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Applied Materials Inc patents
Recent patent applications related to Applied Materials Inc. Applied Materials Inc is listed as an Agent/Assignee. Note: Applied Materials Inc may have other listings under different names/spellings. We're not affiliated with Applied Materials Inc, we're just tracking patents.
ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Applied Materials Inc-related inventors
High performance flow batteries, based on alkaline zinc/ferro-ferricyanide rechargeable (“znfe”) and similar flow batteries, may include one or more of the following improvements. First, the battery design has a cell stack comprising a low resistance positive electrode in at least one positive half cell and a low resistance negative electrode in at least one negative half cell, where the positive electrode and negative electrode resistances are selected for uniform high current density across a region of the cell stack. ... Applied Materials Inc
Self-aligned process for sub-10nm fin formation
Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. ... Applied Materials Inc
Method for optimizing dry absorber efficiency and lifetime in epitaxial applications
Increasing efficiency of absorbers is provided herein. In some embodiments, a method of processing a substrate may include determining a quantity of a removal species in an effluent stream flowing from a semiconductor processing chamber, wherein determining comprises: detecting or predicting a quantity of the removal species upstream of a chamber abatement apparatus in the effluent stream flowing from the semiconductor processing chamber; and removing the removal species from the effluent stream with the chamber abatement apparatus if the determined quantity of the removal species exceeds a threshold value of the removal species.. ... Applied Materials Inc
Doping control of metal nitride films
Described are methods for controlling the doping of metal nitride films such as tan, tin and mnn. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. ... Applied Materials Inc
Slurry for polishing of integrated circuit packaging
A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. ... Applied Materials Inc
Hybrid carbon hardmask for lateral hardmask recess reduction
Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. ... Applied Materials Inc
Asymmetrical rf drive for electrode of plasma chamber
Rf power is coupled to one or more rf drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of rf power coupled to the rf drive points (51-52,55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of rf power coupled to the rf drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, rf power is coupled to one or more rf drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. ... Applied Materials Inc
The present disclosure provides an apparatus configured for sputter deposition on a substrate. The apparatus includes a cylindrical sputter cathode rotatable around a rotational axis, and a magnet assembly configured to provide a first plasma racetrack and a second plasma racetrack on opposite sides of the cylindrical sputter cathode, wherein the magnet assembly includes two, three or four magnets each having two poles and one or more sub-magnets, wherein the two, three or four magnets are configured for generating both the first plasma racetrack and the second plasma racetrack.. ... Applied Materials Inc
Alternating between deposition and treatment of diamond-like carbon
A method of forming a layer of diamond-like carbon on a workpiece includes supporting the workpiece in a chamber with the workpiece facing an upper electrode, and forming a plurality of successive sublayers to form the layer of layer of diamond-like carbon by alternating between depositing a sublayer of diamond-like carbon on the workpiece in the chamber and treating the sublayer with a plasma of the inert gas or an electron beam from the upper electrode.. . ... Applied Materials Inc
Apparatus and methods for photo-excitation processes
Embodiments of the disclosure provide a method and apparatus for depositing a layer on a substrate. In one embodiment, the method includes exposing a surface of the substrate disposed within a processing chamber to a fluid precursor, directing an electromagnetic radiation generated from a radiation source to a light scanning unit such that the electromagnetic radiation is deflected and scanned across the surface of the substrate upon which a material layer is to be formed, and initiating a deposition process with the electromagnetic radiation having a wavelength selected for photolytic dissociation of the fluid precursor to deposit the material layer onto the surface of the substrate. ... Applied Materials Inc
Process kit for a high throughput processing chamber
A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a c-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. ... Applied Materials Inc
Deposition or treatment of diamond-like carbon in a plasma reactor
A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first rf power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the rf power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.. ... Applied Materials Inc
Methods and supports for holding subtrates
A method and a support for holding a substrate, wherein the support is included in a transportation system configured to transport the substrate. The method includes attaching an adhesive to the support, wherein the material of the adhesive is a synthetic setae material and wherein the adhesive is configured to attach the substrate to the support; and attaching the adhesive to the substrate. ... Applied Materials Inc
Batch processing load lock chamber
Embodiments of the disclosure generally relate to an improved batch processing load lock chamber, a cluster tool having the same and a method of using the improved load lock chamber to clean a plurality of substrates disposed within. In one embodiment, a load lock chamber includes a chamber body, a cassette disposed in the chamber body, a remote plasma source, a plurality of inlet nozzles and a plurality of outlet ports. ... Applied Materials Inc
Electronic device manufacturing systems, methods, and apparatus for heating substrates and reducing contamination in loadlocks
An electronic device manufacturing system may include a loadlock. The loadlock may include a plurality of gas line heaters for providing a heated gas to the loadlock to heat a processed substrate therein. ... Applied Materials Inc
Electrostatic chuck having thermally isolated zones with minimal crosstalk
A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. Trenches are formed in the thermally conductive base approximately concentric around a center of the thermally conductive base. ... Applied Materials Inc
Load port operation in electronic device manufacturing apparatus, systems, and methods
An electronic device manufacturing system may include a factory interface having a controlled environment. The electronic device manufacturing system may also include a load port coupled to the factory interface. ... Applied Materials Inc
Non-contact temperature calibration tool for a substrate support and method of using the same
Embodiments of the disclosure relate to methods for measuring temperature and a tool for calibrating temperature control of a substrate support in a processing chamber without contact with a surface of the substrate support. In one embodiment, a test fixture with a temperature sensor is removably mounted to an upper surface of a chamber body of the processing chamber such that the temperature sensor has a field of view including an area of the substrate support that is adjacent to a resistive coil disposed in the substrate support. ... Applied Materials Inc
Finned rotor cover
Embodiments described herein generally relate to a processing apparatus having a cover piece that participates in preheating a process gas. In one implementation, the cover piece includes an annulus. ... Applied Materials Inc
Aluminum content control of tiain films
Described are methods of depositing a titanium aluminum nitride film on a substrate surface with a controlled amount of carbon. The methods include exposing a substrate surface to a titanium precursor, a nitrogen reactant and an aluminum precursor with purges of the unreacted titanium and aluminum precursors and unreacted nitrogen reactants between each exposure.. ... Applied Materials Inc
Chemistry compatible coating material for advanced device on-wafer particle performance
A chamber component comprises a body and a plasma sprayed ceramic coating on the body. The plasma sprayed ceramic coating is applied using a method that includes feeding powder comprising a yttrium oxide containing solid solution into a plasma spraying system, wherein the powder comprises a majority of donut-shaped particles, each of the donut-shaped particles having a spherical body with indentations on opposite sides of the spherical body. ... Applied Materials Inc
Multi-zone gas injection assembly with azimuthal and radial distribution control
A gas injection system includes (a) a side gas plenum, (b) a plurality of n gas inlets coupled to said side gas plenum, (c) plural side gas outlets extending radially inwardly from said plenum, (d) an n-way gas flow ratio controller having n outputs coupled to said n gas inlets respectively, and (e) an m-way gas flow ratio controller having m outputs, respective ones of said m outputs coupled to said tunable gas nozzle and a gas input of said n-way gas flow ratio controller.. . ... Applied Materials Inc
Technique for measuring overlay between layers of a multilayer structure
A method for determining overlay between layers of a multilayer structure may include obtaining a given image representing the multilayer structure, obtaining expected images for layers of the multilayer structure, providing a combined expected image of the multilayer structure as a combination of the expected images of said layers, performing registration of the given image against the combined expected image, and providing segmentation of the given image, thereby producing a segmented image, and maps of the layers of said multilayered structure. The method may further include determining overlay between any two selected layers of the multilayer structure by processing the maps of the two selected layers together with the expected images of said two selected layers.. ... Applied Materials Inc
Method of performing metrology operations and system thereof
There are provided system and method of performing metrology operations related to a specimen. The method comprises: generating an examination recipe in accordance with a metrology application, the examination recipe specifying one or more metrology objects and one or more metrology operations related to the metrology application; obtaining an image-based representation of the specimen and a design-based representation of the specimen; mapping between the design-based representation of at least first metrology object and the image-based representation of at least first metrology object; and performing at least first metrology operation of the one or more metrology operations according to the examination recipe using the mapping, the at least first metrology operation specified as related to the at least first metrology object and to be performed on at least the image-based representation of the specimen.. ... Applied Materials Inc
Method of performing metrology operations and system thereof
There are provided system and method of performing metrology operations related to a specimen. The method comprises: accommodating definitions of metrology objects and metrology operations, at least one of the group consisting of the metrology objects and the metrology operations being defined using design data; accommodating a design-based representation and an image-based representation of the specimen, the design-based representation of the specimen comprising design-based representation of at least first metrology object, the image-based representation of the specimen comprising image-based representation of the at least first metrology object, the metrology operations including at least first metrology operation defined as related to the at least first metrology object and performed on at least the image-based representation of the specimen; mapping between the design-based representation and the image-based representation of the at least first metrology object; and performing the at least first metrology operation according to definition thereof using the mapping.. ... Applied Materials Inc
Plasma resistant coating of porous body by atomic layer deposition
Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ald) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. ... Applied Materials Inc
Plasma resistant coating of porous body by atomic layer deposition
Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a porous chamber component and onto pore walls within the porous chamber component using an atomic layer deposition (ald) process. The porous chamber component may include a porous body comprising a plurality of pores within the porous body, the plurality of pores each comprising pore walls. ... Applied Materials Inc
Apparatus and method for loading a substrate into a vacuum processing module, apparatus and method for treatment of a substrate for a vacuum deposition process in a vacuum processing module, and system for vacuum processing of a substrate
The present disclosure provides an apparatus for loading a substrate into a vacuum processing module. The apparatus includes a bernoulli-type holder having a surface configured to face the substrate, and a gas supply configured to direct a stream of gas between the surface and the substrate, wherein the bernoulli-type holder is configured to provide a pressure between the substrate and the surface configured for levitation of the substrate. ... Applied Materials Inc
Lamp configuration for additive manufacturing
An additive manufacturing system includes a platform to support an object to be fabricated, a dispenser to deliver a plurality of layers of a feed material over the platform, a controller configured to store digital data representing a pre-defined pattern, a laser configured to generate a laser beam to impinge an outermost layer of the feed material and coupled to the controller to fuse the feed material in the pre-defined pattern, and a plurality of independently controllable infrared lamps, each infrared lamp directed to a different section of an outermost layer of the feed material.. . ... Applied Materials Inc
In-situ temperature measurement for inside of process chamber
Apparatuses and methods for in-situ temperature measurement of a process chamber are described herein. A process chamber includes an infrared (ir) sensor mounted to the chamber wall. ... Applied Materials Inc
Ambient controlled transfer module and process system
Methods and apparatus for processing a substrate are provided herein. In one implementation, the apparatus includes a load lock chamber coupled to a transfer chamber. ... Applied Materials Inc
Rotor cover
Implementations described herein generally relate to a processing apparatus having a rotor cover for preheating the process gas. The apparatus includes a chamber body having a side wall and a bottom wall defining an interior processing region. ... Applied Materials Inc
Apparatus and method to reduce particle formation on substrates in post selective etch process
The present disclosure generally relates to apparatuses and methods for reducing particle contamination on substrate surfaces. In one example, the apparatus is embodied as a load lock chamber including a top heater liner disposed over and coupled to a heater pedestal. ... Applied Materials Inc
Charge-trap layer separation and word-line isolation in a 3-d nand structure
In a 3d nand device, the charge trap region of a memory cell is formed as a separate charge-trap “island.” as a result, the charge-trap region of one memory cell is electrically isolated from charge-trap regions in adjacent memory cells. The charge trap region of one memory cell is separated from the charge trap regions of adjacent memory cells by a dielectric structure, such as a silicon oxide film. ... Applied Materials Inc
Surface-selective atomic layer deposition using hydrosilylation passivation
Methods for selectively depositing films by atomic layer deposition are disclosed. Substrate surfaces are passivated by hydrosilylation to prevent deposition and allow selective deposition on unpassivated surfaces.. ... Applied Materials Inc
Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
Methods and apparatus for boosting ion energies are contemplated herein. In one embodiment, the methods and apparatus comprises a controller, a process chamber with a symmetrical plasma source configured to process a wafer, one or more very high frequency (vhf) sources, coupled to the process chamber, to generate plasma density and two or more frequency generators that generate low frequencies relative to the one or more vhf sources, coupled to a bottom electrode of the process chamber, the two or more low frequency generators configured to dissipate energy in the plasma sheath, wherein the controller controls the one or more vhf sources to generate a vhf signal and the two or more low frequency sources to generate two or more low frequency signals.. ... Applied Materials Inc
Sintered ceramic protective layer formed by hot pressing
Disclosed herein are methods for fabricating layered ceramic materials via hot pressing. A method includes disposing a powder compact or a ceramic slurry onto a surface of an article, wherein the article is a chamber component of a processing chamber. ... Applied Materials Inc
Spiral and concentric movement designed for cmp location specific polish (lsp)
A method is provided to minimize travel distance and time between correction locations on a substrate when polishing a local area of a substrate, such as a semiconductor wafer, using a location specific polishing module. A correction profile is determined and a recipe based on the correction profile is used to polish a substrate. ... Applied Materials Inc
Apparatus for increasing flux from an ampoule
Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. ... Applied Materials Inc
Cobalt manganese vapor phase deposition
Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising comn(n) and, optionally, an adhesion layer.. ... Applied Materials Inc
Critical dimension control for self-aligned contact patterning
Processing methods to create self-aligned contacts are described. A conformal liner can be deposited in a feature in a substrate surface leaving a gap between the walls of the liner. ... Applied Materials Inc
Selective etch rate monitor
Embodiments include a real time etch rate sensor and methods of for using a real time etch rate sensor. In an embodiment, the real time etch rate sensor includes a resonant system and a conductive housing. ... Applied Materials Inc
Enhanced spatial ald of metals through controlled precursor mixing
Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. ... Applied Materials Inc
Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. ... Applied Materials Inc
Methods and apparatus for multi-cathode substrate processing
Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. ... Applied Materials Inc
Systems and methods for internal surface conditioning assessment in plasma processing equipment
In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. ... Applied Materials Inc
Multi-layer plasma resistant coating by atomic layer deposition
Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ald) process. The plasma resistant coating has a stress relief layer and a rare earth metal-containing oxide layer and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.. ... Applied Materials Inc
Apparatus to improve substrate temperature uniformity
Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.. ... Applied Materials Inc
Gas distribution apparatus for processing chambers
Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. ... Applied Materials Inc
Slurry and slurry delivery technique for chemical mechanical polishing of copper
A method of polishing includes bringing a metal layer of a substrate into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, and while the metal layer is in contact with the polishing pad and the substrate is moving relative to the polishing pad, alternating between supplying a first polishing liquid and a second polishing liquid to an interface between the metal layer. The first polishing liquid is abrasive-free and includes an oxidizer, and the second polishing liquid includes abrasive particles and a complexing compound to complex with ions of the metal of the metal layer.. ... Applied Materials Inc
Printing chemical mechanical polishing pad having window or controlled porosity
A method of fabricating a polishing pad includes determining a desired distribution of voids to be introduced within a polymer matrix of a polishing layer of the polishing pad. Electronic control signals configured to be read by a 3d printer are generated which specify the locations where a polymer matrix precursor is to be deposited, and specify the locations of the desired distribution of voids where no material is to be deposited. ... Applied Materials Inc
Substrate position calibration for substrate supports in substrate processing systems
Methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein. In some embodiments, a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.. ... Applied Materials Inc
Self-aligned nanodots for 3d nand flash memory
A method of forming a 3d nand structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming sige nanodots on the nitride layers. A method of forming a 3d nand structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming sige nanodots on the nitride layers by a process including maintaining a temperature of the substrate below about 560° c.; flowing a silicon epitaxy precursor into the chamber; forming a silicon epitaxial layer on the substrate at the nitride layers; flowing germanium gas into the chamber with the silicon epitaxy precursor; and forming a silicon germanium epitaxial layer on the substrate at the nitride layers.. ... Applied Materials Inc
High deposition rate and high quality nitride
In one implementation, a method comprising depositing one or more silicon oxide/silicon nitride containing stacks on a substrate positioned in a processing chamber is provided. Depositing the one or more silicon oxide/silicon nitride containing stacks comprises (a) energizing a first process gas into a first plasma, (b) depositing a first film layer over the substrate from the first plasma, (c) energizing a second process gas into a second plasma, wherein the second process gas comprises a compound having at least one silicon-nitrogen bond and (d) depositing a second film layer on the first film layer from the second plasma. ... Applied Materials Inc
Adjustable extended electrode for edge uniformity control
Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. ... Applied Materials Inc
Apparatus with concentric pumping for multiple pressure regimes
An exhaust module for a substrate processing apparatus having a body, a pumping ring, and a symmetric flow valve, is disclosed herein. The body has a first and second vacuum pump opening formed therethrough. ... Applied Materials Inc
Apparatus configured for enhanced vacuum ultraviolet (vuv) spectral radiant flux and system having the apparatus
A charge control apparatus for controlling charge on a substrate in a vacuum chamber is described. The apparatus includes a light source emitting a beam of radiation having a divergence; a mirror configured to reflect the beam of radiation, wherein a curvature of a mirror surface of the curved mirror is configured to reduce the divergence of the beam of radiation; and a mirror support configured to rotatably support the curved mirror, wherein a rotation of the mirror varies the direction of the beam of radiation.. ... Applied Materials Inc
Voltage-current probe for measuring radio-frequency electrical power in a high-temperature environment and method of calibrating the same
A voltage-current sensor enables more accurate measurement of the voltage, current, and phase of rf power that is delivered to high-temperature processing region. The sensor includes a planar body comprised of a non-organic, electrically insulative material, a measurement opening formed in the planar body, a voltage pickup disposed around the measurement opening, and a current pickup disposed around the measurement opening. ... Applied Materials Inc
Method and apparatus for low temperature selective epitaxy in a deep trench
The present disclosure generally relate to a cluster tool and methods for forming an epitaxial layer on a semiconductor device. In one implementation, the cluster tool includes a transfer chamber, a pre-clean chamber coupled to the transfer chamber, a plasma-cleaning chamber coupled to the transfer chamber, a deposition chamber coupled to the transfer chamber, an etch chamber coupled to the transfer chamber, and a thermal process chamber coupled to the transfer chamber.. ... Applied Materials Inc
Aluminum plating at low temperature with high efficiency
The present disclosure generally relates to methods of electro-depositing a crystalline layer of pure aluminum onto the surface of an aluminum alloy article. The methods may include positioning the article and an electrode in an electro-deposition solution. ... Applied Materials Inc
Method and apparatus of remote plasmas flowable cvd chamber
Embodiments disclosed herein generally relate to a plasma processing system. The plasma processing system includes a processing chamber, a chamber seasoning system, and a remote plasma cleaning system. ... Applied Materials Inc
Plasma erosion resistant thin film coating for high temperature application
An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. ... Applied Materials Inc
Accommodating imperfectly aligned memory holes
Methods of forming 3-d flash memory cells are described. The methods allow the cells to be produced despite a misalignment in at least two sections (top and bottom), each having multiple charge storage locations. ... Applied Materials Inc
Accommodating imperfectly aligned memory holes
Methods of forming 3-d flash memory cells are described. The methods allow the cells to be produced despite a misalignment in at least two sections (top and bottom), each having multiple charge storage locations. ... Applied Materials Inc
Method of pattern placement correction
In one embodiment of the invention, a method for correcting a pattern placement on a substrate is disclosed. The method begins by detecting three reference points for a substrate. ... Applied Materials Inc
Hybrid wafer dicing approach using a split beam laser scribing process and plasma etch process
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. ... Applied Materials Inc
Method for pecvd overlay improvement
The present disclosure generally relates to a method for performing semiconductor device fabrication, and more particularly, to improvements in lithographic overlay techniques. The method for improved overlay includes depositing a material on a substrate, heating a substrate in a chamber using thermal energy, measuring a local stress pattern of each substrate, wherein measuring the local stress pattern measures an amount of change in a depth of the deposited material on the substrate, plotting a plurality of points on a k map to determine a local stress pattern of the substrate, adjusting the thermal energy applied to the points on the k map, determining a sensitivity value for each of the points on the k map, and applying a correction factor to the applied thermal energy to adjust the local stress pattern.. ... Applied Materials Inc
Systems, apparatus, and methods for a load port door opener
Embodiments provide systems, apparatus, and methods for an improved load port operable to purge air trapped between the substrate carrier door and the carrier door opener. Embodiments include a docking tray adapted to receive a substrate carrier including a carrier door; a door opener adjacent the docking tray and adapted to couple to the carrier door and to open the carrier door, wherein the door opener includes a purge gas inlet port; at least one exhaust outlet port, and a ridge wall defining a perimeter channel in cooperation with a docked substrate carrier, wherein the ridge wall includes openings proximate the ports and wherein the door opener further includes a diverter structure disposed to direct purge gas from the inlet port to at least one of the openings in the ridge wall. ... Applied Materials Inc
Non-contact substrate temperature measurement technique based on spectral inteferometry
In some embodiments, an apparatus for processing substrates includes: a substrate support within a processing chamber; a light source directly coupled to a light isolator and configured to deliver incident light to and through a first surface of the substrate when disposed on the substrate support; an optical fiber having a first end spaced apart a first distance from the first surface and a second end directly coupled to the light source via a coupling element; a photodetector directly coupled to the second end of the optical fiber via the coupling element and configured to receive a first reflected light beam reflected off the first surface and a second reflected light beam reflected off an inner boundary of a second surface of the substrate, opposite the first surface; and a signal processor to determine a temperature of the substrate based on the first and second reflected light beams.. . ... Applied Materials Inc
Self-limiting atomic thermal etching systems and methods
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. ... Applied Materials Inc
Shaped etch profile with oxidation
Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. ... Applied Materials Inc
Plasma abatement technology utilizing water vapor and oxygen reagent
Implementations of the present disclosure relate to systems and techniques for abating f-gases present in the effluent of semiconductor manufacturing processes. In one implementation, a water and oxygen delivery system for a plasma abatement system is provided. ... Applied Materials Inc
Systems and methods for radial and azimuthal control of plasma uniformity
A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. ... Applied Materials Inc
System for tunable workpiece biasing in a plasma reactor
Systems and methods for tunable workpiece biasing in a plasma reactor are provided herein. In some embodiments, a system includes: a plasma chamber that performs plasma processing on a workpiece, a first pulsed voltage source, coupled directly to a workpiece, a second pulsed voltage source, coupled capacitively to the workpiece, and a biasing controller comprising one or more processors, and memory, wherein the memory comprises a set of computer instructions that when executed by the one or more processors, independently controls the first pulsed voltage source and the second pulsed voltage source based on one or more parameters of the first pulsed voltage source and the second pulsed voltage source in order to tailor ion energy distribution of the flux of ions directed to the workpiece.. ... Applied Materials Inc
Chamber with flow-through source
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. ... Applied Materials Inc
Post exposure processing apparatus
Implementations described herein relate to apparatus for post exposure processing. More specifically, implementations described herein relate to field-guided post exposure process chambers and cool down/development chambers used on process platforms. ... Applied Materials Inc
Coating tester using gas sensors
Embodiments of the disclosure generally relate to a system, apparatus and method for testing a coating over a semiconductor chamber component. In one embodiment, a test station comprises a hollow tube, a sensor coupled to a top end of the tube and a processing system communicatively coupled to the sensor. ... Applied Materials Inc
Half-angle nozzle
Implementations of the present disclosure provide an apparatus for improving gas distribution during thermal processing. One implementation of the present disclosure provides an apparatus for thermal processing a substrate. ... Applied Materials Inc
Paste method to reduce defects in dielectric sputtering
Embodiments of a tantalum (ta) target pasting process for deposition chambers using rf powered processes include pasting at least a portion of the inner surfaces of the process chamber with ta after using rf sputtering to deposit dielectric material on a wafer. Pressure levels within the process chamber are adjusted to maximize coverage of the ta pasting layer. ... Applied Materials Inc
Additive manufacturing system having blade and dispenser on common support
An additive manufacturing system includes a platen, a dispenser apparatus positioned above the platen to dispense a layer of powder over the platen, and an energy source to selectively fuse the layer of powder. The dispenser apparatus includes a support structure, a dispenser secured to the support structure and including a reservoir to hold the powder and one or more openings configured to deliver powder from the reservoir in a linear region that extends along a first axis, a spreader extending along the first axis and secured to the support structure and positioned to spread powder already delivered on the platen by the dispenser, and a drive system to move the support structure along a second axis perpendicular to the first axis such that the dispenser and blade move together to sweep the linear region along the second axis to deposit and level the powder.. ... Applied Materials Inc
Additive manufacturing system having laser and dispenser on common support
An additive manufacturing system includes a platen to support an object being manufactured, a dispenser to deliver a plurality of successive layers of a powder over the platen, and energy source configured to fuse at least a portion of the powder. The dispenser is configured to deliver the powder in a linear region that extends along a first axis. ... Applied Materials Inc
Additive manufacturing with gas delivery and dispenser on common support
An additive manufacturing system includes a platen having a top surface, a support structure, a powder dispenser coupled to the support structure and positioned above the platen and configured to deliver a powder in a linear region that extends along a first axis, a gas dispenser coupled to the support structure in a fixed position relative to the powder dispenser and having an outlet to deliver a gas across the outermost layer of feed material, an energy source configured to selectively fused the layer of powder, and an actuator coupled to the support to move the support with the powder dispenser and the gas dispenser together along a second axis perpendicular to the first axis and parallel to the top surface such that the linear region and the outlet sweep along the second axis to deposit the powder in a swath over the platen and deliver the gas.. . ... Applied Materials Inc
Linear powder dispenser that raster scans for additive manufacturing
An additive manufacturing system includes a platen, a dispenser configured to deliver a powder in a linear region that extends across less than all of a width of the platen, a drive system configured to move the dispenser along the first axis and a perpendicular second axis, a controller, and an energy source configured to selectively fuse a layer of powder. The controller is configured to cause the drive system to move the dispenser along the second axis a first time such that the linear region makes a first sweep along the second axis to deposit the powder in a first swath over the platen, thereafter along the first axis, and thereafter along the second axis a second time such that the first linear region makes a second sweep along the second axis to deposit the powder in a parallel second swath over the platen.. ... Applied Materials Inc
Multiple sequential linear powder dispensers for additive manufacturing
An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. ... Applied Materials Inc
Plasma abatement of nitrous oxide from semiconductor process effluents
Embodiments of the present disclosure generally relate techniques for abating n2o gas present in the effluent of semiconductor manufacturing processes. In one embodiment, a method includes injecting hydrogen gas or ammonia gas into a plasma source, and an effluent containing n2o gas and the hydrogen or ammonia gas are energized and reacted to form an abated material. ... Applied Materials Inc
Techniques for filling a structure using selectrive surface modification
A method of device processing. The method may include providing a cavity in a layer, directing energetic flux to a bottom surface of the cavity, performing an exposure of the cavity to a moisture-containing ambient, and introducing a fill material in the cavity using an atomic layer deposition (ald) process, wherein the fill material is selectively deposited on the bottom surface of the cavity with respect to a sidewall of the cavity.. ... Applied Materials Inc
Adjustable extended electrode for edge uniformity control
Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. ... Applied Materials Inc
Methods and apparatus for correcting substrate deformity
Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. ... Applied Materials Inc
Schemes for selective deposition for patterning applications
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include depositing a second metal on a first metal without protecting the dielectric, protecting the metal with a cross-linked self-assembled monolayer and depositing a second dielectric on the first dielectric while the metal is protected.. ... Applied Materials Inc
Modifying work function of a metal film with a plasma process
A sequential plasma process is employed to enable the modification of the work function of a p-type metal layer in a metal gate structure. The sequential plasma process includes a plasma hydrogenation and a plasma process that includes electronegative species. ... Applied Materials Inc
Applying equalized plasma coupling design for mura free susceptor
A method and apparatus for equalized plasma coupling is provided herein. Discontinuity marks, also known as golf tee mura, are eliminated or minimized by biasing or grounding lift pins disposed in openings towards the center of a substrate support. ... Applied Materials Inc
Boron doped tungsten carbide for hardmask applications
Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of hardmask films on a substrate. ... Applied Materials Inc
Biasable flux optimizer / collimator for pvd sputter chamber
In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. ... Applied Materials Inc
Inductively coupled plasma source with symmetrical rf feed and reactance elements
A plasma reactor includes a window assembly, inner, middle and outer coil antennas adjacent the window assembly, inner, middle and outer current distributors respectively coupled to the inner, middle and outer coil antennas, a ceiling plate overlying the window assembly, first, second and third rf power terminals, and first, second and third axial rf power feeds connected between respective ones of the first, second and third rf power terminals and respective ones of the inner, middle and outer current distributors. The third axial rf power feed includes an outer rf power distribution cylinder surrounding the first and second rf axial power feeds. ... Applied Materials Inc
Methods and apparatuses for utilizing adaptive predictive algorithms and determining when to use the adaptive predictive algorithms for virtual metrology
Described herein are methods, apparatuses, and systems for determining adaptive predictive algorithms for virtual metrology. In some embodiments, a computer implemented method identifies a plurality of predictive algorithms. ... Applied Materials Inc
Apparatus for post exposure bake
Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. ... Applied Materials Inc
Method to reduce line waviness
Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. ... Applied Materials Inc
Exfoliation process for removal of deposited materials from masks carriers, and deposition tool components
A method for exfoliation of deposited material off a work piece may comprise: immersing the work piece in an ultrasonic bath and applying ultrasonic energy, wherein the ultrasonic bath contains a fluid either held at a constant temperature within the range from greater than room temperature to less than the fluid boiling point, or the fluid is cycled over a Δt chosen within the range between room temperature and less than the fluid boiling point, wherein the temperature is chosen to provide a significant cte mismatch between the layer and the work piece in order to promote exfoliation of the layer off the work piece, and wherein process time in the ultrasonic bath is within a range from several seconds up to 120 minutes for loosening the layer; cleaning the work piece by rinsing with liquids; and drying the work piece. A system is described for running the exfoliation process.. ... Applied Materials Inc
Electrostatic chuck with radio frequency isolated heaters
A heater assembly for a substrate support assembly includes a flexible body. The heater assembly further includes one or more resistive heating elements disposed in the flexible body. ... Applied Materials Inc
Aligner structure and alignment method
An aligner structure comprises: a first alignment unit for sequentially and firstly aligning the substrate and the mask by the first relative displacement between the substrate and the mask; and a second alignment unit for sequentially and secondarily aligning the substrate and the mask by the second relative displacement between the substrate and the mask after the first alignment by the first alignment unit. The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate and the mask can be quickly and precisely aligned by performing the first relative displacement between the substrate and the mask with a relatively small displacement scale after finishing the first relative displacement between the substrate and the mask with a relatively large displacement scale.. ... Applied Materials Inc
Self-aligned epi contact flow
Methods for forming semiconductor devices, such as finfets, are provided. In one embodiment, a method for forming a finfet device includes removing a portion of each fin of a plurality of fins, and a remaining portion of each fin is recessed from a dielectric surface. ... Applied Materials Inc
Enhanced cobalt agglomeration resistance and gap-fill performance by ruthenium doping
In one implementation, a method of forming a cobalt layer on a substrate is provided. The method comprises forming a barrier and/or liner layer on a substrate having a feature definition formed in a first surface of the substrate, wherein the barrier and/or liner layer is formed on a sidewall and bottom surface of the feature definition. ... Applied Materials Inc
Sol gel coated support ring
A support member for a thermal processing chamber is described. The support member has a sol coating on at least one surface. ... Applied Materials Inc
Apparatus and methods for wafer chucking on a susceptor for ald
Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.. ... Applied Materials Inc
Template formation for fully relaxed sige growth
The present disclosure generally relates to a device having a thin, low-defect, fully-relaxed silicon germanium (sige) layer, and methods of manufacture thereof. The methods generally include depositing a silicon oxide layer on a silicon layer, patterning the silicon oxide layer, exposing the silicon oxide layer to an etchant to form one or more recesses in the silicon layer and one or more faceted silicon oxide caps, and epitaxially growing a silicon germanium layer in the one or more recesses and over an apex of the one or more faceted silicon oxide caps. ... Applied Materials Inc
Method and apparatus for selective deposition of dielectric films
Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. ... Applied Materials Inc
Physical vapor deposition processing systems target cooling
Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and an outlet end.. ... Applied Materials Inc
Apparatus for vacuum sputter deposition and method therefor
A apparatus for vacuum sputter deposition is described. The apparatus includes, a vacuum chamber; three or more sputter cathodes within the vacuum chamber for sputtering material on a substrate; a gas distribution system for providing a processing gas including h2 to the vacuum chamber; a vacuum system for providing a vacuum inside the vacuum chamber; and a safety arrangement for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement comprises a dilution gas feeding unit connected to the vacuum system for dilution of the h2-content of the processing gas.. ... Applied Materials Inc
Method and apparatus for semiconductor processing chamber isolation for reduced particles and improved uniformity
Implementations of the present disclosure generally relate to apparatus and methods for uniform deposition of thin films on substrates. In one implementation, a plasma-processing chamber comprises a chamber body including chamber walls, a chamber floor, and a lid support. ... Applied Materials Inc
Plasma source with symmetrical rf feed
A plasma reactor includes inner, middle and outer current distributors to carry rf power to be supplied to a plasma in the processing region, and a plurality of rf power feeds connected between a plurality of rf power terminals and the inner, middle and outer current distributors. The current distributors are successive concentric axially symmetric hollow bodies. ... Applied Materials Inc
Trend dynamic sensor imaging using contour maps to visualize multiple trend data sets in a single view
A method and system for trend dynamic sensor imaging is described herein. The method includes receiving, from a plurality of sensors, a plurality of data sets, and comparing the plurality of data sets to reference data to generate, for each of the plurality of sensors, one or more corresponding comparison values. ... Applied Materials Inc
Resolution enhanced digital lithography with anti-blazed dmd
Embodiments of the present disclosure generally relate to methods and apparatus for processing one or more substrates, and more specifically to improved spatial light modulators for digital lithography systems and digital lithography methods using improved spatial light modulators. The spatial light modulator is configured such that there is a 180-degree phase shift between adjacent spatial light modulator pixels. ... Applied Materials Inc
Asymmetrical magnification inspection system and illumination module
An illumination module that includes a pair of anamorphic prisms that comprises a first anamorphic prism and a second anamorphic prism; wherein the pair of anamorphic prisms is configured to (a) receive a first radiation beam that propagates along a first optical axis, and (b) asymmetrically magnify the first radiation beam to provide a second radiation beam that propagates along a second optical axis that is parallel to the first optical axis; and a rectangular prism that is configured to receive the second radiation beam and perform a lateral shift of the second radiation beam to provide a third radiation beam; and a rotating mechanism that is configured to change an asymmetrical magnification of the pair of anamorphic prisms by rotating at least one of the first anamorphic prism and the second anamorphic prism.. . ... Applied Materials Inc
Epitaxial chamber with customizable flow injection
Apparatus for processing a substrate in a process chamber are provided here. In some embodiments, a gas injector for use in a process chamber includes a first set of outlet ports that provide an angled injection of a first process gas at an angle to a planar surface, and a second set of outlet ports proximate the first set of outlet ports that provide a pressurized laminar flow of a second process gas substantially along the planar surface, the planar surface extending normal to the second set of outlet ports.. ... Applied Materials Inc
Multi-layer plasma resistant coating by atomic layer deposition
Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ald) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of y2o3—zro2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.. ... Applied Materials Inc
Method to improve film quality for pvd carbon with reactive gas and bias power
Embodiments of the present disclosure generally describe methods for depositing an amorphous carbon layer onto a substrate, including over previously formed layers on the substrate, using a high power impulse magnetron sputtering (hipims) process, and in particular, biasing of the substrate during the deposition process and flowing a nitrogen source gas and/or a hydrogen source gas into the processing chamber in addition to an inert gas to improve the morphology and film stress of the deposited amorphous carbon layer.. . ... Applied Materials Inc
Extension of pvd chamber with multiple reaction gases, high bias power, and high power impulse source for deposition, implantation, and treatment
Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an rf and a dc power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 hz to about 20 khz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.. ... Applied Materials Inc
Low temperature fluoride glasses and glazes
An article comprises a body having a coating. The coating comprising a eutectic system having a super-lattice of a first fluoride and a second fluoride. ... Applied Materials Inc
Thin plastic polishing article for cmp applications
A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. ... Applied Materials Inc
Plasma parameters and skew characterization by high speed imaging
Embodiments of the present disclosure relate to a method and an apparatus for monitoring plasma behavior inside a plasma processing chamber. In one example, a method for monitoring plasma behavior includes acquiring at least one image of a plasma, and determining a plasma parameter based on the at least one image.. ... Applied Materials Inc
Substrate support assembly having surface features to improve thermal performance
A substrate support assembly including a ceramic body includes an upper surface. The upper surface includes a sealing ring at a periphery of the ceramic body, a plurality of mesas and a plurality of recessed features, wherein the plurality of recessed features are formed between the plurality of mesas. ... Applied Materials Inc
Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use
Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising mn(n) and, optionally, an adhesion layer.. ... Applied Materials Inc
Adapter for replaceable lamp
Embodiments of the present disclosure generally relate to an improved adapter for simplified lamps for use as a source of heat radiation in a rapid thermal processing (rtp) chamber. In one embodiment, a lamp assembly is provided. ... Applied Materials Inc
Resistivity-based calibration of in-situ electromagnetic inductive monitoring
A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. ... Applied Materials Inc
Selective deposition of thin film dielectrics using surface blocking chemistry
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.. ... Applied Materials Inc
Solid state battery fabrication
Embodiments of the invention generally relate to solid state battery structures, such as li-ion batteries, methods of fabrication and tools for fabricating the batteries. One or more electrodes and the separator may each be cast using a green tape approach wherein a mixture of active material, conductive additive, polymer binder and/or solid electrolyte are molded or extruded in a roll to roll or segmented sheet/disk process to make green tape, green disks or green sheets. ... Applied Materials Inc
Encapsulating film stacks for oled applications with desired profile control
Embodiments described herein generally relate to a method and apparatus for encapsulating an oled structure, more particularly, to a tfe structure for an oled structure with desired profile control of the tfe structure. In one example, a method for forming a thin film encapsulation structure over an oled structure includes forming a thin film encapsulation structure over an oled structure disposed on a substrate, and performing a plasma treatment process to the thin film encapsulation structure by supplying a treatment gas mixture including a halogen containing gas to the thin film encapsulation structure.. ... Applied Materials Inc
Dual pvd chamber and hybrid pvd-cvd chambers
Processing platforms comprising a central transfer station having at least one robot and a dual chamber processing chamber connected to a side of the central transfer station through a gate valve are described. The dual chamber processing chamber comprises a first processing volume and a second processing volume connected to a shared vacuum pump.. ... Applied Materials Inc
Electrostatic puck assembly with metal bonded backing plate for high temperature processes
An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises aln or al2o3 and has a first coefficient of thermal expansion. ... Applied Materials Inc
Method and apparatus for processing a substrate
Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.. ... Applied Materials Inc
Methods of etching films with reduced surface roughness
Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.. ... Applied Materials Inc
Ald process for nio film with tunable carbon content
Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.. . ... Applied Materials Inc
Water assisted highly pure ruthenium thin film deposition
Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.. . ... Applied Materials Inc
Cooling and utilization optimization of heat sensitive bonded metal targets
A sputtering source is described. The sputtering source includes a backing support having a target receiving surface and a further surface opposing the target receiving surface, and at least one magnet assembly provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess, wherein the recess is provided opposite to the magnet assembly.. ... Applied Materials Inc
Apparatus and methods for wafer rotation to improve spatial ald process uniformity
Apparatus and methods for rotating wafers during processing include a wafer rotation assembly with a support fixture connected to a shaft and a wafer transfer assembly with a robot blade with an opening therethrough, the opening sized to allow the support surface of the support fixture to pass through the opening. A first actuator is connected to the wafer rotation assembly to rotate the support fixture assembly about an axis of the shaft. ... Applied Materials Inc
Electrostatic chuck assembly for high temperature processes
An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. ... Applied Materials Inc
Apparatus for field guided acid profile control in a photoresist layer
Implementations described herein relate to apparatus and methods for processing a substrate. More specifically, a process chamber having movable electrodes for generating a parallel field within a process volume filled with a fluid is provided. ... Applied Materials Inc
Method and apparatus for selective epitaxy
A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees celsius.. . ... Applied Materials Inc
Showerhead having a detachable high resistivity gas distribution plate
Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.. ... Applied Materials Inc
Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide
A microwave antenna includes a first spiral conduit having a first conduit end, first plural ports in a floor of the first spiral conduit spaced apart along the length of the first spiral conduit; an axial conduit coupled to a rotatable stage; and a distributor waveguide comprising an input coupled to the axial conduit and a first output coupled to the first conduit end.. . ... Applied Materials Inc
Methods and apparatus for enhanced flow detection repeatability of thermal-based mass flow controllers (mfcs)
An electronic device manufacturing system includes a mass flow controller (mfc) that has a thermal flow sensor. The thermal flow sensor may measure a mass flow rate and may include a sensor tube having an inner surface coated with a material to form an inner barrier layer. ... Applied Materials Inc
Micro led array as illumination system
Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. ... Applied Materials Inc
Gas injection apparatus with heating channels
A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.. . ... Applied Materials Inc
Alcohol assisted ald film deposition
Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.. ... Applied Materials Inc
Measurement assembly for measuring a deposition rate and method therefore
A measurement assembly for measuring a deposition rate of an evaporated material is described. The measurement assembly includes an oscillation crystal for measuring the deposition rate, a measurement outlet for providing evaporated material to the oscillation crystal, and a magnetic closing mechanism configured for opening and closing the measurement outlet by magnetic force.. ... Applied Materials Inc
Retaining ring with shaped surface
A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. ... Applied Materials Inc
Systems, methods, and apparatus for transfer chamber gas purge of electronic device processing systems
Transfer chamber gas purge systems, apparatus, and methods are disclosed. Embodiments include a transfer chamber including a plurality of distributed purge gas inlets, each inlet including a diffusing member, each diffusing member including a diffusing element and a diffusing housing integrally formed as a single piece. ... Applied Materials Inc
Spray bar design for uniform liquid flow distribution on a substrate
A spray manifold for a brush box is disclosed which includes an elongated body having a plurality of holes formed in a line along a direction parallel to a longitudinal axis of the body, a linear slot formed along a length of the body aligning with the line of the holes, a central bore formed along the length of the body and between each of the holes and the slot, and a cover disposed on the slot.. . ... Applied Materials Inc
3d nand high aspect ratio structure etch
Embodiments of the present disclosure provide methods for forming features in a film stack. The film stack may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3d) stacking of semiconductor chips. ... Applied Materials Inc
Systems and methods for wetting substrates
Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. ... Applied Materials Inc
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