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Vishay siliconix
Vishay siliconix_20100128

Vishay siliconix patents


Recent patent applications related to Vishay siliconix. Vishay siliconix is listed as an Agent/Assignee. Note: Vishay siliconix may have other listings under different names/spellings. We're not affiliated with Vishay siliconix, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "V" | Vishay siliconix-related inventors


Vertical sense devices in vertical trench mosfet

Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, a semiconductor device includes a main vertical trench metal oxide semiconductor field effect transistor (main-MOSFET). The main-MOSFET includes a plurality of parallel main trenches, wherein the main trenches comprise a first electrode coupled to... Vishay siliconix

Vertical sense devices in vertical trench mosfet

Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, an electronic circuit includes a vertical trench metal oxide semiconductor field effect transistor configured for switching currents of at least one amp and a current sensing field effect transistor configured to provide an indication... Vishay siliconix

Semiconductor device having multiple gate pads

Disclosed are semiconductor devices that include additional gate pads, and methods of fabricating and testing such devices. A device may include a first gate pad, a second gate pad, and a third gate pad. The first gate pad is connected to a gate including a gate oxide layer. The second... Vishay siliconix

Dual lead frame semiconductor package and manufacture

A semiconductor package and a method for making the same are provided. In the method, a clip is used to conduct a lead frame and at least one chip. The clip has at least one second connection segment, at least one third connection segment, and at least one intermediate connection... Vishay siliconix

Semiconductor device with non-uniform trench oxide layer

A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward... Vishay siliconix

Edge termination for super-junction mosfets

Edge termination for MOSFETs. In accordance with an embodiment of the present invention, a metal oxide semiconductor field effect transistor (MOSFET) includes a core region including a plurality of parallel core plates coupled to a source terminal of the MOSFET. The MOSFET also includes a termination region surrounding the core... Vishay siliconix

Semiconductor device with composite trench and implant columns

A metal insulator semiconductor field effect transistor (MISFET) such as a super junction metal oxide semiconductor FET with high voltage breakdown is realized by, in essence, stacking a relatively low aspect ratio column (trenches filled with dopant, e.g., p-type dopant) on top of a volume or volumes formed by implanting... Vishay siliconix

Method for fabricating stack die package

In one embodiment, a method can include coupling a gate and a source of a first die to a lead frame. The first die can include the gate and the source that are located on a first surface of the first die and a drain that is located on a... Vishay siliconix

Mosfet active area and edge termination area charge balance

A method for fabricating a MOSFET having an active area and an edge termination area is disclosed. The method includes forming a first plurality of implants at the bottom of trenches located in the active area and in the edge termination area. A second plurality of implants is formed at... Vishay siliconix

Trench mosfet with self-aligned body contact with spacer

Trench MOSFET with self-aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The semiconductor device also includes a body... Vishay siliconix

Structures and methods of fabricating dual gate devices

First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1 so that the surfaces are flush with adjacent surfaces. Then, shallow trenches are formed in the substrate between the deep... Vishay siliconix

Semiconductor device with trench-like feed-throughs

A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device is operated.... Vishay siliconix

Semiconductor device with non-uniform trench oxide layer

A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide layer is non-uniform, so that the thickness of the oxide layer toward the top of the trench is thinner than it is toward... Vishay siliconix








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