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United Microelectronics Corporation
United Microelectronics Corporation_20131212

United Microelectronics Corporation patents


Recent patent applications related to United Microelectronics Corporation. United Microelectronics Corporation is listed as an Agent/Assignee. Note: United Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with United Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | United Microelectronics Corporation-related inventors


Device with reinforced metal gate spacer and fabricating

A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate... United Microelectronics Corporation

Field-effect transistor and making the same

A semiconductor device includes a semiconductor substrate, a gate structure formed over the semiconductor substrate, and an epitaxial structure formed partially within the semiconductor substrate. A vertically extending portion of the epitaxial structure extends vertically above a top surface of the semiconductor substrate in an area adjacent the gate structure.... United Microelectronics Corporation

Method for fabricating a fin field effect transistor (finfet)

The invention provides a method for fabricating a fin field effect transistor (FinFET), comprising: providing a substrate having a logic region and a large region; forming a plurality of fin structures in the logic region by removing a portion of the substrate in the logic region; forming an oxide layer... United Microelectronics Corporation

Method of epitaxial structure formation in a semiconductor

The invention provides a method of epitaxial structure formation in a semiconductor, comprising: providing a substrate; performing a dry etch to form a first recess; after performing the dry etch, performing a SPM cleaning process on the substrate by using a nozzle spraying SPM solution with an angle greater than... United Microelectronics Corporation

Method for manufacturing a high-voltage finfet device having ldmos structure

A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The method includes: providing a substrate with a fin structure to define a first and a second type well regions; forming a trench in the first-type well region to separate the fin structure into... United Microelectronics Corporation

Device with reinforced metal gate spacer and fabricating

A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate... United Microelectronics Corporation

Fin-shaped field effect transistor

The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the... United Microelectronics Corporation








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