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Tower Semiconductor Ltd patents

Recent patent applications related to Tower Semiconductor Ltd. Tower Semiconductor Ltd is listed as an Agent/Assignee. Note: Tower Semiconductor Ltd may have other listings under different names/spellings. We're not affiliated with Tower Semiconductor Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Tower Semiconductor Ltd-related inventors

Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants

A Schmitt trigger's hysteresis is established by standard and non-standard MOSFETs having different (lower/higher) threshold voltages. For example, a standard n-channel transistor having a relatively low threshold voltage (e.g., 1V) sets the lower trigger switching voltage, and a non-standard n-channel transistor (e.g., an n-channel source/drain and a polysilicon gate doped... Tower Semiconductor Ltd

Composition and forming a dielectric layer

A porous layer is described. The porous layer comprises a solidified sol-gel inorganic material having a distribution of nanometric voids, wherein at least some of nanometric voids are at least partially coated internally by carbon or a hydrophobic substance containing carbon.... Tower Semiconductor Ltd

Image sensor pixel with memory node having buried channel and diode portions formed on n-type substrate

A global shutter image sensor formed on an n-type bulk substrate and including pixels having pinned n-type photodiodes and memory nodes formed in designated n-doped epitaxial layer regions that are separated from the bulk substrate by a p-type vertical (potential) barrier implant. Each memory node includes both a buried channel... Tower Semiconductor Ltd

Backside illuminated (bsi) cmos image sensor (cis) with a resonant cavity and a manufacturing the bsi cis

A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.... Tower Semiconductor Ltd

Method for manufacturing a trench metal insulator metal capacitor

A method for manufacturing a metal insulator metal (MIM) trench capacitor, the method may include forming a cavity in an Intermetal Dielectric stack, wherein a bottom of the cavity exposes a lower metal layer; wherein the Intermetal Dielectric stack comprises a top dielectric layer; depositing a first metal layer on... Tower Semiconductor Ltd

Gas sensing using magnetic tunnel junction elements

Gas sensing using MTJ elements to capture/store gas concentration level data for readout at room temperature. In one embodiment, during reset the MTJ elements are heated above blocking temperatures of their storage layers while applying a first magnetic biasing force to set initial magnetic orientations. During gas sensing, reaction heat... Tower Semiconductor Ltd

Semiconductor gas sensor using magnetic tunnel junction elements

A CMOS gas sensor that uses MTJ elements to capture/store gas concentration level data at high temperatures for later readout at low temperatures. Each MTJ element includes a storage layer whose magnetic orientation is switchable between parallel and anti-parallel directions relative to a fixed reference when heated above the storage... Tower Semiconductor Ltd

Semiconductor die with a metal via

A semiconductor die that may include a substrate; an epitaxial layer; a metal layer; a first transistor; and a metal via that surrounds the first transistor, extends between the metal layer and the substrate, and penetrates the substrate.... Tower Semiconductor Ltd

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Tower Semiconductor Ltd in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Tower Semiconductor Ltd with additional patents listed. Browse our Agent directory for other possible listings. Page by