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Triquint Semiconductor Inc patents

Recent patent applications related to Triquint Semiconductor Inc. Triquint Semiconductor Inc is listed as an Agent/Assignee. Note: Triquint Semiconductor Inc may have other listings under different names/spellings. We're not affiliated with Triquint Semiconductor Inc, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Triquint Semiconductor Inc-related inventors

Date Triquint Semiconductor Inc patents (updated weekly) - BOOKMARK this page
04/20/17Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
03/16/17Monolithic wideband trifilar transformer
03/16/17Air gap in baw top metal stack for reduced resistive and acoustic loss
11/10/16Single varactor stack with low second-harmonic generation
08/25/16Dual-series varactor epi
08/18/16Power package lid
06/02/16Package for high-power semiconductor devices
05/12/16Dual stack varactor
04/21/16Power limiter
03/17/16Compound varactor
02/18/16Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
01/21/16Methods, systems, and apparatuses for temperature compensated surface acoustic wave device
11/19/15Varactor diode with heterostructure
11/19/15Enclosure for a multi-channel modulator driver
11/12/15Dual stack varactor
10/15/15Clock generation circuit with dual phase-locked loops
09/24/15Low noise amplifier drain switch circuit
09/10/15Bias circuit for a high power radio frequency switching device
08/06/15Electrostatic discharge protection device
08/06/15Field effect transistor switching circuit
07/16/15Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
07/16/15Doped gallium nitride high-electron mobility transistor
07/16/15Passive feedback path for pre-distortion in power amplifiers
04/30/15Advanced grounding scheme
04/16/15Package for high-power semiconductor devices
04/02/15Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers
03/26/15Electrostatic discharge (esd) circuitry
03/05/15Bias-boosting bias circuit for radio frequency power amplifier
02/05/15Split biased radio frequency power amplifier with enhanced linearity
12/25/14Transformer for monolithic microwave integrated circuits
09/18/14Border ring mode suppression in solidly-mounted bulk acoustic wave resonator
09/11/14Acoustic wave device
08/21/14Package for high-power semiconductor devices
08/14/14Body-biased switching device
07/24/14Preform including a groove extending to an edge of the preform
07/17/14Switching device with resistive divider
07/03/14Radio frequency switch circuit
05/29/14Group iii-nitride-based transistor with gate dielectric including a fluoride - or chloride- based compound
04/17/14Flip-chip packaging techniques and configurations
04/10/14Bulk acoustic wave resonator with means for suppression of pass-band ripple in bulk acoustic wave filters
02/20/14Switching device with non-negative biasing
01/02/14Group iii-nitride transistor using a regrown structure
01/02/14Body-contacted partially depleted silicon on insulator transistor
12/19/13Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in baw resonators and filters
12/05/13In-situ barrier oxidation techniques and configurations
11/28/13Group iii-nitride transistor with charge-inducing layer
11/21/13Thermal spreader having graduated thermal expansion parameters
10/31/13Power amplifier with fast loadline modulation
10/03/13Radio frequency power amplifier with low dynamic error vector magnitude
09/12/13Flip-chip packaging techniques and configurations
06/27/13Mixer with high second-order and third-order intercept point
06/06/13Enclosure for a multi-channel modulator driver
05/16/13Device structure including high-thermal-conductivity substrate
05/02/13High electron mobility transistor structure and method
05/02/13High coupling, low loss saw filter and associated method
05/02/13Temperature compensation of acoustic resonators in the electrical domain
04/25/13Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors
04/11/13High reliability wafer level package and manufacturing method
11/29/12Regrown shottky structures for gan hemt devices
11/22/12Complementary metal-oxide semiconductor direct current to direct current converter
11/08/12Flip-chip power amplifier and impedance matching network
09/27/12Quadrature lattice matching network
09/20/12Electrostatic discharge protection circuit for compound semiconductor devices and circuits
08/09/12Ladder quadrature hybrid
07/26/12Linear voltage-controlled current source
Patent Packs
06/28/12Acoustic wave guide device and minimizing trimming effects and piston mode instabilities
06/28/12Logic circuit without enhancement mode transistors
06/21/12High electron mobility transistor with indium gallium nitride layer
04/19/12Wafer level package and manufacturing method using photodefinable polymer for enclosing acoustic devices
04/05/12Sheet-molded chip-scale package
01/12/12Balanced switch
12/01/11Overdrive protection circuit
12/01/11Protection circuit for radio frequency power amplifier
10/13/11Voltage regulator with control loop for avoiding hard saturation
10/06/11High electron mobility transistor with recessed barrier layer
08/25/11Temperature compensated surface acoustic wave device and method having buried interdigital transducers for providing an improved insertion loss and quality factor
08/04/11Automatic calibration circuit
06/30/11Input-power overload-protection circuit
03/24/11Piston mode acoustic wave device and method providing a high coupling factor
10/28/10Voltage regulator circuit
Patent Packs
10/14/10Field effect transistor having a plurality of field plates
10/14/10Field-plated transistor including feedback resistor
08/05/10Power amplifier with reconfigurable direct current coupling
05/20/10Package including proximately-positioned lead frame
05/13/10Radio frequency amplification circuit utilizing variable voltage generator
03/25/10Heteroepitaxial gallium nitride-based device formed on an off-cut substrate
11/19/09Heterojunction bipolar transistor device with electrostatic discharge ruggedness

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Triquint Semiconductor Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Triquint Semiconductor Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by