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Cabot Microelectronics Corporation patents


Recent patent applications related to Cabot Microelectronics Corporation. Cabot Microelectronics Corporation is listed as an Agent/Assignee. Note: Cabot Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with Cabot Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Cabot Microelectronics Corporation-related inventors


Composition and method for polishing silicon carbide

The invention provides a chemical-mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a ph of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. ... Cabot Microelectronics Corporation

Composition and method for removing residue from chemical-mechanical planarization substrate

Described is a post-cmp cleaning solution and methods useful to remove residue from a cmp substrate or to prevent formation of residue on a surface of a cmp substrate.. . ... Cabot Microelectronics Corporation

Coated compressive subpad for chemical mechanical polishing

Coated compressive subpads for polishing pad stacks and methods of fabricating coated compressive subpads for polishing pad stacks are described. In an example, a polishing pad stack for polishing a substrate includes a polishing pad having a polishing surface and a back surface. ... Cabot Microelectronics Corporation

Diamond-based slurries with improved sapphire removal rate and surface roughness

. . The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a sapphire substrate. The composition contains a diamond abrasive and a ph adjuster. ... Cabot Microelectronics Corporation

Alternative oxidizing agents for cobalt cmp

The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a ph of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. ... Cabot Microelectronics Corporation

Polishing composition comprising an amine-containing surfactant

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 daltons to about 5000 daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a ph of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. ... Cabot Microelectronics Corporation

Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low ph.. . ... Cabot Microelectronics Corporation

Cobalt polishing accelerators

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: nr1r2r3 wherein r1, r2, and r3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of r1, r2, and r3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; n-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; n-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a ph of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. ... Cabot Microelectronics Corporation

Method of polishing group iii-v materials

Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one group iii-v material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the group iii-v material in an amount of from about 0.01 wt. ... Cabot Microelectronics Corporation

Polishing composition comprising cationic polymer additive

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a ph of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. ... Cabot Microelectronics Corporation

Method of polishing a low-k substrate

Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing a low-k dielectric composition, which includes less than about 80% by weight of carbon, with a polishing pad and a chemical-mechanical polishing composition comprising water and abrasive particles having a positive surface charge, wherein the polishing composition has a ph of from about 3 to about 6; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. ... Cabot Microelectronics Corporation

Tungsten processing slurry with catalyst

Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. Polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.. ... Cabot Microelectronics Corporation

Cmp processing composition comprising alkylamine and cyclodextrin

Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.. . ... Cabot Microelectronics Corporation

Stabilization of tris(2 hydroxyethyl)methylammonium hydroxide against decomposition with dialkyhydroxylamine

The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2-hydroxy ethyl)methylammonium hydroxide (themah) and/or carbohydrazide (chz).. ... Cabot Microelectronics Corporation

06/08/17 / #20170158992

Cleaning composition following cmp and methods related thereto

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. ... Cabot Microelectronics Corporation

05/04/17 / #20170121561

Tungsten-processing slurry with cationic surfactant

Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.. . ... Cabot Microelectronics Corporation

05/04/17 / #20170121560

Tungsten-processing slurry with cationic surfactant and cyclodextrin

Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.. . ... Cabot Microelectronics Corporation

05/04/17 / #20170120417

Polishing pad with foundation layer and window attached thereto

Polishing pads having a foundation layer and a window attached to the foundation layer, and methods of fabricating such polishing pads, are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a first modulus. ... Cabot Microelectronics Corporation

03/30/17 / #20170087688

Polyurethane cmp pads having a high modulus ratio

A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees c. ... Cabot Microelectronics Corporation

03/09/17 / #20170066944

Methods and compositions for processing dielectric substrate

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., cmp processing.. . ... Cabot Microelectronics Corporation

03/09/17 / #20170066102

Selective nitride slurries with improved stability and improved polishing characteristics

The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. ... Cabot Microelectronics Corporation

02/23/17 / #20170051181

Polishing composition and method utilizing abrasive particles treated with an aminosilane

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.. . ... Cabot Microelectronics Corporation

02/16/17 / #20170044403

Polishing composition containing ceria abrasive

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. ... Cabot Microelectronics Corporation

02/09/17 / #20170037278

Slurry composition and method for polishing substrate

Provided are a slurry composition to be used in chemical mechanical polishing (cmp), and a method for polishing a substrate. This slurry composition contains water, abrasive grains, and an alkylene polyalkylene oxide amine polymer having a solubility parameter in a range of 9-10. ... Cabot Microelectronics Corporation

02/09/17 / #20170036320

Cmp polishing pad with columnar structure and methods related thereto

The invention provides a polishing pad for chemical-mechanical polishing. The polishing pad has a substrate with two opposing surfaces and a plurality of columns projecting from at least one of the surfaces of the substrate in spaced relation to each other. ... Cabot Microelectronics Corporation

01/19/17 / #20170014969

Methods and compositions for processing dielectric substrate

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., cmp processing.. . ... Cabot Microelectronics Corporation








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