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Transphorm, Inc. patents

Recent patent applications related to Transphorm, Inc.. Transphorm, Inc. is listed as an Agent/Assignee. Note: Transphorm, Inc. may have other listings under different names/spellings. We're not affiliated with Transphorm, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Transphorm, Inc.-related inventors

Search recent Press Releases: Transphorm, Inc.-related press releases
Count Application # Date Transphorm, Inc. patents (updated weekly) - BOOKMARK this page
12014034251211/20/14High voltage iii-nitride semiconductor devices
22014029239510/02/14Gate drivers for circuits based on semiconductor devices
32014026437009/18/14Carbon doping semiconductor devices
42014026445509/18/14Carbon doping semiconductor devices
52014027342209/18/14Method for making semiconductor diodes with low reverse bias currents
62014023182308/21/14Electrodes for semiconductor devices and methods of forming the same
72014023192908/21/14Transistors with isolation regions
82014019742107/17/14Electrode configurations for semiconductor devices
92014016242106/12/14Semiconductor devices with field plates
102014010339904/17/14Gallium nitride power devices
112014010398904/17/14Semiconductor power modules and devices
122014009975704/10/14Iii-n device structures and methods
132014009401004/03/14Method of forming electronic components with increased reliability
142014005460302/27/14Semiconductor heterostructure diodes
152014004884902/20/14Package configurations for low emi circuits
162014004249502/13/14Semiconductor electronic components and circuits
172014001506601/16/14Semiconductor electronic components with integrated current limiters
182014000155701/02/14Semiconductor devices with integrated hole collectors
192013032093912/05/13Inductive load power switching circuits
202013031650211/28/13Enhancement mode iii-n hemts
212013026457810/10/13N-polar iii-nitride transistors
222013024962209/26/13Bridge circuits and their components
232013023425709/12/13Package configurations for low emi circuits
242013022204508/29/13Semiconductor power modules and devices
252013021022008/15/13Methods of forming reverse side engineered iii-nitride devices
262013020043508/08/13Semiconductor devices with field plates
272013020049508/08/13Buffer layer structures suited for iii-nitride devices with foreign substrates
282013017558007/11/13Gallium nitride power devices
292013014754006/13/13Semiconductor modules and methods of forming the same
302013014018906/06/13Compact electric appliance for providing gas for combustion
312013008828004/11/13High power semiconductor electronic components with increased reliability
322013006262103/14/13Iii-n device structures having a non-insulating substrate
332013005674403/07/13Semiconductor devices with guard rings
342013000961301/10/13Inductive load power switching circuits
352013000969201/10/13Inductive load power switching circuits
362012026764010/25/12Semiconductor heterostructure diodes
372012022331909/06/12Semiconductor diodes with low reverse bias currents
382012022332009/06/12Electrode configurations for semiconductor devices
392012021802508/30/12Electronic components with reactive filters
402012019367708/02/12Iii-n device structures and methods
412012017568007/12/12Enhancement mode gallium nitride power devices
422012015339006/21/12Transistors with isolation regions
432012013297305/31/12Package configurations for low emi circuits
442012012623905/24/12Layer structures for controlling stress of heteroepitaxially grown iii-nitride layers
452011024947710/13/11Bridge circuits and their components
462011019361908/11/11Semiconductor electronic components and circuits
472011016954907/14/11Electronic devices and components for high efficiency power circuits
482011014017206/16/11Reverse side engineered iii-nitride devices
492011012754106/02/11Semiconductor heterostructure diodes
502011012131405/26/11Enhancement mode gallium nitride power devices
512011010146605/05/11Package configurations for low emi circuits
522011004952603/03/11Semiconductor devices with field plates
532010028906711/18/10High voltage iii-nitride semiconductor devices
542010025564610/07/10Iii-nitride devices with recessed gates
552010020143908/12/10Iii-nitride devices and circuits
562010007306703/25/10Inductive load power switching circuits
572009026707810/29/09Enhancement mode iii-n hemts
582009014618506/11/09Insulated gate e-mode transistors
592009014577106/11/09Compact electric appliance for providing gas for combustion
602009013404105/28/09Compact electric appliance providing hydrogen injection for improved performance of internal combustion engines
612009007224003/19/09Iii-nitride devices with recessed gates
622009007227203/19/09Enhancement mode gallium nitride power devices

ARCHIVE: New 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Transphorm, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Transphorm, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by



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