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Toyo Tanso Co Ltd
Toyo Tanso Co Ltd_20131212

Toyo Tanso Co Ltd patents


Recent patent applications related to Toyo Tanso Co Ltd. Toyo Tanso Co Ltd is listed as an Agent/Assignee. Note: Toyo Tanso Co Ltd may have other listings under different names/spellings. We're not affiliated with Toyo Tanso Co Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Toyo Tanso Co Ltd-related inventors


Positive electrode for air battery, air battery using the positive electrode, and manufacturing the positive electrode

A positive electrode for an air battery includes an expanded graphite sheet containing expanded graphite and Nb dispersed within the sheet. It is desirable that the Nb be contained in a weight proportion of from 5 ppm to 50000 ppm with respect to the expanded graphite.... Toyo Tanso Co Ltd

Surface treatment sic substrate

Provided is a surface treatment method for a SiC substrate (40), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate (40) is etched by heating... Toyo Tanso Co Ltd

Sic substrate treatment method

Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si... Toyo Tanso Co Ltd

Etching sic substrate and holding container

Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC... Toyo Tanso Co Ltd

Method for manufacturing thin sic wafer and thin sic wafer

Provided is a method for manufacturing a thin SiC wafer by which a SiC wafer is thinned using a method without generating crack or the like, the method in which polishing after adjusting the thickness of the SiC wafer can be omitted. The method for manufacturing the thin SiC wafer... Toyo Tanso Co Ltd

Expanded graphite sheet and battery using the expanded graphite sheet

An expanded graphite sheet and a battery using the expanded graphite sheet are provided, that can inhibit the expanded graphite sheet from swelling even when the expanded graphite sheet is used for, for example, a positive electrode for an air battery. An expanded graphite sheet includes an expanded graphite and... Toyo Tanso Co Ltd

Expanded-graphite sheet

An expanded-graphite sheet whose thermal conductivity in its surfacewise directions is relatively uniform and higher than its thermal conductivity in its perpendicular direction can be produced efficiently at relatively low cost. Because the expanded-graphite sheet is made of expanded graphite alone and has thermal conductivity in parallel direction of 350... Toyo Tanso Co Ltd

Susceptor and manufacturing same

Provided are a susceptor that, in forming a thin film on a wafer, can reduce impurities or the like adhering to the wafer and a method for manufacturing the same. A susceptor includes a base material (10) with a recess (11), a tantalum carbide layer (22) formed directly on a... Toyo Tanso Co Ltd

Surface treatment sic substrates, sic substrate, and semiconductor production method

When a SiC substrate (40) after performing mechanical treatment is heat-treated under SiC atmosphere to etch the SiC substrate (40), the etching rate is controlled by adjusting the inert gas pressure around the periphery of the SiC substrate (40). As a result, when latent scratches or the like exist in... Toyo Tanso Co Ltd

Method for removing work-affected layer on sic seed crystal, sic seed crystal, and sic substrate manufacturing method

Provided is a method in which the rate of growth is lowered even when a cut SiC seed crystal is used in performing MSE process. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy process (MSE process) is heated under Si atmosphere and the... Toyo Tanso Co Ltd

Method for estimating depth of latent scratches in sic substrates

This method for estimating the depth of latent scratches in SiC substrates includes an etching step, a measurement step, and an estimation step. In the etching step, a SiC substrate in which at least the surface is formed from single crystal SiC, and which has been subjected to machining, is... Toyo Tanso Co Ltd

Graphite-copper composite electrode material and electrical discharge machining electrode using the material

An object is to provide a graphite-copper composite electrode material that is capable of reducing electrode wear to a practically usable level and to provide an electrical discharge machining electrode using the material. A graphite-copper composite electrode material includes a substrate comprising a graphite material and having pores, and copper... Toyo Tanso Co Ltd

Resin bonded carbonaceous brush and manufacturing the same

A carbonaceous material is fabricated by kneading of carbon powder and a binder. The carbonaceous material is granulated such that an average particle diameter of the carbonaceous material is 0.3 mm or more. A brush material is fabricated by mixing of the granulated carbonaceous material and metallic powder. A ratio... Toyo Tanso Co Ltd

Porous carbon, manufacturing porous carbon, and adsorption/desorption apparatus using porous carbon

A porous carbon having a high oxidation reaction temperature, a method of manufacturing the porous carbon, and an adsorption/desorption apparatus using the porous carbon are provided. A porous carbon includes mesopores and a carbonaceous wall forming an outer wall of the mesopores, characterized by being composed mainly of hard carbon... Toyo Tanso Co Ltd








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