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Zeno Semiconductor Inc patents


Recent patent applications related to Zeno Semiconductor Inc. Zeno Semiconductor Inc is listed as an Agent/Assignee. Note: Zeno Semiconductor Inc may have other listings under different names/spellings. We're not affiliated with Zeno Semiconductor Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "Z" | Zeno Semiconductor Inc-related inventors


Memory device comprising electrically floating body transistor

A semiconductor memory instance is provided that includes an array of memory cells. The array includes a plurality of semiconductor memory cells arranged in at least one column and at least one row. Each of the semiconductor memory cells includes a floating body region configured to be charged to a... Zeno Semiconductor Inc

Method of maintaining the state of semiconductor memory having electrically floating body transistor

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of... Zeno Semiconductor Inc

Semiconductor memory having both volatile and non-volatile functionality and operating

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile... Zeno Semiconductor Inc

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations. A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a... Zeno Semiconductor Inc

Memory cells, memory cell arrays, methods of using and methods of making

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second... Zeno Semiconductor Inc

Nand string utilizing floating body memory cell

NAND string configurations and semiconductor memory arrays that include such NAND string configurations are provided. Methods of making semiconductor memory cells used in NAND string configurations are also described.... Zeno Semiconductor Inc

Semiconductor memory device having an electrically floating body transistor

An IC may include an array of memory cells formed in a semiconductor, including memory cells arranged in rows and columns, each memory cell may include a floating body region defining at least a portion of a surface of the memory cell, the floating body region having a first conductivity... Zeno Semiconductor Inc

Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making

An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The link or string includes at least one contact configured to electrically connect the memory cells to at least one control line, and the number of... Zeno Semiconductor Inc

A semiconductor memory having both volatile and non-volatile functionality comprising resistive change material and operating

A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell, and a non-volatile memory comprising a bipolar resistive change element, and methods of operating.... Zeno Semiconductor Inc

Memory cell comprising first and second transistors and methods of operating

Semiconductor memory cells, array and methods of operating are disclosed. In one instance, a memory cell includes a bi-stable floating body transistor and an access device; wherein the bi-stable floating body transistor and the access device are electrically connected in series.... Zeno Semiconductor Inc

Method of maintaining the state of semiconductor memory having electrically floating body transistor

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of... Zeno Semiconductor Inc

Semiconductor memory having volatile and multi-bit non-volatile functionality and operating

A semiconductor memory cell, semiconductor memory devices comprising a plurality of the semiconductor memory cells, and methods of using the semiconductor memory cell and devices are described. A semiconductor memory cell includes a substrate having a first conductivity type; a first region embedded in the substrate at a first location... Zeno Semiconductor Inc

Semiconductor device having electrically floating body transistor, semiconductor device having both volatile and non-volatile functionality and operating

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from... Zeno Semiconductor Inc

Compact semiconductor memory device having reduced number of contacts, methods of operating and methods of making

An integrated circuit including a link or string of semiconductor memory cells, wherein each memory cell includes a floating body region for storing data. The link or siring includes at least one contact configured to electrically connect the memory cells to at least one control line, and the number of... Zeno Semiconductor Inc

Memory cells, memory cell arrays, methods of using and methods of making

A semiconductor memory cell and arrays of memory cells are provided In at least one embodiment, a memory cell includes a substrate having a top surface, the substrate having a first conductivity type selected from a p-type conductivity type and an n-type conductivity type; a first region having a second... Zeno Semiconductor Inc

Dual-port semiconductor memory and first in first out (fifo) memory having electrically floating body transistor

Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and... Zeno Semiconductor Inc

Memory device having electrically floating body transistor

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell selected from at least first and second states. A first region of the memory cell is in electrical contact with the floating body region. A second... Zeno Semiconductor Inc

Memory device comprising an electrically floating body transistor

A memory cell comprising includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.... Zeno Semiconductor Inc

Content addressable memory device having electrically floating body transistor

A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary... Zeno Semiconductor Inc

Asymmetric semiconductor memory device having electrically floating body transistor

Asymmetric, semiconductor memory cells, arrays, devices and methods are described. Among these, an asymmetric, bi-stable semiconductor memory cell is described that includes: a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with the floating... Zeno Semiconductor Inc

Systems and methods for reducing standby power in floating body memory devices

Methods, devices, arrays and systems for reducing standby power for a floating body memory array. One method includes counting bits of data before data enters the array, wherein the counting includes counting at least one of: a total number of bits at state 1 and a total number of all... Zeno Semiconductor Inc

Method of maintaining the state of semiconductor memory having electrically floating body transistor

Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of... Zeno Semiconductor Inc

Method of operating semiconductor memory device with floating body transistor using silicon controlled rectifier principle

Methods of operating semiconductor memory devices with floating body transistors, using a silicon controlled rectifier principle are provided, as are semiconductor memory devices for performing such operations. A method of maintaining the data state of a semiconductor dynamic random access memory cell is provided, wherein the memory cell comprises a... Zeno Semiconductor Inc

Semiconductor memory having both volatile and non-volatile functionality including resistance change material and operating

Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating... Zeno Semiconductor Inc

Memory device comprising electrically floating body transistor

A semiconductor memory instance is provided that includes an array of memory cells. The array includes a plurality of semiconductor memory cells arranged in at least one column and at least one row. Each of the semiconductor memory cells includes a floating body region configured to be charged to a... Zeno Semiconductor Inc

Semiconductor memory having both volatile and non-volatile functionality and operating

Semiconductor memory having both volatile and non-volatile modes and methods of operation. A semiconductor storage device includes a plurality of memory cells each having a floating body for storing, reading and writing data as volatile memory. The device includes a floating gate or trapping layer for storing data as non-volatile... Zeno Semiconductor Inc








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