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Varian Semiconductor Equipment Associates Inc
Varian Semiconductor Equipment Associates Inc_20100128

Varian Semiconductor Equipment Associates Inc patents


Recent patent applications related to Varian Semiconductor Equipment Associates Inc. Varian Semiconductor Equipment Associates Inc is listed as an Agent/Assignee. Note: Varian Semiconductor Equipment Associates Inc may have other listings under different names/spellings. We're not affiliated with Varian Semiconductor Equipment Associates Inc, we're just tracking patents.

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 new patent  Rf ion source with dynamic volume control

Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (rf) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an rf antenna adjacent a plasma within the plasma chamber, wherein the rf antenna is configured to provide rf energy to the plasma. ... Varian Semiconductor Equipment Associates Inc

Thermally insulating electrical contact probe

A thermally insulating electrical contact probe including a mounting plate having a tubular pin guide defining a pin pass-through, a cover coupled to the mounting plate and having a neck portion enclosing the pin guide, and an insulating pin having a shank portion disposed within the pin pass-through and defining a conductor pass-through, a flange portion extending radially outwardly from the shank portion above a top of the pin guide, and a pocket portion extending from the flange portion and defining a pocket. The electrical contact probe may further include a spring disposed intermediate the flange portion and the mounting plate, the spring biasing the flange portion away from the mounting plate, an electrical contact pad disposed within the pocket, and an electrical conductor coupled to the electrical contact pad and extending through the conductor pass-through.. ... Varian Semiconductor Equipment Associates Inc

Plasma doping using a solid dopant source

A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. ... Varian Semiconductor Equipment Associates Inc

Fault current limiter with modular mutual reactor

Embodiments of the disclosure include a fault current limiter having a first current splitting device including a primary winding and secondary winding wound around a first core, and a second current splitting device including a primary winding and a secondary winding wound around a second core. The fault current limiter may further include a fault current limiter module (e.g., a switching module) electrically connected in series between the secondary winding of the first current splitting device and the secondary winding of the second current splitting device. ... Varian Semiconductor Equipment Associates Inc

Removable substrate plane structure ring

An apparatus may include a platen to hold a substrate. A substrate plane structure may be disposed in front of the platen. ... Varian Semiconductor Equipment Associates Inc

Techniques for processing a polycrystalline layer using an angled ion beam

A method of processing a layer. The method may include providing the layer on a substrate, the substrate defining a substrate plane; directing an ion beam to an exposed surface of the layer in an ion exposure when the substrate is disposed in a first rotational position, the ion beam having a first ion trajectory, the first ion trajectory extending along a first direction, wherein the first ion trajectory forms a non-zero angle of incidence with respect to a perpendicular to the substrate plane; performing a rotation by rotating the substrate with respect to the ion beam about the perpendicular from the first rotational position to a second rotational position; and directing the ion beam to the exposed surface of the layer in an additional ion exposure along the first ion trajectory when the substrate is disposed in the second rotational position.. ... Varian Semiconductor Equipment Associates Inc

Boron implanting using a co-gas

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon or neon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. ... Varian Semiconductor Equipment Associates Inc

Ion implantation for superconductor tape fabrication

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.. . ... Varian Semiconductor Equipment Associates Inc

Temperature controlled ion source

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. ... Varian Semiconductor Equipment Associates Inc

Method of improving ion beam quality in a non-mass-analyzed ion implantation system

A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a group 4 or group 5 element. ... Varian Semiconductor Equipment Associates Inc

Techniques for forming patterned features using directional ions

A method of patterning a substrate. The method may include: providing a first surface feature and a second surface feature in a staggered configuration within a layer, the layer being disposed on the substrate, and directing first ions in a first exposure to a first side of the first surface feature and a first side of the second surface feature, in a presence of a reactive ambient containing a reactive species, wherein the first exposure etches the first side of the first surface feature and the first side of the second surface feature, wherein after the directing, the first surface feature and the second surface feature merge to form a third surface feature.. ... Varian Semiconductor Equipment Associates Inc

Extreme edge uniformity control

A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. ... Varian Semiconductor Equipment Associates Inc

Apparatus and method for crystalline sheet growth

An apparatus for forming a crystalline sheet. The apparatus may include a crystallizer comprising a first gas channel and a second gas channel, wherein the first gas channel and second gas channel extend through the crystallizer to a lower surface of the crystallizer between an upstream edge and a downstream edge. ... Varian Semiconductor Equipment Associates Inc

Angle control for radicals and reactive neutral ion beams

A workpiece processing apparatus allowing independent control of the extraction angles of charged ions and reactive neutrals is disclosed. The apparatus includes an extraction plate having an extraction aperture through which charged ions pass. ... Varian Semiconductor Equipment Associates Inc

03/08/18 / #20180068830

Boron implanting using a co-gas

An apparatus and methods of improving the ion beam quality of a halogen-based source gas are disclosed. Unexpectedly, the introduction of a noble gas, such as argon, to an ion source chamber may increase the percentage of desirable ion species, while decreasing the amount of contaminants and halogen-containing ions. ... Varian Semiconductor Equipment Associates Inc

02/15/18 / #20180047864

System and method for crystalline sheet growth using a cold block and gas jet

A crystallizer for growing a crystalline sheet from a melt may include a cold block having a cold block surface that faces an exposed surface of the melt, the cold block configured to generate a cold block temperature at the cold block surface that is lower than a melt temperature of the melt at the exposed surface. The system may also include a nozzle disposed within the cold block and configured to deliver a gas jet to the exposed surface, wherein the gas jet and the cold block are interoperative to generate a process zone that removes heat from the exposed surface at a first heat removal rate that is greater than a second heat removal rate from the exposed surface in outer regions outside of the process zone.. ... Varian Semiconductor Equipment Associates Inc

02/15/18 / #20180047583

Composite patterning mask using angled ion beam deposition

A method may include providing an initial mask feature in a mask disposed on a substrate, the initial mask feature comprising a first material, the substrate defining a substrate plane; directing ions as an ion beam to the initial mask feature at a non-zero angle of incidence θ with respect to a perpendicular to the substrate plane, wherein a composite mask feature is formed, the composite mask feature comprising a cap material disposed on the initial mask feature, the cap material comprising the ions; and performing a substrate etch, wherein an etch feature is formed in the substrate, wherein at least a portion of the initial mask feature remains after the substrate etch, wherein the substrate etch etches the first material at a first etch rate and etches the cap material at a second etch rate, the first etch rate being greater than the second etch rate.. . ... Varian Semiconductor Equipment Associates Inc

01/04/18 / #20180005793

Vaporizer for ion source

A vaporizer with several novel features to prevent vapor condensation and the clogging of the nozzle is disclosed. The vaporizer is designed such that there is an increase in temperature along the path that the vapor travels as it flows from the crucible to the arc chamber. ... Varian Semiconductor Equipment Associates Inc

01/04/18 / #20180003567

Semiconductor workpiece temperature measurement system

An improved system and method of measuring the temperature of a workpiece being processed is disclosed. The temperature measurement system determines a temperature of a workpiece by measuring the amount of expansion in the workpiece due to thermal expansion. ... Varian Semiconductor Equipment Associates Inc

12/14/17 / #20170356807

System and method to monitor semiconductor workpiece temperature using thermal imaging

An improved system for measuring the temperature of a plurality of workpieces in a rotating semiconductor processing device is disclosed. Because silicon has variable emissivity in the infrared band, a temperature stable, high emissivity coating is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. ... Varian Semiconductor Equipment Associates Inc

11/23/17 / #20170335460

Diffusion resistant electrostatic clamp

In one embodiment, a method of fabricating an electrostatic clamp includes forming an insulator body, forming an electrode on the insulator body, and depositing a layer stack on the electrode, the layer stack comprising an aluminum oxide layer that is deposited using atomic layer deposition (ald).. . ... Varian Semiconductor Equipment Associates Inc

11/16/17 / #20170331282

Fault current limiter having fault checking system for power electronics and bypass circuit

A fault current limiter may include a current limiting leg to transmit a first current and a control leg in parallel with the current limiting leg, the control leg to transmit a second current. The control leg may include a plurality of power electronic modules arranged in electrical series with one another, and a bypass power electronic module arranged in electrical series with the plurality of power electronic modules. ... Varian Semiconductor Equipment Associates Inc

11/16/17 / #20170330796

Filling a cavity in a substrate using sputtering and deposition

A method may include providing a cavity in a surface of a substrate, the cavity comprising a sidewall portion and a lower surface; directing depositing species to the surface of the substrate, wherein the depositing species condense to form a fill material on the sidewall portion and lower surface; and directing angled ions at the cavity at a non-zero angle of incidence with respect to a perpendicular to a plane defined by the substrate, wherein the angled ions strike an exposed part of the sidewall portion and do not strike the lower surface, and wherein the cavity is filled by the fill material in a bottom-up fill process.. . ... Varian Semiconductor Equipment Associates Inc

10/26/17 / #20170311430

Apparatus and techniques to treat substrates using directional plasma and reactive gas

An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.. ... Varian Semiconductor Equipment Associates Inc

10/26/17 / #20170309454

Negative ribbon ion beams from pulsed plasmas

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an rf ion source, having an extraction aperture. ... Varian Semiconductor Equipment Associates Inc

10/26/17 / #20170309453

Radio frequency extraction system for charge neutralized ion beam

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an rf generator electrically coupled to the extraction plate, the rf generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.. . ... Varian Semiconductor Equipment Associates Inc

10/26/17 / #20170309434

Ceramic ion source chamber

The ihc ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The ion source chamber is constructed of a ceramic material having very low electrical conductivity. ... Varian Semiconductor Equipment Associates Inc

10/12/17 / #20170294569

Magnetic memory device and techniques for forming

A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.. . ... Varian Semiconductor Equipment Associates Inc

10/12/17 / #20170294330

Active substrate alignment system and method

An active substrate alignment system for an ion implanter, the system including a platen, a registration device adapted to selectively move a substrate engagement surface disposed adjacent the platen for limiting movement of a substrate disposed on the platen, a camera configured to capture an image of the substrate before the substrate is disposed on the platen, and a controller in communication with the camera and the registration device, the controller configured to command the registration device to move the substrate engagement surface based on the image to limit movement of the substrate in a predetermined manner.. . ... Varian Semiconductor Equipment Associates Inc

09/14/17 / #20170263460

Techniques for manipulating patterned features using ions

A method may include providing a surface feature on a substrate, the surface feature comprising a feature shape a feature location, and a dimension along a first direction within a substrate plane; depositing a layer comprising a layer material on the surface feature; and directing ions in an ion exposure at an angle of incidence toward the substrate, the angle of incidence forming a non-zero angle with respect to a perpendicular to the substrate plane, wherein the ion exposure comprises the ions and reactive neutral species, the ion exposure reactively etching the layer material, wherein the ions impact a first portion of the surface feature and do not impact a second portion of the surface feature, and wherein an altered surface feature is generated, the altered surface feature differing from the surface feature in at least one of: the dimension along the first direction, the feature shape, or the feature location.. . ... Varian Semiconductor Equipment Associates Inc

08/31/17 / #20170247810

System for measuring material thicknesses at high temperatures

A sheet-forming apparatus including a crucible for holding a melt of material and a solid sheet of the material disposed within the melt, a crystallizer disposed above the crucible and configured to form the sheet from the melt, and an ultrasonic measurement system disposed adjacent the crystallizer, the ultrasonic measurement system comprising at least one ultrasonic measurement device including a waveguide coupled to an ultrasonic transducer for directing an ultrasonic pulse through the melt.. . ... Varian Semiconductor Equipment Associates Inc

08/31/17 / #20170247791

Method of improving ion beam quality in a non-mass-analyzed ion implantation system

A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a group 4 or group 5 element. ... Varian Semiconductor Equipment Associates Inc

08/24/17 / #20170244241

Fault current limiter having self-checking power electronics and triggering circuit

A fault current limiter may include a current limiting leg to transmit a first current and a control leg in parallel with the current limiting leg, the control leg to transmit a second current. The control leg may include a plurality of solid state switches arranged in electrical series with one another; a plurality of current monitors arranged in electrical series with the plurality of solid state switches; and at least one triggering circuit, wherein the plurality of current monitors are electrically coupled to the at least one triggering circuit, and wherein the at least one triggering circuit is optically coupled to the plurality of solid state switches.. ... Varian Semiconductor Equipment Associates Inc

08/03/17 / #20170221678

Apparatus and method for in-situ cleaning in ion beam apparatus

An apparatus may include an electrostatic filter having a plurality of electrodes; a voltage supply assembly coupled to the plurality of electrodes; a cleaning ion source disposed between the electrostatic filter and a substrate position, the cleaning ion source generating a plasma during a cleaning mode, wherein a dose of ions exit the cleaning ion source; and a controller having a first component to generate a control signal for controlling the voltage supply assembly, wherein a negative voltage is applied to at least one of the plurality of electrodes when the plasma is generated.. . ... Varian Semiconductor Equipment Associates Inc

08/03/17 / #20170221669

Ceramic ion source chamber

The ihc ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The ion source chamber is constructed of a ceramic material having very low electrical conductivity. ... Varian Semiconductor Equipment Associates Inc

08/03/17 / #20170220007

Proportional integral derivative control incorporating multiple actuators

Embodiments of the disclosure provide proportional integral derivative control (pid) using multiple actuators. In one embodiment, a process includes providing a pid controller in communication with a primary actuator and a secondary actuator, the primary actuator and the secondary actuator coupled to a handler. ... Varian Semiconductor Equipment Associates Inc

08/03/17 / #20170220006

Proportional integral derivative control incorporating multiple actuators

Embodiments of the disclosure provide proportional integral derivative control (pid) using multiple actuators. In one embodiment, a process includes providing a pid controller in communication with a primary actuator and a secondary actuator, the primary actuator and the secondary actuator coupled to a handler, such as a robotic arm for manipulating an object. ... Varian Semiconductor Equipment Associates Inc

08/03/17 / #20170219926

Ion-assisted deposition and implantation of photoresist to improve line edge roughness

Provided herein are approaches for patterning a semiconductor device. Exemplary approaches include providing a set of photoresist patterning features atop a substrate, the set of patterning features having a surface roughness characterized by a set of protrusions and a set of indentations. ... Varian Semiconductor Equipment Associates Inc

07/27/17 / #20170213684

Dual material repeller

The ihc ion source comprises an ion source chamber having a cathode and a repeller on opposite ends. The repeller is made of two discrete parts, each comprising a different material. ... Varian Semiconductor Equipment Associates Inc

07/20/17 / #20170207361

Self-aligned mask for ion implantation

An improved method of doping a workpiece is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (ibc) solar cells. ... Varian Semiconductor Equipment Associates Inc

07/20/17 / #20170207063

Method for implantation of semiconductor wafers having high bulk resistivity

An ion implanter may include an electrostatic clamp to hold a substrate; a plasma flood gun generating a flux of electrons impinging upon the substrate; and a controller coupled to the plasma flood gun and including a component generating a control signal responsive to a measurement signal, the control signal to adjust operation of the plasma flood gun to a target operating level. At the target operating level the flux of electrons may comprise a stabilizing dose of electrons, the stabilizing concentration of electrons, the stabilizing concentration reducing a clamp current variation in the electrostatic clamp to a target value, the target value being less than a second value of clamp current variation when the plasma flood gun is not operating.. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170179133

Non-uniform gate oxide thickness for dram device

Provided herein are approaches for forming a gate oxide layer for a dram device, the method including providing a finned substrate having a recess formed therein, and performing an ion implant into a sidewall surface of the recess to form a gate oxide layer having a non-uniform thickness, wherein a thickness of the gate oxide layer at a top section of the sidewall surface is greater than a thickness of the gate oxide layer at a bottom section of the sidewall surface. In some approaches, the ion implant is provided as a series of ion implants at multiple different implant angles, varied along with an ion implantation energy and/or an ion dose to increase the thickness of the gate oxide of the top section of the sidewall surface. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178914

Etch rate modulation through ion implantation

As etching processes become more aggressive, increased etch resistivity of the hard mask is desirable. Methods of modulating the etch rate of the mask and optionally the underlying material are disclosed. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178911

Ion implantation for improved contact hole critical dimension uniformity

Provided herein are approaches for patterning a semiconductor device. In an exemplary approach, a method includes providing a set of contact openings through a photoresist formed atop a substrate, and implanting ions into just a sidewall surface of the set of contact openings. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178908

Damage free enhancement of dopant diffusion into a substrate

A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300 ° c. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178900

Techniques for controlling ion/neutral ratio of a plasma source

Approaches herein increase a ratio of reactive ions to a neutral species in a plasma processing apparatus. Exemplary approaches include providing a processing apparatus having a plasma source chamber including a first gas inlet, and a deposition chamber coupled to the plasma source chamber, wherein the deposition chamber includes a second gas inlet for delivering a point of use (pou) gas to an area proximate a substrate disposed within the deposition chamber. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178866

Apparatus and techniques for time modulated extraction of an ion beam

A plasma processing apparatus may include: a plasma chamber; a power source to generate a plasma in the plasma chamber; an extraction voltage supply coupled to the plasma chamber to apply a pulsed extraction voltage between the plasma chamber and a substrate; an extraction assembly disposed along a side of the plasma chamber between the plasma chamber and the substrate, the extraction assembly having at least one aperture, the at least one aperture defining a first ion beam when the plasma is present in the plasma chamber and the pulsed extraction voltage is applied; a deflection electrode adjacent the extraction assembly; and a controller to synchronize application of the pulsed extraction voltage with application of a pulsed deflection voltage to the deflection electrode.. . ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170178857

Temperature controlled ion source

An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. ... Varian Semiconductor Equipment Associates Inc

06/22/17 / #20170173799

Self-damping end effector

A self-damping end effector including a base, a finger extending from the base and adapted to support a substrate, and a damper associated with the finger, the damper having a natural frequency within a predetermined tolerance of a natural frequency of the finger.. . ... Varian Semiconductor Equipment Associates Inc

06/15/17 / #20170169987

Parallelizing electrostatic acceleration/deceleration optical element

Provided herein are approaches for controlling a charged particle beam using a series of electrodes including a plurality of different shapes. In one approach, an electrostatic optical element includes a first set of electrodes having a first electrode shape for parallelizing and deflecting the charged particle beam using a first set of electrodes having a first electrode shape, such as a concave or convex profile. ... Varian Semiconductor Equipment Associates Inc

06/08/17 / #20170162384

Apparatus and techniques for filling a cavity using angled ion beam

A method may include generating a plasma in a plasma chamber and directing the ions comprising at least one of a condensing species and inert gas species from the plasma to a cavity within a substrate at a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate. The method may further include; depositing a fill material within the cavity using the condensing species, the depositing taking place concurrently with the directing the ions, wherein the fill material accumulates on a lower surface of the cavity at a first rate, and wherein the fill material accumulates on an upper portion of a sidewall of the cavity at a second rate less than the first rate.. ... Varian Semiconductor Equipment Associates Inc

06/08/17 / #20170159188

System and method for controllable non-volatile metal removal

A system and method for removing metal from a substrate in a controlled manner is disclosed. The system includes a chamber, with one or more gas inlets to allow the flow of gasses into the chamber, at least one exhaust pump, to exhaust gasses from the chamber, and a heater, capable of modifying the temperature of the chamber. ... Varian Semiconductor Equipment Associates Inc

06/08/17 / #20170157909

Planar end effector and method of making a planar end effector

A planar end effector and method of making a planar end effector. The method may include the steps of applying adhesive to a first side of a first sheet, the first sheet having a second side opposite the first side, and disposing a first side of a second sheet on the adhesive, the second sheet having a second side opposite the first side, wherein the first sides of the first and second sheets confront each other and define an at least partially adhesive-filled bond-gap therebetween and wherein the second sides of the first and second sheets are parallel with one another. ... Varian Semiconductor Equipment Associates Inc

05/18/17 / #20170140956

Single piece ceramic platen

A single piece ceramic platen is disclosed. This platen may be manufactured using additive manufacturing. ... Varian Semiconductor Equipment Associates Inc

05/18/17 / #20170140895

Low profile extraction electrode assembly

A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.. . ... Varian Semiconductor Equipment Associates Inc

05/11/17 / #20170133575

Laser processing of superconductor layers

A method of forming a superconductor includes exposing a layer disposed on a substrate to an oxygen ambient, and selectively annealing a portion of the layer to form a superconducting region within the layer.. . ... Varian Semiconductor Equipment Associates Inc

05/11/17 / #20170133491

Finfet spacer etch with no fin recess and no gate-spacer pull-down

A method may include providing a patterned feature extending from a substrate plane of a substrate, the patterned feature including a semiconductor portion and a coating in an unhardened state extending along a top region and along sidewall regions of the semiconductor portion; implanting first ions into the coating, the first ions having a first trajectory along a perpendicular to the substrate plane, wherein the first ions form a etch-hardened portion comprising a hardened state disposed along the top region; and directing a reactive etch using second ions at the coating, the second ions having a second trajectory forming a non-zero angle with respect to the perpendicular, wherein the reactive etch removes the etch-hardened portion at a first etch rate, wherein the first etch rate is less than a second etch rate when the second ions are directed in the reactive etch to the top portion in the unhardened state.. . ... Varian Semiconductor Equipment Associates Inc

05/11/17 / #20170131154

System and method for in situ temperature measurement

A system and method for monitoring the temperature of a platen and a workpiece disposed on that platen is disclosed. Since the platen is a dielectric material, its properties, such as resistivity and conductivity, may change as a function of temperature. ... Varian Semiconductor Equipment Associates Inc

05/04/17 / #20170125526

Encapsulated nanostructures and method for fabricating

Various nanostructures, including silicon nanowires and encapsulated silicon nanoislands, and methods of making the nanostructures are provided. The methods can include providing a fin structure extending above a substrate, wherein the fin structure has at least one silicon layer and at least two silicon:germanium alloy (sige) layers that define sidewalls of the fin structure; and annealing the fin structure in oxygen to form a silicon nanowire assembly. ... Varian Semiconductor Equipment Associates Inc

04/27/17 / #20170117113

Ion source for multiple charged species

An indirectly heated cathode (ihc) ion source having improved life is disclosed. The ihc ion source comprises a chamber having a cathode and a repeller on opposite ends of the ion source. ... Varian Semiconductor Equipment Associates Inc

04/20/17 / #20170110286

Controlling an ion beam in a wide beam current operation range

Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. ... Varian Semiconductor Equipment Associates Inc

03/30/17 / #20170092473

In-situ plasma cleaning of process chamber electrostatic elements having varied geometries

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. ... Varian Semiconductor Equipment Associates Inc

03/16/17 / #20170076908

Techniques and apparatus for manipulating an ion beam

A method may include: generating an ion beam from an ion source, the ion beam having an initial direction of propagation; deflecting the ion beam at an initial angle of inclination with respect to the initial direction of propagation; passing the ion beam through an aperture in a magnetic assembly; and generating in the aperture, a quadrupole field extending along a first direction perpendicular to the initial direction of propagation of the ion beam, and a dipole field extending along a second direction perpendicular to the first direction and the initial direction of propagation.. . ... Varian Semiconductor Equipment Associates Inc

03/02/17 / #20170062221

Liquid immersion doping

Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. ... Varian Semiconductor Equipment Associates Inc

03/02/17 / #20170062185

Gas injection system for ion beam device

A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.. . ... Varian Semiconductor Equipment Associates Inc

03/02/17 / #20170062182

Method of improving ion beam quality in an implant system

A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. ... Varian Semiconductor Equipment Associates Inc

03/02/17 / #20170062173

Light bath for particle suppression

An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. ... Varian Semiconductor Equipment Associates Inc

02/23/17 / #20170053776

Apparatus and method for generating high current negative hydrogen ion beam

An apparatus to generate negative hydrogen ions. The apparatus may include an ion source chamber having a gas inlet to receive h2 gas; a light source directing radiation into the ion source chamber to generate excited h2 molecules having an excited vibrational state from at least some of the h2 gas; a low energy electron source directing low energy electrons into the ion source chamber, wherein h− ions are generated from at least some of the excited h2 molecules; and an extraction assembly arranged to extract the h− ions from the ion source chamber.. ... Varian Semiconductor Equipment Associates Inc

02/23/17 / #20170051430

Apparatus for forming crystalline sheet from a melt

An apparatus for drawing a crystalline sheet from a melt. The apparatus may include a crucible configured to contain the melt and having a dam structure, where the melt comprises an exposed surface having a level defined by a top of the dam structure. ... Varian Semiconductor Equipment Associates Inc

02/09/17 / #20170042010

Apparatus and techniques to treat substrates using directional plasma and reactive gas

An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.. ... Varian Semiconductor Equipment Associates Inc

02/09/17 / #20170037535

Thermal load leveling using anisotropic materials

An apparatus for growing a silicon crystal substrate comprising a heat source, an anisotropic thermal load leveling component, a crucible, and a cold plate component is disclosed. The anisotropic thermal load leveling component possesses a high thermal conductivity and may be positioned atop the heat source to be operative to even-out temperature and heat flux variations emanating from the heat source. ... Varian Semiconductor Equipment Associates Inc

02/02/17 / #20170032937

Negative ribbon ion beams from pulsed plasmas

An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an rf ion source, having an extraction aperture. ... Varian Semiconductor Equipment Associates Inc

02/02/17 / #20170032927

High brightness ion beam extraction

An apparatus for the creation of high current ion beams is disclosed. The apparatus includes an ion source, such as a rf ion source or an indirectly heated cathode (ihc) ion source, having an extraction aperture. ... Varian Semiconductor Equipment Associates Inc

02/02/17 / #20170032924

Controlling contamination particle trajectory from a beam-line electrostatic element

Provided herein are approaches for controlling particle trajectory from a beam-line electrostatic element. In an exemplary approach, a beam-line electrostatic element is disposed along a beam-line of an electrostatic filter (ef), and a voltage is supplied to the beam-line electrostatic element to generate an electrostatic field surrounding the beam-line electrostatic element, agitating a layer of contamination particles formed on the beam-line electrostatic element. ... Varian Semiconductor Equipment Associates Inc

02/02/17 / #20170029950

Apparatus and method for carbon film deposition profile control

In one embodiment, an apparatus to selectively deposit a carbon layer on substrate, comprising a plasma chamber to receive a flow of carbon-containing gas; a power source to generate a plasma containing the carbon-containing gas in the plasma chamber; an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the extraction plate further configured to conduct a neutral species derived from the carbon-containing gas to the substrate; and a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate.. . ... Varian Semiconductor Equipment Associates Inc

01/26/17 / #20170025277

Masking for high temperature implants

A method for the selective implantation of a workpiece is disclosed. In place of conventional photoresist, a two layer structure is used. ... Varian Semiconductor Equipment Associates Inc

01/26/17 / #20170025253

Selective processing of a workpiece

Systems and methods for the selective processing of a particular portion of a workpiece are disclosed. For example, the outer portion may be processed by directing an ion beam toward a first position on the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two first locations. ... Varian Semiconductor Equipment Associates Inc

01/26/17 / #20170025252

Apparatus and techniques to treat substrates using directional plasma and point of use chemistry

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.. ... Varian Semiconductor Equipment Associates Inc

01/05/17 / #20170005013

Workpiece processing technique

Methods for processing of a workpiece are disclosed. The actual rate at which different portions of an ion beam can process a workpiece, referred to as the processing rate profile, is determined by measuring the amount of material removed from, or added to, a workpiece by the ion beam as a function of ion beam position. ... Varian Semiconductor Equipment Associates Inc








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