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Vanguard International Semiconductor Corporation patents


Recent patent applications related to Vanguard International Semiconductor Corporation. Vanguard International Semiconductor Corporation is listed as an Agent/Assignee. Note: Vanguard International Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Vanguard International Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "V" | Vanguard International Semiconductor Corporation-related inventors


 new patent  Driving circuit

A driving circuit controlling a voltage level of an input/output pad and having an electrostatic discharge (ESD) protection function comprises a detector, a controller, and a release control element. The detector is configured to couple to a power terminal and the input/output pad. The controller is coupled to the detector.... Vanguard International Semiconductor Corporation

Semiconductor devices, via structures and methods for forming the same

A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an... Vanguard International Semiconductor Corporation

Semiconductor device structures

Semiconductor device structures are provided. The semiconductor device structures include a semiconductor substrate. The semiconductor device structures also include an inner metal layer disposed on the semiconductor substrate and a top metal layer disposed on the inner metal layer, wherein the top metal layer has a first portion and a... Vanguard International Semiconductor Corporation

Protection device and operation system utilizing the same

A protection device including a substrate, a first doped region, a first well region, a second doped region, a third doped region, a fourth doped region, a second well region, a fifth doped region, and a sixth doped region is provided. The substrate, the first well region, and the third... Vanguard International Semiconductor Corporation

Methods for fabricating trench isolation structure

A method for fabricating a trench isolation structure is provided. The method includes providing a substrate and forming a patterned mask layer on the substrate. A first etching step is performed on the substrate by using the patterned mask layer to form a trench in the substrate. A dielectric material... Vanguard International Semiconductor Corporation

Throttle valve

A throttle valve is provided. The throttle valve includes a throttle valve body, a valve plug, a hollow seal and a first scraper. A flow path is formed in the throttle valve body. The valve plug is disposed in the throttle valve body. A notch is formed on the valve... Vanguard International Semiconductor Corporation

Throttle valve

A throttle valve is provided, including a throttle valve body, a valve plug, a hollow seal, a cover, a spring, and a bushing. A flow path is formed in the throttle valve body. The valve plug is disposed in the throttle valve body. The degree of opening of the flow... Vanguard International Semiconductor Corporation

High-voltage semiconductor devices

A high-voltage semiconductor device includes a MOS device and a resistor device. The MOS device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. The resistor device is formed on the drain insulation region and is electrically connected to... Vanguard International Semiconductor Corporation

Integrated circuit and electrostatic discharge protection circuit thereof

An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (MOS) transistor, a second MOS transistor, and a third MOS transistor. The first MOS transistor is coupled between a power terminal and a ground terminal. The first MOS transistor has a control electrode terminal... Vanguard International Semiconductor Corporation

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer; a first conductive type first well region disposed in the substrate and the epitaxial layer; a second conductive type first buried layer and a second conductive type second buried layer disposed at opposite sides of the... Vanguard International Semiconductor Corporation

High-voltage semiconductor device and manufacturing the same

A high-voltage semiconductor device is provided. The device includes a semiconductor substrate having a first conductivity type, and a first doping region having a second conductivity type therein. An epitaxial layer is on the semiconductor substrate. A body region having the first conductivity type is in the epitaxial layer on... Vanguard International Semiconductor Corporation

High-voltage semiconductor structure

A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed... Vanguard International Semiconductor Corporation

Method and mos device with doped region

A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. The device may also include a drain region, a source region, and a body region, where the source and body regions may operate... Vanguard International Semiconductor Corporation

Low dropout regulators

A low dropout regulator is provided. The low dropout regulator includes an output-stage circuit, a reference-voltage generation circuit, a timing controller, and an active low dropout circuit. When the low dropout regulator is at an operation mode, the output-stage circuit is controlled by a first enable signal to generate first... Vanguard International Semiconductor Corporation

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate including a first conductive type well region; a gate structure; a lightly-doped drain region and a lightly-doped source region disposed at two opposite sides of the gate structure; a second conductive type first doped region disposed in the lightly-doped... Vanguard International Semiconductor Corporation

Esd protection circuits

An ESD protection circuit, which is coupled between either an I/O pad or a power pad and a ground terminal, includes a non-snapback device and a snapback device. When the voltage across the non-snapback device is not less than the non-snapback trigger voltage, the non-snapback device is turned on. When... Vanguard International Semiconductor Corporation

A metal-oxide field effect transistor having an oxide region within a lightly doped drain region

A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. A source region and a drain region are disposed on opposite sides of the gate structure on the semiconductor substrate. A lightly-doped... Vanguard International Semiconductor Corporation

Method and power device with multiple doped regions

A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second... Vanguard International Semiconductor Corporation

Semiconductor structure and manufacturing the same

A semiconductor structure includes a first high-voltage MOS device region having a first light doping region in a substrate. The conductive type of the substrate is similar to that of the first light doping region. A first well is in the substrate. The first well substantially contacts a side of... Vanguard International Semiconductor Corporation

Semiconductor device and manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate; a well region disposed in the substrate; an isolation structure surrounding an active region in the well region; a source region disposed in the well region; a drain region disposed in the well region; a second conductive type first... Vanguard International Semiconductor Corporation

Semiconductor device layout structure

The invention provides a semiconductor device layout structure disposed in an active region. The semiconductor device layout structure includes a first well region having a first conduction type. A second well region having a second conduction type opposite the first conduction type is disposed adjacent to and enclosing the first... Vanguard International Semiconductor Corporation

High-side circuits with modified diode and layout placement thereof

A high-side circuit, adapted for a switched-mode converter, includes a level shifter, a high-side driver, a high-side transistor, a capacitor, and an active diode. The level shifter receives a first signal to generate a set signal. The high-side driver is supplied by a bootstrap voltage of a bootstrap node and... Vanguard International Semiconductor Corporation

Boost devices with active diodes and switch-mode converters thereof

A switch-mode converter includes a high-side driver, a high-side transistor, a low-side driver, a low-side transistor, a capacitor, and an active diode. The high-side driver is supplied by the bootstrap voltage of the bootstrap node and a floating reference voltage of a floating reference node, and generates the high-side output... Vanguard International Semiconductor Corporation

Semiconductor device

The invention provides a semiconductor device. The semiconductor device includes a buried oxide layer disposed on a substrate. A semiconductor layer having a first conduction type is disposed on the buried oxide layer. A first well doped region having a second conduction type is disposed in the semiconductor layer. A... Vanguard International Semiconductor Corporation








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