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American Air Liquide Inc patents


Recent patent applications related to American Air Liquide Inc. American Air Liquide Inc is listed as an Agent/Assignee. Note: American Air Liquide Inc may have other listings under different names/spellings. We're not affiliated with American Air Liquide Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | American Air Liquide Inc-related inventors


Enhanced waste heat recovery using a pre-reformer combined with oxygen and fuel pre-heating for combustion

Disclosed are methods for operating a glass furnace, the method comprises the steps of feeding a non-pre-reformed hydrocarbon fuel gas stream to a pre-reformer forming a pre-reformed hydrocarbon fuel gas stream, feeding the pre-reformed hydrocarbon fuel gas stream to burners of the furnace, combusting oxidant and the pre-reformed hydrocarbon fuel gas with the burners to produce flue gas, heating air through heat exchange with the flue gas at a recuperator, and transferring heat from heated air to pre-reformer tubes of the pre-reformer. A glass furnace system is also disclosed.. ... American Air Liquide Inc

Alkylamino-substituted halocarbosilane precursors

Disclosed are si-containing film forming compositions comprising alkylamino-substituted halocarbosilane precursors, methods of synthesizing the same, and their use for vapor deposition processes.. . ... American Air Liquide Inc

Preparation of si-h containing iodosilanes via halide exchange reaction

Methods of synthesizing si—h containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.. . ... American Air Liquide Inc

Method of etching semiconductor structures with etch gas

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.. ... American Air Liquide Inc

Carbosilane substituted amine precursors for deposition of si-containing films and methods thereof

Disclosed are si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (r1)an(—sihr2—ch2—sih2r3)3-a, wherein a=0 or 1; r1 is h, a c1 to c6 alkyl group, or a halogen; r2 and r3 is each independently h; a halogen; an alkoxy group having the formula or′, wherein r′ is an alkyl group (c1 to c6); or an alkylamino group having the formula nr″2, wherein each r″ is independently h, a c1-c6 alkyl group, a c1-c6 alkenyl group, or a c3-c10 aryl or heterocycle group. ... American Air Liquide Inc

Adjustable cylinder bracket

A cylinder transport and mounting system is provided. This system includes a object mounting yoke, and at least one bracket selected from the group consisting of a conveyance mounting bracket, and user mounting bracket, wherein the cylinder mounting yoke is configured to attach securely to a cylinder and to detachably interface with the conveyance mounting bracket and/or to detachably interface with the user mounting bracket.. ... American Air Liquide Inc

Adjustable cylinder bracket

A cylinder transport and mounting system is provided. This system includes a object mounting yoke, and at least one bracket selected from the group consisting of a conveyance mounting bracket, and user mounting bracket, wherein the cylinder mounting yoke is configured to attach securely to a cylinder and to detachably interface with the conveyance mounting bracket and/or to detachably interface with the user mounting bracket.. ... American Air Liquide Inc

Nitrogen-containing compounds for etching semiconductor structures

A method for etching silicon-containing films is disclosed. The method includes the steps of introducing a vapor of a nitrogen containing etching compound into a reaction chamber containing a silicon-containing film on a substrate, wherein the nitrogen containing etching compound is an organofluorine compound containing at least one c≡n or c═n functional group; introducing an inert gas into the reaction chamber; and activating a plasma to produce an activated nitrogen containing etching compound capable of etching the silicon-containing film from the substrate.. ... American Air Liquide Inc

Method and burner using the curie effect for controlling reactant velocity for operation in pre-heated and non-pre-heated modes

Methods, burner, apparatuses, and systems are provided for controlling a velocity of a jet of gas exiting a burner when the gas is heated or not and at a corresponding second higher temperature or lower first temperature. Through the use of a temperature-sensitive magnetic valve, the flow of a gas can be redirected to maintain velocity of the gas as delivered to a combustion chamber based on the temperature of the gas. ... American Air Liquide Inc

Chemistries for tsv/mems/power device etching

Replacement chemistries for the cc4f8 passivation gas in the bosch etch process and processes for using the same are disclosed. These chemistries have the formula cxhyfz, with 1 ≦x<7, 1≦y≦13, and 1≦z≦13. ... American Air Liquide Inc

Fluorocarbon molecules for high aspect ratio oxide etch

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). ... American Air Liquide Inc








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