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Toshiba Memory Corporation patents


Recent patent applications related to Toshiba Memory Corporation. Toshiba Memory Corporation is listed as an Agent/Assignee. Note: Toshiba Memory Corporation may have other listings under different names/spellings. We're not affiliated with Toshiba Memory Corporation, we're just tracking patents.

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Semiconductor device and controlling semiconductor device

A semiconductor device includes a connector connectable to a host, a power supply circuit which includes an input portion that receives first power from the host via the connector, an output portion, and a switch that is connected to the input portion and the output portion and controls whether to... Toshiba Memory Corporation

Storage device and server device

According to one embodiment, a storage device includes a memory, a controller, an interface unit, a switch, and a switch control unit. The memory stores data. The controller is configured to control writing of data to the memory and reading of data from the memory. The interface unit includes a... Toshiba Memory Corporation

Semiconductor memory device

A semiconductor memory device includes a memory block, a plurality of bit lines, a plurality of select gate lines, a plurality of word lines, and a controller. The memory block includes a plurality of memory strings, each memory string including a selection transistor and a plurality of memory cells. The... Toshiba Memory Corporation

Method for cleaning substrate and cleaning device

According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate... Toshiba Memory Corporation

Method for cleaning substrate and substrate processing apparatus

According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method... Toshiba Memory Corporation

Semiconductor memory device and manufacturing same

A semiconductor memory device includes a stacked body including a plurality of word lines; a semiconductor layer extending through the word lines; a memory cell provided at a part where the semiconductor layer crosses one of the word lines, the memory cell including a plurality of cell layers, the cell... Toshiba Memory Corporation

Semiconductor memory device

A semiconductor memory device includes a semiconductor substrate, transistors formed in an upper surface of the semiconductor substrate, a stacked body provided on the semiconductor substrate, a first contact, and a second contact. The transistors are arranged along a first direction. A minimum period of an arrangement of the transistors... Toshiba Memory Corporation

Semiconductor memory device and manufacturing the same

According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first direction and have as their longitudinal direction a second direction intersecting the first direction. The second wiring lines are arranged in... Toshiba Memory Corporation

Memory system for controlling nonvolatile memory

According to one embodiment, a memory system includes a nonvolatile memory including physical blocks, and a controller. The controller manages namespaces. The namespaces include at least a first namespace for storing a first type of data, and a second namespace for storing a second type of data having a lower... Toshiba Memory Corporation

Semiconductor storage device and controller

A semiconductor storage device includes memory cells, select transistors, memory strings, first and second blocks, word lines, and select gate lines. In the memory string, the current paths of plural memory cells are connected in series. When data are written in a first block, after a select gate line connected... Toshiba Memory Corporation

Semiconductor storage device that dynamically changes a data buffering manner

A semiconductor storage device includes m (m≧2) memory chips, a buffer, and a controller. The controller arranges, in the buffer, a first plurality of data units to be transferred to N (1≦N≦m) of the m memory chips, in an order in which each of the first plurality of data units... Toshiba Memory Corporation

Information processing system that determines a memory to store program data for a task carried out by a processing core

An information processing system includes a first core, a second core having a processing speed that is slower than the first core, a first memory, a second memory having a slower response time than the first memory, and a management processor. The management processor is configured to determine a core... Toshiba Memory Corporation

Storage device compatible with selected one of multiple interface standards

A storage device includes a nonvolatile semiconductor memory module, a first interface circuit, and a second interface circuit conforming to an interface standard different from an interface standard of the first interface circuit. One of the first interface circuit and the second interface circuit is connected to the nonvolatile semiconductor... Toshiba Memory Corporation

Semiconductor storage device

A semiconductor storage device includes a first memory area; a first selection circuit which selectively connects one of first lines to one of first bit lines of the first memory area, the first lines and the first bit lines extending in a first direction; a second memory area; a second... Toshiba Memory Corporation

Manufacturing semiconductor device and semiconductor manufacturing apparatus

A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate... Toshiba Memory Corporation

Semiconductor device

According to one embodiment, the insulating layer is provided on the terrace portions. The plurality of contact portions extend through the insulating layer in the stacking direction and contact the terrace portions. The second columnar portion extends through the insulating layer and through the second stacked portion in the stacking... Toshiba Memory Corporation

Semiconductor device

According to one embodiment, the semiconductor body of the first portion includes a first semiconductor part and a second semiconductor part. The first semiconductor part extends in the stacking direction. The second semiconductor part is provided between the first semiconductor part and the first electrode layer, and has an end... Toshiba Memory Corporation

Semiconductor device

According to one embodiment, a semiconductor device includes an interconnection layer, a stacked body, a plurality of separation portions, a semiconductor body, a charge storage portion, an n-type semiconductor region, and a p-type semiconductor region. The n-type semiconductor region is provided between the separation portion and the first interconnection part,... Toshiba Memory Corporation

Resistance change memory

A resistance change memory including a memory cell having a resistance change element; a reference voltage generating circuit which generates a reference adjustment voltage; a first transistor which has a source and a drain, the drain providing a reference current in accordance with the reference adjustment voltage; and a sense... Toshiba Memory Corporation

Template for imprint

According to one embodiment, a template for imprint includes a base, a convex portion, and a liquid-repellent layer. The base has a main surface. The convex portion is provided on the main surface. The convex portion has an end surface on a side opposite to the main surface, and a... Toshiba Memory Corporation

Memory system storing block protection information

A memory system includes a controller that recognizes, as a command, a signal received immediately after a chip select signal is received from a host device, and a memory that includes a plurality of blocks. When the command is a first command, the controller outputs to the host device, information... Toshiba Memory Corporation

Storage device and storage control method

A storage device includes a nonvolatile semiconductor memory and a controller. The nonvolatile semiconductor memory includes a first region and a second region. The controller classifies a plurality of read requests for reading data from the nonvolatile semiconductor memory into first read requests for reading data from the first region... Toshiba Memory Corporation

Memory system executing garbage collection

According to one embodiment, a memory system includes a nonvolatile memory, detection unit, management unit, selection unit, and garbage collection unit. The nonvolatile memory includes memory areas divided into units of execution of garbage collection. The detection unit detects a data amount of data written to a different memory area... Toshiba Memory Corporation

Reducing wafer warpage during wafer processing

According to one embodiment, there is provided a manufacturing method of a semiconductor device. The method includes forming a first guard ring around a first chip region on a semiconductor wafer. The method includes forming a second guard ring around a second chip region on the semiconductor wafer. The method... Toshiba Memory Corporation

Semiconductor memory device

A semiconductor memory device includes a plurality of word lines stacked in a first direction; a semiconductor pillar extending through the plurality of word lines in the first direction; a source line electrically connected to the semiconductor pillar; and a transistor arranged in the first direction with the plurality of... Toshiba Memory Corporation

Semiconductor memory device and manufacturing the same

A semiconductor memory device according to an embodiment comprises a substrate, a plurality of first conductive films, a memory columnar body, and a first structure. The plurality of first conductive films are stacked in a first direction above the substrate and extend in a second direction intersecting the first direction... Toshiba Memory Corporation

Non-volatile memory device and manufacturing same

According to an embodiment, a non-volatile memory device includes a first conductive layer, electrodes, an interconnection layer and at least one semiconductor layer. The electrodes are arranged between the first conductive layer and the interconnection layer in a first direction perpendicular to the first conductive layer. The interconnection layer includes... Toshiba Memory Corporation

Imprint template manufacturing apparatus

According to one embodiment, an imprint template manufacturing apparatus includes a stage, a supply head, a moving mechanism, and a controller. The stage supports a template that includes a base having a main surface, and a convex portion provided on the main surface and having an end surface on a... Toshiba Memory Corporation

Imprint template manufacturing apparatus

According to one embodiment, an imprint template manufacturing apparatus includes a support unit, a vaporization unit, and an adhesion preventing plate. The support unit supports a template that includes a base having a main surface, and a convex portion provided on the main surface and having an end surface. A... Toshiba Memory Corporation

Memory system and controller

A memory system according to an embodiment includes non-volatile memory. The memory system includes a controller that controls data transfer between a host and the non-volatile memory, and a power supply unit that supplies a voltage to the controller. Further, the controller includes a power supply control unit that determines... Toshiba Memory Corporation

Semiconductor memory device and manufacturing the same

According to one embodiment, a semiconductor memory device includes a stacked body, first memory portions, and second memory portions. The stacked body includes conductive layers. The conductive layers are arranged in a first direction and extend in a second direction. The stacked body includes first and second regions. The second... Toshiba Memory Corporation

Information processing system

According to an embodiment, when a storage status of a first storage unit is recognized as a protected state, a control unit writes data to a second storage unit. When a read target address is recorded in a data migration log area, the control unit reads data from the second... Toshiba Memory Corporation

Memory system and controlling nonvolatile memory

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to... Toshiba Memory Corporation

Semiconductor storage device

According to one embodiment, a semiconductor storage device includes a memory cell, a bit line connected to the memory cell, and a sense circuit connected to the bit line, wherein the sense circuit includes a first transistor with a first end connected to the bit line, a second transistor with... Toshiba Memory Corporation

Plasma processing-apparatus processing object support platform, plasma processing apparatus, and plasma processing method

According to one embodiment, a plasma processing-apparatus processing object support platform includes a lower plate, an upper plate, and a variable condenser. The lower plate is electrically conductive. The upper plate is provided on the lower plate. A processing object is placed on an upper surface of the upper plate.... Toshiba Memory Corporation

01/11/18 / #20180013061

Memory device

According to one embodiment, a memory device includes a stacked body. The stacked body includes first and second electrodes, and an oxide layer provided between the first and second electrodes. The second electrode includes a semiconductor layer, and a metal-containing region including at least one of first or second metallic... Toshiba Memory Corporation

01/04/18 / #20180004267

Memory system

According to one embodiment, a memory system includes a volatile memory, a power supply circuit, and a controller. The power supply circuit includes a first power supply path in which power supplied from a host device is supplied to the volatile memory, a second power supply path in which the... Toshiba Memory Corporation

01/04/18 / #20180004416

Storage device that determines data attributes based on continuity of address ranges

A storage device includes a nonvolatile memory including a plurality of blocks, and a controller. The controller is configured to retain a logical address range designated by each of a plurality of write commands that were received, and upon each gap of two adjacent logical address ranges of two or... Toshiba Memory Corporation

01/04/18 / #20180004587

Information processing device, external storage device, host device, relay device, control program, and control information processing device

According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of... Toshiba Memory Corporation

01/04/18 / #20180004669

Cache device and storing tag data and cache data in cache device

A cache device of an embodiment includes a tag/data memory. The tag/data memory includes a storage area capable of storing a plurality of pieces of tag data and a plurality of pieces of compressed cache data corresponding to the plurality of pieces of tag data; and each of the pieces... Toshiba Memory Corporation

01/04/18 / #20180004672

Cache unit and processor

According to an embodiment, a cache unit includes: a first memory configured to temporarily hold data and an address of the data, a second memory configured to temporarily hold an address of particular data set in advance, and a controller configured to, when an instruction to load the data is... Toshiba Memory Corporation

01/04/18 / #20180005695

Nonvolatile semiconductor memory device

A nonvolatile semiconductor memory device includes a control circuit configured to control a soft program operation of setting nonvolatile memory cells to a first threshold voltage distribution state of the nonvolatile memory cells. When a characteristic of the nonvolatile memory cells is in a first state, the control circuit executes... Toshiba Memory Corporation

01/04/18 / #20180005698

Memory device

A memory device includes a plurality of memory cell transistors, a word line electrically connected to gates of the memory cell transistors, and a control circuit configured to perform programming of the memory cell transistors to a plurality of different threshold voltage ranges in a plurality of loops, each loop... Toshiba Memory Corporation

01/04/18 / #20180005702

Booster circuit

A booster circuit includes a charge pump circuit and a clock processing circuit. The clock processing circuit includes a first transistor of a first conductivity type, a second transistor of a second conductivity type, and a third transistor of a third conductivity type. The first and second transistors are connected... Toshiba Memory Corporation

01/04/18 / #20180005854

Chemical liquid treatment apparatus and chemical liquid treatment method

A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured... Toshiba Memory Corporation

01/04/18 / #20180005861

Semiconductor manufacturing apparatus and operating the same

In one embodiment, a semiconductor manufacturing apparatus includes an electrostatic chuck that includes a base and a first electrode provided on the base and is configured to electrostatically adsorb a wafer on the first electrode. The apparatus further includes a measurement module configured to measure potential of the wafer. The... Toshiba Memory Corporation

01/04/18 / #20180006042

Semiconductor memory

A semiconductor memory includes a memory cell region that includes multiple memory cells stacked above a semiconductor substrate, first and second dummy regions on opposite sides of the memory cell region, each dummy region including multiple dummy cells stacked above the semiconductor substrate, and a wiring that electrically connects dummy... Toshiba Memory Corporation

01/04/18 / #20180006050

Semiconductor memory device and manufacturing same

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar... Toshiba Memory Corporation

01/04/18 / #20180006051

Semiconductor memory device

A semiconductor memory device according to an embodiment, includes a plurality of semiconductor pillars extending in a first direction and being arranged along a second direction crossing the first direction, two interconnects extending in the second direction and being provided on two sides of the plurality of semiconductor pillars in... Toshiba Memory Corporation

01/04/18 / #20180006053

Semiconductor memory device and manufacturing the same

According to an embodiment, a semiconductor memory device includes a plurality of control gate electrodes, a semiconductor layer, and a charge accumulation layer. The plurality of control gate electrodes are provided as a stack above a substrate. The semiconductor layer has as its longitudinal direction a direction perpendicular to the... Toshiba Memory Corporation

01/04/18 / #20180006089

Semiconductor device and manufacturing the same

a first conductive body contacting the stacked body to extend in a stacking direction; and a plurality of first insulating films in the same layers as the first conductive films and disposed between the first conductive body and the first conductive films, the first conductive body including a projecting part... Toshiba Memory Corporation

01/04/18 / #20180006212

Magnetic memory device

According to one embodiment, a magnetic memory device includes a magnetic memory chip having a magnetoresistive element, a magnetic layer having first and second portions spacing out each other, the first portion covering a first main surface of the magnetic memory chip, the second portion covering a second main surface... Toshiba Memory Corporation

01/04/18 / #20180006216

Memory device

A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a third conductive layer intersecting the first conductive layer and the second conductive layer, and a resistance change layer including a first region which is provided between the first conductive layer and the third... Toshiba Memory Corporation

12/28/17 / #20170369988

Semiconductor manufacturing apparatus and manufacturing semiconductor device

In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet... Toshiba Memory Corporation

12/28/17 / #20170371780

Reconstruct drive for dynamic resizing

A solid-state drive (SSD) is configured for dynamic resizing. When the SSD approaches the end of its useful life because the over-provisioning amount is nearing the minimum threshold as a result of an increasing number of bad blocks, the SSD is reformatted with a reduced logical capacity so that the... Toshiba Memory Corporation

12/28/17 / #20170372791

Memory device and controlling method thereof

According to one embodiment, a memory device includes: a memory cell array including a first and a second array; a fuse circuit to hold first data; and a control circuit to control a replacement process on the first and second arrays based on the first data. When a first address... Toshiba Memory Corporation

12/28/17 / #20170372798

Memory device and memory system

A memory device of one embodiment includes memory elements which store data and parity; a first decoder which, when scrubbing of the data is performed while no external access is being made to the memory device, uses a syndrome generated from the data and the parity to correct an error... Toshiba Memory Corporation

12/28/17 / #20170373080

Non-volatile semiconductor memory device and manufacturing method thereof

This non-volatile semiconductor memory device includes a memory cell array including NAND cell units formed in a first direction vertical to a surface of a semiconductor substrate. A local source line is electrically coupled to one end of the NAND cell unit formed on the surface of the substrate. The... Toshiba Memory Corporation

12/28/17 / #20170373082

Semiconductor memory device and manufacturing same

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the semiconductor pillar... Toshiba Memory Corporation

12/28/17 / #20170373119

Semiconductor memory device and manufacturing the same

A semiconductor memory device according to an embodiment comprises: a semiconductor substrate extending in a first direction and a second direction, the first and second directions intersecting each other; a first wiring line disposed above the semiconductor substrate and extending in the first direction; a second wiring line disposed above... Toshiba Memory Corporation

12/21/17 / #20170364309

Memory system and controlling nonvolatile memory

According to one embodiment, a memory controller of a memory system includes a command issuing unit, a decoder, a counter, and a statistical processor. The command issuing unit issues a first command for single read of first data from a nonvolatile memory. The decoder performs first error correction on the... Toshiba Memory Corporation

12/21/17 / #20170364407

Semiconductor storage device

According to one embodiment, a memory system includes: a first memory cell area where a first memory cell is provided; a second memory cell area where a second memory cell is provided; an ECC circuit which corrects an error of data stored by the first memory cell; and a control... Toshiba Memory Corporation

12/21/17 / #20170364624

Method of calculating processed depth and storage medium storing processed-depth calculating program

A method of calculating a form according to an embodiment relates to a method of calculating a processed depth of a material to be etched when the material to be etched is etched using a mask material. The method comprises calculating a first opening solid angle Ω1 based on an... Toshiba Memory Corporation

12/21/17 / #20170364791

Arithmetic a neural network

An arithmetic apparatus used for a neural network includes a plurality of digital-time conversion circuits connected in series and a time-digital conversion circuit connected to a last digital-time conversion circuit in the series. Each of the digital-time conversion circuits is configured to delay a first input time signal by a... Toshiba Memory Corporation

12/21/17 / #20170365335

Semiconductor memory device and memory system

A semiconductor memory device includes a first memory cell array including a first memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a second memory cell array including a second memory cell that is capable of... Toshiba Memory Corporation

Patent Packs
12/21/17 / #20170365347

Semiconductor device

A semiconductor device includes a first circuit configured to generate a first voltage based on a first current, a second circuit that includes a first transistor of a first conductivity type having a first terminal, a second terminal, and a first gate, the second circuit configured to generate a second... Toshiba Memory Corporation

12/21/17 / #20170365348

Semiconductor memory device

A semiconductor memory device includes a memory cell, a bit line connected to the memory cell, and a sense amplifier connected to the memory cell through the bit line. The sense amplifier includes a sense node connected to the bit line, a first capacitive element connected to the sense node,... Toshiba Memory Corporation

12/21/17 / #20170365350

Memory system

According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to... Toshiba Memory Corporation

12/21/17 / #20170365357

Magnetic memory device and controlling method thereof

A magnetic memory device includes a memory cell array comprising memory cells including magnetic tunnel junction elements. Each memory cell is electrically connected between a source line and a bit line. A control circuit is configured to perform a screening test on the memory cell array before writing data to... Toshiba Memory Corporation

12/21/17 / #20170365470

Device substrate, manufacturing device substrate, and manufacturing semiconductor device

According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint... Toshiba Memory Corporation

12/21/17 / #20170365639

Semiconductor memory device and manufacturing the same

A connection unit is provided adjacently to the cell array unit and electrically connected to a peripheral circuit unit positioned downwardly of the cell array unit. The cell array unit has a configuration in which a variable resistance layer is provided at intersections of a plurality of word lines extending... Toshiba Memory Corporation

12/14/17 / #20170357581

Memory device controlling method and memory device

According one embodiment, a memory device controlling method includes: receiving, by a first semiconductor memory, a read command transmitted from a controller; receiving, by a second semiconductor memory, a write command transmitted from the controller; reading, by the first semiconductor, data from the first semiconductor memory based on the read... Toshiba Memory Corporation

12/07/17 / #20170351608

Host device

According to one embodiment, a host device is provided. The host device includes a processor that stores a log of a file in plurality of storages using a log -structured file system. The processor selects in which of the plural storages to store a log which is determined to be... Toshiba Memory Corporation

12/07/17 / #20170352427

Memory controller, memory control method, and coefficient decision method

According to one embodiment, a distribution of threshold voltages of a plurality of memory cells is acquired from a nonvolatile memory which includes the plurality of memory cells, a malfunction state occurring in the nonvolatile memory is identified based on a shape of the distribution, and a read voltage when... Toshiba Memory Corporation

12/07/17 / #20170352622

Semiconductor device and manufacturing method thereof

A semiconductor device according to this embodiment includes a semiconductor layer, a plurality of diffusion layers in the semiconductor layer, a gate insulating film, a gate electrode, first contacts, and second contacts. The gate insulating film is on the semiconductor layer between the plurality of diffusion layers. The gate electrode... Toshiba Memory Corporation

12/07/17 / #20170352671

Semiconductor memory device and manufacturing same

A semiconductor memory device according to an embodiment, includes a semiconductor pillar extending in a first direction, a first electrode extending in a second direction crossing the first direction, a second electrode provided between the semiconductor pillar and the first electrode, a first insulating film provided between the first electrode... Toshiba Memory Corporation

12/07/17 / #20170352672

Semiconductor memory device

A semiconductor memory device according to an embodiment includes first and second semiconductor pillars extending in a first direction and being arranged along a second direction, first and second interconnects extending in a third direction and being provided between the first semiconductor pillar and the second semiconductor pillar, a first... Toshiba Memory Corporation

12/07/17 / #20170352705

Memory device and manufacturing the same

A memory device according to one embodiment includes a resistance change film, an insulating film provided on the resistance change film, a first wiring provided on the insulating film and being not in contact with the resistance change film, and a high resistance film having a higher resistivity than the... Toshiba Memory Corporation

12/07/17 / #20170352735

Semiconductor memory device and manufacturing same

A semiconductor memory device according to an embodiment, includes a pair of first electrodes, a semiconductor pillar, an inter-pillar insulating member, a first insulating film, a second electrode, and a second insulating film. The pair of first electrodes are separated from each other, and extend in a first direction. The... Toshiba Memory Corporation

11/30/17 / #20170340995

Chemical liquid supply system and chemical liquid supply method

According to one embodiment, there is provided a chemical liquid supply system including a chemical liquid supply apparatus and a monitoring apparatus. The chemical liquid supply apparatus includes a nozzle, a filter, a first pressure gauge, and a second pressure gauge. The first and the second pressure gauge are disposed... Toshiba Memory Corporation

Patent Packs
11/30/17 / #20170344471

Memory system capable of controlling wireless communication function

According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, controller, memory, wireless communication function section, and extension register. The controller controls the nonvolatile semiconductor memory device. The memory is serving as a work area of the controller. The wireless communication module has a wireless communication function.... Toshiba Memory Corporation

11/30/17 / #20170345727

Deposition supporting system, depositing apparatus and manufacturing a semiconductor device

According to one embodiment, deposition supporting system, depositing apparatus and manufacturing method of a semiconductor device includes a depositing apparatus that deposits stacked bodies on wafers allocated to stations and a host computer. The host computer evaluates feature amounts convertible to misalignments at predetermined points on the stacked bodies of... Toshiba Memory Corporation

11/30/17 / #20170345837

Semiconductor memory device

A semiconductor device according to an embodiment includes two semiconductor pillars, a connection member connected between the two semiconductor pillars, and a contact connected to the connection member. There is not a conductive member disposed between the two semiconductor pillars.... Toshiba Memory Corporation

11/30/17 / #20170345838

Non-volatile memory device

The semiconductor layer extends in the first direction in the electrodes and the interlayer insulating film. The conductive layers are provided between each of the electrodes and the semiconductor layer, and separated from each other in the first direction. The first insulating film is provided between the conductive layers and... Toshiba Memory Corporation

11/30/17 / #20170347454

Electronic device

According to an embodiment, an electronic device includes a substrate, first conductors, second conductors, a connector, third conductors, an electronic component, and a first wiring. The first conductor is complied with a first USB standard. The second conductor is complied with a second USB standard. The connector is mounted on... Toshiba Memory Corporation

11/23/17 / #20170336721

Reflection mask and pattern formation method

According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are... Toshiba Memory Corporation

11/23/17 / #20170337976

Semiconductor device

A semiconductor device includes a memory circuit, a first FIFO, a second FIFO and an input/output circuit. The memory circuit outputs data. The first FIFO receives data from the memory circuit and outputs data synchronously with a first clock signal. The second FIFO receives data output from the first FIFO... Toshiba Memory Corporation

11/23/17 / #20170338102

Substrate treatment apparatus and substrate treatment method

In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that... Toshiba Memory Corporation

11/23/17 / #20170338187

Semiconductor device

A semiconductor device includes a substrate and a conductive layer. The substrate has an upper surface that is a substantially rectangular shape having a pair of two sides extending in a first direction and a pair of two sides extending in a second direction. The conductive layer is provided on... Toshiba Memory Corporation

11/16/17 / #20170329887

Layout mask pattern, manufacturing a semiconductor device and exposure mask

According to one embodiment, a layout region of a mask pattern is divided into N (N is an integer of 2 or larger) units, a main pattern resolved by exposure light is arranged and sub patterns not resolved by the exposure light are arranged outside the main pattern such that... Toshiba Memory Corporation

11/16/17 / #20170330629

Nonvolatile semiconductor memory device which performs improved erase operation

According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control unit. The memory cell array includes a plurality of memory cells arranged in a matrix. The control unit erases data of the memory cells. The control unit interrupts the erase operation of the... Toshiba Memory Corporation

11/16/17 / #20170330890

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes forming a first mask layer having a first opening on an underlying layer; forming a first layer in a space where the underlying layer is selectively removed via the first opening; forming a second mask layer on the first mask layer and... Toshiba Memory Corporation

11/16/17 / #20170330892

Manufacturing a semiconductor device and semiconductor device

According to one embodiment, a first stacked body in which first insulation layers and second insulation layers are alternately stacked is formed, a first hole penetrating through the first stacked body is formed, a sacrifice film is embedded in the first hole, the sacrifice film is protruded from the first... Toshiba Memory Corporation

11/09/17 / #20170324720

Information recording apparatus

An information recording apparatus has a drive unit to record digital information including digital contents; and a host unit to control reading and writing of the digital information for the drive unit. The host unit has a network processing unit to communicate with a server, a shadow determination unit to... Toshiba Memory Corporation

10/26/17 / #20170309313

Semiconductor device

According to an embodiment, a semiconductor device includes a substrate, a connector, a volatile semiconductor memory element, multiple nonvolatile semiconductor memory elements, and a controller. A wiring pattern includes a signal line that is formed between the connector and the controller and that connects the connector to the controller. On... Toshiba Memory Corporation

10/26/17 / #20170309501

Substrate treatment apparatus and substrate treatment method

According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by... Toshiba Memory Corporation

10/26/17 / #20170309598

Semiconductor device

According to one embodiment, M (M represents an integer of 2 or larger) semiconductor chips and through electrodes for N (N represents an integer of 2 or larger) channels are provided. The M semiconductor chips are stacked in sequence. The through electrodes are embedded in the semiconductor chips to connect... Toshiba Memory Corporation

10/19/17 / #20170301402

Memory system

According to one embodiment, a memory system includes a semiconductor memory and a memory controller. The memory controller writes a first data group in the semiconductor memory and then reads the first data group from the semiconductor memory. The memory controller counts a number of first data and a number... Toshiba Memory Corporation

10/19/17 / #20170301691

Semiconductor memory device and manufacturing same

According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method includes forming a trench in the stacked body. The trench extends in one direction and divides the conductive film. The method... Toshiba Memory Corporation

10/12/17 / #20170294446

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and at least one columnar member. The stacked body is provided on the substrate. In the stacked body, a plurality of insulating films and a plurality of electrode films... Toshiba Memory Corporation

09/14/17 / #20170263474

Semiconductor manufacturing apparatus

A semiconductor manufacturing apparatus according to the present embodiment includes a first cooler, a second cooler, and a temperature controller. The first cooler includes a first placing portion that can place a central portion of a semiconductor substrate thereon, and cools the central portion by heat exchange with the first... Toshiba Memory Corporation








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