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United Silicon Carbide Inc patents


Recent patent applications related to United Silicon Carbide Inc. United Silicon Carbide Inc is listed as an Agent/Assignee. Note: United Silicon Carbide Inc may have other listings under different names/spellings. We're not affiliated with United Silicon Carbide Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | United Silicon Carbide Inc-related inventors


Perimeter control of crack propagation in semiconductor wafers

A semiconductor substrate such as a wafer includes a scoring that is inset from the perimeter. The scoring follows the perimeter or a portion thereof. ... United Silicon Carbide Inc

Tunneling field effect transistor

A tunneling field-effect transistor with an insulated planar gate adjacent to a heterojunction between wide-bandgap semiconductor, such as silicon carbide, and either a narrow band gap material or a high work function metal. The heterojunction may be formed by filling a recess on a silicon carbide planar substrate, for example by etched into an epitaxially grown drift region atop the planar substrate. ... United Silicon Carbide Inc

Planar multi-implanted jfet

A jfet having vertical and horizontal channel elements may be made from a semiconductor material such as silicon carbide using a first mask for multiple implantations to form a horizontal planar jfet region comprising a lower gate, a horizontal channel, and an upper gate, all above a drift region resting on a drain substrate region, such that the gates and horizontal channel are self-aligned with the same outer size and outer shape in plan view. A second mask may be used to create a vertical channel region abutting the horizontal channel region. ... United Silicon Carbide Inc

Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same

Disclosed herein is a shielded-gate silicon carbide trench mos-controlled switch, such as a mosfet or igbt, with a reduced miller capacitance. The switch disclosed herein can be used in a variety of applications, including high temperature and/or high voltage power conversion.. ... United Silicon Carbide Inc

Trench vertical jfet with ladder termination

A vertical jfet with a ladder termination may be made by a method using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. ... United Silicon Carbide Inc

Wide bandgap junction barrier schottky diode with silicon bypass

A silicon surge bypass diode is co-packaged with a high bandgap junction barrier schottky diode. The co-packaged diodes may be used in a power circuits such as power factor correction circuits, converters, inverters circuit, motor drives, and protection circuits, for example. ... United Silicon Carbide Inc

Planar triple-implanted jfet

A jfet is formed with vertical and horizontal elements made from a high band-gap semiconductor material such as silicon carbide via triple implantation of a substrate comprising an upper drift region and a lower drain region, the triple implantation forming a lower gate, a horizontal channel, and an upper gate, in a portion of the drift region. A source region may be formed through a portion of the top gate, and the top and bottom gates are connected. ... United Silicon Carbide Inc

Planar triple-implanted jfet

A jfet is formed with vertical and horizontal elements made from a high band-gap semiconductor material such as silicon carbide via triple implantation of a substrate comprising an upper drift region and a lower drain region, the triple implantation forming a lower gate, a horizontal channel, and an upper gate, in a portion of the drift region. A source region may be formed through a portion of the top gate, and the top and bottom gates are connected. ... United Silicon Carbide Inc

Vertical jfet made using a reduced mask set

A vertical jfet made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. ... United Silicon Carbide Inc

Vertical jfet made using a reduced mask set

A vertical jfet made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions simultaneously. ... United Silicon Carbide Inc

Trenched and implanted bipolar junction transistor

The present invention concerns a monolithically merged trenched-and-implanted bipolar junction transistor (ti-bjt) with antiparallel diode and a method of manufacturing the same. Trenches are made in a collector, base, emitter stack downto the collector. ... United Silicon Carbide Inc








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