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Transphorm Inc patents

Recent patent applications related to Transphorm Inc. Transphorm Inc is listed as an Agent/Assignee. Note: Transphorm Inc may have other listings under different names/spellings. We're not affiliated with Transphorm Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm Inc-related inventors

Search recent Press Releases: Transphorm Inc-related press releases
Count Application # Date Transphorm Inc patents (updated weekly) - BOOKMARK this page
12015013721705/21/15Semiconductor power modules and devices
22015007007603/12/15Bridge circuits and their components
32015005411702/26/15Semiconductor devices with guard rings
42015004186102/12/15Iii-n device structures and methods
52015004186402/12/15Semiconductor diodes with low reverse bias currents
62015002155201/22/15Iii-nitride transistor including a p-type depleting layer
72015001616901/15/15Multilevel inverters and their components
82014037791112/25/14Package configurations for low emi circuits
92014037793012/25/14Method of forming electronic components with increased reliability
102014034251211/20/14High voltage iii-nitride semiconductor devices
112014029239510/02/14Gate drivers for circuits based on semiconductor devices
122014026437009/18/14Carbon doping semiconductor devices
132014026445509/18/14Carbon doping semiconductor devices
142014027342209/18/14Method for making semiconductor diodes with low reverse bias currents
152014023182308/21/14Electrodes for semiconductor devices and methods of forming the same
162014023192908/21/14Transistors with isolation regions
172014019742107/17/14Electrode configurations for semiconductor devices
182014016242106/12/14Semiconductor devices with field plates
192014010339904/17/14Gallium nitride power devices
202014010398904/17/14Semiconductor power modules and devices
212014009975704/10/14Iii-n device structures and methods
222014009401004/03/14Method of forming electronic components with increased reliability
232014005460302/27/14Semiconductor heterostructure diodes
242014004884902/20/14Package configurations for low emi circuits
252014004249502/13/14Semiconductor electronic components and circuits
262014001506601/16/14Semiconductor electronic components with integrated current limiters
272014000155701/02/14Semiconductor devices with integrated hole collectors
282013032093912/05/13Inductive load power switching circuits
292013031650211/28/13Enhancement mode iii-n hemts
302013026457810/10/13N-polar iii-nitride transistors
312013024962209/26/13Bridge circuits and their components
322013023425709/12/13Package configurations for low emi circuits
332013022204508/29/13Semiconductor power modules and devices
342013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
352013020043508/08/13Semiconductor devices with field plates
362013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
372013017558007/11/13Gallium nitride power devices
382013014754006/13/13Semiconductor modules and methods of forming the same
392013014018906/06/13Compact electric appliance for providing gas for combustion
402013008828004/11/13High power semiconductor electronic components with increased reliability
412013006262103/14/13Iii-n device structures having a non-insulating substrate
422013005674403/07/13Semiconductor devices with guard rings
432013000961301/10/13Inductive load power switching circuits
442013000969201/10/13Inductive load power switching circuits
452012026764010/25/12Semiconductor heterostructure diodes
462012022331909/06/12Semiconductor diodes with low reverse bias currents
472012022332009/06/12Electrode configurations for semiconductor devices
482012021802508/30/12Electronic components with reactive filters
492012019367708/02/12Iii-n device structures and methods
502012017568007/12/12Enhancement mode gallium nitride power devices
512012015339006/21/12Transistors with isolation regions
522012013297305/31/12Package configurations for low emi circuits
532012012623905/24/12Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
542011024947710/13/11Bridge circuits and their components
552011019361908/11/11Semiconductor electronic components and circuits
562011016954907/14/11Electronic devices and components for high efficiency power circuits
572011014017206/16/11Reverse side engineered iii-nitride devices
582011012754106/02/11Semiconductor heterostructure diodes
592011012131405/26/11Enhancement mode gallium nitride power devices
602011010146605/05/11Package configurations for low emi circuits
612011004952603/03/11Semiconductor devices with field plates
622010028906711/18/10High voltage iii-nitride semiconductor devices
632010025564610/07/10Iii-nitride devices with recessed gates
642010020143908/12/10Iii-nitride devices and circuits
652010007306703/25/10Inductive load power switching circuits
662009026707810/29/09Enhancement mode iii-n hemts
672009014618506/11/09Insulated gate e-mode transistors
682009014577106/11/09Compact electric appliance for providing gas for combustion
692009013404105/28/09Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
702009007224003/19/09Iii-nitride devices with recessed gates
712009007227203/19/09Enhancement mode gallium nitride power devices

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Transphorm Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by