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Transphorm Inc patents


      
Recent patent applications related to Transphorm Inc. Transphorm Inc is listed as an Agent/Assignee. Note: Transphorm Inc may have other listings under different names/spellings. We're not affiliated with Transphorm Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm Inc-related inventors




Search recent Press Releases: Transphorm Inc-related press releases
Count Application # Date Transphorm Inc patents (updated weekly) - BOOKMARK this page
12016013373705/12/16 Carbon doping semiconductor devices
22016012634205/05/16 Carbon doping semiconductor devices
32016007915403/17/16 Semiconductor modules and methods of forming the same
42016007922303/17/16 Semiconductor power modules and devices
52016007195103/10/16 Enhancement mode iii-n hemts
62016006449503/03/16 Semiconductor devices with integrated hole collectors
72016004294602/11/16 Buffer layer structures suited for iii-nitride devices with foreign substrates
82016004307802/11/16 Semiconductor electronic components with integrated current limiters
92016004321102/11/16 Electrodes for semiconductor devices and methods of forming the same
102016002031301/21/16 Forming enhancement mode iii-nitride devices
112016000642801/07/16 Switching circuits having ferrite beads
122015033314711/19/15 Transistors with isolation regions
132015028778510/08/15 N-polar iii-nitride transistors
142015026311209/17/15 Enhancement-mode iii-nitride devices
152015024944709/03/15 Gate drivers for circuits based on semiconductor devices
162015018789307/02/15 Semiconductor devices with field plates
172015013721705/21/15 Semiconductor power modules and devices
182015007007603/12/15 Bridge circuits and their components
192015005411702/26/15 Semiconductor devices with guard rings
202015004186102/12/15 Iii-n device structures and methods
212015004186402/12/15 Semiconductor diodes with low reverse bias currents
222015002155201/22/15 Iii-nitride transistor including a p-type depleting layer
232015001616901/15/15 Multilevel inverters and their components
242014037791112/25/14 Package configurations for low emi circuits
252014037793012/25/14 Method of forming electronic components with increased reliability
262014034251211/20/14 High voltage iii-nitride semiconductor devices
272014029239510/02/14 Gate drivers for circuits based on semiconductor devices
282014026437009/18/14 Carbon doping semiconductor devices
292014026445509/18/14 Carbon doping semiconductor devices
302014027342209/18/14 Method for making semiconductor diodes with low reverse bias currents
312014023182308/21/14 Electrodes for semiconductor devices and methods of forming the same
322014023192908/21/14 Transistors with isolation regions
332014019742107/17/14 Electrode configurations for semiconductor devices
342014016242106/12/14 Semiconductor devices with field plates
352014010339904/17/14 Gallium nitride power devices
362014010398904/17/14 Semiconductor power modules and devices
372014009975704/10/14 Iii-n device structures and methods
382014009401004/03/14 Method of forming electronic components with increased reliability
392014005460302/27/14 Semiconductor heterostructure diodes
402014004884902/20/14 Package configurations for low emi circuits
412014004249502/13/14 Semiconductor electronic components and circuits
422014001506601/16/14 Semiconductor electronic components with integrated current limiters
432014000155701/02/14 Semiconductor devices with integrated hole collectors
442013032093912/05/13 Inductive load power switching circuits
452013031650211/28/13 Enhancement mode iii-n hemts
462013026457810/10/13 N-polar iii-nitride transistors
472013024962209/26/13 Bridge circuits and their components
482013023425709/12/13 Package configurations for low emi circuits
492013022204508/29/13 Semiconductor power modules and devices
502013021022008/15/13 Methods of forming reverse side engineered iii-nitride devices
512013020043508/08/13 Semiconductor devices with field plates
522013020049508/08/13 Buffer layer structures suited for iii-nitride devices with foreign substrates
532013017558007/11/13 Gallium nitride power devices
542013014754006/13/13 Semiconductor modules and methods of forming the same
552013014018906/06/13 Compact electric appliance for providing gas for combustion
562013008828004/11/13 High power semiconductor electronic components with increased reliability
572013006262103/14/13 Iii-n device structures having a non-insulating substrate
582013005674403/07/13 Semiconductor devices with guard rings
592013000961301/10/13 Inductive load power switching circuits
602013000969201/10/13 Inductive load power switching circuits
612012026764010/25/12 Semiconductor heterostructure diodes
622012022331909/06/12 Semiconductor diodes with low reverse bias currents
632012022332009/06/12 Electrode configurations for semiconductor devices
642012021802508/30/12 Electronic components with reactive filters
652012019367708/02/12 Iii-n device structures and methods
662012017568007/12/12 Enhancement mode gallium nitride power devices
672012015339006/21/12 Transistors with isolation regions
682012013297305/31/12 Package configurations for low emi circuits
692012012623905/24/12 Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
702011024947710/13/11 Bridge circuits and their components
712011019361908/11/11 Semiconductor electronic components and circuits
722011016954907/14/11 Electronic devices and components for high efficiency power circuits
732011014017206/16/11 Reverse side engineered iii-nitride devices
742011012754106/02/11 Semiconductor heterostructure diodes
752011012131405/26/11 Enhancement mode gallium nitride power devices
762011010146605/05/11 Package configurations for low emi circuits
772011004952603/03/11 Semiconductor devices with field plates
782010028906711/18/10 High voltage iii-nitride semiconductor devices
792010025564610/07/10 Iii-nitride devices with recessed gates
802010020143908/12/10 Iii-nitride devices and circuits
812010007306703/25/10 Inductive load power switching circuits
822009026707810/29/09 Enhancement mode iii-n hemts
832009014618506/11/09 Insulated gate e-mode transistors
842009014577106/11/09 Compact electric appliance for providing gas for combustion
852009013404105/28/09 Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
862009007224003/19/09 Iii-nitride devices with recessed gates
872009007227203/19/09 Enhancement mode gallium nitride power devices



ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Transphorm Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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