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Applied Materials Inc patents


Recent patent applications related to Applied Materials Inc. Applied Materials Inc is listed as an Agent/Assignee. Note: Applied Materials Inc may have other listings under different names/spellings. We're not affiliated with Applied Materials Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Applied Materials Inc-related inventors


 new patent  Selective deposition of thin film dielectrics using surface blocking chemistry

Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.. ... Applied Materials Inc

 new patent  Solid state battery fabrication

Embodiments of the invention generally relate to solid state battery structures, such as li-ion batteries, methods of fabrication and tools for fabricating the batteries. One or more electrodes and the separator may each be cast using a green tape approach wherein a mixture of active material, conductive additive, polymer binder and/or solid electrolyte are molded or extruded in a roll to roll or segmented sheet/disk process to make green tape, green disks or green sheets. ... Applied Materials Inc

 new patent  Encapsulating film stacks for oled applications with desired profile control

Embodiments described herein generally relate to a method and apparatus for encapsulating an oled structure, more particularly, to a tfe structure for an oled structure with desired profile control of the tfe structure. In one example, a method for forming a thin film encapsulation structure over an oled structure includes forming a thin film encapsulation structure over an oled structure disposed on a substrate, and performing a plasma treatment process to the thin film encapsulation structure by supplying a treatment gas mixture including a halogen containing gas to the thin film encapsulation structure.. ... Applied Materials Inc

 new patent  Dual pvd chamber and hybrid pvd-cvd chambers

Processing platforms comprising a central transfer station having at least one robot and a dual chamber processing chamber connected to a side of the central transfer station through a gate valve are described. The dual chamber processing chamber comprises a first processing volume and a second processing volume connected to a shared vacuum pump.. ... Applied Materials Inc

 new patent  Electrostatic puck assembly with metal bonded backing plate for high temperature processes

An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises aln or al2o3 and has a first coefficient of thermal expansion. ... Applied Materials Inc

 new patent  Method and apparatus for processing a substrate

Embodiments of a method and apparatus for annealing a substrate are disclosed herein. In some embodiments, a substrate support includes a substrate support pedestal having an upper surface to support a substrate and an opposing bottom surface, wherein the substrate support pedestal is formed of a material that is transparent to radiation; a lamp assembly disposed below the substrate support pedestal and having a plurality of lamps configured to heat the substrate; a pedestal support extending through the lamp assembly to support the substrate support pedestal in a spaced apart relation to the plurality of lamps; a shaft coupled to a second end of the pedestal support opposite the first end; and a rotation assembly coupled to the shaft opposite the pedestal support to rotate the shaft, the pedestal support, and the substrate support pedestal with respect to the lamp assembly.. ... Applied Materials Inc

 new patent  Methods of etching films with reduced surface roughness

Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.. ... Applied Materials Inc

 new patent  Ald process for nio film with tunable carbon content

Processing methods comprising exposing a substrate to a first reactive gas comprising a cyclopentadienyl nickel complex and a second reactive gas comprising a sub-saturative amount of oxygen to form a nickel oxide film with a carbon content in the range of about 2 to about 10 atomic percent are described.. . ... Applied Materials Inc

 new patent  Water assisted highly pure ruthenium thin film deposition

Processing methods comprising exposing a substrate to a first reactive gas comprising an ethylcyclopentadienyl ruthenium complex or a cyclohexadienyl ruthenium complex and a second reactive gas comprising water to form a ruthenium film are described.. . ... Applied Materials Inc

 new patent  Cooling and utilization optimization of heat sensitive bonded metal targets

A sputtering source is described. The sputtering source includes a backing support having a target receiving surface and a further surface opposing the target receiving surface, and at least one magnet assembly provided adjacent the further surface, wherein the target receiving surface of the backing support has at least one recess, wherein the recess is provided opposite to the magnet assembly.. ... Applied Materials Inc

Apparatus and methods for wafer rotation to improve spatial ald process uniformity

Apparatus and methods for rotating wafers during processing include a wafer rotation assembly with a support fixture connected to a shaft and a wafer transfer assembly with a robot blade with an opening therethrough, the opening sized to allow the support surface of the support fixture to pass through the opening. A first actuator is connected to the wafer rotation assembly to rotate the support fixture assembly about an axis of the shaft. ... Applied Materials Inc

Electrostatic chuck assembly for high temperature processes

An electrostatic chuck assembly includes a puck and a cooling plate. The puck includes an electrically insulative upper puck plate comprising one or more heating elements and one or more electrodes to electrostatically secure a substrate and further includes a lower puck plate bonded to the upper puck plate by a metal bond, the lower puck plate comprising a plurality of features distributed over a bottom side of the lower puck plate at a plurality of different distances from a center of the lower puck plate, wherein each of the plurality of features accommodates one of a plurality of fasteners. ... Applied Materials Inc

Apparatus for field guided acid profile control in a photoresist layer

Implementations described herein relate to apparatus and methods for processing a substrate. More specifically, a process chamber having movable electrodes for generating a parallel field within a process volume filled with a fluid is provided. ... Applied Materials Inc

Method and apparatus for selective epitaxy

A method of forming a film on a substrate having silicon surfaces and dielectric surfaces includes precleaning the substrate; applying an inhibitor species to the dielectric surfaces; and exposing the substrate to a precursor while maintaining a temperature of less than about 600 degrees celsius.. . ... Applied Materials Inc

07/05/18 / #20180190473

Showerhead having a detachable high resistivity gas distribution plate

Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.. ... Applied Materials Inc

07/05/18 / #20180190472

Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide

A microwave antenna includes a first spiral conduit having a first conduit end, first plural ports in a floor of the first spiral conduit spaced apart along the length of the first spiral conduit; an axial conduit coupled to a rotatable stage; and a distributor waveguide comprising an input coupled to the axial conduit and a first output coupled to the first conduit end.. . ... Applied Materials Inc

07/05/18 / #20180188748

Methods and apparatus for enhanced flow detection repeatability of thermal-based mass flow controllers (mfcs)

An electronic device manufacturing system includes a mass flow controller (mfc) that has a thermal flow sensor. The thermal flow sensor may measure a mass flow rate and may include a sensor tube having an inner surface coated with a material to form an inner barrier layer. ... Applied Materials Inc

07/05/18 / #20180188655

Micro led array as illumination system

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. ... Applied Materials Inc

07/05/18 / #20180187305

Gas injection apparatus with heating channels

A gas injection apparatus for a thermal processing chamber includes a gas injector having an inlet at a first end and a port at a second end; and a plate having a first opening matching the port, one or more second openings, and at least one circuitous flow path defined by the plate and fluidly connecting the first opening to the one or more second openings.. . ... Applied Materials Inc

07/05/18 / #20180187304

Alcohol assisted ald film deposition

Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.. ... Applied Materials Inc

07/05/18 / #20180187302

Measurement assembly for measuring a deposition rate and method therefore

A measurement assembly for measuring a deposition rate of an evaporated material is described. The measurement assembly includes an oscillation crystal for measuring the deposition rate, a measurement outlet for providing evaporated material to the oscillation crystal, and a magnetic closing mechanism configured for opening and closing the measurement outlet by magnetic force.. ... Applied Materials Inc

07/05/18 / #20180185979

Retaining ring with shaped surface

A retaining ring can be shaped by machining or lapping the bottom surface of the ring to form a shaped profile in the bottom surface. The bottom surface of the retaining ring can include flat, sloped and curved portions. ... Applied Materials Inc

07/05/18 / #20180185893

Systems, methods, and apparatus for transfer chamber gas purge of electronic device processing systems

Transfer chamber gas purge systems, apparatus, and methods are disclosed. Embodiments include a transfer chamber including a plurality of distributed purge gas inlets, each inlet including a diffusing member, each diffusing member including a diffusing element and a diffusing housing integrally formed as a single piece. ... Applied Materials Inc

07/05/18 / #20180185857

Spray bar design for uniform liquid flow distribution on a substrate

A spray manifold for a brush box is disclosed which includes an elongated body having a plurality of holes formed in a line along a direction parallel to a longitudinal axis of the body, a linear slot formed along a length of the body aligning with the line of the holes, a central bore formed along the length of the body and between each of the holes and the slot, and a cover disposed on the slot.. . ... Applied Materials Inc

06/28/18 / #20180182777

3d nand high aspect ratio structure etch

Embodiments of the present disclosure provide methods for forming features in a film stack. The film stack may be utilized to form stair-like structures with accurate profiles control in manufacturing three dimensional (3d) stacking of semiconductor chips. ... Applied Materials Inc

06/28/18 / #20180182664

Systems and methods for wetting substrates

Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. ... Applied Materials Inc

06/28/18 / #20180182660

Substrate transfer mechanisms

In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.. . ... Applied Materials Inc

06/28/18 / #20180182633

Systems and methods for anisotropic material breakthrough

Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. ... Applied Materials Inc

06/28/18 / #20180182599

Plasma reactor with non-power-absorbing dielectric gas shower plate assembly

A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as beryllium oxide.. ... Applied Materials Inc

06/21/18 / #20180174880

Rotatable electrostatic chuck having backside gas supply

Embodiments of a substrate support pedestal and an electrostatic chuck incorporating same are disclosed herein. In some embodiments, a substrate support pedestal includes: a body having an upper surface and a lower surface opposite the upper surface; one or more chucking electrodes disposed within the body; a plurality of substrate support elements protruding from the upper surface to support a substrate; a hole disposed in the lower surface at a center of and partially through the body; a plurality of gas holes disposed in the upper surface proximate the center of the body, wherein the plurality of gas holes is disposed above and fluidly coupled to the hole; and a plurality of gas distribution grooves formed in the upper surface and fluidly coupled to the plurality of gas holes.. ... Applied Materials Inc

06/21/18 / #20180174873

Apparatus and method for processing thin substrates

Processing methods and apparatus for thin substrates are disclosed. The methods and apparatus rotate a thin substrate without exposing the thin substrate to pressure gradients. ... Applied Materials Inc

06/21/18 / #20180174825

Integrated system and method for source/drain engineering

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise group iv source/drain growth in semiconductor devices. ... Applied Materials Inc

06/21/18 / #20180171502

Methods of electrochemical deposition for void-free gap fill

A method of electroplating on a workpiece having at least one sub-30 nm feature includes applying a first electrolyte chemistry to the workpiece, the chemistry including a metal cation solute species having a concentration in the range of about 50 mm to about 250 mm and a suppressor resulting in polarization greater than 0.75 v and reaching 0.75 v of polarization at a rate greater than 0.25 v/s, and applying an electric waveform, wherein the electric waveform includes a period of ramping up of current followed by a period of partial ramping down of current.. . ... Applied Materials Inc

06/21/18 / #20180171479

Materials and coatings for a showerhead in a processing system

Apparatus and systems are disclosed for providing a protective material for a showerhead of a processing system. In an embodiment, a processing system includes a processing chamber for processing substrates and a showerhead having a diffuser plate for distributing processing gases to the processing chamber. ... Applied Materials Inc

06/21/18 / #20180171476

Methods and apparatus for selective removal of self-assembled monolayers using laser annealing

Implementations described herein relate to selective removal processes. More specifically, laser thermal processing is utilized to selectively remove a self-assembled monolayer (sam) material from a portion of a substrate. ... Applied Materials Inc

06/21/18 / #20180171466

Carrier for supporting at least one substrate during a sputter deposition process, apparatus for sputter deposition on at least one substrate, and method for sputter deposition on at least one substrate

A carrier for supporting at least one substrate during a sputter deposition process is provided. The carrier includes a carrier body and an insulating portion provided at the carrier body. ... Applied Materials Inc

06/14/18 / #20180166616

Collimated oled light field display

The present disclosure generally relates to light field displays and methods of displaying images with light field arrays. In one example, the present disclosure relates to pixel arrangements for use in light field displays. ... Applied Materials Inc

06/14/18 / #20180166570

Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (finfet) device

The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material. ... Applied Materials Inc

06/14/18 / #20180166347

Substrate features for inductive monitoring of conductive trench depth

A substrate for use in fabrication of an integrated circuit has a layer with a plurality of conductive interconnects. The substrate includes a semiconductor body, a dielectric layer disposed over the semiconductor body, a plurality of conductive lines of a conductive material disposed in first trenches in the dielectric layer to provide the conductive interconnects, and a closed conductive loop structure of the conductive material disposed in second trenches in the dielectric layer. ... Applied Materials Inc

06/14/18 / #20180166316

Substrate carrier system with protective covering

Embodiments disclosed herein generally relate to a substrate carrier system suitable for clamping a substrate and optionally a mask, the substrate carrier system having a stack of removable protective layers. In one embodiment, substrate carrier system is provide that includes a substrate carrier body having a protective layer stack disposed an outer mounting surface of the substrate carrier body. ... Applied Materials Inc

06/14/18 / #20180166311

New repair method for electrostatic chuck

Implementations of the present disclosure relate to a method of refurbishing a sinter or plasma sprayed electrostatic chuck. Initially, a portion of a used electrostatic chuck body is removed to expose a base surface. ... Applied Materials Inc

06/14/18 / #20180166306

Quartz crystal microbalance utilization for foreline solids formation quantification

Embodiments of the present disclosure generally relate to abatement for semiconductor processing equipment. More particularly, embodiments of the present disclosure relate to techniques for foreline solids formation quantification. ... Applied Materials Inc

06/14/18 / #20180166288

Methods for silicide formation

The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. ... Applied Materials Inc

06/14/18 / #20180166260

Virtual sensor for chamber cleaning endpoint

Implementations of the present disclosure generally relate to methods for cleaning processing chambers. More specifically, implementations described herein relate to methods for determining processing chamber cleaning endpoints. ... Applied Materials Inc

06/14/18 / #20180166249

Creating ion energy distribution functions (iedf)

Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. ... Applied Materials Inc

06/14/18 / #20180164245

Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

The present disclosure relates to a method of depositing a polymer layer, including: providing a substrate, having a sensor structure disposed on the substrate, to a substrate support within a hot wire chemical vapor deposition (hwcvd) chamber; providing a process gas comprising an initiator gas and a monomer gas and a carrier gas to the hwcvd chamber; heating a plurality of filaments disposed in the hwcvd chamber to a first temperature sufficient to activate the initiator gas without decomposing the monomer gas; and exposing the substrate to initiator radicals from the activated initiator gas and to the monomer gas to deposit a polymer layer atop the sensor structure.. . ... Applied Materials Inc

06/14/18 / #20180163317

Uniform crack-free aluminum deposition by two step aluminum electroplating process

In one implementation, a method of depositing a material on a substrate is provided. The method comprises positioning an aluminum-containing substrate in an electroplating solution, the electroplating solution comprising a non-aqueous solvent and a deposition precursor. ... Applied Materials Inc

06/14/18 / #20180163307

Precursor control system and process

Implementations described herein generally relate to systems, methods and an apparatus used for delivery of chemical precursors, and more particularly to an ampoule for containing chemical precursors. Implementations described herein generally relate to systems, methods and an apparatus used for delivery of chemical precursors, and more particularly to an ampoule for containing chemical precursors. ... Applied Materials Inc

06/14/18 / #20180163306

Uhv in-situ cryo-cool chamber

A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.. ... Applied Materials Inc

06/14/18 / #20180161954

Cmp pad construction with composite material properties using additive manufacturing processes

Embodiments of the disclosure generally provide polishing pads includes a composite pad body and methods for forming the polishing pads. One embodiment provides a polishing pad including a composite pad body. ... Applied Materials Inc

06/14/18 / #20180161937

Method for removing transparent material using laser wavelength with low absorption characteristic

According to embodiments, a method of selectively ablating an optically transparent material covering a metal layer of a device may comprise: providing a layer of optically transparent material on a metal layer; and irradiating a portion of the layer of optically transparent material with a defocused or shaped laser beam and ablating the portion of the layer of optically transparent material; wherein the ablating leaves the metal layer completely intact and wherein the laser light has a wavelength within a range of 355 nm to 1070 nm and wherein the layer of optically transparent material absorbs less than or equal to 50% of the laser light from the laser beam on a single pass of the laser light through the layer of optically transparent material. Apparatus for laser ablation of a layer of transparent material on a metal layer, while leaving the metal layer completely intact are described.. ... Applied Materials Inc

06/07/18 / #20180160475

Consolidated filter arrangement for devices in an rf environment

. . A method includes generating, based on a process recipe, a first electrical control signal by a processing device external to a particular radio frequency (rf) environment. The method further includes converting the first electrical control signal into an alternative control signal, transmitting the alternative control signal to a converter within the particular rf environment over a non-conductive communication link, and converting the alternative control signal into a second electrical control signal by the converter. ... Applied Materials Inc

06/07/18 / #20180160474

Consolidated filter arrangement for devices in an rf environment

A heating system includes a first plurality of heating elements disposed within an electrostatic chuck and an electrically conductive housing. The heating system further includes one or more switching devices to control temperatures output by the first plurality of heating elements. ... Applied Materials Inc

06/07/18 / #20180158707

Rfid part authentication and tracking of processing components

Embodiments provided herein provide for methods and apparatus for detecting, authenticating, and tracking processing components including consumable components or non-consumable components used on substrate processing systems for electronic device manufacturing, such as semiconductor chip manufacturing. The semiconductor processing systems and/or its processing components herein include a remote communication device, such as a wireless communication apparatus, for example radio frequency identification (rfid) devices or other devices embedded in, disposed in, disposed on, located on, or otherwise coupled to one or more processing components or processing component assemblies and/or integrated within the semiconductor processing system itself. ... Applied Materials Inc

06/07/18 / #20180158686

Deposition of metal films

Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (pecvd) process at a plasma powers in the range of about 1 to less than about 700 mwatts/cm2 and frequencies in the range of about 10 khz to about 50 mhz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.. ... Applied Materials Inc

06/07/18 / #20180158682

Method to enhance growth rate for selective epitaxial growth

Embodiments of the present disclosure generally relate to methods for forming a doped silicon epitaxial layer on semiconductor devices at increased pressure and reduced temperature. In one embodiment, the method includes heating a substrate disposed within a processing chamber to a temperature of about 550 degrees celsius to about 800 degrees celsius, introducing into the processing chamber a silicon source comprising trichlorosilane (tcs), a phosphorus source, and a gas comprising a halogen, and depositing a silicon containing epitaxial layer comprising phosphorus on the substrate, the silicon containing epitaxial layer having a phosphorus concentration of about 1×1021 atoms per cubic centimeter or greater, wherein the silicon containing epitaxial layer is deposited at a chamber pressure of about 150 torr or greater.. ... Applied Materials Inc

06/07/18 / #20180158677

Growing graphene on substrates

Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. ... Applied Materials Inc

06/07/18 / #20180156727

Advanced in-situ particle detection system for semiconductor substrate processing systems

An fi having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the fi includes a fan, a substrate support, a particle detector, and an exhaust outlet. ... Applied Materials Inc

06/07/18 / #20180155838

Process kit design for in-chamber heater and wafer rotating mechanism

Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.. ... Applied Materials Inc

06/07/18 / #20180155835

Thin film encapsulation processing system and process kit

The present disclosure relates to methods and apparatus for a thin film encapsulation (tfe). In one embodiment a process kit for use in an atomic layer deposition (ald) chamber is disclosed and includes a dielectric window, a sealing frame, and a mask frame connected with the sealing frame, wherein the mask frame has a gas inlet channel and a gas outlet channel formed therein on opposing sides thereof.. ... Applied Materials Inc

06/07/18 / #20180155834

Integrated atomic layer deposition tool

Processing platforms having a central transfer station with a robot, a first batch processing chamber connected to a first side of the central transfer station and a first single wafer processing chamber connected to a second side of the central transfer station, where the first batch processing chamber configured to process x wafers at a time for a batch time and the first single wafer processing chamber configured to process a wafer for about 1/x of the batch time. Methods of using the processing platforms and processing a plurality of wafers are also described.. ... Applied Materials Inc

06/07/18 / #20180155827

Synthesis of metal nitride thin films materials using hydrazine derivatives

Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a hydrazine derivative to form a metal containing film are described.. . ... Applied Materials Inc

05/31/18 / #20180151424

Methods to fill high aspect ratio features on semiconductor substrates with mocvd cobalt film

. . In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.. ... Applied Materials Inc

05/31/18 / #20180151402

Ceramic electrostatic chuck having a v-shape seal band

Implementations described herein provide a substrate support assembly that includes a seal band. The seal band protects an adhesive layer that is disposed between an electrostatic chuck (esc) and a cooling plate of the substrate support assembly. ... Applied Materials Inc

05/31/18 / #20180151401

Substrate support assembly having a plasma resistant protective layer

A substrate support assembly comprises a ceramic body and a thermally conductive base bonded to a lower surface of the ceramic body. The substrate support assembly further comprises a protective layer covering an upper surface of the ceramic body, wherein the protective layer comprises at least one of yttrium aluminum garnet (yag) or a ceramic compound comprising y4al2o9 and a solid-solution of y2o3—zro2.. ... Applied Materials Inc

05/31/18 / #20180151337

Process kit and method for processing a substrate

Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. ... Applied Materials Inc

05/31/18 / #20180151325

Biased cover ring for a substrate processing system

Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.. ... Applied Materials Inc

05/31/18 / #20180150052

Spectrographic monitoring using a neural network

A method of processing a substrate includes subjecting a substrate to processing that modifies a thickness of an outer layer of the substrate, measuring a spectrum of light reflected from the substrate during processing, reducing the dimensionality of the measured spectrum to generate a plurality of component values, generating a characterizing value using an artificial neural network, and determining at least one of whether to halt processing of the substrate or an adjustment for a processing parameter based on the characterizing value. The artificial neural network has a plurality of input nodes to receive the plurality of component values, an output node to output the characterizing value, and a plurality of hidden nodes connecting the input nodes to the output node.. ... Applied Materials Inc

05/31/18 / #20180149547

Device for desorbing molecules from chamber walls

Embodiments include devices and methods for desorbing molecules from a chamber wall. In an embodiment, a desorption device includes several light emitting diodes (leds) mounted on a substrate having a wafer form factor. ... Applied Materials Inc

05/31/18 / #20180148840

Integration of dual remote plasmas sources for flowable cvd

Implementations described herein generally relate to an apparatus for forming flowable films. In one implementation, the apparatus is a processing chamber including a first rps coupled to a lid of the processing chamber and a second rps coupled to a side wall of the processing chamber. ... Applied Materials Inc

05/31/18 / #20180148833

Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition

In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (hwcvd) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.. . ... Applied Materials Inc

05/31/18 / #20180148832

Methods for depositing flowable carbon films using hot wire chemical vapor deposition

In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (hwcvd) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.. . ... Applied Materials Inc

05/24/18 / #20180145157

Plasma treatment on metal-oxide tft

Techniques are disclosed for methods of post-treating an etch stop or a passivation layer in a thin film transistor to increase the stability behavior of the thin film transistor.. . ... Applied Materials Inc

05/24/18 / #20180145034

Methods to selectively deposit corrosion-free metal contacts

Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.. ... Applied Materials Inc

05/24/18 / #20180144980

Deposition and treatment of films for patterning

Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.. ... Applied Materials Inc

05/24/18 / #20180144973

Electromigration improvement using tungsten for selective cobalt deposition on copper surfaces

Methods to selectively deposit capping layers on a copper surface relative to a dielectric surface comprising separately the copper surface to a cobalt precursor gas and a tungsten precursor gas, each in a separate processing chamber. The copper surface and the dielectric surfaces can be substantially coplanar. ... Applied Materials Inc

05/24/18 / #20180144969

Hybrid substrate carrier

Embodiments of a hybrid substrate carrier are provided herein. In some embodiments, a substrate carrier includes: a carrier ring having an inner ledge adjacent a central opening of the carrier ring; and a carrier plate having a diameter greater than central opening and configured to rest upon the inner ledge, wherein the carrier plate includes an electrode disposed beneath a support surface to electrostatically clamp a substrate to the support surface of the carrier plate.. ... Applied Materials Inc

05/24/18 / #20180144966

Exchange and flip chamber design for heterojunction solar cell formation

In one embodiment, a chamber is provided that includes a chamber body and a lid defining an interior volume, a frame within the interior volume, the frame sized to receive a plurality of substrates in a first orientation, and a rotational drive assembly coupled to the frame for rotating the frame and flipping each of the plurality of substrates to a second orientation that is different than the first orientation.. . ... Applied Materials Inc

05/24/18 / #20180144960

Next generation warpage measurement system

Systems, apparatuses and methods for determining a surface profile of a substrate are provided. In one embodiment, a method includes projecting a signal having a vertical component/profile across the surface of the substrate from a plurality of locations along a first side of the substrate, capturing the projected signals at each of a plurality of respective locations across the surface of the substrate and determining a surface profile for the substrate using the captured signals. ... Applied Materials Inc

05/24/18 / #20180144959

Electrostatic chucking force measurement tool for process chamber carriers

An electrostatic chucking force tool is described that may be used on workpiece carriers for micromechanical and semiconductor processing. One example includes a workpiece fitting to hold a workpiece when gripped by an electrostatic chucking force by an electrostatic chuck, an arm coupled to the workpiece fitting to pull the workpiece through the workpiece fitting laterally across the chuck, and a force gauge coupled to the arm to measure an amount of force with which the workpiece fitting is pulled by the arm in order to move the workpiece.. ... Applied Materials Inc

05/24/18 / #20180144954

Drying high aspect ratio features

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. ... Applied Materials Inc

05/24/18 / #20180144907

Thermal repeatability and in-situ showerhead temperature monitoring

Embodiments described herein generally related to a substrate processing apparatus, and more specifically to an improved showerhead assembly for a substrate processing apparatus. The showerhead assembly includes a gas distribution plate and one or more temperature detection assemblies. ... Applied Materials Inc

05/24/18 / #20180143537

Photonic activation of reactants for sub-micron feature formation using depleted beams

A fine feature formation method and apparatus provide photon induced deposition, etch and thermal or photon based treatment in an area of less than the diameter or cross section of a sted depleted laser beam. At least two sted depleted beams are directed to a reaction location on a substrate where a beam overlap region having an area smaller than the excitation portion of the beams is formed. ... Applied Materials Inc

05/24/18 / #20180142354

Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors

Embodiments of the present invention provide apparatus and methods for reducing non-uniformity and/or skews during substrate processing. One embodiment of the present invention provides a flow equalizer assembly for disposing between a vacuum port and a processing volume in a processing chamber. ... Applied Materials Inc

05/24/18 / #20180142352

Two zone flow cooling plate design with concentric or spiral channel for efficient gas distribution assembly cooling

An apparatus and method for cooling a gas distribution assembly with a cooling plate. The cooling plate having a body having a top surface, an outer perimeter, a center, an inner zone and an outer zone. ... Applied Materials Inc

05/24/18 / #20180142348

Selective deposition of aluminum oxide on metal surfaces

Processing methods for depositing aluminum etch stop layers comprise positioning a substrate within a processing chamber, wherein the substrate comprises a metal surface and a dielectric surface; exposing the substrate to an aluminum precursor gas comprising an isopropoxide based aluminum precursor to selectively form an aluminum oxide (alox) etch stop layer onto the metal surface while leaving exposed the dielectric surface during a chemical vapor deposition process. The metal surfaces may be copper, cobalt, or tungsten.. ... Applied Materials Inc

05/24/18 / #20180142343

Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition

In some embodiments, a method of processing a substrate disposed atop a substrate support in a physical vapor deposition process chamber includes: (a) forming a plasma from a process gas within a processing region of the physical vapor deposition chamber, wherein the process gas comprises an inert gas and a hydrogen-containing gas to sputter silicon from a surface of a target within the processing region of the physical vapor deposition chamber; and (b) depositing an amorphous silicon layer atop a first layer on the substrate, wherein adjusting the flow rate of the hydrogen containing gas tunes the optical properties of the deposited amorphous silicon layer.. . ... Applied Materials Inc

05/24/18 / #20180142342

Collimator for use in a physical vapor deposition chamber

Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.. ... Applied Materials Inc

05/24/18 / #20180142340

Process kit having a floating shadow ring

Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat transfer channel formed in the adapter body; a shadow ring coupled to the adapter such that the shield portion of the adapter extends over a portion of the shadow ring; and a ceramic insulator disposed between the shadow ring and the adapter to electrically isolate the shadow ring from the adapter.. ... Applied Materials Inc

05/17/18 / #20180138522

Laser ablation of wavelength transparent material with material modification

A method of fabricating electrochemical devices may comprise: providing a layer of dielectric material on a metal electrode; enhancing light absorption in the layer of dielectric material within the visible and near uv range, forming a layer of enhanced dielectric material; and laser ablating substantially all of the enhanced dielectric material in select areas of the layer using a laser with a wavelength in the visible and near uv range, wherein the laser ablating leaves the metal electrode substantially intact. In some embodiments, the layer may be provided engineered for higher laser light absorption within the visible and near ultraviolet range, without the need for enhancing. ... Applied Materials Inc

05/17/18 / #20180138408

A shadow mask for organic light emitting diode manufacture

A shadow mask (200) includes a frame (210) made of a metallic material, and one or more mask patterns (205) coupled to the frame (210), the one or more mask patterns (205) comprising a metallic material having a coefficient of thermal expansion less than or equal to about 14 microns/meter/degrees celsius and having a plurality of openings (215) formed therein, the metallic material having a thickness of about 5 microns to about 50 microns and having a pitch tolerance between openings (215) of about +/−3 microns across a length of about 160 millimeters.. . ... Applied Materials Inc

05/17/18 / #20180138085

Selective cobalt removal for bottom up gapfill

Exemplary methods for removing cobalt material may include flowing a chlorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the chlorine-containing precursor to produce plasma effluents. ... Applied Materials Inc

05/17/18 / #20180138075

Airgap formation with damage-free copper

Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. ... Applied Materials Inc

05/17/18 / #20180138068

Sealed substrate carriers and systems and methods for transporting substrates

An electronic device manufacturing system is disclosed. The system includes a processing tool having one or more processing chambers each adapted to perform an electronic device manufacturing process on one or more substrates; a substrate carrier adapted to couple to the system and carry one or more substrates; and a component adapted to create a sealed environment relative to at least a portion of the substrate carrier and to substantially equalize the sealed environment with an environment within the substrate carrier. ... Applied Materials Inc

05/17/18 / #20180138055

Removal methods for high aspect ratio structures

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. ... Applied Materials Inc

05/17/18 / #20180138049

Sin spacer profile patterning

Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon nitride surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. ... Applied Materials Inc

05/17/18 / #20180138038

Cleaning method

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. ... Applied Materials Inc

05/17/18 / #20180138032

Methods and solutions for cleaning ingaas (or iii-v) substrates

Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of group iii-v channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. ... Applied Materials Inc

05/17/18 / #20180138031

Process chamber having separate process gas and purge gas regions

Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. ... Applied Materials Inc

05/17/18 / #20180138023

Dynamic phased array plasma source for complete plasma coverage of a moving substrate

Apparatus and methods to process a substrate comprising a gas distribution assembly comprising a plasma process region with an array of individual plasma sources. A controller is connected to the array of individual plasma sources and the substrate support. ... Applied Materials Inc

05/17/18 / #20180138015

Processing chamber hardware fault detection using spectral radio frequency analysis

A method of assigning faults to a processing chamber is described. Some embodiments include applying a radio frequency (rf) signal to a processing chamber to stimulate resonance in the chamber, measuring resonances of the applied rf signal in the chamber, extracting a fingerprint from the measured resonances, comparing the extracted fingerprint to a library of fingerprints, assigning a similarity index to combinations of the extracted fingerprint with at least one fingerprint in the fingerprint library, comparing each similarity index to a threshold, and if the similarity is greater than a threshold, then assigning a fault to the processing chamber using the library fingerprint.. ... Applied Materials Inc

05/17/18 / #20180138014

Symmetrical plural-coil plasma source with side rf feeds and rf distribution plates

A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial rf feeds and cylindrical rf shielding around the symmetric and radial rf feeds. The radial rf feeds are symmetrically fed to the plasma source.. ... Applied Materials Inc

05/17/18 / #20180136569

Hybrid laser and implant treatment for overlay error correction

Embodiments disclosed herein relate to methods and systems for correcting overlay errors on a surface of a substrate. A processor performs a measurement process on a substrate to obtain an overlay error map. ... Applied Materials Inc

05/17/18 / #20180135183

Surface treatment for euv lithography

Processing methods comprising depositing an initial hardmask film on a substrate by physical vapor deposition and exposing the initial hardmask film to a treatment plasma comprising a silane compound to form the hardmask.. . ... Applied Materials Inc

05/17/18 / #20180135180

Apparatus for depositing a cobalt layer using a carousel batch deposition reactor

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body having a processing volume; a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled; a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.. ... Applied Materials Inc

05/17/18 / #20180135171

Hydrogen partial pressure control in a vacuum process chamber

Implementations described herein generally relate to methods for removing one or more processing by-products found in deposition systems, such as in vacuum forelines of vapor deposition systems. More specifically, implementations of the present disclosure relate to methods of reducing the buildup of hydrogen in systems. ... Applied Materials Inc

05/17/18 / #20180135160

Method for controlling a gas supply to a process chamber, controller for controlling a gas supply to a process chamber, and apparatus

A method for controlling a gas supply to a process chamber is provided. The method includes: measuring a gas parameter by each of two or more sensors provided in the process chamber; determining a combined gas parameter from the measured gas parameters; and controlling the gas supply to the process chamber based on the determined combined gas parameter.. ... Applied Materials Inc

05/17/18 / #20180134612

Ceramic component formed from ceramic portions bonded together with a halogen plasma resistant bonding agent

A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes form at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.. . ... Applied Materials Inc

05/17/18 / #20180133863

Chemical mechanical polishing retaining ring with integrated sensor

A retaining ring for a chemical mechanical polishing carrier head having a mounting surface for a substrate is provided herein. In some embodiments, the retaining ring may include an annular body have a central opening, a channel formed in the body, wherein a first end of the channel is proximate the central opening, and a sensor disposed within the channel and proximate the first end, wherein the sensor is configured to detect acoustic and/or vibration emissions from processes performed on the substrate.. ... Applied Materials Inc

05/10/18 / #20180131048

Thermography and thin film battery manufacturing

A method of fabricating thin film electrochemical devices may comprise: depositing on a substrate a stack of layers comprising a ccc, a cathode, an electrolyte, an anode and an acc; laser die patterning the stack to form die patterned stacks; laser patterning the die patterned stacks to reveal contact areas of at least one of the ccc layer and the acc layer for each of the die patterned stacks, the laser patterning the die patterned stacks forming device stacks; depositing a blanket encapsulation layer over the device stacks; laser patterning the blanket encapsulation layer to reveal contact areas of the acc layer and the ccc layer for each of the device stacks, the laser patterning of the blanket encapsulation layer forming encapsulated device stacks; and identifying hot spots by thermographic analysis of one or more of the device stacks and the encapsulated device stacks.. . ... Applied Materials Inc

05/10/18 / #20180130687

Electronic device manufacturing load port apparatus, systems, and methods

An electronic device manufacturing system includes a factory interface that has a load port. The load port may include a panel having a back surface. ... Applied Materials Inc

05/10/18 / #20180130686

Electronic device manufacturing load port apparatus, systems, and methods

An electronic device manufacturing system includes a factory interface that has a load port. The load port may include a panel having an opening therein and a carrier door opener that seals the opening when the door is closed. ... Applied Materials Inc

05/10/18 / #20180130685

Systems, apparatus, and methods for an improved load port

Embodiments provide systems, apparatus, and methods for an improved load port that includes a frame supporting a dock and a carrier opener; an elevator operable to raise and lower the carrier opener; an isolation compartment within which the elevator is operable to move, the isolation compartment including a volume isolated from a volume of an equipment front end module (efem); and a purge supply within the isolation compartment operable to purge the isolation compartment of reactive gas trapped within the isolation compartment. Numerous additional aspects are disclosed.. ... Applied Materials Inc

05/10/18 / #20180130684

Systems, apparatus, and methods for an improved load port backplane

Embodiments provide systems, apparatus, and methods for an improved load port that includes a backplane assembly supporting a docking tray and a substrate carrier opener, wherein the backplane assembly includes a backplane; a leveling block coupleable to an equipment front end module (efem); a conical hole adjustment assembly coupled between the leveling block and the backplane; and a slotted hole adjustment assembly coupled between the leveling block and the backplane. The conical hole adjustment assembly includes a conical hole block coupled to the leveling block at a first end; a threaded block coupled to the backplane; and an adjustment bolt coupled to the conical hole block and the threaded block. ... Applied Materials Inc

05/10/18 / #20180130671

Methods for self-aligned patterning

Processing methods comprising depositing a film on a substrate surface and in a surface feature with chemical planarization to remove the film from the substrate surface, leaving the film in the feature. A pillar is grown from the film so that the pillar grows orthogonally to the substrate surface.. ... Applied Materials Inc

05/10/18 / #20180130657

Geometric control of bottom-up pillars for patterning applications

Processing methods comprising selectively replacing a first pillar material with a second pillar material in a self-aligned process are described. The first pillar material may be grown orthogonally to the substrate surface and replaced with a second pillar material to leave a substantially similar shape and alignment as the first pillar material.. ... Applied Materials Inc

05/10/18 / #20180130653

Optics for controlling light transmitted through a conical quartz dome

Embodiments described herein generally relate to apparatus for heating substrates. The apparatus generally include a process chamber having a substrate support therein. ... Applied Materials Inc

05/10/18 / #20180130647

Method and apparatus for calibrating optical path degradation useful for decoupled plasma nitridation chambers

Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. ... Applied Materials Inc

05/10/18 / #20180130644

High conductance process kit

Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. ... Applied Materials Inc

05/10/18 / #20180130642

Methods and systems to modulate film stress

Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.. ... Applied Materials Inc

05/10/18 / #20180130637

Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber

Embodiments of the present invention relate to apparatus for enhancing deposition rate and improving a plasma profile during plasma processing of a substrate. According to embodiments, the apparatus includes a tuning electrode disposed in a substrate support pedestal and electrically coupled to a variable capacitor. ... Applied Materials Inc

05/10/18 / #20180129142

Apparatus and methods for on -the-fly digital exposure image data modification

Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. ... Applied Materials Inc

05/10/18 / #20180128744

Methods and apparatus for detection and analysis of nanoparticles from semiconductor chamber parts

Methods and apparatuses for identifying contaminants in a semiconductor cleaning solution, including: contacting a semiconductor cleaning solution with a semiconductor manufacturing component to form an effluent including one or more insoluble analytes-of-interest; contacting the effluent including one or more insoluble analytes-of-interest with an optical apparatus configured to sense fluorescence and, optionally, raman signals from the one or more insoluble analytes-of-interest, wherein the apparatus includes an electron multiplying charged couple device and a grating spectrometer to spectrally disperse the fluorescence and project the fluorescence on to the electron multiplying charged couple device; and identifying the one or more analytes of interest.. . ... Applied Materials Inc

05/10/18 / #20180128733

Methods and apparatus for detection and analysis of nanoparticles from semiconductor chamber parts

Methods and apparatuses for the analysis and detection of nanoparticles in a liquid from a semiconductor manufacturing component are provided herein. In some embodiments, a method of determining particle count, particle size, and zeta potential of nanoparticles in a substrate processing chamber component cleaning solution, includes (a) filling a sample cell with a cleaning solution from a substrate processing chamber component cleaning tank holding a semiconductor processing chamber component; (b) directing a light from a laser to the sample cell, wherein nanoparticles within the cleaning solution scatter the light from the laser; and (c) detecting the scattered light via one or more detectors proximate the sample cell to determine the zeta potential, the particle size and particle count of nanoparticles in the cleaning solution.. ... Applied Materials Inc

05/03/18 / #20180124960

Flexible equipment front end module interfaces, environmentally-controlled equipment front end modules, and assembly methods

An equipment front end module interface of an equipment front end module including environmental controls. The equipment front end module interface includes a first mounting member configured to couple to a load lock assembly, and a flexible seal coupled to the first mounting member. ... Applied Materials Inc

05/03/18 / #20180122945

Method of fabricating air-gap spacer for n7/n5 finfet and beyond

Embodiments disclosed herein relate to an improved transistor with reduced parasitic capacitance. In one embodiment, the transistor device includes a three-dimensional fin structure protruding from a surface of a substrate, the three-dimensional fin structure comprising a top surface and two opposing sidewalls, a first insulating layer formed on the two opposing sidewalls of the three-dimension fin structure, a sacrificial spacer layer conformally formed on the first insulating layer, wherein the sacrificial spacer layer comprises an aluminum oxide based material or a titanium nitride based material, and a second insulating layer conformally formed on the sacrificial spacer layer.. ... Applied Materials Inc

05/03/18 / #20180122696

Co or ni and cu integration for small and large features in integrated circuits

In one embodiment of the present disclosure, a microfeature workpiece includes at least two features of two different sizes disposed in a dielectric, wherein a width of a first feature is less than or equal to 17 nm and wherein the first feature is filled with cobalt or nickel, and wherein a width of a second feature is greater than 20 nm and wherein the second feature is filled with a stack layer of cobalt or nickel and copper.. . ... Applied Materials Inc

05/03/18 / #20180122679

Stress balanced electrostatic substrate carrier with contacts

A substrate carrier with contacts is described that is balanced for thermal stress. In one example workpiece carrier has a rigid substrate configured to support a workpiece to be carried for processing, a first dielectric layer over the substrate, an electrostatic conductive electrode over the first dielectric layer to electrostatically hold the workpiece to be carried, a second dielectric layer over the electrode to electrically isolate the workpiece from the electrode, and a third dielectric layer under the substrate to counter thermal stress applied to the substrate by the first and second dielectric layers.. ... Applied Materials Inc

05/03/18 / #20180122667

Core configuration with alternating posts for in-situ electromagnetic induction monitoring system

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core positioned at least partially in the platen and a coil wound around a portion of the core. ... Applied Materials Inc

05/03/18 / #20180122655

Endpoint gas line filter for substrate processing equipment

Methods and apparatus for delivering one or more gases to a process chamber are provided herein. In some embodiments a gas delivery system includes a process chamber having an inner volume; a gas source panel; a gas line coupling the inner volume to the gas source panel; and a first gas filter disposed along the gas line proximate the inner volume, wherein the first gas filter comprises a filter element body having a first end and a second end opposite the first end, and a filtration efficiency of about 1 to about 5 log reduction value (lrv).. ... Applied Materials Inc

05/03/18 / #20180122647

Remote hydrogen plasma titanium deposition to enhance selectivity and film uniformity

Methods and apparatus to selectively deposit metal films (e.g., titanium films) are described. One of the precursors is energized to form ions and radicals of the precursor. ... Applied Materials Inc

05/03/18 / #20180122630

High-pressure annealing and reducing wet etch rates

Methods are described for reducing the wet etch rate of dielectric films formed on a patterned substrate by flowing the material into gaps during deposition. Films deposited in this manner may initially exhibit elevated wet etch rates. ... Applied Materials Inc

05/03/18 / #20180119285

Thin film encapsulation mask preheat and substrate buffer chamber

Embodiments described herein relate to a thermal chamber utilized in the processing of display substrates. The thermal chamber may be part of a larger processing system configured to manufacture oled devices. ... Applied Materials Inc

05/03/18 / #20180119281

Anti-arc zero field plate

Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. ... Applied Materials Inc

05/03/18 / #20180119272

Physical vapor deposition system with a source of isotropic ion velocity distribution at the wafer surface

In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. ... Applied Materials Inc

05/03/18 / #20180117771

Wafer swapper

The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.. ... Applied Materials Inc

04/19/18 / #20180108831

Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions

A process sequence is provided to provide an ultra-smooth (0.2 nm or less) bottom electrode surface for depositing magnetic tunnel junctions thereon. In one embodiment, the sequence includes forming a bottom electrode pad through bulk layer deposition followed by patterning and etching. ... Applied Materials Inc

04/19/18 / #20180108562

Protective cover for electrostatic chuck

In embodiments, manufacturing a protective cover for an electrostatic chuck comprises coating a top surface and side walls of a conductive wafer with a plasma resistant ceramic, masking an inner region of a bottom surface of the conductive wafer, coating inner region of the bottom surface with the plasma resistant ceramic, and grinding the inner region of the bottom surface to a flatness of less than approximately 300 microns. In embodiments, a protective cover is manufactured by a process comprising applying a mask to an outer perimeter of a bottom surface of a plasma resistant ceramic wafer, coating the bottom surface of the plasma resistant ceramic wafer with an electrically conductive layer, and removing the mask, wherein an inner region of the bottom surface of the plasma resistant ceramic wafer is coated with the conductive layer.. ... Applied Materials Inc

04/19/18 / #20180108519

Power delivery for high power impulse magnetron sputtering (hipims)

A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.. ... Applied Materials Inc

04/19/18 / #20180108517

Coating architecture for plasma sprayed chamber components

A method of plasma spraying an article comprises inserting the article into a vacuum chamber for a low pressure plasma spraying system. A low pressure plasma spray process is then performed by the low pressure plasma spraying system to form a first plasma resistant layer having a thickness of 20-500 microns and a porosity of over 1%. ... Applied Materials Inc

04/19/18 / #20180107119

Apparatus for post exposure bake

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. ... Applied Materials Inc

04/19/18 / #20180107117

Resist sensitivity and profile improvement via acid anion control during field-guided post exposure bake

Methods disclosed herein provide apparatus and methods for applying an electric field and/or a magnetic field to a photoresist layer without air gap intervention during photolithography processes. In one embodiment, an apparatus includes a processing chamber configured to apply an electric field to a substrate via a non-gas phase intermediate medium. ... Applied Materials Inc

04/19/18 / #20180105938

High purity metallic top coat for semiconductor manufacturing components

A component for a manufacturing chamber comprises a coating and an anodization layer on the coating. The anodization layer has a thickness of about 2-10 mil. ... Applied Materials Inc

04/19/18 / #20180105932

Atomic layer deposition of protective coatings for semiconductor process chamber components

A multi-component coating composition for a surface of a chamber component comprising at least one first film layer of a yttrium oxide coated onto the surface of the chamber component using an atomic layer deposition process and at least one second film layer of zirconium oxide coated onto the surface of the chamber component using an atomic layer deposition process, wherein the multi-component coating comprises yzrxoy.. . ... Applied Materials Inc

04/19/18 / #20180105922

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of y2o3, over 0 mol % to 60 mol % of zro2, and 0 mol % to 9 mol % of al2o3.. ... Applied Materials Inc

04/19/18 / #20180105701

Chemical conversion of yttria into yttrium fluoride and yttrium oxyfluoride to develop pre-seasoned corossion resistive coating for plasma components

Embodiments of the disclosure provide a chamber component for use in a plasma processing chamber apparatus. The chamber component may include a coating layer that provides a fluorine-rich surface. ... Applied Materials Inc

04/19/18 / #20180104767

Texturizing a surface without bead blast

A method of providing a texture to a surface of a component for use in a semiconductor processing chamber is provided. The method includes directing a beam of photons at the surface of the component and scanning the beam of photons across a first region of the surface of the component to form a plurality of features on the surface within the first region. ... Applied Materials Inc

04/12/18 / #20180103508

Substrate support assembly

A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material. ... Applied Materials Inc

04/12/18 / #20180102526

Battery separator with dielectric coating

Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same. In one implementation, a separator for a battery is provided. ... Applied Materials Inc

04/12/18 / #20180102275

Protective cover for electrostatic chuck

A protective cover for an electrostatic chuck may include a conductive wafer and a plasma resistant ceramic layer on at least one surface of the conductive wafer. The plasma resistant ceramic layer covers a top surface of the conductive wafer, side walls of the conductive wafer and an outer perimeter of a bottom surface of the conductive wafer. ... Applied Materials Inc








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