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Transphorm, Inc. patents

Recent patent applications related to Transphorm, Inc.. Transphorm, Inc. is listed as an Agent/Assignee. Note: Transphorm, Inc. may have other listings under different names/spellings. We're not affiliated with Transphorm, Inc., we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm, Inc.-related inventors

Multilevel inverters and their components


Multilevel inverters and their components

Search recent Press Releases: Transphorm, Inc.-related press releases
Count Application # Date Transphorm, Inc. patents (updated weekly) - BOOKMARK this page
12015002155201/22/15Iii-nitride transistor including a p-type depleting layer
22015001616901/15/15Multilevel inverters and their components
32014037791112/25/14Package configurations for low emi circuits
42014037793012/25/14Method of forming electronic components with increased reliability
52014034251211/20/14High voltage iii-nitride semiconductor devices
62014029239510/02/14Gate drivers for circuits based on semiconductor devices
72014026437009/18/14Carbon doping semiconductor devices
82014026445509/18/14Carbon doping semiconductor devices
92014027342209/18/14Method for making semiconductor diodes with low reverse bias currents
102014023182308/21/14Electrodes for semiconductor devices and methods of forming the same
112014023192908/21/14Transistors with isolation regions
122014019742107/17/14Electrode configurations for semiconductor devices
132014016242106/12/14Semiconductor devices with field plates
142014010339904/17/14Gallium nitride power devices
152014010398904/17/14Semiconductor power modules and devices
162014009975704/10/14Iii-n device structures and methods
172014009401004/03/14Method of forming electronic components with increased reliability
182014005460302/27/14Semiconductor heterostructure diodes
192014004884902/20/14Package configurations for low emi circuits
202014004249502/13/14Semiconductor electronic components and circuits
212014001506601/16/14Semiconductor electronic components with integrated current limiters
222014000155701/02/14Semiconductor devices with integrated hole collectors
232013032093912/05/13Inductive load power switching circuits
242013031650211/28/13Enhancement mode iii-n hemts
252013026457810/10/13N-polar iii-nitride transistors
262013024962209/26/13Bridge circuits and their components
272013023425709/12/13Package configurations for low emi circuits
282013022204508/29/13Semiconductor power modules and devices
292013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
302013020043508/08/13Semiconductor devices with field plates
312013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
322013017558007/11/13Gallium nitride power devices
332013014754006/13/13Semiconductor modules and methods of forming the same
342013014018906/06/13Compact electric appliance for providing gas for combustion
352013008828004/11/13High power semiconductor electronic components with increased reliability
362013006262103/14/13Iii-n device structures having a non-insulating substrate
372013005674403/07/13Semiconductor devices with guard rings
382013000961301/10/13Inductive load power switching circuits
392013000969201/10/13Inductive load power switching circuits
402012026764010/25/12Semiconductor heterostructure diodes
412012022331909/06/12Semiconductor diodes with low reverse bias currents
422012022332009/06/12Electrode configurations for semiconductor devices
432012021802508/30/12Electronic components with reactive filters
442012019367708/02/12Iii-n device structures and methods
452012017568007/12/12Enhancement mode gallium nitride power devices
462012015339006/21/12Transistors with isolation regions
472012013297305/31/12Package configurations for low emi circuits
482012012623905/24/12Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
492011024947710/13/11Bridge circuits and their components
502011019361908/11/11Semiconductor electronic components and circuits
512011016954907/14/11Electronic devices and components for high efficiency power circuits
522011014017206/16/11Reverse side engineered iii-nitride devices
532011012754106/02/11Semiconductor heterostructure diodes
542011012131405/26/11Enhancement mode gallium nitride power devices
552011010146605/05/11Package configurations for low emi circuits
562011004952603/03/11Semiconductor devices with field plates
572010028906711/18/10High voltage iii-nitride semiconductor devices
582010025564610/07/10Iii-nitride devices with recessed gates
592010020143908/12/10Iii-nitride devices and circuits
602010007306703/25/10Inductive load power switching circuits
612009026707810/29/09Enhancement mode iii-n hemts
622009014618506/11/09Insulated gate e-mode transistors
632009014577106/11/09Compact electric appliance for providing gas for combustion
642009013404105/28/09Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
652009007224003/19/09Iii-nitride devices with recessed gates
662009007227203/19/09Enhancement mode gallium nitride power devices

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Transphorm, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by