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Tower Semiconductor Ltd patents


Recent patent applications related to Tower Semiconductor Ltd. Tower Semiconductor Ltd is listed as an Agent/Assignee. Note: Tower Semiconductor Ltd may have other listings under different names/spellings. We're not affiliated with Tower Semiconductor Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Tower Semiconductor Ltd-related inventors


Schmitt trigger circuit with hysteresis determined by modified polysilicon gate dopants

A Schmitt trigger's hysteresis is established by standard and non-standard MOSFETs having different (lower/higher) threshold voltages. For example, a standard n-channel transistor having a relatively low threshold voltage (e.g., 1V) sets the lower trigger switching voltage, and a non-standard n-channel transistor (e.g., an n-channel source/drain and a polysilicon gate doped... Tower Semiconductor Ltd

Composition and forming a dielectric layer

A porous layer is described. The porous layer comprises a solidified sol-gel inorganic material having a distribution of nanometric voids, wherein at least some of nanometric voids are at least partially coated internally by carbon or a hydrophobic substance containing carbon.... Tower Semiconductor Ltd

Image sensor pixel with memory node having buried channel and diode portions formed on n-type substrate

A global shutter image sensor formed on an n-type bulk substrate and including pixels having pinned n-type photodiodes and memory nodes formed in designated n-doped epitaxial layer regions that are separated from the bulk substrate by a p-type vertical (potential) barrier implant. Each memory node includes both a buried channel... Tower Semiconductor Ltd

Backside illuminated (bsi) cmos image sensor (cis) with a resonant cavity and a manufacturing the bsi cis

A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.... Tower Semiconductor Ltd

Method for manufacturing a trench metal insulator metal capacitor

A method for manufacturing a metal insulator metal (MIM) trench capacitor, the method may include forming a cavity in an Intermetal Dielectric stack, wherein a bottom of the cavity exposes a lower metal layer; wherein the Intermetal Dielectric stack comprises a top dielectric layer; depositing a first metal layer on... Tower Semiconductor Ltd

Gas sensing using magnetic tunnel junction elements

Gas sensing using MTJ elements to capture/store gas concentration level data for readout at room temperature. In one embodiment, during reset the MTJ elements are heated above blocking temperatures of their storage layers while applying a first magnetic biasing force to set initial magnetic orientations. During gas sensing, reaction heat... Tower Semiconductor Ltd

Semiconductor gas sensor using magnetic tunnel junction elements

A CMOS gas sensor that uses MTJ elements to capture/store gas concentration level data at high temperatures for later readout at low temperatures. Each MTJ element includes a storage layer whose magnetic orientation is switchable between parallel and anti-parallel directions relative to a fixed reference when heated above the storage... Tower Semiconductor Ltd

Semiconductor die with a metal via

A semiconductor die that may include a substrate; an epitaxial layer; a metal layer; a first transistor; and a metal via that surrounds the first transistor, extends between the metal layer and the substrate, and penetrates the substrate.... Tower Semiconductor Ltd








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