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Alta Devices Inc patents


Recent patent applications related to Alta Devices Inc. Alta Devices Inc is listed as an Agent/Assignee. Note: Alta Devices Inc may have other listings under different names/spellings. We're not affiliated with Alta Devices Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Alta Devices Inc-related inventors


Off-axis epitaxial lift off process

Embodiments described herein provide processes for forming and removing epitaxial films and materials from growth wafers by epitaxial lift off (elo) processes. In some embodiments, the growth wafer has edge surfaces with an off-axis orientation which is utilized during the elo process. ... Alta Devices Inc

Optoelectronic device with dielectric layer and method of manufacture

An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. ... Alta Devices Inc

Charging station for mobile device with solar panel

A charging device configured to charge a mobile device through the solar cells integrated on the mobile device. The charging device converts wall power to light energy which can be absorbed by the solar cells and then converted to electricity for storage in the rechargeable battery of the mobile device. ... Alta Devices Inc

Multi-junction optoelectronic device

An optoelectronic semiconductor device is disclosed. The device comprises a plurality of stacked p-n junctions (e.g., multi junction device). ... Alta Devices Inc

High growth rate deposition for group iii/v materials

Aspects of the disclosure relate to processes for epitaxial growth of group iii/v materials at high rates, such as about 30 μm/hr or greater, for example, about 40 μm/hr, about 50 μm/hr, about 55 μm/hr, about 60 μm/hr, about 70 μm/hr, about 80 μm/hr, and about 90-120 μm/hr deposition rates. The group iii/v materials or films may be utilized in solar, semiconductor, or other electronic device applications. ... Alta Devices Inc

Self-bypass diode function for gallium arsenide photovoltaic devices

Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. ... Alta Devices Inc

Method for interconnecting solar cells

A photovoltaic module comprises a back substrate having a plurality of conductive interconnects on top thereof. A conductive interconnect includes a first contact region and a second contact region. ... Alta Devices Inc

Method for selectively coloring metal contacts in optoelectronic device

A method of fabricating an optoelectronic device includes the steps of providing a semiconductor unit and forming a plurality of metal contacts on a surface of the semiconductor unit for electrical conduction. The method further includes the step of forming a plurality of color coating regions on top of the plurality of metal contacts, the plurality of color coating regions imparting a color different than a color of the plurality of metal contacts.. ... Alta Devices Inc

Versatile flexible circuit interconnection for flexible solar cells

A flexible circuit that allows a standardized connection interface to connect flexible solar cell(s) for easy integration into electronics devices. This interconnection scheme does not limit the intrinsic solar cell flexibility and may conform to standard design practices in electronic device manufacturing. ... Alta Devices Inc

Multi-junction optoelectronic device with group iv semiconductor as a bottom junction

A multi-junction optoelectronic device and method of manufacture are disclosed. The method comprises providing a first p-n structure on a substrate, wherein the first p-n structure comprises a first base layer of a first semiconductor with a first bandgap such that a lattice constant of the first semiconductor matches a lattice constant of the substrate, and wherein the first semiconductor comprises a group iii-v semiconductor. ... Alta Devices Inc

Forming front metal contact on solar cell with enhanced resistance to stress

System and method of providing a photovoltaic (pv) cell having a cushion layer to alleviate stress impact between a front metal contact and a thin film pv layer. A cushion layer is disposed between an extraction electrode and a photovoltaic (pv) surface. ... Alta Devices Inc

Via structures for solar cell interconnection in solar module

System and method of providing a photovoltaic (pv) cell with a complex via structure in the substrate that has a primary via for containing a conductive material and an overflow capture region for capturing an overflow of the conductive material from the primary via. The conductive filling in the primary via may serve as an electrical contact between the pv cell and another pv cell. ... Alta Devices Inc

Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching

A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. ... Alta Devices Inc

Reflector and susceptor assembly for chemical vapor deposition reactor

A reactor for chemical vapor deposition is equipped with an ir radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear ir heater lamps arranged in a parallel array. A set of primary ir radiation reflectors beneath the lamps directs ir radiation back toward the susceptor in a pattern selected to provide uniform ir irradiation of the susceptor assembly to thereby uniformly heat the substrates. ... Alta Devices Inc








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