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Aixtron Se patents


Recent patent applications related to Aixtron Se. Aixtron Se is listed as an Agent/Assignee. Note: Aixtron Se may have other listings under different names/spellings. We're not affiliated with Aixtron Se, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Aixtron Se-related inventors


Conveyor device for a substrate

A device for transporting a strip-type substrate through a reactor includes transport elements for holding the substrate. The transport elements are displaceable by a drive unit in a transport direction. ... Aixtron Se

Apparatus and method for generating a vapor for a cvd or pvd device

In a device and a method for generating vapor in a cvd or pvd device, particles are vaporized by bringing the particles into contact with a first heat transfer surface of a vaporization device. The vapor generated by vaporizing the particles is transported by a carrier gas out of the vaporization device and into a single or multistage modulation device. ... Aixtron Se

Device and method to control the uniformity of a gas flow in a cvd or an ald reactor or of a layer grown therein

A measuring device is provided for determining the position of a susceptor in a reactor housing. The measuring device includes a central element, which can be fastened on the susceptor at a predefined location, and a plurality of sensing arms, which protrude from the central element beyond an outer periphery of the susceptor. ... Aixtron Se

Device for depositing a layer on a substrate

A device for depositing a layer on a substrate includes a process chamber and a gas inlet element. The substrate is moved in a movement direction in the process chamber during a coating process. ... Aixtron Se

Formation of a layer on a semiconductor substrate

Described herein are techniques for forming an epitaxial iii-v layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). ... Aixtron Se

Exhaust manifold in a cvd reactor

Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). ... Aixtron Se

Substrate holding device

A device for holding at least one substrate in a process chamber of a cvd or pvd reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate is flanked by positioning edges for positioning a respective section of an edge of the substrate. ... Aixtron Se

Substrate carrier that carries a substrate on each of two broad sides of the substrate carrier that face away from each other

A substrate carrier is configured to be arranged in a cvd or pvd reactor, in particular for the deposition of carbon nanotubes or graphene. The substrate carrier has a first broadside surface and a second broadside surface facing away from the first broad-side surface. ... Aixtron Se

Coated flat component in a cvd reactor

A cvd reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. ... Aixtron Se

Transfer module for a multi-module apparatus

A transfer module for a multi-module apparatus may include a) a plurality of facets, wherein a facet of said plurality comprises a port configured to hold a module; and b) at least one robot arm configured to move an object to and from the module through said port via a combination of extension and rotational movements.. . ... Aixtron Se

Device and method for generating a vapor for a cvd or pvd device from multiple liquid or solid source materials

In a method and a device for generating vapor for a cvd or pvd device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which is transported by a carrier gas from the first heat transfer body into a second heat transfer body arranged after the first heat transfer body. ... Aixtron Se

Device for depositing nanotubes

A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas inlet element disposed in the process chamber housing. ... Aixtron Se

Device and method for determining the concentration of a vapor by means of an oscillating body sensor

A device and a method determines the concentration of a vapor in a volume, in particular for determining or controlling the mass flow of the vapor being conveyed through the volume by a carrier gas. The device comprises a sensor, which supplies a sensor signal that is dependent on the concentration or partial pressure of the vapor. ... Aixtron Se

Heating device

The invention relates to a device with at least one first electrically conductive contact plate (11) and with at least one second electrically conductive contact plate (12), and with a plurality of electrically parallel-connected first heating elements (1 to 9) each with at least one resistance heating unit (1.3 to 9.3), wherein each of the heating elements (1 to 9) is connected with the first contact plate (11) by means of a first terminal contact (1.1 to 9.1), and with the second contact plate (12) by means of a second terminal contact (1.2 to 9.2), wherein the two contact plates (11, 12) lie in a shared first plane (e1), wherein the resistance heating units (1.3 to 9.3) are arranged along a spiral or circular arc line around a center of the device. In order to increase the service life of the device while reducing manufacturing costs, it is proposed that several heating units (1.3 to 9.3) be situated along the circular arc or spiral line, in particular lying one behind the other or nestled into each other, and that the two first and second contact plates (11, 12) lying in a shared first plane (e1) exhibit contact extensions (11′, 12′) that intermesh in a comb-like manner.. ... Aixtron Se








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