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Transphorm, Inc. patents


      
Recent patent applications related to Transphorm, Inc.. Transphorm, Inc. is listed as an Agent/Assignee. Note: Transphorm, Inc. may have other listings under different names/spellings. We're not affiliated with Transphorm, Inc., we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm, Inc.-related inventors


Iii-n device structures and methods

Transphorm

Iii-n device structures and methods

Semiconductor diodes with low reverse bias currents

Transphorm

Semiconductor diodes with low reverse bias currents

Search recent Press Releases: Transphorm, Inc.-related press releases
Count Application # Date Transphorm, Inc. patents (updated weekly) - BOOKMARK this page
12015005411702/26/15 new patent  Semiconductor devices with guard rings
22015004186102/12/15Iii-n device structures and methods
32015004186402/12/15Semiconductor diodes with low reverse bias currents
42015002155201/22/15Iii-nitride transistor including a p-type depleting layer
52015001616901/15/15Multilevel inverters and their components
62014037791112/25/14Package configurations for low emi circuits
72014037793012/25/14Method of forming electronic components with increased reliability
82014034251211/20/14High voltage iii-nitride semiconductor devices
92014029239510/02/14Gate drivers for circuits based on semiconductor devices
102014026437009/18/14Carbon doping semiconductor devices
112014026445509/18/14Carbon doping semiconductor devices
122014027342209/18/14Method for making semiconductor diodes with low reverse bias currents
132014023182308/21/14Electrodes for semiconductor devices and methods of forming the same
142014023192908/21/14Transistors with isolation regions
152014019742107/17/14Electrode configurations for semiconductor devices
162014016242106/12/14Semiconductor devices with field plates
172014010339904/17/14Gallium nitride power devices
182014010398904/17/14Semiconductor power modules and devices
192014009975704/10/14Iii-n device structures and methods
202014009401004/03/14Method of forming electronic components with increased reliability
212014005460302/27/14Semiconductor heterostructure diodes
222014004884902/20/14Package configurations for low emi circuits
232014004249502/13/14Semiconductor electronic components and circuits
242014001506601/16/14Semiconductor electronic components with integrated current limiters
252014000155701/02/14Semiconductor devices with integrated hole collectors
262013032093912/05/13Inductive load power switching circuits
272013031650211/28/13Enhancement mode iii-n hemts
282013026457810/10/13N-polar iii-nitride transistors
292013024962209/26/13Bridge circuits and their components
302013023425709/12/13Package configurations for low emi circuits
312013022204508/29/13Semiconductor power modules and devices
322013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
332013020043508/08/13Semiconductor devices with field plates
342013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
352013017558007/11/13Gallium nitride power devices
362013014754006/13/13Semiconductor modules and methods of forming the same
372013014018906/06/13Compact electric appliance for providing gas for combustion
382013008828004/11/13High power semiconductor electronic components with increased reliability
392013006262103/14/13Iii-n device structures having a non-insulating substrate
402013005674403/07/13Semiconductor devices with guard rings
412013000961301/10/13Inductive load power switching circuits
422013000969201/10/13Inductive load power switching circuits
432012026764010/25/12Semiconductor heterostructure diodes
442012022331909/06/12Semiconductor diodes with low reverse bias currents
452012022332009/06/12Electrode configurations for semiconductor devices
462012021802508/30/12Electronic components with reactive filters
472012019367708/02/12Iii-n device structures and methods
482012017568007/12/12Enhancement mode gallium nitride power devices
492012015339006/21/12Transistors with isolation regions
502012013297305/31/12Package configurations for low emi circuits
512012012623905/24/12Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
522011024947710/13/11Bridge circuits and their components
532011019361908/11/11Semiconductor electronic components and circuits
542011016954907/14/11Electronic devices and components for high efficiency power circuits
552011014017206/16/11Reverse side engineered iii-nitride devices
562011012754106/02/11Semiconductor heterostructure diodes
572011012131405/26/11Enhancement mode gallium nitride power devices
582011010146605/05/11Package configurations for low emi circuits
592011004952603/03/11Semiconductor devices with field plates
602010028906711/18/10High voltage iii-nitride semiconductor devices
612010025564610/07/10Iii-nitride devices with recessed gates
622010020143908/12/10Iii-nitride devices and circuits
632010007306703/25/10Inductive load power switching circuits
642009026707810/29/09Enhancement mode iii-n hemts
652009014618506/11/09Insulated gate e-mode transistors
662009014577106/11/09Compact electric appliance for providing gas for combustion
672009013404105/28/09Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
682009007224003/19/09Iii-nitride devices with recessed gates
692009007227203/19/09Enhancement mode gallium nitride power devices



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Transphorm, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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