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Transphorm Inc patents


Recent patent applications related to Transphorm Inc. Transphorm Inc is listed as an Agent/Assignee. Note: Transphorm Inc may have other listings under different names/spellings. We're not affiliated with Transphorm Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm Inc-related inventors


Iii-nitride transistor including a iii-n depleting layer

A transistor includes a iii-n layer structure including a iii-n channel layer between a iii-n barrier layer and a iii-n depleting layer, where the iii-n channel layer includes a 2deg channel formed adjacent an interface between the iii-n channel layer and the iii-n barrier layer; a source and a drain, each of which being directly connected to the iii-n channel layer; a gate between the source and the drain, the gate being over the iii-n layer structure, where the iii-n depleting layer includes a first portion that is disposed in a device access region between the gate and the drain; and where the source electrically contacts the first portion of the iii-n depleting layer, and the drain is electrically isolated from the first portion of the iii-n depleting layer.. . ... Transphorm Inc

Paralleling of switching devices for high power circuits

A circuit includes first and second half bridges, a first inductor, a second inductor, and a main inductor. The half bridges each include a high side switch, a low side switch, and a gate driver configured to apply switching signals to the high side switch and the low side switch. ... Transphorm Inc

Switching circuits having ferrite beads

A circuit includes an electronic component package that comprises at least a first lead, a iii-n device in the electronic component package, a gate driver, and a ferrite bead. The iii-n device comprises a drain, gate, and source, where the source is coupled to the first lead. ... Transphorm Inc

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device includes a first semiconductor layer formed on a substrate; a second semiconductor layer and a third semiconductor layer formed on the first semiconductor layer; a fourth semiconductor layer formed on the third semiconductor layer; a gate electrode formed on the fourth semiconductor layer; and a source electrode and a drain electrode formed in contact with the second semiconductor layer. The third semiconductor layer and the fourth semiconductor layer are formed in an area immediately below the gate electrode, the fourth semiconductor layer is formed with a p-type semiconductor material, and the second semiconductor layer and the third semiconductor layer are formed with algan, and the third semiconductor layer has a lower composition ratio of al than that of the second semiconductor layer.. ... Transphorm Inc

Enhancement-mode iii-nitride devices

A iii-n enhancement-mode transistor includes a iii-n structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the iii-n structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. ... Transphorm Inc

Switching circuits having ferrite beads

A circuit includes an electronic component package that comprises at least a first lead, a iii-n device in the electronic component package, a gate driver, and a ferrite bead. The iii-n device comprises a drain, gate, and source, where the source is coupled to the first lead. ... Transphorm Inc

Methods of forming reverse side engineered iii-nitride devices

Group iii-nitride devices are described that include a stack of iii-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2deg channel, a barrier layer and a spacer layer. ... Transphorm Inc








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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Transphorm Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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