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Transphorm, Inc. patents


      
Recent patent applications related to Transphorm, Inc.. Transphorm, Inc. is listed as an Agent/Assignee. Note: Transphorm, Inc. may have other listings under different names/spellings. We're not affiliated with Transphorm, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm, Inc.-related inventors



Transphorm

Transistors with isolation regions

Search recent Press Releases: Transphorm, Inc.-related press releases
Count Application # Date Transphorm, Inc. patents (updated weekly) - BOOKMARK this page
12014023182308/21/14Electrodes for semiconductor devices and methods of forming the same
22014023192908/21/14Transistors with isolation regions
32014019742107/17/14Electrode configurations for semiconductor devices
42014016242106/12/14Semiconductor devices with field plates
52014010339904/17/14Gallium nitride power devices
62014010398904/17/14Semiconductor power modules and devices
72014010339904/17/14Gallium nitride power devices
82014010398904/17/14Semiconductor power modules and devices
92014009975704/10/14Iii-n device structures and methods
102014009975704/10/14Iii-n device structures and methods
112014009975704/10/14Iii-n device structures and methods
122014009401004/03/14Method of forming electronic components with increased reliability
132014009401004/03/14Method of forming electronic components with increased reliability
142014005460302/27/14Semiconductor heterostructure diodes
152014004884902/20/14Package configurations for low emi circuits
162014004249502/13/14Semiconductor electronic components and circuits
172014001506601/16/14Semiconductor electronic components with integrated current limiters
182014000155701/02/14Semiconductor devices with integrated hole collectors
192013032093912/05/13Inductive load power switching circuits
202013031650211/28/13Enhancement mode iii-n hemts
212013026457810/10/13N-polar iii-nitride transistors
222013024962209/26/13Bridge circuits and their components
232013023425709/12/13Package configurations for low emi circuits
242013022204508/29/13Semiconductor power modules and devices
252013022204508/29/13Semiconductor power modules and devices
262013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
272013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
282013020043508/08/13Semiconductor devices with field plates
292013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
302013020043508/08/13Semiconductor devices with field plates
312013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
322013017558007/11/13Gallium nitride power devices
332013017558007/11/13Gallium nitride power devices
342013014754006/13/13Semiconductor modules and methods of forming the same
352013014754006/13/13Semiconductor modules and methods of forming the same
362013014018906/06/13Compact electric appliance for providing gas for combustion
372013014018906/06/13Compact electric appliance for providing gas for combustion
382013008828004/11/13High power semiconductor electronic components with increased reliability
392013006262103/14/13Iii-n device structures having a non-insulating substrate
402013005674403/07/13Semiconductor devices with guard rings
412013000961301/10/13Inductive load power switching circuits
422013000969201/10/13Inductive load power switching circuits
432012026764010/25/12Semiconductor heterostructure diodes
442012022331909/06/12Semiconductor diodes with low reverse bias currents
452012022332009/06/12Electrode configurations for semiconductor devices
462012021802508/30/12Electronic components with reactive filters
472012019367708/02/12Iii-n device structures and methods
482012017568007/12/12Enhancement mode gallium nitride power devices
492012015339006/21/12Transistors with isolation regions
502012013297305/31/12Package configurations for low emi circuits
512012012623905/24/12Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
522011024947710/13/11Bridge circuits and their components
532011019361908/11/11Semiconductor electronic components and circuits
542011016954907/14/11Electronic devices and components for high efficiency power circuits
552011014017206/16/11Reverse side engineered iii-nitride devices
562011012754106/02/11Semiconductor heterostructure diodes
572011012131405/26/11Enhancement mode gallium nitride power devices
582011010146605/05/11Package configurations for low emi circuits
592011004952603/03/11Semiconductor devices with field plates
602010028906711/18/10High voltage iii-nitride semiconductor devices
612010025564610/07/10Iii-nitride devices with recessed gates
622010020143908/12/10Iii-nitride devices and circuits
632010007306703/25/10Inductive load power switching circuits
642009026707810/29/09Enhancement mode iii-n hemts
652009014618506/11/09Insulated gate e-mode transistors
662009014577106/11/09Compact electric appliance for providing gas for combustion
672009013404105/28/09Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
682009007224003/19/09Iii-nitride devices with recessed gates
692009007227203/19/09Enhancement mode gallium nitride power devices


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Transphorm, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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