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of o2, cf4 and hbr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of o2 and cf4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.. ... Tokyo Electron Limited

01/22/15 / #20150024143

Film deposition apparatus, film deposition method, and computer readable storage medium

In a disclosed film deposition method, after a film deposition—alteration step is carried out that includes a film deposition process where a si containing gas is adsorbed on a wafer w and the adsorbed si containing gas on the wafer is oxidized by supplying an o3 gas to the upper surface of the wafer, thereby producing a silicon oxide layer(s) by rotating a turntable on which the wafer is placed, and an alteration process where the silicon oxide layer(s) is altered by plasma, an alteration step where the silicon oxide layer(s) is altered by plasma while the si containing gas is not supplied.. . ... Tokyo Electron Limited

01/22/15 / #20150022086

Plasma processing apparatus, abnormal oscillation determination method and high-frequency generator

Disclosed is a plasma processing apparatus including: a processing container; a plasma generating mechanism including a high-frequency oscillator, and configured to generate plasma within the processing container by using a high frequency wave oscillated by the high-frequency oscillator; an impedance regulator configured to adjust impedance to be applied to the high-frequency oscillator; and a determining unit configured to change the impedance to be adjusted by the impedance regulator and to determine an abnormal oscillation of the high-frequency oscillator based on a component of a center frequency of a fundamental wave that is the high frequency wave oscillated by the high-frequency oscillator, and a component of a peripheral frequency present at both ends of a predetermined frequency band centered around the center frequency of the fundamental wave in a state where the impedance is changed.. . ... Tokyo Electron Limited

01/22/15 / #20150021775

Method for manufacturing semiconductor device, semiconductor device, and apparatus for producing semiconductor

A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.. . ... Tokyo Electron Limited

01/15/15 / #20150017813

Semiconductor device manufacturing method and substrate treatment system

A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees c. Or less is provided. ... Tokyo Electron Limited

01/15/15 / #20150017811

Method for processing base body to be processed

An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing ni and si and a second layer containing si and n which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.. ... Tokyo Electron Limited

01/15/15 / #20150017782

Bonding device and bonding method

A bonding device for bonding substrates together, includes: a first holding unit configured to hold a first substrate on a lower surface thereof; a second holding unit located below the first holding unit and configured to hold a second substrate on an upper surface thereof; a moving mechanism configured to move the first holding unit or the second holding unit in a horizontal direction and a vertical direction; a first image pickup unit located in the first holding unit and configured to pick up an image of the second substrate held in the second holding unit; and a second image pickup unit located in the second holding unit and configured to pick up an image of the first substrate held in the first holding unit, at least one of the first image pickup unit and the second image pickup unit including an infrared camera.. . ... Tokyo Electron Limited

01/15/15 / #20150016936

Substrate transfer method and device

A substrate transfer method includes: a step of placing a first and a second substrate on a first and a second alignment part which are arranged to be vertically spaced from each other by using a first and a second pick. The method further includes a first positioning step of positioning the first pick at a first reception position determined based on an alignment position for the first substrate; a first receiving step of receiving the first substrate from the first alignment part by moving the first pick. ... Tokyo Electron Limited

01/15/15 / #20150015285

Probe apparatus

A probe apparatus can suppress a spark from occurring near a wafer surface simply and efficiently when inspecting electrical characteristics of a semiconductor device at wafer level. A spark preventing device 50 mounted in the probe apparatus includes a surrounding member 52 which surrounds probe needles 24g and 24s between a probe card 16 and a mounting table 12; and a gas supply device 54 configured to supply a gas to a vicinity of the probe needles 24g and 24s through an inside or a vicinity of the surrounding member 52 to form an atmosphere of a preset pressure higher than an atmospheric pressure in the vicinity of the probe needles 24g and 24s when inspecting the electrical characteristics of each chip on a semiconductor wafer w. ... Tokyo Electron Limited

01/15/15 / #20150015139

Microwave plasma processing apparatus and microwave supplying method

A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. ... Tokyo Electron Limited

01/15/15 / #20150014276

Plasma processing method

A plasma processing method for performing a plasma process on a processing target substrate is provided. The plasma processing method includes: segmenting a rf antenna into an inner coil, an intermediate coil, and an outer coil with gaps therebetween in a radial direction, respectively, the inner coil, the intermediate coil and the outer coil being electrically connected to one another in parallel between a first node and a second node; providing a variable intermediate capacitor and a variable outer capacitor between the first node and the second node, the variable intermediate capacitor being electrically connected in series to the intermediate coil, the variable outer capacitor being electrically connected in series to the outer coil, no reactance device being connected to the inner coil; and controlling plasma density distribution on the processing target substrate by selecting or variably adjusting electrostatic capacitances of the intermediate capacitor and the outer capacitor.. ... Tokyo Electron Limited

01/15/15 / #20150013938

Supporting member and substrate processing apparatus

A supporting member is configured to support at least one pipe connecting a temperature adjusting unit with a substrate processing apparatus, wherein the temperature adjusting unit adjusts a temperature of an arbitrary component of the substrate processing apparatus, wherein an inside of the supporting member includes a hollow portion and the at least one pipe is arranged in the hollow portion.. . ... Tokyo Electron Limited

01/15/15 / #20150013913

Microwave plasma processing apparatus

A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. ... Tokyo Electron Limited

01/15/15 / #20150013912

Microwave plasma processing apparatus, slot antenna, and semiconductor device

A microwave plasma processing apparatus includes an inner slow-wave plate installed above a first slot in an inner waveguide which transmits microwaves to the first slot by transmitting the microwaves in a center side space, which is positioned closer to the center than the convex portion in the space between the slot plate and the intermediate metal body, through the space between the inner conductor and the intermediate conductor. An outer slow-wave plate is installed above a second slot in an outer waveguide which transmits microwaves to the second slot by transmitting the microwaves in an outer periphery side space, which is positioned closer to an outer periphery than the convex portion in the space between the slot antenna plate and the intermediate metal body, sequentially through the space between the intermediate conductor and the outer conductor, and the space between the intermediate metal body and cooling plate.. ... Tokyo Electron Limited

01/15/15 / #20150013911

Microwave plasma processing apparatus, slot antenna, and semiconductor device

Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a coaxial waveguide installed in a through hole which is formed in the center side portion in the intermediate metal body to extend continuously through the cooling plate and the intermediate metal plate. ... Tokyo Electron Limited

01/15/15 / #20150013908

Etching apparatus

An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.. . ... Tokyo Electron Limited

01/15/15 / #20150013907

Microwave plasma processing apparatus, slot antenna, and semiconductor device

Disclosed is a microwave plasma processing apparatus. The microwave plasma processing apparatus includes a cooling plate. ... Tokyo Electron Limited

01/15/15 / #20150013722

Substrate processing system, method for controlling substrate processing system, and storage medium

Disclosed is a substrate processing system including a substrate processing apparatus that includes a nozzle configured to eject a processing liquid to a substrate. The system includes a jig sensor configured to detect whether a checking jig provided with a liquid receiving unit receiving the processing liquid ejected from the nozzle and configured to check an ejection state of the processing liquid from the nozzle is installed at a predetermined position of the substrate processing apparatus; and a controller configured to control the ejection of the processing liquid from the nozzle. ... Tokyo Electron Limited

01/15/15 / #20150013606

Film forming system

A film forming system includes: a treatment station that performs a predetermined treatment on a substrate; and a transfer-in/out station configured to retain a plurality of substrates and transfer the substrates in/out from/to the treatment station. The treatment station includes: a coating apparatus that applies a coating solution onto a front surface of the substrate to form a containing film; a thermal treatment apparatus that thermally treats the substrate on which the coating film has been formed; a grinding apparatus that grinds the coating film on the front surface of the substrate which has been thermally treated; a cleaning apparatus that cleans the substrate whose coating film has been ground; and a transfer region for transferring the substrate.. ... Tokyo Electron Limited

01/15/15 / #20150013602

Film forming system

A film forming system includes a grinding apparatus that grinds a coating film on a front surface of a substrate, a cleaning apparatus that cleans the substrate from which the coating film has been ground, and a transfer apparatus that transfers the substrate. The cleaning apparatus includes a front surface cleaning unit that cleans the front surface of the substrate, and a rear surface cleaning unit that cleans a rear surface of the substrate. ... Tokyo Electron Limited

01/08/15 / #20150012124

Maintenance system, and substrate processing device

The present disclosure provides a maintenance system, installed in a substrate processing device, is comprised of an equipment control unit, a sensor acquisition unit and determination unit and control signal generation unit. The equipment control unit operates the monitored equipment within the substrate processing device. ... Tokyo Electron Limited

01/08/15 / #20150011094

Manufacturing method of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus

A manufacturing method of a semiconductor manufacturing apparatus is provided for etching a multilayer film having a first film and a second film with differing dielectric constants alternatingly stacked on a substrate, and forming a hole with a predetermined shape in the multilayer film. The manufacturing method includes a first step of etching the multilayer film to a first depth using a gas mixture containing a cf based gas at a first flow rate and a bromine-containing gas, a chloride-containing gas, and/or an iodine-containing gas; a second step of etching the multilayer film to a second depth after the first step using a gas mixture containing the cf based gas at a second flow rate and the bromine-containing gas, the chloride-containing gas, and/or the iodine-containing gas; and a third step for over etching the multilayer film after the second step until the hole reaches a base layer.. ... Tokyo Electron Limited

01/08/15 / #20150011091

Substrate processing method and control apparatus

Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.. ... Tokyo Electron Limited

01/08/15 / #20150011087

Method of depositing film

A method of depositing a film is provided. In the method, a first process gas and a second process gas that react with each other is sequentially supplied to cause an atomic layer or a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a chamber by repeating a cycle of sequentially supplying the first process gas and the second process gas to the substrate once each cycle. ... Tokyo Electron Limited

01/08/15 / #20150007940

Plasma processing device and high-frequency generator

Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. ... Tokyo Electron Limited

01/08/15 / #20150007857

Cleaning method and substrate processing apparatus

A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.. . ... Tokyo Electron Limited

01/08/15 / #20150007774

Film formation device

A processing chamber accommodating a mounting table includes a first region and a second region. As the mounting table rotates, a substrate mounting region of the mounting table moves in a circumferential direction around the axis to pass through the first region and the second region. ... Tokyo Electron Limited

01/08/15 / #20150007772

Substrate processing apparatus

A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.. . ... Tokyo Electron Limited

01/01/15 / #20150005928

Substrate processing system and substrate position correction method

In step 1, a mapping operation is carried out by a mapping device. In step 2, based on position information for the wafer (w) detected by the mapping operation, it is determined whether or not a wafer (w) position is in an abnormal state or not. ... Tokyo Electron Limited

01/01/15 / #20150004803

Method for forming tin and storage medium

When forming a tin film to be formed as a metallic hard mask for etching a film formed on a substrate to be processed, a first step and a second step are repeated a plurality of times to form a tin film having reduced film stress. In the first step (step 1), the substrate to be processed is conveyed into a processing chamber, ticl4 gas and a nitriding gas are fed into the processing chamber, the interior of which being kept in a depressurized state during this time, and a plasma from the gases is generated to form a tin unit film. ... Tokyo Electron Limited

01/01/15 / #20150004795

Plasma etching method and plasma etching apparatus

A groove shape can be improved. A plasma etching method includes plasma-processing a photoresist film that is formed on a mask film and has a preset pattern; exposing an organic film formed under the mask film by etching the mask film with the pattern of the plasma-processed photoresist film; and etching the organic film by plasma of a mixture gas containing o2 (oxygen), cos (carbonyl sulfate) and cl2 (chlorine).. ... Tokyo Electron Limited

01/01/15 / #20150004794

Method of controlling temperature and plasma processing apparatus

A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. ... Tokyo Electron Limited

01/01/15 / #20150004784

Copper wiring forming method

Provided is a method of forming a copper (cu) wiring in a recess formed to have a predetermined pattern in an insulating film formed on a surface of a substrate. The method includes: forming a barrier film at least on a surface of the recess, the barrier film serving as a barrier for blocking diffusion of cu; forming a ru film on the barrier film by chemical mechanical deposition (cvd); forming a cu alloy film on the ru film by physical vapor deposition (pvd) to bury the recess; forming a cu wiring using the cu alloy film buried in the recess; and forming a dielectric film on the cu wiring.. ... Tokyo Electron Limited

01/01/15 / #20150004721

Plasma processing apparatus and plasma processing method

An oes measuring unit outputs a spectroscopically measured value for each step at the end of or immediately after each step. A cd estimating unit obtains an estimated cd value for each step using a cd estimation model and a spectroscopically measured value received from an estimation model storage unit. ... Tokyo Electron Limited

01/01/15 / #20150004332

Method of depositing a film, recording medium, and film deposition apparatus

A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.. . ... Tokyo Electron Limited

01/01/15 / #20150004311

Coating film forming apparatus, coating film forming method, and recording medium

A coating film forming apparatus includes: a substrate holding unit to horizontally hold a substrate; a rotating mechanism to rotate the substrate held by the substrate holding unit; a coating liquid supplying mechanism to supply coating liquid to form a coating film on the substrate; an annular member to rectify a gas stream above a periphery of the substrate when liquid film of the coating liquid is dried by rotation of the substrate, the annular member being provided above the periphery of the substrate and along a circumferential direction of the substrate so as to cover the periphery of the substrate; and a protrusion provided on an inner periphery of the annular member along circumferential direction of the annular member so as to protrude upward to reduce component of the gas stream flowing directly downward near an inner peripheral edge of the annular member.. . ... Tokyo Electron Limited

01/01/15 / #20150001588

Semiconductor device and method for manufacturing same

A trench 107 is coated and sealed with a cap film 111 from above an amorphous or polycrystalline inp film 109a buried in the trench 107. Next, a monocrystalline inp film 109b is formed by monocrystallizing the inp film 109a, with a si (001) plane of the bottom of the trench 107 as a seed crystal plane, by melting inp by heating a si wafer w at or above a melting point of inp and then solidifying inp by cooling inp.. ... Tokyo Electron Limited

01/01/15 / #20150001181

Plasma processing apparatus, plasma processing method, and storage medium

Provided is a parallel flat-panel type plasma processing apparatus which includes a recipe storing unit storing a processing recipe for performing a plasma processing, a compensation setting unit setting an accumulation time of the plasma processing or the number of processed substrates after starting using a new second electrode and the compensation value of the set temperature of the second electrode in an input screen, and a storage unit storing the compensated set value. The plasma processing apparatus is further equipped with a program for controlling a temperature adjusting mechanism based on a set temperature after compensation by adding a set temperature of an upper electrode written in the processing recipe to the compensation value stored within the storage unit. ... Tokyo Electron Limited

01/01/15 / #20150000843

Plasma etching apparatus and method

A plasma etching apparatus includes a first rf power supply unit configured to apply a first rf power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second rf power supply unit configured to apply a second rf power for ion attraction to the second electrode, and a controller configured to control the second rf power supply unit. The second rf power supply unit includes a second rf power supply and a second matching unit. ... Tokyo Electron Limited

01/01/15 / #20150000842

Power supply system, plasma etching apparatus, and plasma etching method

A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a dc power supply 91 that supplies a dc voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the dc power supply 91 including a first dc power supply unit 101 that supplies a first negative dc voltage v1, a second dc power supply unit 102 that supplies a second negative dc voltage v2 having a higher absolute value than the first negative dc voltage v1, and a selecting circuit 103 that selectively connects the first dc power supply unit 101 and the second dc power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first dc power supply unit 101 and the selecting circuit 103.. . ... Tokyo Electron Limited

01/01/15 / #20150000707

Cleaning method and processing apparatus

A method for cleaning a process chamber of a processing apparatus including the process chamber and a gas supply mechanism. The gas supply mechanism includes a flow splitter, a first flow path communicating with an upstream end of the flow splitter, a first valve provided in the first flow path, a second flow path communicating with a downstream end of the flow splitter and connected to the process chamber, a second valve provided in the second flow path, a bypass flow path connecting the first flow path and the second flow path, and a bypass valve provided in the bypass flow path. ... Tokyo Electron Limited

01/01/15 / #20150000517

Solution treatment apparatus and solution treatment method

A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.. . ... Tokyo Electron Limited








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