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Unity Semiconductor Corporation patents


Recent patent applications related to Unity Semiconductor Corporation. Unity Semiconductor Corporation is listed as an Agent/Assignee. Note: Unity Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Unity Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | Unity Semiconductor Corporation-related inventors


Two-terminal reversibly switchable memory device

A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric filed to cause oxygen ionic motion.. ... Unity Semiconductor Corporation

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (cmo), which, in turn, can include a first layer of cmo including mobile oxygen ions, and a second layer of cmo formed in contact with the first layer of cmo to cooperate with the first layer of cmo to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. ... Unity Semiconductor Corporation

Memory element with a reactive metal layer

A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (me) having tantalum. The me including a first terminal, a second terminal, a first layer of a conductive metal oxide (cmo), and a second layer in direct contact with the first layer. ... Unity Semiconductor Corporation

Access signal adjustment circuits and methods for memory cells in a cross-point array

Systems, integrated circuits, and methods to utilize access signals to facilitate memory operations in scaled arrays of memory elements are described. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements and line driver. ... Unity Semiconductor Corporation

Method and device for detecting an object hidden behind an article

The invention relates to a method and a measuring arrangement for detecting an object (3) hidden behind an article (1). The method comprises the following steps: applying a first alternating voltage (5) to a first sensor (7); applying a second alternating voltage (9) to a second sensor (11) arranged adjacent to the first sensor (7); determining an effect (15) of the article (1) on at least one of the alternating voltages (5, 9) depending on a distance (13) of the sensor (7, 11) to the article (1); determining a change (17) in the dependent effect (15) occurring during a movement (19) of the sensor (7, 11) along the article (1); and detecting the object (3) in accordance with the change (17) of the dependent effect (15). ... Unity Semiconductor Corporation

Vertical cross-point arrays for ultra-high-density memory applications

An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of horizontal lines in each horizontal line layer. ... Unity Semiconductor Corporation

High voltage switching circuitry for a cross-point array

A system includes a cross-point memory array and a decoder circuit coupled to the cross-point memory array. The decoder circuit includes a predecoder having predecode logic to generate a control signal and a level shifter circuit to generate a voltage signal. ... Unity Semiconductor Corporation

Array voltage regulating technique to enable data operations on large memory arrays with resistive memory elements

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to preserve states of memory elements in association with data operations using variable access signal magnitudes for other memory elements, such as implemented in third dimensional memory technology. In some embodiments, a memory device can include a cross-point array with resistive memory elements. ... Unity Semiconductor Corporation

Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations

A memory array includes wordlines, local bitlines, two-terminal memory elements, global bitlines, and local-to-global bitline pass gates and gain stages. The memory elements are formed between the wordlines and local bitlines. ... Unity Semiconductor Corporation

Unity Semiconductor

. . ... Unity Semiconductor Corporation

Memory element with a reactive metal layer

A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (me) having tantalum. The me including a first terminal, a second terminal, a first layer of a conductive metal oxide (cmo), and a second layer in direct contact with the first layer. ... Unity Semiconductor Corporation

Preservation circuit and methods to maintain values representing data in one or more layers of memory

Methods to maintain values representing data in a memory are disclosed. A method may include identifying a plurality of in-use portions of the memory currently used to store data and recording which in-use portion was a last portion of the memory to be rewritten. ... Unity Semiconductor Corporation

Access signal conditioning for memory cells in an array

A memory is described having an array including two-terminal resistive memory elements (mes) to retain stored data in an absence of electrical power and a disturb isolator circuit operatively coupled to the mes to compensate for disturbances of a magnitude of a signal associated with a selected two-terminal resistive memory element in the array.. . ... Unity Semiconductor Corporation

Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells

A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (cmo), which, in turn, can include a first layer of cmo including mobile oxygen ions, and a second layer of cmo formed in contact with the first layer of cmo to cooperate with the first layer of cmo to form an ion obstruction barrier. The ion obstruction barrier is configured to inhibit transport or diffusion of a subset of mobile ion to enhance, among other things, memory effects and cycling endurance of memory cells. ... Unity Semiconductor Corporation

02/02/17 / #20170033158

Vertical cross-point memory arrays

A method of manufacturing a memory structure includes forming a plurality of vertically-stacked horizontal line layers, interleaving a plurality of electrically conductive vertical lines with the electrically conductive horizontal lines, and forming a memory film at and between intersections of the electrically conductive vertical lines and the horizontal lines. In one embodiment of the invention, the electrically conductive vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each horizontally-adjacent pair of horizontal lines in each horizontal line layer. ... Unity Semiconductor Corporation

01/26/17 / #20170025173

High voltage switching circuitry for a cross-point array

A system includes a cross-point memory array and a decoder circuit coupled to the cross-point memory array. The decoder circuit includes a predecoder having predecode logic to generate a control signal and a level shifter circuit to generate a voltage signal. ... Unity Semiconductor Corporation

01/12/17 / #20170010831

Array voltage regulating technique to enable data operations on large memory arrays with resistive memory elements

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to preserve states of memory elements in association with data operations using variable access signal magnitudes for other memory elements, such as implemented in third dimensional memory technology. In some embodiments, a memory device can include a cross-point array with resistive memory elements. ... Unity Semiconductor Corporation








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