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Alpha And Omega Semiconductor Incorporated patents


Recent patent applications related to Alpha And Omega Semiconductor Incorporated. Alpha And Omega Semiconductor Incorporated is listed as an Agent/Assignee. Note: Alpha And Omega Semiconductor Incorporated may have other listings under different names/spellings. We're not affiliated with Alpha And Omega Semiconductor Incorporated, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Alpha And Omega Semiconductor Incorporated-related inventors


Cascoded high voltage junction field effect transistor

A cascoded junction field transistor (jfet) device comprises a first stage high voltage jfet cascoded to a second stage low voltage jfet wherein one of the first and second stages jfet is connected to a drain electrode of another jfet stage.. . ... Alpha And Omega Semiconductor Incorporated

Folded channel trench mosfet

A trench mosfet device includes a body, region and source region that undulate along a channel width direction of the mosfet device such that the body region and source region have variations in depth along the channel width direction. The undulations increase a channel width of the mosfet device.. ... Alpha And Omega Semiconductor Incorporated

Hard switching disable for switching power device

A controller for driving a power switch incorporates a hard turn-on disable circuit to prevent the power switch from turning on when the power switch is sustaining a high voltage value. The hard turn-on disable circuit includes a hard turn-on detection circuit and a protection logic circuit. ... Alpha And Omega Semiconductor Incorporated

Active clamp overvoltage protection for switching power device

A controller for driving a power switch incorporates a protection circuit to protect the power switch from fault conditions, such as over-voltage conditions or power surge events. The protection circuit includes a fault detection circuit and a protection gate drive circuit. ... Alpha And Omega Semiconductor Incorporated

Process method and structure for high voltage mosfets

This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches each having a trench endpoint with an endpoint sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. ... Alpha And Omega Semiconductor Incorporated

Nanotube termination structure for power semiconductor devices

Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a termination structure is formed in the termination area and includes an array of termination cells formed in the termination area, the array of termination cells including a first termination cell at an interface to the active area to a last termination cell, each termination cell in the array of termination cells being formed in a mesa of the first semiconductor layer and having a first width; and an end termination cell being formed next to the last termination cell in the termination area, the end termination cell being formed in an end mesa of the first semiconductor layer and having a second width greater than the first width.. ... Alpha And Omega Semiconductor Incorporated

Jfet and ldmos transistor formed using deep diffusion regions

A power integrated circuit and a method of forming includes forming a first body region of a first conductivity type in a first deep well of a second conductivity type. The power integrated circuit includes a first deep diffusion region formed under the first body region and in electrical contact with the first body region where the first deep diffusion region is formed by performing first and second ion implantations of dopants of the first conductivity type and using second implant energy greater than the first implant energy.. ... Alpha And Omega Semiconductor Incorporated

Molded power module having single in-line leads

A power module has a lead frame, a first power chip, a second power chip, a plurality of single in-line leads, a gate drive and protection integrated circuit (ic), a plurality of bonding wires and a molding encapsulation. The first and second power chips are attached to a top surface of the lead frame. ... Alpha And Omega Semiconductor Incorporated

Switch circuit with controllable phase node ringing

A switch circuit includes a first mos transistor and a second mos transistor of a same conductivity type connected in parallel between a first terminal and a second terminal of the switch circuit, the first and second mos transistors having respective gate terminals coupled to the control terminal to receive a control signal to turn the first and second mos transistors on or off. The first mos transistor is characterized by a first reverse gate-to-drain capacitance (crss) and the second mos transistor is characterized by a second crss that is greater than the first crss.. ... Alpha And Omega Semiconductor Incorporated

Molded intelligent power module and method of making the same

An intelligent power module (ipm) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (mosfets), a tie bar, a metal slug, a plurality of spacers, a plurality of leads and a molding encapsulation. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth mosfets, the tie bar and the plurality of spacers. ... Alpha And Omega Semiconductor Incorporated

Molded intelligent power module

An intelligent power module (ipm) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (mosfets), a tie bar, an ic, a plurality of leads and a molding encapsulation. The first mosfet is attached to the first die paddle. ... Alpha And Omega Semiconductor Incorporated

Composite masking self-aligned trench mosfet

Aspects of the present disclosure discloses a method for fabricating a trench mosfet device comprising simultaneously forming a narrow trench and a wide trench into a semiconductor substrate using a mask to defines the narrow trench and the wide trench, forming an insulating layer over the semiconductor substrate with a first portion that fills up the narrow trench and a second portion that partially fills the wide trench, removing the second portion from the wide trench completely and leaving the narrow trench filled with the first portion, forming a gate electrode, forming a body region in a top portion of the semiconductor substrate, forming a source region in a portion of the body region, removing the first portion of nitride from the narrow trench, and forming a contact plug by filling a second conductive material in the narrow trench.. . ... Alpha And Omega Semiconductor Incorporated

Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (tvs)

A transient-voltage suppressing (tvs) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the zener diode are disposed in the semiconductor substrate and each constituting a vertical pn junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied by the tvs device. ... Alpha And Omega Semiconductor Incorporated

Closed cell lateral mosfet using silicide source and method of forming

A closed cell lateral mosfet device includes minimally sized source/body contacts formed in source cells with silicided source and body diffusion regions formed therein. In this manner, the cell pitch of the cellular transistor array is kept small while the ruggedness of the transistor is ensured. ... Alpha And Omega Semiconductor Incorporated

03/01/18 / #20180062386

Usb type-c load switch esd protection

A mosfet and an electrostatic discharge (esd) protection device on a common chip includes a mosfet with a source, a gate, and a drain, and an esd protection device configured to implement a diode function that is biased to prevent current from flowing through the common chip from the source to the drain.. . ... Alpha And Omega Semiconductor Incorporated

01/25/18 / #20180026094

Semiconductor device with field threshold mosfet for high voltage termination

This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality p-channel mosfets. ... Alpha And Omega Semiconductor Incorporated

01/25/18 / #20180026025

Tvs structures for high surge and low capacitance

A transient voltage suppressing (tvs) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The tvs device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. ... Alpha And Omega Semiconductor Incorporated

01/04/18 / #20180006026

Bidirectional switch having back to back field effect transistors

A bi-directional semiconductor switching device includes first and second vertical field effect transistors (fets) formed in tandem from a semiconductor substrate. A source for the first fet is on a first side of the substrate and a source for the second fet is on a second side of the substrate opposite the first side. ... Alpha And Omega Semiconductor Incorporated

01/04/18 / #20180005959

Trench mosfet device and the preparation method thereof

A trench-type metal-oxide-semiconductor field-effect transistor (mosfet) device and a fabrication method are disclosed. The trench mosfet device comprises a semiconductor substrate of a first conductivity type. ... Alpha And Omega Semiconductor Incorporated

01/04/18 / #20180005912

Wafer level chip scale package structure and manufacturing method thereof

A wafer level chip scale package (wlcsp) structure and a manufacturing method are disclosed. The wlcsp structure comprises a semiconductor die and a stack. ... Alpha And Omega Semiconductor Incorporated

12/28/17 / #20170373186

Mosfet device and fabrication

A semiconductor device, comprising: a substrate; an active gate trench in the substrate; a source polysilicon pickup trench in the substrate; a polysilicon electrode disposed in the source polysilicon pickup trench; a gate pickup trench in the substrate; a first conductive region and a second conductive region disposed in the gate pickup trench, the first conductive region and the second conductive region being separated by oxide, wherein at least a portion of the oxide surrounding the first conductive region in the gate pickup trench is thicker than at least a portion of the oxide under the second conductive region; and a body region in the substrate.. . ... Alpha And Omega Semiconductor Incorporated

12/28/17 / #20170373185

Nano mosfet with trench bottom oxide shielded and third dimensional p-body contact

A semiconductor power device may include a lightly doped layer formed on a heavily doped layer. One or more devices are formed in the lightly doped layer. ... Alpha And Omega Semiconductor Incorporated

12/28/17 / #20170373158

Circuit configuration and manufacturing processes for vertical transient voltage suppressor (tvs) and emi filter

A vertical tvs (vtvs) circuit includes a semiconductor substrate for supporting the vtvs device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel vtvs. ... Alpha And Omega Semiconductor Incorporated

12/28/17 / #20170373139

Power trench mosfet with improved unclamped inductive switching (uis) performance and preparation method thereof

A trench type power semiconductor device with improved breakdown voltage and uis performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole. ... Alpha And Omega Semiconductor Incorporated

12/28/17 / #20170372987

Semiconductor power device having single in-line lead module and method of making the same

A semiconductor power device is disclosed. The semiconductor power device comprises a lead frame unit, two or more pluralities of single in-line leads, two or more semiconductor chip stacks, and a molding encapsulation. ... Alpha And Omega Semiconductor Incorporated

12/21/17 / #20170365710

Lateral super-junction mosfet device and termination structure

A lateral superjunction mosfet device includes multiple transistor cells connected to a lateral superjunction structure, each transistor cell including a conductive gate finger, a source region finger, a body contact region finger and a drain region finger arranged laterally within each transistor cell. Each of the drain region fingers, the source region fingers and the body contact region fingers is a doped region finger having a termination region at an end of the doped region finger. ... Alpha And Omega Semiconductor Incorporated

12/21/17 / #20170365704

Vertical dmos transistor

A transistor includes a semiconductor body; a body region of a first conductivity type formed in the semiconductor body; a gate electrode formed partially overlapping the body region and insulated from the semiconductor body by a gate dielectric layer; a source region of a second conductivity type formed in the body region on a first side of the gate electrode; a trench formed in the semiconductor body on a second side of the gate electrode, the trench being lined with a sidewall dielectric layer and filled with a bottom dielectric layer and a conductive layer above the bottom dielectric layer, the conductive layer being electrically connected to the gate electrode; and a doped sidewall region of the second conductivity type formed in the semiconductor body along the sidewall of the trench where the doped sidewall region forms a vertical drain current path for the transistor.. . ... Alpha And Omega Semiconductor Incorporated

11/23/17 / #20170338337

Device structure having inter-digitated back to back mosfets

A bi-directional switch device includes two inter-digitated back-to-back vertical metal oxide semiconductor field effect transistors (mosfets) formed on a substrate with their drains connected together, but otherwise isolated from each other.. . ... Alpha And Omega Semiconductor Incorporated

11/23/17 / #20170338307

Nanotube semiconductor devices

Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer formed thereon and of the opposite conductivity type, and a first epitaxial layer formed on mesas of the second semiconductor layer. ... Alpha And Omega Semiconductor Incorporated

10/05/17 / #20170288066

Diode structures with controlled injection efficiency for fast switching

This invention discloses a semiconductor device disposed in a semiconductor substrate. The semiconductor device includes a first semiconductor layer of a first conductivity type on a first major surface. ... Alpha And Omega Semiconductor Incorporated

10/05/17 / #20170288028

Self-aligned contact for trench power mosfet

Embodiments of the present disclosure provide a self-aligned contact for a trench power mosfet device. The device has a layer of nitride provided over the conductive material in the gate trenches and over portions of mesas between every two adjacent contact structures. ... Alpha And Omega Semiconductor Incorporated

10/05/17 / #20170287903

Variable snubber for mosfet application

Aspects of the present disclosure describe mosfet devices that have snubber circuits. The snubber circuits comprise one or more resistors with a dynamically controllable resistance that is controlled by changes to a gate and/or drain potentials of the one or more mosfet structures during switching events.. ... Alpha And Omega Semiconductor Incorporated

09/14/17 / #20170263727

Lateral pnp bipolar transistor with narrow trench emitter

A lateral bipolar transistor includes trench emitter and trench collector regions to form ultra-narrow emitter regions, thereby improving emitter efficiency. The same trench process is used to form the emitter/collector trenches as well as the trench isolation structures so that no additional processing steps are needed to form the trench emitter and collector. ... Alpha And Omega Semiconductor Incorporated

08/17/17 / #20170236903

Process method and structure for high voltage mosfets

This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches formed at a top portion of the semiconductor substrate extending laterally across the semiconductor substrate along a longitudinal direction each having a nonlinear portion comprising a sidewall perpendicular to a longitudinal direction of the trench and extends vertically downward from a top surface to a trench bottom surface. ... Alpha And Omega Semiconductor Incorporated

08/17/17 / #20170236895

Semiconductor device with thresholdmosfet for high voltage termination

This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer and having an active cell area and an edge termination area. The edge termination area comprises a plurality p-channel mosfets. ... Alpha And Omega Semiconductor Incorporated

07/27/17 / #20170213894

Dual channel trench ldmos transistors with drain superjunction structure integrated therewith

A dual channel trench ldmos transistor includes a semiconductor layer of a first conductivity type formed on a substrate; a first trench formed in the semiconductor layer where a trench gate is formed in an upper portion of the first trench; a body region of the second conductivity type formed in the semiconductor layer adjacent the first trench; a source region of the first conductivity type formed in the body region and adjacent the first trench; a planar gate overlying the body region; a drain drift region of the first conductivity type formed in the semiconductor layer and in electrical contact with a drain electrode; and alternating n-type and p-type regions formed in the drain drift region with higher doping concentration than the drain-drift regions to form a super-junction structure in the drain drift region.. . ... Alpha And Omega Semiconductor Incorporated

07/27/17 / #20170213815

Optimized configurations to integrate steering diodes in low capacitance transient voltage suppressor (tvs)

A transient-voltage suppressing (tvs) device disposed on a semiconductor substrate including a low-side steering diode, a high-side steering diode integrated with a main zener diode for suppressing a transient voltage. The low-side steering diode and the high-side steering diode integrated with the zener diode are disposed in the semiconductor substrate and each constituting a vertical pn junction as vertical diodes in the semiconductor substrate whereby reducing a lateral area occupied by the tvs device. ... Alpha And Omega Semiconductor Incorporated

07/13/17 / #20170200705

Power device and preparation method thereof

A power device including a low-side mosfet, a high-side mosfet and an integrated control ic chip is disclosed. The power device further includes a substrate comprising a first mounting area having a first group of welding discs and a second mounting area having a second group of welding discs; a first chip flipped and attached to the first mounting area; a second chip flipped and attached to the second mounting area; a metal clip; and a molding body covering a front surface of the substrate, the first chip, the second chip and the metal clip. ... Alpha And Omega Semiconductor Incorporated

06/29/17 / #20170186675

Power semiconductor device with small contact footprint and the preparation method

A power semiconductor package has a small footprint. A preparation method is used to fabricate the power semiconductor package. ... Alpha And Omega Semiconductor Incorporated

06/22/17 / #20170179107

Transient voltage suppressor (tvs) with reduced breakdown voltage

A low capacitance transient voltage suppressor with snapback control and a reduced voltage punch-through breakdown mode includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. ... Alpha And Omega Semiconductor Incorporated

06/01/17 / #20170154957

Compact cmos device isolation

An integrated circuit uses a compact cmos device isolation scheme which forms a ring of n-well housing pmos devices to encircle the p-well housing nmos devices in a circuit block. An n-type buried layer is formed under the p-well and extends partially under the surrounding n-well. ... Alpha And Omega Semiconductor Incorporated

05/18/17 / #20170141225

Top drain ldmos

In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (td-ldmos) device supported on a semiconductor substrate. The td-ldmos includes a source electrode disposed on a bottom surface of the semiconductor substrate. ... Alpha And Omega Semiconductor Incorporated

05/11/17 / #20170133473

Split-gate trench power mosfet with protected shield oxide

A plurality of gate trenches is formed into a semiconductor substrate in an active cell region. One or more other trenches are formed in a different region. ... Alpha And Omega Semiconductor Incorporated

04/06/17 / #20170098695

Fabrication of shielded gate trench mosfet with increased source-metal contact

Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top surface into the semiconductor substrate; forming a gate electrode in the gate trench; forming a curved sidewall portion along at least a portion of a sidewall of the gate trench; forming a body region adjacent to the gate trench; forming a source region embedded in the body region, including disposing source material in a region that is along at least a part of the curved sidewall portion; forming a gate top dielectric layer over the gate electrode and having a top side that is below at least a portion of the source region; and forming a metal layer over at least a portion of a gate trench opening and at least a portion of the source region.. . ... Alpha And Omega Semiconductor Incorporated

04/06/17 / #20170098626

Battery protection package and process of making the same

The present invention discloses small-size battery protection packages and provides a process of fabricating small-size battery protection packages. A battery protection package includes a first common-drain metal oxide semiconductor field effect transistor (mosfet), a second common-drain mosfet, a power control integrated circuit (ic), a plurality of solder balls, a plurality of conductive bumps, and a packaging layer. ... Alpha And Omega Semiconductor Incorporated

03/30/17 / #20170093281

System and method for extending the maximum duty cycle of a step-down switching converter without maximum duty control

The invention proposes a system and method for extending the maximum duty cycle of a step-down switching converter to nearly 100% while maintaining a constant switching frequency. The system includes a voltage mode or current mode step-down converter driven by a leading edge blanking (leb) signal, which operates at the desired switching frequency. ... Alpha And Omega Semiconductor Incorporated

03/23/17 / #20170084694

Nanotube semiconductor devices

Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a method for forming a semiconductor device includes forming a first epitaxial layer on sidewalls of trenches and forming second epitaxial layer on the first epitaxial layer where charges in the doped regions along the sidewalls of the first and second trenches achieve charge balance in operation. ... Alpha And Omega Semiconductor Incorporated

03/02/17 / #20170062415

Jfet and ldmos transistor formed using deep diffusion regions

A power integrated circuit includes a double-diffused metal-oxide-semiconductor (ldmos) transistor formed in a first portion of the semiconductor layer with a channel being formed in a first body region. The power integrated circuit includes a first deep diffusion region formed in the first deep well under the first body region and in electrical contact with the first body region and a second deep diffusion region formed in the first deep well under the drain drift region and in electrical contact with the first body region. ... Alpha And Omega Semiconductor Incorporated

03/02/17 / #20170059630

Voltage detection circuit and a method of detecting voltage changes

A power conversion system and a method for voltage change detection, specifically, relates to a detection circuit implemented in the ac-dc power converter, detect the voltage change. The ac input voltage is rectified to convert into a dc input voltage transmitted to a detection unit generating a detection voltage signal at different logical states corresponding to the input voltage changes. ... Alpha And Omega Semiconductor Incorporated

02/16/17 / #20170047853

Flyback converter output current evaluation circuit and evaluation method

. . An output current calculating circuit for a flyback converter operating under ccm and dcm is disclosed. The off current value ioff and the blanking current value ileb flowing through a sensing resistor are calculated using a detection module and are summed together using a current summing unit. ... Alpha And Omega Semiconductor Incorporated

02/02/17 / #20170033060

Battery protection package and process of making the same

The present invention discloses small-size battery protection packages and provides a process of fabricating small-size battery protection packages. A battery protection package includes a first common-drain metal oxide semiconductor field effect transistor (mosfet), a second common-drain mosfet, a power control integrated circuit (ic), a plurality of solder balls, a plurality of conductive bumps, and a packaging layer. ... Alpha And Omega Semiconductor Incorporated

01/26/17 / #20170025356

Method and structure for wafer level packaging with large contact area

A method to provide a wafer level package with increasing contact pad area comprising the steps of forming a first packaging layer on wafer top surface, grinding the wafer back surface and etch through holes, depositing a metal to fill the through holes and covering wafer backside, cutting through the wafer from wafer backside forming a plurality of grooves separating each chip then depositing a second packaging layer filling the grooves and covering the wafer back metal, reducing the first packaging layer thickness to expose the second packaging layer filling the grooves and forming a plurality of contact pads overlaying the first packaging layer thereafter cutting through the second packaging layer in the grooves to form individual package.. . ... Alpha And Omega Semiconductor Incorporated








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