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D2s Inc patents (2016 archive)


Recent patent applications related to D2s Inc. D2s Inc is listed as an Agent/Assignee. Note: D2s Inc may have other listings under different names/spellings. We're not affiliated with D2s Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "D" | D2s Inc-related inventors


Method and system for forming patterns using charged particle beam lithography

A method for mask data preparation (mdp) is disclosed, in which a set of shots is determined that will form a pattern on a reticle, where the determination includes calculating the pattern that will be formed on a substrate using an optical lithographic process with a reticle formed using the set of shots. A method for optical proximity correction (opc) or mdp is also disclosed, in which a preliminary set of charged particle beam shots is generated using a preliminary mask model, and then the shots are modified by calculating both a reticle pattern using a final mask model, and a resulting substrate pattern. ... D2s Inc

Method and system for forming patterns using charged particle beam lithography with variable pattern dosage

A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.. ... D2s Inc

Method and system for dimensional uniformity using charged particle beam lithography

A method for mask process correction or forming a pattern on a reticle using charged particle beam lithography is disclosed, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern, and where pattern exposure information is modified to increase edge slope of the reticle pattern where sensitivity of the wafer pattern is high. A method for fracturing or mask data preparation is also disclosed, where pattern exposure information is determined that can form a pattern on a reticle using charged particle beam lithography, where the reticle is to be used in an optical lithographic process to form a pattern on a wafer, and where sensitivity of the wafer pattern is calculated with respect to changes in dimension of the reticle pattern.. ... D2s Inc

Method and system for forming a pattern on a reticle using charged particle beam lithography

A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate pattern on the substrate using an optical lithography process, wherein the substrate pattern is within a predetermined tolerance of the desired substrate pattern. ... D2s Inc

Method and system for design of enhanced edge slope patterns for charged particle beam lithography

A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. ... D2s Inc

Lithography mask functional optimization and spatial frequency analysis

In an electronic design automation technique for optical proximity correction, a mask is represented by a function with an exact analytical form over a mask region. Using the physics of optical projection, a solution based on a spatial frequency analysis is determined. ... D2s Inc








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