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Crossbar Inc patents

Recent patent applications related to Crossbar Inc. Crossbar Inc is listed as an Agent/Assignee. Note: Crossbar Inc may have other listings under different names/spellings. We're not affiliated with Crossbar Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar Inc-related inventors

Node retainer circuit incorporating rram

A retainer node circuit is provided that can retain state information of a volatile circuit element (e.g., a flip-flop, latch, switch, register, etc.) of an electronic device for planned or unplanned power-down events. The retainer node circuit can include a resistive-switching memory cell that is nonvolatile, having very fast read and write performance. ... Crossbar Inc

Resistive memory cell with intrinsic current control

Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. ... Crossbar Inc

Liner layer for dielectric block layer

Two-terminal memory devices can be formed in part within a dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of metal particles employed in integrated circuit fabrication. This dielectric material can be protected from other fabrication processes corrosive to the dielectric material (e.g., cmp, hf clean, etc) by a silicon containing liner. ... Crossbar Inc

Non-volatile resistive memory configuration cell for field programmable gate array

Providing for a configuration cells for junction nodes of a field programmable gate array (fpga) is described herein. By way of example, a configuration cell can comprise non-volatile resistive switching memory to facilitate programmable storage of data as an input to a control circuit of a junction node. ... Crossbar Inc

Using aluminum as etch stop layer

A two-terminal resistive switching device (ttrsd) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer comprising aluminum and can include forming a buffer layer below the etch stop layer and/or between the etch stop layer and a top electrode of the ttrsd.. ... Crossbar Inc

Sensing a non-volatile memory device utilizing selector device holding characteristics

Providing for improved sensing of non-volatile resistive memory to achieve higher sensing margins, is described herein. The sensing can leverage current-voltage characteristics of a volatile selector device within the resistive memory. ... Crossbar Inc

Systems and methods for automated extraction of closed captions in real time or near real-time and tagging of streaming data for advertisements

System and methods for finding and analyzing target content from audio and video content sources, including means and methods for extracting captions from audio and video content sources; searching the captions for a mention of at least one target; extracting audio and video segments relating to the at least one target; delivering extracted audio and video segments to a user device; harvesting social media data relevant to the target content; analyzing the search results in correlation with the social media data for target content.. . ... Crossbar Inc

Device switching using layered device structure

A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. ... Crossbar Inc

Regulating interface layer formation for two-terminal memory

Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. ... Crossbar Inc

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Crossbar Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by