Real Time Touch



new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




Real Time Touch

Unisantis Electronics Singapore Pte Ltd patents


Recent patent applications related to Unisantis Electronics Singapore Pte Ltd. Unisantis Electronics Singapore Pte Ltd is listed as an Agent/Assignee. Note: Unisantis Electronics Singapore Pte Ltd may have other listings under different names/spellings. We're not affiliated with Unisantis Electronics Singapore Pte Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | Unisantis Electronics Singapore Pte Ltd-related inventors


Method for producing semiconductor device

A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a semiconductor substrate; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device and semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a first insulating film around the fin-shaped semiconductor layer. A first contact is on the fin-shaped semiconductor layer, where the first contact is metal contact. A first gate insulating film is around the first contact and a... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a pillar-shaped semiconductor layer formed on a planar semiconductor layer, a first insulator surrounding the pillar-shaped semiconductor layer, a first gate surrounding the first insulator and made of a metal having a first work function, a second gate surrounding the first insulator and made of a... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a pillar-shaped semiconductor layer formed on a substrate; a first insulator surrounding the pillar-shaped semiconductor layer; a first gate surrounding the first insulator and made of a metal having a first work function; a second gate surrounding the first insulator and made of a metal having... Unisantis Electronics Singapore Pte Ltd

Pillar-shaped semiconductor memory device and producing the same

An SRAM includes two Si pillars on a substrate. In the Si pillars, inverter circuits are formed. The inverter circuits include drive N-channel SGTs each including first and second N+ layers functioning as a source and a drain, and load SGTs each including first and second P+ layers functioning as... Unisantis Electronics Singapore Pte Ltd

Method for producing pillar-shaped semiconductor device

A method for producing a pillar-shaped semiconductor device includes forming, above a NiSi layer serving as a lower wiring conductor layer and connecting to an N+ layer of an SGT formed within a Si pillar, a first conductor W layer that extends through a NiSi layer serving as an upper... Unisantis Electronics Singapore Pte Ltd

Method for producing pillar-shaped semiconductor memory device

A method for producing a pillar-shaped semiconductor memory device includes forming a mask on a semiconductor substrate and etching to form a semiconductor pillar on the semiconductor substrate. A tunnel insulating layer is formed and a data charge storage insulating layer is formed so as to surround the tunnel insulating... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a semiconductor device includes depositing an oxide film containing an impurity having a first conductivity type on a substrate. A nitride film and an oxide film containing an impurity having a second conductivity type different from the first conductivity type are deposited. The oxide film having... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate, and a first pillar-shaped semiconductor layer on the semiconductor substrate. The first pillar-shaped semiconductor layer including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

An SGT is produced by forming a first insulating film around a fin-shaped semiconductor layer, forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped layer, forming a second insulating film, a polysilicon gate electrode covering the second insulating film, and a polysilicon gate line, forming a diffusion... Unisantis Electronics Singapore Pte Ltd

Method for producing a semiconductor device

A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a substrate, forming a first insulating film around the fin-shaped semiconductor layer, and a first metal film is formed around the first insulating film. A pillar-shaped semiconductor layer is formed on the fin-shaped semiconductor layer and... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a first metal film around the first insulating film. A pillar-shaped semiconductor layer is on the fin-shaped semiconductor layer, and a gate insulating film is around the pillar-shaped semiconductor layer. A gate... Unisantis Electronics Singapore Pte Ltd

Sgt-including pillar-shaped semiconductor device and producing the same

A first contact hole is formed so as to extend to a NiSi layer as a lower wiring conductor layer connecting to an N+ layer of an SGT formed within a Si pillar, and so as to extend through a NiSi layer as an upper wiring conductor layer connecting to... Unisantis Electronics Singapore Pte Ltd

Semiconductor device with surrounding gate transistor (sgt)

An SGT production method includes a first step of forming a fin-shaped semiconductor layer and a first insulating film; a second step of forming a second insulating film, depositing a first polysilicon, planarizing the first polysilicon, forming a third insulating film, forming a second resist, and etching the third insulating... Unisantis Electronics Singapore Pte Ltd

Pillar-shaped semiconductor memory device and producing the same

An SRAM includes three Si pillars. In upper parts of the Si pillars, a first load P-channel, a first driver N-channel, and a first selection N-channel are formed, and in lower parts of the Si pillars, a second load P-channel, a second driver N-channel, and a second selection N-channel are... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer and a first dummy gate; a third step of forming a second dummy gate;... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a memory device includes depositing a second interlayer insulating film on a substrate, forming contact holes, and depositing a second metal and a nitride film. The second metal and the nitride film are removed to form pillar-shaped nitride layers, and to form lower electrodes surrounding the... Unisantis Electronics Singapore Pte Ltd

Method for producing an sgt-including semiconductor device

A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a memory device and semiconductor device includes forming pillar-shaped phase change layers and lower electrodes in two or more rows and two or more columns on a semiconductor substrate. A reset gate insulating film is formed that surrounds the pillar-shaped phase change layers and the lower... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a first pillar-shaped semiconductor layer in which a second first-conductivity-type semiconductor layer, a first body region, a third first-conductivity-type semiconductor layer, a fourth first-conductivity-type semiconductor layer, a second body region, a fifth first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a third body region, and a... Unisantis Electronics Singapore Pte Ltd

Method for producing a pillar-shaped semiconductor device

A method for producing a semiconductor device includes forming a semiconductor-pillar on a substrate and forming a laminated-structure of at least two composite layers, each including a metal layer and a semiconductor layer in contact with the metal layer, the semiconductor layer containing donor or acceptor atoms, and two interlayer... Unisantis Electronics Singapore Pte Ltd

Semiconductor device and producing a semiconductor device

A semiconductor device includes first pillar-shaped silicon layers, a first gate insulating film formed around the first pillar-shaped silicon layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed... Unisantis Electronics Singapore Pte Ltd

Semiconductor device and producing a semiconductor device

A semiconductor device includes first pillar-shaped semiconductor layers, a first gate insulating film formed around the first pillar-shaped semiconductor layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed... Unisantis Electronics Singapore Pte Ltd

Semiconductor device having fin-shaped semiconductor layer

An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask formed from a third insulating film; a third... Unisantis Electronics Singapore Pte Ltd

Semiconductor device having fin-shaped semiconductor layer

An SGT production method includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film; a second step of forming a pillar-shaped semiconductor layer, a first dummy gate, and a first hard mask formed from a third insulating film; a third... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a semiconductor device includes forming a first insulating film around a fin-shaped semiconductor layer and forming a pillar-shaped semiconductor layer and forming a second diffusion layer in an upper portion of the fin-shaped semiconductor layer and a lower portion of the pillar-shaped semiconductor layer. A metal-semiconductor... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device and semiconductor device

A semiconductor device includes a pillar-shaped semiconductor layer and a first gate insulating film around the pillar-shaped semiconductor layer. A metal gate electrode is around the first gate insulating film and a metal gate line is connected to the gate electrode. A second gate insulating film is around a sidewall... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a planar interconnection layer formed on a substrate and made of a semiconductor, a first pillar-shaped semiconductor layer formed on the interconnection layer, a semiconductor-metal compound layer formed so as to cover the entire upper surface of the interconnection layer except for a bottom portion of... Unisantis Electronics Singapore Pte Ltd

Method of producing a semiconductor device

A semiconductor device includes four or more first memory cells arranged on a row, the first memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film formed around the first pillar-shaped semiconductor layer, a first gate line formed around the first gate insulating film, and a... Unisantis Electronics Singapore Pte Ltd

Method for manufacturing an sgt-including semiconductor device

A method for manufacturing a semiconductor device includes forming an SGT in a semiconductor pillar on a semiconductor substrate and forming a wiring semiconductor layer so as to contact a side surface of an impurity region present in a center portion of the semiconductor pillar or a side surface of... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer and a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A metal gate line is connected to a metal gate electrode and extends in a direction perpendicular to a direction that of the fin-shaped semiconductor layer. A width of a bottom of... Unisantis Electronics Singapore Pte Ltd

Method for producing semiconductor device

A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a first insulating film around the fin-shaped semiconductor layer; and a second step following the first step and including forming a second insulating film around the fin-shaped... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a first pillar-shaped semiconductor layer, a first selection gate insulating film, a first selection gate, a first gate insulating film, a first contact electrode, a first bit line connected to an upper portion of the first pillar-shaped semiconductor layer and an upper portion of the first... Unisantis Electronics Singapore Pte Ltd

Semiconductor device with surrounding gate transistors in a nand circuit

A semiconductor device employs surrounding gate transistors (SGTs) which are vertical transistors to constitute a CMOS NAND circuit. The NAND circuit is formed by using a plurality of MOS transistors arranged in m rows and n columns. The MOS transistors constituting the NAND circuit are formed on a planar silicon... Unisantis Electronics Singapore Pte Ltd

Semiconductor device

A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and a second pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A metal contact electrode is around the second pillar-shaped semiconductor layer, and a metal contact line is connected to the metal contact electrode. A diffusion layer is... Unisantis Electronics Singapore Pte Ltd

02/16/17 / #20170047428

Method for producing semiconductor device

A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer; a second step of forming a first pillar-shaped semiconductor layer, a first dummy gate, a second pillar-shaped semiconductor layer, and a second dummy gate; a third step of... Unisantis Electronics Singapore Pte Ltd

02/09/17 / #20170040329

Method for producing an sgt-including semiconductor device

A method for producing an SGT-including semiconductor device includes forming a gate insulating layer on an outer periphery of a Si pillar, forming a gate conductor layer on the gate insulating layer, and forming an oxide layer on the gate conductor layer. Then a hydrogen fluoride ion diffusion layer containing... Unisantis Electronics Singapore Pte Ltd

02/02/17 / #20170033108

Method for manufacturing semiconductor device and semiconductor device

A semiconductor device includes a first and second fin-shaped semiconductor layers on a substrate. A first insulating film is around the first and second fin-shaped layers. A first and second pillar-shaped semiconductor layers reside on the first and second fin-shaped layers, respectively. A width of a bottom of the first... Unisantis Electronics Singapore Pte Ltd

01/26/17 / #20170025513

Semiconductor device

A semiconductor device includes a pillar-shaped semiconductor having an impurity concentration of 1017 cm−3 or less. A first insulator surrounds the pillar-shaped semiconductor and a first metal surrounds a portion of the first insulator at a first end of the pillar-shaped semiconductor. A second metal surrounds a portion of the... Unisantis Electronics Singapore Pte Ltd

01/05/17 / #20170005264

Semiconductor device and producing semiconductor device

The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a... Unisantis Electronics Singapore Pte Ltd








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Unisantis Electronics Singapore Pte Ltd in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Unisantis Electronics Singapore Pte Ltd with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###