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Win Semiconductors Corp patents


Recent patent applications related to Win Semiconductors Corp. Win Semiconductors Corp is listed as an Agent/Assignee. Note: Win Semiconductors Corp may have other listings under different names/spellings. We're not affiliated with Win Semiconductors Corp, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "W" | Win Semiconductors Corp-related inventors


 new patent  Radio frequency device

A radio frequency (RF) device includes a chip comprising a plurality of vias and at least a hot via; a signal lead and a ground lead disposed under a back side of the chip; and a signal metal sheet, a first ground metal sheet and a second ground metal sheet... Win Semiconductors Corp

 new patent  Bulk acoustic wave resonator with a mass adjustment structure and its application to bulk acoustic wave filter

A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner... Win Semiconductors Corp

Anti-plasma adhesive tape and manufacturing method

An anti-plasma adhesive tape utilized for manufacturing a semiconductor package includes a substrate; and an adhesive layer formed on the substrate, wherein the adhesive layer is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator. The anti-plasma adhesive tape is attached to a backside of a lead... Win Semiconductors Corp

Thermal sensing acoustic wave resonator and acoustic wave filter having thermal sensing acoustic wave resonator

An acoustic wave filter having thermal sensing acoustic wave resonator comprises a substrate, a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. The thermal sensing acoustic wave resonator is one... Win Semiconductors Corp

Thermal sensor circuit

A thermal sensor circuit comprises a conversion circuit which is one of a buck DC-DC converter circuit and a boost DC-DC converter circuit, wherein the conversion circuit comprises an inductor and an output terminal. A thermal sensor senses a thermal variation correlated to a capacitance variation of the thermal sensor.... Win Semiconductors Corp

Integrated module of acoustic wave device with active thermal compensation and an active thermal compensating method thereof

An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic... Win Semiconductors Corp

Advanced moisture resistant structure of compound semiconductor integrated circuits

An advanced moisture resistant structure of compound semiconductor integrated circuit comprises a compound semiconductor substrate, a compound semiconductor epitaxial structure, a compound semiconductor integrated circuit and a moisture barrier layer. The compound semiconductor epitaxial structure is formed on the compound semiconductor substrate. The compound semiconductor integrated circuit is foimed on... Win Semiconductors Corp

Resonance structure of bulk acoustic wave resonator

A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection... Win Semiconductors Corp

Protective cover for an acoustic wave device and fabrication method thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein... Win Semiconductors Corp

Gate metal structure for compound semiconductor devices

An improved gate metal structure for compound semiconductor devices comprises sequentially a compound semiconductor substrate, a Schottky barrier layer, an insulating layer and a gate metal. The insulating layer has a gate recess. The surrounding and the bottom of the gate recess are defined by the insulating layer and the... Win Semiconductors Corp

Protection structure for semiconductor device package

A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed... Win Semiconductors Corp

Schottky barrier semiconductor device having a nanoscale film interface

A Schottky barrier semiconductor device having a nanoscale film interface comprises a Schottky barrier layer and a metal electrode; wherein a nanoscale film interface layer is formed on a top surface of the Schottky barrier layer, a thickness of the nanoscale film interface layer is greater than 3 Å and... Win Semiconductors Corp

Integrated structures of acoustic wave device and varactor, and acoustic wave device, varactor and power amplifier, and fabrication methods thereof

An integrated structure of acoustic wave device and varactor comprises an acoustic wave device and a varactor formed on a first part and a second part of a semiconductor substrate respectively. The acoustic wave device comprises an acoustic wave device upper structure and a first part of a bottom epitaxial... Win Semiconductors Corp

Protection structure for semiconductor device package

A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing... Win Semiconductors Corp

Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device

An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate, a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate; wherein... Win Semiconductors Corp

Layout compound semiconductor integrated circuits

A layout method for compound semiconductor integrated circuits, comprising following steps of: forming a first metal layer within a first circuit layout area which intersects with a second circuit layout area at an intersection area on a compound semiconductor substrate; defining an adjacent crossover area including said intersection area and... Win Semiconductors Corp

Method for fabricating a semiconductor integrated chip

The present invention relates to a compound semiconductor integrated circuit chip having a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. A first metal layer... Win Semiconductors Corp

Protective cover for an acoustic wave device and fabrication method thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial... Win Semiconductors Corp

Heterojunction bipolar transistor

A HBT on a GaAs substrate is presented, wherein its base comprises a first base layer comprising IniGa1-iAs with an Indium content i with a slope s1 and a second base layer on the emitter side comprising IniGa1-jAs with an Indium content j with a slope s2, and an average... Win Semiconductors Corp

High-frequency package

A high-frequency package comprises a ground lead occupying a side of the high-frequency package; and a signal lead comprising at least a protrusion protruding from a central portion of the signal lead; wherein the ground lead and the signal lead perform as a transmission line, and the at least a... Win Semiconductors Corp

High-frequency package

A high-frequency package comprises a die; a plurality of leads; and a die pad; wherein a surface of the die pad is lower than top surfaces of the plurality of leads, the die is disposed on the die pad with the lower surface, such that a top surface of the... Win Semiconductors Corp








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