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Toshiba Materials Co Ltd patents


Recent patent applications related to Toshiba Materials Co Ltd. Toshiba Materials Co Ltd is listed as an Agent/Assignee. Note: Toshiba Materials Co Ltd may have other listings under different names/spellings. We're not affiliated with Toshiba Materials Co Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Toshiba Materials Co Ltd-related inventors


Tungsten alloy, tungsten alloy part, discharge lamp, transmitting tube, and magnetron

According to one embodiment, a tungsten alloy includes a W component and a Hf component including HfC. A content of the Hf component in terms of HfC is 0.1 wt % or more and 3 wt % or less.... Toshiba Materials Co Ltd

Silicon nitride circuit board and semiconductor module using the same

The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher, with attachment layers interposed therebetween, wherein assuming that a thickness of the metal plate on... Toshiba Materials Co Ltd

Light emitting device and led light bulb

A light emitting device includes: a first white light source which includes N pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes M pieces of second white light emitting diodes and a first resistance element electrically connected in... Toshiba Materials Co Ltd

Silicon nitride circuit board and electronic component module using the same

The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted... Toshiba Materials Co Ltd

Illumination system and illumination method

According to one embodiment, an illumination system includes a plurality of white light sources that satisfies −0.2≦[(P(λ)×V(λ))/(P(λmax1)×V(λmax1))−(B(λ)×V(λ))/(B(λmax2)×V(λmax2))]≦+0.2 where P(λ) is an emission spectrum of a white light source having a specific color temperature, B(λ) is an emission spectrum of black body radiation having a corresponding color temperature, V(λ) is a... Toshiba Materials Co Ltd

High thermal conductive silicon nitride sintered body, and silicon nitride substrate and silicon nitride circuit board and semiconductor apparatus using the same

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest... Toshiba Materials Co Ltd

Circuit substrate and semiconductor device

To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate... Toshiba Materials Co Ltd

Phosphor, producing method thereof, and light-emitting device employing the phosphor

Embodiments of the present invention provide a phosphor improved in the emission intensity maintenance ratio without impairing the emission intensity and further a light-emitting device employing that phosphor. The phosphor is activated by manganese and has a basic structure comprising at least one element selected from the group consisting of... Toshiba Materials Co Ltd

Friction stir welding tool member made of silicon nitride sintered body and friction stir welding apparatus using same

The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements... Toshiba Materials Co Ltd

Rare-earth regenerator material particles, and group of rare-earth regenerator material particles, refrigerator and measuring apparatus using the same, and manufacturing the same

Provided is a group of rare-earth regenerator material particles having an average particle size of 0.01 to 3 mm, wherein the proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, and the proportion of particles... Toshiba Materials Co Ltd

Rare earth cold accumulating material particles, and refrigerator, superconducting magnet, inspection device and cryopump using same

The present invention provides a rare earth cold accumulating material particle comprising a rare earth oxide or a rare earth oxysulfide, wherein the rare earth cold accumulating material particle is composed of a sintered body; an average crystal grain size of the sintered body is 0.5 to 5 μm; a... Toshiba Materials Co Ltd

Electrode material, and electrode layer, battery, and electrochromic device using the electrode material

The present invention provides an electrode material comprising at least one of metal compound powder and carbon powder, the powder having an average particle size of 50 μm or less and an activation energy Eα of 0.05 eV or less. Further, the powder preferably has hopping conduction characteristics at room... Toshiba Materials Co Ltd

White light source and white light source system

There is provided a white light source approximating sunlight and being capable of reproducing a subtle difference in sunlight which changes depending on times and locations, and provided a white light source system of a lighting system or the like. The white light source includes a light source unit. Light... Toshiba Materials Co Ltd

Lighting apparatus

A lighting apparatus according to an embodiment includes a globe, an optical element including a scattering portion inside and transparent to visible light, and a light source disposed to be opposed to a light incident surface of the optical element. The scattering portion is disposed inside the globe.... Toshiba Materials Co Ltd

Scintillator, scintillator array, radiation detector, and radiation examination device

To suppress a decrease in optical output of a scintillator. A scintillator includes a sintered body of 1 mm3 or less that contains a rare earth oxysulfide. In a composition image obtained by observing a cross-section of the sintered body under a scanning electron microscope, the sum of the number... Toshiba Materials Co Ltd

Optical element and illumination apparatus

An optical element according to an embodiment is formed from a material transparent to visible light and has a rotationally symmetrical shape with respect to the central axis. A cavity containing no transparent material is provided inside the optical element. The inner surface of the cavity has a shape in... Toshiba Materials Co Ltd

Silicon nitride substrate and silicon nitride circuit board using the same

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness... Toshiba Materials Co Ltd

Rotatable anode target for x-ray tube, x-ray tube, and x-ray inspection apparatus

A rotatable anode target for an X-ray tube (1) of the present invention includes a metallic disc (2) which includes a first crystal structure; a metallic cylinder (3) which is joined with the metallic disc and includes a second crystal structure, where a first average aspect ratio of first crystal... Toshiba Materials Co Ltd

Rare-earth regenerator material particles, and group of rare-earth regenerator material particles, refrigerator and measuring apparatus using the same, and manufacturing the same

Provided is a group of rare-earth regenerator material particles having an average particle size of 0.01 to 3 mm, wherein the proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, and the proportion of particles... Toshiba Materials Co Ltd

Light emitting device and led light bulb

A light emitting device includes: a first white light source which includes N pieces of first white light emitting diodes and emits a first white light; and a second white light source which includes M pieces of second white light emitting diodes and a first resistance element electrically connected in... Toshiba Materials Co Ltd

Plasma-resistant component, manufacturing the plasma-resistant component, and film deposition apparatus used for manufacturing the plasma-resistant component

The present invention provides a plasma-resistant component for use in a plasma apparatus, wherein an oxide film is formed on at least part of a surface of a substrate of the component, the oxide film is a deposited oxide film formed as an aggregate of polycrystalline particles, the polycrystalline particles... Toshiba Materials Co Ltd

Method of manufacturing sputtering target and sputtering target

The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering... Toshiba Materials Co Ltd

Permanent magnet, and motor and generator using the same

A permanent magnet of the embodiment includes: a composition represented by a composition formula: R(FepMqCurCtCo1-p-q-r-t)z (R is at least one element selected from rare-earth elements, M is at least one element selected from Ti, Zr and Hf, 0.27≦p≦0.45, 0.01≦q≦0.05, 0.01≦r≦0.1, 0.002≦t≦0.03, and 6≦z≦9); and a metallic structure including a main... Toshiba Materials Co Ltd

Component for plasma apparatus and manufacturing the same

A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 μm or less. A thickness of the aluminum nitride... Toshiba Materials Co Ltd








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