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Vishay General Semiconductor Llc patents (2015 archive)


Recent patent applications related to Vishay General Semiconductor Llc. Vishay General Semiconductor Llc is listed as an Agent/Assignee. Note: Vishay General Semiconductor Llc may have other listings under different names/spellings. We're not affiliated with Vishay General Semiconductor Llc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "V" | Vishay General Semiconductor Llc-related inventors


11/26/15 / #20150340458

Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

A semiconductor device such as a zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. ... Vishay General Semiconductor Llc

11/26/15 / #20150340431

Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

A semiconductor device such as a zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. ... Vishay General Semiconductor Llc

07/16/15 / #20150200250

Trench mos device having a termination structure with multiple field-relaxation trenches for high voltage applications

A termination structure for a semiconductor device includes a semiconductor substrate having an active region and a termination region. Two or more trench cells are located in the termination region and extend from a boundary of the active region toward an edge of the semiconductor substrate. ... Vishay General Semiconductor Llc

06/25/15 / #20150179824

Process for forming a planar diode using one mask

A planar diode and method of making the same employing only one mask. The diode is formed by coating a substrate with an oxide, removing a central portion of the oxide to define a window through which dopants are diffused. ... Vishay General Semiconductor Llc

04/02/15 / #20150091136

Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

A semiconductor device such as a zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. ... Vishay General Semiconductor Llc

01/15/15 / #20150014696

Gallium nitride power semiconductor device having a vertical structure

A semiconductor device includes a substrate having first and second sides and a first active layer disposed over the first side of the substrate. A second active layer is disposed on the first active layer. ... Vishay General Semiconductor Llc








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