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Vishay General Semiconductor Llc patents

Recent patent applications related to Vishay General Semiconductor Llc. Vishay General Semiconductor Llc is listed as an Agent/Assignee. Note: Vishay General Semiconductor Llc may have other listings under different names/spellings. We're not affiliated with Vishay General Semiconductor Llc, we're just tracking patents.

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Date Vishay General Semiconductor Llc patents (updated weekly) - BOOKMARK this page
04/20/17 new patent  Local semiconductor wafer thinning
12/15/16Lead frame with conductive clip for mounting a semiconductor die with reduced clip shifting
10/06/16Thin bi-directional transient voltage suppressor (tvs) or zener diode
11/26/15Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
11/26/15Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
07/16/15Trench mos device having a termination structure with multiple field-relaxation trenches for high voltage applications
06/25/15Process for forming a planar diode using one mask
04/02/15Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current
01/15/15Gallium nitride power semiconductor device having a vertical structure
08/07/14Double trench rectifier
07/17/14Electrical press-fit pin for a semiconductor module
05/22/14Gan-based schottky diode having partially recessed anode
05/22/14Gan-based schottky diode having dual metal, partially recessed electrode
05/22/14Trench-based device with improved trench protection
05/15/14Axial semiconductor package
11/28/13Process for forming a planar diode using one mask
08/29/13Semiconductor device and manufacturing a semiconductor device
07/04/13Trench dmos device with improved termination structure for high voltage applications
10/04/12Potted integrated circuit device with aluminum case
09/06/12Double trench rectifier
08/09/12Trench mos barrier schottky (tmbs) having multiple floating gates
08/09/12Low forward voltage drop transient voltage suppressor and fabricating
07/05/12Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers
04/26/12Schottky rectifier
09/22/11Trench dmos device with improved termination structure for high voltage applications
09/22/11Trench dmos device with improved termination structure for high voltage applications
07/14/11Subassembly that includes a power semiconductor die and a heat sink having an exposed surface portion thereof
04/14/11Trench termination structure
03/24/11Double trench rectifier
03/03/11Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layers
08/26/10Electronic device and lead frame
04/16/09Semiconductor device and manufacturing a semiconductor device







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