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D2s Inc patents (2015 archive)


Recent patent applications related to D2s Inc. D2s Inc is listed as an Agent/Assignee. Note: D2s Inc may have other listings under different names/spellings. We're not affiliated with D2s Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "D" | D2s Inc-related inventors


11/26/15 / #20150338737

Method and system for design of enhanced edge slope patterns for charged particle beam lithography

A method and system for fracturing or mask data preparation are presented in which overlapping shots are generated to increase dosage in selected portions of a pattern, thus improving the fidelity and/or the critical dimension variation of the transferred pattern. In various embodiments, the improvements may affect the ends of paths or lines, or square or nearly-square patterns. ... D2s Inc

11/19/15 / #20150331991

Method and system for forming patterns using charged particle beam lithography with variable pattern dosage

A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.. ... D2s Inc

09/17/15 / #20150261907

Method and system for forming patterns with charged particle beam lithography

In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. ... D2s Inc

09/10/15 / #20150254393

Method and system for forming a pattern on a surface using multi-beam charged particle lithography

A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface.. ... D2s Inc

04/16/15 / #20150106772

Method for fracturing and forming a pattern using shaped beam charged particle beam lithography

In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. ... D2s Inc

04/16/15 / #20150104737

Method and system for forming non-manhattan patterns using variable shaped beam lithography

A method and system for fracturing or mask data preparation or proximity effect correction is disclosed in which a series of charged particle beam shots is determined, where the series of shots is capable of forming a continuous non-manhattan track on a surface, such that the non-manhattan track has a line width roughness (lwr) which nearly equals a target lwr. A method and system for fracturing or mask data preparation or proximity effect correction is also disclosed in which at least two series of shots are determined, where each series of shots is capable of forming a continuous non-manhattan track on a surface, and where the space between tracks has space width roughness (swr) which nearly equals a target swr.. ... D2s Inc

03/19/15 / #20150082258

Method for forming circular patterns on a surface

A method for fracturing or mask data preparation is disclosed, in which a set of shots is determined, where each shot will direct a circular or nearly-circular dosage pattern to a surface, where each shot comprises a shot dosage, and in which the set of shots is output. A method for forming patterns on a surface using charged particle beam lithography is also disclosed, in which a stencil is provided comprising one or more circular apertures, and where a plurality of circular patterns of different sizes are formed on the surface using a single aperture, by varying the shot dosage.. ... D2s Inc

01/15/15 / #20150020037

Method and system for design of a reticle to be manufactured using variable shaped beam lithography

A method for optical proximity correction (opc) is disclosed, in which a set of vsb shots is determined, where the set of shots can approximately form a target reticle pattern that is an opc-compensated version of an input pattern. The set of shots is simulated to create a simulated reticle pattern. ... D2s Inc








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