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Ulvac Inc patents


Recent patent applications related to Ulvac Inc. Ulvac Inc is listed as an Agent/Assignee. Note: Ulvac Inc may have other listings under different names/spellings. We're not affiliated with Ulvac Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | Ulvac Inc-related inventors


Magnetron sputtering apparatus

The magnetron sputtering apparatus sm has: a vacuum chamber; and a cathode unit c detachably mounted on the vacuum chamber. The cathode unit has: a target which is disposed to face an inside of the vacuum chamber; and a magnet unit disposed to that side of the target which is opposite to a sputtering surface, thereby generating a leakage magnetic field on a side of the sputtering surface. ... Ulvac Inc

Mixing device

Provided is a mixing device that is configured to install therein a multi-well plate including a plurality of wells capable of containing matter to be mixed and includes mixing mechanisms each of which mixes the matter to be mixed with a motor and is provided for each of the wells. The mixing mechanisms each includes a first rotator that is connected to the motor and rotates due to activation of the motor, a mixing rod that mixes the matter to be mixed, a second rotator that supports the mixing rod, a magnetic coupling mechanism that magnetically couples the first rotator to the second rotator, and a seal ring that surrounds an opening of the well and is capable of closing the well together with the second rotator.. ... Ulvac Inc

Method of depositing aluminum oxide film, method of forming the same, and sputtering apparatus

There are provided a method of depositing an aluminum oxide film, a method of forming the same, and a sputtering apparatus, which are capable of depositing an aluminum oxide film that can be crystallized at a low-temperature annealing process. In the method of depositing an aluminum oxide film according to this invention, a target made of aluminum oxide and a substrate w to be processed are disposed inside a vacuum chamber, a rare gas is introduced into the vacuum chamber, and hf power is applied to the target to thereby deposit by sputtering the aluminum oxide film on the surface of the substrate, the pressure in the vacuum chamber during film deposition is set to a range of 1.6 through 2.1 pa.. ... Ulvac Inc

Sputtering apparatus

There is provided a sputtering apparatus which is capable of forming, with good uniformity of film thickness distribution, an insulator film having further improved crystallinity. Inside a vacuum chamber in which is provided an insulator target, there is disposed a stage for holding a substrate w to be processed so as to face the insulator target. ... Ulvac Inc

Contact type power feeding apparatus

There is provided a contact type power feeding apparatus in which, even if a brush br disposed in a space between the axis body and the cylinder body that are disposed concentric with each other wears out as a result of sliding, contact can be surely secured between the brush and the axis body as well as the cylinder body, thereby efficiently causing electric current to flow between the two. A brush br has first brush pieces each having an inner wall surface to make surface-contact with an outer peripheral surface of the axis body; and second brush pieces each having an outer wall surface to make a surface-contact with an inner peripheral surface of the cylinder body. ... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.. ... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.. ... Ulvac Inc

Binary metal oxide based interlayer for high mobility channels

A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.. ... Ulvac Inc

Rotary cathode unit for magnetron sputtering apparatus

A magnet unit mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line of the target so as to close like a racetrack shape. The magnet unit is constituted into separate parts of: a first part which respectively forms a corner portion of the racetrack shape at both ends, in the direction of the generating line, of the target; a second part which is respectively disposed on the inside, as seen in the direction of the generating line, of the target, adjacent to the first part; and a third part which is positioned between the second parts.. ... Ulvac Inc

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Substrate processing device

A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. ... Ulvac Inc

Combined reactive gas species for high-mobility channel passivation

A technique relates to in-situ cleaning of a high-mobility substrate. Alternating pulses of a metal precursor and exposure to a plasma of a gas or gas mixture are applied. ... Ulvac Inc

Chucking device and vacuum processing apparatus

The present invention provides a technology for reducing the attractive force of a chucking device at its surface contacting an object to be chucked to thereby eliminate or minimize the generation of dust when chucking and removing the object, and to enable control for making the attractive force of the chucking device uniform. The chucking device of the present invention includes: a main body portion 50 constituted by a dielectric and pairs of chucking electrodes 11 and 12 for attracting and holding a substrate 10, the pairs of chucking electrodes 11 and 12 being provided in the dielectric, each of the pairs of chucking electrodes 11 and 12 being opposite in polarity; and a plurality of conductive films 51 arranged on a part of the main body portion 50 on the chucking side relative to the pairs of chucking electrodes 11 and 12 in such a manner as to respectively span across a positive electrode 11a and a negative electrode 11b constituting the pair of chucking electrodes 11 and across a positive electrode 12a and a negative electrode 12b constituting the pair of chucking electrodes 12.. ... Ulvac Inc

Cathode assembly

A cathode assembly is provided in which, while preventing the occurrence of abnormal electric discharging between a projected portion of a backing plate and a side surface of a target, particles can be prevented from being generated. The cathode assembly for a sputtering apparatus of this invention has: a target made of an insulating material; a backing plate bonded to one surface of the target; and, where such a side of the backing plate as is on the side of the target is defined as a lower side, an annular shield plate disposed to lie opposite to the lower side of that projected portion of the backing plate which is projected outward beyond an outer peripheral end of the target. ... Ulvac Inc

10/05/17 / #20170283940

Sputtering apparatus and method of discriminating state thereof

A method of discriminating a state of a sputtering apparatus in which, by sputtering a target (2), a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. ... Ulvac Inc

09/21/17 / #20170268097

Target assembly

A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. ... Ulvac Inc

08/10/17 / #20170229296

Target assembly

A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (sm). ... Ulvac Inc

07/27/17 / #20170213706

Rf sputtering apparatus and sputtering method

Provided is a rf sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The rf sputtering apparatus sm, according to this invention, in which rf power is applied in vacuum to a target to thereby perform film forming processing on one surface (wa) of the substrate (w) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. ... Ulvac Inc

07/20/17 / #20170204510

Substrate processing device

A substrate processing apparatus includes a sputter chamber, two targets located in the sputter chamber to form thin films on two film formation surfaces of a substrate through sputtering, and a transport mechanism that transports the substrate along a transport passage located in the sputter chamber. One of the two targets is located at one side of the transport passage opposed to one of the two film formation surfaces of the substrate at a front side with respect to a direction in which the substrate is transported. ... Ulvac Inc

07/20/17 / #20170204509

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a plasma generation unit that generates a plasma from a process gas in a plasma generation space in which a substrate is placed. The substrate processing apparatus also includes a cooling unit opposed to the substrate with a cooling space located in between. ... Ulvac Inc

06/22/17 / #20170178875

Insulator target

There is provided an insulator target which, when mounted on a sputtering apparatus and supplied with ac power, is capable of preventing the discharging from occurring in a clearance between a shield and the target. The insulator target for the sputtering apparatus according to this invention, around which is disposed a shield at the time of assembling the insulator target on the sputtering apparatus, is made up of: a plate-shaped target material to be enclosed by the shield; and, suppose that one surface of the target material is defined as a sputtering surface to be subjected to sputtering, an annular supporting material coupled to an outer peripheral portion of the opposite surface of the target material. ... Ulvac Inc

06/15/17 / #20170170047

Plasma treatment device and wafer transfer tray

A plasma treatment apparatus includes a wafer transfer tray having a first surface and a second surface opposite to the first surface and configured to hold a wafer on the first surface, a cooling unit configured to cool the wafer transfer tray, a conductive supporter configured to support the second surface of the wafer transfer tray, and a double-surface electrostatic attractor configured to electrostatically attract the wafer to the first surface of the wafer transfer tray and electrostatically attract the supporter to the second surface of the wafer transfer tray.. . ... Ulvac Inc

06/15/17 / #20170169997

Plasma etching method, plasma etching device, plasma processing method, and plasma processing device

A plasma etching method includes a first step of attracting a substrate onto a monopolar electrostatic chuck in a first plasma, which is a plasma of a noble gas, and stopping generation of the first plasma after the attracting of the substrate, and a second step of etching the substrate in a second plasma, which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma after the etching of the substrate. In the first step, the generation of the first plasma is stopped when a positive voltage is applied from the monopolar electrostatic chuck to the substrate. ... Ulvac Inc

05/18/17 / #20170141289

Multi-layered film, method of manufacturing the same, and manufacturing apparatus of the same

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.. ... Ulvac Inc

05/11/17 / #20170133581

Method of manufacturing multi-layered film and multi-layered film

A method of manufacturing a multi-layered film at least includes: a step a of forming an electroconductive layer on a substrate; a step b of forming a seed layer so as to coat the electroconductive layer; and a step c of forming a dielectric layer so as to coat the seed layer. In the step b, a compound including strontium (sr), ruthenium (ru), and oxygen (o) is formed as the seed layer by a sputtering method. ... Ulvac Inc

04/13/17 / #20170104147

Pzt thin film laminate and manufacturing method thereof

The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a pzt thin film by sputtering, without using a conventional seed layer. The present invention provides a pzt thin film laminate including: a si substrate 10; a tiox layer 4 serving as a platinum-adhesion layer on the si substrate 10; a pt electrode layer 5 on the tiox layer 4; a ti thin film layer 6 on the pt electrode layer 5; and a pzt thin film layer 7 on the ti thin film layer 6. ... Ulvac Inc

03/16/17 / #20170077493

Method for forming positive electrode for thin film lithium-ion rechargeable battery, positive electrode for thin film lithium-ion rechargeable battery, and thin film lithium-ion rechargeable battery

A method for forming a positive electrode for a thin film lithium-ion rechargeable battery includes forming a positive electrode power collection layer, forming a first positive electrode active material layer by covering the positive electrode power collection layer with a first positive electrode active material that contains lithium cobalt oxide, forming a second positive electrode active material layer that has a thickness of 20 nm or greater and 60 nm or less by covering the first positive electrode active material layer with a second positive electrode active material that contains aluminum and lithium cobalt oxide, and heating a lamination body that includes the positive electrode power collection layer, the first positive electrode active material layer, and the second positive electrode active material layer.. . ... Ulvac Inc

03/02/17 / #20170060284

Touch panel, method of manufacturing touch panel, and optical thin film

A touch panel of the present invention includes a touch panel substrate, a cover substrate provided to overlap the touch panel, and a connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and is provided between the touch panel substrate and the cover substrate in an area other than a display area.. . ... Ulvac Inc

02/23/17 / #20170051396

Method for forming carbon electrode film, carbon electrode, and method for manufacturing phase change memory element

To provide a carbon electrode film forming method by which the surface roughness and the resistivity can be lowered to a predetermined value or less. A carbon electrode film forming method according to an embodiment of the present invention includes maintaining an argon gas atmosphere of 0.3 pa to 1.2 pa inclusive inside a chamber. ... Ulvac Inc

01/19/17 / #20170018702

Method of manufacturing multi-layered film, and multi-layered film

A method of manufacturing a multi-layered film includes: forming an electroconductive layer on a substrate; forming a seed layer including an oxidative product having a perovskite structure so as to coat the electroconductive layer by a sputtering method; and forming a dielectric layer so as to coat the seed layer.. . ... Ulvac Inc

01/12/17 / #20170012197

Variable-resisance element and production method therefor

To provide a low-cost variable-resistance element and a production method therefor. According to an embodiment of the present invention, there is provided a variable-resistance element 1 including a lower electrode layer 3, an upper electrode layer 5, and an oxide semiconductor layer 4. ... Ulvac Inc

01/05/17 / #20170005312

Lithium-sulfur secondary battery

Provided is a lithium-sulfur secondary battery capable of suppressing diffusion of a polysulfide eluded into an electrolytic solution into a negative electrode and capable of suppressing lowering of a charge-discharge capacity. In the lithium-sulfur secondary battery of this invention, including a positive electrode p containing a positive electrode active material containing sulfur, a negative electrode n containing a negative electrode active material containing lithium, and a separator s disposed between the positive electrode and the negative electrode to hold an electrolytic solution l, a polymer nonwoven fabric f containing a sulfonic group is disposed at least one of between the separator and the positive electrode and between the separator and the negative electrode.. ... Ulvac Inc

01/05/17 / #20170004995

Film forming apparatus and film forming method

Provided is a film forming apparatus in which a thin film can be formed with a good coverage on the inner surface of a hole with high aspect ratio by preventing the negative electric charges from getting concentrated on the substrate edge portion at the time of etching processing. The film forming apparatus is provided with: a vacuum chamber in which a target is disposed; a stage for holding a substrate inside the vacuum chamber; a first electric power for applying predetermined electric power to the target; and a second electric power for applying ac power to the stage. ... Ulvac Inc

01/05/17 / #20170001239

Vacuum melting and casting apparatus

A hermetically sealed container is equipped inside thereof with: a melting furnace; a cooling roll for subjecting the molten metal tapped from the melting furnace to primary cooling to form a casting; and a rotatable cooling drum which receives the casting formed by the cooling roll and which subjects the casting to secondary cooling. The cooling drum has: a tubular member elongated in one longitudinal direction and having a receiving opening which is formed to open on one side of the tubular member to receive therein the casting, and a discharge opening which is formed to open on an opposite side of the tubular member to discharge the casting that has been subjected to the secondary cooling; and a transfer means for transferring the casting received from the receiving opening toward the discharge opening in response to the rotation of the tubular member.. ... Ulvac Inc








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