Ulvac Inc patents

Sputtering apparatus

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate W to be processed so... Ulvac Inc

Method of depositing aluminum oxide film, forming the same, and sputtering apparatus

There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to... Ulvac Inc

Contact type power feeding apparatus

There is provided a contact type power feeding apparatus in which, even if a brush Br disposed in a space between the axis body and the cylinder body that are disposed concentric with each other wears out as a result of sliding, contact can be surely secured between the brush... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma... Ulvac Inc

Rotary cathode unit for magnetron sputtering apparatus

A magnet unit Mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line... Ulvac Inc

Mixing device

[Solving Means] A mixing device 1 is configured to be attachable to a multi-well plate 30 and includes a casing 100, a plurality of stirrers 11, a plurality of motors 12 as a drive portion, and a mounting portion 16. The casing 100 includes a main surface portion 101 facing... Ulvac Inc

Substrate processing device

A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including... Ulvac Inc

Deep ultraviolet led and manufacturing the same

A deep ultraviolet LED with a design wavelength of λ is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light... Ulvac Inc

Chucking device and vacuum processing apparatus

The present invention provides a technology for reducing the attractive force of a chucking device at its surface contacting an object to be chucked to thereby eliminate or minimize the generation of dust when chucking and removing the object, and to enable control for making the attractive force of the... Ulvac Inc

Plasma processing device

A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in... Ulvac Inc

Sputtering apparatus and discriminating state thereof

A method of discriminating a state of a sputtering apparatus in which, by sputtering a target (2), a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the... Ulvac Inc

Cathode assembly

A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target... Ulvac Inc

Target assembly

A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the... Ulvac Inc

Target assembly

A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together... Ulvac Inc

Rf sputtering apparatus and sputtering method

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing... Ulvac Inc

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a plasma generation unit that generates a plasma from a process gas in a plasma generation space in which a substrate is placed. The substrate processing apparatus also includes a cooling unit opposed to the substrate with a cooling space located in between. The cooling... Ulvac Inc

Substrate processing device

A substrate processing apparatus includes a sputter chamber, two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering, and a transport mechanism that transports the substrate along a transport passage located in the sputter chamber. One of the two... Ulvac Inc

Insulator target

There is provided an insulator target which, when mounted on a sputtering apparatus and supplied with AC power, is capable of preventing the discharging from occurring in a clearance between a shield and the target. The insulator target for the sputtering apparatus according to this invention, around which is disposed... Ulvac Inc

Plasma etching method, plasma etching device, plasma processing method, and plasma processing device

A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate, and a second step of etching the substrate... Ulvac Inc

Plasma treatment device and wafer transfer tray

A plasma treatment apparatus includes a wafer transfer tray having a first surface and a second surface opposite to the first surface and configured to hold a wafer on the first surface, a cooling unit configured to cool the wafer transfer tray, a conductive supporter configured to support the second... Ulvac Inc

Multi-layered film and manufacturing the same

A multi-layered film includes an electroconductive layer made of platinum (Pt), a seed layer including lanthanum (La), nickel (Ni), and oxygen (O), and a dielectric layer being preferentially oriented in a c-axis direction, which are at least sequentially disposed on a main surface of a substrate made of silicon.... Ulvac Inc

Multi-layered film, manufacturing the same, and manufacturing apparatus of the same

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper... Ulvac Inc

Method of manufacturing multi-layered film and multi-layered film

A method of manufacturing a multi-layered film at least includes: a step A of forming an electroconductive layer on a substrate; a step B of forming a seed layer so as to coat the electroconductive layer; and a step C of forming a dielectric layer so as to coat the... Ulvac Inc

Pzt thin film laminate and manufacturing method thereof

The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer... Ulvac Inc

Method for forming positive electrode for thin film lithium-ion rechargeable battery, positive electrode for thin film lithium-ion rechargeable battery, and thin film lithium-ion rechargeable battery

A method for forming a positive electrode for a thin film lithium-ion rechargeable battery includes forming a positive electrode power collection layer, forming a first positive electrode active material layer by covering the positive electrode power collection layer with a first positive electrode active material that contains lithium cobalt oxide,... Ulvac Inc

Transfer device and vacuum apparatus

... Ulvac Inc

Touch panel, manufacturing touch panel, and optical thin film

A touch panel of the present invention includes a touch panel substrate, a cover substrate provided to overlap the touch panel, and a connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and is provided between the touch panel substrate and... Ulvac Inc

Method for forming carbon electrode film, carbon electrode, and manufacturing phase change memory element

To provide a carbon electrode film forming method by which the surface roughness and the resistivity can be lowered to a predetermined value or less. A carbon electrode film forming method according to an embodiment of the present invention includes maintaining an argon gas atmosphere of 0.3 Pa to 1.2... Ulvac Inc

Method of manufacturing multi-layered film, and multi-layered film

A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.... Ulvac Inc

Variable-resisance element and production method therefor

To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. The upper electrode layer 5 is formed... Ulvac Inc

Vacuum melting and casting apparatus

A hermetically sealed container is equipped inside thereof with: a melting furnace; a cooling roll for subjecting the molten metal tapped from the melting furnace to primary cooling to form a casting; and a rotatable cooling drum which receives the casting formed by the cooling roll and which subjects the... Ulvac Inc

Film forming apparatus and film forming method

Provided is a film forming apparatus in which a thin film can be formed with a good coverage on the inner surface of a hole with high aspect ratio by preventing the negative electric charges from getting concentrated on the substrate edge portion at the time of etching processing. The... Ulvac Inc

Lithium-sulfur secondary battery

Provided is a lithium-sulfur secondary battery capable of suppressing diffusion of a polysulfide eluded into an electrolytic solution into a negative electrode and capable of suppressing lowering of a charge-discharge capacity. In the lithium-sulfur secondary battery of this invention, including a positive electrode P containing a positive electrode active material... Ulvac Inc