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Xiamen Sanan Optoelectronics Technology Co Ltd patents


Recent patent applications related to Xiamen Sanan Optoelectronics Technology Co Ltd. Xiamen Sanan Optoelectronics Technology Co Ltd is listed as an Agent/Assignee. Note: Xiamen Sanan Optoelectronics Technology Co Ltd may have other listings under different names/spellings. We're not affiliated with Xiamen Sanan Optoelectronics Technology Co Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "X" | Xiamen Sanan Optoelectronics Technology Co Ltd-related inventors


Light emitting diode and fabrication method thereof

A light-emitting diode includes a material structure of barrier in the light-emitting well region to improve restriction capacity of electron holes, improving light-emitting efficiency of the LED chip under high temperature. The LED structure includes a Type I semiconductor layer, a Type II semiconductor layer and an active layer between... Xiamen Sanan Optoelectronics Technology Co Ltd

Nitride white-light light-emitting diode

A nitride white-light LED includes: a substrate; an epitaxial layer; an N-type electrode and a P-type electrode; channels are formed on the substrate and the epitaxial layer; temperature isolation layers are formed with low thermal conductivity material thereon to form three independent temperature zones (Zones I/II/III) on a single chip;... Xiamen Sanan Optoelectronics Technology Co Ltd

Flip-chip multi-junction solar cell and fabrication method thereof

A flip-chip multi junction solar cell chip integrated with a bypass diode includes from up to bottom: a glass cover; a transparent bonding layer; a front electrode; an n/p photoelectric conversion layer; a p/n tunnel junction; a structure layer of the n/p bypass diode; a first backside electrode; a second... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode and fabrication method thereof

A light-emitting diode includes: an epitaxial-laminated layer having from bottom up: an n-type ohmic contact layer, a first n-type transition layer, an n-type etching-stop layer, a second n-type transition layer, an n-type confinement layer, an active layer, a p-type confinement layer, a p-type transition layer and a p-type window layer;... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode chip and fabrication method

A light-emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions; and a light transmission layer having a plurality of light transmission portions between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission portions have a horizontal... Xiamen Sanan Optoelectronics Technology Co Ltd

Nitride light emitting diode and fabrication method thereof

A nitride light-emitting diode (LED) fabrication method includes: providing a glass substrate; stacking a buffer layer structure composed of circular SiAlN layers and AlGaN layers with the number of cycles 1-5; growing a non-doped GaN layer, an N-type layer, a quantum well layer and a P-type layer. By using the... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode and fabrication method thereof

A light-emitting diode (LED) structure and a fabrication method thereof effectively enhance external extraction efficiency of the LED, which includes: a light-emitting epitaxial laminated layer, a transparent dielectric layer, and a transparent conductive layer forming a reflectivity-enhancing system; and a metal reflective layer. The light-emitting epitaxial laminated layer has opposite... Xiamen Sanan Optoelectronics Technology Co Ltd

Package support, fabrication method and led package

A light-emitting diode (LED) package includes a substrate with upper and lower surfaces, including: a metal block; an electrically insulating region surrounding at least a portion of the metal block; an LED chip mounted on the substrate and in electrical communication with the metal block; and an encapsulant covering at... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode and fabrication method thereof

An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release... Xiamen Sanan Optoelectronics Technology Co Ltd

Semiconductor element and fabrication method thereof

A semiconductor element has a metal protective layer and a metal oxide protective layer formed on the substrate to prevent the Si substrate surface from forming an amorphous layer; and a transition layer to reduce lattice difference between the metal oxide protective layer and the III-IV-group buffer layer, thus improving... Xiamen Sanan Optoelectronics Technology Co Ltd

Semiconductor element and fabrication method thereof

A semiconductor element includes a super-lattice buffer layer including AlxN1-x layers and AlyO1-y layers (0<x<1, 0<y<1). The super-lattice buffer layer can mitigate corrosion to the side wall by chemical solution during chip fabrication, and improve chip yield. Fabrication the super-lattice buffer layer to achieve the effects can be realized, for... Xiamen Sanan Optoelectronics Technology Co Ltd

Led for plant illumination

A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting portion has a strained light-emitting layer with a component formula of GaXIn(1-X)AsYP(1-Y) (0<X<1 and 0<Y<1), and a barrier layer, forming a 2˜40-pair alternating-layer structure with the strained light-emitting layer.... Xiamen Sanan Optoelectronics Technology Co Ltd

Method for manufacturing a light emitting element

A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between different materials is changed and buffered through thermal treatment of annealing under H2 atmosphere or under H2 and NH3 mixed atmosphere, thus eliminating epitaxial wafer... Xiamen Sanan Optoelectronics Technology Co Ltd

Nitride light emitting diode

A nitride light emitting diode includes: an n-type nitride layer, a light emitting layer and a p-type nitride layer in sequence, wherein, the light emitting layer is a MQW structure composed of a barrier layer and a well layer, in which, an AlGaN electron tunneling layer is inserted into at... Xiamen Sanan Optoelectronics Technology Co Ltd

Nitride light emitting diode structure

A nitride light-emitting diode (LED) structure includes a substrate, a buffer layer, an N-type layer, a stress release layer, a quantum well light-emitting layer and a P-type layer, wherein, between the N-type layer and the stress release layer, an electric field distribution layer is inserted, which is an n-doped multi-layer... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diodes and fabrication method

A light emitting diode (LED) includes quantum dots serving as the quantum well layer in the multiple-quantum well (MQW) structure, which can greatly improve the combination efficiency of electrons and holes due to quantum confinement effect; a nanoscale metal reflective layer is formed between the quantum barrier layer with nanoscale... Xiamen Sanan Optoelectronics Technology Co Ltd

Patterned sapphire substrate and light emitting diode

A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density... Xiamen Sanan Optoelectronics Technology Co Ltd

Led structure and fabrication method

A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the... Xiamen Sanan Optoelectronics Technology Co Ltd

Flip-chip high-voltage light emitting device and fabrication method

A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a... Xiamen Sanan Optoelectronics Technology Co Ltd

Flip-chip light emitting device and fabrication method

A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate... Xiamen Sanan Optoelectronics Technology Co Ltd

Four-element light emitting diode with transparent substrate and preparation method

A four-element light emitting diode with a transparent substrate, comprising a AlGaInP light emitting diode (LED) epitaxial wafer, and the surface of a GaP layer of the AlGaInP-LED epitaxial wafer is roughened into a bonding surface, a film is plated on the bonding surface and is bonded with a transparent... Xiamen Sanan Optoelectronics Technology Co Ltd

Fabrication nitride light emitting diodes

A fabrication method of a nitride semiconductor LED includes, an AlxInyGa1-x-yN material layer is deposited by CVD between an AlN thin film layer by PVD and a gallium nitride series layer by CVD, to reduce the stress effect between the AlN thin film layer and the nitride layer, improve the... Xiamen Sanan Optoelectronics Technology Co Ltd

High-voltage light emitting diode chip and fabrication method

A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width≦0.4 μm, such as ≦0.3 μm), which improves single chip output, expands... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode

A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer, an active layer, and a second semiconductor layer electrically dissimilar to the first semiconductor layer; a transparent conductive layer with an opening portion; the first electrode electrically... Xiamen Sanan Optoelectronics Technology Co Ltd

Surface-mounted light-emitting device and fabrication method thereof

A surface-mounted light-emitting device is fabricated by epitaxial growth: forming the LED epitaxial structure over a growth substrate through epitaxial growth; chip fabrication: determining P and N electrode regions and an isolating region over the LED epitaxial structure surface and fabricating the P and N electrode pads and the insulator... Xiamen Sanan Optoelectronics Technology Co Ltd

Four-junction solar cell and fabrication method

A method of fabricating a four-junction solar cell includes: forming a first epitaxial structure comprising first and second subcells and a cover layer over a first substrate through a forward epitaxial growth, and forming a second epitaxial structure comprising third and fourth subcells over the second substrate; forming a groove... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode chip and fabrication method

A light emitting diode chip includes an epitaxial layer with a plurality of recess portions and protrusion portions over the top layer; a light transmission layer, located between top ends of adjacent protrusion portions and forming holes with the recess portions. The light transmission layer has a horizontal dimension larger... Xiamen Sanan Optoelectronics Technology Co Ltd

High-brightness light-emitting diode with surface microstructures

A high-brightness light-emitting diode with surface microstructure and preparation and screening methods thereof are provided. The ratio of total roughened surface area of light transmission surface of a light emitting diode to vertically projected area is greater than 1.5, and the peak density of light transmission surface is not less... Xiamen Sanan Optoelectronics Technology Co Ltd

Integrated led light-emitting device and fabrication method thereof

A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises... Xiamen Sanan Optoelectronics Technology Co Ltd

Light emitting diode package structure and fabrication method

A light emitting diode package structure includes: a first reflecting material layer with through holes; a flip chip on the first reflecting material layer, with the electrodes inlaid in the through holes of the first reflecting material layer; a first transparent material layer surrounding the side surface of the flip... Xiamen Sanan Optoelectronics Technology Co Ltd








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