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Ultratech Inc
Ultratech Inc_20131212

Ultratech Inc patents


Recent patent applications related to Ultratech Inc. Ultratech Inc is listed as an Agent/Assignee. Note: Ultratech Inc may have other listings under different names/spellings. We're not affiliated with Ultratech Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | Ultratech Inc-related inventors


Quartz crystal microbalance assembly for ald systems

A quartz crystal microbalance assembly includes a lid of a reactor chamber of an ALD system. A QCM crystal is disposed in a bottom section of a central cavity formed in the lid. A central portion of a front surface of the QCM crystal is exposed to an interior of... Ultratech Inc

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the... Ultratech Inc

Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the... Ultratech Inc

Pe-ald methods with reduced quartz-based contamination

Methods of performing PE-ALD on a substrate with reduced quartz-based contamination are disclosed. The methods include inductively forming in a quartz plasma tube a hydrogen-based plasma from a feed gas that consists essentially of either hydrogen and nitrogen or hydrogen, argon and nitrogen. The nitrogen constitutes 2 vol % or... Ultratech Inc

Method and forming device quality gallium nitride layers on silicon substrates

Atomic Layer Deposition (ALD) is used for heteroepitaxial film growth at reaction temperatures ranging from 80-400° C. The substrate and film materials are preferably matched to take advantage of Domain Matched Epitaxy (DME). A laser annealing system is used to thermally anneal deposition layer after deposition by ALD. In preferred... Ultratech Inc

Improved through silicon via

Through via holes are prepared for metallization using ALD and PEALD processing. Each via is coated with a titanium nitride barrier layer having a thickness ranging from 20 to 200 Å. A ruthenium sealing layer is formed over the titanium nitride barrier layer wherein the sealing layer is formed without... Ultratech Inc

Full-wafer inspection methods having selectable pixel density

Full-wafer inspection methods for a semiconductor wafer are disclosed. One method includes making a measurement of a select measurement parameter simultaneously over measurement sites of the entire surface of the semiconductor wafer at a maximum measurement-site pixel density ρmax to obtain measurement data, wherein the total number of measurement-site pixels... Ultratech Inc

Vapor deposition systems and methods

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.... Ultratech Inc

High-efficiency line-forming optical defect annealing and dopant activation

High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO2-based line-forming system configured to form at a wafer surface a first line image having between 2000 W and 3000 W of optical power. The line image is scanned over the wafer... Ultratech Inc

Systems and methods of characterizing process-induced wafer shape for process control using cgs interferometry

Systems and methods of characterizing wafer shape using coherent gradient sensing (CGS) interferometry are disclosed. The method includes measuring at least 3×106 data points on a wafer surface using a CGS system to obtain a topography map of the wafer surface. The data are collected on a wafer for pre-processing... Ultratech Inc

Vapor delivery system

An improved ALD system usable for low vapor pressure liquid and sold precursors. The ALD system includes a precursor container and inert gas delivery elements configured to increase precursor vapor pressure within a precursor container by injecting an inert gas pulse into the precursor container while a precursor pulse is... Ultratech Inc

Methods of forming an ald-inhibiting layer using a self-assembled monolayer

Methods of forming an ALD-inhibiting layer using a layer of SAM molecules include providing a metalized substrate having a metal M and an oxide layer of the metal M. A reduction gas that includes a metal Q is used to reduce the oxide layer of the metal M, leaving a... Ultratech Inc

High-throughput multichamber atomic layer deposition systems and methods

ALD systems and methods having high throughput are disclosed. The ALD systems and methods employ a process chamber that has multiple chamber sections defined by interior chamber dividers. The wafers to be processed are supported on a platen that rotates beneath a process chamber housing with a small gap therebetween... Ultratech Inc

Laser-assisted atomic layer deposition of 2d metal chalcogenide films

Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form... Ultratech Inc

Plasma-enhanced atomic layer deposition system with rotary reactor tube

Systems and methods for coating particles using PE-ALD and a rotary reactor tube are disclosed. The reactor tube is part of a reactor tube assembly that can rotate and move axially so that it is operably disposed relative to a plasma-generating device. The plasma-generating device has an active state that... Ultratech Inc

Masking methods for ald processes for electrode-based devices

Masking methods for atomic-layer-deposition processes for electrode-based devices are disclosed, wherein solder is used as a masking material. The methods include exposing electrical contact members of an electrical device having an active device region and a barrier layer formed by atomic layer deposition. This includes depositing solder elements on the... Ultratech Inc

High-efficiency line-forming optical systems and methods using a serrated spatial filter

High-efficiency line-forming optical systems and methods that employ a serrated aperture are disclosed. The line-forming optical system includes a laser source, a beam conditioning optical system, a first aperture device, and a relay optical system that includes a second aperture device having the serrated aperture. The serrated aperture is defined... Ultratech Inc

Plasma atomic layer deposition system and method

A gas deposition chamber includes a volume expanding top portion and a substantially constant volume cylindrical middle portion and optionally a volume reducing lower portion. An aerodynamically shaped substrate support chuck is disposed inside the gas deposition chamber with a substrate support surface positioned in the cylindrical middle portion. The... Ultratech Inc








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