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X fab Semiconductor Foundries Ag patents


Recent patent applications related to X fab Semiconductor Foundries Ag. X fab Semiconductor Foundries Ag is listed as an Agent/Assignee. Note: X fab Semiconductor Foundries Ag may have other listings under different names/spellings. We're not affiliated with X fab Semiconductor Foundries Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "X" | X fab Semiconductor Foundries Ag-related inventors


Semiconductor circuits, devices and methods

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to... X fab Semiconductor Foundries Ag

Carrier substrate for semiconductor structures suitable for a transfer by transfer print and manufacturing of the semiconductor structures on the carrier substrate

A carrier substrate for semiconductor structures which can be transferred by transfer printing, and manufacture of the semiconductor structures on the carrier substrate. The number of the required process steps and thus the required effort is to be generally reduced in the manufacture of component structures on a carrier substrate... X fab Semiconductor Foundries Ag

Semiconductor circuits, devices and methods

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to... X fab Semiconductor Foundries Ag

Method and component-arrangement for a transfer print between substrates

The transfer of devices or device components from a carrier substrate to a further carrier substrate or to a plurality of further carrier substrates can be performed with little effort (few transfer steps) to the at least one further carrier substrate. The method comprises producing first devices on the first... X fab Semiconductor Foundries Ag

Image lag free pixel

A CMOS image sensor pixel (200) comprising a photo-sensitive element (101) for generating a charge in response to incident light; a plurality of charge storage elements (103); a plurality of transfer gates (102) for enabling the transfer of charge between the photosensitive element and an associated one of the charge... X fab Semiconductor Foundries Ag

Thermopile test structure and methods employing same

A semiconductor product comprising: a semiconductor substrate and a test structure, the test structure comprising: a thermopile and at least one temperature sensitive element, the at least one temperature sensitive element being located in the substrate, or between the substrate and the thermopile.... X fab Semiconductor Foundries Ag

Planar coil

Individual coils as well as two or more coils arranged one over the other or one coil in combination with a sensor, which can be integrated into planar semiconductor technology are described. A coil comprises a turn and two supply lines for supplying current to the coil. The turn and... X fab Semiconductor Foundries Ag

Method for the formation of transistors pdso1 and fdso1 on a same substrate

The present invention relates to a method for forming an electronic device intended to accommodate at least one fully depleted transistor of the FDSOI type and at least one partially depleted transistor of the PDSOI type, from a stack of layers (10) comprising at least one insulating layer (100) topped... X fab Semiconductor Foundries Ag

Electrical conductive vias in a semiconductor substrate and a corresponding manufacturing method

A method is provided for producing at least one electrical via in a substrate, the method comprising: producing a protective layer over a component structure which has been produced or is present on a front side of the substrate; forming at least one contact hole which extends from a surface... X fab Semiconductor Foundries Ag

Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device

A method of fabricating a tunnel oxide layer for a semiconductor memory device, the method comprising: fabricating on a substrate a first oxide layer by an in-situ-steam-generation process; and fabricating at least one further oxide layer by a furnace oxidation process, wherein during fabrication of the at least one further... X fab Semiconductor Foundries Ag

Anti-reflective treatment of the rear side of a semiconductor wafer

A method for producing a semiconductor wafer, in which an optical anti-reflective layer (4) is formed on the backside of the wafer in order to optimize optical access (17) to or from CMOS devices (10) through the backside (32) of the wafer (1). The CMOS devices (10) are produced only... X fab Semiconductor Foundries Ag

Semiconductor device and methods of manufacture thereof

The invention provides a method for use in forming a semiconductor device, the semiconductor device comprising a primary area and a periphery area, the method comprising: providing a substrate on which is situated: a stack in the primary area, the stack comprising a first oxide layer on the substrate, an... X fab Semiconductor Foundries Ag

Optical sensor having two taps for photon-generated electrons of visible and ir light

An optical sensor in which photo currents generated by light in the visible and infrared wavelength ranges are to be tapped separately at pn junctions of active regions. The active regions include n- or p-doping and are formed in a p-substrate 52. The optical sensor comprises a surface-near first active... X fab Semiconductor Foundries Ag

Sleek serial interface for a wrapper boundary register (device and method)

Invention achieves reduced amount of terminals to control a test mode, test function and test results of a given standard for at least one “wrapped core” (40,100) (a core 100 surrounded by a wrapper boundary register (40) as “wrapper chain”). Test flexibility and speed of testing the core (100) are... X fab Semiconductor Foundries Ag

Light shield for light sensitive elements

A light shield for shielding a light sensitive element in an image sensor comprising a primary plate located such as to shield the light sensitive element from incident light, the primary plate comprising at least one aperture and the or each aperture being associated with a light blocking structure, wherein... X fab Semiconductor Foundries Ag

Fabrication of an optoelectronic semiconductor device and integrated circuit structure

There is provided a method for fabricating an optoelectronic semiconductor device (2,27) including a layer stack (1,26) that comprises a metallization structure (7,7′) including a contact region (8,11) for electrically contacting the semiconductor device (2,27). Moreover, a dielectric layer (12) and a semiconductor layer (3) are provided. The semiconductor layer... X fab Semiconductor Foundries Ag








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