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D3 Semiconductor Llc patents


Recent patent applications related to D3 Semiconductor Llc. D3 Semiconductor Llc is listed as an Agent/Assignee. Note: D3 Semiconductor Llc may have other listings under different names/spellings. We're not affiliated with D3 Semiconductor Llc, we're just tracking patents.

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Source-gate region architecture in a vertical power semiconductor device

A vertical drift metal-oxide-semiconductor (vdmos) transistor with improved contact to source and body regions, and a method of fabricating the same. A masked ion implant of the source regions into opposite-type body regions defines the locations of body contact regions, which are implanted subsequently with a blanket implant. ... D3 Semiconductor Llc

Surface devices within a vertical power device

A semiconductor device comprises a vertical power device, such as a superjunction mosfet, an igbt, a diode, and the like, and a surface device that comprises one or more lateral devices that are electrically active along a top surface of the semiconductor device.. . ... D3 Semiconductor Llc

Device architecture and method for precision enhancement of vertical semiconductor devices

Improvement of key electrical specifications of vertical semiconductor devices, usually found in the class of devices known as discrete semiconductors, has a direct impact on the performance achievement and power efficiency of the systems in which these devices are used. Imprecise vertical device specifications cause system builders to either screen incoming devices for their required specification targets or to design their system with lower performance or lower efficiency than desired. ... D3 Semiconductor Llc

Termination region architecture for vertical power transistors

A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (mosfet), in which termination structures in the corners of the integrated circuit are stretched to efficiently shape the lateral electric field. Termination structures in the device include such features as doped regions, field plates, insulator films, and high-voltage conductive regions and elements at the applied substrate voltage. ... D3 Semiconductor Llc

Source-gate region architecture in a vertical power semiconductor device

A vertical drift metal-oxide-semiconductor (vdmos) transistor with improved contact to source and body regions, and a method of fabricating the same. A masked ion implant of the source regions into opposite-type body regions defines the locations of body contact regions, which are implanted subsequently with a blanket implant. ... D3 Semiconductor Llc

Device architecture and method for improved packing of vertical field effect devices

A semiconductor field-effect device is disclosed that utilizes an octagonal or inverse-octagonal deep trench super-junction in combination with an octagonal or inverse-octagonal gate trench. The field-effect device achieves improved packing density, improved current density, and improved on resistance, while at the same time maintaining compatibility with the multiple-of-45°-angles of native photomask processing and having well characterized (010), (100) and (110) (and their equivalent) silicon sidewall surfaces for selective epitaxial refill and gate oxidation, resulting in improved scalability. ... D3 Semiconductor Llc








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