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Canon Anelva Corporation patents

Recent patent applications related to Canon Anelva Corporation. Canon Anelva Corporation is listed as an Agent/Assignee. Note: Canon Anelva Corporation may have other listings under different names/spellings. We're not affiliated with Canon Anelva Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Canon Anelva Corporation-related inventors

X-ray generating device and x-ray photography system

An x-ray generating device includes an x-ray tube, an x-ray tube drive circuit, an electron acceleration voltage generation circuit, and a control unit communicating with the drive circuit and the voltage generation circuit, the x-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil, a path connecting the drive circuit and the control unit includes an optical fiber cable arranged inside the storage container, the optical fiber cable has a coating that suppresses fluctuation due to a convective flow of the insulating oil, the coating is cured by, from a resin material containing a plasticizer, a part of the plasticizer being leaching out, and the control unit is configured to facilitate leaching of the plasticizer by driving the voltage generation circuit to apply a voltage to the optical fiber cable in a state of no x-ray being generated.. . ... Canon Anelva Corporation

Heating apparatus, substrate heating apparatus, and method of manufacturing semiconductor device

A heating apparatus includes a heater, an electron reflection plate, a filament arranged between the heater and the electron reflection plate, a heating power supply configured to supply an ac voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament, an acceleration power supply configured to supply an acceleration voltage between the filament and the heater, and a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply.. . ... Canon Anelva Corporation

Vacuum arc deposition apparatus and deposition method

A vacuum arc deposition apparatus for forming a ta-c film on a substrate using arc discharge includes a holding unit that holds a target unit, an anode unit into which electrons emitted from the target unit flow, and a power supply that supplies, between the target unit and the anode unit, a current for generating a plasma by arc discharge. The current supplied by the power supply at the time of the arc discharge is generated by superimposing, on a dc current, a pulse current of a pulse frequency not higher than 140 hz.. ... Canon Anelva Corporation

Epitaxial film forming method, sputtering apparatus, manufacturing method of semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group iii nitride semiconductor thin film on an α-al2o3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group iii nitride semiconductor thin film is to be formed on the α-al2o3 substrate arranged on a substrate holder provided with a heater electrode and a bias electrode of a sputtering apparatus, in a state where the α-al2o3 substrate is maintained at a predetermined temperature by the heater electrode, high-frequency power is applied to a target electrode and high-frequency bias power is applied to a bias electrode and at that time, the powers are applied so that frequency interference between the high-frequency power and the high-frequency bias power does not occur.. ... Canon Anelva Corporation

Method of manufacturing magnetoresistive element

Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one of the two magnetic layers, a layer to form the tunnel barrier layer, and the other of the two magnetic layers, on a substrate; forming multiple separated stacked films on the substrate by separating the stacked film into the multiple stacked films by etching; irradiating side portions of the multiple separated stacked films with ion beams in a pressure-reducible process chamber; and after the irradiation with the ion beams, forming oxide layers or nitride layers on surfaces of the multiple stacked films by introducing an oxidizing gas or a nitriding gas into the process chamber.. ... Canon Anelva Corporation

Deposition apparatus

A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on the substrate passing through the deposition area by supplying a deposition material to the deposition area, and a cooling unit configured to cool the holding unit.. . ... Canon Anelva Corporation

Deposition apparatus

A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to the target, an anode to which a positive potential is applied, and a capture for capturing droplets from the target. ... Canon Anelva Corporation

Sputtering apparatus and processing apparatus

A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. ... Canon Anelva Corporation

Manufacturing apparatus

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.. ... Canon Anelva Corporation

Ion beam etching method and ion beam etching apparatus

To provide an ion beam etching method which enables a highly uniform ibe process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.. ... Canon Anelva Corporation

Grid, method of manufacturing the same, and ion beam processing apparatus

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the carbon fibers.. ... Canon Anelva Corporation

Heat treatment method and heat treatment apparatus for semiconductor substrate

A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein in a treatment chamber where gas is sealed at a pressure exceeding a pressure in a molecular flow region.. ... Canon Anelva Corporation

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Canon Anelva Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Canon Anelva Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by